CN105110287A - Method for gridding ferroelectric ceramic through femtosecond laser - Google Patents
Method for gridding ferroelectric ceramic through femtosecond laser Download PDFInfo
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- CN105110287A CN105110287A CN201510449277.7A CN201510449277A CN105110287A CN 105110287 A CN105110287 A CN 105110287A CN 201510449277 A CN201510449277 A CN 201510449277A CN 105110287 A CN105110287 A CN 105110287A
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- ferroelectric ceramics
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Abstract
The invention relates to a method for gridding ferroelectric ceramic through femtosecond laser, and belongs to the technical field of micro machining. The method for gridding ferroelectric ceramic through femtosecond laser provided by the invention comprises: preparing a gridded metal pattern on the ferroelectric ceramic through a method of photoetching, metal deposition and etching, and processing grids according to the pre-prepared gridded metal pattern through femtosecond laser etching to obtain a high-precision grid array. According to the method provided by the invention, a processing error is not controlled by controlling the stepping precision of a processing platform, but accumulated mechanical errors generated by the processing platform are eliminated by processing by the pre-prepared gridded pattern, the problem of horizontal heat dispersion of a ferroelectric uncooled focal plane detector assembly is solved, the spatial resolution of the detector assembly is improved, and the performance of the detector is effectively improved. The method provided by the invention is not only used for preparing high-precision grid arrays with large array scales, but also can be promoted to high-precision micro machining of a variety of patterns with large array scales, such as cylindrical arrays, round hole arrays, etc.
Description
Technical field
The invention belongs to Micrometer-Nanometer Processing Technology field, be specifically related to a kind of new femtosecond laser gridding ferroelectric ceramics method.
Background technology
Hybrid uncooled fpa detector device wafer gridding technique is the important component part of detector assembly technique.Lateral heat diffusion between detection unit is the one of the main reasons affecting hybrid ferroelectric non-brake method thermal imaging system heat picture spatial resolution, and grid heat-transmission isolation technology is then the important means eliminating this impact.The quality of ferroelectric ceramics gridding technique concerns the height of chip yield, and the line thickness of gridding also can affect the dutycycle of the photosensitive unit of detector simultaneously, thus affects the final performance of detector.So, to the requirement of chip gridding technique, while the segmentation realizing ferroelectric ceramics, except the centre-to-centre spacing and array scale that ensure pixel meet the demands, also require to reduce the damage to material.
External is that the method for the employing laser chemistry auxiliary etch once reported in the nineties in last century of the TI company of representative or ion beam etching carries out ferroelectric ceramics gridding with the U.S..At home, the similar approach adopted with reporting also is had abroad.
Utilize ion beam etching ferroelectric ceramics, masking layer need be adopted to carry out shelter etching.Because ion beam etching ferroelectric ceramics speed is much smaller than the etch rate to masking layer, therefore solve find suitable masking layer and ion beam etching parameter very difficult.
Along with the development of laser assisted microprocessing, laser chemistry auxiliary etch substitute by femtosecond laser parallel micromachining, femtosecond laser parallel micromachining is very noticeable forward position research direction in world today's laser, photovoltaic industry.Due to the ultrashort, superpower of femtosecond laser and the large feature of high focusing power 3, there is greater advantage than laser chemistry auxiliary etch.Its energy can be concentrated on the zone of action of restriction by femtosecond laser all, quickly and accurately, have other Laser Processing incomparable without advantages such as hot melt district " cold " processing, high accuracy, high-quality, high-resolution.Adopting femtosecond laser to carry out ferroelectric ceramics gridding technique, is the inexorable trend realizing high accuracy, large array, high-performance uncooled fpa detector assembly microfabrication.
Summary of the invention
For high accuracy, large array, high-performance iron electricity non-refrigeration focus planardetector assembly microfabrication problem, the invention provides a kind of new femtosecond laser gridding ferroelectric ceramics method.On ferroelectric ceramics surface, adopt femtosecond laser to carry out the preparation of crisscross grid, achieve large-scale equal-sized grid array, the groove width of generation, the degree of depth and profile shape uniformity.
