CN1079820A - 反射镜已涂膜的法布里-珀罗装置 - Google Patents
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Abstract
一种法布里-珀罗标准装置或干涉仪，它的两个
金属反射镜在背离间隙的一侧表面上都涂有介质
膜。这种类似于通常涂布在光学仪器零件上供增透
用的介质膜可提高峰值透过率而不降低条纹间隔和
宽度比。上述介质膜层可透过所用波长(λ)的光，且
其厚度最好为λ/n，n为介质膜层物质的折射
率。涂层最好用具有高折射率的物质，例如包括
ZrO2、TiO2、SnS、或ZnSc。
Description
本发明涉及法布里-珀罗标准器件和干涉仪，为简便起见，下面统称为法布里-珀罗装置。
法布里-珀罗装置是众所周知的重要的光学装置。它们可用作精确的干涉仪（例如用于分光镜）、激光谐振腔、或者更具体地说，用作为单模激光器激光谐振腔中的嵌入件。当前，法布里-珀罗装置又被推荐用作光学互连件的反射或透射调制器。
法布里-珀罗装置通常包含两个由一定的光程长（间隙）隔开的反射表面（反射镜）。在一种法布里-珀罗干涉仪中，由两个反射镜围起的间隙通常含有空气，并可通过机械方法（例如移动一个反射镜）来改变。在一种法布里-珀罗标准器件中，反射镜通常保持固定，例如采用石英或玻璃之类材料制成的定位架来固定。干涉仪的一般间隙宽度从几个毫米到几个厘米。当把法布里-珀罗装置用作激光谐振腔时，其间隙宽度通常要大得多。在某些用途（包括调制器）中，间隙的宽度可约为1至几毫米。
法布里-珀罗装置一般使用两种类型的反射镜，即所谓某种材料的四分之一波长组件（QWS）（这种材料单层使用时反射能力不大），或由单层材料组成的反射镜（此种材料本身即具有反射性，通常包含有金属或金属化合物）。两个反射镜常取平面平行形式，但是，曲面反射镜系统也属周知的，尤其是用作激光谐振腔和作为光谱分析仪时更是常见。
本发明所涉及的这种法布里-珀罗装置含有两块由同一反射物质（如金属）构成的反射镜。从前面所述可知，这两块反射镜的内表面相互隔开而形成一间隙，该间隙的宽度可任意选定。
英国专利2，082，380号公开了一种用于半导体发射激光器的法布里-珀罗标准器件。该法布里-珀罗器件的一个反射镜的内表面上涂有一种四分之一波长增透膜层，以便拓宽光谱发射范围，增大单膜工作范围和减少远场图形的分散。而在另一个反射镜的内表面必要时可涂上一种半波长层。
在Annales de Physique（1951，第6卷 第5页）所报导的一类法布里-珀罗装置中，它的两个金属反射镜在面对间隙的侧面上均涂一层介质膜。该文的结论称，这层单一的介质膜并不能显著提高法布里-珀罗装置的反射率。
欧洲专利371，695号涉及一种以QWS法布里-珀罗装置为基础的空间光调制器，其中的间隙包含有一液晶层，而所述法布里-珀罗装置还包括有金属电极。该调制器中的反射镜则是多层介质膜（即四分之一波长组件）。
国际版Thin Solid Films（1968，Vol.137，No.2，P161～168）和Optik（1978，Vol.50，No.4，P329～340）也介绍过QWS法布里-珀罗装置。
在当前所发展的技术中还包括周知的一种法布里-珀罗装置。C.法布里和A.珀罗最早所研制的干涉仪例如包含着两块透明的具有平表面的（玻璃或石英）平板。这两块平板的内表面涂有高反射率的部分透明膜，并且是平行的，从而围成一个空气间隙。这两块透明板用作为反射涂层的基板。上述这些和其他周知的法布里-珀罗反射镜通常含有一种作为反射表面的金属（金、银或铝等）或一种金属化合物。
自然，法布里-珀罗反射镜具有很高的反射率（例如90%以上），但是它们也具有某种程度的透射率。此外，由本身具有反射作用的材料制成的反射镜，尤其是金属反射镜，往往会吸收入射光。
由于反射镜有很高的反射本领，它的反射率和透射率相对于入射光的波长都显现出一列峰值。如果反射镜之间的间距远较波长为大（一般都是这种情况），则这些峰值近似地相对于波长具有周期性。相继两峰值的相隔距离（自由光谱范围或频移范围）与最大峰值之半处的全宽度比常用来标志法布里-珀罗装置的质量。该比值是无量纲值，称为“条纹间隔和宽度比（finesse）”。对于许多用途来说，希望有高的条纹间隔和宽度比，
为了达到高的条纹间隔和宽度比，一般需要高的反射率。在由金属或金属化合物组成反射镜的那种法布里-珀罗装置中，常常是通过提高吸收率来提高反射率的。因此在这类法布里-珀罗装置中，要求有高的条纹间隔和宽度比往往与要求有高的峰值透射率相抵触。因此，希望能在对条纹间隙和宽度比无不利影响的情况下，相对于峰值透射率来改进法布里-珀罗装置。
本发明的目的是提供一种上述类型的法布里-珀罗装置，其反射镜采用具有自身反射作用的材料，例如金属或金属化合物。这种法布里-珀罗装置可以在保持高的条纹间隔和宽度比的同时，提高透射率。本发明的另一个目的是提供这样一种法布里-珀罗装置，其反射镜的材料是具有自身反射作用的（例如金属），这种法布里-珀罗装置可在保持良好透射率的同时，提供其条纹间隔和宽度比。本发明的再一个目的是提供一种带有金属反射镜且同时具有高透射率和高的条纹间隔和宽度比的法布里-珀罗装置。
本发明的要点是，在上述类型的法布里-珀罗装置中，每个反射镜在其背离间隙的侧面上涂有介质膜。
上述介质膜可看作是类似于通常涂敷于光学仪器零件上之类的增透膜，但其功用很不相同。在这方面必须清楚地认识到，用在反射镜外表面上的这种增透膜有利于达到所需目的，而法布里-珀罗装置的工作区域（实现此种目的的区域）是在那种间隙之内，即在反射镜的内侧面上。
下面说明本发明的各种实施例。
前述的介质膜应在实质上能透过所用波长的光。下面所述本发明的法布里-珀罗装置适用于波长假定为λ的光。实际上，这种光完全可以是单一波长的光，但也可以是多色光。在后一种情况，λ为平均波长。
当介质膜的厚度为约0.1λ/n～约0.5λ/n（n为介质材料的折射率），其功能一般是很好的。最好是使介质膜的厚度为 1/4 λ/n左右。显然应理解到，这些厚度包括上述范围加上一或多个半波长，因为所得到的作用是周期性的，而其周期为 1/2 λ。
应该明白，本发明的这种法布里-珀罗装置显然不同于以四分之一波长组件作为反射镜的法布里-珀罗装置。如上所述，本发明属于反射镜由反射物质（也就是本身有反射作用的物质）例如金属或金属化合物组成的法布里-珀罗装置。以前涉及的高的峰值透过率和高条纹间隔和宽度比这两种要求相矛盾的问题，是由此种反射物质组成的反射镜之吸收能力造成的，并且在以四分之一波长组件作为反射镜的法布里-珀罗装置中，终究也不会有显著影响的。这种法布里-珀罗装置不属于本发明的范围，而且制造上也很困难，因为在制造过程中必须沉积多层两种不同折射率的四分之一波长的膜层。
在一种采用C.Fabry和A.Perot提出的原始结构的法布里-珀罗装置的实施例中，也就是在一种反射镜是由内侧（即面向间隙的一侧）上涂有反射物质的透射基板组成的法布里-珀罗装置中，本发明的介质膜是涂布在反射物质与基板之间的。
