CN105974730A - Preparation method of SU8 array micro-reaction pool - Google Patents
Preparation method of SU8 array micro-reaction pool Download PDFInfo
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- CN105974730A CN105974730A CN201610432048.9A CN201610432048A CN105974730A CN 105974730 A CN105974730 A CN 105974730A CN 201610432048 A CN201610432048 A CN 201610432048A CN 105974730 A CN105974730 A CN 105974730A
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- Prior art keywords
- film
- array
- fibre faceplate
- preparation
- reaction pool
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Abstract
The invention relates to a preparation method of an SU8 array micro-reaction pool. The preparation method of the SU8 array micro-reaction pool is characterized by comprising a coating step, a pre-baking step, an exposure step, a post-baking step, a cooling step, a developing step, a film strengthening step and a film coating step, wherein the film coating step is coating the wall of the SU8 array micro-reaction pool with a 30-90nm of reflecting thin film. Compared with the prior art, the preparation method has the advantages that the prepared SU8 micro-reaction pool has good optical crosstalk resistance through adding the film coating step, so that the prepared SU8 micro-reaction pool can be better applied to sequencing-based applications with relatively high requirements on the optical property of the SU8 micro-reaction pool.
Description
Technical field
The present invention relates to microelectronic processing technique field, particularly relate to the preparation side of a kind of SU8 array micro reaction pool
Method.
Background technology
Fibre faceplate surface makes array micro reaction pool three kinds of alternate ways: one be fibre faceplate superficial growth without
Machine thin-film material, and use semiconductor microactuator processing technique to produce array micro reaction pool；Two is to have array to decline anti-making
Pond thin-film material is answered to be bonded with fibre faceplate；Three is to use thick resist lithography technique to make polymer array formula on fibre faceplate surface
Micro reaction pool.Thick resist lithography is simple for process and cost of manufacture is low, becomes the first-selected approach that array micro reaction pool makes.
Photoresist also known as photoresist, by photosensitive resin, sensitizer and three kinds of main components of solvent form to photosensitive
The mixing liquid of sense.The technical sophistication of photoresist, kind is more.According to its chemical reaction mechanism and development principle, negativity can be divided
Glue and positive photoresist two class.Form insoluble material after illumination is negative photoresist；Otherwise, it is insoluble to some solvent, through light
Become soluble substance after according to is positive photoresist.Utilize this performance, by photoresist making coatings, just can etch institute at silicon chip surface
The circuitous pattern needed.
Photoresist should have smaller surface tension, makes photoresist have good mobility and covering.SU8 material
It is the negative epoxy photoresist developed by IBM Corporation nineteen ninety-five, there is the highest ultraviolet light sensitive characteristic, making plasticity machine
The MEMS aspects such as tool structure, microfluidic device, MCA obtain a wide range of applications, and are a kind of more conventional thick glue.
SU8 is the organic polymer colloid being dissolved in gamma-butyrolacton by bisphenol A type epoxy resin and being formed, because containing in an average molecule
8 epoxy resin are had to gain the name.Jiao's SU8 phosphorus process is broadly divided into two steps: the light trigger in (1) SU8 absorbs photon, and chemistry occurs
Reaction generates acidic catalyst；(2) acidic catalyst epoxy reaction, formation cause between catalytic molecular under the assosting effect of heat energy
Close cross-linked network.Relative to other thick glue, SU8 processing technique is simple, and reproducible, bio-compatibility is good, easily silicon, glass,
Potteries etc. form array structure on substrate, and SU8 includes the epoxy radicals enriched, and the active response type of chemical property is strong, can be in temperature
React with multiple group generation nucleophilic ring opening with under price modification, can under conditions of not affecting biological activity with various biomolecules altogether
Valency combines, it is possible to effective increase functional group efficiency.Traditional chip material exposition uniformity is poor, and the exposition uniformity of SU8 is good,
High aspect ratio structure can be made, it is possible to form super hydrophobic surface by chemical modification, reduce the frictional force during using, increase
Its abrasion durability strong, has good mechanical performance, relatively low Young's modulus and preferable metal level adhesiveness.These character
SU8 is made to become the splendid selection making micro reaction pool in many photoresists being applied to thick resist lithography technique.
