CN105489708A - P-type silicon solar cell and preparing method thereof - Google Patents
P-type silicon solar cell and preparing method thereof Download PDFInfo
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- CN105489708A CN105489708A CN201610030388.9A CN201610030388A CN105489708A CN 105489708 A CN105489708 A CN 105489708A CN 201610030388 A CN201610030388 A CN 201610030388A CN 105489708 A CN105489708 A CN 105489708A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 130
- 239000010703 silicon Substances 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 238000007639 printing Methods 0.000 claims abstract description 13
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 31
- 238000002360 preparation method Methods 0.000 claims description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 20
- 230000010287 polarization Effects 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 7
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 7
- 210000002268 wool Anatomy 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000002002 slurry Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000006388 chemical passivation reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010960 commercial process Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a p-type silicon solar cell and a preparing method thereof. The p-type silicon solar cell comprises a p-type silicon substrate. The front surface of the p-type silicon solar cell is provided with an n<+> doped layer and a reflection reducing layer. Front anodes which penetrate the reflection reducing layer are manufactured. The front anodes are connected with the n<+> doped layer. The back surface of the p-type silicon substrate is provided with a back passivation layer. The back passivation layer comprises a film layer which is made of a ferroelectric film material or a doped ferroelectric film material. A back electrode is manufactured on the back passivation layer through a printing process and a sintering process. According to the p-type silicon solar cell, the ferroelectric film material is used as the main material of the back passivation layer of the cell, thereby greatly improving the open circuit voltage and shortcircuit current of the cell and improving conversion efficiency of the cell.
Description
Technical field
The present invention relates to technical field of solar batteries, specifically a kind of p-type silicon solar cell and preparation method thereof.
Background technology
The blemish of crystal silicon solar energy battery has very large impact to battery performance, the open circuit voltage (V of battery
oc), short circuit current (J
sc), the major parameter such as fill factor, curve factor (FF) depends on the height of surface defect density to a great extent.The recombination losses of photo-generated carrier is one of main path of solar battery efficiency loss, and surface recombination is topmost recombination losses.Reducing surface defect density, reduce surface recombination, is the important means improving silicon solar cell energy conversion efficiency.Passivation effectively can reduce the compound of charge carrier, and then improves the conversion efficiency of solar cell.Passivation has chemical passivation and field passivation two kinds of methods usually.Chemical passivation is passivating material and silicon chip surface generation chemical reaction normally, Cheng Jian, and then minimizing surface silicon hangs key, reaches the object of passivation; Field passivation refers to that the nearly surperficial electronics of silicon chip is driven in the Coulombian field utilizing the charged ion in passivating material to produce or hole makes it away from surface and then the surface recombination reducing them, thus realizes the effect of passivation.
Generally all adopt passivating material to make passivation layer, to reduce surface defect density at the front and back of battery in prior art; And coated with antireflection film on the passivation layer of front, the positive surface charge of screen printing electrode slurry collection, overleaf passivation layer prints untouchable electrode slurry or adopts physical vaporous deposition preparation full back of the body metal electrode in order to collect back side electric charge after local openings.Now conventional passivating material comprises SiO
2(silicon dioxide is called for short silica), SiN
x(silicon nitride also can write Si
3n
4), Al
2o
3(alundum (Al2O3), be called for short aluminium oxide), a-Si:H(amorphous silicon hydride) or their laminations of being combined with each other.Wherein SiO
2be typical chemical passivation material, there is extraordinary passivation effect, but needing the high-temperature technology of about 800-900 DEG C to carry out thermal oxidation just can be prepared from, while serious power consumption, have impact on the inner and surperficial defect struchures of silicon chip.A-Si:H also has good passivation effect, but its preparation technology requires lower than 200 DEG C, incompatible with diffusion junctions crystal silicon cell commercial processes, is not usually considered for the surface passivation of diffusion junctions crystal silicon cell.SiN
xand Al
2o
3the principle based on field passivation, i.e. SiN
xinner containing fixing positive charge, Al
2o
3containing negative electrical charge, be applicable to passivation N-shaped and p-type silicon face respectively, there is certain passivation effect and and industry compatible, but this bi-material is all good dielectric material, there is the charge-conduction ability of non-constant, therefore be integrated into after in silicon solar cell, need lbg, form localized contact and the local passivation of metal electrode and silicon, while increasing process complexity and preparation cost, inevitably reduce the fill factor, curve factor of solar cell, limit the further lifting of efficiency.Have again, after lbg, in order to form localized contact, need and optionally print untouchable electric slurry, this will require that printing machine has technique of alignment (increase cost) accurately, will consume slurry (slurry occupies most of cost in crystal silicon solar energy battery preparation process), this is all unfavorable for the development of technology simultaneously.