合适的介质膜包括任一种无机、有机或聚合物物质，只要它们对于所用波长能满足形成一种折射率高于间隙物质（通常是空气或玻璃）的非吸收层的主要要求。无机物质的例子包括众所周知的通常用作增透膜的冰晶石（氟化铝钠）、氟化镁、氟化铈或者它们的混合物这样一类物质。聚合物质的例子有用作光学透镜的材料、如二甘醇双碳酸丙烯酯等。
业已发现，介质膜的折射率越高，则本发明的法布里-珀罗装置的性能也越好。为此，介质膜的折射率最好高于2.0。实际上，这些物质可以根据法布里-珀罗装置的工作范围求得。它们通常在上述四分之一波长组件中构成高折射率层。从这一点看，介质膜最好含有ZrO2、TiO2、ZnS、ZnSe或者它们的混合物。
应该看到，一般说来，对两个反射镜的表面涂上同样的介质膜是方便的，但是，它们也可涂布上的不同的涂层。
在上述条件下，反射镜上带有一层介质膜就足以提高峰值透过率。对于各种应用，一般不需要进一步提高透过率，有时甚至不希望进一步提高。然而，如果希望在保持条纹间隔和宽度比的条件下，使峰值透过率最佳地增大时，便要求反射镜的厚度适应于形成一种使间隔内部的反射率保持不变的介质膜。概括地说，在特定的情况下，是不能预知能否通过增加或降低厚度来获得所需的这种适应性的，但是，熟悉本项技术的人可以用M.Born和E.Wolf在“光学原理”（Pergamon Press，Oxford，第4版，1970）第51页和第611页中所描述的Abelès理论进行计算。
本发明的法布里-珀罗装置的另一类结构属常规结构。故其间隙物质可以是空气、玻璃、石英或任何其它适用的物质，例如透明的有机聚合物。如果法布里-珀罗装置是用作光学互连用的透射调制器，则间隙物质可以是非线性（NLO）物质，最好是NLO聚合物。在本项技术中，NLO物质是人所共知的，在这里不需作进一步说明。适用的NLO聚合物例如有EP350112、EP350113、EP358476、EP445864、EP378185和EP359648等欧洲专利中所提到的那些。
反射镜可采用任何合适的反射物质，而且这类反射物质本身是众所周知的。这种物质一般有金属，更具体地说，有金、银或铝等。
下面参考所举各例详述本发明。所列例子只是供说明用，并无限制本发明之意。
比较例
供比较用的法布里-珀罗装置是一种用于波长约为514.5nm的标准装置，它含有两个平面平行的银反射镜，镜子间隙为1mm，间隙中有折射率为1.55的玻璃。反射镜厚度为50nm，无介质膜。
对于接近514.5nm的波长，该法布里-珀罗标准装置在条纹间隔与宽度比为20时的峰值透过率为3.7%
例1
本实施例的法布里-珀罗装置是一种如上所述的标准装置，反射镜的外表面（即与间隙相背的表面）上涂有ZnS介质膜。介质膜的厚度为55.9nm，折射率为2.3，也就是说，本发明的法布里-珀罗标准装置含有 1/4 λ/n的介质膜。
对于接近514.5nm的波长，本实施例的法布里-珀罗标准装置在条纹间隔与宽度比为21时的峰值透过率为9.7%。
例2
本实施例的法布里-珀罗装置是一种与例1相似的标准装置，反射镜的厚度调整到47.8nm，以便使其内反射率与比较例中不带涂层的法布里-珀罗标准装置相同。
对于接近514.5nm的波长，本实施例的法布里-珀罗标准装置在条纹间隔与宽度比为20时的峰值透过率为12.5%
Claims (12)
1、一种法布里-珀罗装置，它含有两个带有金属之类反射物质的反射镜，这两个反射镜彼此分开而形成一个间隙，间隙的宽度是任意固定的，其特征在于，上述两反射镜中的每一个都在其背离间隙的一侧表面上涂有介质膜。
2、如权利要求1所述的适用于单波长或平均波长为λ之光的法布里-珀罗装置，其特征在于，上述介质膜的折射率为n，厚度为约0.1λ/n～约0.5λ/n。
3、如权利要求2所述的法布里-珀罗装置，其特征在于，上述介质膜的厚度为 1/4 λ/n。
4、如上述权利要求中任一项所述的法布里-珀罗装置，其特征在于，上述反射镜的厚度调整到使其内侧的反射率保持在与不带涂层的法布里-珀罗装置相同的水平上。
5、如上述权利要求中任一项所述的法布里-珀罗装置，其特征在于，上述介质膜料包括有机聚合物，例如二甘醇双碳酸丙烯酯。
6、如权利要求1～4中任一项所述的法布里-珀罗装置，其特征在于，上述介质膜料包括冰晶石、氟化镁、氟化铈或它们的混合物。
7、如权利要求1～4中任一项所述的法布里-珀罗装置，其特征在于，上述介质膜料的折射率高于2.0。
8、如权利要求7所述的法布里-珀罗装置，其特征在于，上述介质膜料包括ZrO2、TiO2、Zns、ZnSe或它们的混合物。
9、如上述权利要求中任一项所述的法布里-珀罗装置，其特征在于，前述间隙中含有非线性光学聚合物。
10、如上述权利要求中任一项所述的法布里-珀罗装置，其特征在于，它可用作干涉仪。
11、如上述权利要求中任一项所述的法布里-珀罗装置，其特征在于，它可用作激光谐振腔。
12、如上述权利要求中任一项所述的法布里-珀罗装置，其特征在于，它可用作反射调制器或透射调制器。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP92201408.9 | 1992-05-19 | ||
| EP92201408 | 1992-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1079820A true CN1079820A (zh) | 1993-12-22 |
Family
ID=8210614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN93106209A Pending CN1079820A (zh) | 1992-05-19 | 1993-05-19 | 反射镜已涂膜的法布里-珀罗装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5381232A (zh) |
| JP (1) | JPH0690045A (zh) |
| KR (1) | KR930023745A (zh) |
| CN (1) | CN1079820A (zh) |
| CA (1) | CA2096455A1 (zh) |
| TW (1) | TW245772B (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100499409C (zh) * | 2002-11-07 | 2009-06-10 | 诺基亚西门子通信有限责任两合公司 | 针对角度调制的光学信号的接收机 |
| CN103547948A (zh) * | 2011-04-20 | 2014-01-29 | 密执安州立大学董事会 | 具有最小角度依赖性的用于可视显示器和成像的光谱滤光 |
| CN108919405A (zh) * | 2018-07-03 | 2018-11-30 | 深圳市融光纳米科技有限公司 | 角度不敏感反射滤光片 |
| CN109238437A (zh) * | 2018-08-28 | 2019-01-18 | 电子科技大学 | 一种基于氮化硅mems膜的光纤法珀声波探头 |
