CN105836697B - MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof - Google Patents
MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN105836697B CN105836697B CN201510016386.XA CN201510016386A CN105836697B CN 105836697 B CN105836697 B CN 105836697B CN 201510016386 A CN201510016386 A CN 201510016386A CN 105836697 B CN105836697 B CN 105836697B
- Authority
- CN
- China
- Prior art keywords
- substrate
- cantilever beam
- mems
- contact hole
- cantilever
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention provides an MEMS (Micro Electro Mechanical Systems) cantilever structure and a manufacturing method thereof. The manufacturing method comprises the following steps: 1) providing a substrate, etching one end of the substrate to form a plurality of first trenches, and filling the trenches with a medium material; 2) depositing a sacrificial layer on a surface of the substrate, and etching the sacrificial layer and the other end of the substrate to form a contact hole; 3) growing an isolation layer on a side wall of the contact hole; 4) filling the contact hole with a conducting material, performing etching to form a plurality of second trenches, and filling the second trenches with a cantilever material till the conducting material covers the surfaces of the conducting material and the sacrificial layer; and 5) removing the sacrificial layer to form the cantilever structure. According to the MEMS cantilever structure, the first trenches are formed in the substrate and filled with the medium material on one hand, so that a contact area between a cantilever and the substrate can be reduced, and electrostatic attraction is reduced, thereby preventing adhesion of a free end of the cantilever. On the other hand, a root connection end of the cantilever has an embedded molding structure, so that root bending torque can be improved, and the fracture risk is lowered.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of MEMS cantilever beam structures and preparation method thereof.
Background technology
MEMS (microelectromechanical systems) technology is a fast-developing in recent years new and high technology, and it is using advanced half
Conductor manufacturing process, is capable of achieving the batch micro operations of MEMS, and compared with corresponding traditional devices, MEMS is in volume, work(
Consumption, weight and there is suitable advantage in price.
In MEMS micro mechanical structures, cantilever beam structure is to apply a kind of quite extensive structure, upper and lower by cantilever beam
Vibration, causes the change of space charge, so as to cause the change of signal, the purpose of structure design is reached, so for material
Stress system and coefficient of elasticity just become especially sensitive and important.
It is as depicted in figs. 1 and 2 the flowage structure figure for making cantilever beam structure in the prior art, is first existed using depositing technics
Sacrifice layer 105A is made on substrate 101A, cantilever beam is then made using same depositing technics on sacrifice layer 105A again
112A, finally removes the sacrifice layer 105A below cantilever beam 112A, that is, form movable micro-structural.Such as Fig. 2, the micro-structural bag
Substrate 101A and cantilever beam 112A is included, the substrate 101A surfaces are fixed in described cantilever beam 112A one end, and the other end is for freely
Mobile terminal.
This cantilever beam structure has two：Fracture of root adheres to base material with end is moved freely.
Cantilever beam length is significantly larger than the height and width of beam, if increasing mass, cantilever beam degree of disturbing can be caused to increase, cantilever beam
Root easy fracture.Additionally due to micro-structural is made frequently with fragile materials such as monocrystalline silicon, polysilicon, germanium silicon, is impacting or shaking
Under load effect, when stress exceedes the strength degree of material, also easily there is fracture failure.And can also be seen that it is existing this
Plant preparation method and use integral type making, structure is discharged by removing sacrifice layer, but this integral type causes cantilever
The root of beam is susceptible to fracture, because length micro cantilever structure more long is easier to cause altogether in shock loading vibrated
Shake and cause the stress level of beam and change in displacement larger, particularly under the effect of simple harmonic oscillation load, angled cantilevered beams end
Response is relevant with the intensity and frequency of excitation, and oscillation intensity is bigger, and the displacement of beam is bigger so that the torque of cantilever beam root bending increases
Greatly, the risk of fracture is also bigger.
During removal sacrifice layer, the surface tension of cleaning fluid can produce the sticking problem of cantilever beam structure.Due to micromechanics
The microminiaturization surface to volume ratio of physical dimension is relative to be strengthened, and surface tension is significantly enhanced for the influence of structure, only
During occurring to be discharged with sacrifice layer, a kind of fluid characteristics formed because the molecule adhered on surface is uneven, its
Result is that fluid level tends to shrinking, and the surface tension of cleaning fluid enough causes greatly that micro cantilever structure is dragged to be deformed, and makes
It is in contact with substrate into micro cantilever structure.On the other hand, the inside configuration that cantilever beam structure device is produced in manufacturing process
Residual stress, will also result in the generation of adhesion under certain temperature and humidity environment.