Summary of the invention
An object of the present invention is just to provide a kind of p-type silicon solar cell, to solve the low problem of existing p-type silicon solar cell conversion efficiency.
Two of object of the present invention is just to provide a kind of preparation method of p-type silicon solar cell, and this preparation method can adopt lower manufacturing cost to prepare the higher p-type silicon solar cell of efficiency.
An object of the present invention is achieved in that a kind of p-type silicon solar cell, comprises p-type silicon substrate, is shaped with n in the front of described p-type silicon substrate by diffusion technology or ion implantation technology etc.
+doped layer, at described n
+doped layer is shaped with antireflection layer; Described antireflection layer is shaped with front electrode by printing, sintering process, and described front electrode is through described antireflection layer and described n
+doped layer connects; Be shaped with backside passivation layer at the back side of described p-type silicon substrate, described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, and described backside passivation layer is shaped with backplate by printing, sintering process.
Described backside passivation layer comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
Described backside passivation layer also comprises the rete be made up of aluminium oxide and/or silicon nitride material.
The thickness of described backside passivation layer is 3nm ~ 600nm.
Described backside passivation layer is 5% ~ 100% in the coverage rate at the p-type silicon substrate back side.
Described p-type silicon substrate is monocrystalline or Multicrystalline p-type silicon substrate.
P-type silicon solar cell provided by the present invention, is formed with n successively in the front of p-type silicon substrate
+doped layer and antireflection layer, backside passivation layer is shaped with at the back side of p-type silicon substrate, backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, ferroelectric thin-flim materials is as a kind of functional oxide thin-film material, because its inside exists spontaneous polarization field, therefore be applied to the back surface of crystal silicon solar energy battery as main passivating material, the life-span of photo-generated carrier can be improved to a great extent, promote the open circuit voltage of battery; In addition, adopt ferroelectric thin-flim materials to make backside passivation layer, it also can strengthen the back reflection of silicon solar cell except the effect having passivation effect, and this improves the short circuit current of solar cell to a great extent; Define natural localized contact between backside passivation layer and p-type silicon substrate, completely avoid the use of the complicated technology such as laser ablation, fluting, which strongly simplifies technique, reduce the manufacturing cost of solar cell, ensure that the lifting of battery efficiency simultaneously.Conventional P ERC(PassivatedEmitterandRearCell, the passivated emitter back side) in battery, because there is Al
2o
3use, under illumination, Si and passivation layer interface charge density reduce, and cause passivation Quality Down, produce light-induced degradation (LID) effect.The present invention adopts ferroelectric thin-flim materials (as PZT) as passivation layer, and passivation mechanisms comes from polarization field, therefore can avoid this problem, reduces LID effect.
