CN105445628A - High voltage test circuit and connection method thereof - Google Patents
High voltage test circuit and connection method thereof Download PDFInfo
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- CN105445628A CN105445628A CN201510850124.3A CN201510850124A CN105445628A CN 105445628 A CN105445628 A CN 105445628A CN 201510850124 A CN201510850124 A CN 201510850124A CN 105445628 A CN105445628 A CN 105445628A
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- reactor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/1272—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of cable, line or wire insulation, e.g. using partial discharge measurements
Abstract
The invention discloses a high voltage test circuit and a connection method thereof. The connection method comprises: performing serial connection of reactors through a test wire according to a first preset condition, and obtaining a reactor group, wherein the first preset condition is used for indicating the number of the reactors in each series circuit; making the reactor group in serial connection become in parallel connection through a test wire according to a second preset condition, and then obtaining a boost and current rising circuit, wherein the second preset condition is used for indicating the number of the reactors in the parallel circuit; and accessing the boost and current rising circuit to a test power supply. The high voltage test circuit and the connection method can solve the problem that the related art is short of a method for adjusting a test voltage and a test current in a loop to a target voltage and a target current for a high voltage holding test so that the test voltage value for the high voltage holding test cannot achieve an applied voltage value specified by a standard and the current capacity of test equipment is too great.
Description
Technical field
The present invention relates to electrical applications technical field, in particular to a kind of high-potting circuit and method of attachment.
Background technology
For ensureing Electrical Safety, and facilitate the maintenance of daily high voltage electric equipment, usually after Specific construction completes, before engineering puts into operation, will test in advance each transmission facility, regulator and transmission cable etc., with the serviceability of extreme value test each equipment room under each environment, thus ensure Electrical Safety in the future, and facilitate the maintenance of daily high voltage electric equipment.
Existing in the test of high voltage electric equipment; for guaranteeing that electric energy is normally carried; usually high pressure withstand voltage test can be carried out to transmission cable; to guarantee the normal conveying of electric energy in the future; but in correlation technique; in high pressure withstand voltage test; in the loop be made up of transmission cable; trial voltage in this loop and test current need by the voltage and current in the withstand voltage test of multiple stage reactor combined compensation high pressure; but still cannot reach target voltage and the target current of high pressure withstand voltage test, cause high pressure withstand voltage test cannot reach the extreme value requirement of regulations stipulate.
Owing to lacking in correlation technique, the trial voltage in loop and test current are adjusted to the target voltage of high pressure withstand voltage test and the method for target current for above-mentioned, cause high pressure withstand voltage test to carry out, not yet propose effective solution at present.
Summary of the invention
Embodiments provide a kind of high-potting circuit and method of attachment, owing to lacking in correlation technique, the trial voltage in loop and test current are adjusted to the target voltage of high pressure withstand voltage test and the method for target current at least to solve, cause trial voltage numerical value during high pressure withstand voltage test not reach pressurization numerical value that standard specifies and the too large technical matters of testing equipment current capacity.
According to an aspect of the embodiment of the present invention, provide a kind of method of attachment of high-potting circuit, comprising: be pre-conditioned by test lead current-limiting reactor according to first, obtain Reactor banks, wherein, the first pre-conditioned number being used to indicate reactor in every bar series circuit; Foundation second is pre-conditioned carries out parallel connection by the Reactor banks after series connection by test lead, obtains boosting up-flow circuit, wherein, and the second pre-conditioned number being used to indicate Reactor banks in parallel circuit; The up-flow circuit that will boost access experiment power supply.
Further, pre-conditioned by test lead current-limiting reactor according to first, the step obtaining Reactor banks comprises: the target voltage according to the first pre-conditioned mesohigh test arranges the number of reactor in series circuit; According to number by test lead current-limiting reactor, obtain Reactor banks.
Further, when target voltage raises, increase the number of reactor in every bar series circuit.
Further, foundation second is pre-conditioned carries out parallel connection by the Reactor banks after series connection by test lead, and the step obtaining boosting up-flow circuit comprises: the target current according to the second pre-conditioned mesohigh test arranges the number of Reactor banks in parallel circuit; According to number by test lead shunt reactor group, obtain boosting up-flow circuit.
Further, when target current raises and/or conductor length increases, increase the number of Reactor banks.
According to the another aspect of the embodiment of the present invention, additionally provide a kind of high-potting circuit, comprising: experiment power supply, Reactor banks and test lead, wherein, experiment power supply, for output test voltage and test current; Reactor banks, be electrically connected with experiment power supply by test lead, wherein, in parallel between Reactor banks, reactor in Reactor banks is in parallel, for test current in high-potting being adjusted to target current by Reactor banks in parallel, and by the reactor of connecting in Reactor banks, trial voltage is adjusted to target voltage.
Further, trial voltage is adjusted to target voltage by target voltage current-limiting reactor by high-potting circuit.
Further, test current is adjusted to target current by the Reactor banks after target current parallel connection series connection by high-potting circuit.
In embodiments of the present invention, obtain Reactor banks by foundation first is pre-conditioned by test lead current-limiting reactor, wherein, the first pre-conditioned number being used to indicate reactor in every bar series circuit, foundation second is pre-conditioned carries out parallel connection by the Reactor banks after series connection by test lead, obtains boosting up-flow circuit, wherein, and the second pre-conditioned number being used to indicate Reactor banks in parallel circuit, the up-flow circuit that will boost access experiment power supply, reach and effectively trial voltage is promoted to target voltage, and test current is promoted to the object of target current, thus achieve and can reach the trial voltage of high pressure withstand voltage test and the technique effect of test current, and then solve, owing to lacking in correlation technique, the trial voltage in loop and test current are adjusted to the target voltage of high pressure withstand voltage test and the method for target current, cause trial voltage numerical value during high pressure withstand voltage test not reach pressurization numerical value that standard specifies and the too large technical matters of testing equipment current capacity.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, and form a application's part, schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the schematic flow sheet of the method for attachment of high-potting circuit according to the embodiment of the present invention;
Fig. 2 is the design sketch of the method for attachment of high-potting circuit according to the embodiment of the present invention;
Fig. 3 is the structural representation of the high-potting circuit according to the embodiment of the present invention.
Embodiment
The present invention program is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the embodiment of a part of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
It should be noted that, term " first ", " second " etc. in instructions of the present invention and claims and above-mentioned accompanying drawing are for distinguishing similar object, and need not be used for describing specific order or precedence.Should be appreciated that the data used like this can be exchanged in the appropriate case, so as embodiments of the invention described herein can with except here diagram or describe those except order implement.In addition, term " comprises " and " having " and their any distortion, intention is to cover not exclusive comprising, such as, contain those steps or unit that the process of series of steps or unit, method, system, product or equipment is not necessarily limited to clearly list, but can comprise clearly do not list or for intrinsic other step of these processes, method, product or equipment or unit.
Embodiment one
According to the embodiment of the present invention, provide a kind of embodiment of the method for method of attachment of high-potting circuit, Fig. 1 is the schematic flow sheet of the method for attachment of high-potting circuit according to the embodiment of the present invention, and as shown in Figure 1, the method comprises the steps:
Step S102, foundation first is pre-conditioned obtains Reactor banks by test lead current-limiting reactor, wherein, the first pre-conditioned number being used to indicate reactor in every bar series circuit;
Step S104, foundation second is pre-conditioned carries out parallel connection by the Reactor banks after series connection by test lead, obtains boosting up-flow circuit, wherein, the second pre-conditioned number being used to indicate Reactor banks in parallel circuit;
Step S106, the up-flow circuit that will boost access experiment power supply.
The method of attachment of the high-potting circuit that the embodiment of the present application provides goes for high-voltage alternating withstand voltage test, especially long distance, heavy in section 500kV cable voltage test, in the embodiment of the present application, test lead can be cable, and composition high-potting circuit is 500kV two-circuit cable line, loop length can be set to 6.7km, primary Ioops is domestic cable and annex, and another loop is European electrogenesis cable and annex, and cable conductor sectional area is 2500mm
2, wherein, domestic 500kV cable line 1.7U
0within withstand voltage 1 hour, the AC voltage withstand test of monitoring is put in band office, and 500kV cable line 1.4U is produced in Europe
0within withstand voltage 1 hour, the AC voltage withstand test of monitoring is put in band office, for reaching 500kV voltage, need with multiple stage reactor lifting test voltage in correlation technique, to reach the object voltage (that is, needing the 500kV reached in the embodiment of the present application mesohigh AC voltage withstand test) of 500kV.
The method of attachment of the high-potting circuit that the embodiment of the present application provides, the magnitude of voltage that will reach according to the required cable of high-voltage alternating withstand voltage test (namely, target voltage), current-limiting reactor, Reactor banks in the withstand voltage test of further foundation high-voltage alternating after target current instruction series connection carries out parallel connection, thus reduce the Redundancy Design of reactor, promote the data precision of high pressure withstand voltage test while decreasing experimentation cost.
Concrete, the method for attachment of the high-potting circuit that the embodiment of the present application provides, reactor is pre-conditioned by test lead current-limiting reactor according to first, further, pre-conditioned the Reactor banks obtained after series connection is carried out parallel connection by second.
Preferably, the 500kV cable voltage test be applicable to for the embodiment of the present application, test lead, for cable, for meeting 500kV voltage design needs, designs two groups of reactors, often organize reactor to be connected by cable 12, wherein, often organize in reactor and can comprise two reactors, further, for the current needs in supplementary 500kV cable voltage test, the reactor parallel connection access experiment power supply 13 after two groups are connected.Fig. 2 is the design sketch of the method for attachment of high-potting circuit according to the embodiment of the present invention, specifically as shown in Figure 2, two groups of reactors, namely, first Reactor banks 10, second Reactor banks 11, wherein, first Reactor banks 10 comprises reactor 101 and reactor 102, second Reactor banks 11 comprises reactor 111 and reactor 112, the size often organizing reactor can be the same or different, in the method for attachment of the high-potting circuit provided in the embodiment of the present application, only be described for above-mentioned, be as the criterion with the method for attachment realizing the high-potting circuit that the embodiment of the present application provides, specifically do not limit.
The method of attachment of the high-potting circuit that the embodiment of the present application provides, obtains Reactor banks by foundation first is pre-conditioned by test lead current-limiting reactor, wherein, and the first pre-conditioned number being used to indicate reactor in every bar series circuit, foundation second is pre-conditioned carries out parallel connection by the Reactor banks after series connection by test lead, obtains boosting up-flow circuit, wherein, and the second pre-conditioned number being used to indicate Reactor banks in parallel circuit, the up-flow circuit that will boost access experiment power supply, reach and effectively trial voltage is promoted to target voltage, and test current is promoted to the object of target current, thus achieve and can reach the trial voltage of high pressure withstand voltage test and the technique effect of test current, and then solve, owing to lacking in correlation technique, the trial voltage in loop and test current are adjusted to the target voltage of high pressure withstand voltage test and the method for target current, cause trial voltage numerical value during high pressure withstand voltage test not reach pressurization numerical value that standard specifies and the too large technical matters of testing equipment current capacity.
Further, pre-conditioned by test lead current-limiting reactor according to first in step S102, the step obtaining Reactor banks comprises:
Step1, the target voltage according to the first pre-conditioned mesohigh test arranges the number of reactor in series circuit;
Step2, according to number by test lead current-limiting reactor, obtains Reactor banks.
Concrete, as shown in Figure 2, when high pressure withstand voltage test is the test of 500kV cable voltage, the number of reactor in series circuit is set according to target voltage, namely, the reactor arranged according to 500kV in the Reactor banks in every bar series circuit is two, and further, reactor composition Reactor banks is often organized in series connection.
Further, when target voltage raises, increase the number of reactor in every bar series circuit.
Further, in step S104, foundation second is pre-conditioned carries out parallel connection by the Reactor banks after series connection by test lead, and the step obtaining boosting up-flow circuit comprises:
Step1, the target current according to the second pre-conditioned mesohigh test arranges the number of Reactor banks in parallel circuit;
Step2, according to number by test lead shunt reactor group, obtains boosting up-flow circuit.
Concrete, as shown in Figure 2, when high pressure withstand voltage test is the test of 500kV cable voltage, the number of Reactor banks in parallel circuit is set according to target current, namely, Reactor banks required when arranging parallel connection according to the target current in the test of 500kV cable voltage, as shown in Figure 2, is respectively the first Reactor banks 10 and the second Reactor banks 11.
Further, when target current raises and/or conductor length increases, increase the number of Reactor banks.
When the cable length in the test of 500kV cable voltage increases, considering the resistance of cable self, is the size of the electric current that achieves the goal, and increases Reactor banks in parallel.
Embodiment two
According to the embodiment of the present invention, provide a kind of embodiment of high-potting circuit, Fig. 3 is the structural representation of the high-potting circuit according to the embodiment of the present invention, as shown in Figure 3, comprising: experiment power supply 32, Reactor banks 34 and test lead 36, wherein,
Experiment power supply 32, for output test voltage and test current;
Reactor banks 34, be electrically connected with experiment power supply 32 by test lead 36, wherein, in parallel between Reactor banks 34, reactor in Reactor banks 34 is in parallel, for test current in high-potting being adjusted to target current by Reactor banks 34 in parallel, and by the reactor of series connection in Reactor banks 34, trial voltage is adjusted to target voltage.
The high-potting circuit that the embodiment of the present application provides, by experiment power supply, Reactor banks and test lead, wherein, experiment power supply, for output test voltage and test current, Reactor banks, be electrically connected with experiment power supply by test lead, wherein, in parallel between Reactor banks, reactor in Reactor banks is in parallel, for test current in high-potting being adjusted to target current by Reactor banks in parallel, and by the reactor of connecting in Reactor banks, trial voltage is adjusted to target voltage, reach and effectively trial voltage is promoted to target voltage, and test current is promoted to the object of target current, thus achieve and can reach the trial voltage of high pressure withstand voltage test and the technique effect of test current, and then solve, owing to lacking in correlation technique, the trial voltage in loop and test current are adjusted to the target voltage of high pressure withstand voltage test and the method for target current, cause trial voltage numerical value during high pressure withstand voltage test not reach pressurization numerical value that standard specifies and the too large technical matters of testing equipment current capacity.
Further, trial voltage is adjusted to target voltage by target voltage current-limiting reactor by high-potting circuit.
Further, test current is adjusted to target current by the Reactor banks after target current parallel connection series connection by high-potting circuit.
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
In the above embodiment of the present invention, the description of each embodiment is all emphasized particularly on different fields, in certain embodiment, there is no the part described in detail, can see the associated description of other embodiments.
In several embodiments that the application provides, should be understood that, disclosed technology contents, the mode by other realizes.Wherein, device embodiment described above is only schematic, the such as division of described unit, can be that a kind of logic function divides, actual can have other dividing mode when realizing, such as multiple unit or assembly can in conjunction with or another system can be integrated into, or some features can be ignored, or do not perform.Another point, shown or discussed coupling each other or direct-coupling or communication connection can be by some interfaces, and the indirect coupling of unit or module or communication connection can be electrical or other form.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. a method of attachment for high-potting circuit, is characterized in that, comprising:
Foundation first is pre-conditioned obtains Reactor banks by test lead current-limiting reactor, wherein, and the described first pre-conditioned number being used to indicate reactor described in every bar series circuit;
Foundation second is pre-conditioned carries out parallel connection by the described Reactor banks after series connection by described test lead, obtains boosting up-flow circuit, wherein, and the described second pre-conditioned number being used to indicate Reactor banks described in parallel circuit;
By described boosting up-flow circuit access experiment power supply.
2. method of attachment according to claim 1, is characterized in that, described foundation first is pre-conditioned by test lead current-limiting reactor, and the step obtaining Reactor banks comprises:
Target voltage according to described first pre-conditioned mesohigh test arranges the number of reactor in described series circuit;
To be connected described reactor by described test lead according to described number, obtain described Reactor banks.
3. method of attachment according to claim 2, is characterized in that, when described target voltage raises, increases the number of reactor described in series circuit described in every bar.
4. method of attachment according to claim 1, is characterized in that, described foundation second is pre-conditioned carries out parallel connection by the described Reactor banks after series connection by described test lead, and the step obtaining boosting up-flow circuit comprises:
Target current according to described second pre-conditioned mesohigh test arranges the number of Reactor banks described in described parallel circuit;
According to described number by described test lead described Reactor banks in parallel, obtain described boosting up-flow circuit.
5. method of attachment according to claim 4, is characterized in that, when described target current raises and/or conductor length increases, increases the number of described Reactor banks.
6. a high-potting circuit, is characterized in that, comprising: experiment power supply, Reactor banks and test lead, wherein,
Described experiment power supply, for output test voltage and test current;
Described Reactor banks, be electrically connected with described experiment power supply by described test lead, wherein, in parallel between described Reactor banks, reactor in described Reactor banks is in parallel, for test current in high-potting being adjusted to target current by described Reactor banks in parallel, and by the described reactor of connecting in described Reactor banks, trial voltage is adjusted to target voltage.
7. high-potting circuit according to claim 6, is characterized in that, described trial voltage is adjusted to described target voltage by described target voltage current-limiting reactor by described high-potting circuit.
8. high-potting circuit according to claim 7, is characterized in that, described test current is adjusted to described target current by the described Reactor banks after described target current parallel connection series connection by described high-potting circuit.
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| CN201510850124.3A CN105445628A (en) | 2015-11-27 | 2015-11-27 | High voltage test circuit and connection method thereof |
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| CN201510850124.3A CN105445628A (en) | 2015-11-27 | 2015-11-27 | High voltage test circuit and connection method thereof |
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Citations (5)
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| US5514967A (en) * | 1994-08-16 | 1996-05-07 | Zelm; Richard J. | Automatic insulation test equipment for testing high voltage electrical equipment at the rated voltage level |
| CN102081135A (en) * | 2009-11-30 | 2011-06-01 | 苏州市华电电气技术有限公司 | Alternating-current voltage resistance test device |
| CN102288880A (en) * | 2011-05-12 | 2011-12-21 | 辽宁省电力有限公司沈阳供电公司 | Frequency-changing resonant withstand voltage testing device |
| CN203759189U (en) * | 2014-02-24 | 2014-08-06 | 苏州科技学院 | Ultra-large-capacity high-voltage variable frequency resonant cable voltage withstanding test device |
| CN105067965A (en) * | 2015-01-26 | 2015-11-18 | 深圳市华中行科技有限公司 | High voltage resistant tester |
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2015
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| US5514967A (en) * | 1994-08-16 | 1996-05-07 | Zelm; Richard J. | Automatic insulation test equipment for testing high voltage electrical equipment at the rated voltage level |
| CN102081135A (en) * | 2009-11-30 | 2011-06-01 | 苏州市华电电气技术有限公司 | Alternating-current voltage resistance test device |
| CN102288880A (en) * | 2011-05-12 | 2011-12-21 | 辽宁省电力有限公司沈阳供电公司 | Frequency-changing resonant withstand voltage testing device |
| CN203759189U (en) * | 2014-02-24 | 2014-08-06 | 苏州科技学院 | Ultra-large-capacity high-voltage variable frequency resonant cable voltage withstanding test device |
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Address after: 100031 Beijing Qianmen West Street, Xicheng District, No. 41 Applicant after: State Grid Beijing Electric Power Company Applicant after: State Grid Corporation of China Applicant after: Beijing Electric Power Engineering Co., Ltd. Address before: 100031 Beijing Qianmen West Street, Xicheng District, No. 41 Applicant before: State Grid Beijing Electric Power Company Applicant before: State Grid Corporation of China Applicant before: Beijing Power Engineering Company |
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Application publication date: 20160330 |