CN104505351A - Preparation method of lateral-interconnection package on package structure - Google Patents
Preparation method of lateral-interconnection package on package structure Download PDFInfo
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- CN104505351A CN104505351A CN201410838535.6A CN201410838535A CN104505351A CN 104505351 A CN104505351 A CN 104505351A CN 201410838535 A CN201410838535 A CN 201410838535A CN 104505351 A CN104505351 A CN 104505351A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/89—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/89—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L2224/81 - H01L2224/86
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Abstract
The invention relates to the technical field of semiconductor package and discloses a preparation method of a lateral-interconnection package on package structure. The lateral-interconnection package on package structure comprises an upper package body and a lower package body. The preparation method includes manufacturing the upper package body with multiple interlayer solder balls, and manufacturing the lower package body with a redistribution layer and a lateral interconnection structure, wherein the redistribution layer is formed at the top of a lower plastic seal of the lower package body, and the lateral interconnection structure is formed on the periphery of the lower plastic seal of the lower package body; aligning and welding the upper package body and the lower package body so as to form interconnection channels among the interlayer solder balls, the redistribution layer and the lateral interconnection structure and resultantly form the lateral-interconnection package on package structure. By means of the lateral interconnection structure and the redistribution layer at the top of the plastic seal, the number of the interconnection channels between the upper package body and the lower package body is increased. By combining the lateral interconnection structure with through molding via technology, the number of the interconnection channels between the upper package body and the lower package body is further increased.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, especially a kind of preparation method of stack package structure of side direction interconnection.
Background technology
Stacking (Package on Package, PoP) encapsulation is a kind of typical 3D encapsulation technology, is mainly used in processor and memory system is integrated, and its typical products is the A7 processor of apple.Along with memory bandwidth demand improves constantly, the Main Bottleneck of restriction PoP package application is that conventional P oP structure upper and lower inter-level interconnects soldered ball number is limited, and namely the effective port number of internal memory is limited.
With peace by (Amkor), what the company that Samsung (Samsung) is representative released the PoP packing forms of volume production can be mainly two kinds: flip-chip sized package-stacked package (fcCSP-PoP) as shown in Figure 1 and as shown in Figure 2 penetrate molding via hole-upside-down mounting stacked package (TMV-fcPoP).Wherein, levels encapsulation chips can adopt wire bonding (Wire Bond, WB), face-down bonding (Flip Chip, FC) or both combining forms, can stackingly also can tile.Penetrate in molding via hole (Through molding via, TMV) and fill with soldered ball the interconnection realizing levels.In order to improve memory bandwidth, each company is all devoted to soldered ball between reduction layer (Solder ball)/TMV size and spacing, but all will be subject to the restriction of technique and rate of finished products.
Some patents and article also encapsulate the concept of 3D interconnection up and down according to PoP, develop and a lot of encapsulating structures, or be integrated with more function.Such as:
Amkor company is at patent System and method for shielding of Package onPackage (PoP) assemblies, in US7851834B1, towards radio frequency (RF) on TMV-fcPoP basis, form the PoP structure with shielding construction, as shown in Figure 3.
In Fig. 4, conductive coating 32 and metal wire 16a (ground connection) are connected to form shielding construction and shield for RF.Conductive coating 32 can with electroplating, and Vacuum printing, the techniques such as vacuum moulding machine, is insert molded, spraying realize.Equally, this patent is also suitable for soldered ball and fills the interconnection realizing TMV levels.
The Semiconductor Manufacturing Company in Taiwan, adopt fan-in type stacked package (Fan-in PoP) structure, lower floor's encapsulation is primarily of polymeric layer and Si base substrate and the active chip composition that is included, and fill various dielectric material formation resistance/capacitance passive device [Package-on-Package (PoP) Device with Integrated Passive Device in the vias, US7692311B2], as shown in Figure 5.Upper lower package body in this patent mainly adopts front road technique and material system, leans on peace, and the conventional P oP that Samsung proposes is packaged with marked difference.
The scholar of Singapore Science & Technology Bureau (A*STAR) is by bilevel flush type wafer level packaging (embedded wafer level Packaging, EWLP) be stacked, have employed redistributing layer (the Redistribution layer at TMV on capsulation material and plastic packaging top, RDL) technology, and constitute substrate integration wave-guide (SIW) resonator by TMV, be integrated in encapsulating structure, as shown in Figure 6.EWLP stacked package mainly have employed wafer-level packaging mode, the PoP with tradition with organic substrate structure is packaged with obvious difference [Rui Li, Boo Yang Jung, et al., Novel HighPerformance Millimeter-Wave Resonator and Filter Structures usingEmbedded Wafer Level Packaging (EWLP) Technology, Electronics PackagingTechnology Conference (EPTC 2013), pp:844-847].
Latter two packing forms, i.e. fan-in type stacked package (Fan-in PoP) structure and flush type wafer level packaging (embedded wafer level Packaging, EWLP) stacked structure, compare the packing forms of fcCSP-PoP and TMV-fcPoP two kinds of main flows, still be in conceptual phase, application surface relative narrower.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is for Amkor, and Samsung is the PoP packing forms representing main flow, inter-layer passages number limitation problem, proposes the preparation method of the stack package structure of a kind of side direction interconnection, to improve the quantity of inter-level interconnects port number.
(2) technical scheme
For achieving the above object, the invention provides the preparation method of the stack package structure of a kind of side direction interconnection, this stack package structure comprises upper strata packaging body and lower floor's packaging body, and the method comprises: make the upper strata packaging body that bottom has multiple interlayer soldered ball; Make lower floor's packaging body with redistributing layer and side direction interconnection structure, wherein, redistributing layer is formed at the top of lower floor's plastic packaging of this lower floor's packaging body, and side direction interconnection structure is formed at the surrounding of lower floor's plastic packaging of this lower floor's packaging body; Upper strata packaging body and lower floor packaging body are aimed at and welds, make multiple interlayer soldered ball, redistributing layer and side direction interconnection structure form interconnecting channel, and then form the stack package structure of side direction interconnection.
In such scheme, described making bottom has the upper strata packaging body of multiple interlayer soldered ball, comprising:
Step 1: adopt laminating technology or laminated process to manufacture top substrate layer, then top substrate layer section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 2: adopt that eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement is pasted method and is combined by conducting resinl or Heraeus with rectangular substrate by upper strata nude film;
Step 3: adopt supersonic bonding, thermocompression bonding or thermosonication bonding that upper strata nude film and rectangular substrate are carried out electric interconnection;
Step 4: adopt transfer formation technology, injection molding technology or preform technique to form upper strata plastic packaging around the nude film of upper strata, to protect upper strata nude film;
Step 5: plant ball at rectangular substrate bottom, forms multiple interlayer soldered ball;
Step 6: rectangular substrate is cut into some upper stratas encapsulation unit, obtains the upper strata packaging body that bottom has multiple interlayer soldered ball.
In such scheme, the material that multiple interlayer soldered ball described in step 5 adopts is scolding tin, and between upper strata packaging body and lower floor's packaging body, adopts dishful to arrange or arrange in outer ring.
In such scheme, described making has lower floor's packaging body of redistributing layer and side direction interconnection structure, comprising:
Step 11: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 12: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate;
Step 13: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect lower floor's nude film;
Step 14: adopt laser pit ablation lower floor plastic packaging, form the via hole for the formation of side direction interconnection structure;
Step 15: adopt chemical plating, copper plating process successively to lower floor's plastic packaging with via hole, forms the metallization via hole of side direction interconnection structure, forms redistributing layer simultaneously on lower floor's plastic packaging by full for via hole plating copper;
Step 16: rectangular for every bar substrate is cut into some lower layer package substrate unit with redistributing layer and side direction interconnection structure;
Step 17: the outside of metallic copper adopts chemical plating tweezer gold or tweezer porpezite clad copper in side direction interconnection structure, prevents metallic copper;
Step 18: adopt dishful arrangement or outer ring arrangement mode to plant ball in base plate for packaging unit bottom, and clean the residue solder in bottom land, obtain lower floor's packaging body with redistributing layer and side direction interconnection structure.
In such scheme, adopt the underfill described in molded underfill technique step of replacing 12 and the plastic package process described in step 13.
In such scheme, when the via hole formed described in step 14 is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
In such scheme, described redistributing layer adopts sandwich construction, forms redistributing layer, comprising: adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively described in step 15 on lower floor's plastic packaging; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
In such scheme, described making has lower floor's packaging body of redistributing layer and side direction interconnection structure, comprising:
Step 21: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 22: at rectangular substrate surface attachment discrete device;
Step 23: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate;
Step 24: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect levels nude film;
Step 25: adopt laser pit ablation lower floor plastic packaging, formed for the formation of side direction interconnection structure and the via hole penetrating molding via hole;
Step 26: lower floor's plastic packaging with via hole is adopted to chemical plating successively, electroplates into copper ring, forms side direction interconnection structure and the metallization via hole penetrating molding; Adopt filling holes with resin technique to be filled up with the metallization via hole penetrating molding by test interconnection structure, play the effect supporting redistributing layer and prevent the burning of side direction interconnection structure copper; On lower floor's plastic packaging, form redistributing layer simultaneously;
Step 27: adopt dishful arrangement or outer ring arrangement mode to plant ball at rectangular substrate bottom, and clean the residue solder in bottom land;
Step 28: rectangular for every bar substrate is cut into some lower floor's encapsulation units with redistributing layer and side direction interconnection structure, obtains lower floor's packaging body with redistributing layer and side direction interconnection structure.
In such scheme, adopt the underfill described in molded underfill technique step of replacing 23 and the plastic package process described in step 24.
In such scheme, when the via hole formed described in step 25 is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
In such scheme, described redistributing layer adopts sandwich construction, forms redistributing layer, comprising: adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively described in step 26 on lower floor's plastic packaging; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
In such scheme, described making has lower floor's packaging body of redistributing layer and side direction interconnection structure, comprising:
Step 31: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 32: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate;
Step 33: eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement pastes method by lower floor's nude film paster on rectangular substrate in employing, and adopts supersonic bonding, thermocompression bonding or thermosonication bonding that lower floor's nude film and rectangular substrate are carried out electric interconnection;
Step 34: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect levels nude film;
Step 35: adopt laser pit ablation lower floor plastic packaging, formed for the formation of side direction interconnection structure and the via hole penetrating molding via hole;
Step 36: chemical plating, copper plating process are adopted successively to lower floor's plastic packaging with via hole, what the full copper of via hole plating is formed side direction interconnection structure and the full copper of plating penetrates molding via hole, forms redistributing layer on lower floor's plastic packaging simultaneously;
Step 37: rectangular for every bar substrate is cut into some lower layer package substrate unit with redistributing layer and side direction interconnection structure;
Step 38: the outside of metallic copper adopts chemical plating tweezer gold or tweezer porpezite clad copper in side direction interconnection structure, prevents metallic copper;
Step 39: adopt dishful arrangement or outer ring arrangement mode to plant ball in base plate for packaging unit bottom, and clean the residue solder in bottom land, obtain lower floor's packaging body with redistributing layer and side direction interconnection structure.
In such scheme, when the via hole formed described in step 34 is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
In such scheme, described redistributing layer adopts sandwich construction, forms redistributing layer, comprising: adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively described in step 36 on lower floor's plastic packaging; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
In such scheme, described side direction interconnection structure connects the metal level in described redistributing layer, under connect the underlying substrate of described lower floor packaging body, be circular vias or the quadrangle via hole formed by circular vias platoon, adopt chemical plating in the vias successively, plating is filled with metallic copper, section forms discrete half via hole, mostly via structure or cube structure.
In such scheme, the metal material in described side direction interconnection structure is all coated or most of coated by resin, tweezer gold or tweezer porpezite, to prevent metal material oxidized.
In such scheme, described redistributing layer is made up of metal level and dielectric layer, and metal level is used for realizing electric interconnection, and dielectric layer is used for realizing isolation or zone isolation between interconnection line.Described redistributing layer comprises single-layer metal or multiple layer metal.
In such scheme, described upper strata packaging body comprises top substrate layer, upper strata nude film and upper strata plastic packaging, wherein: described upper strata nude film is formed on top substrate layer, and upper strata nude film is combined by conducting resinl or Heraeus with top substrate layer, or adopt wire bonding or flip chip bonding mode to combine; Described upper strata plastic packaging is centered around around the nude film of upper strata, for the protection of upper strata nude film; Described lower floor packaging body comprises underlying substrate, lower floor's nude film, lower floor's plastic packaging, redistributing layer, side direction interconnection structure and bottom ball grid array soldered ball, wherein: described lower floor nude film is formed on underlying substrate, lower floor's nude film is combined by conducting resinl or Heraeus with underlying substrate, or adopts wire bonding or flip chip bonding mode to combine; Described lower floor plastic packaging is centered around around lower floor's nude film, and for the protection of lower floor's nude film, and support-side is to interconnection structure; Described bottom ball grid array soldered ball is formed under underlying substrate, for realizing the electric interconnection between lower floor's packaging body and PCB substrate.
In such scheme, containing multiple upper stratas thermal hole in described top substrate layer, containing multiple lower floors thermal hole in described underlying substrate, the single-layer metal that this upper strata thermal hole comprises with interlayer soldered ball, redistributing layer successively or multiple layer metal, side direction interconnection structure and lower floor's thermal hole, form the 3D heat dissipation channel of this stack package structure.
In such scheme, during stratum conducting in described redistributing layer and described side direction interconnection structure and described underlying substrate, electromagnetic shielding can be formed, for the electromagnetic isolation of lower floor's nude film.
In such scheme, described lower floor packaging body also comprises and multiplely penetrates molding via hole, and this penetrates molding via hole and is formed under part or all of described interlayer soldered ball, runs through redistributing layer and lower floor's plastic packaging.
In such scheme, penetrate in molding via hole adopt chemical plating, the full hole of electro-coppering or plating copper ring successively at this, make interlayer soldered ball, redistributing layer and penetrate molding via hole to form interconnecting channel, realize the electric interconnection between this upper strata packaging body and this lower floor's packaging body.
In such scheme, describedly to penetrate in molding via hole metallic copper and adopt consent technology at this for during plating copper ring, play the effect supporting redistributing layer.
In such scheme, described consent technology adopts carries out scolding tin or potting resin penetrating in molding via hole.
In such scheme, described upper strata nude film or described lower floor nude film at least one, when for time multiple, described upper strata nude film adopt stacking, tiling, embedded or in the mode of burying be arranged on top substrate layer, described lower floor nude film adopt stacking, tiling, embedded or in the mode of burying be arranged on underlying substrate.
In such scheme, described upper strata nude film adopts gold thread, copper cash or silver-colored line to realize electric interconnection with the interconnection line in top substrate layer and via hole, and the interconnection line in described lower floor nude film employing controlled collapse chip connection salient point or copper pillar bump and underlying substrate and via hole realize electric interconnection.
In such scheme, described upper strata nude film or described lower floor nude film adopt discrete device to substitute.
(3) beneficial effect
Relative to the TMV-fcPoP packing forms shown in fcCSP-PoP and Fig. 2 shown in Fig. 1, the preparation method of the stack package structure of side direction interconnection provided by the invention, mainly contains following advantage:
1, the preparation method of the stack package structure of side direction interconnection provided by the invention, in side direction interconnection structure technique, processing dimension can be less than solder Diameter of Solder Ball, and between levels, number of channels can be comparable with conventional package form.
2, the preparation method of the stack package structure of side direction interconnection provided by the invention, the soldered ball fill method that TMV can use Amkor traditional realizes encapsulating up and down, also can adopt chemical plating successively, plating filling perforation mode realizes interconnecting up and down, filling perforation can be filled up or fill up the materials such as resin after the metal such as electro-coppering and be realized.
3, the preparation method of the stack package structure of side direction interconnection provided by the invention, by side direction interconnection technique and RDL technology, opens the another kind of form of upper and lower inter-level interconnects.After combining with TMV technology, recruitment, much larger than 1/3 of conventional P oP structure, significantly increases application bandwidth.Soldered ball between reduction layer/TMV size and distance method still can be adopted to improve number of channels further.
4, the preparation method of the stack package structure of side direction interconnection provided by the invention, single/multiple RDL technology on capsulation material makes design more flexible, in conjunction with the thermal hole (thermal via) in top substrate layer and interlayer soldered ball and side direction interconnection structure, the 3D heat dissipation channel of PoP can be formed.
5, the preparation method of the stack package structure of side direction interconnection provided by the invention, during stratum conducting in lower floor's encapsulation in the RDL layer at plastic packaging top and side direction interconnection structure and underlying substrate, can effectiveness be formed, can be used for the electromagnetic isolation of bottom RF chip.Be different from the shielding construction in patent US7851834B1: the conductive pattern layer being arranged in lower floor's encapsulation top in patent US7851834B1 is large area continuous ground plane, only for shielding action, and the RDL layer in the present invention is except can be used as a shielding construction part, mainly as interconnecting channel, can be multilayer, preparation scheme is not identical yet; The conductive pattern layer being arranged in lower floor's encapsulation side in patent US7851834B1 is continuous level, and the side direction interconnection structure in the present invention is discrete half via hole, mostly via structure or cube structure, and preparation scheme is not identical yet.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of flip-chip sized package-stacked package (fcCSP-PoP) in prior art;
Fig. 2 is the schematic diagram penetrating molding via hole-upside-down mounting stacked package (TMV-fcPoP) in prior art;
Fig. 3 is the sectional view with the PoP structure of shielding construction in prior art;
Fig. 4 is with the sectional view that the PoP bottom of shielding construction encapsulates in prior art;
Fig. 5 is the sectional view adopting fan-in type stacked package (Fan-in PoP) structure in prior art;
Fig. 6 is by the sectional view of bilevel flush type wafer level packaging (embedded waferlevel Packaging, EWLP) stack package structure in prior art;
Fig. 7 is the profile of the PoP encapsulating structure of side direction provided by the invention interconnection;
Fig. 8 is the sectional view of Fig. 7 packaging body at the middle and upper levels;
The sectional view of Tu9Shi Tu7Zhong lower floor packaging body;
Figure 10 is the vertical view of side direction interconnection structure in the position of lower floor's packaging body;
Figure 11 is cutting to figure according to PoP encapsulating structure during the employing plating copper ring of embodiment of the present invention TMV hole;
The sectional view of PoP encapsulating structure when Figure 12 is hole full of the employing electro-coppering of embodiment of the present invention TMV hole;
Figure 13 is the method flow diagram of the stack package structure of preparation side direction provided by the invention interconnection;
Figure 14 is the process chart of the preparation upper strata packaging body according to the embodiment of the present invention 1;
Figure 15 is the process chart of the preparation lower floor packaging body according to the embodiment of the present invention 1;
Figure 16 is the process chart of the stack package structure interconnected according to the preparation side direction of the embodiment of the present invention 2;
Figure 17 is the process chart of the stack package structure interconnected according to the preparation side direction of the embodiment of the present invention 3.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
In order to improve inter-level interconnects port number further, the present invention utilizes the redistributing layer (Redistribution layer, RDL) at side direction interconnection and plastic packaging top, forms the PoP encapsulating structure of a kind of new side to interconnection.Further, after side direction interconnection structure and TMV combine with technique, the number of channels that the further raising of meeting encapsulates up and down.Wherein, this side direction interconnection PoP encapsulating structure in TMV adopt the metal filled mode such as chemical plating, electro-coppering to realize electric interconnection successively.
As shown in Figure 7, Fig. 7 is the profile of the PoP encapsulating structure of side direction provided by the invention interconnection.This PoP encapsulating structure comprises upper strata packaging body 100 and lower floor's packaging body 200, wherein, interconnecting channel by being made up of with side direction interconnection structure 206 multiple interlayer soldered ball 107, redistributing layer 208 between this upper strata packaging body 100 and this lower floor's packaging body 200 realizes electric interconnection, multiple interlayer soldered ball 107 is formed between upper strata packaging body 100 and lower floor's packaging body 200, redistributing layer 208 is formed at the top of lower floor's plastic packaging 201 of lower floor's packaging body 200, and side direction interconnection structure 206 is formed at the surrounding of lower floor's plastic packaging 201 of lower floor's packaging body 200.
Side direction interconnection structure 206 is circular vias or the quadrangle via hole formed by circular vias platoon, adopt chemical plating in the vias successively, plating is filled with the metal materials such as metallic copper, after section, form discrete half via hole, mostly via structure or cube structure.Metal material in side direction interconnection structure 206 is all coated or most of coated by materials such as resin, tweezer gold or tweezer porpezites, to prevent metal material oxidized.Side direction interconnection structure 206 connects the metal level in redistributing layer 208, the underlying substrate 205 of Xia Jie lower floor packaging body 200.Redistributing layer 208 is made up of metal level and dielectric layer, and metal level is used for realizing electric interconnection, and dielectric layer is used for realizing isolation or zone isolation between interconnection line.Redistributing layer 208 can comprise single-layer metal or multiple layer metal.The material that multiple interlayer soldered ball 107 adopts is scolding tin, and between upper strata packaging body 100 and lower floor's packaging body 200, adopts dishful to arrange or arrange in outer ring.Due to the existence of redistributing layer 208, the quantity of interlayer soldered ball 107 is unrestricted, can arrange by dishful, also can outer ring arrangement.
Fig. 8 is the sectional view of Fig. 7 packaging body 100 at the middle and upper levels.Upper strata packaging body 100 comprises top substrate layer 105, upper strata nude film 103 and upper strata plastic packaging 101.Upper strata nude film 103 is formed on top substrate layer 105, and upper strata nude film 103 is combined by conducting resinl or Heraeus with top substrate layer 105, or adopts wire bonding or flip chip bonding mode to combine; Upper strata plastic packaging 101 is centered around around upper strata nude film 103, for the protection of upper strata nude film 103.
Upper strata nude film 103 at least one, when upper strata nude film 103 is multiple, adopt stacking, tiling, embedded or in the mode of burying be arranged on top substrate layer 105.Upper strata nude film 103 is combined by conducting resinl or Heraeus 102 with top substrate layer 105, and wire bonding or flip chip bonding mode also can be adopted to combine.Fig. 8 at the middle and upper levels nude film 103 adopts the bonding lines such as gold thread, copper cash or silver-colored line 104 to realize electric interconnection with the interconnection line 111 in top substrate layer 105 and upper strata via hole 112.Upper strata nude film 103 also can substitute with discrete device.Upper strata via hole 112 part as during thermolysis also known as cross thermal hole (thermal via), the electric attribute of thermal hole is generally ground connection.
Fig. 9 is the sectional view of Tu7Zhong lower floor packaging body 200.Lower floor's packaging body 200 comprises lower floor's nude film 203, underlying substrate 205, lower floor's plastic packaging 201, the redistributing layer (RDL) 208 (redistributing layer 208 comprises metal level and dielectric layer) at plastic packaging top, side direction interconnection structure 206 and bottom ball grid array (BGA) soldered ball 207.Lower floor's nude film 203 is formed on underlying substrate 205, and lower floor's nude film 203 is combined by conducting resinl or Heraeus with underlying substrate 205, or adopts wire bonding or flip chip bonding mode to combine; Lower floor's plastic packaging 201 is centered around around lower floor's nude film 203, and for the protection of lower floor's nude film 203, and support-side is to interconnection structure 206; Bottom ball grid array soldered ball 207 is formed under underlying substrate 205, for realizing the electric interconnection between lower floor's packaging body 200 and PCB substrate.
Lower floor's nude film 203 at least one, when lower floor's nude film 203 is multiple, adopt stacking, tiling, embedded or in the mode of burying be arranged on underlying substrate 205.Lower floor's nude film 203 is combined by conducting resinl or Heraeus 202 with underlying substrate 205, and wire bonding or flip chip bonding mode also can be adopted to combine.Tu9Zhong lower floor nude film 203 adopts controlled collapse chip connection salient point (Controlled Collapse ChipConnection, C4) or the salient point 210 such as copper pillar bump, electric interconnection is realized with the interconnection line 211 in underlying substrate 205 and lower floor's via hole 212.Lower floor's nude film 203 also can substitute with discrete device.Upper strata via hole 112 part as during thermolysis also known as cross thermal hole (thermal via), the electric attribute of thermal hole is generally ground connection.Lower floor's plastic packaging 201 is centered around around lower floor's nude film 203, plays the effect of protection lower floor nude film 203 and support vertical interconnecting structure 206.
Lower filler 209 is filled between salient point 210, for the protection of salient point 210.Alternatively, molded underfill (MUF) technique also can be adopted to replace the operation of underfill (underfill) and plastic packaging, thus remove the lower filler 209 of elimination.
Multiple interlayer soldered ball 107, redistributing layer 208 form interconnecting channel with side direction interconnection structure 206, this interconnecting channel connects the top substrate layer 105 of layer packaging body 100, the underlying substrate 205 of Xia Jie lower floor packaging body 200, completes the electric interconnection between packaging body 100 and lower package body 200.Finally, the PoP encapsulating structure of side direction provided by the invention interconnection is by realizing electric interconnection between the bottom soldered ball 207 of lower floor's packaging body 200 and PCB substrate.
In Fig. 9, side direction interconnection structure 206 can adopt the smithcraft such as chemical plating, electro-coppering successively, and in side direction interconnection structure 206, the material such as metal material external application chemical plating tweezer gold or tweezer porpezite is coated, is oxidized to prevent metal material.The vertical view of side direction interconnection structure 206 can be the various structures such as semicircle, mostly circular or rectangle, i.e. or rectangular centre circular along encapsulation unit outmost turns or partial center section gained, as shown in Figure 10.The object of partial center section is the adhesion in order to strengthen metal/resin and lower floor's capsulation material 201 in side direction interconnection structure 206.Figure 10 only represents side direction interconnection structure 206 relative position information, and wherein dotted line represents the schematic diagram of the front vertical interconnecting structure profile original appearance of section, and actual manufacture is not limited to the figure shown in Figure 10.
When lower floor's plastic packaging 201 top redistributing layer 208 of lower floor's packaging body 200, side direction interconnection structure 206 are with interconnection line/layer 211 (ground connection) conducting in underlying substrate 205, effectiveness can be formed.Redistributing layer 208, except can be used as a shielding construction part, mainly as interconnecting channel, can be multilayer; Side direction interconnection structure 206 is discrete half via hole, mostly via structure or cube structure.
Containing multiple upper stratas thermal hole 112 in top substrate layer 105, containing multiple lower floors thermal hole 212 in underlying substrate 205, the single-layer metal that this upper strata thermal hole 112 comprises with interlayer soldered ball 107, redistributing layer 208 successively or multiple layer metal, side direction interconnection structure 206 and lower floor's thermal hole 212, form the 3D heat dissipation channel of this stack package structure.
The PoP encapsulating structure of side direction interconnection provided by the invention can also combine with penetrating molding via hole (TMV) technology, as is illustrated by figs. 11 and 12, except using side direction interconnection structure 206 to increase except the quantity of passage between the upper strata packaging body of PoP encapsulating structure and lower floor's packaging body at lower floor's packaging body 200, the quantity of interconnecting channel can be improved equally by reducing TMV size/spacing.Penetrating metallic copper in molding via hole 215 at this is the mode adopting chemical plating, the full hole of electro-coppering successively or electroplate copper ring, consent technology is adopted when adopting plating copper ring, as shown in figure 11, play the effect supporting redistributing layer (RDL) 208, consent technology adopts carries out scolding tin or potting resin penetrating in molding via hole 215.Side direction interconnection structure 206 i.e. or rectangular centre circular along encapsulation unit outmost turns or partial center section gained.The object of partial center section is the adhesion in order to strengthen metal/resin and lower floor's capsulation material 201 in side direction interconnection structure 206.Resin major part clad metal copper ring in side direction interconnection structure 206 in Figure 11, to prevent metallic copper epoxidation.In Figure 12, in side direction interconnection structure 206, the material such as metal external application chemical plating tweezer gold or tweezer porpezite is coated, to prevent burning.
It should be noted that, because side direction interconnection structure 206 is synchronous with TMV hole 215 processing step, due to the easy balling-up characteristic of scolding tin under reflux technique, therefore side direction interconnection structure 206 consent can not use scolding tin.In Figure 11 and Figure 12,213 represent Surface Mount components and parts, as resistance, and electric capacity, inductance etc.214 represent scolding tin, for components and parts and underlying substrate 205 electric interconnection.
As is illustrated by figs. 11 and 12, except comprising lower floor's nude film 203, underlying substrate 205, lower floor's plastic packaging 201, the redistributing layer (RDL) 208 (redistributing layer 208 comprises metal level and dielectric layer) at plastic packaging top, side direction interconnection structure 206 and bottom ball grid array (BGA) soldered ball 207 in lower floor's packaging body 200, also comprise and multiplely penetrate molding via hole (TMV) 215, this penetrates molding via hole 215 and is formed under part or all of described interlayer soldered ball 107, and runs through redistributing layer 208 and lower floor's plastic packaging 201.In actual applications, all need not arrange a TMV 215 under each interlayer soldered ball 107, the quantity of interlayer soldered ball 107 can be greater than the quantity of TMV 215.
This penetrate in molding via hole 215 adopt chemical plating successively, electro-coppering or soldered ball fill, make interlayer soldered ball 107, redistributing layer 208 and penetrate molding via hole 215 to form interconnecting channel, realize the electric interconnection between this upper strata packaging body 100 and this lower floor's packaging body 200.
Penetrating metallic copper in molding via hole 215 at this is the mode adopting chemical plating, the full hole of electro-coppering successively or electroplate copper ring, consent technology is adopted when adopting plating copper ring, play the effect supporting redistributing layer (RDL) 208, consent technology adopts carries out scolding tin or potting resin penetrating in molding via hole 215.
Based on the stack package structure of the side direction interconnection that the invention described above provides, below the preparation method of the stack package structure that this side direction interconnects is described in detail.
As shown in figure 13, Figure 13 is the method flow diagram of the stack package structure of preparation side direction provided by the invention interconnection, and this stack package structure comprises upper strata packaging body and lower floor's packaging body, and the method comprises the following steps:
Steps A: make the upper strata packaging body that bottom has multiple interlayer soldered ball;
Step B: make lower floor's packaging body with redistributing layer and side direction interconnection structure, wherein, redistributing layer is formed at the top of lower floor's plastic packaging of this lower floor's packaging body, and side direction interconnection structure is formed at the surrounding of lower floor's plastic packaging of this lower floor's packaging body;
Step C: upper strata packaging body and lower floor packaging body are aimed at and welds, make multiple interlayer soldered ball, redistributing layer and side direction interconnection structure form interconnecting channel, and then form the stack package structure of side direction interconnection.
Wherein, make the upper strata packaging body that bottom has multiple interlayer soldered ball described in steps A, specifically comprise the following steps:
Step 1: adopt laminating technology or laminated process to manufacture top substrate layer, then top substrate layer section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 2: adopt that eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement is pasted method and is combined by conducting resinl or Heraeus with rectangular substrate by upper strata nude film;
Step 3: adopt supersonic bonding, thermocompression bonding or thermosonication bonding that upper strata nude film and rectangular substrate are carried out electric interconnection;
Step 4: adopt transfer formation technology, injection molding technology or preform technique to form upper strata plastic packaging around the nude film of upper strata, to protect upper strata nude film;
Step 5: plant ball at rectangular substrate bottom, forms multiple interlayer soldered ball; Wherein, the material that multiple interlayer soldered ball adopts is scolding tin, and between upper strata packaging body and lower floor's packaging body, adopts dishful to arrange or arrange in outer ring;
Step 6: rectangular substrate is cut into some upper stratas encapsulation unit, obtains the upper strata packaging body that bottom has multiple interlayer soldered ball.
Wherein, make lower floor's packaging body with redistributing layer and side direction interconnection structure described in step B, specifically comprise the following steps:
Step 11: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit.
Step 12: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate.
Step 13: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect lower floor's nude film;
In addition, the plastic package process of underfill described in molded underfill technique step of replacing 12 and step 13 can be adopted.
Step 14: adopt laser pit ablation lower floor plastic packaging, form the via hole for the formation of side direction interconnection structure; Wherein, when the via hole of formation is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
Step 15: adopt chemical plating, copper plating process successively to lower floor's plastic packaging with via hole, forms the metallization via hole of side direction interconnection structure, forms redistributing layer simultaneously on lower floor's plastic packaging by full for via hole plating copper;
Wherein, if redistributing layer adopts sandwich construction, then on lower floor's plastic packaging, form redistributing layer described in, comprising: adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
Step 16: rectangular for every bar substrate is cut into some lower layer package substrate unit with redistributing layer and side direction interconnection structure;
Step 17: the outside of metallic copper adopts chemical plating tweezer gold or tweezer porpezite clad copper in side direction interconnection structure, prevents metallic copper;
Step 18: adopt dishful arrangement or outer ring arrangement mode to plant ball in base plate for packaging unit bottom, and clean the residue solder in bottom land, obtain lower floor's packaging body with redistributing layer and side direction interconnection structure.
Wherein, make lower floor's packaging body with redistributing layer and side direction interconnection structure described in step B, specifically comprise the following steps:
Step 21: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit.
Step 22: at rectangular substrate surface attachment discrete device.
Step 23: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate.
Step 24: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect levels nude film;
In addition, the underfill described in molded underfill technique step of replacing 23 and step 24 plastic package process can also be adopted.
Step 25: adopt laser pit ablation lower floor plastic packaging, formed for the formation of side direction interconnection structure and the via hole penetrating molding via hole; Wherein, when the via hole of formation is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
Step 26: adopt chemical plating successively to lower floor's plastic packaging with via hole, electro-coppering becomes copper ring, forms side direction interconnection structure and penetrates the metallization via hole of molding; Adopt filling holes with resin technique to be filled up with the metallization via hole penetrating molding by test interconnection structure, play the effect supporting redistributing layer and prevent the burning of side direction interconnection structure copper; On lower floor's plastic packaging, form redistributing layer simultaneously;
Wherein, if redistributing layer adopts sandwich construction, then on lower floor's plastic packaging, form redistributing layer, comprising: adopt chemical plating, electro-coppering on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body;
Step 27: adopt dishful arrangement or outer ring arrangement mode to plant ball at rectangular substrate bottom, and clean the residue solder in bottom land;
Step 28: rectangular for every bar substrate is cut into some lower floor's encapsulation units with redistributing layer and side direction interconnection structure, obtains lower floor's packaging body with redistributing layer and side direction interconnection structure.
Wherein, make lower floor's packaging body with redistributing layer and side direction interconnection structure described in step B, specifically comprise the following steps:
Step 31: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit.
Step 32: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate.
Step 33: eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement pastes method by lower floor's nude film paster on rectangular substrate in employing, and adopts supersonic bonding, thermocompression bonding or thermosonication bonding that lower floor's nude film and rectangular substrate are carried out electric interconnection.
Step 34: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect levels nude film.
Step 35: adopt laser pit ablation lower floor plastic packaging, formed for the formation of side direction interconnection structure and the via hole penetrating molding via hole;
Wherein, when the via hole of formation is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
Step 36: chemical plating, copper plating process are adopted successively to lower floor's plastic packaging with via hole, what the full copper of via hole plating is formed side direction interconnection structure and the full copper of plating penetrates molding via hole, forms redistributing layer on lower floor's plastic packaging simultaneously;
Wherein, if redistributing layer adopts sandwich construction, then on lower floor's plastic packaging, form redistributing layer, comprising: adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
Step 37: rectangular for every bar substrate is cut into some lower layer package substrate unit with redistributing layer and side direction interconnection structure;
Step 38: the outside of metallic copper adopts chemical plating tweezer gold or tweezer porpezite clad copper in side direction interconnection structure, prevents metallic copper;
Step 39: adopt dishful arrangement or outer ring arrangement mode to plant ball in base plate for packaging unit bottom, and clean the residue solder in bottom land, obtain lower floor's packaging body with redistributing layer and side direction interconnection structure.
Embodiment 1
In the present embodiment, all only contain upper strata nude film in upper strata packaging body and lower floor's packaging body, not containing discrete device, the lower floor of lower floor's packaging body does not have TMV in sealing and moulding yet.
1.1, as shown in figure 14, the preparation technology of upper strata packaging body is specific as follows:
Step 1: top substrate layer manufacture; The conventional base plate such as laminating technology or laminated process (bulid-up)/PCB technology is adopted to manufacture top substrate layer, then top substrate layer section is formed rectangular substrate (strip) for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit.
Step 2: paster; Upper strata nude film is fixed on top substrate layer, adopts that such as eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement pastes the pasting methods such as method.
Step 3: wire bonding; Upper strata nude film and top substrate layer are carried out electric interconnection; Wire Bonding Technology is the conventional method of circuit interconnection between nude film and encapsulating structure, and experience is burnt ball-> pressure welding-> bracing wire-> broken line-> welding-> broken string-> and completed several critical process step.Main Wire Bonding Technology has; Supersonic bonding (Ultrasonic Bonding, U/S Bonding), thermocompression bonding (Thermocompression Bonding, T/C Bonding) and thermosonication bonding (Thermosonic Bonding, T/S Bonding) three kinds.
Step 4: plastic packaging; Around the nude film of upper strata, form upper strata plastic packaging, play the effect of protection upper strata nude film; The forming technique of Plastic Package has multiple, comprise transfer formation technology (Transfer Molding), injection molding technology (Inject Molding), preform technique (Premolding) etc., but topmost forming technique is transfer formation technology.
Step 5: plant ball: plant ball bottom top substrate layer, forms multiple interlayer soldered ball; Interlayer soldered ball can adopt dishful to arrange or outer ring arrangement as required; Residue solder in bottom land also to clean in-> bottom land print fluxing (or soldering paste)-> and adopts and plant ball device and plant several critical process step such as ball-> reflow soldering-> detection.
Step 6: section: rectangular for every bar substrate is cut into some upper stratas encapsulation unit along upper strata packaging body unit housing.
1.2, as shown in figure 15, the preparation technology of lower floor's packaging body is specific as follows:
Step 7: underlying substrate manufacture; The conventional base plate such as laminating technology or laminated process (bulid-up)/PCB technology is adopted to manufacture underlying substrate, then underlying substrate section is formed rectangular (strip) substrate and be used for subsequent encapsulating process, every bar strip substrate contains several encapsulation unit.
Step 8: face-down bonding: lower floor's nude film is faced down and is placed on underlying substrate, lower floor's nude film is faced down, lower floor's nude film welding zone and substrate welding zone Direct Bonding.Face-down bonding mainly contains pickup nude film-> Printing Paste or conducting resinl-> face-down bonding (being placed with chip)-> Reflow Soldering or hot curing (or ultra-violet curing) several committed step.
Step 9: underfill (underfill): after lower floor's nude film face-down bonding; epoxide resin material is injected into protect pad between lower floor's nude film and substrate, by curing oven cured epoxy resin for the soldered ball between lower floor's nude film and substrate provides structural support.
Step 10: plastic packaging: form lower floor's plastic packaging around lower floor's nude film, plays the effect of protection levels nude film; The forming technique of Plastic Package has multiple, comprise transfer formation technology (TransferMolding), injection molding technology (Inject Molding), preform technique (Premolding) etc., but topmost forming technique is transfer formation technology.
Also molded underfill (MUF) technique can be adopted to replace the operation of underfill (underfill) and plastic packaging, thus remove the underfill process eliminated in lower filler 209 and step 9.
Step 11: laser pit, forms the via hole for the formation of side direction interconnection structure: after lower floor is encapsulated in plastic package process, adopts laser ablation molding compounds needing the position of side direction interconnection structure 206.When side direction interconnection structure is quadrangle via hole, continuous pit technique can be adopted to be formed, and namely quadrangle via hole four limit is not desirable straight line.
Step 12: form side direction interconnect metallization and form redistributing layer (RDL): first adopting chemical plating, the metals such as plating Cu form side direction interconnection structure metal level (plating is full), first layer metal layer (M1 the layer)-> simultaneously forming RDL exposes, M1 layer pattern-> laminating media layer-> laser drilling the blind hole having etched RDL forms RDL interlayer blind hole-> chemical plating, the metals such as plating Cu are formed in hole and the M2 metal level-> of RDL exposes, etch the M2 metallic layer graphic of RDL (when M2 is outermost metal layer, form patterned pad, interconnect with upper strata packaging body 107), lower floor's plastic packaging 201 top multilayer RDL208 is formed and repeats above technique.
Step 13: section: rectangular for every bar substrate is cut into some lower layer package substrate unit along lower floor's packaging body unit housing, forms lower floor's package-side to interconnection structure 206 simultaneously.Lower floor's packaging body housing position overlaps with side direction interconnection structure middle position or inclined outward.The object of partial center section is the adhesion in order to strengthen metal and lower floor's capsulation material 201 in side direction interconnection structure 206.
Step 14: protection against oxidation: in side direction interconnection structure 206, the material such as metal external application chemical plating tweezer gold or tweezer porpezite is coated, prevents burning.
Step 15: plant ball: plant ball bottom underlying substrate, can adopt dishful to arrange or outer ring arrangement as required; Residue solder in bottom land also to clean in-> bottom land print fluxing (or soldering paste)-> and adopts and plant ball device and plant several critical process step such as ball-> reflow soldering-> detection.
1.3, by the pad alignment reflow soldering of redistributing layer in upper strata packaging body and lower floor's packaging body, the stack package structure of side direction interconnection is formed.
Embodiment 2
In the present embodiment, upper strata packaging body, only containing upper strata nude film, does not contain discrete device; Lower floor's packaging body contains upper strata nude film and discrete device, and the lower floor of lower floor's packaging body envelope also contains TMV in moulding.
2.1, as shown in figure 16, packaging body preparation technology is identical at the middle and upper levels for preparation technology and Figure 13 of upper strata packaging body, just repeats no more here.
2.2, as shown in figure 16, the preparation technology of lower floor's packaging body is specific as follows:
Step 16: underlying substrate manufacture: adopt the conventional base plate such as laminating technology or laminated process (bulid-up)/PCB technology to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit.
Step 17: surface mount discrete device: adopted by discrete device surface mount (SMT) technique to be welded on underlying substrate.Surface mount process mainly contains silk-screen (or some glue)-> and mounts a few part compositions such as (solidification)-> reflow soldering-> cleaning-> detection.
Step 18: face-down bonding: lower floor's nude film is faced down and is placed on underlying substrate, lower floor's nude film is faced down, lower floor's nude film welding zone and substrate welding zone Direct Bonding.Face-down bonding mainly contains pickup nude film-> Printing Paste or conducting resinl-> face-down bonding (being placed with chip)-> Reflow Soldering or hot curing (or ultra-violet curing) several committed step.
Step 19: underfill (underfill): after lower floor's nude film face-down bonding; adopt underfill process; be injected into protect pad between lower floor's nude film and underlying substrate, by curing oven cured epoxy resin for the soldered ball between lower floor's nude film and underlying substrate provides structural support by epoxide resin material.
Step 20: plastic packaging; Around lower floor's nude film or discrete device, form lower floor's plastic packaging, play the effect of protection lower floor's nude film or discrete device; The forming technique of Plastic Package has multiple, comprise transfer formation technology (Transfer Molding), injection molding technology (Inject Molding), preform technique (Premolding) etc., but topmost forming technique is transfer formation technology.
Also molded underfill (MUF) technique can be adopted to replace the operation of underfill (underfill) and plastic packaging, thus remove the lower filler 209 of elimination and omit underfill process in step 20.
Step 21: laser pit, forms the via hole for the formation of side direction interconnection structure and TMV: after lower floor is encapsulated in plastic package process, adopts laser ablation molding compounds in the position and TMV 215 position needing side direction interconnection structure 206.When side direction interconnection structure is quadrangle via hole, continuous pit technique can be adopted to be formed, and namely quadrangle via hole four limit is not desirable straight line.
Step 22: form side direction interconnect metallization, consent and formation redistributing layer (RDL): first adopt chemical plating, the metals such as plating Cu form side direction interconnection structure 206 metal level (copper ring), TMV215 metal level, first layer metal layer (M1 the layer)-> tin ball/resin consent-> simultaneously forming RDL exposes, M1 layer pattern-> laminating media layer-> laser drilling the blind hole having etched RDL forms RDL interlayer blind hole-> chemical plating, the metals such as plating Cu are formed in hole and the M2 metal level-> of RDL exposes, etch the M2 metallic layer graphic of RDL (when M2 is outermost metal layer, form patterned pad, interconnect with upper strata packaging body 107).Lower floor's plastic packaging 201 top multilayer RDL208 is formed and repeats above technique.
It is to be noted that due to side direction interconnection structure 206 and TMV 215 processing step synchronous, due to the easy balling-up characteristic of scolding tin under reflux technique, therefore side direction interconnection structure consent can not use scolding tin, and TMV adopts tin ball/resin consent.
Step 23: plant ball: plant ball bottom underlying substrate, can adopt dishful to arrange or outer ring arrangement as required; Residue solder in bottom land also to clean in-> bottom land print fluxing (or soldering paste)-> and adopts and plant ball device and plant several critical process step such as ball-> reflow soldering-> detection.
Step 24: section: rectangular for every bar substrate is cut into some lower floors encapsulation unit along lower floor's packaging body unit housing, forms lower floor's package-side to interconnection structure 206 simultaneously.Lower floor's packaging body housing position overlaps with side direction interconnection structure middle position or inclined outward.The object of partial center section is the adhesion in order to strengthen metal and lower floor's capsulation material 201 in side direction interconnection structure 206.Section rear side, to resin major part clad metal in interconnection structure 206, can prevent burning in side direction interconnection structure 206.
It should be noted that, be first cut into slices to replant ball in above-mentioned 1.2, is first plant ball to cut into slices in 2.2 herein again, main when considering to adopt tweezer porpezite or the anti-oxidation technique of tweezer gold to side direction interconnection structure, if first plant ball, soldered ball can be gone up nickel coating porpezite or tweezer gold.But during with resin portion protection side direction interconnection structure, cut into slices after first planting ball.In fact cut into slices after first planting ball more efficient.
2.3, by the pad alignment reflow soldering of redistributing layer in upper strata packaging body and lower floor's packaging body, the stack package structure of side direction interconnection is formed.
Embodiment 3
In the present embodiment, upper strata packaging body, only containing upper strata nude film, does not contain discrete device; Lower floor's packaging body is only containing upper strata nude film, and not containing discrete device, and the lower floor of lower floor's packaging body envelope also contains TMV in moulding.
3.1, as shown in figure 17, packaging body preparation technology is identical at the middle and upper levels for preparation technology and Figure 13 of upper strata packaging body, just repeats no more here.
3.2, as shown in figure 17, the preparation technology of lower floor's packaging body is specific as follows:
Step 25: underlying substrate manufacture; Adopt the conventional base plate such as laminating technology or laminated process (bulid-up)/PCB technology to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit.
Step 26: face-down bonding and underfill:
Face-down bonding: lower floor's nude film is faced down and is placed on underlying substrate, lower floor's nude film is faced down, lower floor's nude film welding zone and substrate welding zone Direct Bonding.Face-down bonding mainly contains pickup nude film-> Printing Paste or conducting resinl-> face-down bonding (being placed with chip)-> Reflow Soldering or hot curing (or ultra-violet curing) several committed step.
Underfill: after lower floor's nude film face-down bonding; adopt underfill process; be injected into protect pad between lower floor's nude film and underlying substrate, by curing oven cured epoxy resin for the soldered ball between lower floor's nude film and underlying substrate provides structural support by epoxide resin material.
Step 27: paster and wire bonding; Lower floor's nude film is fixed on underlying substrate, adopts that such as eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement pastes the pasting methods such as method.
Lower floor's nude film and underlying substrate are carried out electric interconnection; Wire Bonding Technology is the conventional method of circuit interconnection between nude film and encapsulating structure, and experience is burnt ball-> pressure welding-> bracing wire-> broken line-> welding-> broken string-> and completed several critical process step.Main Wire Bonding Technology has; Supersonic bonding (UltrasonicBonding, U/S Bonding), thermocompression bonding (Thermocompression Bonding, T/CBonding), thermosonication bonding (Thermosonic Bonding, T/S Bonding) three kinds.
It should be noted that, in step 26, lower floor's nude film is faced down face-down bonding on underlying substrate with by paster, lower floor's nude film is fixed on underlying substrate in step 27, because You Liangge lower floor nude film, first finish the FC+ underfill of lower floor's nude film, the paster+WB of Zai Zuo another one lower floor nude film.
Step 28: plastic packaging; Around lower floor's nude film, form lower floor's plastic packaging, play the effect of protection lower floor nude film; The forming technique of Plastic Package has multiple, comprise transfer formation technology (Transfer Molding), injection molding technology (Inject Molding), preform technique (Premolding) etc., but topmost forming technique is transfer formation technology.
Also molded underfill (MUF) technique can be adopted to replace the operation of underfill (underfill) and plastic packaging, thus remove the underfill process eliminated in lower filler 209 and step 26.
Step 29: laser pit, forms the via hole for the formation of side direction interconnection structure and TMV: after lower floor is encapsulated in plastic package process, adopts laser ablation molding compounds in the position and TMV 215 position needing side direction interconnection structure 206.When side direction interconnection structure is quadrangle via hole, continuous pit technique can be adopted to be formed, and namely quadrangle via hole four limit is not desirable straight line.
Step 30: form side direction interconnect metallization and form redistributing layer (RDL): first adopting chemical plating, the metals such as plating Cu form side direction interconnection structure 206 metal level, TMV215 metal level (plating is full), first layer metal layer (M1 the layer)-> simultaneously forming RDL exposes, M1 layer pattern-> laminating media layer-> laser drilling the blind hole having etched RDL forms RDL interlayer blind hole-> chemical plating, the metals such as plating Cu are formed in hole and the M2 metal level-> of RDL exposes, etch the M2 metallic layer graphic of RDL (when M2 is outermost metal layer, form patterned pad, interconnect with upper strata packaging body 107.The formation of lower floor's plastic packaging 201 top multilayer RDL208 is the above technique of repetition.
Step 31: section: every bar strip substrate is cut into some lower layer package substrate unit along lower floor's packaging body unit housing, forms lower floor's package-side to interconnection structure 206 simultaneously.Lower floor's packaging body housing position overlaps with side direction interconnection structure middle position or inclined outward.The object of partial center section is the adhesion in order to strengthen metal and lower floor's capsulation material 201 in side direction interconnection structure 206.
Step 32: protection against oxidation: in side direction interconnection structure 206, the material such as metal external application chemical plating tweezer gold or tweezer porpezite is coated, prevents burning.
Step: 33: plant ball: plant ball bottom underlying substrate, can adopt dishful to arrange or outer ring arrangement as required; Residue solder in bottom land also to clean in-> bottom land print fluxing (or soldering paste)-> and adopts and plant ball device and plant several critical process step such as ball-> reflow soldering-> detection.
3.3, by the pad alignment reflow soldering of redistributing layer in upper strata packaging body and lower floor's packaging body, the stack package structure of side direction interconnection is formed.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (28)
1. a preparation method for the stack package structure of side direction interconnection, this stack package structure comprises upper strata packaging body and lower floor's packaging body, and it is characterized in that, the method comprises:
Make the upper strata packaging body that bottom has multiple interlayer soldered ball;
Make lower floor's packaging body with redistributing layer and side direction interconnection structure, wherein, redistributing layer is formed at the top of lower floor's plastic packaging of this lower floor's packaging body, and side direction interconnection structure is formed at the surrounding of lower floor's plastic packaging of this lower floor's packaging body;
Upper strata packaging body and lower floor packaging body are aimed at and welds, make multiple interlayer soldered ball, redistributing layer and side direction interconnection structure form interconnecting channel, and then form the stack package structure of side direction interconnection.
2. preparation method according to claim 1, is characterized in that, described making bottom has the upper strata packaging body of multiple interlayer soldered ball, comprising:
Step 1: adopt laminating technology or laminated process to manufacture top substrate layer, then top substrate layer section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 2: adopt that eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement is pasted method and is combined by conducting resinl or Heraeus with rectangular substrate by upper strata nude film;
Step 3: adopt supersonic bonding, thermocompression bonding or thermosonication bonding that upper strata nude film and rectangular substrate are carried out electric interconnection;
Step 4: adopt transfer formation technology, injection molding technology or preform technique to form upper strata plastic packaging around the nude film of upper strata, to protect upper strata nude film;
Step 5: plant ball at rectangular substrate bottom, forms multiple interlayer soldered ball;
Step 6: rectangular substrate is cut into some upper stratas encapsulation unit, obtains the upper strata packaging body that bottom has multiple interlayer soldered ball.
3. preparation method according to claim 2, is characterized in that, the material that multiple interlayer soldered ball described in step 5 adopts is scolding tin, and between upper strata packaging body and lower floor's packaging body, adopts dishful to arrange or arrange in outer ring.
4. preparation method according to claim 1, is characterized in that, described making has lower floor's packaging body of redistributing layer and side direction interconnection structure, comprising:
Step 11: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 12: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate;
Step 13: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect lower floor's nude film;
Step 14: adopt laser pit ablation lower floor plastic packaging, form the via hole for the formation of side direction interconnection structure;
Step 15: adopt chemical plating, copper plating process successively to lower floor's plastic packaging with via hole, forms the metallization via hole of side direction interconnection structure, forms redistributing layer simultaneously on lower floor's plastic packaging by full for via hole plating copper;
Step 16: rectangular for every bar substrate is cut into some lower layer package substrate unit with redistributing layer and side direction interconnection structure;
Step 17: the outside of metallic copper adopts chemical plating tweezer gold or tweezer porpezite clad copper in side direction interconnection structure, prevents metallic copper;
Step 18: adopt dishful arrangement or outer ring arrangement mode to plant ball in base plate for packaging unit bottom, and clean the residue solder in bottom land, obtain lower floor's packaging body with redistributing layer and side direction interconnection structure.
5. preparation method according to claim 4, is characterized in that, adopts the underfill described in molded underfill technique step of replacing 12 and the plastic package process described in step 13.
6. preparation method according to claim 4, is characterized in that, when the via hole formed described in step 14 is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
7. preparation method according to claim 4, is characterized in that, described redistributing layer adopts sandwich construction, forms redistributing layer, comprising described in step 15 on lower floor's plastic packaging:
Adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
8. preparation method according to claim 1, is characterized in that, described making has lower floor's packaging body of redistributing layer and side direction interconnection structure, comprising:
Step 21: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 22: at rectangular substrate surface attachment discrete device;
Step 23: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, be the stress and strain that minimizing nude film causes because thermal coefficient of expansion is different from rectangular substrate by curing oven cured epoxy resin;
Step 24: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect levels nude film;
Step 25: adopt laser pit ablation lower floor plastic packaging, formed for the formation of side direction interconnection structure and the via hole penetrating molding via hole;
Step 26: lower floor's plastic packaging with via hole is adopted to chemical plating successively, electroplates into copper ring, forms side direction interconnection structure and the metallization via hole penetrating molding; Adopt filling holes with resin technique to be filled up with the metallization via hole penetrating molding by test interconnection structure, play the effect supporting redistributing layer and prevent the burning of side direction interconnection structure copper; On lower floor's plastic packaging, form redistributing layer simultaneously;
Step 27: adopt dishful arrangement or outer ring arrangement mode to plant ball at rectangular substrate bottom, and clean the residue solder in bottom land;
Step 28: rectangular for every bar substrate is cut into some lower floor's encapsulation units with redistributing layer and side direction interconnection structure, obtains lower floor's packaging body with redistributing layer and side direction interconnection structure.
9. preparation method according to claim 8, is characterized in that, adopts the underfill described in molded underfill technique step of replacing 23 and the plastic package process described in step 24.
10. preparation method according to claim 8, is characterized in that, when the via hole formed described in step 25 is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
11. preparation methods according to claim 8, is characterized in that, described redistributing layer adopts sandwich construction, forms redistributing layer, comprising described in step 26 on lower floor's plastic packaging:
Adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
12. preparation methods according to claim 1, is characterized in that, described making has lower floor's packaging body of redistributing layer and side direction interconnection structure, comprising:
Step 31: adopt laminating technology or laminated process to manufacture underlying substrate, then underlying substrate section is formed rectangular substrate and be used for subsequent encapsulating process, the rectangular substrate of every bar contains several encapsulation unit;
Step 32: face down lower floor's nude film nude film welding zone and rectangular substrate welding zone Direct Bonding; And through underfill process, epoxide resin material is injected into protect pad between lower floor's nude film and rectangular substrate, by curing oven cured epoxy resin, for reducing the stress and strain that nude film causes because thermal coefficient of expansion is different from rectangular substrate;
Step 33: eutectic pastes method, method is pasted in welding, method pasted by conducting resinl or glass cement pastes method by lower floor's nude film paster on rectangular substrate in employing, and adopts supersonic bonding, thermocompression bonding or thermosonication bonding that lower floor's nude film and rectangular substrate are carried out electric interconnection;
Step 34: adopt transfer formation technology, injection molding technology or preform technique to form lower floor's plastic packaging around lower floor's nude film, to protect levels nude film;
Step 35: adopt laser pit ablation lower floor plastic packaging, formed for the formation of side direction interconnection structure and the via hole penetrating molding via hole;
Step 36: chemical plating, copper plating process are adopted successively to lower floor's plastic packaging with via hole, what the full copper of via hole plating is formed side direction interconnection structure and the full copper of plating penetrates molding via hole, forms redistributing layer on lower floor's plastic packaging simultaneously;
Step 37: rectangular for every bar substrate is cut into some lower layer package substrate unit with redistributing layer and side direction interconnection structure;
Step 38: the outside of metallic copper adopts chemical plating tweezer gold or tweezer porpezite clad copper in side direction interconnection structure, prevents metallic copper;
Step 39: adopt dishful arrangement or outer ring arrangement mode to plant ball in base plate for packaging unit bottom, and clean the residue solder in bottom land, obtain lower floor's packaging body with redistributing layer and side direction interconnection structure.
13. preparation methods according to claim 12, is characterized in that, when the via hole formed described in step 34 is quadrangle via hole, adopt continuous laser pit technique ablation lower floor plastic packaging, namely quadrangle via hole four limit is not desirable straight line.
14. preparation methods according to claim 12, is characterized in that, described redistributing layer adopts sandwich construction, forms redistributing layer, comprising described in step 36 on lower floor's plastic packaging:
Adopt chemical plating, copper plating process on lower floor's plastic packaging, form the first layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the first layer metal layer pattern of redistributing layer, then laminating media layer is adopted successively, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the second layer metal layer of redistributing layer successively; Then adopt exposure successively, etch the second layer metal layer pattern of redistributing layer, followed by lamination dielectric layer, laser drilling blind hole forms the interlayer blind hole of redistributing layer, then adopts chemical plating, plated metal process for copper to be formed in hole and the third layer metal level of redistributing layer successively; By that analogy, repeat above formation second layer metal layer or third layer metal layer process, form the more metal layers of redistributing layer; After formation outermost metal layer, form patterned pad, interconnect with upper strata packaging body.
15. preparation methods according to claim 1, it is characterized in that, described side direction interconnection structure connects the metal level in described redistributing layer, under connect the underlying substrate of described lower floor packaging body, be circular vias or the quadrangle via hole formed by circular vias platoon, adopt chemical plating in the vias successively, plating is filled with metallic copper, section forms discrete half via hole, mostly via structure or cube structure.
16. preparation methods according to claim 15, is characterized in that, the metal material in described side direction interconnection structure is all coated or most of coated by resin, tweezer gold or tweezer porpezite, to prevent metal material oxidized.
17. preparation methods according to claim 15, it is characterized in that, described redistributing layer is made up of metal level and dielectric layer, metal level is used for realizing electric interconnection, and dielectric layer is used for realizing isolation or zone isolation between interconnection line.
18. preparation methods according to claim 17, is characterized in that, described redistributing layer comprises single-layer metal or multiple layer metal.
19. preparation methods according to claim 1, is characterized in that,
Described upper strata packaging body comprises top substrate layer, upper strata nude film and upper strata plastic packaging, wherein: described upper strata nude film is formed on top substrate layer, upper strata nude film is combined by conducting resinl or Heraeus with top substrate layer, or adopts wire bonding or flip chip bonding mode to combine; Described upper strata plastic packaging is centered around around the nude film of upper strata, for the protection of upper strata nude film;
Described lower floor packaging body comprises underlying substrate, lower floor's nude film, lower floor's plastic packaging, redistributing layer, side direction interconnection structure and bottom ball grid array soldered ball, wherein: described lower floor nude film is formed on underlying substrate, lower floor's nude film is combined by conducting resinl or Heraeus with underlying substrate, or adopts wire bonding or flip chip bonding mode to combine; Described lower floor plastic packaging is centered around around lower floor's nude film, and for the protection of lower floor's nude film, and support-side is to interconnection structure; Described bottom ball grid array soldered ball is formed under underlying substrate, for realizing the electric interconnection between lower floor's packaging body and PCB substrate.
20. preparation methods according to claim 19, it is characterized in that, containing multiple upper stratas thermal hole in described top substrate layer, containing multiple lower floors thermal hole in described underlying substrate, the single-layer metal that this upper strata thermal hole comprises with interlayer soldered ball, redistributing layer successively or multiple layer metal, side direction interconnection structure and lower floor's thermal hole, form the 3D heat dissipation channel of this stack package structure.
21. preparation methods according to claim 19, is characterized in that, during stratum conducting in described redistributing layer and described side direction interconnection structure and described underlying substrate, can form electromagnetic shielding, for the electromagnetic isolation of lower floor's nude film.
22. preparation methods according to claim 19, is characterized in that, described lower floor packaging body also comprises and multiplely penetrates molding via hole, and this penetrates molding via hole and is formed under part or all of described interlayer soldered ball, runs through redistributing layer and lower floor's plastic packaging.
23. preparation methods according to claim 22, it is characterized in that, penetrate in molding via hole adopt chemical plating, the full hole of electro-coppering or plating copper ring successively at this, make interlayer soldered ball, redistributing layer and penetrate molding via hole to form interconnecting channel, realize the electric interconnection between this upper strata packaging body and this lower floor's packaging body.
24. preparation methods according to claim 23, is characterized in that, describedly to penetrate in molding via hole metallic copper and adopt consent technology at this for during plating copper ring, play the effect supporting redistributing layer.
25. preparation methods according to claim 24, is characterized in that, described consent technology adopts carries out scolding tin or potting resin penetrating in molding via hole.
26. preparation methods according to claim 19, it is characterized in that, described upper strata nude film or described lower floor nude film at least one, when for time multiple, described upper strata nude film adopt stacking, tiling, embedded or in the mode of burying be arranged on top substrate layer, described lower floor nude film adopt stacking, tiling, embedded or in the mode of burying be arranged on underlying substrate.
27. preparation methods according to claim 26, it is characterized in that, described upper strata nude film adopts gold thread, copper cash or silver-colored line to realize electric interconnection with the interconnection line in top substrate layer and via hole, and the interconnection line in described lower floor nude film employing controlled collapse chip connection salient point or copper pillar bump and underlying substrate and via hole realize electric interconnection.
28. preparation methods according to claim 26, is characterized in that, described upper strata nude film or described lower floor nude film adopt discrete device to substitute.
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