CN105141288A - RS trigger based on GaAs-based low leakage current double cantilever beam switch NOR gate - Google Patents
RS trigger based on GaAs-based low leakage current double cantilever beam switch NOR gate Download PDFInfo
- Publication number
- CN105141288A CN105141288A CN201510379200.7A CN201510379200A CN105141288A CN 105141288 A CN105141288 A CN 105141288A CN 201510379200 A CN201510379200 A CN 201510379200A CN 105141288 A CN105141288 A CN 105141288A
- Authority
- CN
- China
- Prior art keywords
- cantilever beam
- gaas
- layer
- leakage current
- hemt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to an RS trigger based on a GaAs-based low leakage current double cantilever beam switch NOR gate, which is composed of a DC bias source, a pull-up resistor, a GaAs-based low leakage current double cantilever beam switch HEMT (high electron mobility transistor), and is characterized in that two cantilever beams symmetrically designed above a grid electrode of the HEMT act as input ends of signals, each cantilever beam is provided with a pull-down electrode below, and each pull-down electrode is covered with an insulating silicon nitride dielectric layer. When the two input ends of the HEMT are low-level, both of the cantilever beams are located at a suspension state, a channel of the HEMT is blocked by a depletion layer, and output of a drain electrode is high-level; and when at least one input end is high-level, the cantilever beam corresponding to the high level is pulled down, and the channel of the HEMT is located at a conduction state, and the output of the drain electrode is low-level, thereby realizing a NOR gate logic function. Finally, the RS trigger is formed by two NOR circuits realized on the basis of the GaAs-based low leakage current double cantilever beam switch HEMT.
Description
Technical field
The present invention proposes the rest-set flip-flop based on GaAs (GaAs) base low-leakage current double cantilever beam switch HEMT (High Electron Mobility Transistor) NOR gate, belong to the technical field of MEMS (microelectromechanical systems).
Background technology
Trigger is a kind of elementary cell in digital circuit, and wherein rest-set flip-flop is the element forming other various function trigger.Flip-flop element common is at present all adopt silica-based COMS manufacture technics, is applied in various sequence circuit.But along with more coming also high to the speed of integrated circuit and the requirement of power consumption, GaAs based hemts demonstrates certain superiority as circuit devcie.Compare with silicon materials, GaAs material possesses that carrier mobility is high, substrate is semi-insulating and the feature such as forbidden band is wider, therefore has the advantages such as frequency is high, speed is fast, capability of resistance to radiation is strong with the device that it is made.GaAs based hemts take two-dimensional electron gas as conductive channel, and it is higher that electron mobility compares common GaAs device, is applicable to low power consumption digital integrated circuit fields.In recent years, along with the fast development of MEMS technology, there are more deep research and understanding to girder construction, made the rest-set flip-flop that the present invention is based on GaAs base low-leakage current double cantilever beam switch HEMT NOR gate become possibility.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch HEMT NOR gate, two cantilever beams are above HEMT gate pole, be equivalent to switch, signal input, realize NOR gate function by assembly structure HEMT, be finally combined into rest-set flip-flop by two NOR gate, circuit structure is simplified, the number of transistors used reduces, and also reduces circuit power consumption simultaneously.
Technical scheme: the rest-set flip-flop based on GaAs based low-leakage current double cantilever beam switch NOR gate of the present invention is substrate with half-insulating GaAs substrate, and half-insulating GaAs substrate is provided with intrinsic GaAs layer, intrinsic AlGaAs layer, N
+alGaAs layer, source region, drain region, gate metal layer and cantilever beam; Cantilever material is Au, and its one end is fixed in anchor district, and anchor district is connected with input lead, signal input; A gate metal layer and pull-down electrode is respectively had in the below of cantilever beam, pull-down electrode ground connection, the silicon nitride medium layer covering one deck insulation above of pull-down electrode, source region, drain region lay respectively at the both sides of gate metal layer, described drain electrode is connected with pull-up resistor, source ground, not with two other input lead that is connected of draining respectively as the R port of rest-set flip-flop and S port, realize NOR gate logic function; The actuation voltage of cantilever beam is set to the threshold voltage of HEMT; The two-dimensional electron gas passage of the heterojunction formation of intrinsic GaAs layer and intrinsic AlGaAs interlayer, cantilever beam is blocked by the depletion region of Schottky contacts when being in suspended state, when applying bias voltage and making cantilever beam drop-down, the depletion region of Schottky contacts narrows, and two-dimensional electron gas passage is in conducting state.
