CN104685622A - Bva中介结构 - Google Patents

Bva中介结构 Download PDF

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Publication number
CN104685622A
CN104685622A CN201380051572.6A CN201380051572A CN104685622A CN 104685622 A CN104685622 A CN 104685622A CN 201380051572 A CN201380051572 A CN 201380051572A CN 104685622 A CN104685622 A CN 104685622A
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Prior art keywords
agent structure
intermediary agent
contact
wiring bonding
electrically connected
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CN201380051572.6A
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CN104685622B (zh
Inventor
T·卡斯基
I·莫哈梅德
C·E·尤佐
C·沃伊奇克
M·纽曼
P·莫纳德吉米
R·科
E·乔
B·哈巴
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Vertical Circuits Inc
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Vertical Circuits Inc
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    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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Abstract

一种用于制作中介结构的方法，包括形成键合到第一元件的一个或者多个第一表面的多个接线键合。形成与接线键合的边界表面接触的电介质包封体，该包封体使得相邻的接线键合相互分离。进一步处理包括去除第一元件的至少部分，其中中介结构具有至少通过包封体而相互分离的相对的第一侧和第二侧，并且中介结构具有分别在相对的第一侧和第二侧的分别用于与第一部件和第二部件电连接的第一接触和第二接触，第一接触通过接线键合而与第二接触电连接。

Description

BVA中介结构
有关申请的交叉引用
本申请要求对提交于2012年8月3日的第61/679,653号美国临时申请的提交日的权益，其公开内容通过引用而结合于此。
技术领域
本申请涉及：一种中介结构(interposer)，比如可以结合到可以包括未封装的(unpackaged)半导体裸片或封装的(packaged)半导体裸片的微电子组件中的中介结构；以及用于制作这样的中介结构的方法。具体而言，这里描述一种中介结构以及制作一种中介结构的方法，该中介结构结合有键合过孔(via)阵列，例如具有在包封体(encapsulation)，比如模制的包封体的主表面未覆盖的末端的竖直地延伸接线键合阵列。
背景技术
微电子器件，比如半导体芯片，通常需要至其它电子部件的许多输入和输出连接。半导体芯片或其它类似的(comparable)器件的输入和输出接触，通常被布置为基本上覆盖器件表面的网格状图案(grid-like pattern)(常称为“面积阵列(area array)”)，或者可以被布置为与器件正表面的每个边界平行且相邻地延伸的细长的行，或者被布置在正表面的中心。通常，器件，比如芯片，必须被物理地装配在衬底上，比如印刷电路板上，并且该器件的接触必须电连接到电路板的电传导特征。
半导体芯片通常被设置在封装体(package)中，封装体有助于在制造期间、以及在将芯片装配到外部衬底比如电路板或其它电路面板上期间，操纵半导体芯片。例如，许多半导体芯片被设置在适合用于表面装配的封装体中。该一般类型的许多封装体已经被提出用于各种应用。最常见地，这样的封装体包括常称为“芯片载体”的电介质元件，该电介质元件具有在电介质上形成为镀制或蚀刻的金属结构的端子。这些端子通常通过特征连接到芯片本身的接触，该特征比如是沿着芯片载体本身延伸的细迹线、以及在芯片的接触与端子或迹线之间延伸的细引线或者接线。在表面装配操作中，封装体被放置到电路板上，从而封装体上的每个端子与电路板上的对应接触焊盘对准。在端子与接触焊盘之间提供焊料或者其它键合材料。可以通过加热组件以便使焊料熔化或者“回流”、或者以别的方式来激活焊接材料，来将封装体永久地键合到适当的位置。
许多封装体包括焊球形式的焊料物质，其附着到封装体的端子、直径通常为约0.1mm和约0.8mm(5和30密尔)。具有从其底表面突出的焊球阵列的封装体常称为焊球网格阵列或者“BGA”封装体。称为焊区(land)网格阵列或“LGA”封装体的其它封装体，通过由焊料形成的薄层或者焊区而被固着到衬底。这一类型的封装体可以很紧凑。常称为“芯片比例封装体(chip scale package)”的特定封装体，占用的电路板面积与在该封装体中结合的器件面积相等、或者仅略微地大于该器件面积。其优点在于：它减少了组件的总尺寸，并且允许在衬底上的各种器件之间使用短互连，这又限制在器件之间的信号传播时间，因此有助于组件在高速操作。
可以提供中介结构，作为如下互连元件：其具有接触；并且其顶表面和底表面，在其顶表面或底表面中的一个处，与一个或者多个封装或者未封装的半导体管芯电连接，并且在其顶表面或底表面中的另一处，与另一部件电连接。该另一部件在一些情况下可以是封装体衬底，该封装体衬底又可以与又一部件电连接，该又一可以是电路面板或者可以包括电路面板。
尽管有本领域中有所有以上描述的进展，但是仍然期望对中介结构和制作中介结构的方法进行进一步的改进。
发明内容
根据本发明的一个方面，提供一种用于制作中介结构的方法。根据这样的方面，可以形成具有第一末端(extremity)的多个接线键合。第一末端可以包括键合到第一元件的一个或者多个表面的基部(base)。接线键合可以包括与第一末端相对的第二末端。接线键合可以具有在第一末端与第二末端之间延伸的边界表面(edgesurface)。根据这样的方面，电介质包封体可以接触边界表面，并且使得相邻的接线键合相互分离。
然后可以在进一步处理期间，去除第一元件的至少部分。在进一步处理之后，可以提供具有至少通过包封体相互分离的第一和第二相对侧的中介结构。中介结构可以具有分别在第一和第二相对侧的第一接触和第二接触，用于分别与第一和第二部件连接。中介结构的第一接触可以通过接线键合与第二接触电连接。
在一些方面中，第一元件可以包括具有上述一个或者多个表面的金属层。在这样的方面中，可以在去除第一元件的该部分期间，部分地去除金属层，从而基部保持键合到金属层的在去除第一元件的该部分之后仍保持的第二部分。
在一些方面中，可以在去除金属层之后图案化金属，以形成在部分去除金属层期间、至少通过包封体层的部分而相互绝缘的第一传导元件。在这样的方面中，接线键合中的至少一些的基部可以保持键合到第一传导元件。
在一些方面中，第一元件可以包括具有一个或者多个表面的金属层。在这样的方面中，可以在去除第一元件的部分期间完全地去除金属层，以便暴露基部的至少部分。
在一些方面中，第一元件可以包括具有一个或者多个表面的金属层。在这样的方面中，可以在去除第一元件的部分期间，对包封体进行在包封体的表面处的研磨(grinding)、磨平(lapping)或者抛光(polishing)。
在一些方面中，接线键合的基部的至少部分在中介结构的第一侧或第二侧中的一侧处，作为第一接触或者第二接触。
在一些方面中，接线键合的第一末端和第二末端中的至少一个的除了基部之外的至少部分在中介结构的第一侧和第二侧中的至少一侧处，作为第一接触和第二接触中的至少一个接触。
在一些方面中，可以形成将接线键合的第一末端与第一接触电连接的电传导结构。
在一些方面中，可以形成覆盖在包封体上面的电介质层。在这样的方面中，电介质层的表面可以在中介结构的第一侧。在这样的方面中，可以形成沿着电介质层延伸的电传导结构。
在一些方面中，至少一些第一接触中的每个第一接触可以从其可以电连接到的接线键合的第一末端偏移。在这样的方面中，传导结构可以至少具有部分在横向方向上在第一接触与连接到第一接触的接线键合之间延伸。
在一些方面中，可以形成将接线键合的第二端与第二接触电连接的电传导结构。
在这样的方面中，可以形成覆盖在包封体上面的电介质层。在这样的方面中，电介质层的表面可以在中介结构的第一侧。在这样的方面中，可以形成沿着电介质层延伸的电传导结构。
在这样的方面中，至少一些第二接触中的每个第二接触可以从其可以电连接到的接线键合的第二末端偏移。在这样的方面中，可以形成至少部分在横向方向上在第二接触与连接到第二接触的接线键合之间延伸的传导结构。
在一些方面中，可以形成将接线键合的第二末端与第二接触电连接的电传导结构。
在一些方面中，可以形成覆盖在包封体上面的电介质层。在这样的方面中，电介质层的表面可以在中介结构的第一侧。在这样的方面中，可以形成沿着电介质层延伸的电传导结构。
在一些方面中，至少一些第二接触中的每个第二接触可以从它可以电连接到的接线键合的第二末端偏移。在这样的方面中，传导结构可以至少具有部分在横向方向上在第二接触与连接到第二接触的接线键合之间延伸。
在一些方面中，接线键合的第二末端中的至少一些第二末端可以从接线键合的它们的相应的第一末端在与第二表面平行的至少一个横向方向上移位。
在一些方面中，基部可以布置为可以具有第一最小节距的第一图案。在这样的方面中，接线键合的未封装的部分可以布置为具有大于第一最小节距的第二最小节距的图案。
在一些方面中，基部可以布置为可以在具有第一最小节距的第一图案中。在这样的方面中，接线键合的未封装的部分可以布置为可以在具有小于第一最小节距的第二最小节距的图案中。
在一些方面中，接线键合的基部可以是球形焊接的形式。
在一些方面中，可以在有选择去除传导层的部分期间形成第一传导元件，作为未与第一元件中的其它元件电连接的接线键合的基部电所连接到的接触焊盘。
在一些方面中，通过研磨或者抛光来减薄第一元件。
在一些方面中，可以形成具有初始厚度的包封体层，使得接线键合的端表面基本上被覆盖。在这样的方面中，可以在减薄第一元件期间去除包封体层的部分，从而端表面未被包封体层包封体。
在一些方面中，可以在形成包封体层与第一元件和接线键合的至少边界表面接触期间，模制包封体剂。
在一些方面中，金属层可以具有小于20微米的厚度。
在一些方面中，电介质包封体可以具有第一和第二相对朝向表面。在这样的方面中，中介结构可以具有在第一与第二相对朝向侧之间延伸的贯穿的开口。开口可以被设定尺度以容纳微电子元件的整个主表面。
在一些方面中，中介结构可以具有在第一侧与第二侧之间延伸的至少一个外围边界表面。在这样的方面中，接线键合可以设置于包封体的在贯穿的开口与至少一个外围边界表面之间的部分内。
在一些方面中，一个或者多个外围边界表面可以由第一和第二相对朝向外面以及与第一和第二相对朝向的外表面中的每个外表面相交的第三和第四相对朝向外面限定。在这样的方面中，贯穿的开口可以由第一和第二相对朝向内面以及与第一和第二相对朝向内面中的每个内面相交的第三和第四相对朝向内面限定。
根据本发明的一个方面，提供一种中介结构。中介结构可以包括可以具有第一和第二相对朝向表面的电介质包封体。中介结构还可以包括各自通过包封体相互分离的多个接线键合。接线键合中的每个接线键合可以具有分别在第一和第二表面未被包封体完全地覆盖的第一和第二相对末端。接线键合中的每个接线键合可以具有包封体可以接触的并且可以通过包封体从相邻接线键合的边界表面分离的在第一末端与第二末端之间的边界表面。每个接线键合的末端中的至少一个末端可以是这样的接线键合的基部。
中介结构可以具有第一和第二相对侧。中介结构还可以具有分别在第一和第二相对侧的用于分别与第一和第二部件电连接的第一接触和第二接触。第一接触可以通过接线键合与第二接触电连接。
在一些方面中，接线键合的基部的至少部分可以在中介结构的第一侧或者第二侧之一处，作为第一接触或者第二接触。
在一些方面中，接线键合的第一末端或者第二末端中的至少一个末端的除了基部之外的至少部分可以在中介结构的第一侧或者第二侧中的至少一侧，作为第一接触或者第二接触中的至少一个接触。
在一些方面中，电介质层可以覆盖在包封体的第一表面上面。在这样的方面中，电介质层可以具有暴露的表面。在这样的方面中，中介结构还可以包括将接线键合的第一末端与第一接触电连接的传导结构。
在一些方面中，至少一些第一接触中的每个第一接触可以从它可以电连接到的接线键合的第一末端偏移。在这样的方面中，传导结构可以具有至少部分如下，该至少部分在横向方向上在第一接触与连接到第一接触的接线键合之间延伸。
在一些方面中，电介质层可以覆盖在包封体的第二表面上面。在这样的方面中，电介质层可以具有暴露的表面。在这样的方面中，中介结构还可以包括将接线键合的第二末端与第二接触电连接的传导结构。
在一些方面中，至少一些第二接触中的每个第二接触可以从它可以电连接到的接线键合的第二末端偏移。在这样的方面中，传导结构可以具有至少部分如下，该至少部分在横向方向上在第二接触与连接到第二接触的接线键合之间延伸。
在一些方面中，第二电介质层可以覆盖在包封体的第二表面上面。在这样的方面中，第二电介质层可以具有暴露的表面。在这样的方面中，中介结构还可以包括将接线键合的第二末端与第二接触电连接的传导结构。
