CN104681413A - Preparing method of low-stress polycrystalline silicon film - Google Patents
Preparing method of low-stress polycrystalline silicon film Download PDFInfo
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- CN104681413A CN104681413A CN201510086706.9A CN201510086706A CN104681413A CN 104681413 A CN104681413 A CN 104681413A CN 201510086706 A CN201510086706 A CN 201510086706A CN 104681413 A CN104681413 A CN 104681413A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention relates to a preparing method of a semiconductor film material, in particular to a preparing method of a low-stress polycrystalline silicon film, and belongs to the field of semiconductors. The preparing method of the low-stress polycrystalline silicon film comprises the following steps: first, determining the stress value of the low-stress polycrystalline silicon film needing to be prepared, then, calculating to obtain a film forming temperature and an annealing temperature, and finally respectively carrying out deposition and annealing technologies at the film forming temperature and the annealing temperature to obtain the required low-stress polycrystalline silicon film. Compared with the prior art, the preparing method simplifies the technical process, shortens the operation time, reduces the cost and improves the efficiency.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor film material, especially a kind of manufacture method of low stress polysilicon membrane, belongs to semiconductor applications.
Background technology
Polysilicon membrane causes the attention of people already as a kind of important semiconductor film material, at present, has been widely used in the manufacture of integrated circuit and various electronic device.Due to its distinctive conductive characteristic and excellent mechanical property, and good with semiconductor technology compatibility, be ideal structural material, have a wide range of applications as the basic structure material in MEMS.
The stress of polysilicon membrane is very important in MEMS structure, but excessive stress, excellent structure and morphology cannot be formed, or cause structure warpage, even fracture.
But existing technique carrys out multi-step process superposition mainly through the film of the positive negative stress of difference, realize required normal pressure and the negative stress of final composite membrane, if 570 degree of polysilicons are direct stress, 615 degree of polysilicons are negative stress, and in order to obtain low stress polysilicon film, existing technique needs the repeatedly complex superposition by these two kinds of films, but this manufacture method needs multi-step process, time-consuming, cost is high, and efficiency is low.
Because above-mentioned defect, the design people, actively in addition research and innovation, to founding a kind of manufacture method of low stress polysilicon membrane, make it have more value in industry.
Summary of the invention
For solving the problems of the technologies described above, the object of this invention is to provide a kind of manufacture method of low stress polysilicon membrane.
The manufacture method of a kind of low stress polysilicon membrane of the present invention, comprises the steps:
S1: the stress value determining the low stress polysilicon membrane needing preparation;
S2: calculate film-forming temperature and annealing temperature according to required stress value, wherein, described film-forming temperature is direct stress film-forming temperature or negative stress film-forming temperature, and described annealing temperature is direct stress annealing temperature or negative stress annealing temperature;
S3: under the condition of film-forming temperature, depositing polysilicon;
S4: under the condition of annealing temperature, carries out annealing in process to obtain required low stress polysilicon membrane to the polysilicon in step S3.
Further, described direct stress film-forming temperature is chosen in temperature range 550-600 DEG C, and wherein selected temperature is lower, and the direct stress generated is larger; Described negative stress film-forming temperature is chosen in temperature range 600-650 DEG C, and wherein selected temperature is lower, and the direct stress generated is less; Described direct stress annealing temperature is chosen in temperature range 900-1150 DEG C, and wherein selected temperature is less, and the direct stress generated is larger; Described negative stress annealing temperature is chosen in temperature range 900-1150 DEG C, and wherein selected temperature is less, and the direct stress generated is larger.
By such scheme, the present invention at least has the following advantages: the manufacture method of low stress polysilicon membrane of the present invention is by first determining the stress value of the low stress polysilicon membrane needing preparation, then film-forming temperature and annealing temperature is calculated, finally by carrying out deposit and annealing process respectively to obtain required low stress polysilicon membrane under film-forming temperature and annealing temperature condition, relative to existing technologies, this manufacture method simplifies technological process, save the activity duration, reduce cost, improve efficiency.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of low stress polysilicon membrane of the present invention;
Fig. 2 is the corresponding direct stress film-forming temperature of stress of low stress polysilicon membrane, the graph of a relation of negative stress film-forming temperature;
Fig. 3 is the graph of a relation of the corresponding direct stress annealing temperature of stress of low stress polysilicon membrane;
Fig. 4 is the graph of a relation of the corresponding negative stress annealing temperature of stress of low stress polysilicon membrane.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
See Fig. 1, the manufacture method of a kind of low stress polysilicon membrane described in a preferred embodiment of the present invention, comprises the steps:
S1: the stress value determining the low stress polysilicon membrane needing preparation;
S2: calculate film-forming temperature and annealing temperature according to required stress value, wherein, described film-forming temperature is direct stress film-forming temperature or negative stress film-forming temperature, and described annealing temperature is direct stress annealing temperature or negative stress annealing temperature;
S3: under the condition of film-forming temperature, depositing polysilicon;
S4: under the condition of annealing temperature, carries out annealing in process to obtain required low stress polysilicon membrane to the polysilicon in step S3.
In above-mentioned steps S, refer to Fig. 2, described direct stress film-forming temperature is chosen in temperature range 550-600 DEG C, and wherein selected temperature is lower, and the direct stress generated is larger; Described negative stress film-forming temperature is chosen in temperature range 600-650 DEG C, and wherein selected temperature is lower, and the direct stress generated is less.Refer to Fig. 3 and Fig. 4, described direct stress annealing temperature is chosen in temperature range 900-1150 DEG C, and wherein selected temperature is less, and the direct stress generated is larger; Described negative stress annealing temperature is chosen in temperature range 900-1150 DEG C, and wherein selected temperature is less, and the direct stress generated is larger.
Such as: in order to obtain the polysilicon membrane of low stress close to zero stress, first calculate film-forming temperature required for this polysilicon membrane and annealing temperature is respectively the direct stress film-forming temperature of 600 DEG C and the negative stress annealing temperature of 1150 DEG C, then under the direct stress film-forming temperature condition of 600 DEG C, depositing polysilicon; Under the condition of the negative stress annealing temperature of 1150 DEG C, polysilicon is carried out to the high temperature anneal of 1 hour, the low stress polysilicon membrane required for final acquisition.
In sum, the manufacture method of low stress polysilicon membrane of the present invention is by first determining the stress value of the low stress polysilicon membrane needing preparation, then film-forming temperature and annealing temperature is calculated, finally by carrying out deposit and annealing process respectively to obtain required low stress polysilicon membrane under film-forming temperature and annealing temperature condition, relative to existing technologies, this manufacture method simplifies technological process, saves the activity duration, reduce cost, improve efficiency.
The above is only the preferred embodiment of the present invention; be not limited to the present invention; should be understood that; for those skilled in the art; under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.
Claims (2)
1. a manufacture method for low stress polysilicon membrane, is characterized in that: described manufacture method comprises the steps:
S1: the stress value determining the low stress polysilicon membrane needing preparation;
S2: calculate film-forming temperature and annealing temperature according to required stress value, wherein, described film-forming temperature is direct stress film-forming temperature or negative stress film-forming temperature, and described annealing temperature is direct stress annealing temperature or negative stress annealing temperature;
S3: under the condition of film-forming temperature, depositing polysilicon;
S4: under the condition of annealing temperature, carries out annealing in process to the polysilicon in step S3 and obtains low stress polysilicon membrane with required.
2. the manufacture method of low stress polysilicon membrane according to claim 1, is characterized in that: described direct stress film-forming temperature is chosen in temperature range 550-600 DEG C, and wherein selected temperature is lower, and the direct stress generated is larger; Described negative stress film-forming temperature is chosen in temperature range 600-650 DEG C, and wherein selected temperature is lower, and the direct stress generated is less; Described direct stress annealing temperature is chosen in temperature range 900-1150 DEG C, and wherein selected temperature is less, and the direct stress generated is larger; Described negative stress annealing temperature is chosen in temperature range 900-1150 DEG C, and wherein selected temperature is less, and the direct stress generated is larger.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510086706.9A CN104681413A (en) | 2015-02-25 | 2015-02-25 | Preparing method of low-stress polycrystalline silicon film |
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| CN201510086706.9A CN104681413A (en) | 2015-02-25 | 2015-02-25 | Preparing method of low-stress polycrystalline silicon film |
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| CN101088150A (en) * | 2004-11-16 | 2007-12-12 | 应用材料股份有限公司 | Tensile and compressive stressed materials for semiconductors |
| CN101197307A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Oxide deposition method of shallow groove isolation region |
| CN101207025A (en) * | 2006-12-18 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing and regulating semiconductor element grids |
| CN101728253A (en) * | 2008-10-21 | 2010-06-09 | 中芯国际集成电路制造(北京)有限公司 | Manufacturing method and adjusting method of grating of semiconductor element |
| CN101777544A (en) * | 2010-01-06 | 2010-07-14 | 北方工业大学 | P-type silicon carbide device and method for improving ohmic contact performance thereof |
| CN102931233A (en) * | 2011-08-08 | 2013-02-13 | 中芯国际集成电路制造(上海)有限公司 | N-channel metal oxide semiconductor (NMOS) transistor and forming method thereof |
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| CN1527369A (en) * | 2003-03-03 | 2004-09-08 | ��ʽ�����װ | Semiconductor device with slot structure and producing method thereof |
| CN1906735A (en) * | 2003-11-18 | 2007-01-31 | 卡斯西部储备大学 | Method for depositing silicon carbide and ceramic films |
| CN101088150A (en) * | 2004-11-16 | 2007-12-12 | 应用材料股份有限公司 | Tensile and compressive stressed materials for semiconductors |
| CN101197307A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Oxide deposition method of shallow groove isolation region |
| CN101207025A (en) * | 2006-12-18 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing and regulating semiconductor element grids |
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| CN101777544A (en) * | 2010-01-06 | 2010-07-14 | 北方工业大学 | P-type silicon carbide device and method for improving ohmic contact performance thereof |
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Application publication date: 20150603 |