The input lead of two cantilever beams all input low level time, cantilever beam is in suspended state, and because the depleted layer of Two-dimensional electron gas channel blocks, drain electrode exports as high level; On the input lead of at least one cantilever beam during input high level, the cantilever beam of input high level is drop-down, and the Two-dimensional electron gas channel of HMET is in conducting state, and drain electrode exports as low level, owing to there is no grid leakage current, the power consumption in circuit is effectively reduced.
Beneficial effect:
The present invention has the following advantages relative to existing rest-set flip-flop:
1. the present invention adopts HEMT, has the advantage that cut-off frequency is high, operating rate is fast, short-channel effect is little and noiseproof feature is good;
2. the present invention realizes NOR gate by double cantilever beam switch HEMT, and structure is simple, decreases the quantity of transistor, reduces cost;
3. the present invention is owing to adopting cantilever beam structure, rest-set flip-flop leakage current when cantilever beam is in suspended state is reduced, thus significantly reduces power consumption;
4. the present invention is by adopting cantilever beam structure, and the turn-on and turn-off difference of HMET is obvious, effectively reduces the logic error of rest-set flip-flop.
Accompanying drawing explanation
Fig. 1 is the rest-set flip-flop vertical view that the present invention is based on GaAs base low-leakage current double cantilever beam switch HEMT NOR gate,
Fig. 2 be GaAs base low-leakage current double cantilever beam switch HEMT of the present invention P-P ' to profile,
Fig. 3 be GaAs base low-leakage current double cantilever beam switch HEMT of the present invention A-A ' to profile,
Fig. 4 is the raceway groove schematic diagram of GaAs base low-leakage current double cantilever beam switch HEMT when cantilever beam is drop-down,
Figure comprises: half-insulating GaAs substrate 1, intrinsic GaAs layer 2, intrinsic AlGaAs layer 3, N
+alGaAs layer 4, gate metal layer 5, pull-down electrode 6, silicon nitride medium layer 7, cantilever beam anchor district 8, input lead 9, pull-down electrode lead-in wire 10, press welding block 11, cantilever beam 12, source electrode 13, drain electrode 14, active area fairlead 15, active area lead-in wire 16, pull-up resistor 17.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.
See Fig. 1-4, the present invention proposes a kind of rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch HEMT NOR gate.Trigger mainly comprises: direct current biasing source, pull-up resistor 17, GaAs base low-leakage current double cantilever beam switch HEMT.
GaAs base low-leakage current double cantilever beam switch HEMT, for realizing NOR gate logic function.Select semi-insulated GaAs substrate 1, on substrate 1 containing intrinsic GaAs layer 2, intrinsic AlGaAs layer 3, N
+alGaAs layer 4, source electrode 13, drain electrode 14, gate metal layer 5 and two cantilever beams 12.Cantilever beam 12 is respectively across above Liang Gemao district 8, and effect is equivalent to switch, and anchor district is connected 9 connected with input lead, respectively there is a pull-down electrode 6 below of cantilever beam 12, and pull-down electrode 6 ground connection pull-down electrode 6 covers one deck silicon nitride medium layer 7.Heterojunction between intrinsic GaAs layer 2 and intrinsic AlGaAs layer 3 forms two-dimensional electron gas passage, and HEMT is enhancement mode, due to gate metal layer 5 and N when cantilever beam 12 is in suspended state
+alGaAs layer 4 forms Schottky contacts, and its depletion region can block two-dimensional electron gas passage; The actuation voltage arranging cantilever beam 12 equals the threshold voltage of HEMT, and when cantilever beam 12 is in pull-down state, corresponding Schottky contacts depletion region narrows, and two-dimensional electron gas is in conducting state.
