CN104569491A - Z-axis structure of accelerometer and production method of Z-axis structure - Google Patents
Z-axis structure of accelerometer and production method of Z-axis structure Download PDFInfo
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- CN104569491A CN104569491A CN201510050419.2A CN201510050419A CN104569491A CN 104569491 A CN104569491 A CN 104569491A CN 201510050419 A CN201510050419 A CN 201510050419A CN 104569491 A CN104569491 A CN 104569491A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000008021 deposition Effects 0.000 claims description 6
- 230000002787 reinforcement Effects 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000006355 external stress Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
Abstract
The invention discloses a Z-axis structure of an accelerometer and a production method of the Z-axis structure. The Z-axis structure of the accelerometer comprises a substrate, a fixed electrode and a mass block, wherein a first anchor point is arranged on the surface of the substrate; an end of the fixed electrode is connected to the first anchor point; the fixed electrode is suspended above the substrate through the first anchor point; a middle anchor point is also arranged on the surface of the substrate; the mass block is suspended above the fixed electrode through the middle anchor point; and a plurality of through holes are respectively formed in the mass block and the fixed electrode. The fixed electrode of the Z-axis structure is connected with the substrate through the first anchor point, so that a certain gap is formed between the fixed electrode and the substrate, a deformation transmission channel from the substrate to the fixed electrode is cut off, the area of a portion, which is in contact with the substrate, of the fixed electrode is reduced, the circumstance that deformation of the substrate is transmitted to the fixed electrode due to change of external stress and change of external temperature can be avoided effectively, and zero drift of the Z-axis structure is greatly reduced.
Description
Technical field
The invention belongs to micro electronmechanical (MEMS) field, more precisely, relate to a kind of micro electronmechanical accelerometer, particularly relate to the Z axis structure in a kind of accelerometer; The invention still further relates to the production method of Z axis structure.
Background technology
Z axis accelerometer is in the past all plate condenser type, and the motor pattern of mass is the structure of similar seesaw.With reference to figure 1, on the substrate 1 below mass 3, have two pieces of fixed electordes 2 that metal does, this fixed electorde 2 is attached on the surface of substrate 1.Mass 3 and two pieces of fixed electordes 2 form two electric capacity C1, C2 respectively.Wherein, mass 3 is supported on the top of substrate by anchor point 4.
The Z axis structure of this structure, its deformation ratio to external world caused by stress, temperature variation is more responsive.First the deformation that extraneous stress and temperature variation cause act on substrate 1, and then pass on fixed electorde 2.Because fixed electorde 2 is attached to above substrate 1, the deformation of substrate 1 is directly reflected into above fixed electorde 2.Under normal circumstances, the deformation of two fixed electorde 2 generations can not be equal, result just causes when not having accelerometer to input, the electric capacity of two fixed electordes, 2 pairs of movable mass 3 is unequal, final meeting output error signal, be reflected to chip top, the zero migration of Here it is Z axis builds up speed meter.And from the angle of deviser, wish that zero migration is the smaller the better.But the accelerometer of this structure, the zero migration that extraneous stress and temperature variation cause is unavoidable.
Summary of the invention
An object of the present invention is to provide a kind of new solution of Z axis structure of accelerometer.
According to a first aspect of the invention, provide a kind of Z axis structure of accelerometer, comprise substrate, fixed electorde, mass, the surface of described substrate is provided with the first anchor point, described fixed electorde is connected on the first anchor point by its end, and described fixed electorde is suspended on substrate by the first anchor point; The surface of described substrate is also provided with middle anchor point, and described mass is suspended at the top of fixed electorde by middle anchor point, and described mass, fixed electorde are provided with multiple through hole.
Preferably, described fixed electorde and the first anchor point one-body molded.
Preferably, the contiguous middle anchor point of described first anchor point.
Preferably, described fixed electorde adopts polycrystalline silicon material to make.
Preferably, the thickness of described fixed electorde is more than 5 μm.
Preferably, the lower surface of described fixed electorde is also provided with reinforcement structure.
Preferably, described reinforcement structure is reticulate texture.
