CN105439078B - A kind of MEMS and preparation method thereof, electronic installation - Google Patents
A kind of MEMS and preparation method thereof, electronic installation Download PDFInfo
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- CN105439078B CN105439078B CN201410389156.3A CN201410389156A CN105439078B CN 105439078 B CN105439078 B CN 105439078B CN 201410389156 A CN201410389156 A CN 201410389156A CN 105439078 B CN105439078 B CN 105439078B
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Abstract
The present invention relates to a kind of MEMS and preparation method thereof, electronic installation, methods described includes step S1：Substrate is provided, on the substrate the concussion membrane layers formed with the first sacrificial material layer and in first sacrificial material layer, wherein, formed with some openings in the concussion membrane layers, to expose first sacrificial material layer；Step S2：Deposition hafnium layer simultaneously planarizes, and to fill the opening, forms concussion film.The advantage of the invention is that：(1) Membrane impact resistance is increased.(2) it completely avoid locating part (Stoper) structure and damage buffered to caused by Membrane.(3) simplification of flowsheet, cost is reduced, improves production capacity.(4) the premature failure phenomenon of MEMS is improved.(5) HK materials are introduced, improve/maintain the sensitivity (sensitivity) of MEMS.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to which a kind of MEMS and preparation method thereof, electronics fill
Put.
Background technology
With the continuous development of semiconductor technology, in the in the market of sensor (motion sensor) class product, intelligent hand
Machine, integrated CMOS and MEMS (MEMS) device have become most main flow, state-of-the-art technology, and with technology more
Newly, the developing direction of this kind of transmission sensors product is the smaller size of scale, the electric property of high quality and lower loss.
Wherein, MEMS sensor is widely used in automotive electronics：As TPMS, engine oil pressure sensor, automobile are stopped
Car system air pressure sensor, air intake manifold of automotive engine pressure sensor (TMAP), common rail for diesel engine pressure sensor；
Consumer electronics：Such as tire gauge, sphygmomanometer, cupboard scale, health scale, washing machine, dish-washing machine, refrigerator, micro-wave oven, baking box, dust suction
Device pressure sensor, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level pressure
Sensor；Industrial electronic：Such as digital pressure gauge, digital stream scale, industrial batching weighing.
In MEMS fields, the operation principle of the MEMS is to produce electric capacity by the motion of concussion film (Membrane)
Change, using capacitance change carry out computing and work, the MEMS in use because motion amplitude is excessive, lead to
It can often cause to shake film (Membrane) crack damage, limiting layer (Stop is devised in MEMS in order to solve the problem
Structure concussion film (Membrane)) is avoided to cause to fail because motion amplitude is excessive.
The current limiting layer 10 (Stop structure) as shown in figure 1h, the limiting layer (Stop structure)
Although it can prevent that shake film (Membrane) causes rupture because shock range is too big, earthquake film (Membrane)
Under being impacted with limiting layer (Stop structure), some faint damages can be also formed, cause MEMS to fail ahead of time.
Therefore need to be improved further described MEMS and preparation method thereof, to eliminate above mentioned problem.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical scheme claimed
Key feature and essential features, the protection domain for attempting to determine technical scheme claimed is not meant that more.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation method of MEMS, including：
Step S1：Substrate is provided, sacrifices material formed with the first sacrificial material layer and positioned at described first on the substrate
Concussion membrane layers on the bed of material, wherein, it is sacrificial to expose described first formed with some openings in the concussion membrane layers
Domestic animal material layer；
Step S2：Deposition hafnium layer simultaneously planarizes, and to fill the opening, forms concussion film.
Alternatively, in the step S1, the opening is in linear.
Alternatively, in the step S1, some openings are in laterally and/or longitudinally arranging, to form aperture array.
Alternatively, in the step S1, the concussion membrane layers are in polygonized structure.
Alternatively, in the step S1, the concussion hexagonal structure of membrane layers, in the hexagonal structure
Formed with concussion film anchor portion on each angle.