The technical solution used in the present invention is as follows:
A kind of femtosecond laser gridding ferroelectric ceramics method, comprises the steps:
Step a, ferroelectric ceramics cleans:
(1) with toluene soak ferroelectric ceramics 4-5 hour;
(2) change toluene, ferroelectric ceramics is soaked in ultrasonic cleaning 5-10 minute in toluene; In triplicate;
(3) solvent is changed to acetone, ferroelectric ceramics is soaked in ultrasonic cleaning 5-10 minute in acetone; In triplicate;
(4) solvent is changed to ethanol, ferroelectric ceramics is soaked in ultrasonic cleaning 5-10 minute in ethanol; In triplicate;
(5) residual liquid on ferroelectric ceramics surface is dried up with nitrogen; Baking oven put into by ferroelectric ceramics, and temperature is set to 80 DEG C, baking 2-3 hour;
Step b, metal level deposits: by the method for magnetron sputtering, through ferroelectric ceramics surface sputtering 1000-1500 titanium tungsten film layer of step a process or nickel chromium triangle rete, obtains the ferroelectric ceramics being coated with titanium tungsten film or nickel chromium triangle film;
Step c, photoetching: the gridding pattern processed by pre-designed needs, makes lithography mask version; Utilize photoetching process, by the ferroelectric ceramics surface being coated with titanium tungsten film or nickel chromium triangle film that pre-designed gridding design transfer obtains to step b, the gridding photoetching offset plate figure needed for being formed on the ferroelectric ceramics surface being coated with titanium tungsten film or nickel chromium triangle film;
Steps d, ion beam etching metal level: utilize ion beam etching, the surface obtained step c processes with the ferroelectric ceramics being coated with titanium tungsten film or nickel chromium triangle film of gridding photoetching offset plate figure, the titanium tungsten film in exposed grid groove or nickel chromium triangle film etching clean;
Step e, cleaning of removing photoresist: the ferroelectric ceramics obtained through steps d process soaks 1-2 hour in acetone, and is cleaned up by photoresist by ultrasonic cleaning, forms the ferroelectric ceramics with gridding metal pattern;
Step f, femtosecond laser etches: utilize femtosecond laser to carry out gridding; The gridding metal pattern on the ferroelectric ceramics surface with gridding metal pattern obtained by step e collects in software, laser facula is according to the gridding metal pattern processing in software, the grid groove not having titanium tungsten film or nickel chromium triangle film to cover is etched by femtosecond laser, obtains the ferroelectric ceramics etched by femtosecond laser;
Step g, removes metal level: the method adopting ion beam etching, titanium tungsten film or the nickel chromium triangle film of the ferroelectric ceramics etched by femtosecond laser obtained by step f are removed, and complete the gridding of ferroelectric ceramics.
Further, preferably the technological parameter of step f femtosecond laser is: femtosecond laser pulsewidth is less than 280fs, laser power 50mW, optical maser wavelength 258nm, spot diameter 5 microns.
Further, preferably, described ferroelectric ceramics is barium-strontium titanate ceramic, lead zirconate-titanate ceramic or tantalum scandium acid plumbum pottery.
compared with prior art, its beneficial effect is in the present invention:
(1) femtosecond laser gridding ferroelectric ceramics method of the present invention, not by the stepping accuracy of controlled working platform movement come controlled working error, but processed by previously prepared gridding pattern, eliminate the mechanical cumulative errors that machine table produces, achieve high-precision grid array.
(2) by femtosecond laser gridding ferroelectric ceramics technology of the present invention, solve a difficult problem for ferroelectric uncooled fpa detector assembly lateral heat diffusion, improve the spatial resolution of detector assembly, effectively improve the performance of detector.
(3) the present invention not only can be widely applied to the preparation of large array scale high accuracy grid array, and the present invention can be generalized to the microfabrication of the multiple figures such as the high-precision cylindrical-array of large array scale, array of circular apertures.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of gridding array of the present invention;
Fig. 2 is the process chart of femtosecond laser gridding ferroelectric ceramics of the present invention;
Fig. 3 is the profile of the ferroelectric ceramics being coated with titanium tungsten film or nickel chromium triangle film;
Fig. 4 is the profile that be coated with the ferroelectric ceramics of titanium tungsten film or nickel chromium triangle film of surface with gridding photoetching offset plate figure;
Fig. 5 is the profile of the ferroelectric ceramics after ion beam etching metal level;
Fig. 6 is the profile of the ferroelectric ceramics with gridding metal pattern;
Fig. 7 is the profile of the ferroelectric ceramics etched by femtosecond laser;
Fig. 8 is the profile of femtosecond laser gridding ferroelectric ceramics of the present invention;
Wherein, 1 is ferroelectric ceramics, and 2 is titanium tungsten film layer or nickel chromium triangle rete, and 3 is photoresist layer.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail.
