CN106356273A - Ion-injection Instant manufacturing control system and method - Google Patents
Ion-injection Instant manufacturing control system and method Download PDFInfo
- Publication number
- CN106356273A CN106356273A CN201611028746.9A CN201611028746A CN106356273A CN 106356273 A CN106356273 A CN 106356273A CN 201611028746 A CN201611028746 A CN 201611028746A CN 106356273 A CN106356273 A CN 106356273A
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- Prior art keywords
- wafer
- ion
- injection region
- heat wave
- region part
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
Abstract
The invention provides an ion-injection Instant manufacturing control system and method. The system comprises a wafer loading region conveying part, an injection region part, a thermal wave measuring region part and a data feedback calculating part, wherein the wafer loading region conveying part is used for transferring a wafer into the injection region part, the injection region part is used for executing ion beam regulation and executing ion injection treatment on the wafer; the thermal wave measuring region part is used for executing thermal wave measurement on the wafer before the wafer is transferred back to the wafer loading region conveying part after the ion beam regulation and transferring thermal wave measurement data to the data feedback calculating part; and the data feedback calculating part is used for judging whether current ion beams need to be regulated according to the thermal wave measurement data and controlling the ion beam regulation of the injection region part according to a judgment result.
Description
Technical field
The present invention relates to field of semiconductor manufacture is and in particular to ion implanting automation field；And more specifically,
The present invention relates to a kind of instant manufacturing control system of ion implanting and ion implanting manufacture control method immediately.
Background technology
Ion implanting, as semiconductor manufacturing main technique, injects the problem that stability control is always inquired in the industry.Right
In ion implanting monitoring, the method generally using " periodically board is done with point inspection under line " at present to observe board in a period of time
Process stabilizing.Measuring method has Square resistance measurement method and heat wave method for measurement.The former belongs to destructive measurement, ageing not
By force；And the latter then will not produce to wafer and damage, and there is stronger real-time.
For existing ion implanting monitoring method, its subject matter be the above monitoring method belong to " find afterwards,
Remedy afterwards ", lack the immediately monitoring to ion implanting.When board itself is to injection parameter monitors failure, " sensing such as occurs
Situations such as device failure ", the various risks such as technological parameter drift can be led to.It is thus desirable to increasing third party real-time sampling data guest
See reflection injection state, and as ion implanting is controlled with the reference of adjustment, reach the purpose maintaining injection stability.
Content of the invention
The technical problem to be solved is that there is drawbacks described above in prior art, provides one kind to be capable of
The instant manufacturing control system of ion implanting of monitor in real time and ion implanting manufacture control method immediately.
In order to realize above-mentioned technical purpose, according to the present invention, there is provided a kind of instant manufacturing control system of ion implanting, bag
Include: wafer load area translator unit, injection region part, heat wave measure region part and data feedback calculating section；Wherein,
Wafer load area translator unit is used for for wafer being transferred to injection region part, and injection region part is used for executing ion beam adjustment right
Wafer execution ion implanting is processed；Heat wave measures wafer after ion implanted process for the region part and is passed back to wafer load area
Before translator unit, heat wave measurement is carried out to the wafer after ion implanted process, and heat wave metric data is passed to data
Feedback computing section；Data feedback calculating section is used for judging current ion beam the need of adjustment according to heat wave metric data,
And control the ion beam adjustment of injection region part according to judged result.
Preferably, included according to the ion beam adjustment that judged result controls injection region part: if it is judged that comprise
Value of feedback is in default specification requirement, then injection region part continues executing with current ion implanting and processes.
Preferably, included according to the ion beam adjustment that judged result controls injection region part: if it is judged that comprise
Value of feedback is not in default specification requirement, then partial interruption current ion implanting in injection region is processed, then carries out line adjustment.
Preferably, heat wave measurement region part enters line number in position at the three of the surface of the wafer after ion implanted process
According to sampling to carry out heat wave measurement.
