CN104784816A - Cuff electrode having garland structure and manufacturing method thereof - Google Patents
Cuff electrode having garland structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104784816A CN104784816A CN201510142082.8A CN201510142082A CN104784816A CN 104784816 A CN104784816 A CN 104784816A CN 201510142082 A CN201510142082 A CN 201510142082A CN 104784816 A CN104784816 A CN 104784816A
- Authority
- CN
- China
- Prior art keywords
- electrode
- garland
- garland structure
- kraft
- silicon
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000002655 kraft paper Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229920006254 polymer film Polymers 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 1
- 210000005036 nerve Anatomy 0.000 abstract description 11
- 230000008961 swelling Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 238000007142 ring opening reaction Methods 0.000 abstract 1
- 210000001519 tissue Anatomy 0.000 description 5
- 239000007943 implant Substances 0.000 description 3
- 230000001537 neural effect Effects 0.000 description 3
- 235000016709 nutrition Nutrition 0.000 description 3
- 206010029174 Nerve compression Diseases 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000004936 stimulating effect Effects 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000000926 neurological effect Effects 0.000 description 1
Abstract
The invention provides a cuff electrode having a garland structure. The cuff electrode having the garland structure comprises a stripped belt (1), an extensible garland structure (2), a lead (3), an electrode point (4), a ratchet (5), a lock ring (7), a lock ring opening (6) and a lead node (8). According to the garland structure, after the cuff electrode is planted, the stripped belt is extended along swelling of nerves, tissues are not pressed, neurhumor is not blocked due to the hollow garland structure, meanwhile the electrode point and the nerves are in close contact, and the exciting effect and the signal recording accuracy are guaranteed.
Description
Technical field
The present invention relates to technical field of micro and nano fabrication, biomedical engineering field, particularly relate to a kind of Kraft electrode and the manufacture method thereof with garland structure.
Background technology
Kraft electrode, as a kind of nerve electrode of implanted, may be used for record nerve signal and stimulating neural tissue.By the stimulation to nervous tissue, the control to respective muscle motion can be realized, thus recover the partial function obstacle of Patients of Spinal.
Existing Kraft electrode wraps up completely by needing the neurological region of stimulation part, and this mode of wrapping up nervous tissue completely can cause the nutritional solution being wrapped region to get clogged.Meanwhile, after implant electrode, easily there is swelling in nervous tissue, and immobilize after implantation completes due to the diameter of Kraft electrode, and nervous tissue can be caused oppressed.
Existing Kraft electrode comprises the U.S. Patent application of Medtronic Inc., patent No. US5344438, the U-shaped Kraft electrode of a kind of wrapping portion nerve, this electrode can alleviate nerve compression, but can not stimulate and record whole nerve, meanwhile, also easily by external interference.
The patent application of Peking University, the patent No. 201410024820, a kind of implanted Kraft nerve electrode and preparation method thereof, the adjustable tie-type Kraft electrode of a kind of diameter is proposed according to the structure of band, can by the design of band ratchet, accurate control Kraft diameter, but the diameter of this electrode is after the implants and non-adjustable, may cause neural compressing equally.
In sum, it is non-adjustable that existing Kraft electrode deposits diameter after the implantation, organizes easy swelling, large to nerve compression, the problems such as nutritional solution obstruction.
Summary of the invention
The invention provides a kind of Kraft electrode with garland structure, comprise rectangular belt (1), stretchable garland structure (2), lead-in wire (3), electrode points (4), ratchet (5), lock ring (7), shackle openings (6) and lead-in wire node (8), described garland structure (2) is arranged on the centre of rectangular belt (1), and is connected to rectangular belt (1); Lead-in wire (3) and electrode points (4) are in the same sides of garland structure (2).
The beneficial effect that the present invention can produce is: 1, on the belt of Kraft electrode, use garland structure, and when can ensure neural swelling, electrode belt along with the swelling Automatic-drawing of nerve, can reduce implant electrode to the damage of nerve and compressing; 2, Kraft electrode adopts garland structure, and nerve is not exclusively wrapped, and a part can be connected well with the external world, and proper interior nutritional solution can not be got clogged; 3, electrode points adopts protruding three dimensional structure, can have better contact with nerve, ensure that the effect stimulating and record.
Accompanying drawing explanation
Fig. 1 is the Kraft electrode schematic diagram that the present invention has garland structure;
Fig. 2 is the wavy shaped configuration mode that the present invention has garland in the Kraft electrode of garland structure;
In Fig. 3, (a) ~ (b) is the diamond structure mode that the present invention has garland in the Kraft electrode of garland structure.
