CN1057351C - 硅片热处理的方法 - Google Patents

硅片热处理的方法 Download PDF

Info

Publication number
CN1057351C
CN1057351C CN95116613A CN95116613A CN1057351C CN 1057351 C CN1057351 C CN 1057351C CN 95116613 A CN95116613 A CN 95116613A CN 95116613 A CN95116613 A CN 95116613A CN 1057351 C CN1057351 C CN 1057351C
Authority
CN
China
Prior art keywords
silicon chip
silicon
metal
thermal treatment
hydrofluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN95116613A
Other languages
English (en)
Other versions
CN1127805A (zh
Inventor
S·佩洛兹
L·W·施夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of CN1127805A publication Critical patent/CN1127805A/zh
Application granted granted Critical
Publication of CN1057351C publication Critical patent/CN1057351C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
    • H01L21/31675—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Abstract

公开了一种硅片热处理的方法，包括用含氢氟酸的水溶液与硅片表面接触，以从硅片表面除去金属；用臭氧水与氢氟酸处理过的硅片接触以在硅片表面上生长亲水性氧化物层，和加热用臭氧水处理过的硅片到至少约300℃的温度并至少保持约1秒钟的时间，热处理开始时硅片表面上的铁、铬、钙、钛、钴、锰、锌和钒各自的浓度小于1×109原子/cm2。

