CN106684205A - Anti-reflection coating for multi-junction solar cell and preparation method thereof - Google Patents
Anti-reflection coating for multi-junction solar cell and preparation method thereof Download PDFInfo
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- CN106684205A CN106684205A CN201510744419.2A CN201510744419A CN106684205A CN 106684205 A CN106684205 A CN 106684205A CN 201510744419 A CN201510744419 A CN 201510744419A CN 106684205 A CN106684205 A CN 106684205A
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- Prior art keywords
- solar cell
- antireflective coating
- multijunction solar
- deposition
- preparation
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000000576 coating method Methods 0.000 title abstract description 15
- 239000011248 coating agent Substances 0.000 title abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 12
- 238000002310 reflectometry Methods 0.000 claims abstract description 8
- 239000002356 single layer Substances 0.000 claims abstract description 5
- 239000006117 anti-reflective coating Substances 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 16
- 238000004062 sedimentation Methods 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 13
- 238000001228 spectrum Methods 0.000 description 10
- 238000011161 development Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an anti-reflection coating for a multi-junction solar cell and a preparation method thereof. The preparation method of the anti-reflection coating for the multi-junction solar cell provided by the invention comprises the following steps: I, selecting materials to perform single-layer deposition, and acquiring relations between a deposition incidence angle and a deposition rate under corresponding deposition conditions; and II, measuring optical parameters of single-layer coatings obtained in the step I, acquiring corresponding relations among the deposition incidence angle, the deposition rate and the optical parameters under corresponding deposition conditions, designing an anti-reflection coating structure through a simulation program, and optimizing the thicknesses of the layers, so that the average reflectivity of the whole anti-reflection coating is minimum within the range of 300 to 1,700nm under a determined total thickness and deposition conditions. The reflectivity of the anti-reflection coating for the multi-junction solar cell provided by the invention is less than 0.25 percent within the range of 300 to 1,700nm.
Description
Technical field
The present invention relates to a kind of method of multijunction solar cell technical field, and in particular to a kind of to can be applicable to multilayer gradually changeable wide spectrum dimmer reflecting film of multijunction solar cell and preparation method thereof.
Background technology
With the development of solar cell technology, efficient realization needs more effectively to utilize spectrum using more multijunction solar cell, therefore it is required that the effective range of antireflective coating widens 300-1700nm, to ensure the effective absorption to light.Three junction batteries are currently being widely used using the control reflection of simple double layer antireflection coating, and the antireflecting realization of broader spectrum, multi-layer film structure must be adopted, form the antireflective coating system of refractive index gradient change, reflectivity of the battery surface to light further could be reduced in the range of 300nm-1700nm, to ensure to effective absorption of light and between sub- battery currents match.
The wide spectrum dimmer reflecting film research to being adapted to multijunction solar cell domestic at present is near barren.And the development of external multijunction solar cell is very early, the Emcore companies and Spectrolab companies in the U.S. etc. report four knots, five the knots even solar cell of six knots in succession, the more traditional three-junction solar battery of efficiency has very big breakthrough, therefore, foreign countries also have accordingly been more in-depth study to antireflective coating.The patent of Lucas Alves et al.《Antireflection Coating for Multi-junction Solar Cells》（US 2011/0232745 A1）In be just reported on three-junction solar battery and obtained the antireflective coating of average reflectance in the range of 300-1850nm less than 5%.
In terms of the antireflective film development of multijunction cell, the country is presently mainly that the antireflective coating structure in three junction batteries is grafted directly on four-junction solar battery, but effective absorption of the currents match and light being to ensure that between each sub- battery is accomplished by introducing multi-layer film structure.The present invention solves emphatically the wide spectrum dimmer reflecting film Discussion On Development in multijunction solar cell.
The content of the invention
The problem that the present invention is solved is to provide a kind of wide spectrum gradually changeable multijunction solar cell antireflective coating, improves the absorption to light；To solve the problem, the present invention provides a kind of multijunction solar cell wide spectrum gradually changeable antireflective coating and preparation method thereof.
Multijunction solar cell antireflective coating preparation method provided by the present invention, including：
Step one, selection material carry out respectively monolayer deposition；Under obtaining correspondence sedimentary condition, the relation of incidence angle and sedimentation rate is deposited；
The optical parametric of each monofilm that step 2, measuring process one are obtained, obtains under correspondence sedimentary condition, deposition incidence angle, sedimentation rate, the corresponding relation of optical parametric；By testing simulator antireflective coating structure, optimize each thickness degree so that it is determined that under gross thickness and sedimentary condition, the average reflectance for entirely subtracting transmitting film is minimum in the range of 300 ~ 1700nm.