Description of reference numerals:
1: Kraft belt
2: garland structure
3: lead-in wire
4: metal electrode
5: ratchet
6: shackle openings
7: lock ring
8: lead-in wire node
9: the intensity enhancing structure of adding in waveform garland structure
10: the intensity enhancing structure of adding in rhombus garland structure
Detailed description of the invention
Below in conjunction with Figure of description and embodiment, the specific embodiment of the present invention is described in further detail.Following examples only for illustration of the present invention, but can not be used for limiting the scope of the invention.
As shown in Figure 1, the Kraft electrode that the present invention has garland structure comprises long strip (1), stretchable garland structure (2), lead-in wire (3), electrode points (4), ratchet (5), lock ring (7), shackle openings (6) and lead-in wire node (8).Described garland structure (2) is arranged on the centre of rectangular belt (1), and is connected to rectangular belt (1); Lead-in wire (3) and electrode points (4) are in the same sides of garland structure (2).
Described rectangular belt (1) and garland structure (2) are made up of same material, and this material is the thin polymer film with bio-compatibility, can be the Parylene with bio-compatibility.Described lead-in wire (3) and electrode points (4) are made up of same material and have electric conductivity, and this material can be the metallic film such as titanium, gold, platinum grown by physical vapor deposition.
Wherein, the width of rectangular belt (1) is 6mm, and length is 15mm, and thickness is 10 ~ 20 μm;
Wherein, wire widths is 40 μm, and the size of electrode points is 400 μm × 400 μm or 500 μm × 500 μm;
Wherein, described garland structure (2) comprises wave garland structure and rhombus garland structure, and the length of side width of wave garland structure and rhombus garland structure is 100 μm × 250 μm.See accompanying drawing 1-3, preferably, angle between the both sides of this wave garland structure is 10 ~ 170 °, angle between the both sides of this rhombus garland structure is 10 ~ 170 °, in one embodiment, angle between the both sides of this wave garland structure and this rhombus garland structure can be 10 °, in one embodiment, angle between the both sides of this wave garland structure and this rhombus garland structure can be 90 °, in one embodiment, angle between the both sides of this wave garland structure and this rhombus garland structure can be 170 °, simultaneously, there is intensity enhancing structure in junction, each limit.
Wherein, electrode points (4) is three-dimensional bulge-structure, higher than rectangular belt (1).
Described ratchet (5) is present in the both sides of rectangular belt in two separate ranks, and every string can have multiple, and the distance of distance ratchet opening (6) can be arranged to the girth of circle corresponding to different fixed diameter.
Described ratchet (5) and lock ring (7) are made up of same material, and this material has certain mechanical strength, can be the metallic nickels obtained by electroplating.
The preparation method with the Kraft electrode of garland structure of the present invention, comprises the following steps:
In grown above silicon silicon oxide/nitride layer, wherein silicon oxide layer is positioned at lower floor, and silicon nitride layer is positioned at upper strata, is made the mask of etch front silicon nitride by photoetching, etching oxidation silicon, will the silicon face of corrosion be needed to expose, utilizes KOH to corrode the silicon of certain depth;
Adopt physical vapor deposition at reeded grown above silicon one deck sacrifice layer Al; Deposit one deck Parylene on Al;
Stripping technology is adopted to prepare the electrode points and lead-in wire that material is titanium/gold/platinum, and deposit second layer Parylene thereon;
The processing step such as photoetching, plating is utilized to prepare lock ring and ratchet;
By photoetching, etching etc., electrode points is exposed, and etching obtains the opening of lock ring and the profile of electrode further.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (8)
1. one kind has the Kraft electrode of garland structure, comprise rectangular belt (1), stretchable garland structure (2), lead-in wire (3), electrode points (4), ratchet (5), lock ring (7), shackle openings (6) and lead-in wire node (8), described garland structure (2) is arranged on the centre of rectangular belt (1), and is connected to rectangular belt (1); Lead-in wire (3) and electrode points (4) are in the same sides of garland structure (2).
2. have the Kraft electrode of garland structure as claimed in claim 1, wherein, described rectangular belt (1) and garland structure (2) are made up of same material, and this material is the thin polymer film with bio-compatibility.
3. have the Kraft electrode of garland structure as claimed in claim 1, wherein, described lead-in wire (3) and electrode points (4) are also made up of same material, and this material has electric conductivity.
4. there is the Kraft electrode of garland structure as claimed in claim 6, wherein, the angle between the both sides of this wave garland structure is 10 ~ 170 °, and the angle between the both sides of this rhombus garland structure is 10 ~ 170 °, meanwhile, there is intensity enhancing structure in junction, each limit.
5. have the Kraft electrode of garland structure as claimed in claim 1, wherein, described electrode points (4) is three-dimensional bulge-structure, higher than rectangular belt (1).
6. there is the Kraft electrode of garland structure as claimed in claim 1, wherein, described ratchet (5) is present in the both sides of rectangular belt in two separate ranks, and every string can have multiple, and the distance of distance ratchet opening (6) can be arranged to the girth of circle corresponding to different fixed diameter.
7. have the Kraft electrode of garland structure as claimed in claim 1, wherein, described ratchet (5) and lock ring (7) are made up of same material, and this material can be the metallic nickel obtained by electroplating.
8. there is a manufacture method for the Kraft electrode of garland structure, comprise the following steps:
In grown above silicon silicon oxide/nitride layer, wherein silicon oxide layer is positioned at lower floor, and silicon nitride layer is positioned at upper strata, is made the mask of etch front silicon nitride by photoetching, etching oxidation silicon, will the silicon face of corrosion be needed to expose, utilizes KOH to corrode the silicon of certain depth;
Adopt physical vapor deposition at reeded grown above silicon one deck sacrifice layer A1; Deposit one deck Parylene on A1;
Stripping technology is adopted to prepare the electrode points and lead-in wire that material is titanium/gold/platinum, and deposit second layer Parylene thereon;
The processing step such as photoetching, plating is utilized to prepare lock ring and ratchet;
By photoetching, etching etc., electrode points is exposed, and etching obtains the opening of lock ring and the profile of electrode further.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510142082.8A CN104784816B (en) | 2015-03-27 | 2015-03-27 | Cuff electrode having garland structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510142082.8A CN104784816B (en) | 2015-03-27 | 2015-03-27 | Cuff electrode having garland structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104784816A true CN104784816A (en) | 2015-07-22 |
| CN104784816B CN104784816B (en) | 2017-05-24 |
Family
ID=53550287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510142082.8A Expired - Fee Related CN104784816B (en) | 2015-03-27 | 2015-03-27 | Cuff electrode having garland structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104784816B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106621035A (en) * | 2016-12-09 | 2017-05-10 | 北京品驰医疗设备有限公司 | Directional brain deep electrode capable of suppressing parasitic capacitance |
| CN112472096A (en) * | 2020-12-11 | 2021-03-12 | 西北工业大学 | Stress-induced self-curling reticular cuff nerve electrode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1070832A (en) * | 1992-09-12 | 1993-04-14 | 刘昌豪 | Mieroelectronic body-building belt |
| US5324322A (en) * | 1992-04-20 | 1994-06-28 | Case Western Reserve University | Thin film implantable electrode and method of manufacture |
| CN103736204A (en) * | 2014-01-20 | 2014-04-23 | 北京大学 | Implanted cuff neural electrode and manufacturing method thereof |
| CN103736202A (en) * | 2014-01-07 | 2014-04-23 | 上海交通大学 | Preparing method of ring-shaped Kraft microelectrode based on self-stress bending |
-
2015
- 2015-03-27 CN CN201510142082.8A patent/CN104784816B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5324322A (en) * | 1992-04-20 | 1994-06-28 | Case Western Reserve University | Thin film implantable electrode and method of manufacture |
| CN1070832A (en) * | 1992-09-12 | 1993-04-14 | 刘昌豪 | Mieroelectronic body-building belt |
| CN103736202A (en) * | 2014-01-07 | 2014-04-23 | 上海交通大学 | Preparing method of ring-shaped Kraft microelectrode based on self-stress bending |
| CN103736204A (en) * | 2014-01-20 | 2014-04-23 | 北京大学 | Implanted cuff neural electrode and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106621035A (en) * | 2016-12-09 | 2017-05-10 | 北京品驰医疗设备有限公司 | Directional brain deep electrode capable of suppressing parasitic capacitance |
| CN106621035B (en) * | 2016-12-09 | 2023-05-26 | 北京品驰医疗设备有限公司 | Directional deep brain electrode with parasitic capacitance suppression function |
| CN112472096A (en) * | 2020-12-11 | 2021-03-12 | 西北工业大学 | Stress-induced self-curling reticular cuff nerve electrode and preparation method thereof |
| CN112472096B (en) * | 2020-12-11 | 2024-03-19 | 西北工业大学 | Stress-induced self-curling reticular kappa neural electrode and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104784816B (en) | 2017-05-24 |
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Granted publication date: 20170524 |
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