CN105449017A - Material structure used for realizing InGaAs light absorption wavelength expansion - Google Patents
Material structure used for realizing InGaAs light absorption wavelength expansion Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 107
- 230000031700 light absorption Effects 0.000 title claims abstract description 42
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005036 potential barrier Methods 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 8
- 208000035126 Facies Diseases 0.000 claims description 2
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- 230000007704 transition Effects 0.000 description 26
- 229910000673 Indium arsenide Inorganic materials 0.000 description 15
- 238000010521 absorption reaction Methods 0.000 description 15
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 15
- 238000001514 detection method Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
Abstract
The invention relates to a material structure used for realizing InGaAs light absorption wavelength expansion. A periodical InxGa1-xAs multiple quantum well coupling superlattice structure is adopted on an InP substrate; each superlattice period comprises a quantum well layer and a barrier layer; the InxGa1-xAs with the thickness of a is used as the quantum well layer, wherein x is greater than 0.53 and less than or equal to 1; and the InyGa1-yAs with the thickness of b is used as the barrier layer, wherein y is greater than or equal to 0 and less than 0.53. The material structure can ensure a relatively high material quality; the InGaAs light absorption long-wave cut-off wavelength can be extended to 1.7-3.0 um conveniently according to needs; the material structure is particularly suitable for expanding the optical response wavelength of an InGaAs detector; and meanwhile, the material structure is wide in application prospects.
Description
Technical field
The invention belongs to semiconductor optoelectronic information material and devices field, particularly a kind of material structure for realizing the expansion of InGaAs light absorption wavelength.
Background technology
In
xga
1-xas ternary alloy three-partalloy is one of most important Group III-V compound semiconductor photoelectron material.It is formed by InAs and GaAs two kinds of direct gap semiconductor material alloys, also has direct band gap, thus have high optical absorption coefficient and internal quantum efficiency.Wherein with the In with InP substrate Lattice Matching
0.53ga
0.47as material preparation process is the most ripe, applies also extensive.By optimizing the growth techniques such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), can go out at InP (001) Grown the In mated with substrate lattice almost Perfect
0.53ga
0.47as material.Its defect surface density can be low to moderate 10
4/ cm
2, crystalline quality is high, and luminous mass is good.Intrinsic transition light absorption long wavelength threshold is about 1.7 μm, absorption coefficient >10
4cm
-1.Important application is obtained in opto-electronic conversion.Based on the In of InP substrate
0.53ga
0.47as detector for the room temperature detectivity of 1550nm optical wavelength up to 10
12cmHz
1/2/ W, and there is good space radiation-resisting performance, be thus widely applied in fields such as high speed fibre communication, near infrared spectroscopy measurement, space remote sensing imagings.
But In
0.53ga
0.47the photoresponse long wavelength threshold of As detector also only can reach 1.7 μm, cannot produce light absorption to the 1.7-3 μm of near infrared band including abundant information.This wave band contains the characteristic absorpting spectruming line of the many materials of occurring in nature, if the characteristic absorption peak of ice cloud, mineral products, land, cloud layer is at 2.10-2.35 mu m waveband, and CO, N
2o, CH
4deng the characteristic absorption peak of gas at 2.3-2.4 mu m waveband.This wave band also includes high permeability atmospheric window simultaneously, as 1.4-1.9 μm, and 2.0 ~ 2.5 μm.Thus the optical detection of this wave band is at Aero-Space scanning imagery over the ground, and there is important application demand in the detection field such as plant water content and cloud, snow or geologic mapping.By promoting In component, can prepare with the mutation of substrate lattice mismatch in InP substrate or counterfeitly joining In
xga
1-xas (0.53<x≤1) material, realizes the light absorption to 1.7-2.6 mu m waveband and response.But lattice mismatch causes the crystal defect density of material greatly to increase, device performance significantly reduces.Other detecting material of this wave band mainly contains InAs, InSb, PbSe etc. of low energy gap, is all to utilize intrinsic band-to-band transition to produce light absorption.Also there is application restriction all respectively when being applied to optical detection, as InAs, InSb are low in the optical detection rate of this wave band, PbSe response speed is slow, and InAs dark current is large needs refrigeration work etc.