It will be understood to those of skill in the art that the following example only for illustration of the present invention, and should not be considered as limiting scope of the present invention.Unreceipted concrete technology or condition person in embodiment, according to the technology described by the document in this area or condition or carry out according to product description.Agents useful for same or the unreceipted production firm person of instrument, being can by buying the conventional products obtained.
It is SCAengineerV2.5 that femtosecond laser of the present invention etches software used.
Embodiment 1
The present embodiment will form large-scale equal-sized grid array as shown in Figure 1, and the processing step of realization is as follows:
Step a, as shown in Figures 2 and 3, cleans ferroelectric ceramics 1, specifically comprises:
(1) toluene soak ferroelectric ceramics 4 hours are used;
(2) change toluene, ferroelectric ceramics to be soaked in toluene ultrasonic cleaning 5 minutes; In triplicate;
(3) solvent is changed to acetone, ferroelectric ceramics to be soaked in acetone ultrasonic cleaning 5 minutes; In triplicate;
(4) solvent is changed to ethanol, ferroelectric ceramics to be soaked in ethanol ultrasonic cleaning 5 minutes; In triplicate;
(5) residual liquid on ferroelectric ceramics surface is dried up with nitrogen; Baking oven put into by ferroelectric ceramics, and temperature is set to 80 DEG C, toasts 2 hours;
Step b, metal level deposits: as shown in Figure 3, by the method for magnetron sputtering, at the ferroelectric ceramics 1 surface sputtering 1000 titanium tungsten film layer 2 through step a process, obtain the ferroelectric ceramics being coated with titanium tungsten film.
Step c, photoetching: as shown in Figure 4, by the gridding pattern that pre-designed needs are processed, makes lithography mask version; Utilize photoetching process, by the ferroelectric ceramics surface being coated with titanium tungsten film that pre-designed gridding design transfer obtains to step b, the gridding photoetching offset plate figure needed for formation, grid has photoresist layer 3 protect, grid groove is exposed.
Steps d, ion beam etching metal level: as shown in Figure 5, utilizes ion beam etching, and the surface obtained step c processes with the ferroelectric ceramics being coated with titanium tungsten film of gridding photoetching offset plate figure, clean for the titanium tungsten film etching in exposed grid groove; Grid there is photoresist protect titanium tungsten film to remain.
Step e, cleaning of removing photoresist: as Fig. 6, the ferroelectric ceramics obtained through steps d process soaks 1 hour in acetone, and is cleaned up by photoresist by ultrasonic cleaning, forms the ferroelectric ceramics with gridding metal pattern;
Step f, femtosecond laser etches: as shown in Figure 7, utilize femtosecond laser to carry out gridding.Technological parameter is set: femtosecond laser pulsewidth is less than 280fs, laser power 50mW, optical maser wavelength 258nm, spot diameter 5 microns.The gridding metal pattern on the ferroelectric ceramics surface with gridding metal pattern obtained by step e collects in software, laser facula is according to the gridding metal pattern processing in software, the grid groove not having titanium tungsten film to cover is etched by femtosecond laser, obtains the ferroelectric ceramics etched by femtosecond laser;
Step g, removes metal level: as shown in Figure 8, and adopt the method for ion beam etching, titanium tungsten film or the nickel chromium triangle film of the ferroelectric ceramics etched by femtosecond laser obtained by step f are removed, and complete the gridding of ferroelectric ceramics.
Ferroelectric ceramics described in the present embodiment is barium-strontium titanate ceramic.
Embodiment 2
The present embodiment will form large-scale equal-sized grid array as shown in Figure 1, and the processing step of realization is as follows:
Step a, as shown in Figures 2 and 3, cleans ferroelectric ceramics 1, specifically comprises:
(1) toluene soak ferroelectric ceramics 5 hours are used;
(2) change toluene, ferroelectric ceramics to be soaked in toluene ultrasonic cleaning 10 minutes; In triplicate;
(3) solvent is changed to acetone, ferroelectric ceramics to be soaked in acetone ultrasonic cleaning 10 minutes; In triplicate;
(4) solvent is changed to ethanol, ferroelectric ceramics to be soaked in ethanol ultrasonic cleaning 01 minute; In triplicate;
(5) residual liquid on ferroelectric ceramics surface is dried up with nitrogen; Baking oven put into by ferroelectric ceramics, and temperature is set to 80 DEG C, toasts 3 hours;
Step b, metal level deposits: as shown in Figure 3, by the method for magnetron sputtering, at the ferroelectric ceramics 1 surface sputtering 1500 nickel chromium triangle rete 2 through step a process, obtain the ferroelectric ceramics being coated with nickel chromium triangle film.
