CN105575774A - Method for correcting feature size deviation in phase shift mask and phase shift mask - Google Patents
Method for correcting feature size deviation in phase shift mask and phase shift mask Download PDFInfo
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- CN105575774A CN105575774A CN201410542513.5A CN201410542513A CN105575774A CN 105575774 A CN105575774 A CN 105575774A CN 201410542513 A CN201410542513 A CN 201410542513A CN 105575774 A CN105575774 A CN 105575774A
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Abstract
The application discloses a method for correcting feature size deviation in a phase shift mask and a phase shift mask. The phase shift mask consists of a non-light-transmitting layer and a phase shift layer. The method comprises the following steps: S1, measuring a feature size of a phase shift mask to find out a feature size deviation graph in the phase shift mask; S2, carrying out oxidation processing on the phase shift mask to form a protection layer on the surface of the phase shift layer; and S3, carrying out compensation etching on the phase shift layer to correct the feature size deviation graph. According to the method, after the protection layer is formed on the surface of the phase shift layer by carrying out oxidation processing on the phase shift mask, compensation etching is carried out on the phase shift layer, thereby achieving an objective of correction on the feature size deviation of the phase shift layer in the phase shift mask. When compensation etching is carried out on the phase shift layer, the etching rate of the phase shift layer can be reduced by the protection layer on the surface of the phase shift layer and the height deviation of the phase shift layer can be reduced, thereby reducing a phase difference value caused by compensation etching on the phase shift layer.
Description
Technical field
The application relates to the technical field of semiconductor integrated circuit, in particular to a kind of method and the phase-shift mask of revising characteristic size deviation in phase-shift mask.
Background technology
Photoetching is one of modal technique in the manufacturing process of semiconductor device.In the step of photoetching, circuitous pattern to be copied to by photomask in the photoresist layer on wafer by light source.At present, main photomask type has dualistic formula photomask and phase-shift mask two type.Wherein, phase-shift mask, usually by quartz base plate, is formed at the phase shift layer on quartz base plate and is formed at light non-transmittable layers (the being generally layers of chrome) composition on phase shift layer.When adopting phase-shift mask to carry out photoetching, phase shift layer can make the light be irradiated on phase shift layer produce the phase shift of 180 degree, thus the light between making through adjacent transparent area produces phase difference, and then there is destructive interference, hence improve adopt phase-shift mask form the resolution of figure.
In the manufacturing process of above-mentioned phase-shift mask, in environment, any change being difficult to predict all can cause the characteristic size generation deviation of figure (comprising light non-transmittable layers figure and phase shift layer figure).When adopting the phase-shift mask with characteristic size deviation to carry out photoetching, characteristic size deviation to cause on wafer form figure and produce defect, and then impact form the performance of device (particularly low line device, such as 28nm processing procedure and following line device).Therefore, after the making completing phase-shift mask, need to revise the characteristic size deviation in phase-shift mask, to make the mean difference (CDMTT) of the characteristic size in phase-shift mask lower than desired value.At present, the method that characteristic size deviation in phase-shift mask is revised is comprised the following steps: first, measure the characteristic size of phase-shift mask, to find out the characteristic size deviation figure in phase-shift mask; Then, etching is compensated to light non-transmittable layers (being generally layers of chrome), to revise characteristic size deviation.
But said method can only be revised the characteristic size deviation of light non-transmittable layers figure, cannot revise the characteristic size deviation of phase shift layer figure.This be due to: when compensating etching to phase shift layer, etching process not only can change the width (i.e. characteristic size) of phase shift layer, also can change the height of phase shift layer, and make the height of phase shift layer produce deviation (namely highly uneven), and the height tolerance of phase shift layer can cause the phase difference of phase shift layer to change, and its changing value is often greater than permissible value (+/-3 °), so reduce adopt phase-shift mask form the resolution of figure.Therefore, how the characteristic size deviation of phase shift layer in phase-shift mask is revised, and minimizing revises by the characteristic size deviation of phase shift layer the phase difference value caused, and becomes the technical problem that this area is urgently to be resolved hurrily.
Summary of the invention
The application aims to provide a kind of method and the phase-shift mask of revising characteristic size deviation in phase-shift mask, to realize revising the characteristic size deviation of phase shift layer in phase-shift mask, and reduces by phase shift layer being compensated to the phase difference value etching and cause.
To achieve these goals, this application provides a kind of method revising characteristic size deviation in phase-shift mask, this phase-shift mask comprises light non-transmittable layers and phase shift layer, the method comprises the following steps: the characteristic size of step S1, measurement phase-shift mask, to find out the characteristic size deviation figure in phase-shift mask; Step S2, oxidation processes is carried out to phase-shift mask, to form protective layer on the surface of phase shift layer; Step S3, etching is compensated to phase shift layer, to revise characteristic size deviation figure.
Further, the step finding out characteristic size deviation figure comprises: obtain the deviate between the characteristic size of phase shift layer and feature dimension of interest, and part phase shift layer large deviations value being greater than target deviation value is as characteristic size deviation figure.
Further, repeat step S1 to step S3 and be less than target deviation value to deviate.
Further, the technique of oxidation processes is that oxygen plasma body technology or UV irradiate.
Further, when adopting oxygen plasma body technology to carry out oxidation processes, O is adopted
2or O
3as oxidizing gas.
Further, adopt oxygen plasma body technology to carry out in the step of oxidation processes, the flow of oxidizing gas is 100 ~ 3000sccm, and the processing time is 1 ~ 10min, and treatment temperature is 100 ~ 200 DEG C.
Further, when adopting UV irradiation to carry out oxidation processes, employing wavelength is that the ultraviolet of 100 ~ 300nm irradiates.
Further, adopt UV to irradiate and carry out in the step of oxidation processes, ultraviolet luminous intensity is 100 ~ 2000mW/cm
2, treatment temperature is 200 ~ 300 DEG C, processing time 1 ~ 10min.
Further, compensate in the step of etching to phase shift layer, the technique of supplementing etching is dry etching.
Further, compensate in the step of etching to phase shift layer, supplement etching time be 1 ~ 10s.
Further, the material of light non-transmittable layers is chromium, and the material of phase shift layer is molybdenum SiClx.
Present invention also provides a kind of phase-shift mask, this phase-shift mask is formed by the method process that the application is above-mentioned.
Further, phase-shift mask is ArF photomask or KrF photomask.
The technical scheme of application the application; by carrying out oxidation processes to phase-shift mask with after form protective layer on the surface of phase shift layer; again etching is compensated to phase shift layer; thus achieve the object that the characteristic size deviation of phase shift layer in phase-shift mask is revised, and then decrease scrapping of phase-shift mask that the characteristic size deviation due to phase shift layer causes.Simultaneously; when compensating etching to phase shift layer; protective layer on phase shift layer surface can reduce the etch rate of phase shift layer; thus be conducive to revising characteristic size deviation; and be conducive to the height tolerance reducing phase shift layer; and then decrease and etch by compensating phase shift layer the phase difference value that causes, and improve adopt phase-shift mask form the resolution of figure.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the schematic flow sheet of the method for characteristic size deviation in the correction phase-shift mask that the application's execution mode provides.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
As what introduce in background technology, when compensating etching to phase shift layer, etching process can change the height of phase shift layer, and make the height of phase shift layer produce deviation (namely highly uneven), and the height tolerance of phase shift layer can cause the phase difference of phase shift layer to change, and its changing value is often greater than permissible value (+/-3 °), so reduce adopt phase-shift mask form the resolution of figure, cause to revise the characteristic size deviation of phase shift layer figure.
Present inventor studies for the problems referred to above, proposes a kind of method revising characteristic size deviation in phase-shift mask.This phase-shift mask comprises light non-transmittable layers and phase shift layer, and as shown in Figure 1, this modification method comprises the following steps: the characteristic size of step S1, measurement phase-shift mask, to find out the characteristic size deviation figure in phase-shift mask; Step S2, oxidation processes is carried out to phase-shift mask, to form protective layer on the surface of phase shift layer; Step S3, etching is compensated to phase shift layer, to revise characteristic size deviation figure.