Therefore be necessary to develop the novel light absorbing material for this wave band, make it while having the high absorption coefficient of light and quantum efficiency, there is high material crystalline quality, and then obtain longer carrier lifetime and transport property, improve the optical detection performance of this wave band.The new physics characteristic such as quantum limitation effect, electronic state coupling effect, phonon bottleneck effect of quantum structure is the new light absorbing material of exploitation and light absorption mechanism, controlled material optical property opens a new approach, also very attractive in practical application.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of material structure for realizing the expansion of InGaAs light absorption wavelength, this material structure can when ensureing higher material quality, easily InGaAs light absorption long wave cut-off function wavelength is extended between 1.7-3.0 μm as required, be particularly suitable for the photoresponse wavelength expanding InGaAs detector, there is other application prospect widely simultaneously.
A kind of material structure for realizing the expansion of InGaAs light absorption wavelength of the present invention is in InP substrate, adopt periodically In
xga
1-xas Multiple Quantum Well Coupled Superlattices structure, each superlattice period includes a quantum well layer and a barrier layer, adopts thickness to be the In of a
xga
1-xas, 0.53<x≤1 is as quantum well layer, and thickness is the In of b
yga
1-yas, 0≤y<0.53 are as barrier layer.
There is between described Multiple Quantum Well superlattice layer the quantum state coupling in electronics and hole, produce the micro-band of new charge carrier spreading over total, produce light absorption by micro-band-to-band transition in electronics and hole.
The thickness a of described quantum well layer is 1-10nm.
The thickness b of described barrier layer is 1-10nm.
The light absorption long wave cut-off function wavelength of material can according to application demand by changing the In component of quantum well and potential barrier, the thickness changing well layer and barrier layer or the structure that changes potential well and potential barrier regulates and controls: described material light absorption long wave cut-off function Wavelength tunable scope is at room temperature 1.7-3 μm.
Between the quantum well and barrier layer of described material, adopt strain compensation growth mechanism: quantum well is compressive strain in face, and barrier layer is tensile strain in face, the strain facies complementation between quantum well layer and barrier layer is repaid.
Quantum well layer can be the In being fixed In component by one deck
xga
1-xas material forms, and also can be by multiple different I n component I n
xga
1-xthe potential well subgrade of As combines.Barrier layer can be the In being fixed In component by one deck
yga
1-yas material forms, and also can be by multiple different I n component I n
xga
1-xthe potential barrier subgrade of As combines.
The present invention determine a kind of by InGaAs material light absorption long wave cut-off function wavelength spread to the material epitaxy structure being greater than 1.7 μm, mainly comprise:
(1) mentality of designing of material
Be greater than the light absorption of 1.7 μm for realizing long wave cut-off function wavelength, what require material can be less than 0.73eV by the corresponding energy difference of transition between states, and adoptable conventional transition mechanism has:
I, utilization have the interband intrinsic transition light absorption that energy gap is less than the semiconductor bulk material of 0.73eV;
Intersubband transitions light absorption in ii, the valence band utilizing semiconductor quantum structure or conduction band;
Iii, utilize the local energy level such as impurity, defect in body material to the transition light absorption of conduction band or valence band continuous band.
And for transition absorption, its power absorbed a certain wavelength light (i.e. the absorption coefficient of light) depends primarily on energy state density and the Oscillator Strengths of transition energy level.Typically, the Ground State Energy density of states is large, and the Oscillator Strengths of base transition between states is high, thus can realize the higher absorption coefficient of light and good optical detection application.And the density of states of transition between intersubband transitions, local energy level to continuous band and transition oscillator are all far below the ground state band-to-band transition of body material, thus absorption coefficient also low several magnitude, cannot realize good optical detection application.Therefore need under transition energy is less than the prerequisite of 0.73eV, find and there is the high absorption coefficient of light, the new material structure of high-quantum efficiency and high crystalline quality or new transition mechanism.
Micro-band theory refers in periodically complete same quantum structure, if quantum structure spacing is enough little, the localization charge carrier wave function in adjacent quantum structure is made to be produced obvious interaction, then there will be the quantized level being similar to energy level communization effect in body material and go localization, and form the new band structure with certain broadening spread in whole quantum structure, i.e. micro-band of charge carrier.Micro-band has the band-to-band transition oscillator strength of energy state density far above body material and enhancing, and therefore the transition light absorption of the micro-band of conduction band electron and the micro-interband of valence band hole can produce the absorption coefficient of light far above body material.
In InP, InGaAs material system, utilize micro-band transition mechanism can realize the strong light absorption of wavelength more than 1.7 μm.Its one side benefit is that this material system growth technique is ripe, is convenient to produce in enormous quantities with lower cost.On the other hand, periodically the introducing of quantum structure is conducive to suppressing defect accumulation, improves all materials crystalline quality.In InP substrate, by growth periodicity In
xga
1-xas quantum well forms superlattice structure can produce the micro-band of charge carrier.Adopt high In ingredient In
xga
1-xas (0.53<x≤1) as quantum well, and adopts low In component I n
yga
1-yas material (0≤y<0.53) is as barrier layer.Electronics in adjacent quantum wells and hole quantized level are coupled respectively and form the micro-band of conduction band and the micro-band of valence band.Respectively can compressive strain and tensile strain in lead-in surface when In component is greater than or less than 0.53, thus need to consider the strain compensation between quantum well and barrier layer.Utilize the total compressive strain in quantum-well superlattice each cycle to offset total tensile strain, multilayer height crystalline quality can be kept to grow and deformation relaxation do not occur.
(2) growth structure of material
Based on above mentality of designing, the present invention, in InP/InGaAs material system, provides one and comprises high In ingredient In
xga
1-xas (0.53<x≤1) compressive strain quantum well layer and low In component I n
yga
1-ythe InGaAs strain compensation type Multiple Quantum Well super crystal lattice material of As material (0≤y<0.53) tensile strain barrier layer.Adjacent quantum wells has the coupling of strong electronic state, and in superlattice, form micro-band in electronics and hole respectively.The light absorption wavelength that its micro-band-to-band transition produces is the longest can expand to about 3 μm.Material structure as shown in Figure 1.According to the difference of In component x, y value, and quantum well potential barrier thickness a, b difference, the light absorption cut-off wavelength of material can be expanded between 1.7-3.0 μm.
Specifically, substrate adopts InP (001) substrate.On substrate, epitaxial thickness is InP or In of c (nm)
0.53ga
0.47as resilient coating.The quantum well structure in extension 2N cycle on the buffer layer.One deck high In ingredient In is comprised in each cycle
xga
1-xas quantum well, wherein 0.53<x≤1, thickness is a (nm); The low In component I n of one deck
yga
1-yas barrier material, wherein 0≤y<0.53, thickness is b (nm).Wherein, the In of high In ingredient
xga
1-xas quantum well layer can adopt one deck to fix In component material, also can adopt the subgrade combining structure comprising multiple different I n component.The In of low In component
yga
1-yas barrier layer can adopt one deck to fix In component material, also can adopt the subgrade combining structure comprising multiple different I n component.The thickness a of quantum well layer generally between 1-10nm, to guarantee quantum limitation effect.The thickness b of barrier layer generally also should between 1-10nm, to ensure interlayer electronic state stiffness of coupling.Thickness a, b and component x, y generally should be similar to and meet relation
to ensure strain compensation degree, suppress deformation relaxation.
beneficial effect
(1) the present invention adopts micro-band transition to produce the new mechanism of light absorption, InP/InGaAs material system in, utilize coupling quantum well superlattice to produce micro-band transition light absorption, realize the expansion of light absorption wavelength.
(2) the micro-band density of states of the present invention is large, and micro-band-to-band transition oscillator strength is high, and the absorption coefficient of light is large, and practical value is high, can realize high-performance optical and absorb or optical detection.
(3) the present invention adopts In
xga
1-xas/In
yga
1-yas quantum well structure, can freely by between light absorption long wave cut-off function wavelength spread to 1.7 ~ 3.0 of quantum-well superlattice μm by means of only change In component, thickness and sublayer structure.Do not relate to extra element kind in growth course, growth reliability is high, and it is convenient to control.
(4) the present invention adopts the strain compensation mechanism of quantum well compressive strain, potential barrier tensile strain, suppresses deformation relaxation, improves material crystalline quality, be easy to the growth realizing heavy thickness high-quality superlattice, realize high optical absorption coefficient.
(5) preparation technology of InP/InGaAs material involved in the present invention is very ripe, and prepared monolayer material crystal mass is high, is conducive to the reliability improving quantum well super crystal lattice material.Meanwhile, high yield and large-area uniformity are also conducive to the device application of material.