在这样的方面中，至少一些第二接触中的每个第二接触可以从它可以电连接到的接线键合的第二末端偏移。在这样的情况下，传导结构可以具有至少部分如下，该至少部分在横向方向上在第二接触与连接到第二接触的接线键合之间延伸。
在一些方面中，接线键合的第二末端中的至少一些第二末端可以在与第二表面平行的至少一个横向方向上从接线键合的与该第二末端相应第一末端移位。
在一些方面中，可以提供一种微电子组件。微电子组件可以包括根据本发明的一个或者多个方面的中介结构。微电子组件还可以包括可以具有与第一接触电连接的第一部件接触的第一部件。微电子组件还可以包括第二部件。第二部件可以具有面、以及在该面上的朝向第二接触并且与第二接触电连接的多个第二部件接触。
在一些方面中，第二部件可以是微电子元件。在这样的方面中，第二部件接触可以是在微电子元件的上述面处的元件接触。
在一些方面中，微电子元件可以是第一微电子元件。在这样的方面中，微电子元件还可以包括第二微电子元件。第二微电子元件可以具有面、以及在该面上的朝向第二接触并且与第二接触电连接的多个第二元件接触。
在其中提供微电子组件的一些方面中，中介结构还可以包括在中介结构上的电传导结构。电传导结构可以在与第一侧和第二侧平行的横向方向上延伸。第一元件接触中的至少一些第一元件接触可以通过该结构与第二元件接触中的至少一些第二元件接触电连接。
在其中提供了一种微电子组件的一些方面中，中介结构在第一侧与第二侧之间的厚度可以小于一毫米。
在一些方面中，第一部件可以是电路面板。
在一些方面中，电路面板的接触可以朝向第一接触。这样的接触可以用电传导键合材料键合到第一接触。
在一些方面中，电传导键合材料可以包括至少一个可回流键合材料。
在一些方面中，第二部件可以是微电子封装体。在这样的方面中，第二部件接触可以是在微电子封装体的面处的多个端子。在这样的方面中，微电子封装体可以包括微电子元件，微电子元件在微电子元件的面上具有与第二部件接触电连接的多个元件接触。
在一些方面中，可以提供一种包括微电子组件和与微电子组件电连接的一个或者多个第三部件的系统。
根据本发明的一个方面，提供一种中介结构。中介结构可以包括可以具有第一和第二相对朝向表面的电介质包封体。电介质包封体可以具有可以在第一与第二相对朝向表面之间延伸的贯穿的开口。开口可以被设定尺度以容纳微电子元件的整个主表面。
中介结构还可以包括用于与第一和第二部件电连接的多个接线键合。接线键合可以通过包封体相互分离。接线键合中的每个接线键合可以具有分别在第一和第二相对朝向表面中的至少一个表面处未被包封体完全地覆盖的第一和第二相对末端。接线键合中的每个接线键合还可以具有被包封体接触的在第一末端与第二末端之间的边界表面。接线键合中的每个接线键合可以通过包封体从相邻接线键合的边界表面分离。
在一些方面中，中介结构可以包括分别至少被电介质包封体的第一和第二相对朝向表面相互分离的第一和第二相对朝向侧。
在一些方面中，中介结构可以包括分别在第一和第二相对侧的用于分别与第一和第二部件电连接的第一和第二接触。第一接触可以通过接线键合与第二接触电连接。
在一些方面中，中介结构可以包括至少一个传导结构。传导结构中的至少一些传导结构可以具有至少部分如下，该至少部分可以在横向方向上从多个接线键合的多个第一末端中的一个第一末端延伸并且可以将该一个末端电连接到第一接触中的对应的一个第一接触。在这样的方面中，第一接触中的该一个对应第一接触可以从多个第一末端中的该一个第一末端偏移。
在一些方面中，中介结构可以包括至少第二传导结构。第二传导结构可以包括至少部分如下，该至少部分可以在横向方向上从多个接线键合的多个第二末端中的一个第二末端延伸并且可以将该一个末端电连接到第二接触中的对应的一个第二接触。在这样的方面中，第二接触中的该一个对应第二接触可以从多个第二末端中的该二个第一末端偏移。
在一些方面中，中介结构的在第一与第二相对朝向侧之间的厚度可以小于一毫米。
在一些方面中，可以提供一种堆叠的微电子组件。堆叠的微电子组件可以包括根据本发明的一个或者多个方面的用于与第一和第二部件电连接的中介结构。在这样的方面中，第一部件可以是第一微电子封装体。微电子封装体可以包括多个第一端子。在这样的情况下，第二部件可以是第二微电子封装体。第二微电子封装体可以包括多个第二端子。第二微电子封装体可以通过中介结构与第一微电子封装体电连接。
第一微电子封装体可以包括朝向中介结构的第一侧的表面。第二微电子封装体可以包括朝向中介结构的第二侧的表面。第一微电子封装体的相应多个第一端子中的至少一些第一端子可以与中介结构的多个接线键合的对应第一末端电连接。第二微电子封装体的相应多个第二端子中的至少一些第二端子可以与中介结构的多个接线键合的对应第二末端电连接。
在一些方面中，第一微电子封装体可以包括第一微电子元件。可以在贯穿的开口内容纳第一微电子元件的主表面。第一微电子元件可以包括通过中介结构电连接到第二微电子封装体的第一元件。
在一些方面中，第二微电子封装体可以包括第二微电子元件。第二微电子元件可以包括通过中介结构电连接到第一微电子封装体的第二元件接触。
在一些方面中，第一元件接触可以通过覆盖在再分布层上面并且/或者至少部分地嵌入在再分布层内的多个第一传导元件而电连接到中介结构。再分布结构可以包括覆盖在中介结构的电介质包封体上面的再分布电介质层，并且可以包括通过再分布电介质层的多个第二传导元件。
在这样的方面中，第一元件接触可以电连接到在再分布结构的相对侧上的接合元件。
在一些方面中，贯穿的开口可以填充有包封体，以将中介结构相对于第一微电子元件的位置固定。
在一些方面中，第一微电子封装体可以是电路面板。
根据本发明的一个方面，提供一种形成堆叠的微电子组件的方法。根据这样的方面，可以将第一部件放置为朝向中介结构的第一侧。多个第一端子可以在第一部件上。中介结构可以具有朝向与第一侧相对的方向的第二侧。中介结构的第一侧和第二侧可以分别通过电介质包封体的至少第一和第二相对朝向表面分离。
中介结构可以包括在第一与第二相对朝向侧之间延伸的贯穿的开口。开口可以被设定尺度以容纳微电子元件的整个主表面。中介结构可以包括用于与第一和第二部件电连接的多个接线键合。接线键合可以通过包封体相互分离。接线键合中的每个接线键合可以具有分别在第一和第二相对朝向表面中的至少一个表面处至少未被包封体完全地覆盖的第一和第二相对末端。接线键合中的每个接线键合可以具有包封体可以接触的并且可以通过包封体与相邻接线键合的边界表面分离的在第一末端与第二末端之间的边界表面。
中介结构的至少一些接线键合的第一末端可以连接到第一部件上的多个第一端子中的至少一些第一端子。
第二部件可以被放置为朝向中介结构的第二侧。多个第二端子可以在第二部件上。
第二部件可以连接到多个接线键合中的至少一些接线键合的第二末端。
在一些方面中，第一部件可以是第一微电子封装体。多个第一端子可以定位为沿着微电子封装体的第一连接表面。多个接线键合中的至少一些接线键合的第一末端可以物理连接到第一微电子封装体的多个第一端子中的至少一些第一端子。
