CN1054702C - 制造半导体器件电容器的方法 - Google Patents
制造半导体器件电容器的方法 Download PDFInfo
- Publication number
- CN1054702C CN1054702C CN96107006A CN96107006A CN1054702C CN 1054702 C CN1054702 C CN 1054702C CN 96107006 A CN96107006 A CN 96107006A CN 96107006 A CN96107006 A CN 96107006A CN 1054702 C CN1054702 C CN 1054702C
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- CN
- China
- Prior art keywords
- film
- coating
- spin
- titanium
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
Abstract
Description
Claims (9)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR17479/95 | 1995-06-26 | ||
KR17479/1995 | 1995-06-26 | ||
KR1019950017479A KR0159013B1 (ko) | 1995-06-26 | 1995-06-26 | 반도체소자의 캐패시터 형성방법 |
KR1019950018912A KR100360150B1 (ko) | 1995-06-30 | 1995-06-30 | 반도체소자의캐패시터형성방법 |
KR18912/1995 | 1995-06-30 | ||
KR18911/95 | 1995-06-30 | ||
KR18912/95 | 1995-06-30 | ||
KR18911/1995 | 1995-06-30 | ||
KR1019950018911A KR100330572B1 (ko) | 1995-06-30 | 1995-06-30 | 반도체소자의캐패시터형성방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99123981.4A Division CN1122306C (zh) | 1995-06-26 | 1999-11-22 | 制造半导体器件电容器的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1143264A CN1143264A (zh) | 1997-02-19 |
CN1054702C true CN1054702C (zh) | 2000-07-19 |
Family
ID=27349191
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96107006A Expired - Lifetime CN1054702C (zh) | 1995-06-26 | 1996-06-26 | 制造半导体器件电容器的方法 |
CN99123981.4A Expired - Lifetime CN1122306C (zh) | 1995-06-26 | 1999-11-22 | 制造半导体器件电容器的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99123981.4A Expired - Lifetime CN1122306C (zh) | 1995-06-26 | 1999-11-22 | 制造半导体器件电容器的方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US5702970A (zh) |
JP (1) | JP2802262B2 (zh) |
CN (2) | CN1054702C (zh) |
Families Citing this family (31)
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US6087259A (en) * | 1996-06-24 | 2000-07-11 | Hyundai Electronics Industries Co., Ltd. | Method for forming bit lines of semiconductor devices |
KR100235949B1 (ko) * | 1996-06-27 | 1999-12-15 | 김영환 | 반도체 소자의 캐패시터 제조 방법 |
JP3587004B2 (ja) * | 1996-11-05 | 2004-11-10 | ソニー株式会社 | 半導体メモリセルのキャパシタ構造及びその作製方法 |
JP3003608B2 (ja) * | 1997-01-23 | 2000-01-31 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3060995B2 (ja) * | 1997-05-29 | 2000-07-10 | 日本電気株式会社 | 半導体容量素子構造および製造方法 |
JP3090198B2 (ja) * | 1997-08-21 | 2000-09-18 | 日本電気株式会社 | 半導体装置の構造およびその製造方法 |
TW406406B (en) * | 1998-01-12 | 2000-09-21 | Siemens Ag | DRAM-cells arrangement and its production method |
US6919168B2 (en) | 1998-01-13 | 2005-07-19 | Applied Materials, Inc. | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
KR100319879B1 (ko) * | 1998-05-28 | 2002-08-24 | 삼성전자 주식회사 | 백금족금속막식각방법을이용한커패시터의하부전극형성방법 |
US6063709A (en) * | 1998-09-08 | 2000-05-16 | Taiwan Semiconductor Manufacturing Company | Removal of SOG etchback residue by argon treatment |
US6495412B1 (en) | 1998-09-11 | 2002-12-17 | Fujitsu Limited | Semiconductor device having a ferroelectric capacitor and a fabrication process thereof |
US6332900B1 (en) | 1999-02-08 | 2001-12-25 | Wilson Greatbatch Ltd. | Physical vapor deposited electrode component and method of manufacture |
KR100756742B1 (ko) * | 1999-02-17 | 2007-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고밀도 ram 커패시터의 전극을 패턴화하기 위한 개선된마스킹 방법 및 에칭 공정 |
US6255122B1 (en) | 1999-04-27 | 2001-07-03 | International Business Machines Corporation | Amorphous dielectric capacitors on silicon |
US6388285B1 (en) | 1999-06-04 | 2002-05-14 | International Business Machines Corporation | Feram cell with internal oxygen source and method of oxygen release |
US6146991A (en) * | 1999-09-03 | 2000-11-14 | Taiwan Semiconductor Manufacturing Company | Barrier metal composite layer featuring a thin plasma vapor deposited titanium nitride capping layer |
US6492241B1 (en) * | 2000-04-10 | 2002-12-10 | Micron Technology, Inc. | Integrated capacitors fabricated with conductive metal oxides |
KR100587048B1 (ko) * | 2000-06-01 | 2006-06-07 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 캐패시터 제조방법 |
US7009240B1 (en) | 2000-06-21 | 2006-03-07 | Micron Technology, Inc. | Structures and methods for enhancing capacitors in integrated circuits |
KR100414948B1 (ko) * | 2000-06-30 | 2004-01-14 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
KR100387264B1 (ko) | 2000-12-29 | 2003-06-12 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
JP3364488B1 (ja) * | 2001-07-05 | 2003-01-08 | 東京エレクトロン株式会社 | 反応容器のクリーニング方法及び成膜装置 |
JP2003068882A (ja) * | 2001-08-08 | 2003-03-07 | Huabang Electronic Co Ltd | 記憶装置のストレージノード及びその製造方法 |
JP2003098992A (ja) | 2001-09-19 | 2003-04-04 | Nec Corp | ディスプレイの駆動方法、その回路及び携帯用電子機器 |
US6579766B1 (en) * | 2002-02-15 | 2003-06-17 | Infineon Technologies Ag | Dual gate oxide process without critical resist and without N2 implant |
JP2006097044A (ja) * | 2004-09-28 | 2006-04-13 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法 |
KR100722988B1 (ko) * | 2005-08-25 | 2007-05-30 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조방법 |
US20070279231A1 (en) * | 2006-06-05 | 2007-12-06 | Hong Kong University Of Science And Technology | Asymmetric rfid tag antenna |
US20080072973A1 (en) * | 2006-09-25 | 2008-03-27 | Honeywell International, Inc. | Rotary pneumatic damper for check valve |
KR101607263B1 (ko) | 2009-02-06 | 2016-03-30 | 삼성전자주식회사 | 유전층의 전기적 특성을 향상시킬 수 있는 반도체 소자의 제조방법 |
EP2584588B1 (en) | 2011-10-21 | 2017-10-04 | Imec | Method of forming MIM capacitor with Ru-comprising oxygen diffusion barrier |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045899A (en) * | 1989-12-01 | 1991-09-03 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory having stacked capacitor structure |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63155742A (ja) * | 1986-12-19 | 1988-06-28 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPH02184079A (ja) * | 1989-01-11 | 1990-07-18 | Seiko Epson Corp | 強誘電体記憶装置の形成法 |
JP2932484B2 (ja) * | 1989-01-18 | 1999-08-09 | ソニー株式会社 | 高融点金属多層膜形成法 |
JPH03108752A (ja) * | 1989-09-22 | 1991-05-08 | Nec Corp | 半導体装置 |
JPH05299601A (ja) * | 1992-02-20 | 1993-11-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3407204B2 (ja) * | 1992-07-23 | 2003-05-19 | オリンパス光学工業株式会社 | 強誘電体集積回路及びその製造方法 |
US5187638A (en) * | 1992-07-27 | 1993-02-16 | Micron Technology, Inc. | Barrier layers for ferroelectric and pzt dielectric on silicon |
US5348894A (en) * | 1993-01-27 | 1994-09-20 | Texas Instruments Incorporated | Method of forming electrical connections to high dielectric constant materials |
JP3224450B2 (ja) * | 1993-03-26 | 2001-10-29 | 日本酸素株式会社 | 酸化ルテニウムの成膜方法 |
JPH06291253A (ja) * | 1993-04-07 | 1994-10-18 | Oki Electric Ind Co Ltd | 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法 |
