CN105609602B - Visible light communication upside-down mounting RCLED and preparation method thereof - Google Patents
Visible light communication upside-down mounting RCLED and preparation method thereof Download PDFInfo
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- CN105609602B CN105609602B CN201511005814.5A CN201511005814A CN105609602B CN 105609602 B CN105609602 B CN 105609602B CN 201511005814 A CN201511005814 A CN 201511005814A CN 105609602 B CN105609602 B CN 105609602B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
Upside-down mounting RCLED, the upside-down mounting RCLED is used to include LED chip and flip-chip substrate the invention discloses a kind of visible light communication, LED chip includes：Chip substrate, cushion, the nitride DBR layer and oxide DBR layer, n-type semiconductor layer, active area, p-type semiconductor layer, transparency conducting layer and p, n-electrode for constituting resonator；The flip-chip substrate includes P, the N electrode pad of support substrate, insulating barrier and mutual insulating isolation successively from the bottom to top；The LED chip is electrically connected by P, the N electrode pad of metal soldered ball or eutectic weldering respectively with the flip-chip substrate.The present invention is conducive to obtaining the long upside-down mounting RCLED of short cavity of high-quality-factor, so as to cooperate with the frequency response for improving LED and quantum efficiency, meets optic communication specular removal, the light source requirements of high bandwidth.
Description
Technical field
The invention belongs to lighting source field, and in particular to a kind of upside-down mounting RCLED and preparation method thereof, more particularly to a kind of
Visible light communication upside-down mounting RCLED and preparation method thereof of specular removal, high bandwidth.
Background technology
White light LED energy-saving environmental protection, life-span are reliable, and the high speed modulated signal that can not be sensed by loading human eye transmits data,
The function of visible light wireless communication can be realized while illumination is taken into account.But, also directly determine can for LED frequency response
See the modulation bandwidth and transmission speed of optical communication system.
RCLED (Resonant Cavity Light-Emitting Diode, resonant cavity light emitting diodes) is active area
Light emitting diode in resonator, changes the mode configuration in vacuum electric magnetic field by microcavity effect, can make the light of resonant wavelength
Pattern density increases, so as to increase the spontaneous emission rate of active area, reduces the recombination lifetime of carrier, improves modulation bandwidth.
Meanwhile, change the power distribution of the angle of emergence using F-P cavity interference effect, the wide part of outgoing can be made to concentrate in extraction angle, from
And increase light outgoing, improve external quantum efficiency.RCLED spectral purities are higher, better heat stability, are that collaboration improves LED frequencies
The light source solution of great potential in terms of response and quantum efficiency.
But, still there is many difficult points in the GaN base RCLED researchs towards optic communication.For traditional formal dress RCLED, with
When oxide DBR makees upper and lower speculum, its limitation is that substrate can not thoroughly be thinned, and chamber length is difficult to shorten to a few wavelengths amount
Level, therefore, microcavity effect is relatively weak.Current solution mainly has two：One is laser lift-off sapphire, then in stripping
From GaN faces deposit high anti-oxide DBR or metallic mirror again with other substrate thermocompression bondings or plating；Another is LED
Directly the high anti-rate nitride DBR by representative of AlN/GaN systems is introduced in epitaxial structure in sapphire side.The former is due to introducing
The technique such as laser lift-off and thermocompression bonding, plating, will certainly increase device cost, and the latter because AlN/GaN lattice mismatch and
High-quality AlN/GaN system DBR difficulty of the reflectivity more than 90% is prepared in thermal expansion coefficient difference, real process larger, needed
Introduce superlattices insert layer and require the fine control of Material growth process.
Upside-down mounting RCLED can avoid formal dress RCLED deficiency to a certain extent.Due to using substrate light extraction, inverted structure
The nitride DBR that less logarithm can be grown in substrate side makees speculum, and the Material growth that can effectively reduce nitride DBR is difficult
Degree., can be significantly close to active area in addition, upside-down mounting RCLED nitride DBR is close to n-type semiconductor layer, but Conventional flip structure
Typically with the lower speculum of P electrode work containing silver metal, reliability is low caused by being faced with after annealing easily generation silver layer reunion
With reflectivity it is not high the problem of.
The present invention is replaced under P electrode metal work with preparing easy, with low cost, technical maturity high antiferromagnetic oxide DBR layer
Speculum, and realize current expansion by transparency conducting layer, has both taken into account traditional formal dress RCLED big portion's maturation process, also after
Upside-down mounting RCLED technical advantage has been held, has been conducive to obtaining the long upside-down mounting RCLED of short cavity of high-quality-factor, so as to meet optic communication
With specular removal, the light source requirements of high bandwidth.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention provides a kind of visible light communication upside-down mounting RCLED and preparation method thereof,
To reach the purpose for the long upside-down mounting RCLED of short cavity for obtaining high-quality-factor.
According to an aspect of the invention, it is proposed that a kind of visible light communication upside-down mounting RCLED, the visible light communication upside-down mounting
RCLED includes LED chip and flip-chip substrate, wherein：
The LED chip includes：Chip substrate, cushion, the nitride DBR layer of composition resonator and oxide DBR layer,
N-type semiconductor layer, active area, p-type semiconductor layer, transparency conducting layer and p, n-electrode；
The nitride DBR layer and oxide DBR layer are upper and lower with upside-down mounting RCLED respectively as the visible light communication
Speculum, lower speculum is produced on the transparency conducting layer and its reflectivity is higher than upper reflector；
The p-electrode is completely covered the oxide DBR layer and interconnected with the transparency conducting layer, and the n-electrode makes
In the n-type semiconductor layer；
The flip-chip substrate includes support substrate, the P of insulating barrier and mutual insulating isolation, N electrode successively from the bottom to top
Pad；
The LED chip is electrically connected by P, the N electrode pad of metal soldered ball or eutectic weldering respectively with the flip-chip substrate.
Alternatively, the chip substrate is sapphire or carborundum；The support substrate is silicon, ceramics, wiring board or gold
Belong to plate, the insulating barrier is silica, silicon nitride or aluminum oxide.
Alternatively, the side of the n-type semiconductor layer is towards being formed with table top on the direction of chip substrate, the table top
Depth is less than the thickness of the n-type semiconductor layer.
Alternatively, the active area is blue and green light or deep ultraviolet band multi-quantum pit structure；The transparency conducting layer is
ITO, graphene or ZnO film.
Alternatively, the material for preparing of the oxide DBR layer is multicycle oxide DBR material group, and in active area ripple
Nearby reflectivity is not less than 90% to section；The material for preparing of the nitride DBR layer is multicycle nitride DBR material group, and
Reflectivity near active area wave band is less than oxide DBR layer.
Alternatively, the Resonant Intake System between the upper and lower speculum is the integral multiple of the effective half-wavelength of device inside.
According to another aspect of the present invention, a kind of visible light communication upside-down mounting RCLED preparation method, the side are also provided
Method comprises the following steps：
Step 1：Grown buffer layer, nitride DBR layer, n-type semiconductor layer, active area and p-type successively on a chip substrate
Semiconductor layer；
Step 2：Transparency conducting layer is deposited in the p-type semiconductor layer, photoetching corrosion produces table top figure；
Step 3：Etch unglazed photoresist protection zone downwards by ICP and form table top, etching depth reaches the n-type and partly led
Body layer；
Step 4：Deposition oxide DBR layer is as lower speculum on the part surface of the transparency conducting layer, and passes through
Litho pattern reserves metal interconnection region, is leaned on while the DBR layer is also formed in active area, p-type semiconductor layer and transparency conducting layer
On the side wall in close-table face and the part surface of table top；
Step 5：P-electrode is deposited in the residual surface of the surface of the oxide DBR layer and the transparency conducting layer,
N-electrode is deposited in the residual surface of the table top, p, n-electrode are interconnected with transparency conducting layer and table top respectively, complete LED chip
Preparation；
Step 6：Depositing insulating layer on the support substrate；
Step 7：P, N electrode pad are made on the insulating barrier, flip-chip substrate is formed；
Step 8：The LED chip is welded by flip chip bonding, eutectic or the method for bonding is inverted on the flip-chip substrate,
P, P, the N electrode pad of n-electrode respectively with the flip-chip substrate of the LED chip are connected.
Alternatively, the chip substrate is sapphire or carborundum；The support substrate is silicon, ceramics, wiring board or gold
Belong to plate, the insulating barrier is silica, silicon nitride or aluminum oxide.
Alternatively, the material for preparing of the oxide DBR layer is multicycle oxide DBR material group, and in active area ripple
Nearby reflectivity is not less than 90% to section；The material for preparing of the nitride DBR layer is multicycle nitride DBR material group, and
Reflectivity near active area wave band is less than oxide DBR layer.
Alternatively, the active area is blue and green light or deep ultraviolet band multi-quantum pit structure；The transparency conducting layer is
ITO, graphene or ZnO film.
Present invention, avoiding reliability caused by reuniting after the annealing of traditional argentiferous P electrode because of silver layer is not low high with reflectivity
The problem of, while making upper reflector with the nitride DBR close to n-type semiconductor layer, significantly it can be dropped close to active area and effectively
Low extension high reflectance nitride DBR difficulty, is conducive to obtaining the long upside-down mounting RCLED of short cavity of high-quality-factor, so as to cooperate with
Improve LED frequency response and quantum efficiency, meet optic communication specular removal, the light source requirements of high bandwidth.
Brief description of the drawings
Fig. 1 is the vertical section structure schematic diagram of the visible light communication upside-down mounting RCLED according to one embodiment of the invention；
Fig. 2 is the preparation method flow chart of the visible light communication upside-down mounting RCLED according to one embodiment of the invention.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
Fig. 1 is the vertical section structure schematic diagram of the visible light communication upside-down mounting RCLED according to one embodiment of the invention, is such as schemed
Shown in 1, the visible light communication upside-down mounting RCLED includes：
Chip substrate 10；
Wherein, the chip substrate 10 is sapphire or carborundum.
The low-temperature gan layer 11 and u-GaN layers 12 formed successively in the chip substrate 10, is used as cushion；
Nitride DBR layer 13, is formed on the u-GaN layers 12, is used as upper reflector；
N-type semiconductor layer 14, is formed on the nitride DBR layer 13, the side of the n-type semiconductor layer 14, direction
Table top 141 is formed with the direction of chip substrate 10, its depth is less than the thickness of the n-type semiconductor layer 14, mesa shape is
Rectangle, sector or interdigitated；
Active area 15, is formed at the n-type semiconductor layer 14 on the surface in addition to the table top 141；
Wherein, the active area 15 is the multi-quantum pit structure of blue light, greening or deep ultraviolet band, and representative value is 3 to 5
SQW.
P-type semiconductor layer 16, is formed on the active area 15；
Wherein, n-type semiconductor layer 14, active area 15 and p-type semiconductor layer 16 are referred to as gallium nitride based LED layer.
Wherein, the material of the u-GaN layers 12, n-type semiconductor layer 14, active area 15 and p-type semiconductor layer 16 is
GaN systems.
Transparency conducting layer 17, is formed at and is such as deposited in the p-type semiconductor layer 16；
Wherein, the transparency conducting layer 17 is ITO, graphene or ZnO film.
Oxide DBR layer 18, is formed at, as described in being deposited on the part surface of transparency conducting layer 17, is used as lower reflection
Mirror, its reflectivity is higher than upper reflector, while the oxide DBR layer 18 is also formed in active area 15, p-type semiconductor layer 16 and saturating
Bright conductive layer 17 is on the side wall of table top 141 and the part surface of table top 141, to device passivation in order to avoid leaking electricity；
Wherein, the oxide DBR layer 18 is selected from including TiO2/SiO2、Ti3O5/SiO2、Ta2O5/SiO2、Ti3O5/
Al2O3、ZrO2/SiO2Or TiO2/Al2O3Deng one group of multicycle material in oxide DBR materials group, and in active area wave band
Neighbouring reflectivity is not less than 90%.
The nitride DBR layer 13 is selected from including AlN/GaN, AlGaN/GaN, InAlGaN/GaN, AlInN/GaN
Or one group of multicycle material in the nitride DBR materials group such as AlGaN/AlN, the reflectivity near active area wave band is less than
Oxide DBR layer, such as be 50%~80%.
P-electrode 19, is formed at the surface of the oxide DBR layer 18 and the residual surface of the transparency conducting layer 17
On, n-electrode 20, on the part surface for being formed at the table top 141, p, n-electrode by reserve accordingly contact area respectively with
Transparency conducting layer 17 and table top 141 are interconnected, and form LED chip 100；
Wherein, the p-electrode 19 surrounds the oxide DBR layer 18 entirely, to maximize the resonance effect of device.
Support substrate 21 and the insulating barrier 22 being formed in the support substrate 21；
Wherein, the support substrate 21 is silicon, ceramics, wiring board or metallic plate；The insulating barrier 22 is silica, nitrogen
SiClx or aluminum oxide etc., thickness are 200~500nm, and the insulating barrier 22 can be prevented effectively between P pads 23 and N pads 24
Occurs the situation of short circuit；
P electrode pad 23 and N electrode pad 24, are respectively formed on the part surface of the insulating barrier 22 and mutual insulating
Isolation, forms flip-chip substrate 200；
The P of the LED chip 100, N electrode 19,20 by metal soldered ball 25 or eutectic weldering respectively with flip-chip substrate 200
P pads 23 and N pads 24 are connected, and obtain upside-down mounting RCLED.
It is worth noting that, the chamber length between upper and lower DBR speculums should be controlled strictly, a length of device inside of chamber need to be met
The condition of the integral multiple of effective half-wavelength, representative value is a small number of wavelength.
Referring to Fig. 2, and with reference to shown in Fig. 1, the present invention a kind of optic communication upside-down mounting RCLED preparation method is also provided,
This method comprises the following steps：
Step 1：MOCVD techniques are such as used in chip substrate 10, and grown buffer layer is low-temperature gan layer 11 and u- successively
GaN layer 12, nitride DBR layer 13, n-type semiconductor layer 14, active area 15 and p-type semiconductor layer 16；
Wherein, the chip substrate 10 is sapphire or carborundum.
Wherein, the active area 15 is the multi-quantum pit structure of blue and green light or deep ultraviolet band, and representative value is 3 to 5
Cycle MQW.
Wherein, the material of the u-GaN layers 12, n-type semiconductor layer 14, active area 15 and p-type semiconductor layer 16 is
GaN systems.
Step 2：Transparency conducting layer 17 is deposited in the p-type semiconductor layer 16, is then made and put into effect by photoetching corrosion
The figure of face 141, wherein, the table top 141 be shaped as rectangle, fan-shaped or interdigitated；
Step 3：Etch unglazed photoresist protection zone downwards by ICP and form table top 141, etching depth reaches the n-type
Semiconductor layer 14；
Step 4：Speculum under deposition oxide DBR layer 18 is used as on the part surface of the transparency conducting layer 17, its
Middle oxide DBR layer 18 simultaneously should with reserving metal interconnection region by litho pattern on the contact position of transparency conducting layer 17
DBR layer is also formed in the side wall and table top 141 of active area 15, p-type semiconductor layer 16 and transparency conducting layer 17 close to table top 141
On part surface, to device passivation in order to avoid leaking electricity；
Wherein, the oxide DBR layer 18 is selected from including TiO2/SiO2、Ti3O5/SiO2、Ta2O5/SiO2、Ti3O5/
Al2O3、ZrO2/SiO2Or TiO2/Al2O3Deng one group of multicycle material in oxide DBR materials group, and in active area wave band
Neighbouring reflectivity is not less than 90%.
The nitride DBR layer 13 is selected from including AlN/GaN, AlGaN/GaN, InAlGaN/GaN, AlInN/GaN
Or one group of multicycle material in the nitride DBR materials group such as AlGaN/AlN, the reflectivity near active area wave band is less than
Oxide DBR layer, such as be 50%~80%.
Step 5：P is deposited in the residual surface of the surface of the oxide DBR layer 18 and the transparency conducting layer 17
Electrode 19, deposits n-electrode 20, and distinguish p, n-electrode by reserved contact area in the residual surface of the table top 141
Interconnected with transparency conducting layer 17 and table top 141, complete LED chip 100 and prepare, wherein the p-electrode 19 surrounds the oxidation entirely
Thing DBR layer 18, to maximize the resonance effect of device；
Step 6：A layer insulating 22 is deposited in support substrate 21；
Wherein, the insulating barrier 22 is silica, silicon nitride or aluminum oxide etc., and thickness is 200~500nm；
Step 7：P electrode pad 23 and N electrode pad 24 are made on the insulating barrier 22, flip-chip substrate 200 is formed；
Step 8：LED chip 100 is welded by metal soldered ball 25, eutectic or the method for bonding is inverted in flip-chip substrate 200
On, the P electrode pad 23 and N electrode pad of its p, n-electrode 19,20 by flip chip bonding or eutectic weldering respectively with flip-chip substrate 200
24 connections, complete to prepare, obtain upside-down mounting RCLED.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (10)
1. a kind of visible light communication upside-down mounting RCLED, it is characterised in that the visible light communication includes LED core with upside-down mounting RCLED
Piece and flip-chip substrate, wherein：
The LED chip includes：Chip substrate, cushion, the nitride DBR layer and oxide DBR layer, n-type for constituting resonator
Semiconductor layer, active area, p-type semiconductor layer, transparency conducting layer and p, n-electrode；
The nitride DBR layer and oxide DBR layer are respectively as upper and lower reflection of the visible light communication with upside-down mounting RCLED
Mirror, lower speculum is produced on the transparency conducting layer and its reflectivity is higher than the reflectivity of upper reflector；
The p-electrode is completely covered the oxide DBR layer and interconnected with the transparency conducting layer, and the n-electrode is produced on institute
State in n-type semiconductor layer；
The flip-chip substrate includes P, the N electrode pad of support substrate, insulating barrier and mutual insulating isolation successively from the bottom to top；
The LED chip is electrically connected by P, the N electrode pad of metal soldered ball or eutectic weldering respectively with the flip-chip substrate.
2. visible light communication according to claim 1 upside-down mounting RCLED, it is characterised in that the chip substrate is blue precious
Stone or carborundum；The support substrate be silicon, ceramics, wiring board or metallic plate, the insulating barrier be silica, silicon nitride or
Aluminum oxide.
3. visible light communication according to claim 1 upside-down mounting RCLED, it is characterised in that the one of the n-type semiconductor layer
Side is less than the thickness of the n-type semiconductor layer towards table top, the depth of the table top is formed with the direction of chip substrate.
4. visible light communication according to claim 1 upside-down mounting RCLED, it is characterised in that the active area is blue light, green
Light or deep ultraviolet band multi-quantum pit structure；The transparency conducting layer is ITO, graphene or ZnO film.
5. visible light communication according to claim 1 upside-down mounting RCLED, it is characterised in that the system of the oxide DBR layer
Standby material is multicycle oxide DBR material group, and reflectivity is not less than 90% near active area wave band；The nitride
The material for preparing of DBR layer is multicycle nitride DBR material group, and the reflectivity near active area wave band is less than oxide
The reflectivity of DBR layer.
6. visible light communication according to claim 1 upside-down mounting RCLED, it is characterised in that between the upper and lower speculum
Resonant Intake System be the effective half-wavelength of device inside integral multiple.
7. a kind of visible light communication upside-down mounting RCLED preparation method, it is characterised in that methods described comprises the following steps：
Step 1：Grown buffer layer, nitride DBR layer, n-type semiconductor layer, active area and p-type are partly led successively on a chip substrate
Body layer；
Step 2：Transparency conducting layer is deposited in the p-type semiconductor layer, photoetching corrosion produces table top figure；
Step 3：Etch unglazed photoresist protection zone downwards by ICP and form table top, etching depth reaches the n-type semiconductor
Layer；
Step 4：Deposition oxide DBR layer is as lower speculum on the part surface of the transparency conducting layer, and passes through photoetching
Figure reserves metal interconnection area, while the DBR layer is also formed in active area, p-type semiconductor layer and transparency conducting layer close to platform
On the side wall in face and the part surface of table top；
Step 5：P-electrode is deposited in the residual surface of the surface of the oxide DBR layer and the transparency conducting layer, in institute
State and n-electrode is deposited in the residual surface of table top, p, n-electrode are interconnected with transparency conducting layer and table top respectively, complete the system of LED chip
It is standby；
Step 6：Depositing insulating layer on the support substrate；
Step 7：P, N electrode pad are made on the insulating barrier, flip-chip substrate is formed；
Step 8：The LED chip is welded by flip chip bonding, eutectic or the method for bonding is inverted on the flip-chip substrate, it is described
P, P, the N electrode pad of n-electrode respectively with the flip-chip substrate of LED chip are connected.
8. method according to claim 7, it is characterised in that the chip substrate is sapphire or carborundum；The branch
Support substrate is silicon, ceramics, wiring board or metallic plate, and the insulating barrier is silica, silicon nitride or aluminum oxide.
9. method according to claim 7, it is characterised in that the material for preparing of the oxide DBR layer is multicycle oxygen
Compound DBR material groups, and reflectivity is not less than 90% near active area wave band；The material for preparing of the nitride DBR layer is
Multicycle nitride DBR material group, and reflectivity of the reflectivity less than oxide DBR layer near active area wave band.
10. method according to claim 7, it is characterised in that the active area is that blue and green light or deep ultraviolet band are more
SQW；The transparency conducting layer is ITO, graphene or ZnO film.
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| CN108133992B (en) * | 2017-12-22 | 2019-11-29 | 中国科学院半导体研究所 | Optical pumping resonance enhances upside-down mounting red-light LED device and preparation method thereof |
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| CN114069387B (en) * | 2020-08-07 | 2024-03-26 | 中国科学院宁波材料技术与工程研究所 | Novel nitride vertical structure laser and preparation method thereof |
| CN112331753B (en) * | 2020-11-06 | 2022-11-11 | 业成科技（成都）有限公司 | Light emitting diode structure |
| CN116584011A (en) * | 2020-11-27 | 2023-08-11 | 苏州晶湛半导体有限公司 | Semiconductor light emitting device and method for manufacturing the same |
| CN113270438B (en) * | 2021-04-30 | 2024-02-20 | 广东德力光电有限公司 | Manufacturing process of flip micro LED lattice |
| CN113284988B (en) * | 2021-05-12 | 2022-02-01 | 深圳市平深光电子科技有限公司 | RCLED lamp bead packaging process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1267109A (en) * | 1999-02-05 | 2000-09-20 | 惠普公司 | Chip bonded Al-Ca-In-N structure |
| US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
| CN1461062A (en) * | 2002-04-17 | 2003-12-10 | 夏普公司 | Luminous element for semiconductor |
| CN2662496Y (en) * | 2003-09-25 | 2004-12-08 | 洪瑞华 | Vertical resonant cavity surface-emission type radium emanation diode |
| CN1624502A (en) * | 2003-12-01 | 2005-06-08 | 中国科学院半导体研究所 | Silicon base high quantum effect resonance chamber intensified detector and its manufacturing method |
| CN103325894A (en) * | 2013-07-04 | 2013-09-25 | 厦门大学 | Manufacturing method of electrically injected GaN-based resonant cavity |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014086533A (en) * | 2012-10-23 | 2014-05-12 | Showa Denko Kk | Light-emitting diode and process of manufacturing the same |
-
2015
- 2015-12-29 CN CN201511005814.5A patent/CN105609602B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1267109A (en) * | 1999-02-05 | 2000-09-20 | 惠普公司 | Chip bonded Al-Ca-In-N structure |
| US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
| CN1461062A (en) * | 2002-04-17 | 2003-12-10 | 夏普公司 | Luminous element for semiconductor |
| CN2662496Y (en) * | 2003-09-25 | 2004-12-08 | 洪瑞华 | Vertical resonant cavity surface-emission type radium emanation diode |
| CN1624502A (en) * | 2003-12-01 | 2005-06-08 | 中国科学院半导体研究所 | Silicon base high quantum effect resonance chamber intensified detector and its manufacturing method |
| CN103325894A (en) * | 2013-07-04 | 2013-09-25 | 厦门大学 | Manufacturing method of electrically injected GaN-based resonant cavity |
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