Families Citing this family (172)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7830587B2 (en) * | 1993-03-17 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with semiconductor substrate |
| US6674562B1 (en) | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
| US7460291B2 (en) * | 1994-05-05 | 2008-12-02 | Idc, Llc | Separable modulator |
| US20010003487A1 (en) * | 1996-11-05 | 2001-06-14 | Mark W. Miles | Visible spectrum modulator arrays |
| US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
| US7123216B1 (en) | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
| US8081369B2 (en) * | 1994-05-05 | 2011-12-20 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
| US7826120B2 (en) * | 1994-05-05 | 2010-11-02 | Qualcomm Mems Technologies, Inc. | Method and device for multi-color interferometric modulation |
| US7852545B2 (en) * | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
| US7776631B2 (en) | 1994-05-05 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | MEMS device and method of forming a MEMS device |
| US7738157B2 (en) | 1994-05-05 | 2010-06-15 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
| US7808694B2 (en) | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
| US7619810B2 (en) * | 1994-05-05 | 2009-11-17 | Idc, Llc | Systems and methods of testing micro-electromechanical devices |
| JP3047311B2 (ja) * | 1994-12-08 | 2000-05-29 | キヤノン株式会社 | 液晶表示装置 |
| US7898722B2 (en) * | 1995-05-01 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with restoring electrode |
| US7830588B2 (en) * | 1996-12-19 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method of making a light modulating display device and associated transistor circuitry and structures thereof |
| US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
| KR100703140B1 (ko) * | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | 간섭 변조기 및 그 제조 방법 |
| US6169604B1 (en) * | 1999-02-10 | 2001-01-02 | Avanex Corporation | Nonlinear interferometer for fiber optic dense wavelength division multiplexer utilizing a phase bias element to separate wavelengths in an optical signal |
| US6215926B1 (en) * | 1999-02-10 | 2001-04-10 | Avanex Corporation | Fiber optic dense wavelength division multiplexer with a phase differential method of wavelengths separation utilizing glass blocks and a nonlinear interferometer |
| WO2003007049A1 (en) | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
| FR2805052A1 (fr) * | 2000-02-14 | 2001-08-17 | Schlumberger Ind Sa | Filtre fabry-perot court a couches metalliques |
| US6665109B2 (en) | 2000-03-20 | 2003-12-16 | Np Photonics, Inc. | Compliant mechanism and method of forming same |
| US6597461B1 (en) | 2000-03-20 | 2003-07-22 | Parvenu, Inc. | Tunable fabry-perot interferometer using entropic materials |
| WO2001071277A1 (en) * | 2000-03-20 | 2001-09-27 | Solus Micro Technologies, Inc. | Electrostatically-actuated tunable optical components using entropic materials |