在一些方面中，第二部件可以是第二微电子封装体。第二微电子封装体可以具有沿着第二微电子封装体的第二连接表面的传导层。多个第二端子可以定位为沿着第二微电子封装体的第三连接表面。在这样的方面中，多个接线键合中的至少一些接线键合的第二末端可以在第二微电子封装体的传导层处物理地连接到第二微电子封装体。
在一些方面中，中介结构可以包括分别在第一和第二相对侧的第一和第二接触。第一接触可以通过接线键合与第二接触电连接。在这样的方面中，可以形成至少一个传导结构。一个或者多个传导结构可以具有至少部分如下，该至少部分可以在横向方向上从多个接线键合的多个第一末端中的一个第一末端延伸并且可以将该一个第一末端电连接到第一接触中的对应的一个第一接触。第一接触中的该对应的一个第一接触可以从这样的多个第一末端偏移。
在这样的方面中，可以形成至少第二传导结构。第二传导结构可以具有至少部分如下，该至少部分在横向方向上从多个接线键合的多个第二末端中的一个第二末端延伸并且可以将该一个第二末端电连接到第二接触中的对应的一个第二接触。第二接触中的该对应的一个第二接触可以从多个第二末端中的该一个第二末端偏移。
在一些方面中，第一微电子封装体可以包括第一微电子元件。在这样的方面中，第一微电子元件可以装配于第一部件的在中介结构的贯穿的开口内暴露的部分上。
在一些方面中，可以将第一微电子元件减薄至不大于中介结构的厚度的预定厚度。
在这样的方面中，将第一微电子元件减薄可以在置入到中介结构之前或者之后执行。
在一些方面中，第一微电子封装体的第一连接表面可以与中介结构的第一表面邻接，从而第一连接表面与中介结构紧靠地齐平。
附图说明
图1是根据本发明的一个实施例的包括中介结构的微电子组件的截面图。
图2是根据本发明的一个实施例的包括中介结构的微电子组件的截面图。
图3是根据本发明的一个实施例的中介结构的截面图。
图4是根据本发明的一个实施例的中介结构的平面图。
图5-图10是根据本发明的实施例的通过比如针脚式键合(stitchbonding)、楔形键合(wedge bonding)或者球形键合等技术，而形成的用于在中介结构中使用的各种接线键合布置的截面图。
图11和图12是接线键合顶端布置的平面图。
图13和图14是根据本发明的实施例的接线键合布置的截面图。
图15-图17是图示根据本发明的实施例的可以对中介结构执行的各种类型的处理的结果的截面图。
图18-图20是根据本发明的实施例的具有可以在中介结构的包封体的表面以上暴露的电介质层的中介结构的截面图。
图21和图22是根据本发明的一个实施例的中介结构的截面图和平面图。
图23和图24是根据本发明的一个实施例的中介结构的截面图和平面图。
图25和图26是根据本发明的一个实施例的包括图23和图24的中介结构的布置的微电子组件的截面图。
图27和图28是根据本发明的一个实施例的微电子组件的包括图23和图24的中介结构的布置的部分的截面图和平面图。
具体实施方式
现在参照各附图，其中相似标号用来指示相似特征，在图1中示出根据本发明的一个实施例的微电子组件100。图1的实施例是包括中介结构10的微电子组件，中介结构具有第一和第二相对朝向的侧144、114，例如顶表面和底表面，在其处分别设置有第一和第二接触46、16，用于分别与微电子组件的第一和第二部件电连接。这里描述的部件，比如中介结构、衬底、电路面板、微电子元件等在其外表面处具有电介质结构。因而，如在本公开中所用，关于电传导元件“在”部件的电介质结构的表面的陈述，指示在部件未与任何其它元件组装时，电传导元件可用于，与在与部件的表面垂直的方向上从部件外部朝着部件的表面移动的理论点接触。因此，在部件表面的端子或其它传导元件可以从这样的表面突出；可以与这样的表面齐平；或者可以相对于这样的表面而在部件中的孔或者下陷中凹陷。
如图1中所示，第一部件例如可以是在其上具有有源电路元件的部件，该有源电路元件比如是微电子元件的部件或者其它部件。微电子元件可以是封装或者未封装的半导体裸片，半导体裸片具有朝向中介结构10的第一侧144的面13，并且被封装或者未被封装为连接到中介结构的第一接触46。如图1中进一步所示，中介结构的第二接触16与组件的另一部件的对应接触电连接，另一部件可以是如图1中所示示例中的封装体衬底20。通过接线键合32，提供在第一与第二接触46、16之间的电连接，接线键合相互分离，并且在第一和第二相对朝向的侧144、114之间在中介结构的厚度方向上延伸。
作为图1中所示布置的备选或者除了该布置之外，第二接触16中的一些或者所有可以与具有与中介结构的第二侧114相向的表面的第二未封装或者封装的半导体裸片连接。
与中介结构10互连的封装体衬底20或另一部件又可以装配到电路面板50的接触52，如图1中所示。
图2图示根据又一示例的微电子组件102，其中第一和第二微电子元件12、52可以通过在中介结构11的第一侧144的第一接触46与中介结构11互连。可以是封装或者未封装的半导体裸片，可以通过在中介结构上提供的传导结构，比如在其上的迹线54，相互电连接，该传导结构可以在与中介结构的第一和第二侧144、114平行的方向上延伸。
参照图3，示出截面图，截面图进一步示出可以结合在比如图1或者图2中所示微电子组件中的中介结构10；并且图4是朝向中介结构的包封体19的顶表面44或者备选地朝向包封体19的底表面14查看的对应平面图。如图3和4中所见，可以使第一和第二接触46、16在与顶表面或者底表面44、14平行的横向方向上延伸超出相应接线键合32的边界表面37，如在接触46A和16A的情况下所见。通常由电介质材料制成的绝缘包封体19可以通过向模具中注入包封体剂材料来设置，该模具至少部分地包围如下结构，该结构具有键合到其一个或者多个表面的接线键合32，在这一情况下，如这里所用，包封体是“模制的包封体”。如例如在共同地拥有的第13/462,158、13/404,408、13/404,458、13/563,085、13/477,532和13/405,125号美国专利申请中所描述，接线键合32可以通过将接线键合到一个或者多个表面，比如接触的表面、或者片例如金属片的表面，来形成。如图3中最佳地所示，在一些情况下，迹线54、54A可以覆盖在包封体19的相对朝向的顶表面和底表面44、14中的一个或二者，或者可以嵌入于覆盖在包封体的这样的表面中的一个或两者的一个或者多个电介质层内，例如如图20中进一步所见。再次参照图2，包括在一些情况下可以如图所示竖直地堆叠和电互连的多个半导体裸片的组件，可以通过第一接触46与中介结构11电互连，并且还可以通过迹线来与微电子组件的另一裸片12或者封装的裸片电互连。
再次参照图3，通常通过将金属接线在一个或者多个表面的不同位置处键合到一个或者多个表面、来形成金属键合，来形成在包封体19的第一与第二表面44和14之间在延伸经过包封体19的方向上提供电互连的接线键合32，上述不同位置可以是阵列的位置，并且可以是在以下布置的金属层的表面。每个接线键合具有限定接线键合的一端的第一末端33以及限定与第一端相对的第二端的第二末端39。接线键合通常具有在每个接线键合的第一与第二末端之间延伸的圆柱形柱身以及在第一与第二末端之间的方向上延伸的边界表面37。