Description

硅片热处理的方法
本发明涉及一种硅片热处理方法，更具体地讲，涉及的方法包括在热处理前清洗硅片，以减少对少数载流子寿命影响。
单晶硅片的制备通常包括以下步骤：生长单晶硅块，将硅块切成薄片、研磨、酸洗(etching)和抛光薄片。根据电子元件生产者的特殊要求，可再对硅片进行附加的热处理，如氧施主湮灭退火处理、控制氧析出的热处理、低温CVD氧化处理、外延沉积、多晶硅沉积等。
在这些热处理步骤中，硅片要在至少约300℃温度下保持至少约1秒钟。在这些条件下，存在于硅片表面的金属如铁可受驱使而进入硅晶体的晶格中，这样就会降低硅块中少数载流子的寿命。因此，理想的是在硅片进行热处理步骤之前，使其表面没有金属。
在许多应用场合，最好能使要进行热处理的硅片具有亲水性的表面。但是，到现在为止，这还没有实现。与用来生长亲水性氧化硅表层的常规方法相关的各种限制使得生长金属(如铁和铬)浓度小于1×1011原子/cm2的亲水性氧化硅层变得不现实。因此，通常在热处理之前将硅片上的氧化层除去。但是，这种方法也有其缺点，具有疏水性表层的硅片容易在局部受到污染。
因此，在本发明的目的中，一是提供一种热处理硅片的方法，在该方法中硅片具有亲水性的二氧化硅表层，并且在这种方法中，硅片的少数载流子寿命不因为在热处理步骤中伴随氧化硅层的金属污染物被驱赶进入硅块中而降低。
因此，简而言之，本发明涉及一种热处理硅片的方法。该方法包括以下步骤：用一种含氢氟酸的水溶液与硅片的表面接触以从硅片表面除去金属，用臭氧水(ozonated water)与氢氟酸处理过的硅片接触以在硅片表面生长亲水性氧化物层，并加热用臭氧水处理过的硅片到至少约300℃的温度并何持至少约1秒钟。热处理开始时硅片表面上的铁、铬、钙、铁、钴、锰、锌和钒的浓度小于1×109原子/cm2。
在下文中可以看出本发明的其它目的。
本发明人惊奇地发明了一种热处理前的清洗方法，它能制出具有亲水性氧化硅表层、并且任何金属的表面浓度不超过约1×109原子/cm2的硅片。其中的金属指对硅的少数载流子的寿命有影响的那些金属，包括铁、铬、钙、钛、钴、锰、锌和钒，尤其是铁、铬和钛。因此，根据本发明预处理的硅片在进行热处理后，其少数载流子的寿命将不会明显降低。
优选地，本发明的热处理前的清洗方法包括以下步骤：预清洗(对那些受金属或有机膜等严重污染的硅片而言)，除去金属，漂洗，氧化物生长，以及干燥。
可将硅片浸入本领域熟练技术人员公知的清洗溶液中的任何一种来进行预清洗。清洗溶液包括piranha混合物(硫酸和过氧化氢的混合物)和SC-1混合物。SC-1清洗溶液含大约1000∶1∶1至1∶1∶1(体积份)的H2O∶H2O2∶NH4OH，优选地约100∶1∶1至约5∶1∶1(体积份)的H2O∶H2O2∶NH4OH，(由30-35wt％的H2O2水溶液和28-30％(重量)的NH4OH水溶液配制)，并且其温度约0℃-约100℃，优选地约25℃-约90℃。通过氢氧化氨的溶解作用和过氧化氢的强氧化作用，SC-1可除去有机污染物和颗粒。氢氧化氨还起到与金属如铜、金、镍、钴、锌和钙络合的作用。
通过使硅片与含大约1∶1到1∶10000(体积份)的HF∶H2O的水溶液(以49％(重量)的HF水溶液配制)接触来除去硅片上的金属。为了促进金属的除去作用，上述溶液中还可含有HCl(1∶1∶0至1∶1∶10000(体积份)的HF∶HCl∶H2O，用36.5-38％(重量)HCl的水溶液配制)，H2O2(1∶1∶0至1∶1∶10000(体积份)的HF∶H2O2∶H2O；由30-35％(重量)H2O2的水溶液配制)，或臭氧(约0.1至约50ppm)。优选地，上述除去金属的溶液含约5∶40∶400(体积份)的HF∶HCl∶H2O(由40％(重量)的HF水溶液，36.5-38％(重量)HCl的水溶液配制)。该溶液可以是约10℃-约90℃温度，优选地是约25℃-约60℃，并且将硅片浸于上述溶液的流动槽中至少保持0.1分钟，优选约2分钟至10分钟。这些溶液有效地除去了碱金属或过渡金属，并通过形成可溶性金属络合物来防止它们从溶液中重新沉积。
在除去金属之后，将硅片在去离子水中漂洗至少约0.1分钟，通常约2分钟至约10分钟。优选地，去离子水的电阻率约3至18兆欧·厘米，最好大于约17兆欧·厘米。
将漂洗过的硅片与高纯臭氧水(即含臭氧和不超过约0.1ppb(重量/体积)的铁、铬、钛及其它将降低硅片少数载流子寿命的金属的去离子水)接触，以制成具有亲水性氧化物表层的硅片。得到的氧化硅层优选具有约0.6至约1.5纳米的厚度，并且铁、铬、铁和其它会降低硅片少数载流子寿命的金属各自的浓度不超过1×109原子/cm2，优选不超过约1×108原子/cm2。通过将硅片浸于约0℃到约60℃，优选地处于室温下的含约0.1ppm至50ppm的臭氧，优选约10-约15ppm臭氧的水浴中，保持至少约0.1分钟，优选地约2分钟至约10分钟的时间，即可制得具有上述厚度和纯度的氧化硅层。任选地，臭氧水可附加含有酸∶水的体积比约为1∶1000至约1∶1的盐酸或硝酸。