Two of object of the present invention is achieved in that a kind of preparation method of p-type silicon solar cell, comprises the steps:
A, choose p-type silicon substrate, described p-type silicon substrate is cleaned and front, back side making herbs into wool;
B, make n in the front of described p-type silicon substrate by doping
+doped layer, and the edge of p-type silicon substrate is etched;
C, at described n
+doped layer prepares antireflection layer;
D, prepare backside passivation layer at the back side of described p-type silicon substrate, and be annealing in process 1min ~ 90min under the condition of 450 DEG C ~ 700 DEG C in temperature, described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping;
E, by printing, sintering process prepares front electrode, and described front electrode is through described antireflection layer and described n
+doped layer connects;
F, by printing, sintering process prepares backplate in described backside passivation layer;
G, the p-type silicon solar cell of above-mentioned preparation to be polarized, concrete polarization process is: adopt the p-type silicon solar cell of stabilized voltage power supply to above-mentioned preparation to apply a constant voltage or constant current, constant voltage scope is 1V ~ 50V, constant current range is 0.01A ~ 10A, and the polarization time is 1s ~ 100s.
The silicon substrate of p-type described in step a is monocrystalline p-type silicon substrate; And also comprise the steps: before step b to carry out planarization to the back side of described p-type silicon substrate after step a.
The backside passivation layer formed in steps d comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
The thickness of the backside passivation layer formed in steps d is 3nm ~ 600nm.
The preparation method of p-type silicon solar cell provided by the present invention, prepares n in the front of silicon substrate according to existing technique
+doped layer and antireflection layer, at the back side of silicon substrate by preparation backside passivation layer such as sol-gel process (sol-gel), physical vaporous deposition (PVD), chemical vapour deposition technique (CVD) or pulse laser depositions (PLD), and annealing in process is carried out to backside passivation layer, backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, and such as backside passivation layer comprises lead zirconate titanate (PZT) rete, barium titanate (BaTiO
3be abbreviated as BTO) rete, bismuth ferrite (BFO) rete or barium strontium titanate (BST) rete, can also be that any two or three in PZT, BTO, BFO and bst film layer be combined with each other the lamination formed, can also be PZT, BTO, BFO of doping (such as adulterate La or Ni etc.) or bst film layer etc.The aluminium oxide that prior art adopts or silicon nitride passivation layer material, operation principle is the coulomb electrostatic field produced based on the fixed charge of material internal, ferroelectric thin-flim materials of the present invention is as the main material of backside passivation layer, it is the ferroelectric properties based on ferroelectric thin-flim materials, namely there is polarization field in material internal, the generation root of polarization field is due to the special structure of ferroelectric thin-flim materials, i.e. perovskite structure, in perovskite structure, electric dipole moment is formed because positive and negative charge center does not overlap, polarization field is produced at material internal, this is the special physical mechanism of this class material, be applied to the back side of crystal silicon solar energy battery as passivating material, the open circuit voltage of battery can be improved well, short circuit current and fill factor, curve factor, embody excellent passivation effect.And, after preparing front electrode and backplate, adopt stabilized voltage power supply p-type silicon solar cell is polarized, polarization after battery FF will be improved significantly, improve the energy conversion efficiency of battery further.
Accompanying drawing explanation
Fig. 1 is the structural representation of p-type silicon solar cell in the present invention.
Fig. 2 is that after forming PZT backside passivation layer in the embodiment of the present invention 2, the SEM of silicon substrate back surface schemes.
Fig. 3 is the XRD resolution chart of p-type silicon solar cell prepared in the embodiment of the present invention 2.
Fig. 4 is the quantum efficiency curve synoptic diagram of the p-type silicon solar cell that the embodiment of the present invention 2 and comparative example 1 are prepared respectively.
Embodiment
Embodiment 1, a kind of p-type silicon solar cell.
As shown in Figure 1, the p-type silicon solar cell that the present embodiment provides comprises p-type silicon substrate 4, and p-type silicon substrate 4 can be monocrystalline p-type silicon substrate, also can be Multicrystalline p-type silicon substrate.N is shaped with by diffusion technology or ion implantation technology etc. in the front of p-type silicon substrate 4
+doped layer 3, at n
+doped layer 3 is shaped with antireflection layer 2, antireflection layer 2 is shaped with front electrode 1 by silk screen printing, sintering process, front electrode 1 can pass antireflection layer 2 and n after sintering
+doped layer 3 connects.