Further, also include：The thickness of each monofilm is measured, and compared with depositing and setting thickness, obtains deposit thickness error.
Further, the optical parametric of each monofilm is measured using ellipsometer test.
Further, the refractive index of described antireflective coating is successively successively decreased from substrate to air layer.
Further, when the sedimentary condition of the antireflective coating is the optical parametric of correspondence each monofilm, obtain under correspondence sedimentary condition, deposition incidence angle, sedimentation rate.
Multijunction solar cell antireflective coating provided by the present invention, including：Substrate is multijunction solar cell, and the number of plies of antireflective coating and the thickness per layer material are drawn by testing simulator, relevant with the structure of multijunction solar cell.
Further, the reflectivity of the multijunction solar cell antireflective coating is less than 0.25% in 300 ~ 1700 wave-length coverage.
Advantages of the present invention includes：
Under setting up correspondence sedimentary condition, deposition incidence angle, sedimentation rate, the corresponding relation of optical parametric are optimized by simulated program, so as to obtain the multijunction solar cell antireflective coating structure and the preparation technology that optimize；Experimental result less than 0.25% by the reflectivity of antireflective coating provided by the present invention it has been proved that can meet AEROSPACE APPLICATION demand.
Description of the drawings
Fig. 1 is the preparation method flow chart of multijunction solar cell wide spectrum dimmer reflecting film；
Fig. 2 is the positional structure schematic diagram of four junction batteries that the embodiment of the present invention is provided and antireflective coating；
Fig. 3 is the reflection spectrogram for being applied to antireflective coating on four-junction solar battery of design in present example.
Specific embodiment
Referring to the accompanying drawing for illustrating the embodiment of the present invention, the present invention is described in more detail.However, the present invention can be realized in many different forms, and should not be construed as and limited by the embodiment for herein proposing.Conversely, proposing that these embodiments are, in order to reach fully and complete disclosure, and to make those skilled in the art understand the scope of the present invention completely.
The present embodiment specifically includes following steps, as shown in Figure 1：
Step one, selection Coating Materials carry out respectively monolayer deposition；Under obtaining correspondence sedimentary condition, the relation of incidence angle and sedimentation rate is deposited；The Coating Materials can select the conventional material for solar cell reflectance coating, such as TiO2 、SiO2、Al2O3Deng.
The optical parametric of each monofilm that step 2, measuring process one are obtained, obtains under correspondence sedimentary condition, deposition incidence angle, sedimentation rate, the corresponding relation of optical parametric；By testing simulator antireflective coating structure, optimize each thickness degree so that it is determined that under gross thickness and sedimentary condition, the average reflectance for entirely subtracting transmitting film is minimum in the range of 300 ~ 1700nm.
Optical parametric refers to reflectivity n and extinction coefficient k.
Step 3, according to the optimum structure of testing simulator, and the relation of the refractive index of coating materials deposition incidence angle and Coating Materials, material that will be required loads on coating machine, adjusts per layer of deposition incident angle of control, is sequentially depositing every layer material.
In a preferred embodiment of the invention, also include, measure the thickness of each monofilm, and compared with depositing and setting thickness, obtain deposit thickness error, so as to the impact for eliminating deposit thickness error as far as possible when multijunction solar cell wide spectrum dimmer reflecting film is deposited.
In the present embodiment, the optical parametric of each monofilm is measured using ellipsometer test, ellipsometer test has the advantages that measurement is accurate, quick, do not destroy film.
In a preferred embodiment, the refractive index of multijunction solar cell wide spectrum dimmer reflecting film is successively successively decreased from substrate to air layer, the advantage of such film structure is due to the restriction of optical film materials species, preferably membrane system refractive index successively decreases relatively difficult to achieve, and the gradually changeable antireflective coating in this patent can be directly realized by the membrane system that preferable refractive index is successively decreased.Simultaneously, it is to avoid the successive sedimentation of the different optical thin film of various properties brings great process complexity.
During by the sedimentary condition corresponding to the optimization membrane system that the present invention is obtained to be the optical parametric of each monofilm of correspondence described in step one, obtain under correspondence sedimentary condition, deposition incidence angle, sedimentation rate.
Fig. 2 is the positional structure schematic diagram of four junction batteries that the embodiment of the present invention is provided and antireflective coating,
The antireflective coating includes：
Substrate is multijunction solar cell, and the number of plies of antireflective coating and the thickness per layer material are drawn by testing simulator, relevant with the structure of multijunction solar cell.
Further, the reflectivity of the multijunction solar cell antireflective coating is less than 0.25% in 300 ~ 1700 wave-length coverage.
Although the present invention is disclosed as above with preferred embodiment; but it is not for limiting the present invention; any those skilled in the art are without departing from the spirit and scope of the present invention; the methods and techniques content that may be by the disclosure above makes possible variation and modification to technical solution of the present invention; therefore; every content without departing from technical solution of the present invention; according to any simple modification, equivalent variations and modification that the technical spirit of the present invention is made to above example, the protection domain of technical solution of the present invention is belonged to.
Claims (7)
1. a kind of multijunction solar cell antireflective coating preparation method, it is characterised in that include：
Step one, selection material carry out respectively monolayer deposition；Under obtaining correspondence sedimentary condition, the relation of incidence angle and sedimentation rate is deposited；
The optical parametric of each monofilm that step 2, measuring process one are obtained, obtains under correspondence sedimentary condition, deposition incidence angle, sedimentation rate, the corresponding relation of optical parametric；By testing simulator antireflective coating structure, optimize each thickness degree so that it is determined that under gross thickness and sedimentary condition, the average reflectance for entirely subtracting transmitting film is minimum in the range of 300 ~ 1700nm.
2. according to the multijunction solar cell antireflective coating preparation method described in claim 1, it is characterised in that also include：The thickness of each monofilm is measured, and compared with depositing and setting thickness, obtains deposit thickness error.
3. according to the multijunction solar cell antireflective coating preparation method described in claim 1, it is characterised in that measure the optical parametric of each monofilm using ellipsometer test.
4. according to the multijunction solar cell antireflective coating preparation method described in claim 1, it is characterised in that the refractive index of described antireflective coating is successively successively decreased from substrate to air layer.
5., according to the multijunction solar cell antireflective coating preparation method described in claim 1, it is characterised in that when the sedimentary condition of the antireflective coating is the optical parametric of correspondence each monofilm, obtain under correspondence sedimentary condition, deposition incidence angle, sedimentation rate.
6. the multijunction solar cell antireflective coating prepared by the multijunction solar cell antireflective coating preparation method in claim 1 to 5 described in any one, it is characterised in that include：Substrate is multijunction solar cell, and the number of plies of antireflective coating and the thickness per layer material are drawn by testing simulator, relevant with the structure of multijunction solar cell.
7. according to the multijunction solar cell antireflective coating described in claim 6, it is characterised in that the reflectivity of the multijunction solar cell antireflective coating is less than 0.25% in 300 ~ 1700 wave-length coverage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510744419.2A CN106684205B (en) | 2015-11-06 | 2015-11-06 | A kind of multijunction solar cell antireflective coating and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510744419.2A CN106684205B (en) | 2015-11-06 | 2015-11-06 | A kind of multijunction solar cell antireflective coating and preparation method thereof |
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| CN106684205A true CN106684205A (en) | 2017-05-17 |
| CN106684205B CN106684205B (en) | 2018-05-29 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6096371A (en) * | 1997-01-27 | 2000-08-01 | Haaland; Peter D. | Methods and apparatus for reducing reflection from optical substrates |
| CN102723370A (en) * | 2012-06-18 | 2012-10-10 | 湖南红太阳光电科技有限公司 | Wide spectrum multilayered antireflection passivation film for solar cell |
| CN102928894A (en) * | 2012-11-26 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing reflection-reduction film element of light P with thickness of 193nm in large angle mode |
| CN102983226A (en) * | 2012-12-14 | 2013-03-20 | 上海空间电源研究所 | Wide spectral antireflective film for multi-junction solar cell and fabrication method of antireflective film |
| CN104992986A (en) * | 2015-06-09 | 2015-10-21 | 同济大学 | Wide-spectrum antireflection film for multi-junction solar cells based on sol-gel technology |
-
2015
- 2015-11-06 CN CN201510744419.2A patent/CN106684205B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6096371A (en) * | 1997-01-27 | 2000-08-01 | Haaland; Peter D. | Methods and apparatus for reducing reflection from optical substrates |
| CN102723370A (en) * | 2012-06-18 | 2012-10-10 | 湖南红太阳光电科技有限公司 | Wide spectrum multilayered antireflection passivation film for solar cell |
| CN102928894A (en) * | 2012-11-26 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing reflection-reduction film element of light P with thickness of 193nm in large angle mode |
| CN102983226A (en) * | 2012-12-14 | 2013-03-20 | 上海空间电源研究所 | Wide spectral antireflective film for multi-junction solar cell and fabrication method of antireflective film |
| CN104992986A (en) * | 2015-06-09 | 2015-10-21 | 同济大学 | Wide-spectrum antireflection film for multi-junction solar cells based on sol-gel technology |
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| CN106684205B (en) | 2018-05-29 |
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