CN105449017B - A kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths - Google Patents
A kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 106
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 28
- 230000031700 light absorption Effects 0.000 title claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 16
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- 229910000673 Indium arsenide Inorganic materials 0.000 description 15
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Abstract
The present invention relates to a kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths, periodicity In is used in InP substratexGa1‑xAs MQW Coupled Superlattices structures, each superlattice period include a quantum well layer and a barrier layer, use In of the thickness for axGa1‑xAs、0.53<X≤1 is used as quantum well layer, and thickness is b InyGa1‑yAs、0≤y<0.53 is used as barrier layer.The material structure of the present invention can be in the case where ensureing higher material quality, easily InGaAs light absorbs long wave cut-off wavelengths are extended between 1.7 3.0 μm as needed, particularly suitable for extending the photoresponse wavelength of InGaAs detectors, while have and other be widely applied prospect.
Description
Technical field
It is more particularly to a kind of to be used to realize that InGaAs light is inhaled the invention belongs to semiconductor optoelectronic information material and devices field
Receive the material structure of wavelength spread.
Background technology
InxGa1-xAs ternary alloy three-partalloys are one of most important Group III-V compound semiconductor photoelectron materials.It is by
Two kinds of direct band-gap semicondictor material alloys of InAs and GaAs form, it may have direct band gap, thus there is high optical absorption
Coefficient and internal quantum efficiency.Wherein with the In with InP substrate Lattice Matching0.53Ga0.47As material preparation process is the most ripe, should
With also the most extensive., can by optimizing the growth techniques such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD)
To go out the In matched with substrate lattice almost Perfect in InP (001) Grown0.53Ga0.47As materials.Its defect surface density
Can as little as 104/cm2, crystalline quality is high, and luminous mass is good.Intrinsic transition light absorbs long wavelength threshold is about 1.7 μm, absorption coefficient>
104cm-1.Important application has been obtained in terms of opto-electronic conversion.In based on InP substrate0.53Ga0.47As detectors are for 1550nm
The room temperature detectivity of optical wavelength is up to 1012cm·Hz1/2/ W, and there is good space radiation-resisting performance, thus in high speed fibre
The fields such as communication, near infrared spectroscopy measurement, space remote sensing image are widely applied.
But In0.53Ga0.47The photoresponse long wavelength threshold of As detectors is also only capable of reaching 1.7 μm, can not be to including abundant letter
1.7-3 μm of near infrared band of breath produces light absorbs.The wave band contains the characteristic absorpting spectruming line of many materials in nature, such as
Ice cloud, mineral products, land, the characteristic absorption peak of cloud layer are in 2.10-2.35 mu m wavebands, and CO, N2O、CH4Deng the characteristic absorption of gas
Peak is in 2.3-2.4 mu m wavebands.The wave band also includes high transmittance atmospheric window simultaneously, such as 1.4-1.9 μm, 2.0~2.5 μm.
Thus in Aero-Space, scanning imagery, detection plant water content and cloud, snow or geologic mapping etc. are led over the ground for the optical detection of the wave band
There is important application demand in domain.By lifting In components, can be prepared in InP substrate with the mutation of substrate lattice mismatch or
Person is counterfeit to match somebody with somebody InxGa1-xAs(0.53<X≤1) material, realize the light absorbs to 1.7-2.6 mu m wavebands and response.But lattice mismatch
The crystal defect density of material is caused to greatly increase, device performance is greatly reduced.Other detection materials of the wave band mainly have narrow
InAs, InSb, PbSe of forbidden band etc., it is to produce light absorbs using intrinsic band-to-band transition.Also all divide when applied to optical detection
Not Cun application limitation, as InAs, InSb are low in the optical detection rate of the wave band, PbSe response speeds are slow, the big need of InAs dark current
Refrigeration work etc..
It is therefore desirable to develop the new light absorbing material for the wave band, make it with the high absorption coefficient of light and quantum
While efficiency, there is high material crystalline quality, and then obtain longer carrier lifetime and transport property, improve the wave band
Optical detection performance.The new physicses characteristics such as the quantum limitation effect of quantum structure, electronic state coupling effect, phonon bottleneck effect are
New light absorbing material and light absorbs mechanism are developed, controlled material optical property opens a new approach, in practical application
Aspect is also very attractive.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of material for being used to realize the extension of InGaAs light absorption wavelengths
Structure, the material structure as needed easily can be grown InGaAs light absorbs in the case where ensureing higher material quality
Ripple cutoff wavelength is extended between 1.7-3.0 μm, particularly suitable for extending the photoresponse wavelength of InGaAs detectors, is had simultaneously
It is other to be widely applied prospect.
A kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths of the present invention, is used in InP substrate
Periodicity InxGa1-xAs MQW Coupled Superlattices structures, each superlattice period include a quantum well layer and one
Barrier layer, use In of the thickness for axGa1-xAs、0.53<X≤1 is used as quantum well layer, and thickness is b InyGa1-yAs、0≤y<
0.53 is used as barrier layer.
There is electronics and the coupling of the quantum state in hole, generation spreads over total between the MQW superlattice layer
New carrier micro-strip, light absorbs are produced by micro- band-to-band transition in electronics and hole.
The thickness a of the quantum well layer is 1-10nm.
The thickness b of the barrier layer is 1-10nm.
The light absorbs long wave cut-off wavelength of material can be according to application demand by changing the In components of SQW and potential barrier, changing
The thickness for becoming well layer and barrier layer or the structure that changes potential well and potential barrier are regulated and controled：The light absorbs of the material at room temperature
Long wave cut-off wavelength adjustable extent is 1.7-3 μm.
Strain compensation growth mechanism is used between the SQW and barrier layer of the material：SQW should for face internal pressure
Become, barrier layer is tensile strain in face, and the strain between quantum well layer and barrier layer mutually compensates for.
Quantum well layer can be by the In of one layer of fixed In componentxGa1-xAs materials form or by multiple differences
In components InxGa1-xAs potential well subgrade combines.Barrier layer can be by the In of one layer of fixed In componentyGa1-yAs materials
Form or by multiple different In components InyGa1-yAs potential barrier subgrade combines.
InGaAs material light absorbs long wave cut-off wavelengths are extended to outside the material more than 1.7 μm present invention determine that a kind of
Prolong structure, mainly include：
(1) mentality of designing of material
To realize that long wave cut-off wavelength is more than 1.7 μm of light absorbs, it is desirable to which it is small that the energy transition between states of material corresponds to energy difference
In 0.73eV, adoptable conventional transition mechanism has：
I, the interband intrinsic transition light absorbs with semiconductor bulk material of the energy gap less than 0.73eV are utilized；
Ii, utilize the intersubband transitions light absorbs in the valence band or conduction band of semiconductor quantum structure；
Iii, the transition light absorbs using the local energy levels such as impurity, defect in body material to conduction band or valence band continuous band.
And for transition absorption, its power (i.e. the absorption coefficient of light) to a certain wavelength light absorbs depends primarily on jump
Move the energy state density and Oscillator Strengthss of energy level.Typically, ground state energy state density is big, and the transition oscillator of base transition between states is strong
Degree is high, thus can realize the higher absorption coefficient of light and preferable optical detection application.And intersubband transitions, local energy level to connect
The density of states and transition oscillator of the transition of continuous interband are all far below the ground state band-to-band transition of body material, thus absorption coefficient also low number
Individual magnitude, preferable optical detection application can not be realized.Therefore need on the premise of transition energy is less than 0.73eV, searching has
The new material structure of the high absorption coefficient of light, high-quantum efficiency and highly crystalline quality or new transition mechanism.
Micro-strip theory refers to periodically entirely with quantum structure, if quantum structure spacing is sufficiently small so that adjacent amount
Localization current-carrying wavelet function in minor structure is able to produce obvious interaction, then occurs similar to energy level in body material
The quantized level of communization effect goes localization, and being formed to spread in whole quantum structure has the new of certain broadening
The micro-strip of band structure, i.e. carrier.Micro-strip has strong far above the energy state density of body material and the band-to-band transition oscillator of enhancing
Degree, therefore the transition light absorbs between conduction band electron micro-strip and valence band hole micro-strip can produce the light absorbs system far above body material
Number.