在具体示例中，键合工具可以将金属接线键合到分层结构的暴露表面，该分层结构包括未图案化或者图案化的金属片，并且可以在其上包括一个或者多个表面末层(finish)金属层。因此，在一个示例中，接线键合可以形成于具有铝、铜或者其合金等金属层的基部上，并且抛光层在一个示例中可以包括“ENIG”表面末层，比如通过无电镀沉积而在基部金属上沉积的镍层、接续的通过浸没工艺而在镍层上沉积的金层。在另一示例中，基部金属层可以具有“ENEPIG”表面末层，比如可以是在基部金属上沉积的无电镀沉积的镍层、接续的在其上沉积的无电镀沉积的钯层、和接续的通过浸没工艺在钯上沉积的金层的组合。
可以通过如在前述共同地拥有和结合的美国专利申请中的一份或者多份中所描述的技术、来将金属接线键合到表面，来形成接线键合。如这里所用，接线键合的“基部”34意味着接线键合的除了接线键合的通常为圆柱形的柱身之外的部分，该部分得自将金属接线的这样的部分键合到表面。基部34可以通过如下方式形成：将金属接线球形键合到表面，比如通过在接线的顶端加热接线以形成熔化的金属球、并且使表面与该球接触以形成球形键合以便形成接线的球根状部分作为基部34，例如如图3中所示。在这样的示例中，在接线键合的基部通过球形键合而形成的情况下，基部可以具有与球或者球的部分相似的形状。具有通过球形键合而形成的基部的接线键合可以具有如例如在通过引用而将公开内容结合于此的第13/462,158号美国专利申请中所描述的形状和形成方法。
备选地，如图5、6、7或者8中所见，可以通过其它技术比如针脚式键合或者楔形键合来形成基部35，其中接线的边界表面的部分键合到表面比如接触16、46。在这样的布置中，基部35可以具有以明显的角度(例如15至90度)从柱身延伸离开的、有些平坦化的圆柱形形状。具有通过针脚式或楔形键合而形成的基部的接线键合，可以具有大体上如图5、6、7和8中所见形状，并且可以如例如在通过引用而将公开内容结合于此的第13/404,408、13/404,458、13/405,125号美国专利申请中所描述而形成。接线键合的向上延伸柱身部分33无需相对于键合的基部35竖直地延伸，而是实际上可以以明显的角度(例如15至90度)从其延伸。这一方式形成的接线键合的具体示例可以如在这些结合的申请中所描述。
在示出球形键合到表面的基部的图9和图10的示例中，顶端38和38A可以随着它从接线键合的圆柱形柱身31延伸而变细。具体而言，如图9中所示，顶端38可以距离基部34更远而更窄。如图10中所示，顶端38A可以更远地从基部34的竖直柱身31弯曲离开。如图10中进一步所示，距离基部34甚至更远，然后顶端38A可以与顶端38相似地变细。
如图11和图12中所示，接线键合的顶端41、41A可以具有特定形状。在图11的示例中，顶端41可以从接线键合的圆柱形柱身31延伸，并且可以在一个维度中变细。在这样的示例中，顶端41可以在一个维度中变平坦，这可以有助于键合到另一平坦表面。在图12的示例中，顶端41A可以在多于一个维度中变细成更窄的轮廓。在这样的情况下，顶端41A可以形状为平截头圆锥体(frusto-conical)或者可以具有平坦化的平截头圆锥体轮廓。
在一些示例中，在通过针脚式键合、楔形键合或者球形键合中的任何键合来形成基部的情况下，接线键合柱身的与基部相邻的部分可以在不与表面正交的方向上从基部延伸离开，即，使得柱身的该部分在横向方向上从表面延伸离开。
经常地，在切断接线以限定末端之前或之后，通过在接线的末端位置球形焊接或者针脚式或楔形键合接线，来将将金属接线的末端键合到表面。然而，也存在用于在金属接线的除了上述位置之外的位置处将接线键合到表面的技术。例如可以将接线的远离接线末端的部分针脚式键合到表面，同时接线从键合的部分延伸离开、朝向每端延伸。
可以观察到，金属接线在其中具有这样的金属晶粒，其可以在接线的长度方向上伸长，即在相对于接线的大体上圆柱形柱身的直径横向的方向上伸长。在一些示例中，接线可以由金、铝、铜或者铜合金等等制成。在一些情况下，如图8中所见，接线可以包括基础金属的芯、以及与初级金属不同的金属比如例如钯的表面末层，如例如在通过引用而结合于此的美国申请13/404,408和13/404,458中所描述。
如图13中进一步所示，包封体可以在与接线键合的端36相邻的位置处，从其主表面44向下地凹陷，以便提供键合金属可以与接线键合的暴露端接触的更大表面积。备选地或者附加地，接线键合的端36可以延伸到在包封体的表面44上方的高度H。在这样的示例中，包封体可以凹陷或者可以平坦，其中接线键合在表面44的高度以上延伸，图14图示又一示例，如在结合的第13/462,158号申请中所描述，其中包围接线的边界表面的材料78从包封体19的主表面44凹陷以提供沟槽64，在该沟槽中，传导键合材料或者键合金属可以在对中介结构的接线键合进行接合时，即与另一部件的对应电传导特征电连接时，流动。
图15进一步图示可以通过减薄中介结构的后续步骤而形成的中介结构，该步骤比如是在形成包封体19之后被应用于包封体19的表面的例如研磨、磨平或者抛光。在这样的情况下，可以在减薄工艺期间去除接线键合的基部。可以执行这样的技术例如用于去除接线键合的基部，比如在接线键合的相邻基部之间的间距可能比后续的对于接线键合的在中介结构相邻表面14之侧的末端的接合工艺所希望或者适合的间距更近的情况下。
图16图示另一示例，其中基部(例如通过球形键合而形成或者通过针脚式或楔形键合而形成的基部)可以附着到在包封体的表面14的传导元件55，其中传导元件55可以是从接线键合所键合到的金属层的剩余的部分。在这样的情况下，在形成接线键合32之后，可以随后将金属层图案化，例如在形成包封体19之后。这样的用于随后将金属层图案化以形成传导元件55的处理，可以如例如在结合的第13/462,158号申请中所描述。传导元件55可以是中介结构的接触16或者接触46，或者可以是接触16或者接触46耦合到的内部结构，比如关于图18-图20所进一步描述的。
图17图示具体示例，其中接线键合的基部34的至少部分在包封体的主表面14被暴露，作为中介结构的接触，例如其第一或者第二接触。
图18-图20图示又一示例，其中还可以额外地形成具有一个或者多个电介质层的再分布结构21，该再分布结构21在中介结构的第一或者第二侧144、114处覆盖在包封体的主表面44、14中的一个或者多个上面，其中在包封体的这样的表面以上暴露这样的电介质层的表面。该一个或者多个电介质层可以承载可以包括一个或者多个电传导再分布层的电传导结构。包括在与包封体的表面44、14平行的方向上延伸的迹线54的再分布结构21，可以由延伸经过电介质层中的一个或者多个的过孔23内部地电连接。因此，中介结构的接触46可以通过再分布结构21而电连接到接线键合32，并且可以至少由与包封体表面44和/或14平行延伸的接线而经过上述再分布结构连接。图18图示其中包括传导结构和一个或多个电介质层的再分布层设置于在包封体的表面44以上的侧面144的示例。图19图示其中包括传导结构和一个或多个电介质层的再分布结构设置于在表面14以上的侧面114的示例。图20图示其中再分布结构21设置于相应表面44、14中的每一个表面以上的示例。
图21和图22是进一步图示中介结构210的具体示例的截面图和对应平面图，其中接线键合中的至少一些的第二末端239从它们的延伸相应第一末端233、在与包封体的表面44平行的横向方向上偏移，它们从该相应第一末端延伸、并且通过相应的接线键合柱身直接地连接。如图21和图22中进一步所见，接线键合的第二末端可以在其相邻接线键合之间按最小节距例如节距P2间隔，该最小节距与在相邻接线键合232的第一末端之间的原最小节距P1不同。结合的第13/462,158号申请提供了用于制作在包封体的顶表面和底表面具有不同布置并且在包封体表面具有不同最小节距的接线键合的进一步描述，比如其中关于图18和图19所描述。
中介结构或者结合该中介结构的微电子组件的以上描述的实施例可以进一步结合到系统中，比如相对于结合的第13/462,158号申请的图23示出和描述的系统中。
图23和图24提供根据以上描述的示例中的任何示例的中介结构的变化的截面图和俯视图，其中中介结构310具有从中介结构的第一侧144延伸到第二侧114的贯穿开口65。如图24中所示，接线键合32的末端36(或者基部34)可以在第一和第二侧144、114被暴露，或者可以与在中介结构上设置的其它传导结构比如在其上的迹线54、54A电连接，其它传导结构可以在与中介结构310的相应第一和第二侧144、114中的或者二者平行的方向上延伸。如在以上描述的示例(图18-图20)中，迹线54可以覆盖在包封体的相对朝向的表面14、44中的一个或者二者上面，并且可以是再分布结构的部分，或者可以关于表面14、44中的一个或两者来嵌入。
图25是图示微电子组件103的分解图，其中第一和第二微电子封装体71、81可以被组装，并且通过中介结构310相互电互连。微电子包封体71的衬底72可以具有与中介结构310的第一侧144相向的第一表面73。在中介结构的侧114的接触16可以与在电介质元件例如微电子封装体81的衬底82的表面83的对应接触86对准；并且比如通过在接触86或者16的表面处的键合材料或者键合金属例如金、锡、铟、焊料或者共晶材料，来接合到对应接触86。中介结构310的接触46可以与微电子包封体71的对应端子56对准，该对应端子56比如可以例如设置在衬底72的第一表面73处；并且通过附着到端子56的键合材料，比如可以被提供为接合元件58的键合材料，来接合到对应端子56。
如图25以及图26中所示，第一微电子元件75，如图所示“倒装芯片”，可以放置于衬底72的与其第一表面73相对的第二相对朝向表面74。在如图所示倒装芯片布置中，第一微电子元件75具有在微电子元件75的第一元件表面处的用于与在第二表面74的相应接触76连接的多个接触77。在如图25和图26中进一步所示备选“面朝上”布置中，第一微电子元件75可以具有在微电子元件75的与第一元件表面相对的相对朝向第二元件表面处的一个或者多个键合焊盘78，用于通过一个或者多个相应键合接线90(在图25和图26中示出为虚线)来与在第二表面74的相应接触76电互连。在这样的布置中，接触76中的至少一些可以与在衬底72的第一表面73处的接触56中的至少一些电连接。以这一方式，第一微电子元件75可以与接触56中的至少一些电互连。
仍然参照图25和图26，第二微电子封装体81可以包括按“倒装芯片”配置的衬底82和第二微电子元件85，其中第二微电子元件放置于衬底82的第一表面83上并且与第一表面83电互连。如图所示，第二微电子元件85可以具有在微电子元件85的第一元件表面处的一个或者多个凸块87，用于与在第一表面83的相应接触86连接。在备选布置中，第二微电子元件85可以具有在微电子元件85的与第一元件表面相对的相对朝向第二元件表面处的一个或者多个键合焊盘88，用于通过一个或者多个相应键合接线95(在图23中表示为虚线)来与在第一表面83处的相应接触86电互连。通过这样的布置，第二微电子元件85可以与在衬底82的与其第一表面83相对的第二相对朝向表面84处的接触57电互连。
在衬底82在固定定位时，中介结构310然后可以被放置到衬底82上并且接合到衬底82，其中中介结构310的贯穿开口65包围第二微电子元件85。备选地，在中介结构310在固定定位时，衬底82可以与中介结构310紧靠地放置，并且接合到中介结构310，其中第二微电子元件85放置于中介结构310的贯穿开口65内。在以上任一布置中，衬底82的第一表面83可以与中介结构310的第二侧114紧靠地齐平地放置。如对照图23和图24所示，第二微电子元件85可以被减薄到这样的厚度，使得在第二微电子元件85的第一表面83与中介结构310的第二侧114紧靠地齐平地放置时，第二微电子元件85的任何部分都不在中介结构310的第一侧144以上。在微电子组件103的备选布置(未示出)中，第二微电子元件85可以未被减薄，而代之以可以具有如下部分，该部分落在中介结构310的第一侧44以上、并且适配在接合元件58之间、并且上至恰在第一微电子封装体71的衬底72的第一表面73以下的点。在这些布置中的任何布置中，包括第一和第二微电子元件75、85的第一和第二微电子封装体71、81可以通过中介结构310来相互电互连。
第二微电子封装体81的衬底82的第一表面83可以朝向中介结构310的第二侧14。中介结构310可以通过在第一表面83处的接触86与中介结构310的相应接线键合32的基部34之间的连接，来与第二微电子封装体81电互连，其中该基部34可以覆盖在相应接触86上面并且与相应接触86互连。备选地，中介结构310可以包括从接线键合32的相应基部34偏移的接触(未示出)，该基部34可以被定位成朝向在衬底82的第一表面83的相应接触86、并且比如通过键合金属来与相应接触86接合，比如以上针对按“倒装芯片”装配布置的连接所描述的。
第二微电子封装体81可以包括在衬底82的第二表面84的端子59，该端子59通过传导连接(未示出)电互连通过衬底82。可以是焊球以及其它可能结构的接合元件57，可以接合到第二微电子封装体81的端子59，从而第二微电子封装体81可以与其它器件或者子组件电互连，并且从而微电子组件103可以与其它器件或者子组件电互连。
图27和图28图示根据以上描述的示例中的任何示例的微电子组件的备选布置。具体而言，图27是在微电子组件104的中介结构310的贯穿开口65内容纳的第二微电子封装体121的截面图，而图28是平面图。在所示示例中，微电子组件104可以包括微电子组件103的所有特征而，不同之处在于衬底81未形成组件104的部分。
如图所示，可以在中介结构310的第二侧114形成覆盖在包封体的主表面14上面的再分布结构121。再分布结构121可以具有根据图18-图20的示例的结构。如图所示，再分布结构121还可以具有迹线54，该迹线54嵌入在再分布结构121的电介质层内、用于电连接第二微电子元件85与中介结构310。如图所示，迹线54可以在与中介结构310的第二侧114平行的方向上延伸，并且在为“倒装芯片”配置的情况下，将在微电子元件85的第一元件表面处的凸块87电连接到接线键合32的基部34。在一些布置中，接触或者其它传导结构可以覆盖在接线键合32的基部34或者第二微电子元件85的凸块87上面，并且连接到基部34或者凸块87，其可以通过覆盖在再分布结构121的电介质层上面的迹线54连接。
如进一步所示，包封体191可以被添加到贯穿开口65，包封体可以填充贯穿开口65以相对于中介结构310固定第二微电子元件85的定位，如这里进一步描述的。包封体192可以被添加为包围中介结构310以提供用于中介结构310的附加的支撑和刚性。如图27中进一步所示，在一些布置中，第二微电子元件85可以电连接到部件或者接合元件，该部件或者接合元件在中介结构310的第二侧114处通过再分布结构121的过孔23电连接，过孔23从第二微电子元件85的凸块87延伸并且电连接到凸块87。
具体参照图27，在形成多个中介结构310和再分布结构121之前，在一些布置中，中介结构310和第二微电子元件85可以同时、或者按照两种顺序中的任一，放置于临时载体(未示出)上。载体可以是可以由玻璃或者金属材料制成的液态载体。这样的液态载体可以通过使用滚涂工艺、物理气相沉积、或者涂敷该材料的其它已知方法，而形成于平坦表面之上。在将中介结构310和第二微电子元件85放置到载体上之后，可以添加包封体191，以填充在第二微电子元件85与中介结构310的贯穿开口65之间的区域。另外，在一些布置中，可以添加包封体192，以包围中介结构310。
在包封体已经固化或者以别的方式设置之后，可以从载体释放中介结构310、第二微电子元件85、包封体191、和包封体192的组件，同时第二微电子元件85和中介结构310位于相对于彼此的固定定位。在一些布置中，然后可以应用迹线54，以从凸块87到接线键合32的基部34、覆盖在中介结构310的封装体的主表面14和封装体191上面，以将第二微电子元件85电连接到中介结构310。这一整个组件然后可以放置到再分布结构121的电介质层上。在第二微电子元件85的凸块87以及接线键合32的基部34中的任一方或者双方未对准时，迹线54可以在这些传导元件之间延伸，并且将这些传导元件电连接到再分布结构121的相应过孔。
将理解关于本发明的一个方面、实施例、布置或者配置而被示出和被论述的特征，可以与本发明的任何其它方面、实施例、布置或者配置结合地使用。例如虽然特定附图及其对应描述举例说明了竖直的接线键合，但是应理解的是，也可以根据被示出或者被描述的任何实施例来使用其它附图中所示非竖直接线键合。
虽然这里已经参照具体实施例描述本发明，但是应理解的是，这些实施例仅举例说明了本发明的原理和应用。因此应理解的是，可以对示例实施例做出许多修改，并且本申请也考虑到了本文提供的实施例的其它布置和组合。可以在不脱离如在这里描述的实施例中限定的本发明的精神实质和范围的情况下，设计另外的改进例。

Claims (27)

1.一种用于制作中介结构的方法，包括如下步骤：
形成多个接线键合，所述多个接线键合具有：第一末端，包括基部，所述基部键合到第一元件的一个或者多个表面；以及第二末端，与所述第一末端相对；所述接线键合具有在所述第一末端与所述第二末端之间延伸的边界表面；
形成电介质包封体，所述电介质包封体接触所述边界表面，并且使得相邻的接线键合相互分离；以及
然后进行进一步处理，包括去除所述第一元件的至少部分，
其中在所述进一步处理之后，提供了所述中介结构，所述中介结构具有相对的第一侧和第二侧，所述第一侧和所述第二侧通过至少所述包封体而相互分离，并且所述中介结构分别在相对的所述第一侧和所述第二侧处具有第一接触和第二接触，用于分别与第一部件和第二部件连接，所述第一接触通过所述接线键合与所述第二接触电连接。
2.根据权利要求1所述的方法，所述电介质包封体具有相对朝向的第一表面和第二表面，其中所述中介结构具有在相对朝向的所述第一侧与所述第二侧之间延伸的贯穿的开口，所述开口被设定尺寸以容纳微电子元件的整个主表面。
3.根据权利要求2所述的方法，其中所述中介结构具有在所述第一侧与所述第二侧之间延伸的至少一个外围边界表面，并且所述接线键合设置于所述包封体的在所述贯穿的开口与所述至少一个外围边界表面之间的部分内。
4.根据权利要求3所述的方法，其中所述至少一个外围边界表面由相对朝向的第一外面和第二外面以及相对朝向的第三外面和第四外面限定，相对朝向的所述第三外面和所述第四外面与相对朝向的所述第一外面和所述第二外面中的每一个外面相交，并且其中所述贯穿的开口由相对朝向的第一内面和第二内面以及相对朝向的第三内面和第四内面限定，相对朝向的所述第三内面和所述第四内面与相对朝向的所述第一内面和所述第二内面中的每一个内面相交。
5.一种中介结构，包括：
电介质包封体，具有相对朝向的第一表面和第二表面；以及
多个接线键合，每个接线键合通过所述包封体而相互分离，每个接线键合具有：相对的第一末端和第二末端，分别在所述第一表面和所述第二表面处未被所述包封体完全地覆盖；以及在所述第一末端与所述第二末端之间的边界表面，被所述包封体接触，并且通过所述包封体与相邻的接线键合的所述边界表面分离；每个接线键合的所述末端中的至少一个末端是这样的接线键合的基部，
所述中介结构具有：相对的第一侧和第二侧；第一接触和第二接触，分别在相对的所述第一侧和所述第二侧，用于分别与第一部件和第二部件电连接；所述第一接触通过所述接线键合而与所述第二接触电连接。
6.一种中介结构，包括：
电介质包封体，具有相对朝向的第一表面和第二表面，其中所述电介质包封体具有在相对朝向的所述第一表面与所述第二表面之间延伸的贯穿的开口，所述开口被设定尺寸以容纳微电子元件的整个主表面；以及
多个接线键合，用于与第一部件和第二部件电连接，并且通过所述包封体而相互分离，每个接线键合具有：相对的第一末端和第二末端，分别在相对朝向的所述第一表面和所述第二表面中的至少一个表面处至少未被所述包封体完全地覆盖；以及在所述第一末端与所述第二末端之间的边界表面，被所述包封体接触，并且通过所述包封体与相邻的接线键合的边界表面分离。
7.根据权利要求6所述的中介结构，所述中介结构还包括：相对朝向的第一侧和第二侧，分别至少通过所述电介质包封体的相对朝向的所述第一表面和所述第二表面而相互分离。
8.根据权利要求7所述的中介结构，所述中介结构还包括：第一接触和第二接触，分别在相对的所述第一侧和所述第二侧，用于分别与第一部件和第二部件电连接；所述第一接触通过所述接线键合而与所述第二接触电连接。
9.根据权利要求7所述的中介结构，还包括至少一个传导结构，所述至少一个传导结构具有至少部分如下，所述至少部分在横向方向上从所述多个接线键合的所述多个第一末端中的一个第一末端延伸、并且将所述多个第一末端中的所述一个第一末端电连接到所述第一接触中的对应的一个第一接触，所述第一接触中的所述对应的一个第一接触从所述多个第一末端中的所述一个第一末端偏移。
10.根据权利要求9所述的中介结构，还包括至少第二传导结构，所述至少第二传导结构具有至少部分如下，所述至少部分在横向方向上从所述多个接线键合的所述多个第二末端中的一个第二末端延伸、并且将所述多个第二末端中的所述一个第二末端电连接到所述第二接触中的对应的一个第二接触，所述第二接触中的所述对应的一个第二接触从所述多个第二末端中的所述一个第二末端偏移。
11.根据权利要求7所述的堆叠的微电子组件，其中所述中介结构的在相对朝向的所述第一侧与所述第二侧之间的厚度小于一毫米。
12.一种堆叠的微电子组件，包括根据权利要求7所述的中介结构，
其中所述第一部件是包括多个第一端子的第一微电子封装体，
其中所述第二部件是包括多个第二端子的第二微电子封装体，所述第二微电子封装体通过所述中介结构而与所述第一微电子封装体电连接，
其中所述第一微电子封装体包括朝向所述中介结构的所述第一侧的表面，并且所述第二微电子封装体包括朝向所述中介结构的所述第二侧的表面，
其中所述第一微电子封装体的相应的所述多个第一端子中的至少一些第一端子与所述中介结构的所述多个接线键合的对应的第一末端电连接，以及
其中所述第二微电子封装体的相应的所述多个第二端子中的至少一些第二端子与所述中介结构的所述多个接线键合的对应的第二末端电连接。
13.根据权利要求12所述的堆叠的微电子组件，其中所述第一微电子封装体还包括第一微电子元件，其中所述第一微电子元件的主表面被容纳在所述贯穿的开口内，以及其中所述第一微电子元件包括第一元件接触，所述第一元件接触通过所述中介结构而电连接到所述第二微电子封装体。
14.根据权利要求13所述的堆叠的微电子组件，其中所述第二微电子封装体还包括第二微电子元件，其中所述第二微电子元件包括第二元件接触，所述第二元件接触通过所述中介结构而电连接到所述第一微电子封装体。
15.根据权利要求13所述的堆叠的微电子组件，其中所述第一元件接触通过多个第一传导元件而电连接到所述中介结构，所述多个第一传导元件(i)覆盖在再分布结构上面并且/或者(ii)至少部分地嵌入于再分布结构内，所述再分布结构包括：再分布电介质层，覆盖在所述中介结构的所述电介质包封体上面；以及多个第二传导元件，通过所述再分布电介质层。
16.根据权利要求14所述的堆叠的微电子组件，其中所述第一元件接触还电连接到在所述再分布结构的相对侧上的接合元件。
17.根据权利要求13所述的堆叠的微电子组件，其中所述贯穿的开口填充有包封体，以将所述中介结构相对于所述第一微电子元件的位置固定。
18.根据权利要求12所述的堆叠的微电子组件，其中所述第一微电子封装体是电路面板。
19.一种形成堆叠的微电子组件的方法，包括如下步骤：
将第一部件放置为朝向中介结构的第一侧，所述第一部件在其上具有多个第一端子，所述中介结构还具有朝向与所述第一侧相对的方向的第二侧，所述第一侧和所述第二侧分别至少通过电介质包封体的相对朝向的第一表面和第二表面分离，
所述中介结构具有：贯穿的开口，在相对朝向的所述第一侧与所述第二侧之间延伸，所述开口被设定尺寸以容纳微电子元件的整个主表面；以及多个接线键合，用于与第一部件和第二部件电连接，并且通过所述包封体相互分离；每个接线键合具有：相对的第一末端和第二末端，分别在相对朝向的所述第一表面和所述第二表面中的至少一个表面处至少未被所述包封体完全地覆盖；以及在所述第一末端与所述第二末端之间的边界表面，被所述包封体接触，并且通过所述包封体与相邻的接线键合的边界表面分离；
将所述中介结构的至少一些接线键合的所述第一末端连接到在所述第一部件上的所述多个第一端子中的至少一些第一端子；
将第二部件放置为朝向所述中介结构的所述第二侧，所述第二部件在其上具有多个第二端子；以及
将所述第二部件连接到所述多个接线键合中的至少一些接线键合的所述第二末端。
20.根据权利要求19所述的方法，其中所述第一部件是第一微电子封装体，所述多个第一端子定位为沿着其第一连接表面，其中所述多个接线键合中的所述至少一些接线键合的所述第一末端物理连接到所述第一微电子封装体的所述多个第一端子中的所述至少一些第一端子。
21.根据权利要求19所述的方法，其中所述第二部件是第二微电子封装体，所述第二微电子封装体具有沿着其第二连接表面的传导层、以及定位为沿着其第三连接表面的多个第二端子，其中所述多个接线键合中的所述至少一些接线键合的所述第二末端在其所述传导层处物理地连接到所述第二微电子封装体。
22.根据权利要求19所述的方法，所述中介结构还包括第一接触和第二接触，所述第一接触和所述第二接触分别在相对的所述第一侧和所述第二侧，所述第一接触通过所述接线键合而与所述第二接触电连接，所述方法还包括形成至少一个传导结构，所述至少一个传导结构具有至少部分如下，所述至少部分在横向方向上从所述多个接线键合的所述多个第一末端中的一个第一末端延伸、并且将所述多个第一末端中的所述一个第一末端电连接到所述第一接触中的对应的一个第一接触，所述第一接触中的所述对应的一个第一接触从所述多个第一末端中的所述至少一个第一末端偏移。
23.根据权利要求22所述的方法，还包括形成至少第二传导结构，所述至少第二传导结构具有至少部分如下，所述至少部分在横向方向上从所述多个接线键合的所述多个第二末端中的一个第二末端延伸、并且将所述多个第二末端中的所述一个第二末端电连接到所述第二接触中的对应的一个第二接触，所述第二接触中的所述对应的一个第二接触从所述多个第二末端中的所述一个第二末端偏移。
24.根据权利要求20所述的方法，其中所述第一微电子封装体包括第一微电子元件，所述方法还包括将所述第一微电子元件装配在所述第一部件的在所述中介结构的所述贯穿的开口内暴露的部分上。
25.根据权利要求24所述的方法，还包括如下步骤：将所述微电子元件减薄至预定厚度，所述预定厚度不大于所述中介结构的厚度。
26.根据权利要求25所述的方法，其中将所述微电子元件减薄的步骤(i)在置入到所述中介结构中之前、或者(ii)在置入到所述中介结构中之后被执行。
27.根据权利要求20所述的方法，还包括如下步骤：使所述第一微电子封装体的所述第一连接表面与所述中介结构的所述第一表面邻接，从而所述第一连接表面与所述中介结构紧靠地齐平。
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US20140036454A1 (en) 2014-02-06
US20160079214A1 (en) 2016-03-17
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US10297582B2 (en) 2019-05-21
US9502390B2 (en) 2016-11-22

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