| US6747775B2 (en) * | 2000-03-20 | 2004-06-08 | Np Photonics, Inc. | Detunable Fabry-Perot interferometer and an add/drop multiplexer using the same |
| US6747784B2 (en) | 2000-03-20 | 2004-06-08 | Np Photonics, Inc. | Compliant mechanism and method of forming same |
| US6678084B2 (en) | 2000-03-20 | 2004-01-13 | Np Photonics, Inc. | Methods of making mechanisms in which relative locations of elements are maintained during manufacturing |
| US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
| US6574033B1 (en) | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
| US7781850B2 (en) * | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
| TW594360B (en) * | 2003-04-21 | 2004-06-21 | Prime View Int Corp Ltd | A method for fabricating an interference display cell |
| TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
| US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
| TW200506479A (en) * | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
| TWI231865B (en) * | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
| TWI232333B (en) * | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
| KR100532303B1 (ko) * | 2003-11-15 | 2005-11-29 | 삼성전자주식회사 | 다중 채널 광원과 그를 이용한 다중 채널 광모듈 |
| US7532194B2 (en) * | 2004-02-03 | 2009-05-12 | Idc, Llc | Driver voltage adjuster |
| US7706050B2 (en) * | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
| US7720148B2 (en) * | 2004-03-26 | 2010-05-18 | The Hong Kong University Of Science And Technology | Efficient multi-frame motion estimation for video compression |
| US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
| CN1323286C (zh) * | 2004-06-03 | 2007-06-27 | 中山大学 | 一种用于光纤传感的新型法布里－珀罗腔结构 |
| US7256922B2 (en) * | 2004-07-02 | 2007-08-14 | Idc, Llc | Interferometric modulators with thin film transistors |
| TWI233916B (en) * | 2004-07-09 | 2005-06-11 | Prime View Int Co Ltd | A structure of a micro electro mechanical system |
| KR101255691B1 (ko) * | 2004-07-29 | 2013-04-17 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법 |
| US7429334B2 (en) * | 2004-09-27 | 2008-09-30 | Idc, Llc | Methods of fabricating interferometric modulators by selectively removing a material |
| US7369296B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
| US7564612B2 (en) * | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
| US7893919B2 (en) * | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
| US7527995B2 (en) * | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
| US7630119B2 (en) * | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
| US7289259B2 (en) * | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
| US7944599B2 (en) * | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
| US7349136B2 (en) * | 2004-09-27 | 2008-03-25 | Idc, Llc | Method and device for a display having transparent components integrated therein |
| US7304784B2 (en) | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
| US7719500B2 (en) * | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
| US7302157B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
| US7372613B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
| US7405861B2 (en) * | 2004-09-27 | 2008-07-29 | Idc, Llc | Method and device for protecting interferometric modulators from electrostatic discharge |
| US7327510B2 (en) * | 2004-09-27 | 2008-02-05 | Idc, Llc | Process for modifying offset voltage characteristics of an interferometric modulator |
| US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
| US7554714B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Device and method for manipulation of thermal response in a modulator |
| US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
| US7492502B2 (en) * | 2004-09-27 | 2009-02-17 | Idc, Llc | Method of fabricating a free-standing microstructure |
| US7321456B2 (en) | 2004-09-27 | 2008-01-22 | Idc, Llc | Method and device for corner interferometric modulation |
| US20060065366A1 (en) * | 2004-09-27 | 2006-03-30 | Cummings William J | Portable etch chamber |
| US7161730B2 (en) | 2004-09-27 | 2007-01-09 | Idc, Llc | System and method for providing thermal compensation for an interferometric modulator display |
| US7813026B2 (en) * | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
| US7355780B2 (en) | 2004-09-27 | 2008-04-08 | Idc, Llc | System and method of illuminating interferometric modulators using backlighting |
| US7417783B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
| US7684104B2 (en) * | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
| US7130104B2 (en) | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
| US8008736B2 (en) * | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
| US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
| US7373026B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
| US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
| US20060067650A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
| US7612932B2 (en) * | 2004-09-27 | 2009-11-03 | Idc, Llc | Microelectromechanical device with optical function separated from mechanical and electrical function |
| US7936497B2 (en) * | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
| TW200628877A (en) * | 2005-02-04 | 2006-08-16 | Prime View Int Co Ltd | Method of manufacturing optical interference type color display |
| US7884989B2 (en) * | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
| US7460292B2 (en) * | 2005-06-03 | 2008-12-02 | Qualcomm Mems Technologies, Inc. | Interferometric modulator with internal polarization and drive method |
| EP1910216A1 (en) * | 2005-07-22 | 2008-04-16 | QUALCOMM Incorporated | Support structure for mems device and methods therefor |
| KR101423321B1 (ko) | 2005-07-22 | 2014-07-30 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 지지 구조물들을 가지는 전자기계 장치들 및 그 제조방법들 |
| EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
| KR20080068821A (ko) | 2005-09-30 | 2008-07-24 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Ｍｅｍｓ 장치 및 해당 장치용의 접속부 |
| US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