Present invention also offers a kind of production method of Z axis structure, comprise the following steps:
A, at deposited on substrates first sacrifice layer, and on this first sacrifice layer, etch the region of the first anchor point, the first middle anchor point;
B, on the first sacrifice layer and the first anchor point, the first middle anchor point area deposition stationary electrode layer;
C, on stationary electrode layer, etch the pattern of fixed electorde and the first middle anchor point be connected with the first anchor point, and on fixed electorde, etch multiple through hole;
D, on fixed electorde and area deposition second sacrifice layer of the first middle anchor point;
E, the second sacrifice layer be positioned at directly over the first middle anchor point to be etched away;
F, at the second sacrifice layer disposed thereon mass layer, and on mass layer, etch the pattern of mass, the second middle anchor point, wherein the second middle anchor point is positioned at directly over the first middle anchor point; And on mass, etch multiple through hole;
G, remove the first sacrifice layer, the second sacrifice layer, form Z axis structure.
Preferably, also comprise smooth for the stationary electrode layer step changing into predetermined thickness between described step b, step c.
Preferably, in described step f, before pattern mass layer being etched mass, the second middle anchor point, also comprise smooth for the mass layer step changing into predetermined thickness.
Z axis structure of the present invention, fixed electorde is connected with substrate by the first anchor point, make that there is between fixed electorde and substrate certain gap, the deformation transmission channel of substrate to fixed electorde is just cut off by this, reduce the contact area between fixed electorde and substrate, the deformation of the substrate caused due to extraneous stress and temperature variation effectively can be avoided to pass on fixed electorde, greatly reduce the zero point drift of Z axis structure.
The present inventor finds, the substrate deformation brought due to extraneous stress, temperature variation in the prior art can be passed on fixed electorde, thus causes the deformation of fixed electorde, makes the difference of two electric capacity unequal.Therefore, the technical assignment that the present invention will realize or technical matters to be solved are that those skilled in the art never expect or do not anticipate, therefore the present invention is a kind of new technical scheme.
By referring to the detailed description of accompanying drawing to exemplary embodiment of the present invention, further feature of the present invention and advantage thereof will become clear.
Accompanying drawing explanation
In the description combined and the accompanying drawing forming a part for instructions shows embodiments of the invention, and illustrate that one is used from and explains principle of the present invention together with it.
Fig. 1 is the schematic diagram of traditional Z axle construction.
Fig. 2 is the schematic diagram of Z axis structure of the present invention.
Fig. 3 to Figure 10 is the schematic flow sheet of Z axis structure production method of the present invention.
Embodiment
Various exemplary embodiment of the present invention is described in detail now with reference to accompanying drawing.It should be noted that: unless specifically stated otherwise, otherwise positioned opposite, the numerical expression of the parts of setting forth in these embodiments and step and numerical value do not limit the scope of the invention.
Illustrative to the description only actually of at least one exemplary embodiment below, never as any restriction to the present invention and application or use.
May not discuss in detail for the known technology of person of ordinary skill in the relevant, method and apparatus, but in the appropriate case, described technology, method and apparatus should be regarded as a part for instructions.
In all examples with discussing shown here, any occurrence should be construed as merely exemplary, instead of as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and letter accompanying drawing below, therefore, once be defined in an a certain Xiang Yi accompanying drawing, then do not need to be further discussed it in accompanying drawing subsequently.
The accelerometer of traditional structure, its X-axis, Y direction all adopt translational movement, and Z axis all adopts the deflection way of seesaw type, relative to traditional Z axis accelerometer structure, the invention provides the Z axis structure in a kind of accelerometer, can be used for detecting the Z axis acceleration signal in vertical direction.
With reference to figure 2, the invention provides a kind of Z axis structure of accelerometer, it comprises substrate 1, mass 3, also comprises two fixed electordes 2, and the surface of described substrate 1 is provided with two the first anchor points 20, be respectively used to connection two fixed electordes 2, described fixed electorde 2 is connected on the first anchor point 20 by its end, and this first anchor point 20 can be integrated formed structure with fixed electorde 2, overall L-shaped, fixed electorde 2 is positioned in horizontal direction, and the first anchor point 20 is positioned in vertical direction.Fixed electorde 2 and substrate 1 less parallel are arranged, and due to the setting of the first anchor point 20, make to have certain gap between the surface of fixed electorde 2 and substrate 1, that is, fixed electorde 2 is suspended on substrate 1 by the first anchor point 20.Fixed electorde 2 can be fixed by single first anchor point 20, certainly, multiple anchor point also can be adopted to be fixed.