Therefore it provides a kind of anti-fracture and adhesion novel cantilever girder construction and preparation method thereof that has concurrently is art technology
Personnel need the problem for solving.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of MEMS cantilever beam structures and its
Preparation method, for solving the problems, such as that cantilever beam structure is easily broken and adheres in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation method of MEMS cantilever beam structures,
The preparation method at least includes step：
1) substrate is provided, the one end for etching the substrate forms several first grooves, and first is filled in the trench
Dielectric material；
2) in the substrate surface deposition of sacrificial layer, the other end of the sacrifice layer and substrate is etched, forms contact hole；
3) separation layer is grown on the side wall of the contact hole；
4) conductive material is filled in the contact hole, the conductive material is etched and is formed several second grooves, in institute
Filling cantilever material is until cantilever material covers conductive material and sacrificial layer surface in stating second groove；
5) sacrifice layer is removed, cantilever beam structure is formed.
As a kind of scheme of optimization of the preparation method of MEMS cantilever beam structures of the present invention, the step 1) middle formation Jie
The process of material is：Using physical vapour deposition (PVD) or chemical vapor deposition in the trench and substrate superficial growth medium material
Material, grinds away the dielectric material of substrate surface afterwards, and the dielectric material is silica.
As a kind of scheme of optimization of the preparation method of MEMS cantilever beam structures of the present invention, the step 2) in sacrifice
Layer is germanium, and the one end for etching the sacrifice layer and substrate using dry etching mode in the step forms contact hole.
As a kind of scheme of optimization of the preparation method of MEMS cantilever beam structures of the present invention, the step 3) in isolation
Layer is silica.
As a kind of scheme of optimization of the preparation method of MEMS cantilever beam structures of the present invention, the step 4) in be filled in
Conductive material in contact hole is germanium silicon.
As a kind of scheme of optimization of the preparation method of MEMS cantilever beam structures of the present invention, the step 4) it is middle using dry
Method etching mode forms second groove, and the cantilever material is monocrystalline silicon, polysilicon or germanium silicon.
As a kind of scheme of optimization of the preparation method of MEMS cantilever beam structures of the present invention, the step 5) it is middle using wet
The mode of method etching removes the sacrifice layer.
The present invention also provides a kind of MEMS cantilever beam structures, and the MEMS cantilever beam structures at least include：
Substrate, one end of the substrate forms several first grooves, and the other end forms contact hole；
Dielectric material, is filled in the first groove；
Conductive material, is filled in the contact hole, the conductive material surface higher than the substrate surface and by every
Absciss layer is kept apart with substrate；
Second groove, is formed in the conductive material；
Cantilever material, with the top of air substrate as gap is formed at, the cantilever beam includes moving freely end
And connection end, it is described move freely end lower section be right against the dielectric material, the connection end is filled in the second groove.
Used as a kind of scheme of optimization of MEMS cantilever beam structures of the present invention, the first groove is 3~5, groove
Depth bounds is 2~4 μm.
Used as a kind of scheme of optimization of MEMS cantilever beam structures of the present invention, the cantilever material is hanging in the substrate
Distance of the top more than 3 μm.
Used as a kind of scheme of optimization of MEMS cantilever beam structures of the present invention, the depth of the second groove is 8~12 μm.
As described above, MEMS cantilever beam structures of the invention and preparation method thereof, including step：1) substrate, etching are provided
One end of the substrate forms several first grooves, in the trench filled media material；2) it is heavy in the substrate surface
Product sacrifice layer, etches the other end of the sacrifice layer and substrate, forms contact hole；3) grown on the side wall of the contact hole every
Absciss layer；4) fill conductive material in the contact hole, etch the conductive material and form several second grooves, described the
Cantilever material is filled in two grooves until cantilever material covers conductive material and sacrificial layer surface；5) sacrifice layer, shape are removed
Into cantilever beam structure.MEMS cantilever beam structures of the invention, on the one hand increased first groove and filled media material in the substrate
Material, can reduce the contact area between cantilever beam and substrate, minimizing electrostatic gravitation, so as to prevent the generation of cantilever beam free end
Adhesion；On the other hand, the root connection end of cantilever beam uses Embedded molding structure, can improve root bending torque, drops
Low risk of breakage.
Brief description of the drawings
Fig. 1~Fig. 2 is the Structure and Process schematic diagram for preparing MEMS cantilever beams of prior art.
Fig. 3 is the preparation flow schematic diagram of MEMS cantilever beam structures of the present invention.
Fig. 4~Fig. 8 be MEMS cantilever beam structures preparation method step 1 of the present invention) presentation structural representation.
Fig. 9~Figure 12 be MEMS cantilever beam structures preparation method step 2 of the present invention) presentation structural representation.
Figure 13~Figure 14 be MEMS cantilever beam structures preparation method step 3 of the present invention) presentation structural representation.
Figure 15~Figure 19 be MEMS cantilever beam structures preparation method step 4 of the present invention) presentation structural representation.
Figure 20 be MEMS cantilever beam structures preparation method step 5 of the present invention) presentation structural representation.
Component label instructions
101,101A substrates
102,106,110 photoresists
103 first grooves
104 dielectric materials
105,105A sacrifice layers
107 contact holes
108 separation layers
109 conductive materials
111 second grooves
112,112A cantilever materials
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages of the invention and effect easily.The present invention can also be by specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, component count, shape when only display is with relevant component in the present invention rather than according to actual implementation in schema then
Shape and size are drawn, and it is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its component cloth
Office's kenel is likely to increasingly complex.
The present invention provides a kind of preparation method of MEMS cantilever beam structures, as shown in figure 3, methods described at least includes step
Suddenly：
S1, there is provided substrate, one end for etching the substrate forms several first grooves, in the trench filled media
Material；
S2, in the substrate surface deposition of sacrificial layer, etches the other end of the sacrifice layer and substrate, forms contact hole；
S3, separation layer is grown on the side wall of the contact hole；
S4, fills conductive material in the contact hole, etches the conductive material and forms several second grooves, in institute
Filling cantilever material is until cantilever material covers conductive material and sacrificial layer surface in stating second groove；
S5, removes sacrifice layer, forms cantilever beam structure.
Detailed introduction is done to the preparation method of MEMS cantilever beam structures of the invention with reference to specific accompanying drawing.
Step S1 is first carried out, 4~Fig. 8 of accompanying drawing is referred to, there is provided substrate 101, the one end for etching the substrate 101 is formed
Several first grooves 103, the filled media material 104 in the groove 103.
The substrate 101 can be silicon substrate or SiGe, or other kinds of substrate, such as, on insulator
Silicon (SOI) etc..In the present embodiment, the substrate 101 is silicon substrate.
The substrate 101 can be etched using dry etch process and form first groove 103, as shown in figure 5, in the base
The surface spin coating photoresist 102 of bottom 101, and pattern the photoresist 102 through photoetching processes such as overexposure, developments.Such as Fig. 6 institutes
Show, the substrate 101 is etched using the photoresist 102 of patterning, remove 102 formation first grooves 103 after remaining photoresist.
The first groove 103 is formed in one end of the substrate 101, and the free end with follow-up cantilever beam is corresponding.The first groove
Distance determines that cantilever beam is more long by the length of cantilever beam between 101 quantity and groove, and what groove made more evacuates, cantilever
Liang Yue is short, and it is more intensive that groove makes.Preferably, 3~5 first grooves 103, the depth of first groove 103 are formed in substrate
Degree control is in 2~4 μ ms.
Physical vapour deposition (PVD) or chemical vapor deposition can be used in the filled media material of first groove 103 using physics
104.The process is：As shown in fig. 7, dielectric material covering first groove 103 and the surface of substrate 101 of growth, grind away afterwards
The dielectric material 104 on the surface of substrate 101, forms structure as shown in Figure 8.The dielectric material 104 is silica, certainly
Can be other suitable dielectric materials, such as silicon nitride etc..
Then step S2 is performed, 9~Figure 12 of accompanying drawing is referred to, in the surface deposition of sacrificial layer 105 of the substrate 101, etching
The other end of the sacrifice layer 105 and substrate 101, forms contact hole 107.
Can be using techniques such as low-pressure chemical vapor deposition, plasma enhanced chemical vapor depositions in the substrate 101
Surface forms sacrifice layer 105.The sacrifice layer 105 can be any material that can be removed, and not damage other knots in removal
Structure.In the present embodiment, the sacrifice layer 105 temporarily elects germanium material as.
Formed contact hole 107 detailed process be：In the surface spin coating photoresist 106 of the sacrifice layer 105, and through overexposure
The photoetching processes such as light, development pattern the photoresist 106, obtain structure as shown in Figure 10.Again as shown in figure 11, using figure
The photoresist 106 of case etches the sacrifice layer 105 and substrate 101, forms as shown in figure 12 after removing remaining photoresist 106
Contact hole 107.It should be noted that the contact hole 107 penetrates the substrate 101, to ensure subsequent deposition in contact hole
Conductive material can be electrically connected with the metal wire under substrate 101 (diagram) in 107.
Then step S3 is performed, accompanying drawing 14 is referred to, separation layer 108 is grown on the side wall of the contact hole 107.
Specifically, separation layer 108 can be grown on the side wall of the contact hole 107 using chemical vapor deposition method,
As shown in figure 13, in growth course, the bottom of contact hole 107 and the surface of sacrifice layer 105 can also be deposited last layer separation layer
108, bottom and the separation layer 108 of the excess surface of sacrifice layer 105 using dry etching removal contact hole 107 are obtained as schemed
Structure shown in 14.Using the separation layer 108 grown on the side wall of contact hole 107, cantilever beam short circuit can be prevented.
Then step S4 is performed, 15~Figure 19 of accompanying drawing is referred to, conductive material 109 is filled in the contact hole 107, carved
Lose the conductive material 109 and form several second grooves 111, cantilever material 112 is filled in the second groove 111 straight
Conductive material 109 and the surface of sacrifice layer 105 are covered to cantilever material 112.
As shown in figure 15, conductive material 109 is filled in contact hole 107 using conventional chemical vapor deposition method, is sunk
During product, the surface of sacrifice layer 105 can also deposit last layer conductive material 109, afterwards as shown in figure 16, using dry etching
The conductive material 109 on the surface of sacrifice layer 105 is removed, and makes the surface of conductive material 109 in contact hole 107 and sacrifice layer 105
Surface flushes.
As an example, the conductive material 109 is germanium silicon or polysilicon, it is of course also possible to be other suitable conductions
Material.In the present embodiment, the conductive material 109 is germanium silicon.
The process of formation second groove is in conductive material：In the conductive material 109 and the surface spin coating of sacrifice layer 105
Photoresist 110, and the photoresist 110 is patterned through photoetching processes such as overexposure, developments, obtain structure as shown in figure 17.
Again as shown in figure 18, the conductive material 109 is etched using the photoresist 110 of patterning, removes 110 shapes after remaining photoresist
Into second groove 111.
Accompanying drawing 19 is referred to again, is recycled chemical vapor deposition method to be deposited in the second groove 111 and is formed cantilever
Beam material 112 is until cantilever material 112 covers conductive material 109 and the surface of sacrifice layer 105.
As an example, the cantilever material 112 can be monocrystalline silicon, polysilicon or germanium silicon.It is described in the present embodiment
Cantilever material 112 is germanium silicon.
Step S5 is finally performed, as shown in figure 20, sacrifice layer 105 is removed, cantilever beam structure is formed.
The sacrifice layer 105 can be removed by the way of wet etching.After removal sacrifice layer 105, cantilever material 112
Vacantly, its one end can move freely, and lower section is right against in substrate 101 dielectric material 104 in first groove 103, and preventing should
Hanging cantilever beam is adhered to lower substrates 101；Its other end is incorporated into conductive material 109, forms damascene structures, it is to avoid
The problem of the fracture of root that integral structure of the prior art brings.
Accordingly, the present invention also provides a kind of MEMS cantilever beam structures, as prepared by above-mentioned preparation method, such as Figure 20 institutes
Show, the cantilever beam structure at least includes：
Substrate 101, one end of the substrate 101 forms several first grooves 103, and the other end forms contact hole 107；
Dielectric material 104, is filled in the first groove 103；
Conductive material 109, is filled in the contact hole 107, and the surface of the conductive material 109 is higher than the substrate 101
Surface and kept apart with substrate 101 by separation layer 108；
Second groove 111, is formed in the conductive material 109；
Cantilever material 112, with the top of air substrate 101 as gap is formed at, the cantilever material 112 is wrapped
Include and move freely end and connection end, the end lower section that moves freely is right against the dielectric material 104, and the connection end is filled in
In the second groove 111.
Used as a preferred embodiment, the first groove 103 is provided with 3~5, the depth bounds of first groove 103
It is 2~4 μm.