It can realize that strong light of the wavelength more than 1.7 μm is inhaled using micro-strip transition mechanism in InP, InGaAs material system
Receive.Its one side is advantageous in that material system growth technique maturation, is easy to be produced in enormous quantities with relatively low cost.It is another
Aspect, the introducing of periodicity quantum structure are advantageous to suppress defect accumulation, improve material totality crystalline quality.In InP substrate,
Pass through growth periodicity InxGa1-xAs SQWs, which form superlattice structure, can produce carrier micro-strip.Using high In ingredient
InxGa1-xAs(0.53<X≤1) SQW is used as, and use low In components InyGa1-yAs materials (0≤y<0.53) it is used as potential barrier
Layer.Electronics and hole quantized level in adjacent quantum wells couple to form conduction band micro-strip and valence band micro-strip respectively.In components are big
Compressive strain and tensile strain in face can be introduced respectively when 0.53, thus need to consider answering between SQW and barrier layer
Become compensation.Total tensile strain is offset using total compressive strain in quantum-well superlattice each cycle, the highly crystalline matter of multilayer can be kept
Amount growth is without occurring deformation relaxation.
(2) growth structure of material
Based on above mentality of designing, the present invention provides one kind and includes high In ingredient in InP/InGaAs material systems
InxGa1-xAs(0.53<X≤1) compressive strain quantum well layer and low In components InyGa1-yAs materials (0≤y<0.53) tensile strain potential barrier
The InGaAs strain compensation type MQW super crystal lattice materials of layer.There is adjacent quantum wells strong electronic state to couple, and in superlattices
The micro-strip in electronics and hole is inside formed respectively.Light absorption wavelength caused by its micro- band-to-band transition is most long can to expand to about 3 μm.Material
Expect structure as shown in Figure 1., can be by material according to the difference of In component x, y values, and the difference of SQW potential barrier thickness a, b
Light absorbs cutoff wavelength expand between 1.7-3.0 μm.
Specifically, substrate uses InP (001) substrate.On substrate epitaxial thickness be c (nm) InP or
In0.53Ga0.47As cushions.The quantum well structure in 2N cycle of extension on the buffer layer.A floor height In groups are included in each cycle
Divide InxGa1-xAs SQWs, wherein 0.53<X≤1, thickness are a (nm)；One layer of low In components InyGa1-yAs barrier materials, wherein
0≤y<0.53, thickness is b (nm).Wherein, the In of high In ingredientxGa1-xAs quantum well layers can use one layer of fixed In component
Material, the subgrade combining structure for including multiple different In components can also be used.The In of low In componentsyGa1-yAs barrier layers can be with
Using one layer of fixed In component material, the subgrade combining structure for including multiple different In components can also be used.Quantum well layer
Thickness a is typically between 1-10nm, to ensure quantum limitation effect.The thickness b of barrier layer typically also should between 1-10nm, with
Ensure interlayer electronic state stiffness of coupling.Thickness a, b and component x, y typically answer approximation to meet relationTo ensure
Strain compensation degree, suppress deformation relaxation.
Beneficial effect
(1) present invention using micro-strip transition produce light absorbs new mechanism, InP/InGaAs material systems in, utilize
Coupling quantum well superlattices produce micro-strip transition light absorbs, realize the extension of light absorption wavelength.
(2) the micro-strip density of states of the present invention is big, and Oscillator Strengthss are high between micro-strip, and the absorption coefficient of light is big, and practical value is high, can
To realize high-performance optical absorption or optical detection.
(3) present invention uses InxGa1-xAs/InyGa1-yAs quantum well structures, only by changing In components, thickness and subgrade
Structure freely can extend to the light absorbs long wave cut-off wavelength of quantum-well superlattice between 1.7~3.0 μm.Growth course
In be not related to extra element species, growth reliability is high, control facility.
(4) present invention is suppressed deformation relaxation, improved using SQW compressive strain, the strain compensation mechanism of potential barrier tensile strain
Material crystalline quality, it is easy to accomplish the growth of big thickness high quality superlattices, realize high optical absorption coefficient.
(5) preparation technology of InP/InGaAs materials involved in the present invention is very ripe, prepared monolayer material
Crystal mass is high, is advantageous to improve the reliability of quantum-well superlattice material.Meanwhile high yield and large-area uniformity are also favourable
In the device application of material.
