CN1092404C - 制造发光效率增加了的发光二极管的方法 - Google Patents

制造发光效率增加了的发光二极管的方法 Download PDF

Info

Publication number
CN1092404C
CN1092404C CN95196058A CN95196058A CN1092404C CN 1092404 C CN1092404 C CN 1092404C CN 95196058 A CN95196058 A CN 95196058A CN 95196058 A CN95196058 A CN 95196058A CN 1092404 C CN1092404 C CN 1092404C
Authority
CN
China
Prior art keywords
wafer
laser
carborundum
light
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN95196058A
Other languages
English (en)
Other versions
CN1163014A (zh
Inventor
哥拉德·H·尼格雷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc filed Critical Cree Research Inc
Publication of CN1163014A publication Critical patent/CN1163014A/zh
Application granted granted Critical
Publication of CN1092404C publication Critical patent/CN1092404C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Abstract

公开了一种由碳化硅制造发光效率增加了的发光二极管的方法，该方法包括在碳化硅一部分的一个方向上导向一激光束，和激光足以使得它撞击的碳化硅汽化，籍此形成碳化硅部分的切割线；然后，干法刻蚀碳化硅部分以除去激光切割碳化硅部分时产生的副产品。也公开了由此得到的晶片和二极管的结构。

Description

制造发光效率增加了的发光二极管的方法
本发明涉及发光二极管的制造方法，更具体地说，涉及一种利用激光切割碳化硅衬底晶片上由碳化硅和氮化镓制成的各个二极管的一种方法。
术语“激光”是“受激发射光放大”的缩写。激光在可见光谱或其它电磁光谱部分产生相干单色光束。由于具有单一的波长和频率，激光束具有极高的能量。由于能量高，在很多工业应用中，激光束用于难加工材料的切割或者可能或必须按严格控制的图案切割或划线的物体。
由于半导体器件的生产需要在很小的范围内有相对准确的容差和图案，因此在生产过程中已尝试用激光对半导体材料形成图案，切割，或别的方式处理。然而，至今为止这种努力取得成果很小。主要问题有两个：第一，激光的能量损坏制造中的器件。第二，激光和被处理的材料尤其是被切割的材料之间的反应会产生副产品，这些副产品留在被制造结构的表面，以后必须除去这些副产品。假如没有可用的或满足要求的除去技术，这些副产品就会使由此形成的器件性能下降或甚至损坏。
发光二极管是一种在p-n结上加电势差时发射包括可见光的半导体器件。有多种方法制造发光二极管和一些关联的结构，但这些已是众所周知的，在此所要描述的发明适用于其中的大部分或全部。因此，以后这些方法除非必需用于解释本发明外将不会加以详细讨论。作为例子，Sze的<半导体器件物理>第二版(1981)第12-14章完整地解释了各种光量子器件，包括LED。
然而熟悉半导体材料和由这些材料制成的器件的人都知道，发光二极管能产生的光的颜色通常是由半导体材料的性质，最主要是由带隙决定的。带隙表示了各个原子价带和导带之间的能量跃迁。根据量子力学原理，价带和导带之间的跃迁受限于精确的带隙或受限于与同样是表征材料以及其掺杂剂和杂质特性的带隙有关的确定的中间态。简言之，材料的带隙限制了基于带隙跃迁所发射的光的颜色。
熟悉半导体材料、光以及它们之间相互作用的人都知道，跃迁发射光子的能量与它的频率有关，E＝hυ，这里“E”是光子能量，“h”是普朗克常数，“υ”是频率。这样，通常以电子伏特“eV”表示的带隙能量宽度把它能产生的光子限制在一定的能量从而把光子限制在一定的频率。
其次，光子的频率和波长成反比关系，λ＝c/υ，这里“c”是光速，“λ”是产生的波长。
由于这些限制，带隙小的材料只能产生波长长，频率低的光子，这些光子在可见光谱的红(770-622nm)、橙(622-597nm)、黄(597-577nm)波段。波长大约在525纳米的光具有更纯的绿色，因此要产生这种光子，半导体材料的带隙要在2.36eV左右。类似，发射较纯蓝色光的波长在470纳米量级，这样需要带隙为2.64eV或更大的半导体材料。当然，给特定的颜色或颜色的边界指定特定的波长在某种程度上是任意的，应该把这看成是一种说明性的而不能看成是绝对的。
仅有少数半导体材料具有合适的带隙能产生这种光。两种可选的材料是碳化硅(α-SiC的带隙是2.86eV)和氮化镓(3.36eV)。
人们对碳化硅的理论特性的认识已经有一些年月，但只是在最近十年体晶生长、外延生长、器件制造等技术有了长足的发展的情况下才由碳化硅生产出能工作的器件，这些发展大部分是由本发明的共同受让人提出的。碳化硅有极高的熔点(大约2830℃)，物理硬度极大(通常用作研磨剂)，具有超过150种晶体形状，它们中的大部分是由相对很小的热力学差别来划分的。
氮化镓以及和它相关的第三族氮化物(即元素周期表中的第三族)是其它可选材料，但是，直到今天还没有找到令人满意的能用作适当器件衬底的氮化镓或其它第三族氮化物的大体积单晶的生长方法。因此，氮化镓器件一般是在蓝宝石(Al2O3)上制成，而最近在碳化硅上制成。
迄今为止制造发射蓝光谱区光的LED的最成功的努力是使用“台式”(mesa)结构。“台式”一词通常指器件的衬底横截面积比有源区面积大的结构，该有源区一般在衬底上由两个或多个外延层形成。当在单个晶片上制作多个器件时，常规的台式结构在有源区之间提供了物理隔离，这是目前批量生产这种器件的最常用的方法。台阶之间的间距提供了器件之间机械隔离的空间。一般地，使用一些能工作在这样硬材料上的工具完成机械隔离，例如，钻石锯或最近提出的共同未决的转让申请序列号为08/290,458放电机器(“EDM”)，该申请于1994年8月15日提出。一般说，EDM用于把大体积单晶分割成衬底晶片，钻石锯用于从晶片切割已形成于晶片上的各个芯片。
然而，在某种环境下，台式结构限制了制造工艺和成品器件的效率。由于倾向于需要相当大的晶片面积百分比来形成各个台阶之间的隔离，台式结构降低了制造效率。这样，在能减少台阶隔离面积的条件下，相应地有源器件结构所占的晶片面积百分比就会增加。然而迄今为止，钻石锯在能减少台阶隔离面积方面仍存在限制因素。
钻石锯切割也易于在各个LED芯片上产生相当的表面光洁度，这些光滑表面易于激励LED内部光的反射而不是光的外部发射。从这一方面考虑，熟悉器件的人都明白，光是从器件的结发射的，为了能成为可见光，它必须传到和离开器件的边缘。这样，由于光在内部反射，减少了所得到的器件的外部量子效应。
共同未决的共同转让申请序列号08/081,688提出一种增加发光效率的技术，该申请于1993年6月23日提出，它描述了一种利用光学方法增加这种二极管发光效率的扩展外延层。
然而，当试图使用激光切割碳化硅或氮化镓等材料时发现激光反应产生预期的和料想不到的问题。预期的问题包括不希望的副产品和对器件形成的损坏。料想不到的问题来自碳化硅所特有的缺点。具体地说，在其它的材料中，对于器件，尤其是对于其晶体结构的损坏能改变该材料产生的色强，但并不改变颜色本身。相反，若在碳化硅上产生一定类型的损伤，尤其是点缺陷，它们将易于形成复合中心，这些复合中心把二极管发射的可见光从蓝色变成绿色。这样，尽管希望以可控方式能产生碳化硅的绿色LED(例如见共同未决申请序列号08/290020，该申请于1994年8月12日提交)，但当希望发射蓝光的LED时，产生绿LED是很不利的。
关于一般激光切割，尤其是碳化硅及氮化镓的激光切割的问题，迄今为止没有满意的解决方案。
因此，本发明的一个目的是提供一种用碳化硅和氮化镓制造发光二极管的方法。该方法增加了量子效率并且通过去掉了台式结构及产生台式结构所必需的技术从而能以更高的生产率来生产。
本发明通过用碳化硅制造增加了发光效率的发光二极管来达到这个目的。在第一方面，本方法包括在碳化硅的一部分的一个表面上对一激光束的导向，在此部分上激光足以使得它撞击的碳化硅汽化，籍此形成该碳化硅部分的切割。然后，干法刻蚀碳化硅以除去激光切割碳化硅部分时产生的副产品。
在另一方面，本发明包括一高效的发光二极管，该二极管包括碳化硅衬底和在衬底上形成p-n结的至少两个外延层。外延层的侧边缘和衬底的侧壁重合。作成欧姆接触以在结的两端加电势，形成的结的特征在于：当在p-n结的两端加一电势差时，结产生可见光谱蓝光区的光发射。