Between two the first anchor points 20, be provided with middle anchor point 4, this middle anchor point 4 is fixed on the surface of substrate 1, and described mass 3 passes through this middle anchor point 4 elastic mounting above fixed electorde 2.Such as mass 3 is connected with middle anchor point 4 by elastic beam, mass 3 is made to be elastically supported in the top of substrate 1, fixed electorde 2, certainly, between mass 3 and fixed electorde 2, there is certain gap, make mass 3 can form two Detection capacitances respectively with two fixed electordes 2, this belongs to the common practise of those skilled in the art, no longer repeats at this.
Wherein, mass 3, fixed electorde 2 are provided with multiple through hole 6, the structure release of fixed electorde, movable mass can be convenient to.
Z axis structure of the present invention, fixed electorde 2 is connected with substrate 1 by the first anchor point 20, make, between fixed electorde 2 and substrate 1, there is certain gap, the deformation transmission channel of substrate 1 to fixed electorde 2 is just cut off by this, reduce the contact area of fixed electorde 2 and substrate 1, the deformation of the substrate caused due to extraneous stress and temperature variation effectively can be avoided to pass on fixed electorde, greatly reduce the zero point drift of Z axis structure.
In Z axis structure of the present invention, anchor point 4 in the middle of described first anchor point 20 is contiguous.Two the first anchor points 20 are symmetrically distributed in the both sides of middle anchor point 4, under the prerequisite not affecting acceleration performance, make the first anchor point 20 be positioned as close to middle anchor point 4, so that the greatly lower capacitive differential got up due to extraneous stress, temperature variation.
Further, described fixed electorde 2 adopts single crystal silicon material to make, to improve the ability of anti-deformation of fixed electorde 2.The thickness of described fixed electorde 2 is preferably more than 5 μm.Certainly, if technological ability can reach, fixed electorde 2 can accomplish less than 5 μm.In order to ensure the intensity of fixed electorde 2 further, the lower surface of fixed electorde 2 can be provided with reinforcement structure, such as netted reinforcing rib structure.
With reference to figure 3 to Figure 10, present invention also offers a kind of production method of Z axis structure, comprise the following steps:
A, deposit the first sacrifice layer 7 on substrate 1, this first sacrifice layer 7 can be silica material.And on this first sacrifice layer 7, etch the region of the first anchor point, the first middle anchor point; Particularly, determine according to the shape of the first anchor point, the first middle anchor point, such as two the first anchor points need the both sides being symmetrically distributed in the first middle anchor point, therefore, the first sacrifice layer 7 also should make corresponding etch areas out, with reference to figure 3.
B, area deposition stationary electrode layer a at the first sacrifice layer 7, first anchor point, the first middle anchor point, with reference to figure 4, this stationary electrode layer a comprises the fixed electorde be positioned at directly over the first sacrifice layer 7, and is positioned at the middle anchor point 21 of the first anchor point 20, first in the first anchor point, the first middle anchor point region.Because first sacrifice layer 7 in this region is etched away, middle anchor point 21 Direct precipitation of described first anchor point 20, first on substrate 1, achieves the connection of the first middle anchor point 21 of anchor point 20, first and substrate 1.This stationary electrode layer a can be polycrystalline silicon material, to improve the intensity of stationary electrode layer.
Wherein, in view of the impact in the first anchor point, the first middle anchor point region, in order to the stationary electrode layer of predetermined thickness finally can be obtained, the deposit thickness of stationary electrode layer can be greater than predetermined thickness, and then carry out planarizing process, that is, it is thinning post-depositional stationary electrode layer to be carried out etching, then carries out step c.
C, on stationary electrode layer a, etch the pattern of the middle anchor point 21 of fixed electorde 2, first, and on fixed electorde 2, etch multiple through hole 6.That is, fixed electorde 2 and the first middle anchor point 21 are separated, and fixed electorde 2 is connected on substrate by the first anchor point 20, with reference to figure 5.
D, disposed thereon second sacrifice layer 8 at the middle anchor point 21 of fixed electorde 2, first, this second sacrifice layer 8 is not only positioned at the top of the middle anchor point 21 of fixed electorde 2, first, but also deposit in through hole 6, and go, with reference to figure 6 in gap between the first middle anchor point 21 and fixed electorde 2.With above-mentioned identical reason, the deposit thickness of the second sacrifice layer 8 can be greater than predetermined thickness, and then carries out planarizing process, and that is, it is thinning the second sacrifice layer 8 to be carried out etching, then carries out step e.
E, the second sacrifice layer 8 be positioned at directly over the first middle anchor point 21 to be etched away, formed with groove 80, with reference to figure 7;
F, disposed thereon mass layer at the second sacrifice layer 8, now, mass layer has not only deposited to the top of the second sacrifice layer 8, but also deposits in groove 80, links together with the first middle anchor point 21.With above-mentioned identical reason, in view of the impact of groove 80, in order to the mass layer of predetermined thickness finally can be obtained, the deposit thickness of mass layer can be greater than predetermined thickness, and then carry out planarizing process, that is, it is thinning post-depositional mass layer to be carried out etching, then carries out follow-up etching procedure.
Mass layer etches the pattern of the middle anchor point 31 of mass 3, second, and wherein the second middle anchor point 31 is positioned at directly over the first middle anchor point 21; And on mass 3, etch multiple through hole 6, with reference to figure 8.That is, mass 3 and the second middle anchor point 31 etch out by mass layer, make to link together by means of only elastic beam between mass 3 and the second middle anchor point 31, finally.That is, the above-mentioned middle anchor point 4 of the present invention comprises the middle anchor point 31 of the first middle anchor point 21, second be deposited on together, and wherein, the first middle anchor point 21 etches out from stationary electrode layer, and the second middle anchor point 31 etches out from mass layer.Be deposited on the first middle anchor point 21 together and the second middle anchor point 31 and constitute middle anchor point 4 for being supported on by mass 3 above substrate 1, fixed electorde 2.
G, remove the first sacrifice layer 7, second sacrifice layer 8, define Z axis structure of the present invention, with reference to figure 9.Can erode the first sacrifice layer, the second sacrifice layer 8 by HF solution or gaseous state HF, this belongs to the common practise of those skilled in the art, no longer repeats at this.By the through hole arranged on mass 3, fixed electorde 2, the corrosion of the first sacrifice layer 7, second sacrifice layer 8 can be accelerated, mass 3 and fixed electorde 2 are discharged rapidly.
Certainly, production method of the present invention, also comprises the step of pressing shell 5 on substrate 1, thus is encapsulated in shell 5 by each parts, with reference to Figure 10.
The first sacrifice layer 7 in step a, the second sacrifice layer 8 in steps d, is not limited to silica material, also can use the organism material as polyimide (PI).
In production method of the present invention, in the deposition process of stationary electrode layer, can adjusting process parameter be passed through, increase its internal stress; And in the deposition process of mass layer, adjusting process parameter can be passed through, reduce the internal stress of its film.
Although be described in detail specific embodiments more of the present invention by example, it should be appreciated by those skilled in the art, above example is only to be described, instead of in order to limit the scope of the invention.It should be appreciated by those skilled in the art, can without departing from the scope and spirit of the present invention, above embodiment be modified.Scope of the present invention is limited by claims.
Claims (10)
1. the Z axis structure of an accelerometer, it is characterized in that: comprise substrate (1), fixed electorde (2), mass (3), the surface of described substrate (1) is provided with the first anchor point (20), described fixed electorde (2) is connected on the first anchor point (20) by its end, and described fixed electorde (2) is suspended on substrate (1) by the first anchor point (20); The surface of described substrate (1) is also provided with middle anchor point (4), described mass (3) is suspended at the top of fixed electorde (2) by middle anchor point (4), and described mass (3), fixed electorde (2) are provided with multiple through hole (6).
2. Z axis structure according to claim 1, is characterized in that: described fixed electorde (2) is one-body molded with the first anchor point (20).
3. Z axis structure according to claim 1, is characterized in that: anchor point (4) in the middle of described first anchor point (20) is contiguous.
4. Z axis structure according to claim 1, is characterized in that: described fixed electorde (2) adopts polycrystalline silicon material to make.
5. Z axis structure according to claim 1, is characterized in that: the thickness of described fixed electorde (2) is more than 5 μm.
6. Z axis structure according to claim 1, is characterized in that: the lower surface of described fixed electorde (2) is also provided with reinforcement structure.
7. Z axis structure according to claim 6, is characterized in that: described reinforcement structure is reticulate texture.
8. a production method for Z axis structure, is characterized in that, comprises the following steps:
A, at upper deposition first sacrifice layer (7) of substrate (1), and on this first sacrifice layer (7), etch the region of the first anchor point, the first middle anchor point;
B, at the first sacrifice layer (7) area deposition stationary electrode layer (a) of upper and the first anchor point, the first middle anchor point;
C, on stationary electrode layer (a), etch the pattern of fixed electorde (2) and the first middle anchor point (21) be connected with the first anchor point (20), and etch multiple through hole (6) on fixed electorde (2);
Area deposition second sacrifice layer (8) of d, and first middle anchor point (21) upper at fixed electorde (2);
E, second sacrifice layer (8) that will be positioned at directly over the first middle anchor point (21) etch away;
F, at the second sacrifice layer (8) disposed thereon mass layer, and on mass layer, etch the pattern of mass (3), the second middle anchor point (31), wherein the second middle anchor point (31) is positioned at directly over the first middle anchor point (21); And multiple through hole (6) is etched on mass (3);
G, remove the first sacrifice layer (7), the second sacrifice layer (8), form Z axis structure.
9. production method according to claim 8, is characterized in that: also comprise smooth for stationary electrode layer (a) step changing into predetermined thickness between described step b, step c.
10. production method according to claim 8, it is characterized in that: in described step f, before pattern mass layer being etched mass (3), the second middle anchor point (31), also comprise smooth for the mass layer step changing into predetermined thickness.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510050419.2A CN104569491B (en) | 2015-01-30 | 2015-01-30 | The Z axis structure and its production method of a kind of accelerometer |
| PCT/CN2015/084966 WO2016119417A1 (en) | 2015-01-30 | 2015-07-23 | Z-axis structure of accelerometer and method for manufacturing same |
| US15/546,824 US20170356929A1 (en) | 2015-01-30 | 2015-07-23 | Z-axis structure of accelerometer and manufacturing method of z-axis structure |
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| CN201510050419.2A CN104569491B (en) | 2015-01-30 | 2015-01-30 | The Z axis structure and its production method of a kind of accelerometer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016119417A1 (en) * | 2015-01-30 | 2016-08-04 | 歌尔声学股份有限公司 | Z-axis structure of accelerometer and method for manufacturing same |
| CN110879303A (en) * | 2019-10-23 | 2020-03-13 | 杭州士兰微电子股份有限公司 | Inertial sensor and control method thereof |
| CN113970655A (en) * | 2021-12-23 | 2022-01-25 | 杭州麦新敏微科技有限责任公司 | MEMS accelerometer and forming method thereof |
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- 2015-01-30 CN CN201510050419.2A patent/CN104569491B/en active Active
Patent Citations (5)
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| US6167757B1 (en) * | 1997-09-08 | 2001-01-02 | The Regents Of The University Of Michigan | Single-side microelectromechanical capacitive accelerometer and method of making same |
| US6215645B1 (en) * | 1998-05-01 | 2001-04-10 | Motorola, Inc. | Differential capacitor structure |
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| WO2016119417A1 (en) * | 2015-01-30 | 2016-08-04 | 歌尔声学股份有限公司 | Z-axis structure of accelerometer and method for manufacturing same |
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| CN113970655A (en) * | 2021-12-23 | 2022-01-25 | 杭州麦新敏微科技有限责任公司 | MEMS accelerometer and forming method thereof |
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Effective date of registration: 20200608 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |