CN104784816B - Cuff electrode having garland structure and manufacturing method thereof - Google Patents
Cuff electrode having garland structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104784816B CN104784816B CN201510142082.8A CN201510142082A CN104784816B CN 104784816 B CN104784816 B CN 104784816B CN 201510142082 A CN201510142082 A CN 201510142082A CN 104784816 B CN104784816 B CN 104784816B
- Authority
- CN
- China
- Prior art keywords
- garland
- electrode
- garland structure
- lead
- strip belt
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000002655 kraft paper Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 13
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 2
- 229920006254 polymer film Polymers 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 210000005036 nerve Anatomy 0.000 abstract description 12
- 230000008961 swelling Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 238000007142 ring opening reaction Methods 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 210000004126 nerve fiber Anatomy 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000015097 nutrients Nutrition 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000004064 dysfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 230000000926 neurological effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
Abstract
The invention provides a cuff electrode having a garland structure. The cuff electrode having the garland structure comprises a stripped belt (1), an extensible garland structure (2), a lead (3), an electrode point (4), a ratchet (5), a lock ring (7), a lock ring opening (6) and a lead node (8). According to the garland structure, after the cuff electrode is planted, the stripped belt is extended along swelling of nerves, tissues are not pressed, neurhumor is not blocked due to the hollow garland structure, meanwhile the electrode point and the nerves are in close contact, and the exciting effect and the signal recording accuracy are guaranteed.
Description
Technical field
There is garland structure the present invention relates to technical field of micro and nano fabrication, biomedical engineering field, more particularly to one kind
Kraft electrode and its manufacture method.
Background technology
Kraft electrode can be used for record nerve signal and stimulate nerve fiber as a kind of nerve electrode of implanted.
By the stimulation to nerve fiber, it is possible to achieve the control to respective muscle motion, so as to recover the part of Patients of Spinal
Dysfunction.
Existing Kraft electrode will need to stimulate the neurological region of part fully wrapped around, this fully wrapped around nerve fiber
Mode can cause the nutrient solution for being wrapped region to be blocked.Meanwhile, after implant electrode, easily there is swelling in nerve fiber, and due to
The diameter of Kraft electrode is immobilized after the completion of implantation, and nerve fiber can be caused to be oppressed.
Existing Kraft electrode includes the U.S. Patent application of Medtronic Inc., and patent No. US5344438 is a kind of only to wrap up
U-shaped card husband's electrode of partial nerve, this electrode can mitigate neurothlipsis, but can not stimulate and record whole nerve, together
When, also easily by external interference.
The patent application of Peking University, the patent No. 201410024820, a kind of implanted Kraft nerve electrode and its making
Method, the construction according to band proposes a kind of adjustable tie-type Kraft electrode of diameter, can by the design of band ratchet,
Precise control Kraft diameter, but the diameter of this electrode is after the implants and non-adjustable, it is equally possible to the pressure of nerve can be caused
Compel.
In sum, to deposit diameter after the implantation non-adjustable for existing Kraft electrode, organizes easy swelling, big to neurothlipsis,
The problems such as nutrient solution blocks.
The content of the invention
The present invention provides a kind of Kraft electrode with garland structure, including strip belt (1), stretchable garland structure
(2), lead (3), electrode points (4), ratchet (5), lock ring (7), shackle openings (6) and lead node (8), the garland structure
(2) centre of strip belt (1) is arranged on, and is connected to strip belt (1)；Lead (3) and electrode points (4) are in garland structure
(2) the same side.
The beneficial effect that the present invention can be produced is：1st, garland structure is used on the belt of Kraft electrode, it is ensured that
During neural swelling, electrode belt can reduce damage and compressing of the implant electrode to nerve with the swelling Automatic-drawing of nerve；
2nd, Kraft electrode uses garland structure, and nerve is not exclusively wrapped, and a part can well be connected with the external world so that internal battalion
Nutrient solution will not be blocked；3rd, electrode points can be had with nerve and preferably be contacted using raised three-dimensional structure, it is ensured that
The effect for stimulating and recording.
Brief description of the drawings
Fig. 1 is Kraft electrode schematic diagram of the present invention with garland structure；
Fig. 2 is the wavy shaped configuration mode of garland in Kraft electrode of the present invention with garland structure；
(a)~(b) is the diamond structure mode of garland in Kraft electrode of the present invention with garland structure in Fig. 3.
Description of reference numerals：
1：Kraft belt
2：Garland structure
3：Lead
4：Metal electrode
5：Ratchet
6：Shackle openings
7：Lock ring
8：Lead node
9：The intensity enhancing structure added in waveform garland structure
10：The intensity enhancing structure added in rhombus garland structure
Specific embodiment
With reference to Figure of description and embodiment, specific embodiment of the invention is described in further detail.With
Lower embodiment is merely to illustrate the present invention, but can not be used for limiting the scope of the present invention.
As shown in figure 1, Kraft electrode of the present invention with garland structure includes strip belt (1), stretchable garland knot
Structure (2), lead (3), electrode points (4), ratchet (5), lock ring (7), shackle openings (6) and lead node (8).The garland knot
Structure (2) is arranged on the centre of strip belt (1), and is connected to strip belt (1)；Lead (3) and electrode points (4) are in garland structure
(2) the same side.
The strip belt (1) and garland structure (2) are made up of same material, and the material is with bio-compatibility
Thin polymer film, can be the Parylene with bio-compatibility.The lead (3) and electrode points (4) are by same material
It is made and conductive energy, the material can be the metallic films such as titanium, gold, platinum by physical vapor deposition growth.
Wherein, the width of strip belt (1) is 6mm, and length is 15mm, and thickness is 10~20 μm；
Wherein, wire widths are 40 μm, and the size of electrode points is 500 μm of 400 μm of 400 μ m or 500 μ ms；
Wherein, the garland structure (2) includes wave garland structure and rhombus garland structure, wave garland structure and rhombus
The length of side width of garland structure is 250 μm of 100 μ m.Referring to accompanying drawing 1-3, it is preferred that between the both sides of the wave garland structure
Angle be 10~170 °, the angle between the both sides of the rhombus garland structure is 10~170 °, in one embodiment, the ripple
Angle between the both sides of unrestrained garland structure and the rhombus garland structure can be 10 °, in one embodiment, the wave garland
Angle between the both sides of structure and the rhombus garland structure can be 90 °, in one embodiment, the wave garland structure and
Angle between the both sides of the rhombus garland structure can be 170 °, meanwhile, there is intensity enhancing structure in each side junction.
Wherein, electrode points (4) are three-dimensional bulge-structures, higher than strip belt (1).
The ratchet (5) is present in the both sides of strip belt in two separate ranks, and each row can have multiple, apart from ratchet opening
(6) distance can be arranged to the girth of the corresponding circle of different fixed diameters.
The ratchet (5) and lock ring (7) are made up of same material, and the material has certain mechanical strength, can be logical
Cross metallic nickel obtained from plating.
The preparation method of the Kraft electrode with garland structure of the present invention, comprises the following steps：
In grown above silicon silicon oxide/nitride layer, wherein silicon oxide layer is located at lower floor, and silicon nitride layer is located at upper strata, leads to
The mask that etch front silicon nitride is made in photoetching is crossed, etching oxidation silicon, it would be desirable to which the silicon face of corrosion exposes is corroded using KOH
The silicon of certain depth；
Using physical vapor deposition in one layer of sacrifice layer Al of reeded grown above silicon；A strata is deposited on Al to two
Toluene；
It is the electrode points and lead of titanium/gold/platinum to use stripping technology to prepare material, and deposits the second strata thereon to two
Toluene；
Lock ring and ratchet are prepared using processing steps such as photoetching, plating；
Electrode points are exposed by photoetching, etching etc., and further etching obtains the opening of lock ring and the profile of electrode.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
Specific implementation of the invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should be all considered as belonging to of the invention
Protection domain.
Claims (1)
1. a kind of Kraft electrode with garland structure, including strip belt (1), lead (3), electrode points (4), ratchet (5), lock
Ring (7), shackle openings (6) and lead node (8), it is characterised in that the Kraft electrode, also including stretchable garland knot
Structure (2), the garland structure (2) is arranged on the centre of strip belt (1), and is connected to strip belt (1)；Lead (3) and electricity
The same side of limit (4) in garland structure (2)；
Wherein, the strip belt (1) and garland structure (2) are made up of same material, and the material is with bio-compatibility
Thin polymer film；
Wherein, the lead (3) and electrode points (4) are also made up of same material, the conductive energy of the material；
Wherein, the garland structure includes wave garland structure and rhombus garland structure, the both sides of the wave garland structure it
Between angle be 10~170 °, the angle between the both sides of the rhombus garland structure is 10~170 °, meanwhile, each side junction
There is intensity enhancing structure；
Wherein, the electrode points (4) are three-dimensional bulge-structures, higher than strip belt (1)；
Wherein, the ratchet (5) is present in the both sides of strip belt in two separate ranks, each to show multiple, apart from shackle openings (6)
Distance is arranged to the girth of the corresponding circle of different fixed diameters；
Wherein, the ratchet (5) and lock ring (7) are made up of same material, and the material is by metallic nickel obtained from plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510142082.8A CN104784816B (en) | 2015-03-27 | 2015-03-27 | Cuff electrode having garland structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510142082.8A CN104784816B (en) | 2015-03-27 | 2015-03-27 | Cuff electrode having garland structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104784816A CN104784816A (en) | 2015-07-22 |
| CN104784816B true CN104784816B (en) | 2017-05-24 |
Family
ID=53550287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510142082.8A Expired - Fee Related CN104784816B (en) | 2015-03-27 | 2015-03-27 | Cuff electrode having garland structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104784816B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106621035B (en) * | 2016-12-09 | 2023-05-26 | 北京品驰医疗设备有限公司 | Directional deep brain electrode with parasitic capacitance suppression function |
| CN112472096B (en) * | 2020-12-11 | 2024-03-19 | 西北工业大学 | Stress-induced self-curling reticular kappa neural electrode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1070832A (en) * | 1992-09-12 | 1993-04-14 | 刘昌豪 | Mieroelectronic body-building belt |
| US5324322A (en) * | 1992-04-20 | 1994-06-28 | Case Western Reserve University | Thin film implantable electrode and method of manufacture |
| CN103736204A (en) * | 2014-01-20 | 2014-04-23 | 北京大学 | Implanted cuff neural electrode and manufacturing method thereof |
| CN103736202A (en) * | 2014-01-07 | 2014-04-23 | 上海交通大学 | Preparing method of ring-shaped Kraft microelectrode based on self-stress bending |
-
2015
- 2015-03-27 CN CN201510142082.8A patent/CN104784816B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5324322A (en) * | 1992-04-20 | 1994-06-28 | Case Western Reserve University | Thin film implantable electrode and method of manufacture |
| CN1070832A (en) * | 1992-09-12 | 1993-04-14 | 刘昌豪 | Mieroelectronic body-building belt |
| CN103736202A (en) * | 2014-01-07 | 2014-04-23 | 上海交通大学 | Preparing method of ring-shaped Kraft microelectrode based on self-stress bending |
| CN103736204A (en) * | 2014-01-20 | 2014-04-23 | 北京大学 | Implanted cuff neural electrode and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN104784816A (en) | 2015-07-22 |
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| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170524 |