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Publication numberCN1057392 C
Publication typeGrant
Application numberCN 95109991
Publication date11 Oct 2000
Filing date21 Jul 1995
Priority date21 Jul 1994
Also published asCN1122005A, US5608569, US5841569
Publication number95109991.4, CN 1057392 C, CN 1057392C, CN 95109991, CN-C-1057392, CN1057392 C, CN1057392C, CN95109991, CN95109991.4
Inventors金东局
Applicant大宇电子株式会社
Export CitationBiBTeX, EndNote, RefMan
External Links: SIPO, Espacenet
Improved method for mfg. of array of thin film actuated mirrors
CN 1057392 C
Abstract  translated from Chinese
制造MN薄膜可驱动反射镜阵列方法包括:提供一含有MN个接线端的矩阵,在其顶面上构造一薄膜待除层;去除薄膜待除层中围绕各接线端的部分,在其中形成一支持元件,以形成一支持层;在支持层的顶部形成一弹性层;在支持元件和弹性层内构造一导管;在弹性层的顶部沉积第二薄膜层,在第二薄膜电极和弹性层顶部形成薄膜电致位移层,并使之与弹性层及其上的第一薄膜层分别形成MN个相应的电极和元件图案;去除薄膜待除层,形成要制造的阵列。 Manufacture of M N thin film actuated mirror array comprising: providing a matrix A comprising the M N terminals, which are constructed of a thin film sacrificial layer on its top surface; removing the thin film sacrificial layer around each terminal part, in which forming a supporting member to form a support layer; on top of the support layer is an elastic layer is formed; a conduit configured in the inner support member and the elastic layer; elastic layer is deposited on top of the second thin film layer, the second thin film electrode and an elastic the top layer forming a thin film electrodisplacive layer, aligning them with the first film layer and the elastic layer are formed on the M N respective electrodes and the device pattern; removing the thin film sacrificial layer, forming the array to be manufactured.
Claims(10)  translated from Chinese
1.一种制造用于光学投影系统的薄膜可驱动反射镜阵列的方法,该方法包括以下步骤:提供一个带有一个顶面的有源矩阵,该有源矩阵包含一个位于其顶面的MN接线端阵列、一个基底和一个MN晶体管阵列;在有源矩阵的顶面构造一个薄膜待除层,使得该薄膜待除层完全覆盖MN接线端阵列;去除薄膜待除层中围绕各个接线端的那些部分;通过用第一绝缘材料充填上述那些部分,在每个接线端的周围形成一个支持元件,由此形成一个带有MN支持元件阵列和薄膜待除层的支持层;在支持层的顶部淀积一个由第二绝缘材料做成的弹性层;在每个支持元件中形成一个导管,每个导管都从弹性层的顶部开始,通过相应的支持元件,延伸到相应接线端的顶部;在弹性层的顶部淀积一个由导电材料做成的第二薄膜层;使第二薄膜层形成图案,变为一个MN第二薄膜电极阵列,其中每个第二薄膜电极都与相应的导管有电连接;在MN第二薄膜电极阵列和弹性层的顶部形成一个薄膜电致位移层;对薄膜电致位移层进行热处理,使之发生相变;使薄膜电致位移层形成图案,变为一个MN薄膜电致位移元件阵列,每个薄膜电致位移元件都包围着相应的第二薄膜电极;使弹性层形成图案,变为一个MN弹性元件阵列;在各薄膜电致位移元件、各弹性元件和支持层的顶部淀积一个第一薄膜层;使第一薄膜层形成图案,变为一个MN第一薄膜电极阵列,其中,每个第一薄膜电极都包围着相应的薄膜电致位移元件,并覆盖着相应的弹性元件部分;以及去除薄膜待除层,由此形成MN薄膜可驱动反射镜阵列。 1. A method of manufacturing a thin film for an optical projection system can be mirror array driving method, the method comprising the steps of: providing an active matrix having a top surface, the active matrix including a top surface at its M N terminal array, a substrate and an array of M N transistors; the top surface of the active matrix structure of a thin film sacrificial layer, such that the thin film sacrificial layer completely covers the array of M N terminal; removing the thin film sacrificial layer Those portions of the respective terminals of the surrounding; by those portions of the first insulating material is filled with, in each terminal is formed around a support member, thereby forming a sacrificial layer on a support layer with a M N array and the thin film support member ; on top of the supporting layer by depositing a second insulating material formed of an elastic layer; forming a conduit in each support member, each of the conduits from the top of the elastic layer, through the corresponding