Alternatively, after the step S2, methods described also includes：
Step S3：The second sacrificial material layer is deposited, to cover the concussion film；
Step S4：In second sacrificial material layer, the top of the concussion film forms and spaced some determines pole
Plate；
Step S5：Limiting layer is deposited, to cover the fixed plate and second sacrificial material layer；
Step S6：The back side of the substrate is patterned, to expose first sacrificial material layer；
Step S7：Remove below the concussion film middle part first sacrificial material layer of the top of sum and described the
Two sacrificial material layers, to form cavity.
Alternatively, double-sided etching process is selected in the step S7, to remove the top of sum below the concussion film simultaneously
First sacrificial material layer and second sacrificial material layer.
Alternatively, the step S1 includes：
Step S11：Substrate is provided, and deposits first sacrificial material layer on the substrate；
Step S12：Concussion membrane layers are formed in first sacrificial material layer；
Step S13：The mask layer of patterning is formed in the concussion membrane layers；
Step S14：Using the mask layer as membrane layers are shaken described in mask etch, to form the opening.
Alternatively, the step S4 includes：
Step S41：Conductive material layer is formed in second sacrificial material layer；
Step S42：The mask layer of patterning is formed on the conductive material layer；
Step S43：Using the mask layer as conductive material layer described in mask etch, spaced described pole is determined to be formed
Plate.
Present invention also offers a kind of MEMS, including：
Film is shaken, including shakes membrane layers and the hafnium layer being embedded in the concussion membrane layers；
Fixed plate, including some spaced parts, positioned at the top of the concussion film；
Cavity, between the concussion film and the fixed plate.
Alternatively, the hafnium layer is in linear structure.
Alternatively, the hafnium layer of some linear structures is in laterally and/or longitudinally arranging, to form linear structure
Array.
Alternatively, the hafnium layer, which runs through, is embedded in the concussion membrane layers.
Alternatively, the concussion membrane layers are in polygonized structure.
Alternatively, the concussion hexagonal structure of membrane layers, is formed on each angle of the hexagonal structure
There is concussion film anchor portion.
Alternatively, the MEMS still further comprises the sensing opening below the concussion film, for realizing
The sensing of pressure.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
The present invention is in order to solve problems of the prior art, there is provided a kind of MEMS and preparation method thereof,
Linear hafnium layer is introduced in earthquake film in prepared by the MEMS, the hafnium layer can increase the concussion
The impact resistance of film, and the sensitivity of the concussion film is not interfered with, by shaking film (Membrane) shape and structure
Change, prevent from shaking fracture phenomena caused by film (Membrane) is impacted
The advantage of the invention is that：
(1) Membrane impact resistance is increased.
(2) it completely avoid locating part (Stoper) structure and damage buffered to caused by Membrane.
(3) simplification of flowsheet, cost is reduced, improves production capacity.
(4) the premature failure phenomenon of MEMS is improved.
(5) HK materials are introduced, improve/maintain the sensitivity (sensitivity) of MEMS.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-1h are the preparation process schematic diagram of MEMS in the prior art；
Fig. 2 a-2i are the preparation process schematic diagram of MEMS described in the embodiment of the invention；
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
Person may have element or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or when " being directly coupled to " other elements or layer, then element or layer between two parties is not present.It should be understood that although it can make
Various elements, part, area, floor and/or part are described with term first, second, third, etc., these elements, part, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish an element, part, area, floor or part with it is another
One element, part, area, floor or part.Therefore, do not depart from present invention teach that under, the first element discussed below, portion
Part, area, floor or part are represented by the second element, part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and by using so as to describe an element shown in figure or feature with
The relation of other elements or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term is intended to also include making
With the different orientation with the device in operation.For example, if the device upset in accompanying drawing, then, is described as " under other elements
Face " or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, this
Invention can also have other embodiment.
At present, the preparation method of the MEMS provides substrate 101, in the substrate first as shown in Fig. 1 a-1h
Formed with the first sacrificial material layer 102 and concussion film (Membrane) material layer on 101, as shown in Figure 1a, institute is then patterned
Concussion film (Membrane) material layer is stated to form concussion film (Membrane) 103, to reduce the concussion film (Membrane)
Critical size.
Then the first sacrificial material layer 102 is deposited again, and to cover the concussion film 103, and it is sacrificial to pattern described first
Domestic animal material layer 102, to form some first openings 10 in the top of the concussion film 103, expose the concussion film 103, such as scheme
Shown in 1b.