| DE102005052758A1 (de) * | 2005-11-04 | 2007-05-16 | Leica Microsystems | Substrathalterungseinrichtung zur Verwendung in einem Positionsmessgerät |
| US7795061B2 (en) * | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
| US7916980B2 (en) * | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
| US7382515B2 (en) * | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
| US7652814B2 (en) | 2006-01-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | MEMS device with integrated optical element |
| US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
| US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
| US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
| US7643203B2 (en) * | 2006-04-10 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Interferometric optical display system with broadband characteristics |
| US7417784B2 (en) * | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
| US7623287B2 (en) * | 2006-04-19 | 2009-11-24 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
| US20070249078A1 (en) * | 2006-04-19 | 2007-10-25 | Ming-Hau Tung | Non-planar surface structures and process for microelectromechanical systems |
| US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
| US7527996B2 (en) * | 2006-04-19 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
| US7369292B2 (en) * | 2006-05-03 | 2008-05-06 | Qualcomm Mems Technologies, Inc. | Electrode and interconnect materials for MEMS devices |
| US20070268201A1 (en) * | 2006-05-22 | 2007-11-22 | Sampsell Jeffrey B | Back-to-back displays |
| US7649671B2 (en) * | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
| US7405863B2 (en) * | 2006-06-01 | 2008-07-29 | Qualcomm Mems Technologies, Inc. | Patterning of mechanical layer in MEMS to reduce stresses at supports |
| US7835061B2 (en) * | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
| US7385744B2 (en) * | 2006-06-28 | 2008-06-10 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing MEMS device and methods for forming the same |
| US7527998B2 (en) * | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
| US7566664B2 (en) * | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
| US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
| US20080043315A1 (en) * | 2006-08-15 | 2008-02-21 | Cummings William J | High profile contacts for microelectromechanical systems |
| US7629197B2 (en) * | 2006-10-18 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Spatial light modulator |
| US7545552B2 (en) * | 2006-10-19 | 2009-06-09 | Qualcomm Mems Technologies, Inc. | Sacrificial spacer process and resultant structure for MEMS support structure |
| US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
| US7535621B2 (en) | 2006-12-27 | 2009-05-19 | Qualcomm Mems Technologies, Inc. | Aluminum fluoride films for microelectromechanical system applications |
| US8115987B2 (en) * | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
| US7733552B2 (en) * | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