Step c, photoetching: as shown in Figure 4, by the gridding pattern that pre-designed needs are processed, makes lithography mask version; Utilize photoetching process, by the ferroelectric ceramics surface being coated with nickel chromium triangle film that pre-designed gridding design transfer obtains to step b, the gridding photoetching offset plate figure needed for formation, grid has photoresist layer 3 protect, grid groove is exposed.
Steps d, ion beam etching metal level: as shown in Figure 5, utilizes ion beam etching, and the surface obtained step c processes with the ferroelectric ceramics being coated with nickel chromium triangle film of gridding photoetching offset plate figure, clean for the nickel chromium triangle film etching in exposed grid groove; Grid there is photoresist protect nickel chromium triangle film to remain.
Step e, cleaning of removing photoresist: as Fig. 6, the ferroelectric ceramics obtained through steps d process soaks 2 hours in acetone, and is cleaned up by photoresist by ultrasonic cleaning, forms the ferroelectric ceramics with gridding metal pattern;
Step f, femtosecond laser etches: as shown in Figure 7, utilize femtosecond laser to carry out gridding.Technological parameter is set: femtosecond laser pulsewidth is less than 280fs, laser power 50mW, optical maser wavelength 258nm, spot diameter 5 microns.The gridding metal pattern on the ferroelectric ceramics surface with gridding metal pattern obtained by step e collects in software, laser facula is according to the gridding metal pattern processing in software, the grid groove not having nickel chromium triangle film to cover is etched by femtosecond laser, obtains the ferroelectric ceramics etched by femtosecond laser;
Step g, removes metal level: as shown in Figure 8, and adopt the method for ion beam etching, titanium tungsten film or the nickel chromium triangle film of the ferroelectric ceramics etched by femtosecond laser obtained by step f are removed, and complete the gridding of ferroelectric ceramics.
Ferroelectric ceramics described in the present embodiment is lead zirconate-titanate ceramic.
Embodiment 3
The present embodiment will form large-scale equal-sized grid array as shown in Figure 1, and the processing step of realization is as follows:
Step a, as shown in Figures 2 and 3, cleans ferroelectric ceramics 1, specifically comprises:
(1) toluene soak ferroelectric ceramics 4.5 hours are used;
(2) change toluene, ferroelectric ceramics to be soaked in toluene ultrasonic cleaning 6 minutes; In triplicate;
(3) solvent is changed to acetone, ferroelectric ceramics to be soaked in acetone ultrasonic cleaning 7 minutes; In triplicate;
(4) solvent is changed to ethanol, ferroelectric ceramics to be soaked in ethanol ultrasonic cleaning 8 minutes; In triplicate;
(5) residual liquid on ferroelectric ceramics surface is dried up with nitrogen; Baking oven put into by ferroelectric ceramics, and temperature is set to 80 DEG C, toasts 2.3 hours;
Step b, metal level deposits: as shown in Figure 3, by the method for magnetron sputtering, through the ferroelectric ceramics 1 surface sputtering 1300 titanium tungsten film layer 2 of step a process or nickel chromium triangle rete 2, obtains the ferroelectric ceramics being coated with titanium tungsten film or nickel chromium triangle film.
Step c, photoetching: as shown in Figure 4, by the gridding pattern that pre-designed needs are processed, makes lithography mask version; Utilize photoetching process, by the ferroelectric ceramics surface being coated with titanium tungsten film or nickel chromium triangle film that pre-designed gridding design transfer obtains to step b, the gridding photoetching offset plate figure needed for formation, grid has photoresist layer 3 protect, grid groove is exposed.
Steps d, ion beam etching metal level: as shown in Figure 5, utilize ion beam etching, the surface obtained step c processes with the ferroelectric ceramics being coated with titanium tungsten film or nickel chromium triangle film of gridding photoetching offset plate figure, the titanium tungsten film in exposed grid groove or nickel chromium triangle film etching clean; Grid there is photoresist protect titanium tungsten film or nickel chromium triangle film to remain.