Further, the second sacrificial material layer 104 is then deposited, to fill first opening 10, covering described first is sacrificial
Domestic animal material layer 102, while the top of the first opening 10 forms groove 11 described in second sacrificial material layer, such as Fig. 1 c institutes
Show.
Then fixed plate 105 is formed in second sacrificial material layer 104 between the groove 11, such as Fig. 1 d institutes
Show, wherein the fixed plate 105 and the concussion film 103 form capacitor arrangement in subsequent step；Then described second
Limiting layer 106 is formed in sacrificial material layer 104, to fill the groove 11 while cover second sacrificial material layer 104, such as
Shown in Fig. 1 e.
The back of the substrate 101 is patterned, to form the second opening, exposes first sacrificial material layer 102, such as schemes
Shown in 1f, then remove the first sacrificial material layer 102 and second above and below concussion film 103 middle part and sacrifice
Material layer 104, to form cavity between the concussion film 103 and the fixed plate 105, and expose on the concussion film 103
The limiting layer 106 of side, as shown in Figure 1 g.
Bend deformation after the concussion film 103 experiences pressure, wherein the limiting layer 106 can avoid shaking
103 excessive deformation of film, the concussion film 103 is played a protective role, can prevent from shaking film (Membrane) due to shaking width
Degree is too big and causes rupture, but under earthquake film (Membrane) impacts with limiting layer (Stop structure), also can shape
Into some faint damages, MEMS is caused to fail ahead of time.
Embodiment 1
In order to solve problems of the prior art, the invention provides a kind of preparation method of MEMS, below
Methods described is described further with reference to accompanying drawing 2a-2i.
First, step 201 is performed, there is provided substrate 201, and the first sacrificial material layer 202 is formed in the substrate 201.
Specifically, as shown in Figure 2 a, wherein the substrate 201 comprises at least Semiconductor substrate, the Semiconductor substrate can
To be at least one of following material being previously mentioned：Silicon, silicon-on-insulator (SOI), silicon (SSOI), insulation are laminated on insulator
SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. are laminated on body.Semiconductor
Active area can be defined on substrate.
The first sacrificial material layer 202 is deposited on the substrate, wherein, first sacrificial material layer 202 can be selected
The concussion film formed with the Semiconductor substrate and in first sacrificial material layer 202 has larger etching selectivity
Material, such as oxide skin(coating) can be selected, such as SiO2With the material such as carbon doped silicon oxide (SiOC), but above-mentioned show is not limited to
Example.
Perform step 202, concussion formed in first sacrificial material layer 202 and membrane layers 203 and is patterned, with
Some openings 20 are formed in the concussion membrane layers 203.
Specifically, as shown in Figure 2 a, the deposition concussion membrane layers in first sacrificial material layer 202, to cover
The first sacrificial material layer 202 is stated, wherein, the concussion membrane layers can select the materials such as polysilicon, SiGe, it is not limited to
It is a certain.In this embodiment, the concussion membrane layers select polysilicon.
In this application in order to improve the shock resistance of the concussion film, the shape of the concussion film has been done further
Improve, the concussion film of square structure in the prior art is changed into polygonized structure (at least pentagon or more), such as Fig. 2 i
Shown hexagon.
Further, when the concussion membrane layers 203 are in polygonized structure, on each angle of the polygonized structure
Formed with concussion film anchor portion.
The concussion membrane layers 203 are patterned, following methods can be specifically selected to form some openings 20：Institute
State and mask layer is formed in concussion membrane layers, the pattern formed with opening 20 in the mask layer, using the mask layer as mask
The concussion membrane layers are etched, the pattern of the opening 20 is transferred in the concussion membrane layers, opened described in formation
Mouth 20, finally removes the mask layer.
In this step, the opening to be shaped as be in linear opening, the linear opening is strip, and rule
Arrangement, such as some openings 20 are in laterally and/or longitudinally to arrange, to form aperture array, as shown in fig. 2i.
Step 203 is performed, hafnium layer is deposited and planarizes, to fill the opening 20, forms concussion film.
Specifically, as shown in Figure 2 b, in this step, deposited high-k material layer 204 is to fill the opening 20 and cover institute
State concussion membrane layers 203.
Wherein, the high-k material layer 204 can select such as TiO2、Al2O3、ZrO2、HfO2、Ta2O5、La2O3High k electricity
One kind in medium.Or the high-k material layer 204 can also be in Hf02It is middle to introduce the elements such as Si, Al, N, La, Ta and optimize
The ratio of each element is come obtained hafnium etc..
Alternatively, the forming method of the high-k material layer 204 can be physical gas-phase deposition or ald work
Skill.
Wherein, the thickness of the high-k material layer 204 is not limited to a certain number range, can be filled up completely with described open
Mouth 20.
Then planarisation step is performed, planarizes the high-k material layer 204 in this step to the concussion membrane layers
203, stopped with exposing during the concussion membrane layers 203, as shown in Figure 2 c, field of semiconductor manufacture can be used in the step
Middle conventional flattening method realizes the planarization on surface.The non-limiting examples of the flattening method include machinery planarization
Method and chemically mechanical polishing flattening method.
Step 204 is performed, the second sacrificial material layer 205 is deposited, to cover the concussion film.
Specifically, as shown in Figure 2 d, step forms groove or breach in this step, also will not in subsequent steps
Locating part is formed, to encounter the locating part when preventing that the concussion film Oscillation Amplitude is excessive, causes to damage.
Second sacrificial material layer 205 is deposited from the method for conformal deposited in this step, wherein, described second is sacrificial
Domestic animal material layer 205 can select the material for having larger etching selectivity with the Semiconductor substrate and the concussion film, example
Such as it is chosen as oxide skin(coating), such as SiO2With the material such as carbon doped silicon oxide (SiOC), it is not limited to a certain.
Alternatively, first sacrificial material layer 202 and second sacrificial material layer 205 select identical material.
Perform step 205, if in second sacrificial material layer 204 it is described concussion film top formed it is spaced
Dry fixed plate 206.
Specifically, as shown in Figure 2 e, some fixed plates 206 are formed in second sacrificial material layer 205, for being formed
The Top electrode of capacitor, wherein, the fixed plate 206 can select conductive material commonly used in the art, it is not limited to a certain
Kind, polysilicon can be selected in this embodiment as the fixed plate 206.
The method for forming the fixed plate 206 includes but is not limited to following step：In second sacrificial material layer 205
Upper formation conductive material layer；The mask layer of patterning is formed on the conductive material layer；Using the mask layer as mask etch
The conductive material layer, to form spaced fixed plate 206 above the concussion film, finally remove the mask layer.
Step 206 is performed, limiting layer 207 is deposited, to cover the fixed plate 206 and second sacrificial material layer 204.
As shown in figure 2f, limiting layer 207 is deposited on the fixed plate 206 and second sacrificial material layer 205, wherein
The limiting layer 207 can select nitride layer, such as SiN, but be not limited to the material.
Step 207 is performed, the back side of the substrate 201 is patterned, to expose first sacrificial material layer 202.
Specifically, as shown in Figure 2 g, the substrate 201 is inverted in this step, to expose the back side of the substrate, then
The back side of the substrate is etched, is open with forming the larger sensing of critical size, exposes first sacrificial material layer 202.
Wherein, the sensing opening is used to ambient pressure being transferred to the concussion film in subsequent steps, makes described
Concussion film deforms upon, to change concussion the distance between the film and fixed plate, so as to change electric capacity between the two, to pressure
Quantitative measurement is made in the change of power.
Step 208 is performed, removes the He of the first sacrificial material layer 202 above and below the concussion film middle part
Second sacrificial material layer 205, to form cavity.
Specifically, as shown in fig. 2h, in this step from double-sided etching process, to remove above the concussion film simultaneously
First sacrificial material layer 202 and second sacrificial material layer 20 with lower section.
Wherein, can when first sacrificial material layer 202 and second sacrificial material layer 205 select oxide skin(coating)
To remove first sacrificial material layer 202 and second sacrificial material layer 205 from TMAH wet etching.
The mass fraction of the TMAH solution is 0.1%-10%, and the wet etching temperature is 25-90 DEG C, the wet method
Etching period is 10s-1000s, but be not limited to that the example, can also select other method commonly used in the art.
After first sacrificial material layer 202 and second sacrificial material layer 205 is removed, in the fixed plate
Cavity is formed between 206 and the concussion film, forms the dielectric medium of capacitor arrangement.
So far, the introduction of the correlation step of the MEMS preparation of the embodiment of the present invention is completed.After the above step,
Other correlation steps can also be included, here is omitted.Also, in addition to the foregoing steps, the preparation method of the present embodiment
Other steps can also be included among above-mentioned each step or between different steps, these steps can pass through existing skill
Various techniques in art realize that here is omitted.
Simulation discovery is carried out by the MEMS that the method for the invention is prepared, is receiving identical pressure
Under, concussion film (Membrane) vertical tremor amplitude is effectively reduced, such as in the case where the power for receiving 20uN acts on, vibrates width
Degree 6u from the prior art is effectively protected for the 2.4u of the present invention and broken caused by Membrane vibration amplitudes are excessive
Split.
Further, the device sensitivity that methods described is prepared into further improves, and is found through experiments that, in 20uN masterpiece
Under, adding, capacitance change caused by the concussion membrane structure of high K (High-K) material is bigger.
The present invention is in order to solve problems of the prior art, there is provided a kind of MEMS and preparation method thereof,
Linear hafnium layer is introduced in earthquake film in prepared by the MEMS, the hafnium layer can increase the concussion
The impact resistance of film, and the sensitivity of the concussion film is not interfered with, by shaking film (Membrane) shape and structure
Change, prevent from shaking fracture phenomena caused by film (Membrane) is impacted
The advantage of the invention is that：
(1) Membrane impact resistance is increased.
(2) it completely avoid locating part (Stoper) structure and damage buffered to caused by Membrane.
(3) simplification of flowsheet, cost is reduced, improves production capacity.
(4) the premature failure phenomenon of MEMS is improved.
(5) HK materials are introduced, improve/maintain the sensitivity (sensitivity) of MEMS.
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention, is specifically included following
Step：
Step S1：Substrate is provided, sacrifices material formed with the first sacrificial material layer and positioned at described first on the substrate
Concussion membrane layers on the bed of material, wherein, it is sacrificial to expose described first formed with some openings in the concussion membrane layers
Domestic animal material layer；
Step S2：Deposition hafnium layer simultaneously planarizes, and to fill the opening, forms concussion film.
Embodiment 2
Present invention also offers a kind of MEMS, and as shown in fig. 2h, the MEMS includes：
Film is shaken, including shakes membrane layers 203 and the hafnium layer 204 being embedded in the concussion membrane layers；
Fixed plate 206, including some spaced parts, positioned at the top of the concussion film；
Cavity, between the concussion film and the fixed plate 206.
Wherein, the hafnium layer is in linear structure.
The hafnium layer of some linear structures is in laterally and/or longitudinally arranging, to form linear structure array.
The hafnium layer, which runs through, to be embedded in the concussion membrane layers.
The concussion membrane layers 203 are in polygonized structure, such as hexagonal structure, in the every of the hexagonal structure
All formed with concussion film anchor portion on individual angle.
Further, the MEMS still further comprises the sensing opening below the concussion film, for realizing
The sensing of pressure.
Linear hafnium layer is introduced in MEMS earthquake film of the present invention, the hafnium layer can increase
The impact resistance of the concussion film, and the sensitivity of the concussion film is not interfered with, by shaking film (Membrane) shape
The change of shape and structure, prevent that shaking film (Membrane) is impacted caused fracture phenomena, is simplified technological process, is reduced
Cost, improve production capacity.
Embodiment 3
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment 2.Wherein, semiconductor devices
For the MEMS described in embodiment 2, or the MEMS that preparation method according to embodiment 1 obtains.
The electronic installation of the present embodiment, can be mobile phone, tablet personal computer, notebook computer, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment, or
Any intermediate products for including the MEMS.The electronic installation of the embodiment of the present invention, due to having used above-mentioned MEMS devices
Part, thus there is better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member can also make more kinds of it is understood that the invention is not limited in above-described embodiment according to the teachings of the present invention
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (17)
1. a kind of preparation method of MEMS, including：
Step S1：Substrate is provided, on the substrate formed with the first sacrificial material layer and positioned at first sacrificial material layer
On concussion membrane layers, wherein, formed with some openings in the concussion membrane layers, sacrifice material to expose described first
The bed of material；
Step S2：Deposition hafnium layer simultaneously planarizes, and to fill the opening, forms concussion film, the concussion film includes inlaying
Hafnium layer in the concussion membrane layers.
2. according to the method for claim 1, it is characterised in that in the step S1, the opening is in linear.
3. according to the method for claim 1, it is characterised in that in the step S1, it is described it is some opening in laterally and/
Or longitudinal arrangement, to form aperture array.
4. according to the method for claim 1, it is characterised in that in the step S1, the concussion membrane layers are in more
Side shape structure.
5. according to the method for claim 1, it is characterised in that in the step S1, the concussion membrane layers are in six
Side shape structure, formed with concussion film anchor portion on each angle of the hexagonal structure.
6. according to the method for claim 1, it is characterised in that after the step S2, methods described also includes：
Step S3：The second sacrificial material layer is deposited, to cover the concussion film；
Step S4：In second sacrificial material layer, it is described concussion film top form spaced some fixed plates；
Step S5：Limiting layer is deposited, to cover the fixed plate and second sacrificial material layer；
Step S6：The back side of the substrate is patterned, to expose first sacrificial material layer；
Step S7：Remove below the concussion film middle part first sacrificial material layer of the top of sum and described second sacrificial
Domestic animal material layer, to form cavity.
7. according to the method for claim 6, it is characterised in that double-sided etching process is selected in the step S7, with simultaneously
Remove first sacrificial material layer of the top of sum and second sacrificial material layer below the concussion film.
8. according to the method for claim 1, it is characterised in that the step S1 includes：
Step S11：Substrate is provided, and deposits first sacrificial material layer on the substrate；
Step S12：Concussion membrane layers are formed in first sacrificial material layer；
Step S13：The mask layer of patterning is formed in the concussion membrane layers；
Step S14：Using the mask layer as membrane layers are shaken described in mask etch, to form the opening.
9. according to the method for claim 6, it is characterised in that the step S4 includes：
Step S41：Conductive material layer is formed in second sacrificial material layer；
Step S42：The mask layer of patterning is formed on the conductive material layer；
Step S43：Using the mask layer as conductive material layer described in mask etch, to form the spaced fixed plate.
10. a kind of MEMS, including：
Film is shaken, including shakes membrane layers and the hafnium layer being embedded in the concussion membrane layers；
Fixed plate, including some spaced parts, positioned at the top of the concussion film；
Cavity, between the concussion film and the fixed plate.
11. MEMS according to claim 10, it is characterised in that the hafnium layer is in linear structure.
12. MEMS according to claim 11, it is characterised in that the hafnium layer of some linear structures is in
Laterally and/or longitudinally arrange, to form linear structure array.
13. MEMS according to claim 10, it is characterised in that the hafnium layer, which runs through, is embedded in the shake
Swing in membrane layers.
14. MEMS according to claim 10, it is characterised in that the concussion membrane layers are in polygonized structure.
15. MEMS according to claim 10, it is characterised in that the concussion hexagonal structure of membrane layers,
Formed with concussion film anchor portion on each angle of the hexagonal structure.
16. MEMS according to claim 10, it is characterised in that the MEMS is still further comprised positioned at institute
The sensing opening below concussion film is stated, for realizing the sensing of pressure.
17. a kind of electronic installation, including the MEMS described in one of claim 10-16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410389156.3A CN105439078B (en) | 2014-08-08 | 2014-08-08 | A kind of MEMS and preparation method thereof, electronic installation |
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| CN201410389156.3A CN105439078B (en) | 2014-08-08 | 2014-08-08 | A kind of MEMS and preparation method thereof, electronic installation |
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| Publication Number | Publication Date |
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| CN105439078A CN105439078A (en) | 2016-03-30 |
| CN105439078B true CN105439078B (en) | 2017-11-10 |
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| CN201410389156.3A Active CN105439078B (en) | 2014-08-08 | 2014-08-08 | A kind of MEMS and preparation method thereof, electronic installation |
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| CN102143906A (en) * | 2008-09-10 | 2011-08-03 | 松下电器产业株式会社 | MEMS device and method for manufacturing the same |
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