| US7742220B2 (en) * | 2007-03-28 | 2010-06-22 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing conducting layers separated by stops |
| US7643202B2 (en) * | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
| US7715085B2 (en) * | 2007-05-09 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Electromechanical system having a dielectric movable membrane and a mirror |
| US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
| US7625825B2 (en) * | 2007-06-14 | 2009-12-01 | Qualcomm Mems Technologies, Inc. | Method of patterning mechanical layer for MEMS structures |
| US7643199B2 (en) * | 2007-06-19 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | High aperture-ratio top-reflective AM-iMod displays |
| US7782517B2 (en) * | 2007-06-21 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Infrared and dual mode displays |
| US7630121B2 (en) * | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
| US8068268B2 (en) * | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
| JP2010538306A (ja) | 2007-07-31 | 2010-12-09 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 干渉変調器の色ずれを高めるためのデバイス |
| US7570415B2 (en) * | 2007-08-07 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
| US8072402B2 (en) * | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
| US7773286B2 (en) * | 2007-09-14 | 2010-08-10 | Qualcomm Mems Technologies, Inc. | Periodic dimple array |
| US7847999B2 (en) * | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
| US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
| US8058549B2 (en) * | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
| EP2212926A2 (en) * | 2007-10-19 | 2010-08-04 | QUALCOMM MEMS Technologies, Inc. | Display with integrated photovoltaics |
| WO2009055393A1 (en) * | 2007-10-23 | 2009-04-30 | Qualcomm Mems Technologies, Inc. | Adjustably transmissive mems-based devices |
| US20090293955A1 (en) * | 2007-11-07 | 2009-12-03 | Qualcomm Incorporated | Photovoltaics with interferometric masks |
| US8941631B2 (en) * | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
| US7715079B2 (en) * | 2007-12-07 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | MEMS devices requiring no mechanical support |
| CN101999177A (zh) * | 2007-12-21 | 2011-03-30 | 高通Mems科技公司 | 多接面光伏电池 |
| US7863079B2 (en) | 2008-02-05 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Methods of reducing CD loss in a microelectromechanical device |
| US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
| US7944604B2 (en) * | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
| US7612933B2 (en) | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
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| JP5531832B2 (ja) * | 2010-07-06 | 2014-06-25 | セイコーエプソン株式会社 | 光フィルター、光フィルターモジュール、分光測定器および光機器 |
| JP2013544370A (ja) | 2010-08-17 | 2013-12-12 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 干渉ディスプレイデバイスの電荷中性電極の作動及び較正 |
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| US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
| US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
| US9547107B2 (en) | 2013-03-15 | 2017-01-17 | The Regents Of The University Of Michigan | Dye and pigment-free structural colors and angle-insensitive spectrum filters |
| FI128101B (fi) | 2017-07-03 | 2019-09-30 | Teknologian Tutkimuskeskus Vtt Oy | Mikrosysteemi (MEMS) Fabry–Perot-interferometri, laitteisto ja menetelmä Fabry–Perot-interferometrin valmistamiseksi |
| PL234749B1 (pl) * | 2017-10-04 | 2020-03-31 | Politechnika Gdanska | Głowica do pomiaru temperatury elementów elektronicznych |
| MX2019002665A (es) * | 2018-03-14 | 2019-09-16 | Viavi Solutions Inc | Metodo sin solvente para fabricar dispositivos de pelicula delgada. |
| EP3650833A1 (en) | 2018-11-09 | 2020-05-13 | Technische Universität München | Multicolor optical resonator for imaging methods |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400058A (en) * | 1980-06-16 | 1983-08-23 | Honeywell Inc. | Tunable Fabry-Perot filter |
| GB2082380A (en) * | 1980-08-18 | 1982-03-03 | Standard Telephones Cables Ltd | Injection laser |
| GB8621439D0 (en) * | 1986-09-05 | 1986-10-15 | Secr Defence | Electro-optic device |
| US4959448A (en) * | 1988-07-04 | 1990-09-25 | Akzo N.V. | Liquid crystalline side-chain polyesters prepared by polycondensation reactions |
| EP0358476B1 (en) * | 1988-09-08 | 1998-07-22 | Akzo Nobel N.V. | Integrated optic components |
| FR2636634B1 (fr) * | 1988-09-16 | 1992-11-27 | Rhone Poulenc Chimie | Polyurethannes, actifs en optique non lineaire et materiaux les contenant, dispositif optique les contenant et procedes de fabrication de ces composes et materiaux |
| JPH02146526A (ja) * | 1988-11-29 | 1990-06-05 | Seiko Instr Inc | 液晶素子 |
| US4957655A (en) * | 1989-01-12 | 1990-09-18 | Hoechst Celanese Corp. | Copolymeric nonlinear optical media |
| DE69103555T2 (de) * | 1990-03-06 | 1995-03-02 | Akzo Nobel Nv | Wärmehärtbares NLO-System und darauf basierende integrale optische Komponenten. |
-
1993
- 1993-05-13 TW TW082103748A patent/TW245772B/zh active
- 1993-05-18 CA CA002096455A patent/CA2096455A1/en not_active Abandoned
- 1993-05-18 US US08/063,591 patent/US5381232A/en not_active Expired - Fee Related
- 1993-05-19 KR KR1019930008763A patent/KR930023745A/ko not_active Application Discontinuation
- 1993-05-19 CN CN93106209A patent/CN1079820A/zh active Pending
- 1993-05-19 JP JP5139173A patent/JPH0690045A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100499409C (zh) * | 2002-11-07 | 2009-06-10 | 诺基亚西门子通信有限责任两合公司 | 针对角度调制的光学信号的接收机 |
| CN103547948A (zh) * | 2011-04-20 | 2014-01-29 | 密执安州立大学董事会 | 具有最小角度依赖性的用于可视显示器和成像的光谱滤光 |
| CN108919405A (zh) * | 2018-07-03 | 2018-11-30 | 深圳市融光纳米科技有限公司 | 角度不敏感反射滤光片 |
| CN109238437A (zh) * | 2018-08-28 | 2019-01-18 | 电子科技大学 | 一种基于氮化硅mems膜的光纤法珀声波探头 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW245772B (zh) | 1995-04-21 |
| CA2096455A1 (en) | 1993-11-20 |
| KR930023745A (ko) | 1993-12-21 |
| JPH0690045A (ja) | 1994-03-29 |
| US5381232A (en) | 1995-01-10 |
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