在又一个方面，本发明包括一高效的发光二极管，该二极管的重合的外延层侧边缘具有网状表面。
在又一方面，本发明包括碳化硅发光二极管前体结构，该结构包括一由在其上有形成p-n结于其间的至少两个外延层的碳化硅衬底组成的晶片，以及在晶片里的多个沟槽。
通过以下的详细描述和附图，前述的和其它的目标以及本发明的优越性将变得更明显。
图1是根据本发明的一个发光二极管的透视图；
图2是根据本发明的一个二极管前体结构的晶片的透视图；
图3是图2中沿3-3的横截面视图，该图说明了衬底、外延层、和沟槽。
本发明是一种利用碳化硅制造增加发光效率的发光二极管的方法。在第一方面，本方法包括在碳化硅的一部分的一个表面上一激光束的导向，在此部分激光足以使得它撞击的碳化硅汽化，籍此形成碳化硅部分的切割。然后，干法刻蚀碳化硅以除去激光切割碳化硅部分时产生的副产品。
更具体地说，已经发现激光在下述的激光导向步骤工作最有效，该步骤包括对能量等于或大于被切割的碳化硅带隙的波长的光导向。尽管申请人并不希望受到任何特殊理论的限制，但看起来对应于能量小于碳化硅带隙的波长的激光在切割和汽化碳化硅时效率很低，这也许是因为吸收度的原因，因此需要极高的功率，而这就趋于弊大于利。
这样，激光导向步骤包括在6H碳化硅部分引导波长为433纳米或更短的光，或在3C碳化硅部分引导波长为539纳米或更短的光，该碳化硅的带隙为2.3eV。类似，对带隙为3.26eV的4H碳化硅，波长应为380纳米或更短，对带隙为2.99eV的15R碳化硅，波长应为415纳米或更短。
对氮化镓和它的3.36eV带隙，最好是波长为369纳米或更短的光，可以是适当的方法步骤，其与上述的方法步骤或者一致或者类似。
在本发明的优选实施方式中，激光导向步骤包括波长为355纳米或266纳米的激光导向。熟悉激光器件的人将意识到355纳米是三倍频的钕钇铝金刚砂(“Nd：YAG”)激光，而266纳米代表同样激光的四倍频率。该激光应具有至少250毫瓦的输出功率，而最好大约为800毫瓦。对直径大约为0.4mil(1000mil＝1英寸)的一束光，在切割材料上能产生大约77至247千瓦/平方厘米的功率密度。
一些晶体材料的特性和两倍、三倍、四倍或其它倍乘激光频率的技术已被很好地了解，在此就不另外加以详细描述。然而，作为并不是限定性的例子，美国专利号3,949,323；4,884,277；和5,144,630说明了这些特性和技术的一部分。
如前所述，迄今为止妨碍半导体材料的激光切割得到广泛应用的一个缺点是它产生的熔渣材料，该材料保留在切割半导体材料的表面，特别是布满器件前体的晶片。这些副产品最后或多或少地损坏或毁坏晶片上的器件前体。
迄今为止，还没有获得满意的除去熔渣的技术。然而，在本发明中，已经发现干法刻蚀步骤(避免“湿”--即，溶液--化学的步骤)将除去激光切割碳化硅部分时产生的副产品。特别是，干法刻蚀可以除去切割过程中形成的点缺陷，该点缺陷将降低碳化硅二极管产生的光颜色。在优选实施方式中，干法刻蚀碳化硅部分步骤包括用含氟的气体如三氟化氮、氮氧化物、三氟化氨、氧气、六氟化硫、四氟化碳、或它们的混合气体刻蚀步骤。干法刻蚀碳化硅的示例技术在美国专利号4,865,685和4,981,551中阐明，该专利在这里完全作为参考。当干法刻蚀氮化镓时，最好选用含氯气体，如Cl2(一般和H2混合)、BCl3、和SiCl4。
如刚才所述，本发明可应用于切割碳化硅的任何部分，但是最好包括在单晶碳化硅衬底上的激光导向，在该衬底上至少有两个碳化硅外延层，这些外延层之间形成发光p-n结。本方法最好包括在晶片的一个表面引导激光束，该晶片由大量邻接的碳化硅发光二极管前体组成，以一定的图案沿着晶片表面引导激光束从而在邻接的发光二极管前体之间形成大量的沟槽。然后，如刚才所述干法刻蚀晶片以除去激光束切割晶片时产生的副产品。不消说激光可以从晶片的前端或后端切割晶片，前端是器件前体部分而后端是衬底部分。
本发明还可以包括沿着切割线将被切割的碳化硅部分分离，从而形成两个碳化硅部分。当切割一个晶片时，本方法还包括干法刻蚀晶片步骤之后的沿沟槽分离晶片步骤。这种分离形成了所需要的各个LED或LED组。现今，分离可以直接用商用分离机器完成。例如，加利福尼亚州圣罗沙Dynatex的DX2+断晶片机。当然，这种商用器件是示例性而不是限定本发明的技术。
由于本发明方法的有效性，它还可以包括在晶片上导向激光的步骤之前在晶片上的二极管前体上加金属接触的步骤。和台式技术相比这提供了更有效的平面工艺的可能性和优势。
在本方法的优选实施方式中，导向激光步骤还包括Q开关激光，由此构成激光产生的沟槽内壁结构。关于激光技术的其它方面，Q开关在激光技术领域已得到很好的理解，将在其它场合进行详细讨论。优选的开关频率在大约1KHz的量级，最好大约为3KHz。这种开关频率为优选的激光频率提供了最大的功率输出。
在另一方面，本发明包括高效的发光二极管。这种二极管在图1中10所示。在这种实施方式中，二极管包括碳化硅衬底11和图1中层12和13所示的至少两个外延层。不消说，存在包括更进一步或另外的用于各种目的的外延层的器件结构。这样，这里关于两层的说明和讨论是用于解释本发明的而不仅是限定性的。
如图1所示，12和13外延层的边缘和11衬底的侧壁重合。换句话说，本发明以非台式结构制造二极管。如前所述，台式结构降低了从任意给定晶片表面积能生产的有源器件数目。与此相反，通过晶片前体结构本发明大大提高了生产潜力。
在二极管10上加上欧姆接触14和15，尽管图1显示出背部接触14完全覆盖了二极管的底部，在优选实施方式中该接触不完全覆盖底面以防止寄生光吸收。顶部接触15仅覆盖表面的小部分。
当两端加上电势时p-n结产生可见光谱的蓝光区发射。蓝光碳化硅发光二极管的本质和结构在美国专利号4,918,497和5,027,168里得到清楚的说明，这些专利和本发明一起共同转让，在这里完全作为参考。具体地说，在蓝光发光二极管中，16所示的结产生约450和490纳米的光发射。在本发明的优选实施方式中，外延层可以包括和所引用的参考专利中所述结构一致的碳化硅或氮化镓。
当把本发明引入绿光发光二极管时(例如、“用碳化硅制成的真绿光发光二极管”序列号08/290,020，1994年8月12日申请，在这里完全作为参考)，该结将产生大约520至540纳米之间的光发射。对氮化镓二极管，光发射大约在350至550纳米之间。
在本方法的优选实施方式中，外延层的侧壁以及，如果需要的话，衬底11的侧壁，是网状结构。即，它们具有带有图案的表面。在本发明前面所指的“Q开关”方法步骤可以产生这种类似描述的网状边缘，关于这种边缘的最类似的描述(尽管肯定不是一个限定性的描述)是该网状边通过一系列的逐个的钻孔以形成纵向切割线而形成。这种切割边缘更类似于柱面钻孔边缘而不是镜像表面。如背景部分所述，钻石锯产生的光滑表面和其它机械切割技术易于激励光的内部反射而不是外部发射。这样，本发明的激光切割技术在所需要的边缘产生网状结构增加了形成器件的效率。
在又一方面，本发明包括图2中以20表示的晶片所示的碳化硅发光二极管前体结构。图3是一放大了的晶片20的横截面视图，该视图显示了晶片包括一在其上形成p-n结24的至少两个外延层22和23的碳化硅衬底21。一个示例性的晶片包括具有网状结构侧壁的多个沟槽25。更进一步，在一示例性的实施方式中，在8.5mil厚度的晶片中沟槽的高宽比为6∶1，该高宽比大于钻石锯在这样薄的晶片上所能完成的高宽比。大的高宽比提供了很多优点。包括更大的暴露侧壁，结果是增加了效率，也增加了从任意给定的晶片面积形成更多器件的能力。
图3不一定是按比例示出的，但是在本发明的典型实施方式中，晶片的厚度大约为8.5mil，沟槽的宽大约为1mil，深大约为6mil。前体结构可以更进一步包括图3所示的金属化背部接触26和顶部欧姆接触27。
如前述的实施方式，外延层可以包括碳化硅或氮化镓。
尽管，在此使用“氮化镓”这个词语，应该明白本发明适用于各种III族元素的氮化物，例如共同未决申请序列号08/309,251的于1994年9月20日申请的“具有III族氮化物有源区和长寿命的垂直几何发光二极管”和序列号为08/307,173的也于1994年9月20申请的“具有III族氮化物有源区的低应变激光结构”中描述的III族氮化物。这些专利完全作为在这里描述的技术的参考，以上描述的技术将适用于这种器件的制造，也适用于完全由碳化硅制成的器件的制造。类似，本发明的方法步骤可以应用于所有器件而不仅局限于在此讨论的示范的LED。
再有，一些生长碳化硅体单晶和碳化硅外延层的技术在以前的共同转让的或仅许可于本应用的受让人的专利中描述。这些示例性的专利包括体单晶生长(No.4,866,005)、外延生长(No.4912,064)、碳化硅的干法刻蚀(Nos.4865,685和4,981,551)、和发光二极管的特殊结构(Nos.4918,497；5,027,168；和5,338,944)的专利。
说明书中已提出了本发明的优选的和示例性的实施方式，同样是说明性的，并不局限于此，在以下的权利要求中提出本发明的范围。

Claims (13)

1.一种由碳化硅制造发光效率增加了的发光二极管的方法，该方法包括：
在碳化硅的一部分的一个方向上导向一激光束以在其撞击的碳化硅中形成切割线；以及
此后除去激光切割碳化硅部分时产生的副产品；
其特征在于：
激光足以使得它撞击的碳化硅汽化；以及
除去副产品的步骤包括干法刻蚀碳化硅。
2.根据权利要求1的方法，其中激光导向步骤包括对具有其能量等于或大于被切割的碳化硅带隙的波长的激光的导向。
3.根据权利要求1的方法，其中干法刻蚀碳化硅部分的步骤包括使用含氟气体进行反应离子刻蚀。
4.根据权利要求1的方法，其中在碳化硅部分激光导向步骤包括在其上形成p-n结的至少两个碳化硅外延层的单晶碳化硅衬底上的激光的导向。
5.根据权利要求1的方法，还包括沿着切割线分离被切割碳化硅部分从而形成两个碳化硅部分。
6.根据权利要求1的方法，其中导向激光束步骤包括：
在一晶片的一个表面导向激光束，该晶片由多个邻接的碳化硅发光二极管前体组成，激光足以使得它撞击的碳化硅汽化，籍此形成碳化硅部分的切割线；
以一定的图案沿着晶片表面导向激光束从而在邻接的发光二极管前体之间形成多个沟槽；以及
干法刻蚀晶片以除去激光束切割晶片时产生的副产品。
7.根据权利要求6的方法，其中在一晶片的一个表面导向激光束步骤包括在晶片背部衬底表面导向激光束。
8.根据权利要求6的方法，其中在一晶片的一个表面导向激光束步骤包括在晶片前部器件表面导向激光束。
9.根据权利要求6的方法，还包括在晶片上导向激光步骤之前在晶片上的二极管前体加金属接触的步骤。
10.一种由氮化镓制造发光效率增加了的发光二极管的方法，该方法包括：
在一晶片的一个表面上导向激光束，该晶片由多个邻接的氮化镓发光二极管前体组成，导向激光束在所撞击氮化镓中形成切割线；
以一定的图案沿着晶片表面导向激光束从而在邻接的发光二极管前体之间形成多个沟槽；以及
然后干法刻蚀晶片以除去激光束切割晶片时产生的副产品；
其特征在于：
激光足以使得它撞击的氮化镓汽化；以及
除去副产品的步骤包括干法刻蚀晶片。
11.根据权利要求10的方法，还包括在干法刻蚀晶片步骤之后沿沟槽分离晶片。
12.根据权利要求10的方法，还包括在晶片上导向激光步骤之前在晶片上的二极管前体加金属接触的步骤。
13.根据权利要求10的方法，其中激光导向步骤包括对具有其能量等于或大于被切割的氮化镓带隙的波长的激光的导向。
CN95196058A 1994-10-07 1995-10-02 制造发光效率增加了的发光二极管的方法 Expired - Lifetime CN1092404C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/319,803 US5631190A (en) 1994-10-07 1994-10-07 Method for producing high efficiency light-emitting diodes and resulting diode structures
US08/319,803 1994-10-07

Publications (2)

Publication Number Publication Date
CN1163014A CN1163014A (zh) 1997-10-22
CN1092404C true CN1092404C (zh) 2002-10-09

Family

ID=23243704

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95196058A Expired - Lifetime CN1092404C (zh) 1994-10-07 1995-10-02 制造发光效率增加了的发光二极管的方法

Country Status (9)

Country Link
US (2) US5631190A (zh)
EP (1) EP0786150B1 (zh)
JP (1) JPH11505666A (zh)
KR (1) KR100369751B1 (zh)
CN (1) CN1092404C (zh)
AT (1) ATE174724T1 (zh)
AU (1) AU3761295A (zh)
DE (1) DE69506734T2 (zh)
WO (1) WO1996011504A1 (zh)