Used as a preferred embodiment, the cantilever material 112 is hanging to be more than 3 μm in the top of the substrate 101
The thickness of distance, i.e. the air gap is more than 3 μm.
Used as a preferred embodiment, the depth of the second groove 111 is 8~12 μm.
In sum, the present invention provides a kind of MEMS cantilever beam structures and preparation method thereof, including step：1) base is provided
Bottom, one end for etching the substrate forms several first grooves, in the trench filled media material；2) in the substrate
Surface deposition of sacrificial layer, etches the other end of the sacrifice layer and substrate, forms contact hole；3) on the side wall of the contact hole
Growth separation layer；4) conductive material is filled in the contact hole, the conductive material is etched and is formed several second grooves,
Cantilever material is filled in the second groove until cantilever material covers conductive material and sacrificial layer surface；5) removal is sacrificed
Layer, forms cantilever beam structure.MEMS cantilever beam structures of the invention, on the one hand increase first groove and filled media in the substrate
Material, can reduce the contact area between cantilever beam and substrate, minimizing electrostatic gravitation, so as to prevent the hair of cantilever beam free end
Raw adhesion；On the other hand, the root connection end of cantilever beam uses Embedded molding structure, can improve root bending torque,
Reduce risk of breakage.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit such as
Into all equivalent modifications or change, should be covered by claim of the invention.
Claims (11)
1. a kind of preparation method of MEMS cantilever beam structures, it is characterised in that the preparation method at least includes step：
1) substrate is provided, the one end for etching the substrate forms several first grooves, in the trench filled media material；
2) in the substrate surface deposition of sacrificial layer, the other end of the sacrifice layer and substrate is etched, forms contact hole；
3) separation layer is grown on the side wall of the contact hole；
4) fill conductive material in the contact hole, etch the conductive material and form several second grooves, described the
Cantilever material is filled in two grooves until cantilever material covers conductive material and sacrificial layer surface；
5) sacrifice layer is removed, cantilever beam structure is formed.
2. the preparation method of MEMS cantilever beam structures according to claim 1, it is characterised in that：The step 1) middle filling
The process of dielectric material is：Using physical vapour deposition (PVD) or chemical vapor deposition in the trench and substrate superficial growth medium material
Material, grinds away the dielectric material of substrate surface afterwards, and the dielectric material is silica.
3. the preparation method of MEMS cantilever beam structures according to claim 1, it is characterised in that：The step 2) in it is sacrificial
Domestic animal layer is germanium, and the one end for etching the sacrifice layer and substrate using dry etching mode in the step forms contact hole.
4. the preparation method of MEMS cantilever beam structures according to claim 1, it is characterised in that：The step 3) in every
Absciss layer is silica.
5. the preparation method of MEMS cantilever beam structures according to claim 1, it is characterised in that：The step 4) middle filling
Conductive material in the contact hole is germanium silicon.
6. the preparation method of MEMS cantilever beam structures according to claim 1, it is characterised in that：The step 4) middle use
Dry etching mode forms second groove, and the cantilever material is monocrystalline silicon, polysilicon or germanium silicon.
7. the preparation method of MEMS cantilever beam structures according to claim 1, it is characterised in that：The step 5) middle use
The mode of wet etching removes the sacrifice layer.
8. the MEMS cantilever beam structures that prepared by a kind of method described in utilization claim 1, it is characterised in that the MEMS cantilevers
Girder construction at least includes：
Substrate, one end of the substrate forms several first grooves, and the other end forms contact hole；
Dielectric material, is filled in the first groove；
Conductive material, is filled in the contact hole, and the conductive material surface is higher than the substrate surface and by separation layer
Keep apart with substrate；
Second groove, is formed in the conductive material；
Cantilever material, with the top of air substrate as gap is formed at, the cantilever beam includes moving freely end and connects
End is connect, the end lower section that moves freely is right against the dielectric material, and the connection end is filled in the second groove.
9. MEMS cantilever beam structures according to claim 8, it is characterised in that：The first groove is 3~5, first
The depth bounds of groove is 2~4 μm.
10. MEMS cantilever beam structures according to claim 8, it is characterised in that：The cantilever material is hanging described
Distance of the substrate top more than 3 μm.
11. MEMS cantilever beam structures according to claim 8, it is characterised in that：The depth of the second groove is 8~12
μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510016386.XA CN105836697B (en) | 2015-01-13 | 2015-01-13 | MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510016386.XA CN105836697B (en) | 2015-01-13 | 2015-01-13 | MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105836697A CN105836697A (en) | 2016-08-10 |
| CN105836697B true CN105836697B (en) | 2017-05-24 |
Family
ID=56579747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510016386.XA Active CN105836697B (en) | 2015-01-13 | 2015-01-13 | MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105836697B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108002339B (en) * | 2016-11-02 | 2019-12-31 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and manufacturing method thereof |
| WO2018132977A1 (en) * | 2017-01-18 | 2018-07-26 | 中国科学院深圳先进技术研究院 | L-type electrostatic-powered micro robot, and manufacturing method and control method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376787B1 (en) * | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
| JP2008155342A (en) * | 2006-12-26 | 2008-07-10 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing method for micro structure |
| CN101750481A (en) * | 2008-12-12 | 2010-06-23 | 清华大学 | Integrated grating micro-cantilever biochemical sensor and chip manufacturing method |
| CN102158788A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro-electromechanical Systems) microphone and formation method thereof |
| CN103472260A (en) * | 2013-08-15 | 2013-12-25 | 北京时代民芯科技有限公司 | MEMS cross beam capacitor accelerometer and manufacture method thereof |
| CN103848390A (en) * | 2012-11-30 | 2014-06-11 | 台湾积体电路制造股份有限公司 | MEMS structure with adaptable inter-substrate bond |
-
2015
- 2015-01-13 CN CN201510016386.XA patent/CN105836697B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376787B1 (en) * | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
| JP2008155342A (en) * | 2006-12-26 | 2008-07-10 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing method for micro structure |
| CN101750481A (en) * | 2008-12-12 | 2010-06-23 | 清华大学 | Integrated grating micro-cantilever biochemical sensor and chip manufacturing method |
| CN102158788A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro-electromechanical Systems) microphone and formation method thereof |
| CN103848390A (en) * | 2012-11-30 | 2014-06-11 | 台湾积体电路制造股份有限公司 | MEMS structure with adaptable inter-substrate bond |
| CN103472260A (en) * | 2013-08-15 | 2013-12-25 | 北京时代民芯科技有限公司 | MEMS cross beam capacitor accelerometer and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105836697A (en) | 2016-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7982558B2 (en) | Integrated single-crystal MEMS device | |
| US8468665B2 (en) | Methods for making capacitive microphone | |
| US9776853B2 (en) | Reducing MEMS stiction by deposition of nanoclusters | |
| US20060234413A1 (en) | Method for forming anti-stiction bumps on a micro-electro mechanical structure | |
| US8877537B2 (en) | Method for manufacturing MEMS device | |
| US10800649B2 (en) | Planar processing of suspended microelectromechanical systems (MEMS) devices | |
| US20090170231A1 (en) | Method of producing mechanical components of mems or nems structures made of monocrystalline silicon | |
| US8507306B2 (en) | Reduced stiction MEMS device with exposed silicon carbide | |
| TWI680940B (en) | Process to produce microelectromechanical structures in a strata-sequence and a corresponding electronic component with a microelectromechanical structure | |
| US20160052776A1 (en) | Mems device | |
| CN105836697B (en) | MEMS (Micro Electro Mechanical Systems) cantilever structure and manufacturing method thereof | |
| US20130181302A1 (en) | Method for making a suspended membrane structure with buried electrode | |
| US6413793B1 (en) | Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers | |
| US9458008B1 (en) | Method of making a MEMS die having a MEMS device on a suspended structure | |
| CN102539033A (en) | Method for making micro electromechanical system pressure sensor | |
| KR20140091574A (en) | Method of forming wide trenches using a sacrificial silicon slab | |
| CN108341395A (en) | A kind of production method of MEMS device | |
| US9505612B2 (en) | Method for thin film encapsulation (TFE) of a microelectromechanical system (MEMS) device and the MEMS device encapsulated thereof | |
| US9434602B2 (en) | Reducing MEMS stiction by deposition of nanoclusters | |
| CN106241729A (en) | CMOS-MEMS integrating device and manufacture method including contact layer | |
| WO2016044932A1 (en) | Fabrication method for 3d inertial sensor | |
| US9013012B2 (en) | Self-sealing membrane for MEMS devices | |
| CN103910323B (en) | Micro-electromechanical device | |
| US20160289064A1 (en) | Thin Film Encapsulation of Electrodes | |
| CN106018880A (en) | In-plane capacitive acceleration sensor with self-detection function and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |