CN104538519A - Epitaxial structure for improving Si substrate LED light-emitting efficiency and preparation method - Google Patents
Epitaxial structure for improving Si substrate LED light-emitting efficiency and preparation method Download PDFInfo
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- CN104538519A CN104538519A CN201410816545.XA CN201410816545A CN104538519A CN 104538519 A CN104538519 A CN 104538519A CN 201410816545 A CN201410816545 A CN 201410816545A CN 104538519 A CN104538519 A CN 104538519A
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- layer
- gallium
- gallium nitride
- nitride
- led light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
The invention discloses an epitaxial structure for improving the Si substrate LED light-emitting efficiency and a preparation method. The structure comprises a substrate, a BP light reflection layer, a gallium nitride buffer layer, a non-doped gallium nitride layer, an n-type conductive gallium nitride layer, a multi-quantum well layer, a p-type aluminum and gallium nitride layer, a p-type gallium nitride layer, a contact layer, an upper electrode and a lower electrode, wherein the BP light reflection layer, the gallium nitride buffer layer, the non-doped gallium nitride layer, the n-type conductive gallium nitride layer and the multi-quantum well layer are sequentially manufactured on the substrate, the multi-quantum well layer is manufactured on one side of the upper face of the n-type conductive gallium nitride layer, a tabletop is formed on the other side of the upper face of the n-type conductive gallium nitride layer, the p-type gallium nitride layer and the contact layer are sequentially manufactured on the p-type aluminum and gallium nitride layer, the upper electrode is manufactured on the contact layer, and the lower electrode is manufactured on the tabletop of the upper face of the n-type conductive gallium nitride layer. According to the epitaxial structure, the problem of large lattice mismatch between the Si substrate and the epitaxial GaN material can be solved, and the LED light emitting efficiency is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of epitaxial structure and the preparation method that improve Si substrate LED light extraction efficiency.
Background technology
Be that the white LEDs of material is just with unprecedented speed high speed development with group III-nitride.White LEDs have more high brightness, low energy consumption, life-span long, respond the advantages such as fast, radiationless.For current energy source shortage, oneself becomes the restraining factors of China's sustainable economic development, adopt the semiconductor lighting of white LEDs can reduce by 50% electric consumption on lighting amount, environmental pollution can also be reduced simultaneously, thus reduce waste gas to a certain extent to the impact of Global climate change, improve our living environment.Higher luminous efficiency makes white LEDs become the very promising general illumination scheme of one.But, to real energy savings and reduction lighting expense use, also need the performance further improving semiconductor lighting.
In numerous LED substrate, the gallium nitride based LED of Si substrate has maximum application potential, but directly there is larger lattice mismatch and thermal mismatching in extension GaN material on a si substrate, and Si material has very strong absorption to photon, therefore we need to select suitable reflector layer, and this layer can effectively alleviate lattice mismatch larger between Si substrate and extension GaN material, the final light extraction efficiency improving LED.
Summary of the invention
The object of the invention is to, provide a kind of epitaxial structure and the preparation method that improve Si substrate LED light extraction efficiency, it can solve lattice mismatch larger between Si substrate and extension GaN material and improve the problem of LED light extraction efficiency.
The invention provides a kind of epitaxial structure improving Si substrate LED light extraction efficiency, comprising:
One substrate;
One BP reflector layer, it is produced on substrate;
One nitride buffer layer, it is produced on BP reflector layer;
One undoped gallium nitride layer, it is produced on nitride buffer layer;
One N-shaped conductive nitride gallium layer, it is produced on undoped gallium nitride layer;
One multiple quantum well layer, it is produced on the side above N-shaped conductive nitride gallium layer, and the opposite side above this N-shaped conductive nitride gallium layer forms a table top;
One p-type aluminum gallium nitride, it is produced on multiple quantum well layer;
One p-type gallium nitride layer, it is produced on p-type aluminum gallium nitride;
One contact layer, it is produced on p-type gallium nitride layer;
One top electrode, it makes on the contact layer;
One bottom electrode, it is produced on the table top above N-shaped conductive nitride gallium layer.
The present invention also provides a kind of preparation method improving the epitaxial structure of Si substrate LED light extraction efficiency, comprises the steps:
Step 1: make BP reflector layer, resilient coating, undoped gallium nitride layer, N-shaped conductive nitride gallium layer, multiple quantum well layer, p-type aluminum gallium nitride, p-type gallium nitride layer and contact layer successively at a substrate;
Step 2: the method adopting photoetching, in contact layer surface etching downwards, etching depth arrives the surface of N-shaped conductive nitride gallium layer, makes the side of this N-shaped conductive nitride gallium layer form table top;
Step 3: make top electrode on the contact layer do not etched;
Step 4: the table top on N-shaped conductive nitride gallium layer makes bottom electrode, completes preparation.
Beneficial effect of the present invention is: the present invention to solve on the Si substrate that exists at present extension LED quality of materials lowly and the problem of Si substrate extinction by inserting BP reflector layer between Si substrate and resilient coating.Because BP reflector layer lattice constant is between Si substrate and GaN, significantly can improve the quality of materials of GaN, in addition, refringence larger between BP and GaN also effectively can reflect the photon in directive substrate direction, improve the light extraction efficiency of LED, the final optical output power improving LED.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with embodiment, and with reference to accompanying drawing, the present invention is described in further detail, wherein:
Fig. 1 is LED structure schematic diagram of the present invention.
Fig. 2 is preparation flow figure of the present invention.
Embodiment
Refer to shown in Fig. 1, the invention provides a kind of epitaxial structure improving Si substrate LED light extraction efficiency, comprising:
One substrate 11;
One BP reflector layer 12, it makes on the substrate 11, and the material of described BP reflector layer 12 is boron phosphide, and thickness is 10-50nm, and in described BP reflector layer 12, the component of boron is 0.5, and the component of phosphorus is 0.5;
One nitride buffer layer 13, it is produced on BP reflector layer 12;
One undoped gallium nitride layer 14, it is produced on nitride buffer layer 13;
One N-shaped conductive nitride gallium layer 15, it is produced on undoped gallium nitride layer 14;
One multiple quantum well layer 16, it is produced on the side above N-shaped conductive nitride gallium layer 15, opposite side above this N-shaped conductive nitride gallium layer 15 forms a table top, and the periodicity of described multiple quantum well layer 16 is 3-15, the gallium nitrogen that each cycle comprises indium gallium nitrogen and makes thereon;
One p-type aluminum gallium nitride 17, it is produced on multiple quantum well layer 16;
One p-type gallium nitride layer 18, it is produced on p-type aluminum gallium nitride 17;
One contact layer 19, it is produced on p-type gallium nitride layer 18, and the material of described contact layer 19 is indium tin oxygen, zinc oxide or Graphene, and thickness is 300-2000nm;
One top electrode 20, it is produced on contact layer 19;
One bottom electrode 21, it is produced on the table top above N-shaped conductive nitride gallium layer 15.
Refer to Fig. 2, and cooperation is consulted shown in Fig. 1, the invention provides a kind of preparation method improving the epitaxial structure of Si substrate LED light extraction efficiency, adopts high-purity H
2or high-purity N
2or high-purity H
2and high-purity N
2mist as carrier gas, high-purity N H
3as N source, metal organic source trimethyl gallium (TMGa), triethyl-gallium (TEGa) are as gallium source, trimethyl indium (TMIn) is as indium source, N-type dopant is silane (SiH4), trimethyl aluminium (TMAl) is as aluminium source, and p-type dopant is two luxuriant magnesium (CP
2m
g), substrate is (0001) surface sapphire, and reaction pressure, between 100mbar to 800mbar, the present invention includes following steps:
Step 1: by substrate high-temperature cleaning process 10 minutes in the hydrogen atmosphere of 1000 DEG C, then carry out nitrogen treatment; Temperature is dropped to 600 DEG C, adjustment epitaxial growth atmosphere prepares grown epitaxial layer; BP reflector layer 12, resilient coating 13, undoped gallium nitride layer 14, N-shaped conductive nitride gallium layer 15, multiple quantum well layer 16, p-type aluminum gallium nitride 17, p-type gallium nitride layer 18 and contact layer 19 is made successively at a substrate 11; Wherein said BP reflector layer 12 be 600 DEG C, reaction chamber pressure is epitaxially grown under being the condition of 500Torr; After described BP has grown, 650 DEG C, reaction chamber pressure be the condition of 500Torr under epitaxial growth buffer, thickness is 10-40nm; Afterwards temperature is elevated to 1080 DEG C, reaction chamber pressure is grow unadulterated gallium nitride layer under the condition of 400Torr, thickness is 1-2 micron; Afterwards temperature be 1000 DEG C, reaction chamber pressure be the condition of 100Torr under growing n-type conductive nitride gallium layer, its V/III mol ratio is 100, and impurity is silicon; After N-shaped conductive nitride gallium layer growth terminates, growth multiple quantum well layer, growth temperature is 700 DEG C, growth pressure is 100Torr, V/III mol ratio is 300, multiple quantum well layer is made up of InGaN/GaN Multiple Quantum Well, and the thickness of described InGaN quantum well layer is 2.5nm, and the growth temperature of described gallium nitrogen is 1010 DEG C; After described multiple quantum well layer growth terminates, growth thickness is the p-type aluminum gallium nitride of 30nm, and growth temperature is 950 DEG C, and growth pressure is 100Torr, V/III mol ratio is 300; After described p-type aluminum gallium nitride growth terminates, growth thickness is the p-type gallium nitride layer of 150nm, and growth temperature is 900 DEG C, and reaction chamber pressure is 100Torr, V/III mol ratio is 100, and impurity is magnesium, and doping content is 10
19cm
-3; After described p-type gallium nitride layer growth terminates, growth thickness is the contact layer of 8nm, and growth temperature is 900 DEG C, and reaction chamber pressure is 150Torr, V/III mol ratio is 200, and impurity is magnesium, and doping content is 10
20cm
-3;
The material of wherein said BP reflector layer 12 is boron phosphide, and thickness is 10-50nm;
In wherein said BP reflector layer 12, the component of boron is 0.5, and the component of phosphorus is 0.5;
The periodicity of wherein said multiple quantum well layer 16 is 3-15, the gallium nitrogen that each cycle comprises indium gallium nitrogen and makes thereon;
The material of wherein said contact layer 19 is indium tin oxygen, zinc oxide or Graphene, and thickness is 3002000nm;
Step 2: the method adopting photoetching, in contact layer 19 surface etching downwards, etching depth arrives the surface of N-shaped conductive nitride gallium layer 15, makes the side of this N-shaped conductive nitride gallium layer 15 form table top;
Step 3: make top electrode 20 on the contact layer 19 do not etched; Described electrode 20 is chromium platinum, and thickness is 800nm;
Step 4: the table top on N-shaped conductive nitride gallium layer 15 makes bottom electrode 21, completes preparation, described electrode 21 is chromium platinum, and thickness is 800nm.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. improve an epitaxial structure for Si substrate LED light extraction efficiency, comprising:
One substrate;
One BP reflector layer, it is produced on substrate;
One nitride buffer layer, it is produced on BP reflector layer;
One undoped gallium nitride layer, it is produced on nitride buffer layer;
One N-shaped conductive nitride gallium layer, it is produced on undoped gallium nitride layer;
One multiple quantum well layer, it is produced on the side above N-shaped conductive nitride gallium layer, and the opposite side above this N-shaped conductive nitride gallium layer forms a table top;
One p-type aluminum gallium nitride, it is produced on multiple quantum well layer;
One p-type gallium nitride layer, it is produced on p-type aluminum gallium nitride;
One contact layer, it is produced on p-type gallium nitride layer;
One top electrode, it makes on the contact layer;
One bottom electrode, it is produced on the table top above N-shaped conductive nitride gallium layer.
2. the epitaxial structure improving Si substrate LED light extraction efficiency as claimed in claim 1, the material of wherein said BP reflector layer is boron phosphide, and thickness is 10-50nm.
3. the epitaxial structure improving Si substrate LED light extraction efficiency as claimed in claim 2, in wherein said BP reflector layer, the component of boron is 0.5, and the component of phosphorus is 0.5.
4. the epitaxial structure improving Si substrate LED light extraction efficiency as claimed in claim 1, the periodicity of wherein said multiple quantum well layer is 3-15, the gallium nitrogen that each cycle comprises indium gallium nitrogen and makes thereon.
5. the epitaxial structure improving Si substrate LED light extraction efficiency as claimed in claim 1, the material of wherein said contact layer is indium tin oxygen, zinc oxide or Graphene, and thickness is 300-2000nm.
6. improve a preparation method for the epitaxial structure of Si substrate LED light extraction efficiency, comprise the steps:
Step 1: make BP reflector layer, resilient coating, undoped gallium nitride layer, N-shaped conductive nitride gallium layer, multiple quantum well layer, p-type aluminum gallium nitride, p-type gallium nitride layer and contact layer successively at a substrate;
Step 2: the method adopting photoetching, in contact layer surface etching downwards, etching depth arrives the surface of N-shaped conductive nitride gallium layer, makes the side of this N-shaped conductive nitride gallium layer form table top;
Step 3: make top electrode on the contact layer do not etched;
Step 4: the table top on N-shaped conductive nitride gallium layer makes bottom electrode, completes preparation.
7. the preparation method improving the epitaxial structure of Si substrate LED light extraction efficiency as claimed in claim 6, the material of described BP reflector layer is boron phosphide, and thickness is 10-50nm.
8. the preparation method improving the epitaxial structure of Si substrate LED light extraction efficiency as claimed in claim 7, in wherein said BP reflector layer, the component of boron is 0.5, and the component of phosphorus is 0.5.
9. the preparation method improving the epitaxial structure of Si substrate LED light extraction efficiency as claimed in claim 6, the periodicity of wherein said multiple quantum well layer is 3-15, the gallium nitrogen that each cycle comprises indium gallium nitrogen and makes thereon.
10. the preparation method improving the epitaxial structure of Si substrate LED light extraction efficiency as claimed in claim 6, the material of wherein said contact layer is indium tin oxygen, zinc oxide or Graphene, and thickness is 300-2000nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900497A (en) * | 2015-06-15 | 2015-09-09 | 北京工业大学 | Method for directly growing graphene on nonmetallic substrate |
| CN106848005A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Lift flip LED chips of brightness and preparation method thereof |
| CN108417672A (en) * | 2018-02-01 | 2018-08-17 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN108807627A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of high-power vertical structure LED epitaxial structure and preparation method thereof |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
| CN117476827A (en) * | 2023-12-25 | 2024-01-30 | 江西兆驰半导体有限公司 | Epitaxial wafer of light-emitting diode with low contact resistance and preparation method thereof |
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| CN101807640A (en) * | 2010-03-05 | 2010-08-18 | 中国科学院半导体研究所 | Method for improving LED luminous efficiency by using three-dimensional polarized induction positive hole gas |
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| US6069021A (en) * | 1997-05-14 | 2000-05-30 | Showa Denko K.K. | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900497A (en) * | 2015-06-15 | 2015-09-09 | 北京工业大学 | Method for directly growing graphene on nonmetallic substrate |
| CN106848005A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Lift flip LED chips of brightness and preparation method thereof |
| CN108417672A (en) * | 2018-02-01 | 2018-08-17 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN108417672B (en) * | 2018-02-01 | 2019-07-19 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN108807627A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of high-power vertical structure LED epitaxial structure and preparation method thereof |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
| CN114583026B (en) * | 2022-05-05 | 2022-11-29 | 徐州立羽高科技有限责任公司 | Semiconductor deep ultraviolet light source structure |
| CN117476827A (en) * | 2023-12-25 | 2024-01-30 | 江西兆驰半导体有限公司 | Epitaxial wafer of light-emitting diode with low contact resistance and preparation method thereof |
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