The drain electrode 14 of GaAs base low-leakage current double cantilever beam switch HEMT is connected with pull-up resistor 17, and source electrode 13 ground connection, constitutes OR-NOT circuit.When two cantilever beams 12 input lead all input low level time, cantilever beam 12 is in suspended state, and because the depleted layer of Two-dimensional electron gas channel blocks, drain electrode 14 exports as high level.On the input lead 9 of at least one cantilever beam 12 during input high level, the cantilever beam 12 of input high level is drop-down, and the Two-dimensional electron gas channel of HMET is in conducting state, and drain electrode 14 exports as low level.The corresponding truth table of NAND gate circuit realized based on GaAs base low-leakage current double cantilever beam switch HEMT is as follows:
Rest-set flip-flop is combined by two OR-NOT circuit, wherein the drain electrode 14 of each GaAs base low-leakage current double cantilever beam switch HEMT is connected on the input lead 9 of another GaAs base low-leakage current double cantilever beam switch HEMT, and two other input lead 9 that HEMT is not connected with drain electrode 14 is respectively as the R port of rest-set flip-flop and S port.The left side be the S port of rest-set flip-flop, the right be the R port of rest-set flip-flop, the drain electrode 14 on the corresponding left side is rest-set flip-flop output port Q, and the drain electrode 14 on the right is that rest-set flip-flop output port Q is non-.When R end is input as high level, when S end is input as low level, Q exports as high level, and the non-output of Q is low level, and trigger puts 1; When R end be input as low level, S end be input as high level time, Q exports as low level, and the non-output of Q is high level, trigger reset; When RS end is all input as low level, trigger hold mode is constant; When RS end is all effective, flip-flop states is uncertain.
When being in suspended state when being input as low level of cantilever beam, owing to there is no grid leakage current, the power consumption in circuit is effectively reduced.
GaAs base low-leakage current double cantilever beam switch HEMT preparation method of the present invention is as follows:
1) half-insulating GaAs substrate 1 is prepared;
2) molecular beam epitaxy grows the intrinsic GaAs layer 2 that a layer thickness is 60nm;
3) molecular beam epitaxy grows the intrinsic AlGaAs layer 3 that a layer thickness is 20nm;
4) growing a layer thickness is the N of 20nm
+type AlGaAs layer 4, doping content is 1 × 10
18cm
-3, control thickness and doping content, make HEMT manage as enhancement mode;
5) growing a layer thickness is the N of 50nm
+type GaAs layer, doping content is 3.5 × 10
18cm
-3;
6) mesa etch isolation active area;
7) grown silicon nitride;
8) photoetching silicon nitride layer, carves source and drain areas, carries out phosphorus (P) ion implantation, and doping content is 3.5 × 10
18cm-3, forms source region 13 and drain region 14;
9) apply photoresist, the photoresist of electrode contact locations is removed in photoetching;
10) vacuum evaporation gold germanium nickel/gold;
11) peel off, alloying forms ohmic contact;
12) apply photoresist, the photoresist of position, HEMT gate pole 5 is removed in photoetching;
13) grow one deck Ti/Pt/Au, thickness is 0.5 μm;
14) remove the metal on photoresist and photoresist, form the gate metal layer 5 of Schottky contacts;
15) photoresist is applied, the photoresist that pull-down electrode 6 is removed in photoetching, pull-down electrode goes between 10 and position, cantilever beam anchor district 8;
16) evaporate ground floor gold, thickness is 0.3 μm;
17) remove the gold on photoresist and photoresist, form pull-down electrode 6 and pull-down electrode lead-in wire 10, and the ground floor gold in cantilever beam anchor district 8;
18) grow one deck silicon nitride medium layer 7, thickness is 0.2 μm;
19) apply photoresist, retain the photoresist on pulling electrode 6;
20) utilize reactive ion etching, form the silicon nitride medium layer 7 in pull-down electrode 6;
21) deposit photoetching polyimide sacrificial layer: coating polyimide sacrifice layer, require to fill up pit, the thickness of polyimide sacrificial layer determines the distance between cantilever beam 12 and gate metal layer 5; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam 12;
22) apply photoresist, the photoresist of cantilever beam 12, input lead 9, cantilever beam anchor district 8, press welding block 11 position is removed in photoetching;
23) evaporate the Seed Layer of the Ti/Au/Ti of 500/1500/300A °, after removing the Ti layer at top, evaporate the layer gold that a layer thickness is 2 μm again;
24) remove the gold on photoresist and photoresist, form cantilever beam 12, input lead 9, cantilever beam anchor district 8, press welding block 11;
25) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under cantilever beam 12, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Whether distinguish is that the standard of this structure is as follows:
Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch HEMT NOR gate of the present invention, above HEMT gate pole, symmetric design has two cantilever beams, the size of its actuation voltage is set to the threshold voltage of HEMT, cantilever beam is across in anchor district, anchor district is connected with input lead, signal input.Below cantilever beam, respectively there is a pull-down electrode, pull-down electrode is covered with the silicon nitride medium layer of one deck insulation.GaAs base low-leakage current double cantilever beam switch HEMT is used for realizing NOR gate logic, and when HMET two is input as low level, cantilever beam is all in suspended state, and now the depleted layer of the raceway groove of HEMT blocks, and drain electrode exports as high level; When at least one input is high level, the cantilever beam that high level is corresponding is drop-down, and now the raceway groove of HEMT is in conducting state, and drain electrode exports as low level.The OR-NOT circuit realized based on GaAs base low-leakage current double cantilever beam switch HEMT by two forms rest-set flip-flop.