But SU8 is up to 90% in visible light wave range absorbance, SU8 array micro reaction pool is caused to be optically isolated poor performance,
The adjacent mutual crosstalk of the optical signalling between micro reaction pool, reduces the noise when accuracy of optical detection.Additionally, SU8
The problems such as the glue limit of manufacturing process and stress greatly have impact on its process repeatability and yield rate.
Summary of the invention
In order to solve optical signal crosstalk that existing SU8 micro reaction pool preparation method is prevented effectively between adjacent micro reaction pool
Problem, it is an object of the invention to provide the preparation method of a kind of SU8 array micro reaction pool, it is characterised in that include following step
Rapid:
(1) spin coating: SU8 drops to fibre faceplate center, spin fiber panel is until SU8 forms thick layer on fibre faceplate
Spend uniform coating；
(2) front baking: the fibre faceplate that fine jade scribbles SU8 coating is placed in the environment of dry heat, makes SU8 layer film forming；
(3) exposure: employing ultraviolet light will be covered with the SU8 film exposure of the mask of array pattern；
(4) after bake: after bake in the environment of the fibre faceplate dry heat of SU8 film after overlying is exposed；
(5) cooling: the fibre faceplate of the SU8 film processed by overlying after bake is put into and made SU8 film and fibre faceplate fall in helium cabinet
To room temperature；
(6) development: use developing agent to make the SU8 film development on fibre faceplate, form array reaction tank；
(7) hard mould: the SU8 array reaction tank formed and fibre faceplate are put into and carries out hard mould, oven temperature in baking oven
It is 80 DEG C, continues 1-1.5h；
(8) plated film: SU8 array reaction tank pool wall is plated the reflective film of 30-90nm.
Further, the one during the material of reflectance coating described in plating steps is gold, silver, aluminum, copper.Passed by photon energy
Pass relation, under conditions of conservative control optical absorption, the transmission of light can be reduced by increasing the reflectance on surface.Reflectance coating
Can be effectively increased surface reflectivity, and application conditions mature and reliable, conventional reflectance coating has metallic reflective coating and full electrolyte anti-
Penetrate film two class.Full electrolyte reflectance coating generally has high reflectance and absorbance relatively low at specific wavelength, but be difficult to whole can
High reflectance is kept in seeing optical range.The operating wavelength range width of metallic reflective coating, and preparation technology is the simplest.Wherein,
Gold, silver, aluminum, copper these four metal have good reflectance, and their plating conditions is also looser than other metals.
Further, the material of reflectance coating described in plating steps is aluminum.Compared to other metals above-mentioned, aluminum is near ultraviolet
Light, visible ray and near infrared light will be good reflecting rate, aluminum also can thickness less than 100nm time also keep preferably reflecting
Rate.
Further, described reflectance coating thickness is 40-55nm.Irradiate the pass of the penetration depth of light and the fundamental property of material
It is as follows: δ=[λ/(π c μ σ)] ^ (1/2), wherein δ is the penetration depth of light, and λ is the wavelength of light, and c is the light velocity, and μ is leading of material
Magnetic coefficient, σ is quiet electrical conductivity.Being understood by this formula, the wavelength of light is the longest more penetrates readily through irradiated material；And
The electrical conductivity of material is the highest, and the penetration depth irradiating light is the most shallow, thus the reflectance that materials control penetrates light is the highest.Skill of the present invention
Art personnel combine this formula and substantial amounts of test draws, reflectance coating thickness not only can reach the biggest when 40-55nm
Reflectance, also the structure of micro reaction pool and performance will not be produced significantly impact.
Further, the plated film mode of described reflective film is evaporation.Plated film typically has three kinds of modes: evaporation
(evaporation), sputter (sputtering) and ion coating (ion plating).Owing to the present invention program is intended to instead
Penetrate film plating be only plated on reaction tank pool wall, plating steps the most of the present invention should select one can to the plated film scope control of target relatively
Good plated film mode.In evaporation mode, technical staff can by adjust the factor such as orientation substrate, evaporation rate can be preferable
Ground controls the plated film scope of target.Meanwhile, the metal that other modes of luminance factor making genus reflectance coating that evaporation is formed are formed is anti-
The reflectance penetrating film wants height.It addition, the cost of metal evaporation is cheaper than other two ways, beneficially the present invention program exists
Application in actual industrial production.
Further, described evaporation is 10-6-10-8The vacuum of Pa completes.Under this condition, the metal formed
The density of reflectance coating is relatively big, thus its reflectance is the highest.
Further, in plating steps, the temperature of SU8 array reaction tank and fibre faceplate is 60-70 DEG C.This
Condition advantageously forms the metallic reflective coating that density is bigger, so that the reflectance of the reflectance coating formed is bigger.
Compared with prior art, it is an advantage of the invention that the step by adding plated film, make the SU8 micro reaction pool prepared
There is good anti-optical crosstalk ability, it is thus possible to be preferably applied for based on order-checking etc., SU8 micro reaction pool optical property being wanted
Ask in higher application.
Detailed description of the invention
Embodiments of the invention are described below in detail, are only used for explaining the present invention, and limitation of the present invention can not be considered as.
For reducing the variable of test, the degree of depth of following SU8 reaction tank, the SU8 film that preparation method the most of the present invention is initially formed
Thickness, be 30 μm, the pool wall thickness between reaction tank is 6 μm, reaction tank cross section be 30 μ m 30 μm square, reaction tank battle array
It is classified as 10 × 10 quadrate arrays.
But, those skilled in the art, it is known that reaction tank array can be arranged by more reasonably geometry, make anti-
Answering pond to arrange tightr, the size and dimension of reaction tank itself can also do other and adjust according to concrete applied environment.
Embodiment 1
(1) spin coating: SU8 drops to fibre faceplate center, spin fiber panel is until SU8 forms thick layer on fibre faceplate
Spend uniform coating；
(2) front baking: the fibre faceplate that fine jade scribbles SU8 coating is placed in the environment of dry heat, makes SU8 layer film forming；
(3) exposure: employing ultraviolet light will be covered with the SU8 film exposure of the mask of array pattern；
(4) after bake: after bake in the environment of the fibre faceplate dry heat of SU8 film after overlying is exposed；
(5) cooling: the fibre faceplate of the SU8 film processed by overlying after bake is put into and made SU8 film and fibre faceplate fall in helium cabinet
To room temperature；
(6) development: use developing agent to make the SU8 film development on fibre faceplate, form array reaction tank；
(7) hard mould: the SU8 array reaction tank formed and fibre faceplate are put into and carries out hard mould, oven temperature in baking oven
It is 80 DEG C, continues 1-1.5h；
(8) plated film: the method that SU8 array reaction tank pool wall is deposited with is plated the aluminum reflective film of 40 nm, is wherein deposited with gas
Pressure is 6.7*10-7The temperature of Pa, SU8 array reaction tank and fibre faceplate is 60 DEG C.
Embodiment 2
(1) spin coating: SU8 drops to fibre faceplate center, spin fiber panel is until SU8 forms thick layer on fibre faceplate
Spend uniform coating；
(2) front baking: the fibre faceplate that fine jade scribbles SU8 coating is placed in the environment of dry heat, makes SU8 layer film forming；
(3) exposure: employing ultraviolet light will be covered with the SU8 film exposure of the mask of array pattern；
(4) after bake: after bake in the environment of the fibre faceplate dry heat of SU8 film after overlying is exposed；
(5) cooling: the fibre faceplate of the SU8 film processed by overlying after bake is put into and made SU8 film and fibre faceplate fall in helium cabinet
To room temperature；
(6) development: use developing agent to make the SU8 film development on fibre faceplate, form array reaction tank；
(7) hard mould: the SU8 array reaction tank formed and fibre faceplate are put into and carries out hard mould, oven temperature in baking oven
It is 80 DEG C, continues 1-1.5h；
(8) plated film: the method that SU8 array reaction tank pool wall is deposited with is plated the golden reflective film of 30nm, is wherein deposited with gas
Pressure is 9*10-7The temperature of Pa, SU8 array reaction tank and fibre faceplate is 65 DEG C.
Embodiment 3
(1) spin coating: SU8 drops to fibre faceplate center, spin fiber panel is until SU8 forms thick layer on fibre faceplate
Spend uniform coating；
(2) front baking: the fibre faceplate that fine jade scribbles SU8 coating is placed in the environment of dry heat, makes SU8 layer film forming；
(3) exposure: employing ultraviolet light will be covered with the SU8 film exposure of the mask of array pattern；
(4) after bake: after bake in the environment of the fibre faceplate dry heat of SU8 film after overlying is exposed；
(5) cooling: the fibre faceplate of the SU8 film processed by overlying after bake is put into and made SU8 film and fibre faceplate fall in helium cabinet
To room temperature；
(6) development: use developing agent to make the SU8 film development on fibre faceplate, form array reaction tank；
(7) hard mould: the SU8 array reaction tank formed and fibre faceplate are put into and carries out hard mould, oven temperature in baking oven
It is 80 DEG C, continues 1-1.5h；
(8) plated film: the method that SU8 array reaction tank pool wall is deposited with is plated the aluminum reflective film of 55nm, is wherein deposited with gas
Pressure is 5*10-6The temperature of Pa, SU8 array reaction tank and fibre faceplate is 70 DEG C.
Embodiment 4
(1) spin coating: SU8 drops to fibre faceplate center, spin fiber panel is until SU8 forms thick layer on fibre faceplate
Spend uniform coating；
(2) front baking: the fibre faceplate that fine jade scribbles SU8 coating is placed in the environment of dry heat, makes SU8 layer film forming；
(3) exposure: employing ultraviolet light will be covered with the SU8 film exposure of the mask of array pattern；
(4) after bake: after bake in the environment of the fibre faceplate dry heat of SU8 film after overlying is exposed；
(5) cooling: the fibre faceplate of the SU8 film processed by overlying after bake is put into and made SU8 film and fibre faceplate fall in helium cabinet
To room temperature；
(6) development: use developing agent to make the SU8 film development on fibre faceplate, form array reaction tank；
(7) hard mould: the SU8 array reaction tank formed and fibre faceplate are put into and carries out hard mould, oven temperature in baking oven
It is 80 DEG C, continues 1-1.5h；
(8) plated film: the method that SU8 array reaction tank pool wall is deposited with is plated the silver-colored reflective film of 85nm, is wherein deposited with gas
Pressure is 3.5*10-6The temperature of Pa, SU8 array reaction tank and fibre faceplate is 70 DEG C.
Comparative example 1
(1) spin coating: SU8 drops to fibre faceplate center, spin fiber panel is until SU8 forms thick layer on fibre faceplate
Spend uniform coating；
(2) front baking: the fibre faceplate that fine jade scribbles SU8 coating is placed in the environment of dry heat, makes SU8 layer film forming；
(3) exposure: employing ultraviolet light will be covered with the SU8 film exposure of the mask of array pattern；
(4) after bake: after bake in the environment of the fibre faceplate dry heat of SU8 film after overlying is exposed；
(5) cooling: the fibre faceplate of the SU8 film processed by overlying after bake is put into and made SU8 film and fibre faceplate fall in helium cabinet
To room temperature；
(6) development: use developing agent to make the SU8 film development on fibre faceplate, form array reaction tank；
(7) hard mould: the SU8 array reaction tank formed and fibre faceplate are put into and carries out hard mould, oven temperature in baking oven
It is 80 DEG C, continues 1-1.5h.
Coated for Cy3 fluorescent marker polystyrene microsphere is filled into by the various embodiments described above by centrifugal action and
The SU8 array micro reaction pool that comparative example scheme is prepared, detects fluorescence signal from its back side.Wherein, according to above-mentioned each enforcement
Example and comparative example scheme prepare 9 array reaction tanks respectively, and each array reaction tank repeats at least 30 fluorescence letters
Number detection, average reflecting rate and the average optical crosstalk rate of these array reaction tanks are listed in the following table.
Can be apparent from from upper table, the SU8 micro reaction pool with metallic reflection has good anti-optical crosstalk energy
Power, the reflecting rate of metallic reflective coating has an impact by Coating Materials, coating film thickness and plating conditions, thus further to micro-reaction
The optical crosstalk rate in pond has an impact.
Above-mentioned detailed description is illustrating for one of them possible embodiments of the present invention, and this embodiment is also not used to
Limiting the scope of the claims of the present invention, all equivalences done without departing from the present invention are implemented or change, are intended to be limited solely by the technology of the present invention
In the range of scheme.
Claims (7)
1. the preparation method of a SU8 array micro reaction pool, it is characterised in that comprise the following steps:
(1) spin coating: SU8 drops to fibre faceplate center, spin fiber panel is until SU8 forms thick layer on fibre faceplate
Spend uniform coating；
(2) front baking: the fibre faceplate that fine jade scribbles SU8 coating is placed in the environment of dry heat, makes SU8 layer film forming；
(3) exposure: employing ultraviolet light will be covered with the SU8 film exposure of the mask of array pattern；
(4) after bake: after bake in the environment of the fibre faceplate dry heat of SU8 film after overlying is exposed；
(5) cooling: the fibre faceplate of the SU8 film processed by overlying after bake is put into and made SU8 film and fibre faceplate fall in helium cabinet
To room temperature；
(6) development: use developing agent to make the SU8 film development on fibre faceplate, form array reaction tank；
(7) hard mould: the SU8 array reaction tank formed and fibre faceplate are put into and carries out hard mould, oven temperature in baking oven
It is 80 DEG C, continues 1-1.5h；
(8) plated film: SU8 array reaction tank pool wall is plated the reflective film of 30-90nm.
2. the preparation method of SU8 array micro reaction pool as claimed in claim 1, it is characterised in that anti-described in plating steps
The material penetrating film is the one in gold, silver, aluminum, copper.
3. the preparation method of SU8 array micro reaction pool as claimed in claim 2, it is characterised in that anti-described in plating steps
The material penetrating film is aluminum.
4. the preparation method of the SU8 array micro reaction pool as described in any one of claim 3, it is characterised in that described reflection
Film thickness is 40-55nm.
5. the preparation method of the SU8 array micro reaction pool as described in any one of claim 1-4, it is characterised in that described
The plated film mode of reflective film is evaporation.
6. the preparation method of SU8 array micro reaction pool as claimed in claim 5, it is characterised in that described evaporation is 10-6-10-8The vacuum of Pa completes.
7. the preparation method of the SU8 array micro reaction pool as described in any one of claim 1-5, it is characterised in that in plating
In film step, the temperature of SU8 array reaction tank and fibre faceplate is 60-70 DEG C.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2015105218197 | 2015-08-24 | ||
| CN201510521775.8A CN105045050A (en) | 2015-08-24 | 2015-08-24 | Fabrication process for photoresist die |
| CN201510521819.7A CN105204290A (en) | 2015-08-24 | 2015-08-24 | Preparation method of SU8 array type micro-reaction cell |
| CN2015105217758 | 2015-08-24 |
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| Publication Number | Publication Date |
|---|---|
| CN105974730A true CN105974730A (en) | 2016-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610432048.9A Pending CN105974730A (en) | 2015-08-24 | 2016-06-17 | Preparation method of SU8 array micro-reaction pool |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110218628A (en) * | 2019-06-19 | 2019-09-10 | 中国科学院半导体研究所 | A kind of digital pcr chip and preparation method thereof |
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| CN105204290A (en) * | 2015-08-24 | 2015-12-30 | 北京中科紫鑫科技有限责任公司 | Preparation method of SU8 array type micro-reaction cell |
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| US6473237B2 (en) * | 2000-11-14 | 2002-10-29 | Ball Semiconductor, Inc. | Point array maskless lithography |
| CN101025460A (en) * | 2006-02-22 | 2007-08-29 | 中国科学院长春光学精密机械与物理研究所 | Micro optical component positioning structure and micro channel module preparation using micro channel array |
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Application publication date: 20160928 |