Families Citing this family (345)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19624677A1 (de) * 1996-06-20 1998-01-02 Siemens Ag Verfahren zur Vereinzelung von optoelektrischen Bauelementen
EP1014455B1 (en) 1997-07-25 2006-07-12 Nichia Corporation Nitride semiconductor device
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6608327B1 (en) 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683877B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP2000323797A (ja) * 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
EP1727189A2 (en) * 1999-12-27 2006-11-29 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor device
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
JP5523277B2 (ja) * 2000-04-26 2014-06-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体素子並びに発光性半導体素子の製造方法
US6534797B1 (en) 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
USRE46589E1 (en) 2001-01-16 2017-10-24 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US20040029365A1 (en) * 2001-05-07 2004-02-12 Linthicum Kevin J. Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) * 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
EP1677346B1 (en) * 2001-10-01 2011-12-14 Electro Scientific Industries, Inc. Machining substrates, particularly semiconductor wafers
JP3875867B2 (ja) * 2001-10-15 2007-01-31 新光電気工業株式会社 シリコン基板の穴形成方法
US6903446B2 (en) * 2001-10-23 2005-06-07 Cree, Inc. Pattern for improved visual inspection of semiconductor devices
US7858403B2 (en) 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
JP2003151921A (ja) * 2001-11-09 2003-05-23 Sanyo Electric Co Ltd 化合物半導体とその製造方法
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
US6635503B2 (en) 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
US6875995B2 (en) * 2002-08-16 2005-04-05 Cree, Inc. Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
WO2004027884A1 (en) * 2002-09-19 2004-04-01 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
KR101045160B1 (ko) * 2002-12-20 2011-06-30 크리 인코포레이티드 자기정렬 반도체 메사와 콘택층을 구비한 반도체 소자형성방법 및 그에 관련된 소자
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
TWI248244B (en) * 2003-02-19 2006-01-21 J P Sercel Associates Inc System and method for cutting using a variable astigmatic focal beam spot
US6885033B2 (en) * 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7667238B2 (en) * 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7084434B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7521854B2 (en) * 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
US7531380B2 (en) * 2003-04-30 2009-05-12 Cree, Inc. Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof
US7714345B2 (en) * 2003-04-30 2010-05-11 Cree, Inc. Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same
WO2004102686A1 (en) * 2003-05-09 2004-11-25 Cree, Inc. Led fabrication via ion implant isolation
TWI344706B (en) * 2003-06-04 2011-07-01 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
KR100558436B1 (ko) * 2003-06-10 2006-03-10 삼성전기주식회사 질화갈륨 단결정 기판의 제조방법
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US7041579B2 (en) * 2003-10-22 2006-05-09 Northrop Grumman Corporation Hard substrate wafer sawing process
CA2545628A1 (en) * 2003-11-12 2005-05-26 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (leds) thereon and leds so formed
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US7008861B2 (en) * 2003-12-11 2006-03-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
US7450311B2 (en) * 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
US7615689B2 (en) * 2004-02-12 2009-11-10 Seminis Vegatable Seeds, Inc. Methods for coupling resistance alleles in tomato
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
US7326583B2 (en) 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
CN101901858B (zh) * 2004-04-28 2014-01-29 沃提科尔公司 垂直结构半导体器件
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
JP4890746B2 (ja) * 2004-06-14 2012-03-07 株式会社ディスコ ウエーハの加工方法
TWI433343B (zh) * 2004-06-22 2014-04-01 Verticle Inc 具有改良光輸出的垂直構造半導體裝置
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
US7118262B2 (en) * 2004-07-23 2006-10-10 Cree, Inc. Reflective optical elements for semiconductor light emitting devices
US7557380B2 (en) * 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
TWI374552B (en) * 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
US20060038188A1 (en) * 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
US7217583B2 (en) * 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
WO2006050372A2 (en) 2004-11-01 2006-05-11 The Regents Of The University Of California Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking
TWI389334B (zh) * 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
US7322732B2 (en) * 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
NL1029688C2 (nl) * 2005-08-05 2007-02-06 Lemnis Lighting Ip Gmbh Werkwijze voor het vervaardigen van een elektrische schakeling voorzien van een veelvoud van LED's.
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7304694B2 (en) * 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
US7170100B2 (en) 2005-01-21 2007-01-30 Luminus Devices, Inc. Packaging designs for LEDs
US7692207B2 (en) * 2005-01-21 2010-04-06 Luminus Devices, Inc. Packaging designs for LEDs
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7939842B2 (en) * 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
TWI342613B (en) * 2005-02-14 2011-05-21 Showa Denko Kk Nitride semiconductor light-emitting device and method for fabrication thereof
US20070045640A1 (en) 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US20070085098A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patterned devices and related methods
US7348603B2 (en) * 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US7388233B2 (en) * 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
US7391059B2 (en) 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US20080099777A1 (en) * 2005-10-19 2008-05-01 Luminus Devices, Inc. Light-emitting devices and related systems
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
TWI270223B (en) * 2005-11-21 2007-01-01 Epistar Corp A method of making a light emitting element
CN100407461C (zh) * 2005-11-28 2008-07-30 晶元光电股份有限公司 高发光效率的发光元件的制造方法
US7768192B2 (en) 2005-12-21 2010-08-03 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
EP1964104A4 (en) 2005-12-21 2012-01-11 Cree Inc SHIELD AND LIGHTING PROCEDURE
CN101460779A (zh) 2005-12-21 2009-06-17 科锐Led照明技术公司 照明装置
US7614759B2 (en) 2005-12-22 2009-11-10 Cree Led Lighting Solutions, Inc. Lighting device
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US7442564B2 (en) * 2006-01-19 2008-10-28 Cree, Inc. Dispensed electrical interconnections
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US7521728B2 (en) * 2006-01-20 2009-04-21 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
US8264138B2 (en) * 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
US8969908B2 (en) * 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
KR100764432B1 (ko) * 2006-04-05 2007-10-05 삼성전기주식회사 아노다이징 절연 층을 갖는 엘이디 패키지 및 그 제조방법
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US9921428B2 (en) 2006-04-18 2018-03-20 Cree, Inc. Light devices, display devices, backlighting devices, edge-lighting devices, combination backlighting and edge-lighting devices
BRPI0710463A2 (pt) 2006-04-18 2011-08-16 Cree Led Lighting Solutions dispositivo e método de iluminação
EP2052589A4 (en) 2006-04-18 2012-09-19 Cree Inc LIGHTING DEVICE AND METHOD
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
WO2007130536A2 (en) 2006-05-05 2007-11-15 Cree Led Lighting Solutions, Inc. Lighting device
JP2009538531A (ja) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および、製造方法
US8033692B2 (en) * 2006-05-23 2011-10-11 Cree, Inc. Lighting device
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
US8596819B2 (en) 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
US7943952B2 (en) * 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
US7763478B2 (en) * 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
EP3624560A1 (en) 2006-08-23 2020-03-18 IDEAL Industries Lighting LLC Lighting device and lighting method
WO2008033986A2 (en) 2006-09-13 2008-03-20 Cree Led Lighting Solutions, Inc. Lighting device
EP2066968B1 (en) 2006-09-18 2016-04-27 Cree, Inc. Lighting devices, lighting assemblies, fixtures and methods using same
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
JP4544231B2 (ja) * 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
TWI475714B (zh) 2006-11-07 2015-03-01 克里公司 照明裝置及照明方法
US10295147B2 (en) * 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
TWI496315B (zh) 2006-11-13 2015-08-11 Cree Inc 照明裝置、被照明的殼體及照明方法
US8486742B2 (en) 2006-11-21 2013-07-16 Epistar Corporation Method for manufacturing high efficiency light-emitting diodes
CN101622493A (zh) 2006-12-04 2010-01-06 科锐Led照明科技公司 照明装置和照明方法
EP2111640B1 (en) * 2007-01-22 2019-05-08 Cree, Inc. Fault tolerant light emitter and method of fabricating the same
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
TWI440210B (zh) 2007-01-22 2014-06-01 Cree Inc 使用發光裝置外部互連陣列之照明裝置及其製造方法
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US9061450B2 (en) 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
US8110425B2 (en) * 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US7910944B2 (en) * 2007-05-04 2011-03-22 Cree, Inc. Side mountable semiconductor light emitting device packages and panels
EP2469151B1 (en) 2007-05-08 2018-08-29 Cree, Inc. Lighting devices and methods for lighting
WO2008137983A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US20090002979A1 (en) * 2007-06-27 2009-01-01 Cree, Inc. Light emitting device (led) lighting systems for emitting light in multiple directions and related methods
US8042971B2 (en) 2007-06-27 2011-10-25 Cree, Inc. Light emitting device (LED) lighting systems for emitting light in multiple directions and related methods
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
CN101743488B (zh) * 2007-07-17 2014-02-26 科锐公司 具有内部光学特性结构的光学元件及其制造方法
US20090039375A1 (en) * 2007-08-07 2009-02-12 Cree, Inc. Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
WO2009055079A1 (en) * 2007-10-26 2009-04-30 Cree Led Lighting Solutions, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US9754926B2 (en) 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US8866410B2 (en) 2007-11-28 2014-10-21 Cree, Inc. Solid state lighting devices and methods of manufacturing the same
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8940561B2 (en) * 2008-01-15 2015-01-27 Cree, Inc. Systems and methods for application of optical materials to optical elements
US8058088B2 (en) 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
US8178888B2 (en) * 2008-02-01 2012-05-15 Cree, Inc. Semiconductor light emitting devices with high color rendering
WO2009100358A1 (en) 2008-02-08 2009-08-13 Illumitex, Inc. System and method for emitter layer shaping
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US9147812B2 (en) * 2008-06-24 2015-09-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
US7955875B2 (en) * 2008-09-26 2011-06-07 Cree, Inc. Forming light emitting devices including custom wavelength conversion structures
US8445824B2 (en) * 2008-10-24 2013-05-21 Cree, Inc. Lighting device
US8008845B2 (en) * 2008-10-24 2011-08-30 Cree, Inc. Lighting device which includes one or more solid state light emitting device
US8858032B2 (en) * 2008-10-24 2014-10-14 Cree, Inc. Lighting device, heat transfer structure and heat transfer element
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US10197240B2 (en) * 2009-01-09 2019-02-05 Cree, Inc. Lighting device
TWI470823B (zh) * 2009-02-11 2015-01-21 Epistar Corp 發光元件及其製造方法
US8950910B2 (en) * 2009-03-26 2015-02-10 Cree, Inc. Lighting device and method of cooling lighting device
US9841162B2 (en) 2009-05-18 2017-12-12 Cree, Inc. Lighting device with multiple-region reflector
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8216867B2 (en) 2009-06-10 2012-07-10 Cree, Inc. Front end scribing of light emitting diode (LED) wafers and resulting devices
US20110012141A1 (en) 2009-07-15 2011-01-20 Le Toquin Ronan P Single-color wavelength-converted light emitting devices
US8716952B2 (en) * 2009-08-04 2014-05-06 Cree, Inc. Lighting device having first, second and third groups of solid state light emitters, and lighting arrangement
US8648546B2 (en) 2009-08-14 2014-02-11 Cree, Inc. High efficiency lighting device including one or more saturated light emitters, and method of lighting
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9605844B2 (en) * 2009-09-01 2017-03-28 Cree, Inc. Lighting device with heat dissipation elements
US8901845B2 (en) 2009-09-24 2014-12-02 Cree, Inc. Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods
US9713211B2 (en) 2009-09-24 2017-07-18 Cree, Inc. Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof
US10264637B2 (en) 2009-09-24 2019-04-16 Cree, Inc. Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof
US8602579B2 (en) 2009-09-25 2013-12-10 Cree, Inc. Lighting devices including thermally conductive housings and related structures
WO2011037877A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device with low glare and high light level uniformity
US9464801B2 (en) 2009-09-25 2016-10-11 Cree, Inc. Lighting device with one or more removable heat sink elements
US9285103B2 (en) * 2009-09-25 2016-03-15 Cree, Inc. Light engines for lighting devices
WO2011037876A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device having heat dissipation element
US8777449B2 (en) * 2009-09-25 2014-07-15 Cree, Inc. Lighting devices comprising solid state light emitters
US9353933B2 (en) * 2009-09-25 2016-05-31 Cree, Inc. Lighting device with position-retaining element
US9068719B2 (en) * 2009-09-25 2015-06-30 Cree, Inc. Light engines for lighting devices
US8845137B2 (en) 2009-09-25 2014-09-30 Cree, Inc. Lighting device having heat dissipation element
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US9030120B2 (en) * 2009-10-20 2015-05-12 Cree, Inc. Heat sinks and lamp incorporating same
US9217542B2 (en) 2009-10-20 2015-12-22 Cree, Inc. Heat sinks and lamp incorporating same
WO2011071886A1 (en) * 2009-12-07 2011-06-16 J.P. Sercel Associates, Inc. Laser machining and scribing systems and methods
US20130256286A1 (en) * 2009-12-07 2013-10-03 Ipg Microsystems Llc Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8508116B2 (en) 2010-01-27 2013-08-13 Cree, Inc. Lighting device with multi-chip light emitters, solid state light emitter support members and lighting elements
WO2011100193A1 (en) 2010-02-12 2011-08-18 Cree, Inc. Lighting device with heat dissipation elements
WO2011100224A2 (en) 2010-02-12 2011-08-18 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
US9518715B2 (en) * 2010-02-12 2016-12-13 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
WO2011100195A1 (en) 2010-02-12 2011-08-18 Cree, Inc. Solid state lighting device, and method of assembling the same
US8773007B2 (en) 2010-02-12 2014-07-08 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8508127B2 (en) * 2010-03-09 2013-08-13 Cree, Inc. High CRI lighting device with added long-wavelength blue color
US8476836B2 (en) 2010-05-07 2013-07-02 Cree, Inc. AC driven solid state lighting apparatus with LED string including switched segments
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US8896005B2 (en) 2010-07-29 2014-11-25 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
US8960989B2 (en) 2010-08-09 2015-02-24 Cree, Inc. Lighting devices with removable light engine components, lighting device elements and methods
US8410679B2 (en) 2010-09-21 2013-04-02 Cree, Inc. Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface
US9515229B2 (en) 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
US8573804B2 (en) 2010-10-08 2013-11-05 Guardian Industries Corp. Light source, device including light source, and/or methods of making the same
US9293653B2 (en) 2010-10-08 2016-03-22 Guardian Industries Corp. Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same
US8357553B2 (en) 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
US8492788B2 (en) 2010-10-08 2013-07-23 Guardian Industries Corp. Insulating glass (IG) or vacuum insulating glass (VIG) unit including light source, and/or methods of making the same
US8434904B2 (en) 2010-12-06 2013-05-07 Guardian Industries Corp. Insulated glass units incorporating emitters, and/or methods of making the same
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
CN102544250B (zh) * 2010-12-27 2014-05-07 同方光电科技有限公司 一种GaN基发光二极管的制作方法
US8589120B2 (en) 2011-01-28 2013-11-19 Cree, Inc. Methods, systems, and apparatus for determining optical properties of elements of lighting components having similar color points
US9053958B2 (en) 2011-01-31 2015-06-09 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
US9401103B2 (en) 2011-02-04 2016-07-26 Cree, Inc. LED-array light source with aspect ratio greater than 1
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US10098197B2 (en) 2011-06-03 2018-10-09 Cree, Inc. Lighting devices with individually compensating multi-color clusters
US8847513B2 (en) 2011-03-08 2014-09-30 Cree, Inc. Method and apparatus for controlling light output color and/or brightness
US10030863B2 (en) 2011-04-19 2018-07-24 Cree, Inc. Heat sink structures, lighting elements and lamps incorporating same, and methods of making same
US8921875B2 (en) 2011-05-10 2014-12-30 Cree, Inc. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods
US9839083B2 (en) 2011-06-03 2017-12-05 Cree, Inc. Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same
US8906263B2 (en) 2011-06-03 2014-12-09 Cree, Inc. Red nitride phosphors
US8729790B2 (en) 2011-06-03 2014-05-20 Cree, Inc. Coated phosphors and light emitting devices including the same
US8814621B2 (en) 2011-06-03 2014-08-26 Cree, Inc. Methods of determining and making red nitride compositions
US8747697B2 (en) 2011-06-07 2014-06-10 Cree, Inc. Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same
US8616724B2 (en) 2011-06-23 2013-12-31 Cree, Inc. Solid state directional lamp including retroreflective, multi-element directional lamp optic
US8757840B2 (en) 2011-06-23 2014-06-24 Cree, Inc. Solid state retroreflective directional lamp
US8777463B2 (en) 2011-06-23 2014-07-15 Cree, Inc. Hybrid solid state emitter printed circuit board for use in a solid state directional lamp
US8777455B2 (en) 2011-06-23 2014-07-15 Cree, Inc. Retroreflective, multi-element design for a solid state directional lamp
US8684569B2 (en) 2011-07-06 2014-04-01 Cree, Inc. Lens and trim attachment structure for solid state downlights
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
JP2014525146A (ja) 2011-07-21 2014-09-25 クリー インコーポレイテッド 発光デバイス、パッケージ、部品、ならびに改良された化学抵抗性のための方法および関連する方法
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
US8742671B2 (en) 2011-07-28 2014-06-03 Cree, Inc. Solid state lighting apparatus and methods using integrated driver circuitry
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
US9318669B2 (en) 2012-01-30 2016-04-19 Cree, Inc. Methods of determining and making red nitride compositions
US9554445B2 (en) 2012-02-03 2017-01-24 Cree, Inc. Color point and/or lumen output correction device, lighting system with color point and/or lumen output correction, lighting device, and methods of lighting
US10378749B2 (en) 2012-02-10 2019-08-13 Ideal Industries Lighting Llc Lighting device comprising shield element, and shield element
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US20130310903A1 (en) * 2012-03-21 2013-11-21 Catherine Y. LI Anti-Depression Light-Wave Device and Usage Thereof
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
US8608525B1 (en) 2012-06-05 2013-12-17 Guardian Industries Corp. Coated articles and/or devices with optical out-coupling layer stacks (OCLS), and/or methods of making the same
US9316382B2 (en) 2013-01-31 2016-04-19 Cree, Inc. Connector devices, systems, and related methods for connecting light emitting diode (LED) modules
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9039746B2 (en) 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9565782B2 (en) 2013-02-15 2017-02-07 Ecosense Lighting Inc. Field replaceable power supply cartridge
US9055643B2 (en) 2013-03-13 2015-06-09 Cree, Inc. Solid state lighting apparatus and methods of forming
JP6309211B2 (ja) * 2013-06-14 2018-04-11 新電元工業株式会社 炭化ケイ素半導体装置
DE102013108583A1 (de) 2013-08-08 2015-03-05 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
US9240528B2 (en) 2013-10-03 2016-01-19 Cree, Inc. Solid state lighting apparatus with high scotopic/photopic (S/P) ratio
US10477636B1 (en) 2014-10-28 2019-11-12 Ecosense Lighting Inc. Lighting systems having multiple light sources
WO2016073678A1 (en) 2014-11-06 2016-05-12 Koninklijke Philips N.V. Light emitting device with trench beneath a top contact
US10431568B2 (en) 2014-12-18 2019-10-01 Cree, Inc. Light emitting diodes, components and related methods
US11306897B2 (en) 2015-02-09 2022-04-19 Ecosense Lighting Inc. Lighting systems generating partially-collimated light emissions
US9869450B2 (en) 2015-02-09 2018-01-16 Ecosense Lighting Inc. Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector
US9651227B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Low-profile lighting system having pivotable lighting enclosure
US9746159B1 (en) 2015-03-03 2017-08-29 Ecosense Lighting Inc. Lighting system having a sealing system
US9568665B2 (en) 2015-03-03 2017-02-14 Ecosense Lighting Inc. Lighting systems including lens modules for selectable light distribution
US9651216B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Lighting systems including asymmetric lens modules for selectable light distribution
CN113130725A (zh) 2015-03-31 2021-07-16 科锐Led公司 具有包封的发光二极管和方法
WO2016176625A1 (en) 2015-04-30 2016-11-03 Cree, Inc. Solid state lighting components
USD785218S1 (en) 2015-07-06 2017-04-25 Ecosense Lighting Inc. LED luminaire having a mounting system
US10074635B2 (en) 2015-07-17 2018-09-11 Cree, Inc. Solid state light emitter devices and methods
USD782094S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
USD782093S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
US9651232B1 (en) 2015-08-03 2017-05-16 Ecosense Lighting Inc. Lighting system having a mounting device
CN109791968A (zh) 2016-07-26 2019-05-21 克利公司 发光二极管、组件和相关方法
WO2018052902A1 (en) 2016-09-13 2018-03-22 Cree, Inc. Light emitting diodes, components and related methods
US10804251B2 (en) 2016-11-22 2020-10-13 Cree, Inc. Light emitting diode (LED) devices, components and methods
US10439114B2 (en) 2017-03-08 2019-10-08 Cree, Inc. Substrates for light emitting diodes and related methods
US10410997B2 (en) 2017-05-11 2019-09-10 Cree, Inc. Tunable integrated optics LED components and methods
EP3428975A1 (en) 2017-07-14 2019-01-16 AGC Glass Europe Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same
US10672957B2 (en) 2017-07-19 2020-06-02 Cree, Inc. LED apparatuses and methods for high lumen output density
US11107857B2 (en) 2017-08-18 2021-08-31 Creeled, Inc. Light emitting diodes, components and related methods
US11101248B2 (en) 2017-08-18 2021-08-24 Creeled, Inc. Light emitting diodes, components and related methods
US10361349B2 (en) 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
CN109659220A (zh) * 2017-10-11 2019-04-19 中国科学院半导体研究所 激光辅助无掩膜高深宽比碳化硅深槽孔结构制备方法
US10541353B2 (en) 2017-11-10 2020-01-21 Cree, Inc. Light emitting devices including narrowband converters for outdoor lighting applications
US10734560B2 (en) 2017-11-29 2020-08-04 Cree, Inc. Configurable circuit layout for LEDs
DE102018107922A1 (de) * 2018-04-04 2019-10-10 Infineon Technologies Ag Verfahren zum Verarbeiten eines Siliciumcarbid enthaltenden kristallinen Substrats, Siliciumcarbidchip und Verarbeitungskammer
US10573543B2 (en) 2018-04-30 2020-02-25 Cree, Inc. Apparatus and methods for mass transfer of electronic die
US11024785B2 (en) 2018-05-25 2021-06-01 Creeled, Inc. Light-emitting diode packages
US10453827B1 (en) 2018-05-30 2019-10-22 Cree, Inc. LED apparatuses and methods
US11101410B2 (en) 2018-05-30 2021-08-24 Creeled, Inc. LED systems, apparatuses, and methods
EP3776674A1 (en) 2018-06-04 2021-02-17 Cree, Inc. Led apparatuses, and method
JP6491784B1 (ja) * 2018-08-03 2019-03-27 株式会社日立パワーソリューションズ 単結晶炭化ケイ素基板、単結晶炭化ケイ素基板の製造方法、および半導体レーザ
US10964866B2 (en) 2018-08-21 2021-03-30 Cree, Inc. LED device, system, and method with adaptive patterns
US11233183B2 (en) 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11335833B2 (en) 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11101411B2 (en) 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures
CN110526205A (zh) * 2019-08-27 2019-12-03 西安交通大学 一种等离子体刻蚀辅助激光加工碳化硅的方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626141A (en) * 1970-04-30 1971-12-07 Quantronix Corp Laser scribing apparatus
US3824678A (en) * 1970-08-31 1974-07-23 North American Rockwell Process for laser scribing beam lead semiconductor wafers
US3866398A (en) * 1973-12-20 1975-02-18 Texas Instruments Inc In-situ gas-phase reaction for removal of laser-scribe debris
JPS5157283A (en) * 1974-11-15 1976-05-19 Nippon Electric Co Handotaikibanno bunkatsuhoho
NL7609815A (nl) * 1976-09-03 1978-03-07 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
JPS5916344A (ja) * 1982-07-19 1984-01-27 Toshiba Corp ウエハのレ−ザスクライブ装置
US4529829A (en) * 1982-11-24 1985-07-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US4626613A (en) * 1983-12-23 1986-12-02 Unisearch Limited Laser grooved solar cell
DE3506995A1 (de) * 1985-02-27 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von blaulicht-leds und anordnung zur durchfuehrung des verfahrens
US4783421A (en) * 1985-04-15 1988-11-08 Solarex Corporation Method for manufacturing electrical contacts for a thin-film semiconductor device
US4599134A (en) * 1985-06-10 1986-07-08 Ibm Corporation Plasma etching with tracer
FR2617979B1 (fr) * 1987-07-10 1989-11-10 Thomson Semiconducteurs Dispositif de detection de la depassivation d'un circuit integre
US4865685A (en) * 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
JP2650730B2 (ja) * 1988-08-08 1997-09-03 シャープ株式会社 炭化珪素半導体を用いたｐｎ接合型発光ダイオード
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
US4948461A (en) * 1989-10-16 1990-08-14 Eastman Kodak Company Dry-etching method and plasma
JPH07120646B2 (ja) * 1990-05-16 1995-12-20 株式会社東芝 メサ型半導体ペレットの製造方法
KR940005622B1 (ko) * 1991-10-22 1994-06-21 현대전자산업 주식회사 화합물 반도체의 광전기 화학적 식각장치
JPH0640797A (ja) * 1992-04-23 1994-02-15 Sumitomo Electric Ind Ltd ダイヤモンドの加工方法
JPH0645651A (ja) * 1992-05-22 1994-02-18 Sanyo Electric Co Ltd ｎ型ＳｉＣ用電極とその形成方法
JPH05330806A (ja) * 1992-05-26 1993-12-14 Sumitomo Electric Ind Ltd 立方晶窒化ホウ素の加工方法
JP2780744B2 (ja) * 1992-11-06 1998-07-30 信越半導体株式会社 ＧａＡｌＡｓ発光素子の製造方法
DE4305296C3 (de) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
US5432808A (en) * 1993-03-15 1995-07-11 Kabushiki Kaisha Toshiba Compound semicondutor light-emitting device
US5387776A (en) * 1993-05-11 1995-02-07 General Electric Company Method of separation of pieces from super hard material by partial laser cut and pressure cleavage
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices

Also Published As

Publication number Publication date
EP0786150B1 (en) 1998-12-16
AU3761295A (en) 1996-05-02
US5631190A (en) 1997-05-20
US5912477A (en) 1999-06-15
JPH11505666A (ja) 1999-05-21
DE69506734D1 (de) 1999-01-28
KR100369751B1 (ko) 2003-04-11
KR970706617A (ko) 1997-11-03
CN1163014A (zh) 1997-10-22
ATE174724T1 (de) 1999-01-15
WO1996011504A1 (en) 1996-04-18
DE69506734T2 (de) 1999-07-15
EP0786150A1 (en) 1997-07-30

Similar Documents

Publication Publication Date Title
CN1092404C (zh) 制造发光效率增加了的发光二极管的方法
US8216867B2 (en) Front end scribing of light emitting diode (LED) wafers and resulting devices
KR100649769B1 (ko) 반도체 발광 다이오드 및 그 제조 방법
EP1376687A2 (en) Semiconductor element and method for producing the same
CN101268562B (zh) Ⅲ族氮化物半导体发光器件
CN1813347A (zh) 半导体芯片的制造方法
CN1610135A (zh) 发光器件及其制造方法
CN1729600A (zh) 具有自对准半导体平台和接触层的半导体器件和相关器件的制造方法
JP2914014B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
JP2001284293A (ja) 半導体ウエハーのチップ分割方法
JP2748355B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
ES2316680T3 (es) Laseres de ingaas/gaas sobre silicio producidos mediante lepecvd y mocvd.
JP4872753B2 (ja) 窒化物ｌｅｄ素子の製造方法
JP3227287B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法と窒化ガリウム系化合物半導体素子
JP2015532012A (ja) 成形された基板を含む発光デバイス
CN107749565B (zh) Si基垂直腔面发射芯片
US20100038656A1 (en) Nitride LEDs based on thick templates
KR101303589B1 (ko) 질화물계 반도체 발광 소자 및 그의 제조 방법
JP3679626B2 (ja) 窒化ガリウム系化合物半導体チップ
KR101088392B1 (ko) 발광소자 칩 및 이의 제조방법
KR20010009602A (ko) 질화물 반도체 백색 발광소자
JP4656888B2 (ja) 基板の分割方法
JP3938101B2 (ja) 発光素子の製造方法
JP3454355B2 (ja) 窒化ガリウム系化合物半導体発光素子
CA2201744A1 (en) Method for producing high efficiency light-emitting diodes and resulting diode structures

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20021009

EXPY Termination of patent right or utility model