Said method is by carrying out oxidation processes with after form protective layer on the surface of phase shift layer to phase-shift mask; again etching is compensated to phase shift layer; thus achieve the object that the characteristic size deviation of phase shift layer in phase-shift mask is revised, and then decrease scrapping of phase-shift mask that the characteristic size deviation due to phase shift layer causes.Simultaneously; when compensating etching to phase shift layer; protective layer on phase shift layer surface can reduce the etch rate of phase shift layer; thus be conducive to revising characteristic size deviation; and be conducive to the height tolerance reducing phase shift layer; and then decrease and etch by compensating phase shift layer the phase difference value that causes, and improve adopt phase-shift mask form the resolution of figure.
In above-mentioned phase-shift mask, the material of light non-transmittable layers and phase shift layer can set according to prior art.Generally, the most frequently used material of light non-transmittable layers is chromium, and the most frequently used material of phase shift layer is molybdenum SiClx.It should be noted that the material of light non-transmittable layers and phase shift layer is not limited in above-mentioned preferred implementation.
The illustrative embodiments of the said method provided according to the application will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, provide these execution modes be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
First, perform step S1, namely measure the characteristic size of phase-shift mask, to find out the characteristic size deviation figure in phase-shift mask.In this step, technical staff can adopt characteristic dimension measuring instrument to measure the characteristic size of phase-shift mask, conventional characteristic dimension measuring instrument has characteristic size scanning electron microscopy (CD-SEM) and atomic force microscope etc., and its concrete method of measurement can with reference to prior art.
After measuring the characteristic size of above-mentioned phase-shift mask, the characteristic size of light non-transmittable layers and phase shift layer can be obtained respectively.Wherein, the method that the characteristic size deviation of light non-transmittable layers is revised with reference to prior art, namely can be etched by compensating light non-transmittable layers to revise its characteristic size deviation.And the method focusing on that the characteristic size deviation of phase shift layer is revised of the application.Particularly, after above-mentioned measurement obtains the characteristic size of phase-shift mask, the step finding out the characteristic size deviation figure of phase shift layer comprises: obtain the deviate between the characteristic size of phase shift layer and feature dimension of interest, and part phase shift layer large deviations value being greater than target deviation value is as characteristic size deviation figure.Wherein, feature dimension of interest and target deviation value can require to set according to actual process, and such as feature dimension of interest is
target deviation value is ± 1nm etc.
After the characteristic size deviation figure finding out phase shift layer, defect inspection can also be carried out to phase-shift mask, to confirm that phase-shift mask does not have other defect.The method of defect inspection can be carried out with reference to prior art, does not repeat them here.
After completing steps S1, perform step S2, namely oxidation processes is carried out to phase-shift mask, to form protective layer on the surface of phase shift layer.The protective layer that this step is formed can reduce follow-up etch rate phase shift layer being compensated to etching; thus be conducive to revising characteristic size deviation; and be conducive to the height tolerance reducing phase shift layer, and then decrease by phase shift layer being compensated to the phase difference value etching and cause.
Those skilled in the art should know, and carry out oxidation processes relate to many-sided technical problem to phase-shift mask, and therefore, how obtaining mode and the technological parameter of suitable oxidation processes, is also the something having challenge.Inventor carries out great many of experiments and theoretical research to oxidation processes, finally finds that oxygen plasma body technology or UV can be adopted to irradiate carries out oxidation processes.Certainly, the mode of oxidation processes is not limited in above-mentioned preferred implementation.
Further, inventor also studies by experiment, obtains the optimal processing parameter of oxygen plasma body technology or UV irradiation.When adopting oxygen plasma body technology to carry out oxidation processes, preferably adopt O
2or O
3as oxidizing gas.Wherein, the flow of oxidizing gas is preferably 100 ~ 3000sccm, and the processing time is preferably 1 ~ 10min, and treatment temperature is preferably 100 ~ 200 DEG C.Now, form protective layer and can reduce follow-up etch rate phase shift layer being compensated to etching further, thus being more conducive to the height tolerance reducing phase shift layer, further reducing by phase shift layer being compensated to the phase difference value etching and cause.
When adopting UV irradiation to carry out oxidation processes, preferred employing wavelength is that the ultraviolet of 100 ~ 300nm irradiates.Wherein, ultraviolet luminous intensity is 100 ~ 2000mW/cm
2, treatment temperature is 200 ~ 300 DEG C, processing time 1 ~ 10min.Now, form protective layer and can reduce follow-up etch rate phase shift layer being compensated to etching further, thus being more conducive to the height tolerance reducing phase shift layer, further reducing by phase shift layer being compensated to the phase difference value etching and cause.
After completing steps S2, perform step S3, namely etching is compensated to phase shift layer, to revise characteristic size deviation figure.Preferably, the technique of supplementing etching is dry etching.Dry etching can be plasma etching, and etch period can be 1 ~ 10s.
After completing above-mentioned steps S1 to step S3, can also repeat step S1 to step S3, the deviate between the characteristic size and feature dimension of interest of phase shift layer is less than target deviation value, thus completes the correction to characteristic size deviation figure in phase shift layer.
In addition, present invention also provides a kind of phase-shift mask, this phase-shift mask is formed by the method process that the application is above-mentioned.In this phase-shift mask, the characteristic size deviation of phase shift layer is revised, and adopt phase-shift mask form figure resolution be improved.
Above-mentioned phase-shift mask can be ArF photomask or KrF photomask.Photomask when so-called ArF photomask refers to that above-mentioned phase-shift mask can carry out photoetching as adopting ArF light source, similarly, photomask when so-called KrF photomask refers to that above-mentioned phase-shift mask can carry out photoetching as adopting KrF light source.
Illustrative embodiments according to the application will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, provide these execution modes be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
A kind of method revising characteristic size deviation in phase-shift mask that the application provides is further illustrated below in conjunction with embodiment.
Embodiment 1
Present embodiments provide a kind of method revising characteristic size deviation in phase-shift mask.Wherein, this phase-shift mask comprises light non-transmittable layers (its material is chromium) and phase shift layer (its material is molybdenum SiClx), and this modification method comprises the following steps:
Step S1, adopt CD-SEM to measure the characteristic size of phase-shift mask, and obtain the deviate between the characteristic size of phase shift layer and feature dimension of interest, and part phase shift layer large deviations value being greater than target deviation value is as characteristic size deviation figure.Wherein, feature dimension of interest is
target deviation value is ± 1nm.
Step S2, employing oxygen plasma body technology carry out oxidation processes to phase-shift mask, wherein, adopt O
2as oxidizing gas, O
2flow be 3000sccm, the processing time is 10min, and treatment temperature is 200 DEG C.
Step S3, using plasma etching technics compensate etching to phase shift layer, and etch period is 1s.
Embodiment 2
Present embodiments provide a kind of method revising characteristic size deviation in phase-shift mask.Wherein, this phase-shift mask comprises light non-transmittable layers (its material is chromium) and phase shift layer (its material is molybdenum SiClx), and this modification method comprises the following steps:
Step S1, adopt CD-SEM to measure the characteristic size of phase-shift mask, and obtain the deviate between the characteristic size of phase shift layer and feature dimension of interest, and part phase shift layer large deviations value being greater than target deviation value is as characteristic size deviation figure.Wherein, feature dimension of interest is
target deviation value is ± 1nm.
Step S2, the ultraviolet adopting wavelength to be 100 ~ 300nm irradiate phase-shift mask, and wherein, ultraviolet luminous intensity is 2000mW/cm
2, treatment temperature is 200 DEG C, processing time 10min.
Step S3, using plasma etching technics compensate etching to phase shift layer, and etch period is 3s.
Comparative example 1
This comparative example provides a kind of method revising characteristic size deviation in phase-shift mask.Wherein, this phase-shift mask comprises light non-transmittable layers (its material is chromium) and phase shift layer (its material is molybdenum SiClx), and this modification method comprises the following steps:
Step S1, adopt CD-SEM to measure the characteristic size of phase-shift mask, and obtain the deviate between the characteristic size of phase shift layer and feature dimension of interest, and part phase shift layer large deviations value being greater than target deviation value is as characteristic size deviation figure.Wherein, feature dimension of interest is
target deviation value is ± 1nm.
Step S2, employing oxygen plasma body technology carry out oxidation processes to phase-shift mask, wherein, adopt O
2as oxidizing gas, O
2flow be 3000sccm, the processing time is 10min, and treatment temperature is 200 DEG C.
Step S3, using plasma etching technics compensate etching to phase shift layer, and etch period is 1s.
Test:
To measure in embodiment 1 to 2 and comparative example 3 phase-shift mask respectively before correction and revised phase place, its test result is respectively in table 1, table 2 and table 3.
Table 1
Table 2
Table 3
As can be seen from Table 1, in embodiment 1 phase-shift mask before correction and revised average phase changing value be 0.043333 degree, be less than permissible value (+/-3 °).As can be seen from Table 2, in embodiment 2 phase-shift mask before correction and revised average phase changing value be 0.093333 degree, be less than permissible value (+/-3 °).As can be seen from Table 3, in comparative example 1, phase-shift mask is-3.23333 degree with revised average phase changing value before correction, is greater than permissible value (+/-3 °).
Meanwhile, the application also to measure in embodiment 1 to 2 and comparative example 3 phase-shift mask before correction and revised characteristic size respectively.Test result shows, in embodiment 1, phase-shift mask with revised average feature size changing value is before correction
in embodiment 2, phase-shift mask with revised average feature size changing value is before correction
in comparative example 1, phase-shift mask with revised average feature size changing value is before correction
visible, embodiment 1 and embodiment 2 achieve the object revised the characteristic size deviation of phase shift layer in phase-shift mask.
As can be seen from the above description, the application's the above embodiments achieve following technique effect:
(1) the application is by carrying out oxidation processes with after form protective layer on the surface of phase shift layer to phase-shift mask; again etching is compensated to phase shift layer; thus achieve the object that the characteristic size deviation of phase shift layer in phase-shift mask is revised, and then decrease scrapping of phase-shift mask that the characteristic size deviation due to phase shift layer causes.
(2) when compensating etching to phase shift layer; protective layer on phase shift layer surface can reduce the etch rate of phase shift layer; thus be conducive to revising characteristic size deviation; and be conducive to the height tolerance reducing phase shift layer; and then decrease and etch by compensating phase shift layer the phase difference value that causes, and improve adopt phase-shift mask form the resolution of figure.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (13)
1. revise a method for characteristic size deviation in phase-shift mask, described phase-shift mask comprises light non-transmittable layers and phase shift layer, it is characterized in that, said method comprising the steps of:
Step S1, measure the characteristic size of described phase-shift mask, to find out the characteristic size deviation figure in described phase-shift mask;
Step S2, oxidation processes is carried out to described phase-shift mask, to form protective layer on the surface of described phase shift layer;
Step S3, etching is compensated to described phase shift layer, to revise described characteristic size deviation figure.
2. method according to claim 1, it is characterized in that, the step finding out described characteristic size deviation figure comprises: obtain the deviate between the characteristic size of described phase shift layer and feature dimension of interest, and part deviate described in described phase shift layer being greater than target deviation value is as described characteristic size deviation figure.
3. method according to claim 2, is characterized in that, repeating said steps S1 to described step S3 is less than described target deviation value to described deviate.
4. method according to claim 1, is characterized in that, the technique of described oxidation processes is that oxygen plasma body technology or UV irradiate.
5. method according to claim 4, is characterized in that, when adopting described oxygen plasma body technology to carry out described oxidation processes, adopts O
2or O
3as oxidizing gas.
6. method according to claim 5, is characterized in that, adopts described oxygen plasma body technology to carry out in the step of described oxidation processes, and the flow of described oxidizing gas is 100 ~ 3000sccm, and the processing time is 1 ~ 10min, and treatment temperature is 100 ~ 200 DEG C.
7. method according to claim 4, is characterized in that, when adopting described UV irradiation to carry out described oxidation processes, employing wavelength is that the ultraviolet of 100 ~ 300nm irradiates.
8. method according to claim 7, is characterized in that, adopt described UV to irradiate and carry out in the step of described oxidation processes, described ultraviolet luminous intensity is 100 ~ 2000mW/cm
2, treatment temperature is 200 ~ 300 DEG C, processing time 1 ~ 10min.
9. method according to claim 1, is characterized in that, compensates in the step of etching to described phase shift layer, and the technique of described supplementary etching is dry etching.
10. according to the method shown in claim 9, it is characterized in that, compensate in the step of etching to described phase shift layer, the time of described supplementary etching is 1 ~ 10s.
11. methods according to any one of claim 1 to 10, is characterized in that, the material of described light non-transmittable layers is chromium, and the material of described phase shift layer is molybdenum SiClx.
12. 1 kinds of phase-shift masks, is characterized in that, the method process of described phase-shift mask according to any one of claim 1 to 11 forms.
13. phase-shift masks according to claim 12, is characterized in that, described phase-shift mask is ArF photomask or KrF photomask.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021227910A1 (en) * | 2020-05-15 | 2021-11-18 | 长鑫存储技术有限公司 | Photomask and manufacturing method therefor |
| CN113741142A (en) * | 2020-05-29 | 2021-12-03 | 中芯国际集成电路制造(上海)有限公司 | Etching offset correction method and system and related equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0980741A (en) * | 1995-09-08 | 1997-03-28 | Toppan Printing Co Ltd | Method for correcting defect of halftone phase shift mask and halftone phase shift mask |
| US20020058188A1 (en) * | 2000-11-16 | 2002-05-16 | Nec Corporation | Method for rescuing levenson phase shift mask from abnormal difference in transmittance and phase difference between phase shifter and non-phase shifter |
| CN101937170A (en) * | 2009-06-30 | 2011-01-05 | 爱发科成膜株式会社 | Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask |
| KR20110044568A (en) * | 2009-10-23 | 2011-04-29 | 주식회사 하이닉스반도체 | Method for fabricating phase shift mask |
-
2014
- 2014-10-14 CN CN201410542513.5A patent/CN105575774A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0980741A (en) * | 1995-09-08 | 1997-03-28 | Toppan Printing Co Ltd | Method for correcting defect of halftone phase shift mask and halftone phase shift mask |
| US20020058188A1 (en) * | 2000-11-16 | 2002-05-16 | Nec Corporation | Method for rescuing levenson phase shift mask from abnormal difference in transmittance and phase difference between phase shifter and non-phase shifter |
| CN101937170A (en) * | 2009-06-30 | 2011-01-05 | 爱发科成膜株式会社 | Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask |
| KR20110044568A (en) * | 2009-10-23 | 2011-04-29 | 주식회사 하이닉스반도체 | Method for fabricating phase shift mask |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021227910A1 (en) * | 2020-05-15 | 2021-11-18 | 长鑫存储技术有限公司 | Photomask and manufacturing method therefor |
| CN113671788A (en) * | 2020-05-15 | 2021-11-19 | 长鑫存储技术有限公司 | Photomask and manufacturing method thereof |
| CN113671788B (en) * | 2020-05-15 | 2023-09-12 | 长鑫存储技术有限公司 | Photomask and manufacturing method thereof |
| CN113741142A (en) * | 2020-05-29 | 2021-12-03 | 中芯国际集成电路制造(上海)有限公司 | Etching offset correction method and system and related equipment |
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Application publication date: 20160511 |