Namely the structure meeting above condition is considered as the rest-set flip-flop based on GaAs base low-leakage current cantilever switch HEMT NOR gate of the present invention.
Claims (2)
1. the rest-set flip-flop based on GaAs based low-leakage current double cantilever beam switch NOR gate, it is characterized in that: this rest-set flip-flop for substrate, half-insulating GaAs substrate (1) is provided with intrinsic GaAs layer (2), intrinsic AlGaAs layer (3), N with half-insulating GaAs substrate (1)
+alGaAs layer (4), source electrode (13), drain electrode (14), gate metal layer (5) and cantilever beam (12), cantilever beam (12) material is Au, and its one end is fixed in anchor district (8), and anchor district (8) are connected with input lead (9), signal input, a gate metal layer (5) and pull-down electrode (6) is respectively had in the below of cantilever beam (12), pull-down electrode (6) ground connection, the silicon nitride medium layer (7) covering one deck insulation above of pull-down electrode (6), source electrode (13), drain electrode (14) lays respectively at the both sides of gate metal layer (5), described drain electrode (14) is connected with pull-up resistor (17), source electrode (13) ground connection, not with drain electrode (14) two other input lead (9) of being connected respectively as the R port of rest-set flip-flop and S port, realize NOR gate logic function, the actuation voltage of cantilever beam (12) is set to the threshold voltage of HEMT, the two-dimensional electron gas passage that heterojunction between intrinsic GaAs layer (2) and intrinsic AlGaAs layer (3) is formed, cantilever beam is blocked by the depletion region of Schottky contacts when being in suspended state, when applying bias voltage and making cantilever beam (12) drop-down, the depletion region of Schottky contacts narrows, and two-dimensional electron gas passage is in conducting state.