US5358889A (en) * | 1993-04-29 | 1994-10-25 | Northern Telecom Limited | Formation of ruthenium oxide for integrated circuits |
US5407855A (en) * | 1993-06-07 | 1995-04-18 | Motorola, Inc. | Process for forming a semiconductor device having a reducing/oxidizing conductive material |
JPH0730077A (ja) * | 1993-06-23 | 1995-01-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2658819B2 (ja) * | 1993-09-13 | 1997-09-30 | 日本電気株式会社 | 薄膜キャパシタ |
JPH0794680A (ja) * | 1993-09-22 | 1995-04-07 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2713178B2 (ja) * | 1994-08-01 | 1998-02-16 | 日本電気株式会社 | 半導体記憶装置およびその製造方法 |
US5489548A (en) * | 1994-08-01 | 1996-02-06 | Texas Instruments Incorporated | Method of forming high-dielectric-constant material electrodes comprising sidewall spacers |
KR0168346B1 (ko) * | 1994-12-29 | 1998-12-15 | 김광호 | 고유전율 재료를 이용한 커패시터 및 그 제조방법 |
JPH09260600A (ja) * | 1996-03-19 | 1997-10-03 | Sharp Corp | 半導体メモリ素子の製造方法 |
-
1996
- 1996-06-26 CN CN96107006A patent/CN1054702C/zh not_active Expired - Lifetime
- 1996-06-26 US US08/670,592 patent/US5702970A/en not_active Expired - Lifetime
- 1996-06-26 JP JP8166338A patent/JP2802262B2/ja not_active Expired - Lifetime
-
1997
- 1997-09-09 US US08/925,060 patent/US5953576A/en not_active Expired - Lifetime
-
1999
- 1999-06-21 US US09/336,698 patent/US6080594A/en not_active Expired - Lifetime
- 1999-11-22 CN CN99123981.4A patent/CN1122306C/zh not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045899A (en) * | 1989-12-01 | 1991-09-03 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory having stacked capacitor structure |
Also Published As
Publication number | Publication date |
---|---|
CN1143264A (zh) | 1997-02-19 |
JP2802262B2 (ja) | 1998-09-24 |
US5702970A (en) | 1997-12-30 |
JPH09116115A (ja) | 1997-05-02 |
CN1122306C (zh) | 2003-09-24 |
US5953576A (en) | 1999-09-14 |
CN1256511A (zh) | 2000-06-14 |
US6080594A (en) | 2000-06-27 |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HAIRYOKSA SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: Hairyoksa Semiconductor Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hyundai Electronics Industries Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: 658868 NB CORPORATION Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC. Effective date: 20120716 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120716 Address after: St. John's New Brunswick province of Canada Patentee after: 658868 N.B. Corporation Address before: Gyeonggi Do, South Korea Patentee before: Hairyoksa Semiconductor Co., Ltd. |
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C56 | Change in the name or address of the patentee |
Owner name: CONVERSANT INTELLECTUAL PROPERTY N.B.868 INC. Free format text: FORMER NAME: 658868 NB CORPORATION |
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CP01 | Change in the name or title of a patent holder |
Address after: St. John's New Brunswick province of Canada Patentee after: Covenson wisdom N.B.868 company Address before: St. John's New Brunswick province of Canada Patentee before: 658868 N.B. Corporation |
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CX01 | Expiry of patent term |
Granted publication date: 20000719 |
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EXPY | Termination of patent right or utility model |