如果臭氧浴是无酸的，处理过的硅片可以直接干燥。但是，如果臭氧浴中含盐酸或硝酸，处理过的硅片应该在去离子水中漂洗至少约0.1分钟、通常为2分钟至10分钟的时间，其中的去离子水电阻率约3-18兆欧·厘米，优选地大于约17兆欧·厘米。
热处理前清洗方法的最后一步是干燥氧化的硅片。硅片可用任何方法干燥，只要这种方法不会使金属或其它杂质重新污染硅片。这些方法包括常规的本领域众所周知的旋转干燥或异丙醇蒸发干燥技术。
理想地，热处理前的清洗过程是在常规的湿操作台式清洗装置中进行，这种装置包括一系列的含约1至100升流动溶液的槽。此外，优选地，控制该方法使得装有许多硅片，例如不超过100片的盒子自动地传送并浸入预清洗浴，臭氧浴等。所有湿润的部件都由石英、聚氯乙烯(“PVC”)，聚偏二氟乙烯(“PVDF”)，聚丙烯或特氟隆构成。
在热处理前的清洗处理完成之后，将干燥的硅片送入炉子，如快速热退火炉或其它可进行热处理步骤的装置中。任选地，热处理前的清洗工艺中的干燥站可以与热处理装置结合在一起。也就是说，优选地使硅片直接从干燥站传送到炉子中以避免硅片被金属和其它杂质重新污染。如果不能实现直接传送，则应特别小心防止干燥的硅片与其它装置或流体接触，从而导致硅片表面具有超过1×108原子/cm2的铁、铬、钛和其它会降低少数载流子寿命的金属。
通常，在抛光之前，硅片要进行氧施主湮灭退火，控制氧析出的热处理，低温CVD氧化和氮化，多晶硅的沉积以及其它热处理步骤。因此，根据本发明，这些热处理步骤可使用基本上无金属的具有亲水性表面的硅片来进行，从而制得与用常规技术处理的硅片相比具有改进的少数载流子寿命的硅片。
二氧化硅是亲水性的，因此很容易被水湿润，而硅的表面是疏水性的。可以参考水滴在表面的接触角来确定硅片的亲水性和疏水性程度。在本文中，如果接触角小于30°，认为表面是亲水性的，若接触角大于30°，则认为表面是疏水性的。优选地，本文指的亲水性表面是指接触角小于10°，更优选地，接触角约为3°至5°。
根据用来测定亲水性硅片表面上金属浓度的分析手段，本文测得的浓度包括位于二氧化硅表面的金属、混入二氧化硅内的金属、及位于二氧化硅/硅界面的金属总和。测定硅片表面杂质的方法对本领域技术人员是公知的。例如，采用Ruth，K.，Schmidt，P.，Coria，J.，和Mori，E，等人在Proceeding of ECS Fall Meeting，Electrochemical Society 1993(Vol.II)P.488，公开的方法测定硅表面的金属含量，该文献引入本文作为参考。
可用各种手段来测量硅片中少数载流子复合寿命(或少数载流子的扩散长度)，通常是通过光的闪烁或电压脉冲等方式向硅片试样中喷射载流子，并观察它们的湮灭。一种用来测定少数载流子重复合寿命的方法是Zoth和Bergholz在J.Appl.phys.，67，6764(1990)中叙述的表面光电压(SPV)技术。任选地，可以用GeMeTec(Munich，Germany)生产的ELYMAT仪器来测量扩散长度，它测量了用激光扫描束产生的光电流的约1mm的分辩率，并用稀HF电解质收集。由这些数据可计算出少数载流子的扩散长度，并作出扩散长度图。参见例如，H.Feoll等人，Proc.ESSDERCConference，Berlin 1989，P.44，使用已知的公式可将计算出的扩散长度值转化为少数载流子的复合寿命。
下面的实施例说明了本发明。实施例
使用常规的湿操作台式清洗装置，对电阻率为0.8-1.1欧姆·厘米的光滑、酸洗过的P-型硅片进行清洗。对第一组硅片(“A”)的清洗程序如下：
1.在SC-1配料溶液(1∶10∶50的NH4OH∶H2O2∶H2O)中于70℃下，带超声波清洗10分钟；
2.水漂洗5分钟；
3.在除去金属的溶液中洗5分钟(1∶10∶100的HF∶HCl∶H2O)；
4.流水漂洗5分钟，
5.在流动的臭氧水浴(14ppm O3；每种金属含量小于0.01ppb)中浸5分钟；
6.用IPA(异丙醇)干燥10分钟；和
7.通过氮气氛下的快速热退火炉(750℃，4秒钟)处理。
第二组硅片(B)进行步骤1-4和步骤7的处理(步骤1中无超声波)。
对A组和B组硅片进行分析，用酸滴/感应耦合等离子体/质谱测定铁的表面密度，用Elymat测定少数载流子寿命，用SPV测定少数载流子扩散长度。结果列于表I。
                     表I
                       A组         B组
铁密度(原子/cm2)    8×108    1×109扩散长度(微米)       450        460寿命(微秒)           ＞350      ＞200
尽管为了说明本发明之目的详细叙述了代表性的实施方案，但在不背离本发明范围的前提下，本领域熟练技术人员可对本发明进行各种改变和改进。

Claims (1)

1.一种硅片热处理的方法，包括：
用含氢氟酸的水溶液与硅片表面接触，以从硅片表面除去金属；
用臭氧水与氢氟酸处理过的硅片接触以在硅片表面上生长亲水性氧化物层，使得热处理开始时硅片的氧化硅表层上的铁、铬、钙、钛、钴、锰、锌和钒各自的浓度小于1×109原子/cm2，和
加热用臭氧水处理过的硅片到至少约300℃的温度并至少保持约1秒钟的时间。
CN95116613A 1994-08-26 1995-08-25 硅片热处理的方法 Expired - Fee Related CN1057351C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/296,537 US5516730A (en) 1994-08-26 1994-08-26 Pre-thermal treatment cleaning process of wafers
US296,537 1994-08-26
US296537 1994-08-26

Publications (2)

Publication Number Publication Date
CN1127805A CN1127805A (zh) 1996-07-31
CN1057351C true CN1057351C (zh) 2000-10-11

Family

ID=23142435

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95116613A Expired - Fee Related CN1057351C (zh) 1994-08-26 1995-08-25 硅片热处理的方法

Country Status (6)

Country Link
US (2) US5516730A (zh)
EP (1) EP0701275B1 (zh)
JP (1) JPH0878377A (zh)
KR (1) KR100208868B1 (zh)
CN (1) CN1057351C (zh)
DE (1) DE69532060T2 (zh)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2760418B2 (ja) * 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
US5516730A (en) * 1994-08-26 1996-05-14 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process of wafers
KR970023890A (zh) * 1995-10-05 1997-05-30
FR2742924B1 (fr) * 1995-12-22 1998-03-20 Jorge Luis Regolini Procede de depot selectif d'un siliciure de metal refractaire sur du silicium et plaquette de silicium metallisee par ce procede
US5811334A (en) * 1995-12-29 1998-09-22 Advanced Micro Devices, Inc. Wafer cleaning procedure useful in the manufacture of a non-volatile memory device
KR100207469B1 (ko) * 1996-03-07 1999-07-15 윤종용 반도체기판의 세정액 및 이를 사용하는 세정방법
US6245155B1 (en) 1996-09-06 2001-06-12 Arch Specialty Chemicals, Inc. Method for removing photoresist and plasma etch residues
JP4066202B2 (ja) * 1996-10-04 2008-03-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェハの製造方法
US5803980A (en) * 1996-10-04 1998-09-08 Texas Instruments Incorporated De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue
US5919311A (en) * 1996-11-15 1999-07-06 Memc Electronic Materials, Inc. Control of SiO2 etch rate using dilute chemical etchants in the presence of a megasonic field
JPH10154713A (ja) * 1996-11-22 1998-06-09 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理方法およびシリコンウエーハ
US5882425A (en) * 1997-01-23 1999-03-16 Semitool, Inc. Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching
US20030209514A1 (en) * 1997-04-04 2003-11-13 Infineon Technologies North America Corp. Etching composition and use thereof with feedback control of HF in BEOL clean
JPH10309666A (ja) * 1997-05-09 1998-11-24 Speedfam Co Ltd エッジポリッシング装置及びその方法
US5913103A (en) * 1997-05-13 1999-06-15 Integrated Device Technology, Inc. Method of detecting metal contaminants in a wet chemical using enhanced semiconductor growth phenomena
JP3037915B2 (ja) * 1997-09-09 2000-05-08 キヤノン販売株式会社 半導体装置の製造方法
KR100495653B1 (ko) * 1997-09-24 2005-09-30 삼성전자주식회사 웨이퍼세정방법
FR2769248B1 (fr) * 1997-10-06 2000-01-28 St Microelectronics Sa Procede de nettoyage post-polissage mecano-chimique d'une couche d'oxyde ou de nitrure deposee sur un substrat
US5972802A (en) * 1997-10-07 1999-10-26 Seh America, Inc. Prevention of edge stain in silicon wafers by ozone dipping
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
US6100198A (en) * 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
JP2002510752A (ja) * 1998-04-06 2002-04-09 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド フォトレジストとプラズマエッチ残滓の除去方法
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
US5858861A (en) * 1998-05-15 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing nitride residue by changing the nitride film surface property
JP4200565B2 (ja) * 1998-06-24 2008-12-24 日立金属株式会社 電子部品の洗浄方法
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE19853486A1 (de) 1998-11-19 2000-05-31 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Behandlung von Halbleiterscheiben
JP4367587B2 (ja) * 1998-12-01 2009-11-18 財団法人国際科学振興財団 洗浄方法
US6534381B2 (en) * 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
KR100322880B1 (ko) * 1999-06-26 2002-02-09 박종섭 Ｈｓｇ의 ｔｅｍ분석용 시편 핸드링 장치 및 그를 이용한 시편 에칭 방법
US6230720B1 (en) * 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
US6982006B1 (en) 1999-10-19 2006-01-03 Boyers David G Method and apparatus for treating a substrate with an ozone-solvent solution
AU1340301A (en) * 1999-10-19 2001-04-30 Phifer Smith Corporation A method and apparatus for treating a substrate with an ozone-solvent solution
US6371134B2 (en) 2000-01-31 2002-04-16 Advanced Micro Devices, Inc. Ozone cleaning of wafers
JP2003526936A (ja) 2000-03-13 2003-09-09 シーエフエムテイ・インコーポレーテツド 電子部品処理用の方法及び装置
US6190062B1 (en) 2000-04-26 2001-02-20 Advanced Micro Devices, Inc. Cleaning chamber built into SEM for plasma or gaseous phase cleaning
US6794229B2 (en) 2000-04-28 2004-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
US7364625B2 (en) * 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6890861B1 (en) 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
TW527443B (en) * 2000-07-28 2003-04-11 Infineon Technologies Corp Etching composition and use thereof with feedback control of HF in BEOL clean
AU2001286453A1 (en) * 2000-08-11 2002-02-25 Chem Trace Corporation System and method for cleaning semiconductor fabrication equipment parts
TW464966B (en) * 2000-08-17 2001-11-21 Macronix Int Co Ltd Semiconductor wafer clean method to prevent corrosion of metal silicide layer
KR100386083B1 (ko) * 2000-09-22 2003-06-02 주식회사 하이닉스반도체 반도체 기판의 표면결함을 줄이는 방법
US6488038B1 (en) * 2000-11-06 2002-12-03 Semitool, Inc. Method for cleaning semiconductor substrates
US20110263126A1 (en) 2000-11-22 2011-10-27 Sumco Corporation Method for manufacturing a silicon wafer
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6638365B2 (en) * 2001-10-09 2003-10-28 Chartered Semiconductor Manufacturing Ltd. Method for obtaining clean silicon surfaces for semiconductor manufacturing
KR100422905B1 (ko) * 2001-10-31 2004-03-16 아남반도체 주식회사 반도체 소자 제조 방법
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
AU2003220446A1 (en) * 2002-04-17 2003-11-03 Lam Research Corporation Silicon parts for plasma reaction chambers
DE10239773B3 (de) * 2002-08-29 2004-02-26 Wacker Siltronic Ag Halbleiterscheibe und Verfahren zur Reinigung einer Halbleiterscheibe
AU2003276093A1 (en) * 2002-10-14 2004-05-04 Sez Ag Method for generating oxide layers on semiconductor substrates
US7045072B2 (en) 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids
DE10349073A1 (de) * 2003-10-14 2005-05-19 Rolls-Royce Deutschland Ltd & Co Kg Hohlfanschaufel für Flugzeugtriebwerke und Verfahren zu deren Herstellung
US7754609B1 (en) 2003-10-28 2010-07-13 Applied Materials, Inc. Cleaning processes for silicon carbide materials
US7041226B2 (en) * 2003-11-04 2006-05-09 Lexmark International, Inc. Methods for improving flow through fluidic channels
US20050130420A1 (en) * 2003-12-10 2005-06-16 Huang Chih Y. Cleaning method using ozone DI process
FR2868599B1 (fr) * 2004-03-30 2006-07-07 Soitec Silicon On Insulator Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur
US20050253313A1 (en) * 2004-05-14 2005-11-17 Poco Graphite, Inc. Heat treating silicon carbide articles
US7052553B1 (en) * 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
US20060131276A1 (en) * 2004-12-17 2006-06-22 Johnston Steven W Uniformity in batch spray processing using independent cassette rotation
JP2007207791A (ja) * 2006-01-31 2007-08-16 Fujitsu Ltd 半導体装置の製造方法
KR101432161B1 (ko) * 2006-11-01 2014-08-20 퀀텀 글로벌 테크놀로지스, 엘엘씨 챔버 부품을 세정하기 위한 방법 및 장치
US8741066B2 (en) * 2007-02-16 2014-06-03 Akrion Systems, Llc Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting
DE102007039626A1 (de) * 2007-08-22 2009-02-26 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
KR101240333B1 (ko) * 2007-08-24 2013-03-07 삼성전자주식회사 마스크 표면에 흡착된 이온 분석 장치 및 방법
CN101752213B (zh) * 2008-12-08 2011-09-07 北京有色金属研究总院 一种消除硅片表面水雾的低温热处理工艺
US20110079250A1 (en) * 2009-10-01 2011-04-07 Mt Systems, Inc. Post-texturing cleaning method for photovoltaic silicon substrates
US8334161B2 (en) 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
US10026642B2 (en) 2016-03-07 2018-07-17 Sunedison Semiconductor Limited (Uen201334164H) Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereof
CN105932097A (zh) * 2016-05-13 2016-09-07 浙江晶科能源有限公司 一种硅片的氧化方法
EP3818051B1 (en) 2018-07-05 2022-08-03 Bayer Aktiengesellschaft Substituted thiophenecarboxamides and analogues as antibacterials agents
US20210387964A1 (en) 2018-10-18 2021-12-16 Bayer Aktiengesellschaft Heteroarylaminoquinolines and analogues
CN111681991A (zh) * 2020-06-19 2020-09-18 西安微电子技术研究所 一种多晶硅表面粗糙度的处理方法
WO2023104714A1 (en) 2021-12-10 2023-06-15 Syngenta Crop Protection Ag Pesticidally active pyridazinone compounds
WO2023213626A1 (en) 2022-05-03 2023-11-09 Bayer Aktiengesellschaft Use of (5s)-3-[3-(3-chloro-2-fluorophenoxy)-6-methylpyridazin-4-yl]-5-(2-chloro-4-methylbenzyl)-5,6-dihydro-4h-1,2,4-oxadiazine for controlling unwanted microorganisms
WO2024068519A1 (en) 2022-09-28 2024-04-04 Bayer Aktiengesellschaft 3-(hetero)aryl-5-chlorodifluoromethyl-1,2,4-oxadiazole as fungicide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
US5219613A (en) * 1990-06-13 1993-06-15 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for producing storage-stable surfaces of polished silicon wafers