Backside passivation layer 5 is shaped with at the back side of p-type silicon substrate 4, the main material of backside passivation layer 5 is ferroelectric thin-flim materials, ferroelectric thin-flim materials can be such as lead zirconate titanate (PZT), barium titanate (BTO), bismuth ferrite (BFO) or barium strontium titanate (BST) etc., can also doping (such as mixing La or Ni etc.) inside ferroelectric thin-flim materials.Backside passivation layer 5 can be PZT film layer, BTO rete, BFO rete or bst film layer, also can in above-mentioned rete doping, can also be that two or more rete any in above-mentioned rete is together with each other the laminated construction formed.In addition, backside passivation layer 5 can also comprise the rete be made up of aluminium oxide and/or silicon nitride passivation material, that is: the rete be made up of aluminium oxide and/or silicon nitride passivation material be combined with each other with the rete be made up of ferroelectric thin-flim materials or the ferroelectric thin-flim materials that adulterates and forms laminated construction, jointly forms backside passivation layer.Backside passivation layer 5 can be passed through sol-gel process (sol-gel) and prepare, and also can pass through the method preparations such as physical vaporous deposition (PVD), chemical vapour deposition technique (CVD) or pulse laser deposition (PLD).The thickness of backside passivation layer 5 can be controlled between 3nm ~ 600nm.The coverage rate of backside passivation layer 5 at p-type silicon substrate 4 back side can be 5% ~ 100%, that is: backside passivation layer 5 can blanket p-type silicon substrate 4 back side completely, also can the subregion at blanket p-type silicon substrate 4 back side.Overleaf passivation layer 5 is shaped with backplate 6 by printing, sintering process.
Embodiment 2, a kind of preparation method of p-type silicon solar cell.
The preparation method of the p-type silicon solar cell that the present embodiment provides comprises the steps:
1., choose p-type silicon substrate, and selected p-type silicon substrate is cleaned, to the making herbs into wool respectively of the front and back of p-type silicon substrate after cleaning.P-type silicon substrate can be monocrystalline p-type silicon substrate, also can be Multicrystalline p-type silicon substrate.When it is monocrystalline p-type silicon substrate, the general alkali that adopts carries out making herbs into wool to it, the pyramid light trapping structure that final formation is regular.When it is Multicrystalline p-type silicon substrate, general employing acid carries out making herbs into wool to it, shape surface, the rough hole light trapping structure that final formation is regular.In the present embodiment, p-type silicon substrate is monocrystalline p-type silicon substrate, and the pyramidal average height formed after making herbs into wool is 1 μm ~ 15 μm.
2., phosphorus is adopted to diffuse to form heavily doped n in the front of p-type silicon substrate
+doped layer, carries out etching edge afterwards, removes the doped layer at edge.
3., at n
+doped layer prepares antireflection layer, and in the present embodiment, antireflection layer is silicon nitride (SiN
x) rete, this silicon nitride film layer also has passivation, also can as the passivation layer in front.
4., PZT backside passivation layer is prepared at the back side of p-type silicon substrate.Specifically: choose Pb
1.15(Zr
0.4ti
0.6) O
3precursor solution (having the Pb that 15% is excessive), to avoid, due to Pb volatilization in high temperature oxygen atmosphere processing procedure, causing PZT lack plumbous and affect pzt thin film performance; Adopting desk-top sol evenning machine to realize lead zirconate titanate precursor solution coats on the back side of p-type silicon substrate: first rotate 6 seconds with the speed of 500 revs/min, then through 4000 revs/min of High Rotation Speeds 40 seconds.Use board-like stove, by the wet film after even glue 200
otoast 5 minutes under C, make organic substance decomposing, volatilization.General control backside passivation layer is 5% ~ 100% in the coverage rate at the p-type silicon substrate back side, and the thickness controlling backside passivation layer is 3nm ~ 600nm.Backside passivation layer whole blanket p-type silicon substrate back side in the present embodiment, and the thickness of backside passivation layer is 200nm.