2. the rest-set flip-flop based on GaAs based low-leakage current double cantilever beam switch NOR gate according to claim 1, is characterized in that; The input lead (9) of two cantilever beams (12) all input low level time, cantilever beam (12) is in suspended state, and because the depleted layer of Two-dimensional electron gas channel blocks, drain electrode (14) exports as high level; On the input lead (9) of at least one cantilever beam (12) during input high level, the cantilever beam (12) of input high level is drop-down, the Two-dimensional electron gas channel of HMET is in conducting state, drain electrode (14) exports as low level, owing to there is no grid leakage current, the power consumption in circuit is effectively reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379200.7A CN105141288B (en) | 2015-07-01 | 2015-07-01 | Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379200.7A CN105141288B (en) | 2015-07-01 | 2015-07-01 | Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105141288A true CN105141288A (en) | 2015-12-09 |
| CN105141288B CN105141288B (en) | 2018-02-13 |
Family
ID=54726525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510379200.7A Active CN105141288B (en) | 2015-07-01 | 2015-07-01 | Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105141288B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2680730C1 (en) * | 2017-10-17 | 2019-02-26 | федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" (Южный федеральный университет) | Active element of integrating switching center |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020015215A1 (en) * | 1994-05-05 | 2002-02-07 | Iridigm Display Corporation, A Delaware Corporation | Interferometric modulation of radiation |
| CN1921077A (en) * | 2005-08-26 | 2007-02-28 | 中国科学院微电子研究所 | Producing method for GaAs radical enhancing/depletion type fakement matching high electron mobility transistor gate |
| CN101471260A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Gate anneal method suitable for enhancement type InGaP/AlGaAs/InGaAs PHEMT device |
| US20110140127A1 (en) * | 2009-12-11 | 2011-06-16 | Su Hyoung Son | Semi-conductor light emitting device and method for manufacturing thereof |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
-
2015
- 2015-07-01 CN CN201510379200.7A patent/CN105141288B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020015215A1 (en) * | 1994-05-05 | 2002-02-07 | Iridigm Display Corporation, A Delaware Corporation | Interferometric modulation of radiation |
| CN1921077A (en) * | 2005-08-26 | 2007-02-28 | 中国科学院微电子研究所 | Producing method for GaAs radical enhancing/depletion type fakement matching high electron mobility transistor gate |
| CN101471260A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Gate anneal method suitable for enhancement type InGaP/AlGaAs/InGaAs PHEMT device |
| US20110140127A1 (en) * | 2009-12-11 | 2011-06-16 | Su Hyoung Son | Semi-conductor light emitting device and method for manufacturing thereof |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2680730C1 (en) * | 2017-10-17 | 2019-02-26 | федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" (Южный федеральный университет) | Active element of integrating switching center |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105141288B (en) | 2018-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104950172A (en) | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches | |
| CN102751320B (en) | Semiconductor device | |
| JP2021510461A (en) | Group III nitride enhancement type HEMT based on the composite barrier layer structure and its manufacturing method | |
| JP2010045364A (en) | Transistor | |
| CN104347689A (en) | Dual trench-gate IGBT structure | |
| CN108461540A (en) | Heterojunction bipolar transistor | |
| US20230178636A1 (en) | Field effect transistor having same gate and source doping, cell structure, and preparation method | |
| CN105044452A (en) | GaAs-based low-leakage current dual-cantilever beam switch based frequency detector | |
| CN105049033A (en) | NOR gate based on GaAs-based low-leakage current double-cantilever beam switch | |
| CN101515568A (en) | Method for manufacturing integrated enhanced-type and depletion-type HEMT on InP substrate | |
| CN105895682B (en) | It is inverse to lead insulated gate bipolar transistor structure and its corresponding manufacturing method | |
| CN105141288A (en) | RS trigger based on GaAs-based low leakage current double cantilever beam switch NOR gate | |
| CN104935256A (en) | Gallium arsenide base low leakage current double-fixed beam switch double-gate frequency multiplier | |
| CN112310208A (en) | Enhanced gallium nitride-based transistor, preparation method thereof and electronic device | |
| CN104935335A (en) | Gallium arsenide-based double-gate phase-locked loop circuit of double clamped-beam switches with low leakage current | |
| CN104993825A (en) | Gallium arsenide-based low-leakage-current double-cantilever-beam-switch double-gate frequency divider | |
| CN105049001A (en) | RS trigger based on GaAs-based low-leakage current four-cantilever beam switch | |
| CN114335145A (en) | HEMT device for inhibiting current collapse and production method thereof | |
| CN113871478A (en) | Novel semiconductor device with P-type channel characteristic based on double gates | |
| CN105140227B (en) | The NAND gate of gallium nitride base low-leakage current cantilever beam | |
| CN106024904B (en) | A kind of autoregistration GaAs-PMOS device architecture | |
| CN105024688B (en) | The NAND gate of gallium nitride base low-leakage current clamped beam | |
| CN105049038A (en) | GaAs-based low-leakage current double-fixed-fixed beam switch double-gate frequency divider | |
| CN105116222A (en) | Double-cantilever beam switch gallium-arsenide-based low-leakage-current microwave phase detector | |
| CN205881909U (en) | Novel normal pass type III -V heterojunction field effect transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Southeast University Address before: 211189 No. 2 Southeast University Road, Jiangning District, Nanjing, Jiangsu Patentee before: Southeast University |