CN105914276A - Epitaxial structure of LED and preparation method thereof - Google Patents

Epitaxial structure of LED and preparation method thereof Download PDF

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Publication number
CN105914276A
CN105914276A CN201610500604.1A CN201610500604A CN105914276A CN 105914276 A CN105914276 A CN 105914276A CN 201610500604 A CN201610500604 A CN 201610500604A CN 105914276 A CN105914276 A CN 105914276A
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gan layer
type gan
growth
epitaxial structure
layer
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CN201610500604.1A
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CN105914276B (en
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展望
马后永
琚晶
游正璋
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Enraytek Optoelectronics Co Ltd
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Enraytek Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Abstract

The invention discloses an epitaxial structure of an LED. The epitaxial structure is grown on a substrate. The epitaxial structure comprises a low-temperature nucleating layer, an unintentionally doped GaN layer, an N-type GaN layer, a light-emitting layer and a P-type GaN layer in sequence from the end close to the substrate; the N-type GaN layer is a V/III ratio periodically alternating change growth structure, and a V/III ratio is the ratio of V-group elements to III-group elements. The V/III ratio periodically changes in the growth process of the N-type GaN layer, so that the crystalline quality of the N-type GaN layer is improved, and the backward voltage of the LED is obviously increased.

Description

A kind of epitaxial structure of Light-Emitting Diode and preparation method thereof
Technical field
The present invention relates to quasiconductor technology of preparing, be specifically related to epitaxial structure of a kind of gallium nitride radical luminescence diode and preparation method thereof.
Background technology
Light emitting diode (LED) is the core devices that semi-conductor photoelectronic shows, has the advantages such as high efficiency, long-life, energy-conservation and environmental protection, is widely used in the fields such as display lamp, signal lights, display screen, backlight, solid-state illumination.
Due at sapphire, carborundum (SiC) or silicon (Si) Grown gallium nitride (GaN) base film, the difference of lattice paprmeter and thermal coefficient of expansion causes GaN film to there is substantial amounts of epitaxy defect, the number of epitaxy defect decides the size of LED breakdown reverse voltage to a certain extent, the size of breakdown reverse voltage characterizes the height of aging reliability the most to a certain extent, therefore the crystalline quality of GaN film is improved, reduce epitaxial growth defect, just become the important means improving LED breakdown reverse voltage.
Summary of the invention
The present invention provides epitaxial structure of a kind of Light-Emitting Diode and preparation method thereof, improves the crystalline quality of N-type GaN, reduces epitaxial growth defect, promotes the breakdown reverse voltage of LED.
For achieving the above object, the present invention provides the epitaxial structure of a kind of Light-Emitting Diode, being characterized in, this epitaxial structures growth is on substrate, and this epitaxial structure is comprised successively by near substrate one end: low temperature nucleation layer, involuntary doped gan layer, N-type GaN layer, luminescent layer and p-type GaN layer；Described N-type GaN layer is V/III ratio periodically alternate growth structure, and V/III ratio is the ratio of V group element/group-III element.
Above-mentioned N-type GaN layer is n periodically V/III ratio alternate growth structure；N is more than or equal to 1；10000 >=V/ III ratio > 0.
Above-mentioned substrate is sapphire or GaN or silicon or carborundum, if or the combination of any of the above dry substance.
The thickness of above-mentioned N-type GaN layer is 1.5 ~ 4.5 microns.
The preparation method of the epitaxial structure of a kind of Light-Emitting Diode, is characterized in, the method comprises:
Growing low temperature nucleating layer, unadulterated GaN layer and N-type GaN layer successively on substrate；
After the growth of N-type GaN layer terminates, N-type GaN layer grows luminescent layer and multi-quantum pit structure thereon；
Growth P-type GaN layer on luminescent layer；
Its V/III ratio cyclically-varying in the growth course of above-mentioned N-type GaN layer, V/III ratio is the ratio of V group element/group-III element.
Above-mentioned nucleating layer growth temperature is 400 ~ 700 degrees Celsius, and growth thickness is 15 ~ 50 nanometers.
Above-mentioned N-type GaN layer is to be formed by the periodically alternate growth of n V/ III ratio；N is more than or equal to 1,10000 >=V/III ratio > 0.
The growth temperature range of above-mentioned unadulterated GaN layer and/or N-type GaN layer is 800 ~ 1200 degrees Celsius.
Above-mentioned N-type GaN layer doping concentration scope is 1e18 ~ 3e19cm-3.
In the growth course of above-mentioned N-type GaN layer, its V/III ratio cyclically-varying is that the velocity ratio by regulation V group element and group-III element realizes.
Epitaxial structure of a kind of Light-Emitting Diode of the present invention and preparation method thereof is compared with the light emitting diode epitaxial structure technology of preparing of prior art, have an advantage in that, the present invention improves the crystalline quality of N-type GaN layer by changing the growth conditions of N-type GaN layer in LED basic structure, realize its V/III during growth N-type GaN layer by the velocity ratio of regulation V group element and group-III element and compare cyclically-varying, realize improving the crystalline quality of N-type GaN layer by this kind of epitaxial growth method, and the backward voltage of LED is obviously improved.
Accompanying drawing explanation
Fig. 1 be the present invention be the structural scheme of mechanism of the epitaxial structure of Light-Emitting Diode of the present invention；
Fig. 2 be the present invention be the flow chart of the preparation method of the epitaxial structure of Light-Emitting Diode of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, further illustrate the specific embodiment of the present invention.
As shown in Figure 1, embodiment one for the epitaxial structure of a kind of Light-Emitting Diode, this epitaxial structures growth is on substrate 001, and this epitaxial structure is comprised successively by near substrate one end: low temperature nucleation layer 002, involuntary doped gallium nitride layer (u-GaN layer) 003, N-type GaN layer 004, luminescent layer 005 and p-type GaN layer 006.
The growth thickness of low temperature nucleation layer 002 is that 15 nanometers are to 50 nanometers.
Wherein, N-type GaN layer is that V/III ratio periodically alternate length in next life obtains structure, and V/III ratio is the ratio of V group element/group-III element.
Further, N-type GaN layer is n periodically V/III ratio alternate growth structure, and n is more than or equal to 1,10000 >=V/III ratio > 0.Wherein another embodiment of V/III ratio is 8000 >=V/III ratio > 0.
Here, V/III ratio periodically alternate is the flow velocity ratio cyclically-varying realization by regulating V group element and group-III element in N-type GaN layer growth course.V group element can be ammonia (NH3).
Substrate 001 uses and is suitable for GaN and the material of semiconductor epitaxial Material growth, such as monocrystalline, concrete used sapphire or GaN or silicon or carborundum, if or the combination of any of the above dry substance.
Total growth thickness of N-type GaN layer 004 is 1.5 to 4.5 microns.The Si doping content of N-type GaN layer 004 is at 1e18 to 3e19cm-3(ions per cubic centimeter).
Luminescent layer 005 is luminescent layer multi-quantum pit structure, and this luminescent layer 005 includes the potential barrier potential well cycle to 2 to 30.In luminescent layer 005, the component of indium In is 15% to 20%.In luminescent layer 005, the thickness of InGaN potential well is 0.5 to 5 nanometer, and the thickness of GaN potential well is 1 to 30 nanometer.
The thickness of p-type GaN layer 006 is 30 to 500 nanometers.The magnesium Mg concentration of p-type GaN layer 006 is 1e18 to 2e20cm-3.
Such as Fig. 2 and combine shown in Fig. 1, for the preparation method of embodiment one of the epitaxial structure of above-mentioned Light-Emitting Diode, the method specifically comprises the steps of
S1, on substrate 001 growing low temperature nucleating layer 002, the growth temperature of low temperature nucleation layer 002 is 400 to 700 degrees Celsius, and growth thickness is that 15 nanometers are to 50 nanometers.
S2, on low temperature nucleation layer 002, grow unadulterated GaN layer 003(u-GaN layer), this unadulterated GaN layer 003 growth temperature is at 800 degrees Celsius to 1200 degrees Celsius.
S3, in unadulterated GaN layer 003 grow N-type GaN layer 004, the growth temperature of N-type GaN layer 004 is 800 degrees Celsius to 1200 degrees Celsius, and total growth thickness is 1.5 microns to 4.5 microns.
In the present invention, its V/III ratio cyclically-varying in the growth course of N-type GaN layer 004, the periodically alternate growth of n V/III ratio formed；Wherein, n is more than or equal to 1,10000 >=V/III ratio > 0(or 8000 >=V/III ratio > 0), V/III ratio is the ratio of V group element/group-III element.In the growth course of N-type GaN, its V/III ratio cyclically-varying is that the velocity ratio by regulation V group element and group-III element realizes.N-type GaN layer doping concentration scope is 1e18 to 3e19cm-3.
In concrete operations, V group element can be ammonia (NH3), when growing N-type GaN layer 004, and supply ammonia and the flow velocity ratio cyclically-varying of group-III element, realize reducing epitaxy defect and improving epitaxial crystallization quality, and then promote the breakdown reverse voltage of GaN base LED.
N V/III ratio periodically alternate, n is more than or equal to 1, is specifically as follows: just, low high alternate, or low height, just alternate, or the lowest High variation, or height change always, can also be the most from high to low, or change the most from low to high.
Illustrate with following embodiment:
Such as working as n=1, in the single cycle, V/III ratio can have a situations below:
1) change from high to low, such as: V/III ratio is by 5000 to 4000 changes；
2) change from low to high, such as: V/III ratio is by 4000 to 5000 changes.
Such as working as n=2, in the single cycle, V/III ratio can have a situations below:
1) repeat to change from low to high, such as: V/III ratio is changed to 5000 by 4000, return 4000, repeat to be changed to 5000 by 4000；
2) repeat to change from high to low, such as: V/III ratio is changed to 4000 by 5000, return 5000, repeat to be changed to 4000 by 5000；
3) from low to high, then change from high to low, such as: V/III ratio is changed to 5000 by 4000, then is changed to 4000 by 5000；
4) from high to low, then change from low to high, such as: V/III ratio is changed to 4000 by 5000, then is changed to 5000 by 4000.
Such as working as n=3, in the single cycle, V/III ratio can have a situations below:
1) repeat to change from low to high, such as: V/III ratio is changed to 3000 by 2000, then is changed to 4000, be then return to the change procedure that 2000 repetitions 2000 to 3000 are to 4000；
2) repeat to change from high to low, such as: V/III ratio is changed to 3000 by 4000, in the 2000 of change, be then return to the change procedure that 4000 repetitions 4000 to 3000 are to 2000.
After the growth of S4, N-type GaN layer 004 terminates, N-type GaN layer 004 grows luminescent layer 005.The growth temperature of luminescent layer 005 is 600 degrees Celsius to 900 degrees Celsius, and growth has multi-quantum pit structure, preparation to have GaN potential barrier and InGaN potential well, and the thickness of InGaN potential well is 0.5 nanometer to 5 nanometers, and the thickness of GaN potential barrier is that 1 nanometer is to 30 nanometers.The potential barrier potential well cycle contained by luminescent layer 005 is to 2 to 30.The indium In component of luminescent layer 005 is 15% to 20%.
S5, on luminescent layer 005 growth P-type GaN layer 006.The growth temperature of p-type GaN layer 006 is 800 degrees Celsius to 1100 degrees Celsius, and growth thickness is 30 nanometers to 500 nanometers, and magnesium Mg doping content is 1e18 to 2e20 cm-3.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read foregoing, multiple amendment and replacement for the present invention all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (10)

1. the epitaxial structure of a Light-Emitting Diode, it is characterised in that this epitaxial structures growth is on substrate, and this epitaxial structure is comprised successively by near substrate one end: low temperature nucleation layer, involuntary doped gan layer, N-type GaN layer, luminescent layer and p-type GaN layer；Described N-type GaN layer is V/III ratio periodically alternate growth structure, and V/III ratio is the ratio of V group element/group-III element.
2. the epitaxial structure of Light-Emitting Diode as claimed in claim 1, it is characterised in that described N-type GaN layer is n periodically V/III ratio alternate growth structure；N is more than or equal to 1；10000 >=V/ III ratio > 0.
3. the epitaxial structure of Light-Emitting Diode as claimed in claim 1, it is characterised in that described substrate is sapphire or GaN or silicon or carborundum, if or the combination of any of the above dry substance.
4. the epitaxial structure of Light-Emitting Diode as claimed in claim 1, it is characterised in that the thickness of described N-type GaN layer is 1.5 ~ 4.5 microns.
5. the preparation method of the epitaxial structure of a Light-Emitting Diode, it is characterised in that the method comprises:
Growing low temperature nucleating layer, unadulterated GaN layer and N-type GaN layer successively on substrate；
After the growth of N-type GaN layer terminates, N-type GaN layer grows luminescent layer and multi-quantum pit structure thereon；
Growth P-type GaN layer on luminescent layer；
Its V/III ratio cyclically-varying in the growth course of described N-type GaN layer, V/III ratio is the ratio of V group element/group-III element.
6. the preparation method of the epitaxial structure of Light-Emitting Diode as claimed in claim 5, it is characterised in that described nucleating layer growth temperature is 400 ~ 700 degrees Celsius, and growth thickness is 15 ~ 50 nanometers.
7. the preparation method of the epitaxial structure of Light-Emitting Diode as claimed in claim 5, it is characterised in that described N-type GaN layer is to be formed by the periodically alternate growth of n V/ III ratio；N is more than or equal to 1,10000 >=V/III ratio > 0.
8. the preparation method of the epitaxial structure of Light-Emitting Diode as claimed in claim 5, it is characterised in that the growth temperature range of described unadulterated GaN layer and/or N-type GaN layer is 800 ~ 1200 degrees Celsius.
9. the preparation method of the epitaxial structure of Light-Emitting Diode as claimed in claim 5, it is characterised in that described N-type GaN layer doping concentration scope is 1e18 ~ 3e19cm-3.
10. the preparation method of the epitaxial structure of Light-Emitting Diode as claimed in claim 5, it is characterised in that in the growth course of described N-type GaN layer, its V/III ratio cyclically-varying is that the velocity ratio by regulation V group element and group-III element realizes.
CN201610500604.1A 2016-06-30 2016-06-30 A kind of epitaxial structure of Light-Emitting Diode and preparation method thereof Expired - Fee Related CN105914276B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108428629A (en) * 2018-04-08 2018-08-21 江南大学 Utilize F+The method that ion implanting realizes the doping of GaN base LED P type
CN113270525A (en) * 2021-04-30 2021-08-17 广东德力光电有限公司 Preparation method of green light epitaxial structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
CN1776887A (en) * 2004-11-19 2006-05-24 日立电线株式会社 Group iii-v nitride series semiconductor substrate and assessment method therefor
CN104300060A (en) * 2014-10-11 2015-01-21 北京工业大学 Green-ray LED structure with component gradual-change buffering layer
CN105140356A (en) * 2015-09-01 2015-12-09 山东浪潮华光光电子股份有限公司 Al component gradually-changed N-type LED structure and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
CN1776887A (en) * 2004-11-19 2006-05-24 日立电线株式会社 Group iii-v nitride series semiconductor substrate and assessment method therefor
CN104300060A (en) * 2014-10-11 2015-01-21 北京工业大学 Green-ray LED structure with component gradual-change buffering layer
CN105140356A (en) * 2015-09-01 2015-12-09 山东浪潮华光光电子股份有限公司 Al component gradually-changed N-type LED structure and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108428629A (en) * 2018-04-08 2018-08-21 江南大学 Utilize F+The method that ion implanting realizes the doping of GaN base LED P type
CN113270525A (en) * 2021-04-30 2021-08-17 广东德力光电有限公司 Preparation method of green light epitaxial structure

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