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3540469A1 (de) * 1985-11-14 1987-05-21 Wacker Chemitronic Verfahren zum schutz von polierten siliciumoberflaechen
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
US4863561A (en) * 1986-12-09 1989-09-05 Texas Instruments Incorporated Method and apparatus for cleaning integrated circuit wafers
DE3818714A1 (de) * 1988-06-01 1989-12-14 Wacker Chemitronic Verfahren zur nasschemischen oberflaechenbehandlung von halbleiterscheiben
DE3823765A1 (de) * 1988-07-13 1990-01-18 Wacker Chemitronic Verfahren zur konservierung der oberflaeche von siliciumscheiben
US4885056A (en) * 1988-09-02 1989-12-05 Motorola Inc. Method of reducing defects on semiconductor wafers
US5288333A (en) * 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
JP2839615B2 (ja) * 1990-01-24 1998-12-16 株式会社東芝 半導体基板の洗浄液及び半導体装置の製造方法
DE4002327A1 (de) * 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung
JPH03228328A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体基板の水洗方法
JPH04113620A (ja) * 1990-09-03 1992-04-15 Seiko Epson Corp 半導体基板の洗浄方法
JP2984348B2 (ja) * 1990-10-05 1999-11-29 株式会社東芝 半導体ウェーハの処理方法
DE69231971T2 (de) * 1991-01-24 2002-04-04 Wako Pure Chem Ind Ltd Lösungen zur Oberflächenbehandlung von Halbleitern
US5275667A (en) * 1992-05-04 1994-01-04 Motorola, Inc. Method of characterizing the level of cleanliness of an inorganic surface
US5308400A (en) * 1992-09-02 1994-05-03 United Microelectronics Corporation Room temperature wafer cleaning process
US5516730A (en) * 1994-08-26 1996-05-14 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process of wafers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
US5219613A (en) * 1990-06-13 1993-06-15 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for producing storage-stable surfaces of polished silicon wafers

Also Published As

Publication number Publication date
KR960009042A (ko) 1996-03-22
EP0701275A2 (en) 1996-03-13
EP0701275B1 (en) 2003-11-05
US5516730A (en) 1996-05-14
CN1127805A (zh) 1996-07-31
DE69532060D1 (de) 2003-12-11
US5712198A (en) 1998-01-27
JPH0878377A (ja) 1996-03-22
DE69532060T2 (de) 2004-04-15
KR100208868B1 (ko) 1999-07-15
EP0701275A3 (en) 1997-05-21

Similar Documents

Publication Publication Date Title
CN1057351C (zh) 硅片热处理的方法
US5932022A (en) SC-2 based pre-thermal treatment wafer cleaning process
TW301762B (en) Pre-thermal treatment cleaning process
EP1737026B1 (en) Method of surface treating III-V semiconductor compound based substrates and method of manufacturing III-V compound semiconductors
TWI393168B (zh) 降低矽晶圓中金屬污染之方法
EP0718873A2 (en) Cleaning process for hydrophobic silicon wafers
US6348157B1 (en) Cleaning method
US5626681A (en) Method of cleaning semiconductor wafers
US20080156349A1 (en) Method for cleaning silicon wafer
KR100832944B1 (ko) 어닐 웨이퍼의 제조방법 및 어닐 웨이퍼
EP0782177A2 (en) Improvements in or relating to semiconductors
US6319331B1 (en) Method for processing semiconductor substrate
US6022813A (en) Method and apparatus for manufacturing semiconductor devices
US20030104680A1 (en) Process for the removal of copper from polished boron-doped silicon wafers
US7238291B2 (en) Method for removing oxides from a Ge semiconductor substrate surface
JP5330598B2 (ja) 基板から汚染物質を除去するための方法および装置
JPS60247928A (ja) 半導体基板の洗浄方法
JP3036366B2 (ja) 半導体シリコンウェハの処理方法
JP3320190B2 (ja) 半導体装置の製造方法
CN114242567A (zh) 一种降低高氧硅衬底bmd的工艺
JP4305800B2 (ja) シリコンウエハ表面の窒化物評価方法
JP2001213696A (ja) エピタキシャルウェーハの製造方法およびこれに用いる半導体製造装置
MORITA et al. PASSSIVATION OF Cu PARTICLES ON Si SUBSTRATE BY FOM (HF+ 0,-UPW) SOLUTION HIROSHI MORITA*, JAE-DONG JOO**, ROCHDI MESSOUSSI***, KAZUHIKO KAWADA, JONG-SOO KIM and TADAHIRO OHMI
JP2004140126A (ja) 洗浄後の半導体基板の乾燥方法
Reinhardt et al. An Effective In-Situ O2 High Density Plasma Clean

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee