CN105552139A - N type silicon solar cell and preparation method therefor - Google Patents
N type silicon solar cell and preparation method therefor Download PDFInfo
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- CN105552139A CN105552139A CN201510951824.1A CN201510951824A CN105552139A CN 105552139 A CN105552139 A CN 105552139A CN 201510951824 A CN201510951824 A CN 201510951824A CN 105552139 A CN105552139 A CN 105552139A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 117
- 239000010703 silicon Substances 0.000 title claims abstract description 117
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims description 108
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 230000010287 polarization Effects 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 7
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000002002 slurry Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000006388 chemical passivation reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010960 commercial process Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000034964 establishment of cell polarity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an n type silicon solar cell and a preparation method therefor. The n type silicon solar cell comprises an n type silicon substrate, wherein a p type doped layer, a front surface passivating layer and an anti-reflection layer are manufactured on the front surface of the n type silicon substrate from the bottom up in sequence; the front surface passivating layer is a monox or silicon nitride film layer; a front surface electrode is manufactured by penetrating the anti-reflection layer and the front surface passivating layer; the front surface electrode is connected with the p type doped layer; an n+ doped layer is formed on the back surface of the n type silicon substrate through a doping manner; a back surface passivating layer is manufactured on the n+ doped layer; the back surface passivating layer comprises a film layer prepared from a ferroelectric film material or a doped ferroelectric film material; a full-back metal film is manufactured on the back surface passivating layer; and a back surface electrode of the cell is formed by the full-back metal film. According to the n type silicon solar cell, the ferroelectric film material is adopted as the main raw material of the back surface passivating layer of the cell, so that the open-circuit voltage, the short-circuit current and the fill factor of the cell can be well improved, and the conversion efficiency of the cell can be improved.
Description
Technical field
The present invention relates to technical field of solar batteries, specifically a kind of N-shaped silicon solar cell and preparation method thereof.
Background technology
The blemish of crystal silicon solar energy battery has very large impact to battery performance, the open circuit voltage (V of battery
oc), short circuit current (J
sc), the major parameter such as fill factor, curve factor (FF) depends on the height of surface defect density to a great extent.The recombination losses of photo-generated carrier is one of main path of solar battery efficiency loss, and surface recombination is topmost recombination losses.Reducing surface defect density, reduce surface recombination, is the important means improving silicon solar cell energy conversion efficiency.Passivation effectively can reduce the compound of charge carrier, and then improves the conversion efficiency of solar cell.Passivation has chemical passivation and field passivation two kinds of methods usually.Chemical passivation typically refers to passivating material and silicon chip surface generation chemical reaction, Cheng Jian, and then minimizing surface silicon hangs key, reaches the object of passivation; Field passivation refers to that the nearly surperficial electronics of silicon chip is driven in the Coulombian field utilizing the charged ion in passivating material to produce or hole makes it away from surface and then the surface recombination reducing them, thus realizes the effect of passivation.
Generally all adopt passivating material to make passivation layer, to reduce surface defect density at the front and back of battery in prior art; And coated with antireflection film on the passivation layer of front, the positive surface charge of screen printing electrode slurry collection, overleaf passivation layer prints untouchable electrode slurry or adopts physical vaporous deposition preparation full back of the body metal electrode in order to collect back side electric charge after local openings.Now conventional passivating material comprises SiO
2(silicon dioxide is called for short silica), SiN
x(silicon nitride also can write Si
3n
4), Al
2o
3(alundum (Al2O3), be called for short aluminium oxide), a-Si:H(amorphous silicon hydride) or their laminations of being combined with each other.Wherein SiO
2be typical chemical passivation material, there is extraordinary passivation effect, but needing the high-temperature technology of about 800-900 DEG C to carry out thermal oxidation just can be prepared from, while serious power consumption, have impact on the inner and surperficial defect struchures of silicon chip.A-Si:H also has good passivation effect, but its preparation technology requires lower than 200 DEG C, incompatible with diffusion junctions crystal silicon cell commercial processes, is not usually considered for the surface passivation of diffusion junctions crystal silicon cell.SiN
xand Al
2o
3the principle based on field passivation, i.e. SiN
xinner containing fixing positive charge, Al
2o
3containing negative electrical charge, be applicable to passivation N-shaped and p-type silicon face respectively, there is certain passivation effect and and industry compatible, but this bi-material is all good dielectric material, there is the charge-conduction ability of non-constant, therefore be integrated into after in silicon solar cell, need lbg, form localized contact and the local passivation of metal electrode and silicon, while increasing process complexity and preparation cost, inevitably reduce the fill factor, curve factor of solar cell, limit the further lifting of efficiency.Have again, after lbg, in order to form localized contact, need and optionally print untouchable electric slurry, this will require that printing machine has technique of alignment (increase cost) accurately, will consume slurry (slurry occupies most of cost in crystal silicon solar energy battery preparation process), this is all unfavorable for the development of technology simultaneously.
Summary of the invention
An object of the present invention is just to provide a kind of N-shaped silicon solar cell, to solve the low problem of existing N-shaped silicon solar cell conversion efficiency.
Two of object of the present invention is just to provide a kind of preparation method of N-shaped silicon solar cell, and this preparation method can adopt lower manufacturing cost to prepare the higher N-shaped silicon solar cell of efficiency.
An object of the present invention is achieved in that a kind of N-shaped silicon solar cell, comprise N-shaped silicon substrate, be shaped with p doped layer, front passivation layer and antireflection layer from the bottom to top successively in the front of described N-shaped silicon substrate, described front passivation layer is silica or silicon nitride film layer; Be shaped with front electrode through described antireflection layer and described front passivation layer, described front electrode connects with described p doped layer; N+ doped layer is formed with by doping at the back side of described N-shaped silicon substrate, described n+ doped layer is shaped with backside passivation layer, described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, described backside passivation layer is shaped with and entirely carries on the back metallic film, this carries on the back the backplate that metallic film forms battery entirely.
Described backside passivation layer comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
Described backside passivation layer also comprises the rete be made up of silica or silicon nitride material, such as: backside passivation layer can be PZT and SiO
2or PZT and SiN
xlamination.
The thickness of described backside passivation layer is 3nm ~ 600nm.
Described backside passivation layer is 5% ~ 100% in the coverage rate at the N-shaped silicon substrate back side.
N-shaped silicon solar cell provided by the present invention, prepares passivation layer respectively at the front and back of N-shaped silicon substrate, and front passivation layer is the rete adopting existing silica or silicon nitride passivation material to make; Backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, ferroelectric thin-flim materials is as a kind of functional oxide thin-film material, because its inside exists spontaneous polarization field, therefore the back surface of crystal silicon solar energy battery is applied to as main passivating material, the life-span of photo-generated carrier can be improved to a great extent, promote the open circuit voltage of battery; In addition, adopt ferroelectric thin-flim materials to make backside passivation layer, it also can strengthen the back reflection of silicon solar cell except the effect having passivation effect, and this improves the short circuit current of solar cell to a great extent; Moreover although ferroelectric thin-flim materials also belongs to dielectric one class, the conductivity of material own is very low, but due to the existence of polarization field, cause the generation of polarization charge, compare general passivating material, the fill factor, curve factor (FF) of battery obtains good improvement; Natural localized contact is defined between backside passivation layer and N-shaped silicon substrate, completely avoid the use of the complicated technology such as laser ablation, fluting, namely the back side is without the need to electric slurry, only preparation full back of the body metal electrode can realize whole collections of back surface electric charge, which strongly simplifies technique, reduce the manufacturing cost of solar cell, ensure that the lifting of battery efficiency simultaneously.
Two of object of the present invention is achieved in that a kind of preparation method of N-shaped silicon solar cell, comprises the steps:
A, choose N-shaped silicon substrate, described N-shaped silicon substrate is cleaned and front, back side making herbs into wool;
B, make n+ doped layer at the back side of described N-shaped silicon substrate by doping, make p doped layer in the front of described N-shaped silicon substrate by doping;
C, on described p doped layer, prepare front passivation layer, described front passivation layer is silica or silicon nitride film layer; Described n+ doped layer prepares backside passivation layer, and is annealing in process 1min ~ 90min under the condition of 450 DEG C ~ 700 DEG C in temperature, described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping;
D, on the passivation layer of described front, prepare antireflection layer;
E, prepare front electrode by silk screen printing, sintering process, described front electrode connects with described p doped layer through described antireflection layer and described front passivation layer;
F, in described backside passivation layer preparation full back of the body metallic film using as backplate;
G, the N-shaped silicon solar cell of above-mentioned preparation to be polarized, concrete polarization process is: adopt the N-shaped silicon solar cell of stabilized voltage power supply to above-mentioned preparation to apply a constant voltage or constant current, constant voltage scope is 1V ~ 50V, constant current range is 0.01A ~ 10A, and the polarization time is 1s ~ 100s.
Also comprise the steps: before step b to carry out planarization to the back side of described N-shaped silicon substrate after step a.
The backside passivation layer formed in step c comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
The backside passivation layer formed in step c is 5% ~ 100% in the coverage rate at the N-shaped silicon substrate back side.
The thickness of the backside passivation layer formed in step c is 3nm ~ 600nm.
The preparation method of N-shaped silicon solar cell provided by the present invention, silica or silicon nitride film layer is prepared as front passivation layer according to existing technique in the front of silicon substrate, at the back side of silicon substrate by sol-gel process (sol-gel), physical vaporous deposition (PVD), the preparation such as chemical vapour deposition technique (CVD) or pulse laser deposition (PLD) backside passivation layer, and annealing in process is carried out to backside passivation layer, backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, such as backside passivation layer comprises lead zirconate titanate (PZT) rete, barium titanate (BaTiO
3be abbreviated as BTO) rete, bismuth ferrite (BFO) rete or barium strontium titanate (BST) rete, can also be that any two or three in PZT, BTO, BFO and bst film layer be combined with each other the lamination formed, can also be PZT, BTO, BFO of doping (such as adulterate La or Ni etc.) or bst film layer etc.The silica that prior art adopts or silicon nitride passivation layer material, operation principle is the coulomb electrostatic field produced based on the fixed charge of material internal, ferroelectric thin-flim materials of the present invention is as the main material of backside passivation layer, it is the ferroelectric properties based on ferroelectric thin-flim materials, namely there is polarization field in material internal, the generation root of polarization field is due to the special structure of ferroelectric thin-flim materials, i.e. perovskite structure, in perovskite structure, electric dipole moment is formed because positive and negative charge center does not overlap, polarization field is produced at material internal, this is the special physical mechanism of this class material, be applied to the back side of crystal silicon solar energy battery as passivating material, the open circuit voltage of battery can be improved well, short circuit current and fill factor, curve factor, embody excellent passivation effect.And, after preparing front electrode and backplate, adopt stabilized voltage power supply N-shaped silicon solar cell is polarized, polarization after battery FF will be improved significantly, improve the energy conversion efficiency of battery further.
Accompanying drawing explanation
Fig. 1 is the structural representation of N-shaped silicon solar cell in the present invention.
Fig. 2 is that after forming PZT backside passivation layer in the embodiment of the present invention 2, the SEM of silicon substrate back surface schemes.
Fig. 3 is the I-V curve synoptic diagram before and after N-shaped silicon solar cell polarization prepared in the embodiment of the present invention 2.
Fig. 4 is the XRD resolution chart of N-shaped silicon solar cell prepared in the embodiment of the present invention 2.
Fig. 5 is the I-V curve synoptic diagram of the N-shaped silicon solar cell that the embodiment of the present invention 2 and comparative example 1 are prepared respectively.
Fig. 6 is the transmissivity resolution chart of the N-shaped silicon solar cell that the embodiment of the present invention 2 and comparative example 1 are prepared respectively.
Fig. 7 is the photovoltage attenuation test figure of the N-shaped silicon solar cell that the embodiment of the present invention 2 and comparative example 1 are prepared respectively.
Embodiment
Embodiment 1, a kind of N-shaped silicon solar cell.
As shown in Figure 1, the N-shaped silicon solar cell that the present embodiment provides comprises N-shaped silicon substrate 5, is shaped with p doped layer 4, front passivation layer 3 and antireflection layer 2 from the bottom to top successively in the front of N-shaped silicon substrate 5, and the material that front passivation layer 3 adopts is silica (SiO
2) or silicon nitride (Si
3n
4).Prepare front electrode 1 by silk screen printing, sintering process, front electrode 1 connects with p doped layer 4 through antireflection layer 2 and front passivation layer 3.
N is formed with by doping at the back side of N-shaped silicon substrate 5
+doped layer 6, at n
+doped layer 6 is shaped with backside passivation layer 7, the main material of backside passivation layer 7 is ferroelectric thin-flim materials, ferroelectric thin-flim materials can be such as lead zirconate titanate (PZT), barium titanate (BTO), bismuth ferrite (BFO) or barium strontium titanate (BST) etc., can also doping (such as mixing La or Ni etc.) inside ferroelectric thin-flim materials.Backside passivation layer 7 can be PZT film layer, BTO rete, BFO rete or bst film layer, also can in above-mentioned rete doping, can also be that two or more rete any in above-mentioned rete is together with each other the laminated construction formed.In addition, backside passivation layer 7 can also comprise the rete be made up of silica or silicon nitride passivation material, that is: the rete be made up of silica or silicon nitride passivation material be combined with each other with the rete be made up of ferroelectric thin-flim materials or the ferroelectric thin-flim materials that adulterates and forms laminated construction, jointly forms backside passivation layer.Backside passivation layer 7 can be passed through sol-gel process (sol-gel) and prepare, and also can pass through the method preparations such as physical vaporous deposition (PVD), chemical vapour deposition technique (CVD) or pulse laser deposition (PLD).The thickness of backside passivation layer 7 can be controlled between 3nm ~ 600nm.The coverage rate of backside passivation layer 7 at N-shaped silicon substrate 5 back side can be 5% ~ 100%, that is: backside passivation layer 7 can cover N-shaped silicon substrate 5 back side completely, also only can cover the subregion at N-shaped silicon substrate 5 back side.Overleaf passivation layer 7 is shaped with full back of the body metallic film 8, this carries on the back the backplate that metallic film 8 forms battery entirely.
Embodiment 2, a kind of preparation method of N-shaped silicon solar cell.
The preparation method of the N-shaped silicon solar cell that the present embodiment provides comprises the steps:
1., choose N-shaped silicon substrate, and selected N-shaped silicon substrate is cleaned, to the making herbs into wool respectively of the front and back of N-shaped silicon substrate after cleaning, with the suede structure making its front and back all form similar pyramid shape.In suede structure, pyramidal average height general control is between 1 μm ~ 15 μm.
2., at the back side of N-shaped silicon substrate adopt phosphorus to diffuse to form heavily doped n+ doped layer, clean afterwards to remove PSG(phosphorosilicate glass); Carry out boron diffusion in the front of N-shaped silicon substrate to obtain p doped layer, and then form pn knot, clean afterwards to remove BSG(Pyrex).
3., on p doped layer prepare front passivation layer, front passivation layer is silica or silicon nitride film layer.
4., at n
+pZT backside passivation layer prepared by doped layer.Specifically: choose Pb
1.15(Zr
0.4ti
0.6) O
3precursor solution (having the Pb that 15% is excessive), to avoid, due to Pb volatilization in high temperature oxygen atmosphere processing procedure, causing PZT lack plumbous and affect pzt thin film performance; Adopting desk-top sol evenning machine to realize lead zirconate titanate precursor solution coats on the back side of N-shaped silicon substrate: first rotate 6 seconds with the speed of 500 revs/min, then through 4000 revs/min of High Rotation Speeds 40 seconds.Use board-like stove, the wet film after even glue is toasted 5 minutes at 200 DEG C, makes organic substance decomposing, volatilization.General control backside passivation layer is 5% ~ 100% in the coverage rate at the N-shaped silicon substrate back side, and the thickness controlling backside passivation layer is 3nm ~ 600nm.In the present embodiment, backside passivation layer all covers the N-shaped silicon substrate back side, and the thickness of backside passivation layer is 200nm.
5., by the silicon substrate scribbling PZT backside passivation layer carry out short annealing, annealing temperature is 450 DEG C-700 DEG C, and annealing time is 1min ~ 90min.
After formation PZT backside passivation layer, carry out sem test to the silicon substrate back side, acquired results is shown in Fig. 2.As shown in Figure 2, on the silicon chip of making herbs into wool, large pyramid or the pyramidal tower top of medium size do not have pzt thin film to distribute, and the bottom of pyramidion and Great Pyramid has all been covered with pzt thin film, therefore, adopt method of the present invention can form natural localized contact to wonderful workmanship excelling nature, completely avoid the use of the complicated technologies such as post laser melts, fluting, while Simplified flowsheet reduces costs, ensure that the performance boost of battery.
6., on the passivation layer of front, silicon nitride antireflection layer is prepared.
7., by silk-screen printing technique printed electronic slurry, sinter afterwards, form front electrode; Electric slurry after sintering naturally penetrates silicon nitride antireflection layer and front passivation layer connects with p doped layer.Ag-Al slurry is chosen time prepared by front electrode.
8., preparation full back of the body metallic film is using as backplate on passivation layer overleaf to adopt physical vaporous deposition, and the material of backplate is Ag.The metallic film that full back of the body metallic film and the whole back side of silicon substrate are completely covered.
9., the N-shaped silicon solar cell of above-mentioned preparation is polarized.This step is one of feature of the present invention.
The polarization field of ferroelectric thin-flim materials can change along with the change of extra electric field, and this is that it is different from the most outstanding feature of general passivating material.Therefore adopt the N-shaped silicon solar cell of stabilized voltage power supply to above-mentioned preparation to apply a constant voltage or constant current in this step, constant voltage scope is 1V ~ 50V, and constant current range is 0.01A ~ 10A, and the polarization time is 1s ~ 100s.Used in the present embodiment is the direct voltage of 5V.
After 8. step completes (before polarization) I-V test is carried out to obtained N-shaped silicon solar cell, and (polarization after) carries out I-V test again to obtained N-shaped silicon solar cell after 9. step completes, and acquired results is shown in Fig. 3.As seen from Figure 3, polarization process can change the photovoltaic performance of battery, and after polarization, the photovoltaic performance of battery obviously improves.
Carry out X-ray diffraction test to the N-shaped silicon solar cell after the polarization prepared by the present embodiment, acquired results is shown in Fig. 4, and the Perovskite Phase of pzt thin film exists as seen from Figure 4.
Comparative example 1
Compared with embodiment 2, N-shaped silicon solar cell prepared in this comparative example does not have PZT backside passivation layer, that is: 1., 2., 3., 6., 7. and 8. this comparative example comprises step in embodiment 2, does not have step 4., 5. and 9..
I-V test is carried out to the N-shaped silicon solar cell prepared by this comparative example, I-V test is carried out to the N-shaped silicon solar cell prepared by embodiment 2 simultaneously, acquired results is shown in Fig. 5, as seen from Figure 5, adds the photovoltaic performance that PZT passivation layer obviously can improve battery at the back side of battery.
Respectively transmissivity test is carried out to the N-shaped silicon solar cell prepared by this comparative example and the N-shaped silicon solar cell prepared by embodiment 2, acquired results as shown in Figure 6, as seen from Figure 6, PZT passivation layer, while having passivation effect as backside passivation layer, also can strengthen the back reflection of silicon solar cell.
Respectively photovoltage attenuation test is carried out to the N-shaped silicon solar cell prepared by this comparative example and the N-shaped silicon solar cell prepared by embodiment 2, acquired results is shown in Fig. 7, as seen from Figure 7, the introducing of PZT backside passivation layer can promote the life-span of inside battery photo-generated carrier.
Embodiment 3
Compared with embodiment 2, the present embodiment after step 1., step 2. before add step: planarization is carried out to the back side of N-shaped silicon substrate.The step of " planarization is carried out to the back side of N-shaped silicon substrate " is increased in the present embodiment, its objective is in order to the back side of pyramid shape is treated to the back side level and smooth a little, that is: by pyramidal top apex smoothing processing, make the sharp angled construction of the tower top pointed structures of pyramid structure and the lowest point become round and smooth, make pyramid surface become relative smooth by coarse simultaneously.After planarization is carried out to the back side of N-shaped silicon substrate, after follow-up formation backside passivation layer should be ensured, still can form natural localized contact, be convenient to follow-up direct preparation like this and entirely carry on the back metallic film as backplate.
In the present embodiment, after making herbs into wool, planarization is carried out to the back side of N-shaped silicon substrate, the passivation effect at the back side can be improved further, increase internal reflection rate, improve short circuit current.
Claims (10)
1. a N-shaped silicon solar cell, is characterized in that, comprises N-shaped silicon substrate, is shaped with p doped layer, front passivation layer and antireflection layer from the bottom to top successively in the front of described N-shaped silicon substrate, and described front passivation layer is silica or silicon nitride film layer; Be shaped with front electrode through described antireflection layer and described front passivation layer, described front electrode connects with described p doped layer; N is formed with by doping at the back side of described N-shaped silicon substrate
+doped layer, at described n
+doped layer is shaped with backside passivation layer, and described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, described backside passivation layer is shaped with and entirely carries on the back metallic film, and this carries on the back the backplate that metallic film forms battery entirely.
2. N-shaped silicon solar cell according to claim 1, is characterized in that, described backside passivation layer comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
3. N-shaped silicon solar cell according to claim 1, is characterized in that, described backside passivation layer also comprises the rete be made up of silica or silicon nitride material.
4. N-shaped silicon solar cell according to claim 1, is characterized in that, the thickness of described backside passivation layer is 3nm ~ 600nm.
5. N-shaped silicon solar cell according to claim 1, is characterized in that, described backside passivation layer is 5% ~ 100% in the coverage rate at the N-shaped silicon substrate back side.
6. a preparation method for N-shaped silicon solar cell, is characterized in that, comprises the steps:
A, choose N-shaped silicon substrate, described N-shaped silicon substrate is cleaned and front, back side making herbs into wool;
B, make n at the back side of described N-shaped silicon substrate by doping
+doped layer, makes p doped layer in the front of described N-shaped silicon substrate by doping;
C, on described p doped layer, prepare front passivation layer, described front passivation layer is silica or silicon nitride film layer; At described n
+doped layer prepares backside passivation layer, and is annealing in process 1min ~ 90min under the condition of 450 DEG C ~ 700 DEG C in temperature, described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping;
D, on the passivation layer of described front, prepare antireflection layer;
E, prepare front electrode by silk screen printing, sintering process, described front electrode connects with described p doped layer through described antireflection layer and described front passivation layer;
F, in described backside passivation layer preparation full back of the body metallic film using as backplate;
G, the N-shaped silicon solar cell of above-mentioned preparation to be polarized, concrete polarization process is: adopt the N-shaped silicon solar cell of stabilized voltage power supply to above-mentioned preparation to apply a constant voltage or constant current, constant voltage scope is 1V ~ 50V, constant current range is 0.01A ~ 10A, and the polarization time is 1s ~ 100s.
7. the preparation method of N-shaped silicon solar cell according to claim 6, is characterized in that, also comprises the steps: to carry out planarization to the back side of described N-shaped silicon substrate after step a before step b.
8. the preparation method of N-shaped silicon solar cell according to claim 6, it is characterized in that, the backside passivation layer formed in step c comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
9. the preparation method of N-shaped silicon solar cell according to claim 6, is characterized in that, the backside passivation layer formed in step c is 5% ~ 100% in the coverage rate at the N-shaped silicon substrate back side.
10. the preparation method of N-shaped silicon solar cell according to claim 6, is characterized in that, the thickness of the backside passivation layer formed in step c is 3nm ~ 600nm.
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| CN110648728A (en) * | 2019-10-09 | 2020-01-03 | 河北大学 | Method for predicting passivation effect of organic molecules on silicon surface |
| CN113921658A (en) * | 2021-10-20 | 2022-01-11 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of solar cell and solar cell |
| WO2024066940A1 (en) * | 2022-09-30 | 2024-04-04 | 隆基绿能科技股份有限公司 | Solar cell with spontaneous polarization structure |
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| US20030037815A1 (en) * | 2001-08-24 | 2003-02-27 | Jeong Kim | Solar cell using ferroelectric material(s) |
| CN102290450A (en) * | 2011-09-14 | 2011-12-21 | 苏州大学 | N-type crystalline silicon solar battery |
| CN104218113A (en) * | 2014-09-15 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N type PERC crystalline silicon solar cell and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20030037815A1 (en) * | 2001-08-24 | 2003-02-27 | Jeong Kim | Solar cell using ferroelectric material(s) |
| CN102290450A (en) * | 2011-09-14 | 2011-12-21 | 苏州大学 | N-type crystalline silicon solar battery |
| CN104218113A (en) * | 2014-09-15 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N type PERC crystalline silicon solar cell and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110648728A (en) * | 2019-10-09 | 2020-01-03 | 河北大学 | Method for predicting passivation effect of organic molecules on silicon surface |
| CN113921658A (en) * | 2021-10-20 | 2022-01-11 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of solar cell and solar cell |
| WO2024066940A1 (en) * | 2022-09-30 | 2024-04-04 | 隆基绿能科技股份有限公司 | Solar cell with spontaneous polarization structure |
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