5., by the silicon substrate scribbling PZT backside passivation layer carry out short annealing, annealing temperature is 450-700 DEG C, and annealing time is 1min ~ 90min.
After formation PZT backside passivation layer, carry out sem test to the silicon substrate back side, acquired results is shown in Fig. 2.In Fig. 2, (a) is ESEM exterior view, b () is ESEM sectional drawing, as can be seen from the figure, large pyramid or the pyramidal tower top of medium size do not have pzt thin film to distribute, and the bottom of pyramidion and Great Pyramid has all been covered with pzt thin film, therefore, method of the present invention is adopted can to form natural localized contact to wonderful workmanship excelling nature, completely avoid the use of the complicated technologies such as post laser melts, fluting, while Simplified flowsheet reduces costs, ensure that the performance boost of battery.
6., by printing (or evaporation) technique printed electronic slurry, sinter afterwards, form front electrode; Electric slurry after sintering penetrates silicon nitride antireflection layer and n naturally
+doped layer connects.Ag slurry is chosen time prepared by front electrode.
7., by typography printed electronic slurry, sinter afterwards, form backplate, backplate covers the whole back side of silicon substrate.After step 5. middle formation PZT backside passivation layer, large pyramid or the pyramidal tower top of medium size do not have pzt thin film to distribute, therefore, define natural localized contact between the backplate formed in this step and silicon substrate, without the need to carrying out the technique such as laser ablation, fluting again.Al slurry is chosen time prepared by backplate.
8., the p-type silicon solar cell of above-mentioned preparation is polarized.This step is one of feature of the present invention.
The polarization field of ferroelectric thin-flim materials can change along with the change of extra electric field, and this is that it is different from the most outstanding feature of general passivating material.Therefore adopt the p-type silicon solar cell of stabilized voltage power supply to above-mentioned preparation to apply a constant voltage or constant current in this step, constant voltage scope is 1V ~ 50V, and constant current range is 0.01A ~ 10A, and the polarization time is 1s ~ 100s.Used in the present embodiment is the direct voltage of 5V.
The present invention, by polarizing to p-type silicon solar cell, can change the photovoltaic performance of battery, and after polarization, the photovoltaic performance of battery obviously improves.
Carry out X-ray diffraction test to the p-type silicon solar cell after the polarization prepared by the present embodiment, acquired results is shown in Fig. 3, as seen from Figure 3 some characteristic peaks of PZT, shows that in battery, PZT material has good polycrystalline perovskite structure.
Comparative example 1
Compared with embodiment 2, p-type silicon solar cell prepared in this comparative example does not have PZT backside passivation layer, that is: 1., 2., 3., 6. and 7. this comparative example comprises step in embodiment 2, does not have step 4., 5. and 8..
P-type silicon solar cell prepared by this comparative example and embodiment 2 is carried out respectively to the test of open circuit voltage, short-circuit current density, fill factor, curve factor and efficiency, acquired results is in table 1.
Table 1
As seen from Table 1, the battery after PZT passivation layer is prepared compared with the battery without PZT in the back side, and open circuit voltage and short circuit current all have obvious lifting, and fill factor, curve factor can reduce slightly due to localized contact, but does not affect the lifting of cell power conversion efficiency.Visible, the silicon solar cell arranging PZT backside passivation layer has the absolute magnitude of 1% to increase than the battery efficiency without PZT.
Quantum efficiency test is carried out to the p-type silicon solar cell prepared by this comparative example, quantum efficiency test is carried out to the p-type silicon solar cell prepared by embodiment 2 simultaneously, acquired results is shown in Fig. 4, as seen from Figure 4, solar cell after PZT passivation, compare the solar cell without PZT, there is better long-wave response.
The solar cell without PZT compared by solar cell after PZT passivation, also there is the advantage that can strengthen silicon solar cell back reflection, and the introducing of PZT backside passivation layer can promote the life-span of inside battery photo-generated carrier, obviously improves the photovoltaic performance of battery.
Embodiment 3
Compared with embodiment 2, the present embodiment after step 1., step 2. before add step: planarization is carried out to the back side of p-type silicon substrate.The step of " planarization is carried out to the back side of p-type silicon substrate " is increased in the present embodiment, its objective is in order to the back side of pyramid shape is treated to the back side level and smooth a little, that is: by pyramidal top apex smoothing processing, make the sharp angled construction of the tower top pointed structures of pyramid structure and the lowest point become round and smooth, make pyramid surface become relative smooth by coarse simultaneously.After planarization is carried out to the back side of p-type silicon substrate, after follow-up formation backside passivation layer should be ensured, still can form natural localized contact, be convenient to like this prepare backplate subsequently through printing, sintering process.
In the present embodiment, after making herbs into wool, planarization is carried out to the back side of p-type silicon substrate, the passivation effect at the back side can be improved further, increase internal reflection rate, improve short circuit current.
Claims (10)
1. a p-type silicon solar cell, is characterized in that, comprises p-type silicon substrate, is shaped with n in the front of described p-type silicon substrate
+doped layer, at described n
+doped layer is shaped with antireflection layer; Described antireflection layer is shaped with front electrode by printing, sintering process, and described front electrode is through described antireflection layer and described n
+doped layer connects; Be shaped with backside passivation layer at the back side of described p-type silicon substrate, described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping, and described backside passivation layer is shaped with backplate by printing, sintering process.
2. p-type silicon solar cell according to claim 1, is characterized in that, described backside passivation layer comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
3. p-type silicon solar cell according to claim 1, is characterized in that, described backside passivation layer also comprises the rete be made up of aluminium oxide and/or silicon nitride material.
4. p-type silicon solar cell according to claim 1, is characterized in that, the thickness of described backside passivation layer is 3nm ~ 600nm.
5. p-type silicon solar cell according to claim 1, is characterized in that, described backside passivation layer is 5% ~ 100% in the coverage rate at the p-type silicon substrate back side.
6. p-type silicon solar cell according to claim 1, is characterized in that, described p-type silicon substrate is monocrystalline or Multicrystalline p-type silicon substrate.
7. a preparation method for p-type silicon solar cell, is characterized in that, comprises the steps:
A, choose p-type silicon substrate, described p-type silicon substrate is cleaned and front, back side making herbs into wool;
B, make n in the front of described p-type silicon substrate by doping
+doped layer, and the edge of p-type silicon substrate is etched;
C, at described n
+doped layer prepares antireflection layer;
D, prepare backside passivation layer at the back side of described p-type silicon substrate, and be annealing in process 1min ~ 90min under the condition of 450 DEG C ~ 700 DEG C in temperature, described backside passivation layer comprises the rete be made up of the ferroelectric thin-flim materials of ferroelectric thin-flim materials or doping;
E, by printing, sintering process prepares front electrode, and described front electrode is through described antireflection layer and described n
+doped layer connects;
F, by printing, sintering process prepares backplate in described backside passivation layer;
G, the p-type silicon solar cell of above-mentioned preparation to be polarized, concrete polarization process is: adopt the p-type silicon solar cell of stabilized voltage power supply to above-mentioned preparation to apply a constant voltage or constant current, constant voltage scope is 1V ~ 50V, constant current range is 0.01A ~ 10A, and the polarization time is 1s ~ 100s.
8. the preparation method of p-type silicon solar cell according to claim 7, is characterized in that, the silicon substrate of p-type described in step a is monocrystalline p-type silicon substrate; And also comprise the steps: before step b to carry out planarization to the back side of described p-type silicon substrate after step a.
9. the preparation method of p-type silicon solar cell according to claim 7, it is characterized in that, the backside passivation layer formed in steps d comprises a kind of or any two kinds of laminations be combined with each other in lead zirconate titanate rete, bismuth ferrite rete, barium titanate rete and barium strontium titanate rete.
10. the preparation method of p-type silicon solar cell according to claim 7, is characterized in that, the thickness of the backside passivation layer formed in steps d is 3nm ~ 600nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159094A (en) * | 2016-07-04 | 2016-11-23 | 陕西煤业化工技术研究院有限责任公司 | A kind of perovskite solar cell based on silica-based micro-nano structure and preparation method thereof |
| CN106252513A (en) * | 2016-08-02 | 2016-12-21 | 天津工业大学 | Perovskite solar cell based on matte light regime structure and preparation method thereof |
| CN107093644A (en) * | 2017-04-21 | 2017-08-25 | 江苏天雄电气自动化有限公司 | A kind of photovoltaic generating system with reactive power compensation system |
| CN108786827A (en) * | 2018-07-12 | 2018-11-13 | 辽宁大学 | A kind of compound double Z shaped photochemical catalyst BiFeO3/CuBi2O4/BaTiO3And its preparation method and application |
| CN110246923A (en) * | 2019-06-29 | 2019-09-17 | 深圳黑晶光电科技有限公司 | A kind of tandem type perovskite/homojunction silicon lamination solar cell and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030037815A1 (en) * | 2001-08-24 | 2003-02-27 | Jeong Kim | Solar cell using ferroelectric material(s) |
| CN101937944A (en) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | Preparation method of double-sided passivated crystalline silicon solar cell |
| CN102290450A (en) * | 2011-09-14 | 2011-12-21 | 苏州大学 | N-type crystalline silicon solar battery |
| CN102339902A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Method for making p-type solar battery by mask diffusion method and structure of p-type solar battery |
| CN103681889A (en) * | 2013-12-26 | 2014-03-26 | 中国科学院上海微系统与信息技术研究所 | Electret-structure-introduced efficient solar cell and preparing method thereof |
-
2016
- 2016-01-18 CN CN201610030388.9A patent/CN105489708B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030037815A1 (en) * | 2001-08-24 | 2003-02-27 | Jeong Kim | Solar cell using ferroelectric material(s) |
| CN101937944A (en) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | Preparation method of double-sided passivated crystalline silicon solar cell |
| CN102339902A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Method for making p-type solar battery by mask diffusion method and structure of p-type solar battery |
| CN102290450A (en) * | 2011-09-14 | 2011-12-21 | 苏州大学 | N-type crystalline silicon solar battery |
| CN103681889A (en) * | 2013-12-26 | 2014-03-26 | 中国科学院上海微系统与信息技术研究所 | Electret-structure-introduced efficient solar cell and preparing method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159094A (en) * | 2016-07-04 | 2016-11-23 | 陕西煤业化工技术研究院有限责任公司 | A kind of perovskite solar cell based on silica-based micro-nano structure and preparation method thereof |
| CN106252513A (en) * | 2016-08-02 | 2016-12-21 | 天津工业大学 | Perovskite solar cell based on matte light regime structure and preparation method thereof |
| CN107093644A (en) * | 2017-04-21 | 2017-08-25 | 江苏天雄电气自动化有限公司 | A kind of photovoltaic generating system with reactive power compensation system |
| CN108786827A (en) * | 2018-07-12 | 2018-11-13 | 辽宁大学 | A kind of compound double Z shaped photochemical catalyst BiFeO3/CuBi2O4/BaTiO3And its preparation method and application |
| CN108786827B (en) * | 2018-07-12 | 2021-04-13 | 辽宁大学 | Composite double-Z type photocatalyst BiFeO3/CuBi2O4/BaTiO3And preparation method and application thereof |
| CN110246923A (en) * | 2019-06-29 | 2019-09-17 | 深圳黑晶光电科技有限公司 | A kind of tandem type perovskite/homojunction silicon lamination solar cell and preparation method thereof |
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