Accompanying drawing explanation
Fig. 1 is the material epitaxy structural representation of device of the present invention;
Fig. 2 to be longwave absorption cut-off wavelength be InAs/In of 2.1 μm
0.3ga
0.7the material structure schematic diagram of As Multiple Quantum Well superlattice;
The left figure of Fig. 3 and right figure is respectively the real space corresponding to material structure in Fig. 2 along micro-band dispersion relation figure of (k) between micro-band band structure figure and turned letter of the direction of growth;
Fig. 4 to be longwave absorption cut-off wavelength be In of 2.5 μm
0.3ga
0.7as/InAs/In
0.4ga
0.6the material structure schematic diagram of As Multiple Quantum Well superlattice;
The left figure of Fig. 5 and right figure is respectively the real space corresponding to material structure in Fig. 4 along micro-band dispersion relation figure of (k) between micro-band band structure figure and turned letter of the direction of growth.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Embodiment 1
Light absorption long wave cut-off function wavelength is the growth of the InGaAs strain compensation type quantum-well superlattice structure of 2.1 μm:
The present embodiment object obtains the InGaAs strain compensation type quantum-well superlattice material structure that light absorption long wave cut-off function wavelength is 2.1 μm.Quantum well shown in the present embodiment, barrier layer all adopt fixing In component I nGaAs monolayer material, all do not comprise sublayer structure.The InAs compressive strain quantum well that one deck 3nm is thick is comprised, the In that one deck 6nm is thick in each superlattice period
0.3ga
0.7as tensile strain potential barrier.Material monolithic strain compensation degree is close to 100%.Concrete material structure as shown in Figure 2.Its structure comprises following material from the bottom to top successively:
Material 1: semi-insulating InP (001) substrate.
Material 2: undoped InP resilient coating, thickness 200nm.
The undoped InAs/In in a material 3:200 cycle
0.3ga
0.7as Multiple Quantum Well superlattice layer.
Wherein, the InAs of the ground floor of material 3 one-period to be from the bottom to top thickness be 3nm.The second layer in the 200th cycle is the In of thickness 6nm
0.3ga
0.7as.Material 3 gross thickness is 1800nm.
Material preparation is realized by common molecular beam epitaxy method.The concrete molecular beam epitaxial growth process of this material is as follows:
(1) InAs, the In in the complete relaxation of InP (001) Grown is determined by preparation growth
0.3ga
0.7the growth conditions such as electron gun furnace temperature, underlayer temperature of As single thin film;
(2) after carrying out the process of oxide desorption to Epi-ReadyInP (001) substrate (semi-insulating), growth material 2 to material 3 successively, wherein thickness, the component of every layer are all described above.
(3) material 3 terminates growth after growing, and at protective atmosphere decline underlayer temperature and source oven temperature degree, takes out epitaxial material and carries out necessary test.
The InAs/In obtained
0.3ga
0.7as strain compensation type Multiple Quantum Well super crystal lattice material can be with shown in figure as left in Fig. 3 along the direction of growth.Shown in micro-band dispersion relation figure as right in Fig. 3 of its k-space.The corresponding micro-band transition energy of ground state is 0.583eV, and light absorption long wave cut-off function wavelength is 2126nm.
Embodiment 2
Light absorption long wave cut-off function wavelength is the growth of the InGaAs strain compensation type quantum-well superlattice structure of 2.5 μm:
The present embodiment object obtains the InGaAs strain compensation type quantum-well superlattice material structure that light absorption long wave cut-off function wavelength is 2.5 μm.Quantum well shown in the present embodiment adopts fixing In component I nGaAs monolayer material, does not comprise sublayer structure.Barrier layer adopts asymmetric barrier structure, comprises the InGaAs sublayer structure of 2 different I n components.Each superlattice period comprises trilaminate material: the InAs of compressive strain quantum well to be thick layer be 1.53nm, quantum well side is the In that one deck 2nm is thick
0.3ga
0.7as tensile strain potential barrier, opposite side is the In that one deck 2nm is thick
0.4ga
0.6as tensile strain potential barrier.Material monolithic strain compensation degree is close to 100%.Concrete material structure as shown in Figure 4.Its structure comprises following material from the bottom to top successively:
Material 1: semi-insulating InP (001) substrate.
Material 2: undoped InP resilient coating, thickness 200nm.