Brief description of the drawings
Fig. 1 is the material epitaxy structural representation of device of the present invention；
Fig. 2 is the InAs/In that longwave absorption cutoff wavelength is 2.1 μm0.3Ga0.7The material structure of As MQW superlattices
Schematic diagram；
Fig. 3 left figure and right figure respectively corresponds to micro-strip energy band of the real space of material structure in Fig. 2 along the direction of growth
The micro-strip dispersion relation figure of (k) between structure chart and emptying；
Fig. 4 is the In that longwave absorption cutoff wavelength is 2.5 μm0.3Ga0.7As/InAs/In0.4Ga0.6As MQWs are super brilliant
The material structure schematic diagram of lattice；
Fig. 5 left figure and right figure respectively corresponds to micro-strip energy band of the real space of material structure in Fig. 4 along the direction of growth
The micro-strip dispersion relation figure of (k) between structure chart and emptying.
Embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention
Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content of the invention lectured has been read, people in the art
Member can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited
Scope.
Embodiment 1
Light absorbs long wave cut-off wavelength is the growth of 2.1 μm of InGaAs strain compensation type quantum-well superlattice structures：
The purpose of the present embodiment is to obtain the InGaAs strain compensation type SQWs that light absorbs long wave cut-off wavelength is 2.1 μm to surpass
Lattice material structure.SQW shown in the present embodiment, barrier layer using fixed In component InGaAs monolayer materials, do not include
Sublayer structure.In each superlattice period comprising the InAs compressive strain SQWs that one layer of 3nm is thick, one layer of 6nm is thick
In0.3Ga0.7As tensile strain potential barriers.Material entirety strain compensation degree is close to 100%.Specific material structure is as shown in Figure 2.Its
Structure includes following material successively from the bottom to top：
Material 1：Semi-insulating InP (001) substrate.
Material 2：Undoped InP cushions, thickness 200nm.
Material 3：The undoped InAs/In in 200 cycles0.3Ga0.7As MQW superlattice layers.
Wherein, the first layer of a cycle from the bottom to top of material 3 is the InAs that thickness is 3nm.The of 200th cycle
Two layers of In for thickness 6nm0.3Ga0.7As.The gross thickness of material 3 is 1800nm.
Prepared by material is realized by common molecular beam epitaxy method.The specific molecular beam epitaxial growth process of the material is such as
Under：
(1) InAs, In in the complete relaxation of InP (001) Grown are determined by preparation growth0.3Ga0.7As individual layers
The growth conditions such as the electron gun furnace temperature of film, underlayer temperature；
(2) after (semi-insulating) the progress oxide desorption processing to Epi-Ready InP (001) substrate, material is grown successively
Material 2 is to material 3, wherein every layer of thickness, component are all as described above.
(3) terminate growth after material 3 grows, decline underlayer temperature and source oven temperature degree in protective atmosphere, take out extension
Material carries out necessary test.
The InAs/In obtained0.3Ga0.7Energy band of the As strain compensation type MQW super crystal lattice materials along the direction of growth is such as
Shown in Fig. 3 left figures.The micro-strip dispersion relation of its k-space is as shown in Fig. 3 right figures.Corresponding ground state micro-strip transition energy is
0.583eV, light absorbs long wave cut-off wavelength are 2126nm.
Embodiment 2
Light absorbs long wave cut-off wavelength is the growth of 2.5 μm of InGaAs strain compensation type quantum-well superlattice structures：
The purpose of the present embodiment is to obtain the InGaAs strain compensation type SQWs that light absorbs long wave cut-off wavelength is 2.5 μm to surpass
Lattice material structure.SQW shown in the present embodiment is using fixed In component InGaAs monolayer materials, not comprising sublayer structure.Gesture
Barrier layer uses asymmetric barrier structure, includes the InGaAs sublayer structures of 2 different In components.Each superlattice period includes three
Layer material：Compressive strain SQW is the InAs that a thickness is 1.53nm, and SQW side is the thick In of one layer of 2nm0.3Ga0.7As
Potential barrier is strained, opposite side is the thick In of one layer of 2nm0.4Ga0.6As tensile strain potential barriers.Material entirety strain compensation degree close to
100%.Specific material structure is as shown in Figure 4.Its structure includes following material successively from the bottom to top：
Material 1：Semi-insulating InP (001) substrate.
Material 2：Undoped InP cushions, thickness 200nm.
Material 3：The undoped In in 200 cycles0.3Ga0.7As/InAs/In0.4Ga0.6As MQW superlattice layers.
Wherein, the first layer of a cycle from the bottom to top of material 3 is In thick 2nm0.4Ga0.6As.200th cycle
Third layer is thickness 2nm In0.3Ga0.7As.The gross thickness of material 3 is 1106nm.
Prepared by material is realized by common molecular beam epitaxy method.The specific molecular beam epitaxial growth process of the material is such as
Under：
(4) InAs, In in the complete relaxation of InP (001) Grown are determined by preparation growth0.4Ga0.6As and
In0.3Ga0.7The growth conditions such as the electron gun furnace temperatures of As single thin films, underlayer temperature；
(5) after (semi-insulating) the progress oxide desorption processing to Epi-Ready InP (001) substrate, material is grown successively
Material 2 is to material 3, wherein every layer of thickness, component are all as described above.
(6) terminate growth after material 3 grows, decline underlayer temperature and source oven temperature degree in protective atmosphere, take out extension
Material carries out necessary test.
The In obtained0.3Ga0.7As/InAs/In0.4Ga0.6The growth of As strain compensation type MQWs super crystal lattice material edge
The energy band in direction is as shown in Fig. 5 left figures.The micro-strip dispersion relation of its k-space is as shown in Fig. 5 right figures.Corresponding ground state micro-strip transition
Energy is 0.502eV, and light absorbs long wave cut-off wavelength is 2470nm.
Claims (5)
- A kind of 1. material structure for being used to realize the extension of InGaAs light absorption wavelengths, it is characterised in that：Using week in InP substrate Phase property InxGa1-xAs MQW Coupled Superlattices structures, each superlattice period include a quantum well layer and a gesture Barrier layer, use In of the thickness for axGa1-xAs、0.53<X≤1 is used as quantum well layer, and thickness is b InyGa1-yAs、0≤y<0.53 As barrier layer；Strain compensation growth mechanism is used between the quantum well layer and barrier layer of the material：Quantum well layer is face Interior compressive strain, barrier layer are tensile strain in face, and the strain between quantum well layer and barrier layer mutually compensates for；The thickness of quantum well layer A, the thickness b of component x and barrier layer, component y relation meet
- 2. a kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths according to claim 1, its feature exist In：The thickness a of the quantum well layer is 1-10nm.
- 3. a kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths according to claim 1, its feature exist In：The thickness b of the barrier layer is 1-10nm.
- 4. a kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths according to claim 1, its feature exist In：The light absorbs long wave cut-off wavelength adjustable extent of the material at room temperature is 1.7-3 μm.
- 5. a kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths according to claim 1, its feature exist In：Quantum well layer by one layer of fixed In component InxGa1-xAs materials form or by multiple different In components InxGa1-xAs gesture Trap subgrade combines；Barrier layer by one layer of fixed In component InyGa1-yAs materials form or by multiple different In components InyGa1-yAs potential barrier subgrade combines；Wherein, when quantum well layer, barrier layer include subgrade, average composition and subgrade total thickness The relation of degree meets
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5181086A (en) * | 1990-05-17 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Strained superlattice semiconductor structure |
| CN103077979A (en) * | 2013-01-07 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | Wavelength expansion InGaAs detector structure on GaAs substrate |
| CN103151418A (en) * | 2011-12-07 | 2013-06-12 | 有研半导体材料股份有限公司 | Double-barrier quantum well structure semiconductor infrared photoelectric detector and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5181086A (en) * | 1990-05-17 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Strained superlattice semiconductor structure |
| CN103151418A (en) * | 2011-12-07 | 2013-06-12 | 有研半导体材料股份有限公司 | Double-barrier quantum well structure semiconductor infrared photoelectric detector and manufacturing method thereof |
| CN103077979A (en) * | 2013-01-07 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | Wavelength expansion InGaAs detector structure on GaAs substrate |
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