In order to realize above-mentioned technical purpose, according to the present invention, additionally provide a kind of ion implanting and immediately manufacture control method,
Including:
First step: wafer is transferred to injection region part by wafer load area translator unit；
Second step: injection region is partly processed to wafer execution ion implanting；
Third step: heat wave measures region and partly carries out heat wave measurement to the wafer after ion implanted process, and will
Heat wave metric data passes to data feedback calculating section；
Four steps: data feedback calculating section is used for judging current ion beam the need of tune according to heat wave metric data
Whole；
5th step: the wafer after ion implanted process is passed back to wafer load area translator unit；
6th step: control the ion beam adjustment of injection region part according to judged result.
Preferably, included according to the ion beam adjustment that judged result controls injection region part: if it is judged that comprise
Value of feedback is in default specification requirement, then injection region part continues executing with current ion implanting and processes.
Preferably, included according to the ion beam adjustment that judged result controls injection region part: if it is judged that comprise
Value of feedback is not in default specification requirement, then partial interruption current ion implanting in injection region is processed, then carries out line adjustment.
Preferably, heat wave measurement region part enters line number in position at the three of the surface of the wafer after ion implanted process
According to sampling to carry out heat wave measurement.
Thus, the invention provides a kind of semi-conductor manufacturing system and method, coupled ion injection parameter and crystal column surface
The dependency of damage degree, is measured by heat wave and obtains injecting staining effect under different situations, crystal column surface characteristic variations of sampling, instead
Feed out injection stability and accuracy, and then be according to adjustment is optimized to ion beam according to this, reduce to inject and fluctuate, carry
The purpose of high product yield.
Brief description
In conjunction with accompanying drawing, and by reference to detailed description below, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features are more easily understood, wherein:
Fig. 1 schematically shows the overall of the instant manufacturing control system of ion implanting according to the preferred embodiment of the invention
Schematic diagram.
Fig. 2 schematically shows the flow process that ion implanting according to the preferred embodiment of the invention manufactures control method immediately
Figure.
It should be noted that accompanying drawing is used for the present invention is described, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.And, in accompanying drawing, same or like element indicates same or like label.
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings in the present invention
Appearance is described in detail.
The invention provides a kind of semi-conductor manufacturing system and method, coupled ion injection parameter and crystal column surface damage degree
Dependency, by heat wave measure obtain under different situations inject staining effect, sample crystal column surface characteristic variations, feed back note
Enter stability and accuracy, and then be according to adjustment is optimized to ion beam according to this, reduce and inject fluctuation, raising product
The purpose of yield.
The specific embodiment of the present invention is described below.
Fig. 1 schematically shows the overall of the instant manufacturing control system of ion implanting according to the preferred embodiment of the invention
Schematic diagram.
Specifically, as shown in figure 1, the instant manufacturing control system of ion implanting according to the preferred embodiment of the invention includes:
Wafer load area translator unit 100, injection region part 200, heat wave measure region part 300 and data feedback calculating section
400；Wherein, wafer load area translator unit 100 is used for for wafer 22 being transferred to injection region part 200, and injection region part 200 is used
Process in execution ion beam adjustment 21 and to wafer 22 execution ion implanting；Heat wave measures region part 300 ion implanted
Wafer 22 after process carries out heat to the wafer 22 after ion implanted process before being passed back to wafer load area translator unit 100
Ripple measures, and heat wave metric data is passed to data feedback calculating section 400；Data feedback calculating section 400 is used for root
Judge current ion beam the need of adjustment according to heat wave metric data, and injection region part 200 is controlled according to judged result
Ion beam adjustment 21.
And, specifically, for example, included according to the ion beam adjustment 21 that judged result controls injection region part 200: if
The value of feedback that judged result comprises is in default specification requirement, then injection region part 200 continues executing with current ion implanting
Reason.Otherwise, if it is judged that the value of feedback comprising is not in default specification requirement, then injection region part 200 is interrupted currently
Ion implanting is processed, then carries out line adjustment.
Preferably, heat wave measures region part 300 position at the three of the surface of the wafer 22 after ion implanted process
Carry out data sampling to carry out heat wave measurement.
Fig. 2 schematically shows the flow process that ion implanting according to the preferred embodiment of the invention manufactures control method immediately
Figure.
Specifically, as shown in Fig. 2 ion implanting according to the preferred embodiment of the invention manufactures control method immediately includes:
First step s1: wafer 22 is transferred to injection region part 200 by wafer load area translator unit 100；
Second step s2: injection region part 200 is processed to wafer 22 execution ion implanting；
Third step s3: heat wave measures region part 300 and carries out heat wave measurement to the wafer 22 after ion implanted process,
And heat wave metric data is passed to data feedback calculating section 400；
Four steps s4: data feedback calculating section 400 is used for whether judging current ion beam according to heat wave metric data
Need to adjust；
5th step s5: the wafer 22 after ion implanted process is passed back to wafer load area translator unit 100；
6th step s6: control the ion beam adjustment 21 of injection region part 200 according to judged result.
Similarly, specifically, for example, included according to the ion beam adjustment 21 that judged result controls injection region part 200: such as
The value of feedback that fruit judged result comprises is in default specification requirement, then injection region part 200 continues executing with current ion implanting
Process.Otherwise, if it is judged that the value of feedback comprising is not in default specification requirement, then injection region part 200 interrupts working as
Front ion implanting is processed, then carries out line adjustment.
Similarly it is preferable that heat wave measures the three of the surface of wafer 22 after ion implanted process for the region part 300
Place position carries out data sampling to carry out heat wave measurement.
The monitoring scheme invention applies board sensor and wafer measurement feedback system merge, ion beam current is controlled
Compared with the range of minor swing, improve repetition stability and the reliability of ion implanting.In guarantee wafer (within wafer,
Wiw) while uniformity, meet the rigors of the high duplication in wafer, be finally reached reduction process fluctuation, improve
The purpose of product yield.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " 3rd " etc. describes each assembly being used only in differentiation description, element, step etc., rather than is used for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
The technology contents that the disclosure above all can be utilized are made many possible variations and modification, or are revised as to technical solution of the present invention
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
Interior.
And it should also be understood that the present invention is not limited to specific method described herein, compound, material, system
Make technology, usage and application, they can change.It should also be understood that term described herein be used merely to describe specific
Embodiment, rather than be used for limiting the scope of the present invention.Must be noted that herein and claims used in
Singulative " one ", " a kind of " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
As the citation of " element " meaned with the citation to one or more elements, and including known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
Multiple steps or the citation of device, and potentially include secondary step and second unit.Should be managed with broadest implication
All conjunctions that solution uses.Therefore, word "or" should be understood that the definition with logical "or", rather than logical exclusive-OR
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of this structure
Equivalent.Can be interpreted that approximate language should be understood like that, unless context explicitly indicates that contrary.
And, the method for the embodiment of the present invention and/or the realization of system may include manual, automatic or execute selected in combination
Task.And, the real instrument of the embodiment of the method according to the invention and/or system and equipment, available operating system is led to
Cross hardware, software or a combination thereof and realize several selected tasks.
Claims (8)
1. a kind of instant manufacturing control system of ion implanting is it is characterised in that include: wafer load area translator unit, injection region portion
Divide, heat wave measures region part and data feedback calculating section；Wherein, wafer load area translator unit is used for passing wafer
It is handed to injection region part, injection region part is used for executing ion beam adjustment and wafer execution ion implanting being processed；Heat wave measures
Region part is before the wafer after ion implanted process is passed back to wafer load area translator unit to ion implanted process
Wafer afterwards carries out heat wave measurement, and heat wave metric data is passed to data feedback calculating section；Data feedback calculating part
Divide for current ion beam is judged the need of adjustment according to heat wave metric data, and injection region portion is controlled according to judged result
The ion beam adjustment dividing.
2. the instant manufacturing control system of ion implanting according to claim 1 is it is characterised in that according to judged result control
The ion beam adjustment of injection region part includes: if it is judged that the value of feedback comprising is in default specification requirement, then injects
Area's part continues executing with current ion implanting and processes.
3. the instant manufacturing control system of ion implanting according to claim 1 and 2 is it is characterised in that according to judged result
The ion beam adjustment controlling injection region part includes: if it is judged that the value of feedback comprising is not in default specification requirement,
Then partial interruption current ion implanting in injection region is processed, then carries out line adjustment.
4. the instant manufacturing control system of ion implanting according to claim 1 and 2 is it is characterised in that heat wave measures region
Part carries out data sampling to carry out heat wave measurement in position at the three of the surface of the wafer after ion implanted process.
5. a kind of ion implanting manufactures control method immediately it is characterised in that including:
First step: wafer load area translator unit is used for for wafer being transferred to injection region part；
Second step: injection region is partly processed to wafer execution ion implanting；
Third step: heat wave measures region and partly carries out heat wave measurement to the wafer after ion implanted process, and by heat wave
Metric data passes to data feedback calculating section；
Four steps: data feedback calculating section is used for judging current ion beam the need of adjustment according to heat wave metric data；
5th step: the wafer after ion implanted process is passed back to wafer load area translator unit；
6th step: control the ion beam adjustment of injection region part according to judged result.
6. ion implanting according to claim 5 manufactures control method immediately it is characterised in that according to judged result control
The ion beam adjustment of injection region part includes: if it is judged that the value of feedback comprising is in default specification requirement, then injects
Area's part continues executing with current ion implanting and processes.
7. the ion implanting according to claim 5 or 6 manufactures control method immediately it is characterised in that according to judged result
The ion beam adjustment controlling injection region part includes: if it is judged that the value of feedback comprising is not in default specification requirement,
Then partial interruption current ion implanting in injection region is processed, then carries out line adjustment.
8. the ion implanting according to claim 5 or 6 manufactures control method immediately it is characterised in that heat wave measures region
Part carries out data sampling to carry out heat wave measurement in position at the three of the surface of the wafer after ion implanted process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611028746.9A CN106356273A (en) | 2016-11-18 | 2016-11-18 | Ion-injection Instant manufacturing control system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611028746.9A CN106356273A (en) | 2016-11-18 | 2016-11-18 | Ion-injection Instant manufacturing control system and method |
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| Publication Number | Publication Date |
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| CN106356273A true CN106356273A (en) | 2017-01-25 |
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ID=57862128
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611028746.9A Pending CN106356273A (en) | 2016-11-18 | 2016-11-18 | Ion-injection Instant manufacturing control system and method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054122A (en) * | 2017-12-15 | 2018-05-18 | 武汉新芯集成电路制造有限公司 | A kind of means to save the situation lost after ion implanting wafer record |
| CN111312586A (en) * | 2020-02-20 | 2020-06-19 | 全球能源互联网研究院有限公司 | Method for improving p-type doped ion implantation accuracy |
| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
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| US20040099818A1 (en) * | 2002-11-26 | 2004-05-27 | Jun Chung-Sam | Method for monitoring an ion implanter and ion implanter having a shadow jig for performing the same |
| US20050142672A1 (en) * | 2003-12-26 | 2005-06-30 | Mosel Vitelic, Inc. | Method for monitoring an ion implanter |
| CN102751209A (en) * | 2011-04-17 | 2012-10-24 | 中国科学院微电子研究所 | Method for monitoring ion implantation tool |
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| CN103882401A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Method for monitoring low temperature ion injection |
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|---|---|---|---|---|
| US6136613A (en) * | 1998-04-21 | 2000-10-24 | United Silicon Incorporated | Method for recycling monitoring control wafers |
| US20040099818A1 (en) * | 2002-11-26 | 2004-05-27 | Jun Chung-Sam | Method for monitoring an ion implanter and ion implanter having a shadow jig for performing the same |
| US20050142672A1 (en) * | 2003-12-26 | 2005-06-30 | Mosel Vitelic, Inc. | Method for monitoring an ion implanter |
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| CN103882401A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Method for monitoring low temperature ion injection |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054122A (en) * | 2017-12-15 | 2018-05-18 | 武汉新芯集成电路制造有限公司 | A kind of means to save the situation lost after ion implanting wafer record |
| CN108054122B (en) * | 2017-12-15 | 2020-05-12 | 武汉新芯集成电路制造有限公司 | Remediation method for lost ion implanted wafer record |
| CN111312586A (en) * | 2020-02-20 | 2020-06-19 | 全球能源互联网研究院有限公司 | Method for improving p-type doped ion implantation accuracy |
| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
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Application publication date: 20170125 |