The undoped In in a material 3:200 cycle
0.3ga
0.7as/InAs/In
0.4ga
0.6as Multiple Quantum Well superlattice layer.
Wherein, the ground floor of material 3 one-period is from the bottom to top the In that 2nm is thick
0.4ga
0.6as.The third layer in the 200th cycle is the In of thickness 2nm
0.3ga
0.7as.Material 3 gross thickness is 1106nm.
Material preparation is realized by common molecular beam epitaxy method.The concrete molecular beam epitaxial growth process of this material is as follows:
(4) InAs, the In in the complete relaxation of InP (001) Grown is determined by preparation growth
0.4ga
0.6as and In
0.3ga
0.7the growth conditions such as electron gun furnace temperature, underlayer temperature of As single thin film;
(5) after carrying out the process of oxide desorption to Epi-ReadyInP (001) substrate (semi-insulating), growth material 2 to material 3 successively, wherein thickness, the component of every layer are all described above.
(6) material 3 terminates growth after growing, and at protective atmosphere decline underlayer temperature and source oven temperature degree, takes out epitaxial material and carries out necessary test.
The In obtained
0.3ga
0.7as/InAs/In
0.4ga
0.6as strain compensation type Multiple Quantum Well super crystal lattice material can be with shown in figure as left in Fig. 5 along the direction of growth.Shown in micro-band dispersion relation figure as right in Fig. 5 of its k-space.The corresponding micro-band transition energy of ground state is 0.502eV, and light absorption long wave cut-off function wavelength is 2470nm.
Claims (6)
1. for realizing a material structure for InGaAs light absorption wavelength expansion, it is characterized in that: in InP substrate, adopt periodically In
xga
1-xas Multiple Quantum Well Coupled Superlattices structure, each superlattice period includes a quantum well layer and a barrier layer, adopts thickness to be the In of a
xga
1-xas, 0.53<x≤1 is as quantum well layer, and thickness is the In of b
yga
1-yas, 0≤y<0.53 are as barrier layer.
2. a kind of material structure for realizing the expansion of InGaAs light absorption wavelength according to claim 1, is characterized in that: the thickness a of described quantum well layer is 1-10nm.
3. a kind of material structure for realizing the expansion of InGaAs light absorption wavelength according to claim 1, is characterized in that: the thickness b of described barrier layer is 1-10nm.
4. a kind of material structure for realizing the expansion of InGaAs light absorption wavelength according to claim 1, is characterized in that: described material light absorption long wave cut-off function Wavelength tunable scope is at room temperature 1.7-3 μm.
5. a kind of material structure for realizing the expansion of InGaAs light absorption wavelength according to claim 1, it is characterized in that: between the quantum well layer and barrier layer of described material, adopt strain compensation growth mechanism: quantum well layer is compressive strain in face, barrier layer is tensile strain in face, and the strain facies complementation between quantum well layer and barrier layer is repaid; Thickness a, the component x of quantum well layer and the thickness b of barrier layer, the close of component y seemingly meet
6. a kind of material structure for realizing the expansion of InGaAs light absorption wavelength according to claim 1, is characterized in that: quantum well layer fixes the In of In component by one deck
xga
1-xas material composition or by multiple different I n component I n
xga
1-xthe potential well subgrade of As combines; Barrier layer fixes the In of In component by one deck
yga
1-yas material composition or by multiple different I n component I n
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1-xthe potential barrier subgrade of As combines; Wherein, when quantum well layer, barrier layer comprise subgrade, average composition and the close of subgrade gross thickness seemingly meet
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5181086A (en) * | 1990-05-17 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Strained superlattice semiconductor structure |
| CN103077979A (en) * | 2013-01-07 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | Wavelength expansion InGaAs detector structure on GaAs substrate |
| CN103151418A (en) * | 2011-12-07 | 2013-06-12 | 有研半导体材料股份有限公司 | Double-barrier quantum well structure semiconductor infrared photoelectric detector and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5181086A (en) * | 1990-05-17 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Strained superlattice semiconductor structure |
| CN103151418A (en) * | 2011-12-07 | 2013-06-12 | 有研半导体材料股份有限公司 | Double-barrier quantum well structure semiconductor infrared photoelectric detector and manufacturing method thereof |
| CN103077979A (en) * | 2013-01-07 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | Wavelength expansion InGaAs detector structure on GaAs substrate |
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