Step e, cleaning of removing photoresist: as Fig. 6, the ferroelectric ceramics obtained through steps d process soaks 1.5 hours in acetone, and is cleaned up by photoresist by ultrasonic cleaning, forms the ferroelectric ceramics with gridding metal pattern;
Step f, femtosecond laser etches: as shown in Figure 7, utilize femtosecond laser to carry out gridding.Technological parameter is set: femtosecond laser pulsewidth is less than 280fs, laser power 50mW, optical maser wavelength 258nm, spot diameter 5 microns.The gridding metal pattern on the ferroelectric ceramics surface with gridding metal pattern obtained by step e collects in software, laser facula is according to the gridding metal pattern processing in software, the grid groove not having titanium tungsten film or nickel chromium triangle film to cover is etched by femtosecond laser, obtains the ferroelectric ceramics etched by femtosecond laser;
Step g, removes metal level: as shown in Figure 8, and adopt the method for ion beam etching, titanium tungsten film or the nickel chromium triangle film of the ferroelectric ceramics etched by femtosecond laser obtained by step f are removed, and complete the gridding of ferroelectric ceramics.
Ferroelectric ceramics described in the present embodiment is tantalum scandium acid plumbum pottery.
More than show and describe general principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and description just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection domain is defined by appending claims and equivalent thereof.
Claims (3)
1. a femtosecond laser gridding ferroelectric ceramics method, is characterized in that, comprise the steps:
Step a, ferroelectric ceramics cleans:
(1) with toluene soak ferroelectric ceramics 4-5 hour;
(2) change toluene, ferroelectric ceramics is soaked in ultrasonic cleaning 5-10 minute in toluene; In triplicate;
(3) solvent is changed to acetone, ferroelectric ceramics is soaked in ultrasonic cleaning 5-10 minute in acetone; In triplicate;
(4) solvent is changed to ethanol, ferroelectric ceramics is soaked in ultrasonic cleaning 5-10 minute in ethanol; In triplicate;
(5) residual liquid on ferroelectric ceramics surface is dried up with nitrogen; Baking oven put into by ferroelectric ceramics, and temperature is set to 80 DEG C, baking 2-3 hour;
Step b, metal level deposits: by the method for magnetron sputtering, through ferroelectric ceramics surface sputtering 1000-1500 titanium tungsten film layer of step a process or nickel chromium triangle rete, obtains the ferroelectric ceramics being coated with titanium tungsten film or nickel chromium triangle film;
Step c, photoetching: the gridding pattern processed by pre-designed needs, makes lithography mask version; Utilize photoetching process, by the ferroelectric ceramics surface being coated with titanium tungsten film or nickel chromium triangle film that pre-designed gridding design transfer obtains to step b, the gridding photoetching offset plate figure needed for being formed on the ferroelectric ceramics surface being coated with titanium tungsten film or nickel chromium triangle film;
Steps d, ion beam etching metal level: utilize ion beam etching, the surface obtained step c processes with the ferroelectric ceramics being coated with titanium tungsten film or nickel chromium triangle film of gridding photoetching offset plate figure, the titanium tungsten film in exposed grid groove or nickel chromium triangle film etching clean;
Step e, cleaning of removing photoresist: the ferroelectric ceramics obtained through steps d process soaks 1-2 hour in acetone, and is cleaned up by photoresist by ultrasonic cleaning, forms the ferroelectric ceramics with gridding metal pattern;
Step f, femtosecond laser etches: utilize femtosecond laser to carry out gridding; The gridding metal pattern on the ferroelectric ceramics surface with gridding metal pattern obtained by step e collects in software, laser facula is according to the gridding metal pattern processing in software, the grid groove not having titanium tungsten film or nickel chromium triangle film to cover is etched by femtosecond laser, obtains the ferroelectric ceramics etched by femtosecond laser;
Step g, removes metal level: the method adopting ion beam etching, titanium tungsten film or the nickel chromium triangle film of the ferroelectric ceramics etched by femtosecond laser obtained by step f are removed, and complete the gridding of ferroelectric ceramics.
2. femtosecond laser gridding ferroelectric ceramics method according to claim 1, it is characterized in that, the technological parameter of step f femtosecond laser is: femtosecond laser pulsewidth is less than 280fs, laser power 50mW, optical maser wavelength 258nm, spot diameter 5 microns.
3. femtosecond laser gridding ferroelectric ceramics method according to claim 1, is characterized in that, described ferroelectric ceramics is barium-strontium titanate ceramic, lead zirconate-titanate ceramic or tantalum scandium acid plumbum pottery.
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