support member, extending to the corresponding top terminals; on top of the elastic layer, depositing a second thin film layer made of a conductive material; the second thin film layer is patterned into an M N second thin film electrode array, wherein each of the second thin film electrode are associated with corresponding electrically connecting conduit; the second array at the top of M N thin film electrode and an elastic layer formed of a thin film electrodisplacive layer; a thin film electrodisplacive layer is heat treated, so that the phase transition; the thin film electroluminescent displacement layer is patterned, becomes a M N thin film electrodisplacive element array, each of the thin film electrodisplacive members are surrounded by a corresponding second thin film electrode; the elastic layer is patterned, becomes a M N elastic element array ; in the thin film electrodisplacive member, each of the elastic element and the top support layer is deposited a first thin film layer; the first thin film layer is patterned into an M N first thin film electrode array, wherein each of the first a thin film electrode are surrounded by a corresponding thin film electrodisplacive member, and covered with the corresponding portion of the elastic member; and removing the thin film sacrificial layer to thereby form M N thin film actuated mirror array.
2.根据权利要求1的方法,其中各个第一薄膜电极用既导电又反光的材料做成。 2. A method according to claim 1, wherein each of the first thin film electrode with both conductive and reflective material formed.
3.根据权利要求1的方法,其中各个第一和第二薄膜电极利用溅射法或真空蒸镀法随之以举除法形成。 3. The method according to claim 1, wherein each of the first and second thin film electrode by a sputtering method or a vacuum deposition method followed to give divider formed.
4.根据权利要求1的方法,其中各个薄膜的电致位移元件用压电材料做成。 4. The method according to claim 1, wherein each of the thin film electrical actuation displacement element made of piezoelectric material.
5.根据权利要1的方法,其中各个薄膜电致位移元件用电致伸缩材料做成。 5. The method of claim 1, wherein each of the thin film electrodisplacive member made of electrical electrostrictive material.
6.根据权利要求1的方法,其中各个薄膜电致位移元件利用溶胶-凝胶法或溅射法随之以照相蚀刻法或激光修剪法形成。 6. The method according to claim 1, wherein each of the thin film electroluminescent element displacement sol - gel or sputtering followed photogravure etching or laser trimming method to form.
7.根据权利要求1的方法,其中各个弹性元件用绝缘材料做成。 7. The method according to claim 1, wherein each of the elastic member made of an insulating material.
8.根据权利要求1的方法,其中各个弹性元件利用溶胶-凝胶法、溅射法或CVD(化学汽相淀积)法随之以照相蚀刻法或激光修剪法形成。 8. The method according to claim 1, wherein each of the elastic member by the sol - gel method, a sputtering method or a CVD (chemical vapor deposition) method followed by etching with a photographic method or a laser trimming method is formed.
9.根据权利要求1的方法,其中用以迫使发生相变的热处理在形成了MN薄膜电致位移元件阵列之后进行。 9. The method according to claim 1, wherein the phase change for urging the heat treatment after the formation of the organic displacement element array M N thin film.
10.根据权利要求1的方法,其中用以迫使发生相变的热处理在形成了MN弹性元件阵列之后进行。 10. The method according to claim 1, wherein the phase change for urging the heat treatment in the formation of M N arrays after the elastic member carried.
Description  translated from Chinese
制造薄膜可驱动反射镜阵列的改进方法 An improved method of manufacturing the thin film actuated mirror array

