CN105609602A - Inverted RCLED (resonant cavity light-emitting diode) for visible light communication and preparation method therefor - Google Patents
Inverted RCLED (resonant cavity light-emitting diode) for visible light communication and preparation method therefor Download PDFInfo
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- CN105609602A CN105609602A CN201511005814.5A CN201511005814A CN105609602A CN 105609602 A CN105609602 A CN 105609602A CN 201511005814 A CN201511005814 A CN 201511005814A CN 105609602 A CN105609602 A CN 105609602A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The invention discloses an inverted RCLED (resonant cavity light-emitting diode) for visible light communication. The inverted RCLED comprises an LED chip and an inverted substrate, wherein the LED chip comprises a chip substrate, a buffer layer, a nitride DBR layer and an oxide DBR layer for forming a resonant cavity, an n type semiconductor layer, an active layer, a p type semiconductor layer, a transparent conductive layer and p, n electrodes, wherein the inverted substrate comprises a supporting substrate, an insulating layer, and P and N electrode bonding pads from the bottom up in sequence, wherein the P and N electrode bonding pads are insulated and isolated from each other; and the LED chip is electrically connected with the P and N electrode bonding pads of the inverted substrate through metal solder balls or eutectic soldering separately. According to the inverted RCLED, the high-quality-factor and short-cavity-length inverted RCLED can be obtained, so that the frequency response and quantum efficiency of the LED can be improved cooperatively so as to satisfy the light source requirements of high lighting effect and high bandwidth for optical communication.
Description
Technical field
The invention belongs to lighting source field, be specifically related to a kind of upside-down mounting RCLED and preparation method thereof,Be particularly related to visible light communication upside-down mounting RCLED of a kind of high light efficiency, high bandwidth and preparation method thereof.
Background technology
White light LED energy-saving environmental protection, life-span are reliable, by loading the High Speed Modulation that human eye cannot sensingSignal conveys data can realize the function of visible ray radio communication in taking into account illumination. But,The frequency response of LED has also directly determined modulation bandwidth and the transmission speed of visible light communication system.
RCLED (ResonantCavityLight-EmittingDiode, resonant cavity light emitting diodes)Be the light emitting diode of active area in resonator, change the pattern in vacuum electric magnetic field by microcavity effectStructure, can make the optical mode density of resonant wavelength increase, thereby increases the spontaneous emission rate of active area,Reduce the recombination lifetime of carrier, improve modulation bandwidth. Meanwhile, utilize F-P chamber interference effect to changeThe power that becomes the angle of emergence distributes, and can make the wide part of outgoing concentrate on and extract in angle, goes out thereby increase lightPenetrate, improve external quantum efficiency. RCLED spectral purity is higher, better heat stability, is collaborative changingKind LED frequency response and quantum efficiency aspect have the light source solution of potentiality.
But, still there is many difficult points towards the GaN base RCLED research of optic communication. For biographySystem formal dress RCLED, while making upper and lower speculum with oxide DBR, its limitation is that substrate can notThoroughly attenuate, chamber length is difficult to shorten to a few wavelengths magnitude, therefore, microcavity effect relatively a little less than. OrderFront solution mainly contains two: the one, laser lift-off sapphire is then heavy at peeling GaN faceLong-pending high anti-oxide DBR or metallic mirror again with other substrate thermocompression bonding or plating; AnotherIn the individual LED of being epitaxial structure, directly introducing with AlN/GaN in sapphire side is the anti-rate of height of representativeNitride DBR. The former, will certainly owing to having introduced the technique such as laser lift-off and thermocompression bonding, platingIncrease device cost, and the latter is because of lattice mismatch and the thermal expansion coefficient difference of AlN/GaN, realityIn process, preparing the high-quality AlN/GaN of reflectivity more than 90% is that DBR difficulty is larger, needsIntroduce superlattices insert layer and require the fine control of Material growth process.
Upside-down mounting RCLED can avoid the deficiency of formal dress RCLED to a certain extent. Owing to adopting liningEnd bright dipping, inverted structure can be made speculum at the nitride DBR of the long less logarithm of substrate one adnation,Can effectively reduce the Material growth difficulty of nitride DBR. In addition the nitride of upside-down mounting RCLED,DBR next-door neighbour N-shaped semiconductor layer, significantly close active area, but traditional inverted structure is generally to containHave the P electrode of silver metal to make lower speculum, be faced with easily occur after annealing silver layer reunite and cause canBy the low and not high problem of reflectivity of property.
The present invention is easy to prepare, with low cost, the high antiferromagnetic oxide DBR layer of technical maturity replaces PElectrode metal is made lower speculum, and realizes current expansion by transparency conducting layer, is just both taking into account traditionFill the large portion maturation process of RCLED, also inherited the technical advantage of upside-down mounting RCLED, be conducive toObtain the long upside-down mounting RCLED of short cavity of high-quality-factor, thereby meet high light efficiency, high-band for optic communicationWide light source requirements.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of visible light communication upside-down mounting RCLEDAnd preparation method thereof, to reach the object of the long upside-down mounting RCLED of short cavity that obtains high-quality-factor.
According to an aspect of the present invention, a kind of visible light communication upside-down mounting RCLED is proposed, described canSee that optic communication upside-down mounting RCLED comprises LED chip and flip-chip substrate, wherein:
Described LED chip comprises: the nitride DBR of chip substrate, cushion, formation resonatorLayer and oxide DBR layer, N-shaped semiconductor layer, active area, p-type semiconductor layer, transparency conducting layerWith p, n electrode;
Described nitride DBR layer and oxide DBR layer are respectively as described visible light communication upside-down mountingThe upper and lower speculum of RCLED, lower speculum is produced on described transparency conducting layer and its reflectivityHigher than upper reflector;
Described p electrode covers described oxide DBR layer interconnected with described transparency conducting layer completely,Described n electrode fabrication is on described N-shaped semiconductor layer;
Described flip-chip substrate comprises support substrates, insulating barrier and mutual insulating isolation from the bottom to top successivelyP, N electrode pad;
Described LED chip by the weldering of metal soldered ball or eutectic respectively with P, the N electricity of described flip-chip substrateThe electrical connection of utmost point pad.
Alternatively, described chip substrate is sapphire or carborundum; Described support substrates be silicon, pottery,Wiring board or metallic plate, described insulating barrier is silica, silicon nitride or aluminium oxide.
Alternatively, a side of described N-shaped semiconductor layer is formed with table top in the direction of chip substrate,The degree of depth of described table top is less than the thickness of described N-shaped semiconductor layer.
Alternatively, described active area is blue light, green glow or deep ultraviolet wave band multi-quantum pit structure; DescribedTransparency conducting layer is ITO, Graphene or ZnO film.
Alternatively, the material of preparing of described oxide DBR layer is multicycle oxide DBR material group,And reflectivity is not less than 90% near active area wave band; Described nitride DBR layer prepare materialFor multicycle nitride DBR material group, and near reflectivity active area wave band is lower than oxideDBR layer.
Alternatively, the length of the resonator between described upper and lower speculum is the effective half-wavelength of device insideIntegral multiple.
The system of a kind of visible light communication upside-down mounting RCLED is also provided according to a further aspect in the invention,Preparation Method, described method comprises the steps:
Step 1: grown buffer layer, nitride DBR layer, N-shaped semiconductor successively in chip substrateLayer, active area and p-type semiconductor layer;
Step 2: deposit transparent conductive layer on described p-type semiconductor layer, photoetching corrosion is made and put into effectFace figure;
Step 3: form table top by the downward etching of ICP without photoresist protection zone, etching depth arrivesReach described N-shaped semiconductor layer;
Step 4: on the part surface of described transparency conducting layer deposition oxide DBR layer as under anti-Penetrate mirror, and reserve metal interconnection region by litho pattern, this DBR layer is also formed at active simultaneouslyDistrict, p-type semiconductor layer and transparency conducting layer are near on the sidewall of table top and the part surface of table top;
Step 5: in the surface of described oxide DBR layer and the residual surface of described transparency conducting layerUpper deposition p electrode deposits n electrode in the residual surface of described table top, p, n electrode respectively with thoroughlyBright conductive layer and table top are interconnected, complete the preparation of LED chip;
Step 6: depositing insulating layer in support substrates;
Step 7: make P, N electrode pad on described insulating barrier, form flip-chip substrate;
Step 8: the method upside-down mounting that described LED chip is passed through to flip chip bonding, eutectic weldering or bonding is in instituteState on flip-chip substrate, the p of described LED chip, n electrode respectively with P, the N of described flip-chip substrateElectrode pad connects.
Alternatively, described chip substrate is sapphire or carborundum; Described support substrates be silicon, pottery,Wiring board or metallic plate, described insulating barrier is silica, silicon nitride or aluminium oxide.
Alternatively, the material of preparing of described oxide DBR layer is multicycle oxide DBR material group,And reflectivity is not less than 90% near active area wave band; Described nitride DBR layer prepare materialFor multicycle nitride DBR material group, and near reflectivity active area wave band is lower than oxideDBR layer.
Alternatively, described active area is blue light, green glow or deep ultraviolet wave band multi-quantum pit structure; DescribedTransparency conducting layer is ITO, Graphene or ZnO film.
The present invention avoided after the annealing of traditional argentiferous P electrode because of silver layer reunites the reliability that causes low withThe problem that reflectivity is not high is made upper reflector with the nitride DBR of next-door neighbour's N-shaped semiconductor layer simultaneously,The difficulty that can significantly also effectively reduce extension high reflectance nitride DBR near active area is favourableIn the long upside-down mounting RCLED of the short cavity that obtains high-quality-factor, thus the collaborative frequency response that improves LEDAnd quantum efficiency, meet the light source requirements of high light efficiency, high bandwidth for optic communication.
Brief description of the drawings
Fig. 1 is the vertical section knot of visible light communication upside-down mounting RCLED according to an embodiment of the inventionStructure schematic diagram;
Fig. 2 is the preparation method of visible light communication upside-down mounting RCLED according to an embodiment of the inventionFlow chart.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with concrete realityExecute example, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the vertical section knot of visible light communication upside-down mounting RCLED according to an embodiment of the inventionStructure schematic diagram, as shown in Figure 1, described visible light communication comprises with upside-down mounting RCLED:
Chip substrate 10;
Wherein, described chip substrate 10 is sapphire or carborundum.
The low temperature GaN layer 11 and the u-GaN layer 12 that in described chip substrate 10, form successively, doFor cushion;
Nitride DBR layer 13, is formed on described u-GaN layer 12, as upper reflector;
N-shaped semiconductor layer 14, is formed on described nitride DBR layer 13 described N-shaped semiconductorOne side of layer 14 is formed with table top 141 in the direction of chip substrate 10, and its degree of depth is less than instituteState the thickness of N-shaped semiconductor layer 14, mesa shape is rectangle, fan-shaped or interdigitated;
Active area 15, is formed on the surface of described N-shaped semiconductor layer 14 except described table top 141;
Wherein, described active area 15 is the multi-quantum pit structure of blue light, greening or deep ultraviolet wave band,Representative value is 3 to 5 SQWs.
P-type semiconductor layer 16, is formed on described active area 15;
Wherein, N-shaped semiconductor layer 14, active area 15 and p-type semiconductor layer 16 are called gallium nitride based LEDLayer.
Wherein, described u-GaN layer 12, N-shaped semiconductor layer 14, active area 15 and p-type halfThe material of conductor layer 16 is GaN system.
Transparency conducting layer 17, is formed at such as being deposited on described p-type semiconductor layer 16;
Wherein, described transparency conducting layer 17 is ITO, Graphene or ZnO film.
Oxide DBR layer 18, is formed at, as the part surface of transparency conducting layer 17 as described in being deposited onUpper, as lower speculum, its reflectivity is higher than upper reflector, and this oxide DBR layer 18 also simultaneouslyBe formed at active area 15, p-type semiconductor layer 16 and the sidewall of transparency conducting layer 17 near table top 141On the part surface of table top 141, to device passivation in order to avoid electric leakage;
Wherein, described oxide DBR layer 18 comprises TiO for being selected from2/SiO2、Ti3O5/SiO2、Ta2O5/SiO2、Ti3O5/Al2O3、ZrO2/SiO2Or TiO2/Al2O3Deng oxide DBR material groupIn one group of multicycle material, and near reflectivity active area wave band is not less than 90%.
Described nitride DBR layer 13 for be selected from comprise AlN/GaN, AlGaN/GaN,In the nitride DBR material groups such as InAlGaN/GaN, AlInN/GaN or AlGaN/AlN oneGroup multicycle material, near reflectivity active area wave band is lower than oxide DBR layer, such as being50％～80％。
P electrode 19, be formed at described oxide DBR layer 18 surface and described transparency conducting layerIn 17 residual surface, n electrode 20, is formed on the part surface of described table top 141 p, nElectrode is interconnected with transparency conducting layer 17 and table top 141 respectively by corresponding reserved contact area, shapeBecome LED chip 100;
Wherein, described p electrode 19 is complete surrounds described oxide DBR layer 18, to maximize deviceResonance effect.
Support substrates 21 and be formed at the insulating barrier 22 in described support substrates 21;
Wherein, described support substrates 21 is silicon, pottery, wiring board or metallic plate; Described insulating barrier22 is silica, silicon nitride or aluminium oxide etc., and thickness is 200～500nm, described insulating barrier 22Can effectively prevent situation about being short-circuited between P pad 23 and N pad 24;
P electrode pad 23 and N electrode pad 24, be formed at respectively the part table of described insulating barrier 22On face, also mutual insulating isolation, forms flip-chip substrate 200;
P, the N electrode 19,20 of described LED chip 100 divide by metal soldered ball 25 or eutectic welderingBe not connected with P pad 23 and the N pad 24 of flip-chip substrate 200, obtain upside-down mounting RCLED.
It should be noted that the chamber length between upper and lower DBR speculum should strictly control, need to meetThe condition of the long integral multiple for the effective half-wavelength of device inside in chamber, representative value is a minority wavelength.
Refer to Fig. 2, and in conjunction with shown in Fig. 1, the present invention also provides a kind of optic communication upside-down mounting RCLEDPreparation method, the method comprises the steps:
Step 1: grown buffer layer is successively such as adopting MOCVD technique in chip substrate 10Low temperature GaN layer 11 and u-GaN layer 12, nitride DBR layer 13, N-shaped semiconductor layer 14, haveSource region 15 and p-type semiconductor layer 16;
Wherein, described chip substrate 10 is sapphire or carborundum.
Wherein, described active area 15 is the multi-quantum pit structure of blue light, green glow or deep ultraviolet wave band,Representative value is 3 to 5 cycle MQWs.
Wherein, described u-GaN layer 12, N-shaped semiconductor layer 14, active area 15 and p-type halfThe material of conductor layer 16 is GaN system.
Step 2: deposit transparent conductive layer 17 on described p-type semiconductor layer 16, then passes through lightCarve corrosion produce table top 141 figures, wherein, described table top 141 be shaped as rectangle, fan-shaped orPerson's interdigitated;
Step 3: form table top 141 by the downward etching of ICP without photoresist protection zone, etching is darkDegree arrives described N-shaped semiconductor layer 14;
Step 4: deposition oxide DBR layer 18 on the part surface of described transparency conducting layer 17As lower speculum, wherein logical on the contact position of oxide DBR layer 18 and transparency conducting layer 17Cross the reserved metal interconnection of litho pattern region, this DBR layer is also formed at active area 15, p-type half simultaneouslyConductor layer 16 with transparency conducting layer 17 near on the sidewall of table top 141 and the part surface of table top 141,To device passivation so as not to electric leakage;
Wherein, described oxide DBR layer 18 comprises TiO for being selected from2/SiO2、Ti3O5/SiO2、 Ta2O5/SiO2、Ti3O5/Al2O3、ZrO2/SiO2Or TiO2/Al2O3Deng oxide DBR material groupIn one group of multicycle material, and near reflectivity active area wave band is not less than 90%.
Described nitride DBR layer 13 for be selected from comprise AlN/GaN, AlGaN/GaN,In the nitride DBR material groups such as InAlGaN/GaN, AlInN/GaN or AlGaN/AlN oneGroup multicycle material, near reflectivity active area wave band is lower than oxide DBR layer, such as being50％～80％。
Step 5: on the surface of described oxide DBR layer 18 and described transparency conducting layer 17 surplusRemaining surface upper deposition p electrode 19 deposits n electrode 20 in the residual surface of described table top 141,And make p, n electrode interconnected with transparency conducting layer 17 and table top 141 respectively by reserved contact area,Complete LED chip 100 and prepare, the described oxide DBR layer of wherein said p electrode 19 full encirclement18, to maximize the resonance effect of device;
Step 6: deposit a layer insulating 22 in support substrates 21;
Wherein, described insulating barrier 22 is silica, silicon nitride or aluminium oxide etc., and thickness is200～500nm；
Step 7: make P electrode pad 23 and N electrode pad 24 on described insulating barrier 22, shapeBecome flip-chip substrate 200;
Step 8: LED chip 100 is fallen by the method for metal soldered ball 25, eutectic weldering or bondingBe contained on flip-chip substrate 200, its p, n electrode 19,20 by flip chip bonding or eutectic weldering respectively with fallThe P electrode pad 23 of dress substrate 200 is connected with N electrode pad 24, completes preparation, obtains upside-down mountingRCLED。
Above-described specific embodiment, carries out object of the present invention, technical scheme and beneficial effectFurther description, institute it should be understood that the foregoing is only specific embodiments of the invention and, be not limited to the present invention, within the spirit and principles in the present invention all, any repairing of doingProtection scope of the present invention changes, be equal to replacement, improvement etc., within all should be included in.
Claims (10)
1. a visible light communication upside-down mounting RCLED, is characterized in that, described visible light communication is usedUpside-down mounting RCLED comprises LED chip and flip-chip substrate, wherein:
Described LED chip comprises: the nitride DBR of chip substrate, cushion, formation resonatorLayer and oxide DBR layer, N-shaped semiconductor layer, active area, p-type semiconductor layer, transparency conducting layerWith p, n electrode;
Described nitride DBR layer and oxide DBR layer are respectively as described visible light communication upside-down mountingThe upper and lower speculum of RCLED, lower speculum is produced on described transparency conducting layer and its reflectivityHigher than upper reflector;
Described p electrode covers described oxide DBR layer interconnected with described transparency conducting layer completely,Described n electrode fabrication is on described N-shaped semiconductor layer;
Described flip-chip substrate comprises support substrates, insulating barrier and mutual insulating isolation from the bottom to top successivelyP, N electrode pad;
Described LED chip by the weldering of metal soldered ball or eutectic respectively with P, the N electricity of described flip-chip substrateThe electrical connection of utmost point pad.
2. visible light communication according to claim 1 upside-down mounting RCLED, is characterized in that,Described chip substrate is sapphire or carborundum; Described support substrates is silicon, pottery, wiring board or goldBelong to plate, described insulating barrier is silica, silicon nitride or aluminium oxide.
3. visible light communication according to claim 1 upside-down mounting RCLED, is characterized in that,One side of described N-shaped semiconductor layer is formed with table top in the direction of chip substrate, described table topThe degree of depth is less than the thickness of described N-shaped semiconductor layer.
4. visible light communication according to claim 1 upside-down mounting RCLED, is characterized in that,Described active area is blue light, green glow or deep ultraviolet wave band multi-quantum pit structure; Described transparency conducting layer isITO, Graphene or ZnO film.
5. visible light communication according to claim 1 upside-down mounting RCLED, is characterized in that,The material of preparing of described oxide DBR layer is multicycle oxide DBR material group, and at active areaNear wave band, reflectivity is not less than 90%; The material of preparing of described nitride DBR layer is multicycle nitrogenCompound DBR material group, and near reflectivity active area wave band is lower than oxide DBR layer.
6. visible light communication according to claim 1 upside-down mounting RCLED, is characterized in that,The long integral multiple for the effective half-wavelength of device inside of resonator between described upper and lower speculum.
7. a preparation method of upside-down mounting RCLED for visible light communication, is characterized in that described sideMethod comprises the steps:
Step 1: grown buffer layer, nitride DBR layer, N-shaped semiconductor successively in chip substrateLayer, active area and p-type semiconductor layer;
Step 2: deposit transparent conductive layer on described p-type semiconductor layer, photoetching corrosion is made and put into effectFace figure;
Step 3: form table top by the downward etching of ICP without photoresist protection zone, etching depth arrivesReach described N-shaped semiconductor layer;
Step 4: on the part surface of described transparency conducting layer deposition oxide DBR layer as under anti-Penetrate mirror, and reserve metal interconnection region by litho pattern, this DBR layer is also formed at active simultaneouslyDistrict, p-type semiconductor layer and transparency conducting layer are near on the sidewall of table top and the part surface of table top;
Step 5: in the surface of described oxide DBR layer and the residual surface of described transparency conducting layerUpper deposition p electrode deposits n electrode in the residual surface of described table top, p, n electrode respectively with thoroughlyBright conductive layer and table top are interconnected, complete the preparation of LED chip;
Step 6: depositing insulating layer in support substrates;
Step 7: make P, N electrode pad on described insulating barrier, form flip-chip substrate;
Step 8: the method upside-down mounting that described LED chip is passed through to flip chip bonding, eutectic weldering or bonding is in instituteState on flip-chip substrate, the p of described LED chip, n electrode respectively with P, the N of described flip-chip substrateElectrode pad connects.
8. method according to claim 7, is characterized in that, described chip substrate is blue preciousStone or carborundum; Described support substrates is silicon, pottery, wiring board or metallic plate, and described insulating barrier isSilica, silicon nitride or aluminium oxide.
9. method according to claim 7, is characterized in that, described oxide DBR layerPreparing material is multicycle oxide DBR material group, and reflectivity is not low near active area wave bandIn 90%; The material of preparing of described nitride DBR layer is multicycle nitride DBR material group, andNear reflectivity active area wave band is lower than oxide DBR layer.
10. method according to claim 7, is characterized in that, described active area be blue light,Green glow or deep ultraviolet wave band MQW; Described transparency conducting layer is ITO, Graphene or ZnO film.
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| CN105957928A (en) * | 2016-05-31 | 2016-09-21 | 华灿光电股份有限公司 | Resonant cavity light-emitting diode and manufacturing method therefor |
| CN108133992A (en) * | 2017-12-22 | 2018-06-08 | 中国科学院半导体研究所 | Optical pumping resonance enhancing upside-down mounting red-light LED device and preparation method thereof |
| CN109461753A (en) * | 2018-10-29 | 2019-03-12 | 北京协同创新研究院 | It is a kind of to inject upside-down mounting micron LED chip and preparation method thereof greatly |
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| CN109461753A (en) * | 2018-10-29 | 2019-03-12 | 北京协同创新研究院 | It is a kind of to inject upside-down mounting micron LED chip and preparation method thereof greatly |
| CN110581206A (en) * | 2019-09-18 | 2019-12-17 | 中南大学 | GaN-based Micro-LED and preparation method thereof |
| CN114069387A (en) * | 2020-08-07 | 2022-02-18 | 中国科学院宁波材料技术与工程研究所 | Novel nitride vertical structure laser and preparation method thereof |
| CN112331753A (en) * | 2020-11-06 | 2021-02-05 | 业成科技（成都）有限公司 | Light emitting diode structure |
| WO2022110005A1 (en) * | 2020-11-27 | 2022-06-02 | 苏州晶湛半导体有限公司 | Semiconductor light-emitting device and preparation method therefor |
| CN113270438A (en) * | 2021-04-30 | 2021-08-17 | 广东德力光电有限公司 | Manufacturing process of flip micro LED dot matrix |
| CN113270438B (en) * | 2021-04-30 | 2024-02-20 | 广东德力光电有限公司 | Manufacturing process of flip micro LED lattice |
| CN113284988A (en) * | 2021-05-12 | 2021-08-20 | 深圳市平深光电子科技有限公司 | RCLED lamp bead packaging process |
| CN113284988B (en) * | 2021-05-12 | 2022-02-01 | 深圳市平深光电子科技有限公司 | RCLED lamp bead packaging process |
| US11543104B2 (en) | 2021-05-12 | 2023-01-03 | Psg Opto Development Co., Ltd. | RCLED lamp bead packaging process and RCLED lamp bead packaged by the same |
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