CN106298415A - A kind of governance structure of ion implantation apparatus vertical direction implant angle - Google Patents
A kind of governance structure of ion implantation apparatus vertical direction implant angle Download PDFInfo
- Publication number
- CN106298415A CN106298415A CN201610889586.0A CN201610889586A CN106298415A CN 106298415 A CN106298415 A CN 106298415A CN 201610889586 A CN201610889586 A CN 201610889586A CN 106298415 A CN106298415 A CN 106298415A
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- China
- Prior art keywords
- ion implantation
- implantation apparatus
- vertical direction
- faraday
- implant angle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
Abstract
The present invention relates to technical field of manufacturing semiconductors, particularly relate to the governance structure of a kind of ion implantation apparatus vertical direction implant angle, by being rotatably mounted a faraday including some palisade graphite-structures in the tail end in the technological reaction chamber of ion implantation apparatus, and it is respectively provided with gap between adjacent described palisade graphite-structure, and it is provided with opening in the framework at correspondence gap so that part ion can pass faraday by this gap and opening, so that when ion implantation apparatus vertical direction implant angle is measured, can be according to the implant angle of the acquiring size ion implantation apparatus vertical direction of the angle of Faraday rotation and electric current, and then can the implant angle of effective management and control ion implantation apparatus vertical direction, improve the yield of product.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of ion implantation apparatus vertical direction implant angle
Governance structure.
Background technology
Ion implantation apparatus is the key equipment before IC manufacturing in operation, ion implanting be to semiconductor surface near
The technology that region is doped, its objective is to change carrier concentration and the conduction type of quasiconductor.Ion implanting and routine heat
Doping process is compared and can be accurately controlled the aspects such as implantation dosage, implant angle, the injection degree of depth, horizontal proliferation, overcomes
The restriction of common process, improves the integrated level of circuit, opening speed, yield rate and life-span, reduces cost and power consumption.From
Sub-implanter is widely used in doping process, can meet the requirements such as shallow junction, low temperature and accurate control, it has also become IC manufacturing
Requisite critical equipment in technique.
For semiconductor product, middle line ion implantation apparatus is (particularly relevant to cut-in voltage at ion implantation process
Ion implantation process (BL POCKET IMP)) in product cut-in voltage (Breakdown voltage, be called for short BV) is had directly
Impact, and the implant angle that middle line ion implantation apparatus is in ion implantation process is also the parameter of non-the normally off key (key), can be straight
Connect cut-in voltage and the product yield having influence on device.And current, the middle line ion implantation apparatus in semicon industry can only be right
The angle in the X-Tilt angle(X direction of wafer (wafer) during injection), the angle in Y-Tilt angle(Y direction) and
Twist angle(windup-degree) carry out management and control, and for implant angle (the beam vertical of line vertical direction
There is disappearance in management and control angle), is extremely unfavorable for the lifting of product yield, and this is that those skilled in the art undesirably see
's.
Summary of the invention
For the problem of above-mentioned existence, the invention discloses the management and control knot of a kind of ion implantation apparatus vertical direction implant angle
Structure, described governance structure includes faraday；
Described faraday is rotatably mounted in the tail end in the technological reaction chamber of described ion implantation apparatus, and described faraday includes
The framework being provided with accommodation space and the palisade graphite-structure some arranged in parallel being arranged in described accommodation space；
Wherein, setting it is respectively provided with in the described framework at gap, and corresponding described gap between adjacent described palisade graphite-structure
There is opening so that the described ion of part passes described faraday by described gap and described opening.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, described Faraday's initial installation
Position is the position that each described palisade graphite-structure is in level.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, puts in described technological reaction chamber
Before entering wafer, the implant angle of described ion implantation apparatus vertical direction is measured by described faraday.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, when described faraday to described from
When the implant angle of sub-implanter vertical direction measures, first turn clockwise α angle by described faraday, and described from
Sub-implanter is when described faraday injects ion, more described faraday rotates 2 α angles counterclockwise；
Wherein, the implant angle of described ion implantation apparatus vertical direction is when the ion current minimum that described faraday detects
The angle of palisade graphite-structure vertical direction, 5 ° of ＜ α ＜ 15 °.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, α=10 °
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, described faraday also includes motor, described
Motor drives described Faraday rotation.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, described faraday and described technique
The connection of reaction chamber is for removably connecting.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, described governance structure also includes setting
It is placed in the ion baffle plate of described faraday side, to absorb described ion when described ion is by described gap.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, described ion implantation apparatus is middle bundle
Stream ion implantation apparatus.
The governance structure of above-mentioned ion implantation apparatus vertical direction implant angle, wherein, it is characterised in that described framework
Material is metal.
Foregoing invention has the advantage that or beneficial effect:
The invention discloses the governance structure of a kind of ion implantation apparatus vertical direction implant angle, by the work of ion implantation apparatus
The tail end of skill reaction chamber is rotatably mounted a faraday including some palisade graphite-structures, and adjacent described palisade graphite knot
Be respectively provided with gap between structure, and be provided with opening in the framework at corresponding gap so that part ion can by this gap and
Opening passes faraday, so that when measuring ion implantation apparatus vertical direction implant angle, can revolve according to faraday
The angle turned and the implant angle of the acquiring size ion implantation apparatus vertical direction of electric current, and then can effectively management and control ion implanting
The implant angle of machine vertical direction, improves the yield of product.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, the present invention and feature thereof, outward
Shape and advantage will become more apparent.The part that labelling instruction identical in whole accompanying drawings is identical.Not can according to than
Example draws accompanying drawing, it is preferred that emphasis is illustrate the purport of the present invention.
The management and control knot of ion implantation apparatus vertical direction implant angle when Fig. 1 is that in the embodiment of the present invention, faraday initially installs
The schematic diagram of structure；
Fig. 2 is the management and control knot of ion implantation apparatus vertical direction implant angle after Faraday rotation certain angle in the embodiment of the present invention
The schematic diagram of structure；
Fig. 3 is the relation schematic diagram of the ion current that detects of faraday and the angle of Faraday rotation；
Fig. 4 is the contrast signal of the implant angle of the line ion implantation apparatus vertical direction before and after the governance structure using the present invention
Figure.
Detailed description of the invention
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings, but not as the limit of the present invention
Fixed.
As depicted in figs. 1 and 2, the present embodiment relates to the governance structure of a kind of ion implantation apparatus vertical direction implant angle,
Wherein, ion implantation apparatus vertical direction implant angle is the angle between ion and the horizontal line that ion implantation apparatus injects；Excellent
Choosing, this ion implantation apparatus is middle line ion implantation apparatus；Concrete, this governance structure includes faraday 1；This faraday 1 can
It is rotatably mounted to the tail end in the technological reaction chamber of ion implantation apparatus, and faraday 1 includes the framework 11 that is provided with accommodation space
With the palisade graphite-structure 12 some arranged in parallel being arranged in this accommodation space；Wherein, adjacent palisade graphite-structure
Be respectively provided with gap between 12, and be provided with opening in the framework 11 at corresponding gap so that part ion, can by gap and
Opening passes faraday 1.
In one preferred embodiment of the present invention, as it is shown in figure 1, the initial makeup location of above-mentioned faraday 1 is each grid
Shape graphite-structure 12 is in the position of level.
In one preferred embodiment of the present invention, before putting into wafer in technological reaction chamber, faraday 1 centering line
The implant angle of ion implantation apparatus line vertical direction measures, such that it is able to wafer is carried out ion implantation technology it
Before, the implant angle of centering line ion implantation apparatus vertical direction is adjusted so that follow-up wafer is carried out accurately from
Sub-injection technology.
In one preferred embodiment of the present invention, as in figure 2 it is shown, when faraday 1 centering line ion implantation apparatus is vertical
When the implant angle in direction measures, (middle line ion implantation apparatus is ready for the preparation of measurement but does not also carry out ion note
Fashionable), first faraday 1 is turned clockwise 10 ° and (faraday 1 now location is referred to as the first position of rotation, such as figure
Shown in 2), and when middle line ion implantation apparatus injects ion to faraday 1, then faraday 1 is rotated counterclockwise 20 ° (by method
Draw the 1st now location be referred to as the second position of rotation) wherein, rotate counterclockwise to faraday 1 from primary importance
During two position of rotation, the angle of palisade graphite-structure 12 vertical direction during ion current minimum that faraday 1 detects
Degree (i.e. palisade graphite-structure 12 and horizontal angle) is the implant angle of middle line ion implantation apparatus vertical direction.
In an embodiment of the present invention, the ion current that faraday detects shows with the relation of the angle that faraday 1 rotates
It is intended to (wherein X is the ion current that faraday detects, Y is the angle that faraday 1 rotates) as shown in Figure 3, i.e. faraday 1
During anticlockwise rotation, faraday 1 is positioned so that palisade graphite-structure 12 and middle line ion implanting
When the implant angle of machine vertical direction is parallel, the line ion now passed from the gap between palisade graphite-structure 12
At most, so that the electric current of ion that faraday 1 detects is minimum, the now palisade graphite-structure 12 of faraday 1 and level
The angle of the line angle of palisade graphite-structure 12 vertical direction (or referred to as) is the note of line ion implantation apparatus vertical direction
Enter angle；Wherein, the implant angle of line ion implantation apparatus vertical direction may be for the angle or reclinate being bent upwards
Angle, concrete, if the ion that when angle that faraday rotates counterclockwise is less than 10 ° (for example, 6 °), faraday 1 detects
Electric current is minimum, then the implant angle of line ion implantation apparatus vertical direction is reclinate angle, and this reclinate angle
Degree is 10 °-6 °=4 °, is the angle of Faraday's palisade ink structure vertical direction；If the angle that faraday 1 rotates counterclockwise
When degree is an angle more than 10 °, the electric current of the ion that faraday 1 detects is minimum, for example, 16 °, then line ion implantation apparatus
The implant angle of vertical direction is the angle being bent upwards, and this angle being bent upwards is 20 °-16 °=4 °.
In one preferred embodiment of the present invention, faraday 1 also includes motor, and motor drives faraday 1 to rotate；Certainly
This faraday 1 also includes other structure, the emphasis improved due to this and non-invention, is not repeated at this.
In one preferred embodiment of the present invention, the connection in faraday 1 and technological reaction chamber is for removably connecting.
In one preferred embodiment of the present invention, above-mentioned governance structure also includes the ion being arranged at faraday 1 side
Baffle plate 2, to absorb ion, it is to avoid ionic soil when ion is by gap.
In one preferred embodiment of the present invention, the material of above-mentioned framework 11 is metal.
As Fig. 4 can be seen that (wherein, Y-axis is the implant angle of line ion implantation apparatus vertical direction, and X-axis represents experiment
The number of data), compared with conventional art, after using the governance structure of the present invention, the note of line ion implantation apparatus vertical direction
Enter angle obtain effective management and control (in figure, A is the region being provided without governance structure of the present invention, B for have employed management and control of the present invention knot
The region of structure).
It should be appreciated by those skilled in the art that those skilled in the art are combining prior art and above-described embodiment is permissible
Realize change case, do not repeat at this.Such change case has no effect on the flesh and blood of the present invention, does not repeats them here.
Above presently preferred embodiments of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, the equipment and the structure that do not describe in detail the most to the greatest extent are construed as giving reality with the common mode in this area
Execute；Any those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize the disclosure above
Method and technology contents technical solution of the present invention is made many possible variations and modification, or be revised as equivalent variations etc.
Effect embodiment, this has no effect on the flesh and blood of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit of the present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, all still falls within the present invention
In the range of technical scheme protection.
Claims (10)
1. the governance structure of an ion implantation apparatus vertical direction implant angle, it is characterised in that described governance structure includes method
Draw；
Described faraday is rotatably mounted in the tail end in the technological reaction chamber of described ion implantation apparatus, and described faraday includes
The framework being provided with accommodation space and the palisade graphite-structure some arranged in parallel being arranged in described accommodation space；
Wherein, setting it is respectively provided with in the described framework at gap, and corresponding described gap between adjacent described palisade graphite-structure
There is opening so that part ion passes described faraday by described gap and described opening.
2. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 1, it is characterised in that described method
The initial makeup location drawing is the position that each described palisade graphite-structure is in level.
3. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 2, it is characterised in that described
Before putting into wafer in technological reaction chamber, the implant angle of described ion implantation apparatus vertical direction is surveyed by described faraday
Amount.
4. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 3, it is characterised in that when described
When the implant angle of described ion implantation apparatus vertical direction is measured by faraday, first turn clockwise α by described faraday
Angle, and when described ion implantation apparatus injects ion to described faraday, more described faraday is rotated counterclockwise 2 α angles；
Wherein, the implant angle of described ion implantation apparatus vertical direction is when the ion current minimum that described faraday detects
The angle of palisade graphite-structure vertical direction, 5 ° of ＜ α ＜ 15 °.
5. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 4, it is characterised in that α=10 °.
6. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 1, it is characterised in that described method
Drawing the also to include motor, described motor drives described Faraday rotation.
7. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 1, it is characterised in that described method
Draw with the connection in described technological reaction chamber for removably connecting.
8. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 1, it is characterised in that described pipe
Control structure also includes the ion baffle plate being arranged at described faraday side, described to absorb when described ion is by described gap
Ion.
9. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 1, it is characterised in that described from
Sub-implanter is middle line ion implantation apparatus.
10. the governance structure of ion implantation apparatus vertical direction implant angle as claimed in claim 1, it is characterised in that described
The material of framework is metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610889586.0A CN106298415B (en) | 2016-10-12 | 2016-10-12 | A kind of governance structure of ion implantation apparatus vertical direction implant angle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610889586.0A CN106298415B (en) | 2016-10-12 | 2016-10-12 | A kind of governance structure of ion implantation apparatus vertical direction implant angle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106298415A true CN106298415A (en) | 2017-01-04 |
| CN106298415B CN106298415B (en) | 2019-07-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610889586.0A Active CN106298415B (en) | 2016-10-12 | 2016-10-12 | A kind of governance structure of ion implantation apparatus vertical direction implant angle |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108931808A (en) * | 2017-05-26 | 2018-12-04 | 北京中科信电子装备有限公司 | A kind of follow-on ion beam vertical angle measurement method |
| CN109581470A (en) * | 2018-11-29 | 2019-04-05 | 德淮半导体有限公司 | Device and method for ion beam measurement |
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| US6494998B1 (en) * | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
| CN101421815A (en) * | 2005-12-21 | 2009-04-29 | 艾克塞利斯科技公司 | Employing is used for the ion beam angle measurement system and method for the varied angle slot arrays of ion implant systems |
| CN103794448A (en) * | 2013-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Device for measuring angle in vertical direction |
| CN204230207U (en) * | 2014-10-10 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation angle measurement mechanism and ion implant systems |
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2016
- 2016-10-12 CN CN201610889586.0A patent/CN106298415B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6494998B1 (en) * | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
| CN101421815A (en) * | 2005-12-21 | 2009-04-29 | 艾克塞利斯科技公司 | Employing is used for the ion beam angle measurement system and method for the varied angle slot arrays of ion implant systems |
| CN103794448A (en) * | 2013-11-08 | 2014-05-14 | 北京中科信电子装备有限公司 | Device for measuring angle in vertical direction |
| CN204230207U (en) * | 2014-10-10 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Ion implantation angle measurement mechanism and ion implant systems |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108931808A (en) * | 2017-05-26 | 2018-12-04 | 北京中科信电子装备有限公司 | A kind of follow-on ion beam vertical angle measurement method |
| CN108931808B (en) * | 2017-05-26 | 2020-11-06 | 北京中科信电子装备有限公司 | Improved ion beam vertical angle measuring method |
| CN109581470A (en) * | 2018-11-29 | 2019-04-05 | 德淮半导体有限公司 | Device and method for ion beam measurement |
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| Publication number | Publication date |
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| CN106298415B (en) | 2019-07-26 |
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