本发明涉及一种光学投影系统,较具体地说,涉及一种制造用于该系统的MN薄膜可驱动反射镜阵列的改进方法。 The present invention relates to an optical projection system, more particularly, relates to a method of manufacturing a thin film for M N of the system can be improved method for driving the mirror array.

在本技术领域内可获得的各种视象显示系统中,已知光学投影系统能够提供大尺度的高质量显示。 Available in the art the various visual display system, an optical projection system is known to provide large-scale, high-quality display. 在这种光学投影系统中,来自一个光源灯的光束被均匀地照明在一个例如MN的可驱动反射镜阵列上,其中的每个反射镜都分别与一个驱动器相连接。 In such an optical projection system, the light beam from a light source lamp is uniformly illuminated in a M N may for example drive the mirror array, wherein each mirror are respectively connected with a drive. 驱动器可以用诸如压电材料或电致伸缩材料的电致位移材料做成,这些材料在施加于其上的电场的作用下将发生形变。 Drive piezoelectric material may be used, such as electric or electrostrictive material displacement caused by elastic material made of these materials under the action of deformation will occur in the electric field is applied thereto.

从各个反射镜反射的光束入射到一个开口,例如一个光学挡板上。 Is incident from the respective light beams reflected by the mirror of an opening, e.g., an optical baffle. 通过在各个驱动器上施加一个电信号,各个反射镜相对于入射光束的位置将发生改变,由此使从各个反射镜反射的光束的光路发生偏转。 By applying an electrical signal on each drive, each of the mirror with respect to the incident light beam will change, thereby deflected from the optical paths of the individual light beams reflected by the mirror. 当各个反射光束的光路改变时,从各个反射镜反射的光束中能通过开口的那部分光量就发生变化,从而调制了光束的强度。 When each of the reflected beam to change the optical path, the amount of that portion of the light from the respective light beams reflected by the mirror through the opening on the change, thereby modulating the intensity of the beam. 通过开口的调制光束经过一个诸如投影透镜那样的适当的光学装置,被传送到一个投影屏幕,从而在其上显示出图象。 Modulated light beam through an opening through a suitable optical device such as a projection lens that, transferred to a projection screen, thereby displaying an image thereon.

图1A至1J示出了制造MN个薄膜可驱动反射镜101的阵列100的过程中所涉及的制造步骤,其中M和N均为整数,该制造步骤已公布于标题为“薄膜可驱动反射镜阵列(THIN FILM ACTUATED MIRROR ARRAY)”、美国专利申请流水号为08/430,628的待批共有美国专利申请中。 1A to 1J illustrates manufacturing the M N thin film actuated manufacturing process of step 100 of the mirror array 101 is involved, where M and N are integers, the manufacturing steps have been published in the title to "thin film actuated mirror array (THIN FILM ACTUATED MIRROR ARRAY) ", U.S. Patent Application Serial No. 08 / 430,628 of the total of pending U.S. patent application.

如图1A所示,该阵列100的制造过程从制备具有一个顶面120的有源矩阵102开始,该有源矩阵102包括一个基底108、一个MN晶体管阵列(未示出)以及一个MN个接线端110的阵列109。 1A, the manufacturing process of the array 100 has a top surface 102 of the active matrix 120 is prepared from the start, the active matrix 102 includes a substrate 108, an array of M N transistors (not shown) and a M a terminal 110 N array 109.

在下一步骤中,在有源矩阵102的顶面120上形成一个薄膜待除层121,如果该薄膜待除层121由金属做成,则它用溅射法或蒸镀法形成;如果该薄膜待除层121由磷硅玻璃(PSG)做成,则它用化学汽相淀积(CVD)法或旋转镀膜法形成;如果该薄膜待除层121由多晶硅做成,则它用CVD法形成,如图1B所示。 In a next step, the top surface 102 of the active matrix 120 is formed of a thin film sacrificial layer 121, if the thin film sacrificial layer 121 is made of metal, it using a sputtering or evaporation method; if the film sacrificial layer 121 is formed of phosphosilicate glass (PSG) made of it, by chemical vapor deposition (CVD) method or a spin coating method is formed; if the thin film sacrificial layer 121 made of polysilicon, it is formed by CVD , as shown in Figure 1B.

接着,如图1C所示,形成一个包含MN个支持元件104的阵列103和薄膜待除层121在内的第一支持层122,其中第一支持层122是这样形成的:利用照相蚀刻法产生一个MN空槽阵列(未示出),使各个空槽分别包围着各个接线端110;并利用溅射法或CVD法在包围着各个接线端110的各个空槽内形成支持元件104。 Subsequently, 1C, forming a support comprising the M N array elements 104 and 103 thin film sacrificial layer 121 including the first supporting layer 122, wherein the first supporting layer 122 is formed by: a photoetching Method to produce an array of M N empty slots (not shown), so that all the empty slots are surrounded by a respective terminal 110; and by a sputtering method or a CVD method surrounds each of the connecting end 110 of each of the empty slots formed support member 104.

在下一步骤中,在含有支持元件104的薄膜待除层121的顶部形成一个由绝缘材料做成的弹性层55。 In a next step, the support member 104 comprising a thin film sacrificial layer 121 is formed on top of an insulating material made of an elastic layer 55.

其后,如图1D所示,在每个支持元件104中用下述方法形成一个由金属做成的导管54:首先用腐蚀法产生一个空洞(未示出),使该空洞从弹性层55的顶部延伸到接线端110的顶部;然后用金属充填该空洞。 Thereafter, as shown in FIG 1D is formed by the following method in each of the support member 104 by a conduit 54 made of a metal: generating a first cavity (not shown) by etching, so that the elastic layer 55 from the cavity extends to the top of the top 110 of the terminal; and then filling the cavity with a metal.

接着,如图1E所示,利用溅射法在含有MN个导体的弹性层55的顶部形成一个由导电材料做成的第二薄膜层123。 Subsequently, as shown in Fig. 1E, by sputtering on top of the elastic layer containing the M N conductor 55 is formed of a second thin film layer 123 made of a conductive material. 该第二薄膜层123通过形成在各个支持元件104中的导体54与MN个晶体管发生电连接。 The second thin film layer 123 are electrically connected by the support member 104 is formed in each of the conductors 54 and the M N transistors occurs.

其后,如图1F所示,利用溶胶-凝胶法、溅射法或CVD法在第二薄膜层123的顶部形成一个由压电材料或电致伸缩材料做成的薄膜电致位移层125,由此形成半完成的驱动结构150。 Thereafter, as shown, by a sol FIG 1F - gel method, a sputtering method or a CVD method on top of the second thin film layer 123 is formed of a thin film caused by a piezoelectric or electrostrictive material made of material caused by the displacement layer 125 thereby forming a semi-complete drive structure 150.

在接着的步骤中,如图1G所示,利用照相蚀刻法或激光修剪法使半完成驱动结构150的弹性层55、第二薄膜层123以及薄膜电致位移层125形成图案,直到包含MN个支持元件的阵列103和薄膜待除层121的第一支持层122暴露出来,由此形成MN个半完成可驱动反射镜结构152的阵列151,其中每个半完成可驱动反射镜结构152都包含一个电致位移层154、一个第二电极层153和一个弹性元件155。 In the subsequent step, as shown in FIG. 1G, using a photolithographic etching method or a laser trimming method to make the semifinished actuating structures 150 of the elastic layer 55, a second thin film layer 123 and the thin film electrodisplacive layer 125 is patterned, up to and including M N number of array 103 and the film support member first sacrificial layer 121 supporting layer 122 is exposed, to thereby form the M N semifinished actuated mirror array 151 structures 152, wherein each of the semifinished actuated mirrors structure 152 contains a electrodisplacive layer 154, a second electrode layer 153 and an elastic member 155.

其后,对每个半完成可驱动反射镜结构152中的电致位移层154进行热处理,使之发生相变。 Thereafter, for each of the semifinished actuated mirror structures 152 electrodisplacive layer 154 is heat-treated, so that the phase transition.

在接着的步骤中,如图1H所示,利用溅射法在每个半完成可驱动反射镜结构152的电致位移层154的顶部形成一个由既导电又反光的材料做成的第一电极层126,以做成MN个可驱动反射镜结构166的阵列164,其中每个可驱动反射镜结构166都含有一个顶面和四个侧面。 In the subsequent step, as shown in FIG. 1H, completed by sputtering in the top half of each structure electrically actuated mirrors 152 induced displacement of the first electrode layer 154 is formed by an electrically conducting and light reflecting material made layer 126, in order to make the M N actuated mirrors 166 in the array structures 164, wherein each structure may be actuated mirrors 166 contains a top surface and four side surfaces.

在下一步骤中,如图1I所示,用由光阻材料、二氧化硅或氮化硅做成的薄膜保护层160完全覆盖每个可驱动反射镜结构的顶面和四个侧面,由此形成MN个被保护的可驱动反射镜结构168的阵列167。 In the next step, as shown in FIG. 1I, a protective layer formed with a thin film of photoresist, silicon dioxide or silicon nitride is formed to completely cover and four side surfaces 160 can drive each of the top surface of the mirror structure, whereby formation of the M N protected actuated mirrors 168 in the array structure 167.

然后,利用蚀刻法除去第一支持层122中的薄膜待除层121。 Then, by etching the first support layer 122 is removed in the thin film sacrificial layer 121. 在除去每个被保护可驱动反射镜结构168中的薄膜待除层121之后,再除去其中的薄膜保护层160,由此形成MN个薄膜可驱动反射镜101的阵列100,如图1J所示。 After removal of each protected actuated mirrors 168 in the structure after the thin film sacrificial layer 121, and then remove the thin film protection layer 160, whereby the M N thin film actuated mirror array 100 101 is formed, as shown in Figure 1J Fig.

在上述制造MN薄膜可驱动反射镜101阵列100的方法中,存在着几个问题。 In the manufacture of M N thin film actuated mirror array 100 101 method, there are several problems. 首先需要提出的是其中要形成薄膜保护层160,这会使得本来已经很复杂的整个制造过程变得更为复杂。 You first need to make is where you want to form a thin film protective layer 160, which would make the already complex throughout the manufacturing process becomes more complicated.

此外,去除第一支持层122中的薄膜待除层121时所使用的蚀刻剂或化学试剂有可能对组成薄膜可驱动反射镜101的薄膜层产生化学侵蚀,使结构的整体性和性能下降,进而使阵列100的整体性能下降。 In addition, removal of the first supporting layer 122 thin film sacrificial etchant or a chemical reagent layer 121 is used when it is possible for the composition of the thin film actuated mirrors to produce a thin film layer 101 to chemical attack, so that the integrity and performance of the structure decreases, thereby enabling the overall performance of the array 100 decreases.

因此,本发明的一个主要目的是,提供一种制造MN薄膜可驱动反射镜阵列的方法,它能够在去除支持层中的薄膜待除层时,最大限度地减小对组成各个薄膜可驱动反射镜的薄膜层的化学侵蚀的可能性。 Accordingly, a primary object of the present invention is to provide a method of manufacturing M N thin film actuated mirror array method, which can remove the support layer when the thin film sacrificial layer, to minimize the composition of each film can be the possibility of chemical attack of the thin film layer of the driving mirror.

根据本发明的一个方面,提供了一种制造薄膜可驱动反射镜阵列的改进方法,该方法包括以下步骤:提供一个带有一个顶面的有源矩阵,该有源矩阵包含一个位于其顶面上的MN接线端阵列、一个基底和一个MN晶体管阵列;在有源矩阵的顶面上构造一个薄膜待除层,使得该薄膜待除层完全覆盖MN接线端阵列;去除薄膜待除层中围绕各个接线端的那些部分;通过用第一绝缘材料充填这些部分,在各个接线端的周围形成支持元件,由此形成一个包括MN支持元件阵列和薄膜待除层的支持层;在支持层顶部淀积一个由第二绝缘材料做成的弹性层;在每个支持元件中形成一个导体,每个导体都从弹性层的顶部开始,通过相应的支持元件,延伸到相应接线端的顶部;在弹性层的顶部淀积一个由导电材料做成的第二薄膜层;使第二薄膜层形成图案,变为MN第二薄膜电极阵列,其中每个第二薄膜电极都与相应的导管有电连接;在MN第二薄膜电极阵列和弹性层的顶部形成一个薄膜电致位移层;对薄膜电致位移层进行热处理,使之发生相变;使薄膜电致位移层形成图案,变为MN薄膜电致位移元件阵列,各个薄膜电致位移元件分别包围着各个第二薄膜电极;使弹性层形成图案,变为MN弹性元件阵列;在薄膜电致位移元件、弹性元件和支持层顶部淀积一个第一薄膜层;使第一薄膜层形成图案,变为MN第一薄膜电极阵列,其中各个第一薄膜电极包围着各个相应的薄膜电致位移元件,并覆盖各个弹性元件的部分;以及,除去薄膜待除层,由此形成MN薄膜可驱动反射镜阵列。 According to one aspect of the present invention, there is provided a method of manufacturing the thin film actuated mirror array improved, the method comprising the steps of: providing an active matrix having a top surface, the active matrix including a top surface thereof is located M N array of terminals on a substrate and an M N transistor arrays; the top surface of the structure of an active matrix thin film sacrificial layer, so that the thin film sacrificial layer is completely covered with an array of M N terminal; Removal thin film sacrificial layer in those portions of the respective terminals around; a first insulating material by filling these portions, the terminals are formed around the respective support member, thereby forming a support member comprising an array of M N thin film sacrificial layer and the support layer ; on top of the support layer by depositing a second insulating material formed of an elastic layer; forming a conductor in each support member, each of the conductors from the top of the elastic layer, through the corresponding support member, extending to a respective terminal top end; on top of the elastic layer depositing a second thin film layer made of a conductive material; the second thin film layer is patterned into M N second thin film electrode array, wherein each of the second thin film electrode are associated with electrically connected to the corresponding conduit; in the second array of top M N thin film electrode and an elastic layer formed of a thin film electrodisplacive layer; a thin film electrodisplacive layer is heat treated, so that the phase transition; the thin film electrodisplacive layer patterned into M N thin film electrodisplacive element array, each of the thin film electrodisplacive member, respectively, each surrounded by a second thin film electrode; patterning the elastic layer, the elastic element into an array of M N; in the thin film electrodisplacive element, the elastic element and the top of the support layer is deposited a first thin film layer; the first thin film layer is patterned into M N first thin film electrode array, wherein each of the first thin film electrode surrounds each respective thin film electrodisplacive element, and covers the portion of each elastic element; and, removing the thin film sacrificial layer to thereby form M N thin film actuated mirror array.

本发明的上述目的和其他目的及特点将通过下面结合附图对优选实施例的说明而变得清楚,在附图中:图1A至1J示出以前公开的说明MN薄膜可驱动反射镜阵列的制造步骤的示意性截面图;以及图2A至2F示出说明本发明的MN薄膜可驱动反射镜阵列的制造方法的示意性截面图。 Previously disclosed Description M N thin film actuated mirrors shown in Fig. 1A to 1J: The above and other objects and features of the present invention will become apparent from the accompanying drawings and the following description of the preferred embodiments, in the drawings a schematic cross-sectional views showing a manufacturing step of the array; and Figure 2A to 2F illustrates legend M N thin film of this invention can drive a schematic sectional view of a method of manufacturing the mirror array.

现在参见图2A至2F,那里根据本发明的优选实施例示出了说明本发明的用于光学投影系统的MN薄膜可驱动反射镜201的阵列200的制造方法的示意性截面图,其中M和N均为整数。 Referring now to Figures 2A to 2F, where according to a preferred embodiment of the present invention shows a description of the array for an optical projection system 201 of the present invention is M N thin film actuated mirrors is a schematic sectional view showing a manufacturing method of 200, wherein M and N are integers. 需要指出,出现在图2A至2F中的相同部分用相同的代号表示。 It is noted that the same part appears in Figures 2A to 2F are indicated by the same reference numerals.

如图2A所示,制造阵列200的过程从制备一个有源矩阵202开始,该矩阵有一个顶面,并含有一个带有一个MN接线端210阵列和一个MN晶体管阵列(未示出)的基底208,其中该基底208用例如玻璃那样的绝缘材料做成。 2A, the process of manufacturing the array 200 from 202 starts preparing an active matrix, the matrix having a top surface, and comprising an M N 210 having an array of M N transistors and an array of terminals (not shown a) a substrate 208, wherein the substrate 208, for example made of glass as an insulating material.

其后,在有源矩阵202的顶面形成一个薄膜待除层221,其厚度为1μm-2μm,由诸如铜(Cu)、镍(Ni)那样的金属或磷硅玻璃(PSG)或多晶硅做成。 Thereafter, the top surface of the active matrix 202 is formed of a thin film sacrificial layer 221 having a thickness of 1μm-2μm, by such as copper (Cu), nickel (Ni) as metals or phosphosilicate glass (PSG) or polycrystalline silicon do a. 如果该薄膜待除层221由金属做成;则它利用溅射法或蒸镀法形成;如果它由PSG做成,则利用化学汽相淀积(CVD)法或旋转镀膜法形成;如果它由多晶硅做成,则利用CVD法形成。 If the thin film sacrificial layer 221 made of metal; it is formed by a sputtering method or an evaporation method; if it is made of PSG, the use of chemical vapor deposition (CVD) method or a spin coating method; if it made of polysilicon, is formed by a CVD method.

接着,形成一个由一个MN支持元件204的阵列和薄膜待除层221组成的支持层222。 Subsequently, the formation of a sacrificial layer 222 supporting layer 221 composed by a support member 204 of M N arrays and films. 该支持层222是这样形成的:利用照相蚀刻法产生一个MN空槽阵列(未示出),使各个空槽位于各个相应接线端210的周围;利用溅射法或VCD法在位于各个接线端210周围的各个空槽中形成由例如氮化硅那样的第一绝缘材料做成的支持元件204。 The supporting layer 222 is formed by: generating a M N array of empty slots (not shown) using a photolithographic etching method, so that all the empty slots being located around each of the corresponding terminals 210; by sputtering or VCD method located in various each of the empty slots is formed around the terminal 210 by, for example of silicon nitride as the first insulating material 204 made of the support member.

如图2B所示,利用溶胶-凝胶法、溅射法或CVD法在支持层222的顶部形成一个弹性层105,它由例如氮化硅那样的第二绝缘材料做成,厚度为500A-2000A。 2B, the sol - gel method, a sputtering method or a CVD method on top of the supporting layer 222 is formed of an elastic layer 105, composed for example of silicon nitride formed as a second insulating material, having a thickness of 500A- 2000A.

其后,形成一个MN导体104的阵列,其中每个导体104都由例如铝(Al)那样的金属做成,用来向各个相应的可驱动反射镜201提供电信号。 Thereafter, the formation of an M N array of conductor 104, wherein each of the conductors 104 by, e.g., aluminum (Al) as a metal made, for providing an electrical signal corresponding to the respective actuated mirrors 201. MN导体104阵列是这样形成的:首先用蚀刻法产生一个MN空洞阵列(未示出),每个空洞都从弹性层105的顶部开始,通过相应的支持元件204,延伸到相应的接线端210的顶部;然后用溅射法以金属充填这些空洞。 M N array of conductor 104 is formed by: generating an M N first empty array (not shown) by etching, from the top of each cavity has an elastic layer 105, 204, extending through the corresponding support element to the corresponding top terminals 210; and then by sputtering to fill these voids metal.

接着,用溅射法或真空蒸镀法在弹性层105的顶部形成一个第二薄膜层223,它由诸如铂(pt)或铂/钛(Pt/Ti)合金那样的导电材料做成,厚度为0.1μm-2μm。 Next, using a sputtering or a vacuum evaporation method in a second thin film layer 223 is formed on top of the elastic layer 105, which consists of such as platinum (pt) or platinum / titanium (Pt / Ti) alloy as a conductive material made of, the thickness of the for 0.1μm-2μm.

在下一步骤中,如图2C所示,利用举除法使第二薄膜层223形成图案,变为一个MN第二薄膜电极233的阵列,其中各个第二薄膜电极233通过相应的导体104与相应的晶体管发生电连接。 In the next step, shown in Figure 2C, the use of lift of the second thin film layer 223 division patterned into an array of M N second thin film electrodes 233, wherein each of the second thin film electrodes 233 and 104 through respective conductors the corresponding transistor is electrically connected to happen. 各个第二薄膜电极233的功能是作为薄膜可驱动反射镜201的信号电极。 The function of each second thin film electrode 233 as a thin film actuated mirrors 201 in the signal electrode.

其后,如图2D所示,利用溶胶--凝胶法或溅射法在弹性层105和MN第二薄膜电极233阵列的顶部形成一个薄膜电致位移层225,它由例如钛酸铅锆(PZT)那样的压电材料或例如铌酸铅镁(PMN)那样的电致伸缩材料做成,厚度为0.1μm~2μm。 Thereafter, shown in Figure 2D, the sol - gel method or a sputtering method on top of the elastic layer 233 of the array 105, and M N second thin film electrode to form a thin film electrodisplacive layer 225, which consists of e.g. titanate lead zirconate (PZT) as a piezoelectric material or, for example, lead magnesium niobate (PMN) as electrostrictive material made of a thickness of 0.1μm ~ 2μm. 然后对该薄膜电致位移层225进行热处理,使之发生相变。 Then caused the displacement of the thin film layer 225 is heat-treated, so that the phase transition occurs.

如图2E所示,利用照相蚀刻法或激光修剪法使薄膜电致位移层225形成图案,变为一个MN薄膜电致位移元件235的阵列,其中各个薄膜电致位移元件235包围着相应的第二薄膜电极233。 2E, using a photolithographic etching method or a laser trimming method the thin film electrodisplacive layer 225 is patterned into an array of M N thin film electrically induced displacement element 235, wherein each of the thin film electrodisplacive member 235 surrounds the corresponding The second thin film electrode 233. 其后,利用照相蚀刻法或激光修剪法使弹性层105形成图案,变为一个MN弹性元件205的阵列,由此使支持层222的一部分暴露出来。 Thereafter, using a photolithographic etching method or a laser trimming method of the elastic layer 105 is patterned into an array of M N of the elastic member 205, whereby a portion of the supporting layer 222 is exposed. 由于各个薄膜电致位移元件235都是足够地薄的,当它们由压电材料组成时可以在薄膜可驱动反射镜201的工作过程中由所施加的电信号来极化,所以这里不必对它们进行极化。 Since each of the thin film electrodisplacive members 235 is sufficiently thin, as they may be composed of a piezoelectric material actuated mirrors 201 in the work process by an electrical signal applied to the polarization in the film, so here they do not have polarization. 用以迫使发生相变的热处理也可以在形成了MN薄膜电致位移元件235之后或在形成了MN弹性元件205之后进行。 For forcing the phase transition in the heat treatment may be formed of M N thin film electrodisplacive member 235 or after the formation of the M N after the elastic member 205.

在下一步骤中,利用溅射法或真空蒸镀法在薄膜电致位移元件235、弹性单元205、以及支持层222的暴露部分的顶部形成一个第一薄膜层(未示出),它由诸如铝(Al)、金(Au)或铂(Pt)那样的既导电又反光的材料做成,厚度为500A-1000A。 In the next step, by a sputtering method or a vacuum evaporation method in the thin film electrodisplacive member 235, 205, 222 and a top support layer exposed portions of the elastic element forming a first thin film layer (not shown), such as that from aluminum (Al), conducting and light reflecting material of gold (Au) or platinum (Pt) formed as a thickness of 500A-1000A.

其后,用举除法使第一薄膜层形成图案,变为一个MN第一薄膜电极226的阵列,其中每个第一薄膜电极226都包围着相应的薄膜电致位移元件235,并覆盖了相应的弹性元件205的部分。 Thereafter, the division of the first film layer held patterned into an array of M N first thin film electrodes 226, wherein each of the first thin film electrode 226 are surrounded by a corresponding thin film electrodisplacive member 235, and cover the corresponding portion of the elastic member 205. 各个第一薄膜电极226在薄膜可驱动反射镜201中起着反射镜和偏置电极的作用。 Each of the first thin film electrode 226 to drive the mirror 201 plays a mirror and a bias electrode in the thin film.

接着,利用蚀刻法去除薄膜待除层221,由此形成MN薄膜可驱动反射镜201的阵列200,如图2F所示。 Next, remove the film by an etching method sacrificial layer 221, thereby forming an array of M N thin film actuated mirrors 201, 200, shown in Figure 2F.

和以前公开的制造MN薄膜可驱动反射镜阵列的方法不同,在本发明的方法中,各个第一薄膜电极226都包围了相应的薄膜电致位移元件235并覆盖了相应弹性元件205的暴露部分,这防止了在去除支持层222中的薄膜待除层221时对各个薄膜层的化学侵蚀。 And previously disclosed manufacturing M N thin film actuated mirror array of different methods, in the method of the present invention, each of the first thin film electrode 226 are surrounded by a corresponding thin film electrodisplacive member 235 and cover 205 of the corresponding elastic element exposed portion, which prevents the removal of the film support layer 222 on the sacrificial layer 221 when the chemical erosion of various thin film layers.

尽管只通过某些优选实施例对本发明进行了说明,但在不偏离所附权利要求所规定的本发明的范畴的情况下,可以做出各种其他的修改和变化。 Although only the case of certain preferred embodiments of the present invention has been described, but without departing from the scope defined in the appended claims the present invention may be made of a variety of other modifications and variations.

Classifications
International ClassificationG02B26/08, H01L21/203, G02F1/015
Cooperative ClassificationY10S359/90, Y10S359/904, G02B26/0858
European ClassificationG02B26/08M4P
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