CN104482964B - Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor - Google Patents
Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor Download PDFInfo
- Publication number
- CN104482964B CN104482964B CN201410779711.3A CN201410779711A CN104482964B CN 104482964 B CN104482964 B CN 104482964B CN 201410779711 A CN201410779711 A CN 201410779711A CN 104482964 B CN104482964 B CN 104482964B
- Authority
- CN
- China
- Prior art keywords
- wind speed
- sensor unit
- pad
- direction sensor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses an integrated high-accuracy boronized semiconductor heating wind speed and direction sensor, is applied to the field of wind speed and direction measurement, and aims to solve the problems of higher environmental temperature and humidity influence rate, changes of working temperature along with the environment, low accuracy, large size, high cost and the like of a conventional wind speed and direction sensor. The integrated high-accuracy boronized semiconductor heating wind speed and direction sensor is characterized by mainly comprising a silicon substrate, a silicon dioxide insulating layer, a boronized semiconductor heating body, a boronized semiconductor heating body welding plate, a wind velocity and direction sensor unit welding plate, a semiconductor heating electrode, an aluminium oxide insulation layer, a window velocity and direction sensor unit, an environment temperature and humidity sensor unit, a heating body temperature sensor unit, a connecting wire and a groove. According to the integrated high-accuracy boronized semiconductor heating wind speed and direction sensor, the bonorized semiconductor heating body is arranged in the integrated high-accuracy boronized semiconductor heating wind speed and direction sensor, and proper working temperature can be provided for the sensor, so that the accuracy is improved; by a cantilever beam structure, the waste of heat can be greatly reduced; with the application of an MEMS (Micro Electro Mechanical System) technology, the size of the sensor can be reduced, and the cost of the sensor can be lowered.
Description
Technical field
The present invention relates to the field of high accuracy wind speed wind direction sensor and its structure
Background technology
Wind resource refers to the kinetic energy resource that air flows along earth surface and produces, ubiquitous, is available for people and utilizes.Wind
The measurement of the fast wind direction aspect such as in terms of weather forecast, Environment measure and control has important Research Significance and using value.
In recent years, gradually increasing due to natural calamity, status also more and more higher in people for the meteorological detection, epidemic disaster in environment
E measurement technology relative maturity, therefore focus of concern is become to the measurement of wind speed and direction, thus to wind speed and direction
The requirement of sensor is also with regard to more and more higher.Traditional measuring method mainly measures wind speed with vane, measures wind direction with weathercock,
These mechanical devices not only volume larger and also need running check safeguard, need to expend substantial amounts of manpower and materials.With MEMS
The development of technology, develops silicon type thin film sensor and silicon suspension beam type sensor now again, and both sensor bulk reduce, valency
Lattice reduce, but change because the working environment of sensor changes with external environment, and error is larger, precision is relatively low.
A kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor of the present invention solves the sensor
Problem, using MEMS technology, whole sensor construction volume is little, lightweight, price is low.Have inside this sensor construction and ooze B
Semiconductor calandria, can provide operating temperature the most suitable for each sensor unit, the beam type structure of this sensor can simultaneously
Greatly reduce scattering and disappearing, reducing power consumption, improve capacity usage ratio of heat.The real-time detection realizing wind speed and direction is had great
Research Significance and using value.
Content of the invention
The present invention is to be affected larger, operating temperature with ring for solving existing wind speed wind direction sensor by environment epidemic disaster
Border change, precision is low, volume greatly, high cost the problems such as, and propose a kind of ooze the high accuracy wind speed and direction collection that B semiconductor heats
Become sensor.
A kind of ooze B semiconductor heating high accuracy wind speed and direction integrated sensor it is characterised in that：It is by silicon base
(1), silicon dioxide insulating layer (2), ooze B semiconductor calandria (3), ooze B semiconductor calandria pad, wind speed wind direction sensor list
First pad, semiconductor heat electrode, alumina insulating layer (7), wind speed wind direction sensor unit, environment humidity sensor, add
Hot temperature sensor unit (10), connecting line (11) and groove composition；Further：First aoxidize life in silicon base (1) upper surface
Become layer of silicon dioxide insulating barrier (2), an octagon is generated in silicon base (1) by photoetching, ion implantation technique
Ooze B semiconductor calandria (3), further：Oozing B semiconductor calandria (3), silicon dioxide insulating layer (2) is upper is splashed by magnetic control
Technology of penetrating generates oozes B semiconductor calandria pad, wind speed wind direction sensor unit pad and semiconductor heating electrode, further：
Reuse magnetron sputtering technique, in silicon dioxide insulating layer (2), ooze on B semiconductor calandria (3) and semiconductor heating electrode
Generate alumina insulating layer (7), and expose and ooze B semiconductor calandria pad and wind speed wind direction sensor unit pad, further：
Using magnetron sputtering technique, it is correspondingly formed certain on oozing B semiconductor calandria pad and wind speed wind direction sensor unit pad
The pad of thickness, makes pad upper surface concordant with alumina insulating layer (7) upper surface, further：Oozing the weldering of B semiconductor calandria
On disk, wind speed wind direction sensor unit pad, alumina insulating layer (7), formed using magnetron sputtering technique and ooze the heating of B semiconductor
Body pad, wind speed wind direction sensor unit pad, wind speed wind direction sensor unit, environment temperature and relative humidity, heating temperature
Sensor unit (10) and connecting line (11), finally carry out hollow processing, first alumina insulating layer is carried out with hollow out and forms groove
One (12-1), groove two (12-2), groove three (12-3), groove four (12-4), then hollow out shape is carried out to silicon dioxide insulating layer
Become groove five (12-5), groove six (12-6), groove seven (12-7), groove eight (12-8), then hollow out shape is carried out to silicon base
Become groove nine (12-9), groove ten (12-10), groove 11 (12-11), groove 12 (12-12), the finally lower surface to silicon
Carry out hollow out, form groove 13 (12-13), connecting line (11) comprises 11 connecting lines between sensor unit and pad,
So far, form a kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor.
This sensor construction is realized by following steps.
Step one：Preparing crystal orientation is (100), 8000 × 8000 × (200～300) μm3Silicon chip as substrate, clean base
The surface at bottom.
Step 2：In the method by dry oxygen-wet oxygen-dry oxygen alternating oxidation for the upper surface of silicon, grow layer of silicon dioxide
Insulating barrier, a size of 8000 × 8000 × (2～5) μm3.
Step 3：On silicon dioxide insulating layer, B technology is oozed by photoetching technique and plasma, forming the length of side is 2000
μm octagon ooze B semiconductor calandria, then the semiconductor calandria oxygen by " annealing " mode of oxidizing formation thin layer
Change layer.
Step 4：By magnetron sputtering technique, ooze with oozing sputtering generation on B semiconductor calandria in silicon dioxide insulating layer
B semiconductor calandria pad, wind speed wind direction sensor unit pad, semiconductor heating electrode, thickness is impartial, is 2～4 μm, and
Expose and ooze B semiconductor calandria pad, wind speed wind direction sensor unit pad.
Step 5：Pass through magnetron sputtering technique again, sputter one layer of aluminium, oxidized rear a layer thickness that formed is 5～6 μm of oxidations
Aluminum insulation layer, and expose and ooze B semiconductor calandria pad and wind speed wind direction sensor unit pad.
Step 6：On alumina insulating layer, adopt magnetron sputtering technique again, first generate thickness be 5～6 μm ooze B half
Conductor calandria pad and wind speed wind direction sensor unit pad, then sputter generate thickness be 2～4 μm ooze B semiconductor heating
Body pad, wind speed wind direction sensor unit pad, wind speed wind direction sensor unit, environment humidity sensor, heating temperature
Sensor unit and connecting line.
Step 7：After overall structure is formed, use hydrochloric acid, HF acid and EPW corrosive agent respectively to alumina insulating layer, titanium dioxide
Silicon insulating barrier and silicon base are from just in the face of structure is corroded, then silicon base are corroded from the back side with EPW corrosive agent, are formed
Groove, obtains a kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor.
Advantages of the present invention is：A kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor, can be by oozing B
Semiconductor calandria heats to sensor, and the technology that this semiconductor element converts electrical energy into heat energy is 20th century 80
The new heating technique that age grows up, has homogeneous heating, does not have hot-spot compared to traditional mode of heating
The advantages such as phenomenon, firing rate are fast, firing rate is easily controlled, capacity usage ratio height；Middle heating temperature sensor can be real
When detection sensor operating temperature, be easy to real-time control, provide suitable operating temperature for each sensor unit, improve this biography
The precision of sensor；A kind of beam type structure can greatly reduce scattering and disappearing of heat, reduces power consumption, energy saving；Sensor right
Claim design, the error that external environment is brought can be reduced, improve the degree of accuracy of measurement；The interpolation of temperature and relative humidity, can be follow-up
Data processing circuit provides measurement parameter, carries out epidemic disaster self compensation calculating；By MEMS technology, this sensor bulk can be made
Reduction, weight saving, price reduction, integrated level uprise.
Brief description
Fig. 1 is a kind of construction diagrams of the wind speed and direction integrated sensor oozing the heating of B semiconductor.
Fig. 2 is a kind of preparation flow schematic diagram of the wind speed and direction integrated sensor oozing the heating of B semiconductor.
Fig. 3 is the A-A ' profile of (f) in Fig. 2.
Fig. 4 is the schematic bottom view of (f) in Fig. 2.
Fig. 5 is the top view that 11 sensor units are distributed on the insulating layer.
The top view that Fig. 6 is 11 sensor units, all connecting lines, 20 pads are distributed on the insulating layer.
Fig. 7 is the top view of a kind of wind speed and direction integrated sensor pad oozing the heating of B semiconductor and heating electrode.
Specific embodiment
Specific embodiment one：Ooze B semiconductor calandria pad by oozing B semiconductor calandria pad one (4-1), ooze B half
Conductor calandria pad two (4-2), ooze B semiconductor calandria pad three (4-3), ooze B semiconductor calandria pad four (4-4) four
Part forms, and semiconductor heating electrode heats electrode one (6-1) by semiconductor, semiconductor heats electrode two (6-2), semiconductor adds
Thermode three (6-3), semiconductor heating electrode four (6-4) four part composition, ooze B semiconductor calandria pad one (4-1) and half
Conductor heating electrode one (6-1) is connected, and oozes B semiconductor calandria pad two (4-2) and heats electrode two (6-2) phase with semiconductor
Even, ooze B semiconductor calandria pad three (4-3) to be connected with semiconductor heating electrode three (6-3), ooze B semiconductor calandria pad
Four (4-4) heat electrode four (6-4) with semiconductor and are connected, and semiconductor heating electrode is connected with oozing B semiconductor calandria (3).Wind
Fast wind transducer unit pad is by wind speed wind direction sensor unit pad one (5-1), wind speed wind direction sensor unit pad two
(5-2), wind speed wind direction sensor unit pad three (5-3), wind speed wind direction sensor unit pad four (5-4), wind speed and direction pass
Sensor cell pad five (5-5), wind speed wind direction sensor unit pad six (5-6), wind speed wind direction sensor unit pad seven (5-
7), wind speed wind direction sensor unit pad eight (5-8), wind speed wind direction sensor unit pad nine (5-9), wind speed wind direction sensor
Unit pad ten (5-10), wind speed wind direction sensor unit pad 11 (5-11), wind speed wind direction sensor unit pad 12
(5-12), wind speed wind direction sensor unit pad 13 (5-13), wind speed wind direction sensor unit pad 14 (5-14), wind speed
Wind transducer unit pad 15 (5-15) and 16 sensor lists of wind speed wind direction sensor unit pad 16 (5-16)
First pad composition, wind speed wind direction sensor unit is by wind speed wind direction sensor unit one (8-1), wind speed wind direction sensor unit two
(8-2), wind speed wind direction sensor unit three (8-3), wind speed wind direction sensor unit four (8-4), wind speed wind direction sensor unit
Five (8-5), wind speed wind direction sensor unit six (8-6), wind speed wind direction sensor unit seven (8-7), wind speed wind direction sensor list
First eight (8-8) eight wind speed wind direction sensor units are constituted, and environment humidity sensor is by environment temperature sensor unit (9-1)
Constitute with ambient humidity sensor unit (9-2) two parts, wind speed wind direction sensor unit pad two (5-2) and wind speed and direction pass
Sensor cell pad 15 (5-15) is connected with the two ends of wind speed wind direction sensor unit one (8-1) and provided work electricity
Pressure, wind speed wind direction sensor unit pad two (5-2) and wind speed wind direction sensor unit pad three (5-3) are sensed with wind speed and direction
The two ends of device unit two (8-2) are connected and provided operating voltage, wind speed wind direction sensor unit pad three (5-3) and wind speed
Wind transducer unit pad four (5-4) is connected and provided work with the two ends of wind speed wind direction sensor unit three (8-3)
Voltage, wind speed wind direction sensor unit pad six (5-6) and wind speed wind direction sensor unit pad seven (5-7) are passed with wind speed and direction
The two ends of sensor cell four (8-4) are connected and provided operating voltage, wind speed wind direction sensor unit pad seven (5-7) and wind
Fast wind transducer unit pad ten (5-10) is connected and provided work with the two ends of wind speed wind direction sensor unit five (8-5)
Make voltage, wind speed wind direction sensor unit pad ten (5-10) and wind speed wind direction sensor unit pad 11 (5-11) and wind speed
The two ends of wind transducer unit six (8-6) are connected and provided operating voltage, wind speed wind direction sensor unit pad 11
(5-11) it is connected with the two ends of wind speed wind direction sensor unit seven (8-7) with wind speed wind direction sensor unit pad 12 (5-12)
And provided operating voltage, wind speed wind direction sensor unit pad 14 (5-14) and wind speed wind direction sensor unit pad ten
Five (5-15) are connected and provided operating voltage with the two ends of wind speed wind direction sensor unit eight (8-8), and wind speed and direction senses
Device unit pad one (5-1) and wind speed wind direction sensor unit pad 16 (5-16) and ambient humidity sensor unit (9-2)
Two ends be connected and provided operating voltage, wind speed wind direction sensor unit pad eight (5-8) and wind speed wind direction sensor list
First pad nine (5-9) is connected and provided operating voltage with the two ends of environment temperature sensor unit (9-1), and wind speed and direction passes
Sensor cell pad five (5-5) and wind speed wind direction sensor unit pad 13 (5-13) and calandria temperature sensor unit
(10) two ends are connected and provided operating voltage.Groove is by groove one (12-1), groove two (12-2), groove three (12-
3), groove four (12-4), groove five (12-5), groove six (12-6), groove seven (12-7), groove eight (12-8), groove nine
(12-9), groove ten (12-10), groove 11 (12-11), groove 12 (12-12), this 13 part of groove 13 (12-13)
Composition.
Specific embodiment two：In conjunction with Fig. 2 and Fig. 4, present embodiment is described, from the beginning of the vertical view face of this sensor, successively
With hydrochloric acid, hydrofluoric acid, EPW corrosive agent, erode unwanted aluminum oxide, silica and silicon, form beam type structure.
Specific embodiment three：In conjunction with Fig. 2 and Fig. 3 present embodiment described, this sensor ooze B semiconductor calandria
(3) B semiconductor calandria pad, wind speed wind direction sensor unit pad, semiconductor heating electrode, alumina insulating layer, are oozed
(7), wind speed wind direction sensor unit, calandria temperature sensor unit (10) and groove all symmetrically structures.
Specific embodiment four：In conjunction with Fig. 2 present embodiment described, the oozing B semiconductor calandria (3), ooze B of this sensor
Semiconductor calandria pad is connected with semiconductor heating electrode, after applied voltage on oozing B semiconductor calandria pad, oozes B
Semiconductor calandria will produce heat, provides suitable operating temperature for each sensor unit.
Specific embodiment five：In conjunction with Fig. 2 present embodiment described, the Temperature Humidity Sensor unit of this sensor, can be real
When monitoring of environmental humiture parameter, for subsequent conditioning circuit carry out ambient temperature and humidity self compensation provide real time data.
Specific embodiment six：In conjunction with Fig. 2, present embodiment is described, this sensor is by MEMS technology, the sensing made
Device small volume, lightweight.
Claims (5)
1. a kind of ooze B semiconductor heating high accuracy wind speed and direction integrated sensor it is characterised in that：By silicon base (1), dioxy
SiClx insulating barrier (2), ooze B semiconductor calandria (3), ooze B semiconductor calandria pad, wind speed wind direction sensor unit pad,
Semiconductor heating electrode, alumina insulating layer (7), wind speed wind direction sensor unit, environment humidity sensor, heating temperature
Sensor unit (10), connecting line (11) and groove composition, are prepared by following step：
Step one：Preparing crystal orientation is (100), and specification is 8000 × 8000 × (200～300) μm3Silicon chip as silicon base (1),
The surface of cleaning silicon base (1)；
Step 2：Fall the silica of the oxidized generation in silicon upper surface with hydrofluoric acid clean, then pass through in the upper surface of silicon
The method of dry oxygen-wet oxygen-dry oxygen alternating oxidation, one layer of fine and close silicon dioxide insulating layer (2) of growth, a size of 8000 × 8000
× (2～5) μm3；
Step 3：Above B technology is oozed by photoetching technique and plasma in silicon dioxide insulating layer (2), forming the length of side is 2000 μ
The octagon of m oozes B semiconductor calandria, then the semiconductor calandria oxidation forming thin layer by " annealing " mode of oxidizing
Layer；
Step 4：After the completion of above-mentioned steps, by magnetron sputtering technique, in silicon dioxide insulating layer (2), ooze the heating of B semiconductor
B semiconductor calandria pad, wind speed wind direction sensor unit pad, semiconductor heating electrode, thickness are oozed in body (3) upper sputtering generation
Equalization, is 2～4 μm, and exposes and ooze B semiconductor calandria pad, wind speed wind direction sensor unit pad；
Step 5：Pass through magnetron sputtering technique again, sputter one layer of aluminium, oxidized formation a layer thickness is 5～6 μm of alumina insulations
Layer (7), and expose and ooze B semiconductor calandria pad and wind speed wind direction sensor unit pad；
Step 6：On alumina insulating layer (7), adopt magnetron sputtering technique again, oozing B semiconductor calandria pad and wind speed
Generate 5～6 μm of thickness corresponding to size on wind transducer unit pad oozes B semiconductor calandria pad and wind speed and direction biography
Sensor cell pad, then sputter generate thickness be 2～4 μm ooze B semiconductor calandria pad, wind speed wind direction sensor unit weldering
Disk, wind speed wind direction sensor unit, environment humidity sensor, calandria temperature sensor unit (10) and connecting line；
Step 7：After overall structure is formed, use hydrochloric acid, HF acid and EPW corrosive agent respectively to alumina insulating layer (7), titanium dioxide
Silicon insulating barrier (2) and silicon base (1) are from just in the face of structure is corroded, then carry out corruption with EPW corrosive agent from silicon base (1) back side
Erosion, forms groove, ultimately generates a kind of integrated biography of high accuracy wind speed and direction oozing the heating of B semiconductor with beam type structure
Sensor.
2. a kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor according to claim 1, its feature exists
In：Ooze B semiconductor calandria (3), ooze B semiconductor calandria pad, wind speed wind direction sensor unit pad, semiconductor heating electricity
Pole, the composition of wind speed wind direction sensor unit, environment humidity sensor and calandria temperature sensor unit (10) and mutually
Connect；Ooze B semiconductor calandria pad by oozing B semiconductor calandria pad one (4-1), ooze B semiconductor calandria pad two (4-
2), ooze B semiconductor calandria pad three (4-3), ooze B semiconductor calandria pad four (4-4) four part composition, semiconductor heats
Electrode is heated electrode one (6-1), semiconductor heating electrode two (6-2), semiconductor heating electrode three (6-3), is partly led by semiconductor
Body heating electrode four (6-4) four part composition, oozes B semiconductor calandria pad one (4-1) and semiconductor heating electrode one (6-1)
It is connected, oozes B semiconductor calandria pad two (4-2) and be connected with semiconductor heating electrode two (6-2), ooze the weldering of B semiconductor calandria
Disk three (4-3) heats electrode three (6-3) with semiconductor and is connected, and oozes B semiconductor calandria pad four (4-4) and semiconductor heating electricity
Pole four (6-4) be connected, semiconductor heating electrode be connected with oozing B semiconductor calandria (3), wind speed wind direction sensor unit pad by
Wind speed wind direction sensor unit pad one (5-1), wind speed wind direction sensor unit pad two (5-2), wind speed wind direction sensor list
First pad three (5-3), wind speed wind direction sensor unit pad four (5-4), wind speed wind direction sensor unit pad five (5-5), wind
Fast wind transducer unit pad six (5-6), wind speed wind direction sensor unit pad seven (5-7), wind speed wind direction sensor unit
Pad eight (5-8), wind speed wind direction sensor unit pad nine (5-9), wind speed wind direction sensor unit pad ten (5-10), wind speed
Wind transducer unit pad 11 (5-11), wind speed wind direction sensor unit pad 12 (5-12), wind speed wind direction sensor
Unit pad 13 (5-13), wind speed wind direction sensor unit pad 14 (5-14), wind speed wind direction sensor unit pad ten
Five (5-15) and 16 sensor unit pad compositions of wind speed wind direction sensor unit pad 16 (5-16), wind speed and direction passes
Sensor cell is by wind speed wind direction sensor unit one (8-1), wind speed wind direction sensor unit two (8-2), wind speed wind direction sensor
Unit three (8-3), wind speed wind direction sensor unit four (8-4), wind speed wind direction sensor unit five (8-5), wind speed and direction sensing
Device unit six (8-6), wind speed wind direction sensor unit seven (8-7), eight wind speed and directions of wind speed wind direction sensor unit eight (8-8)
Sensor unit is constituted, and environment humidity sensor is by environment temperature sensor unit (9-1) and ambient humidity sensor unit
(9-2) two parts composition, wind speed wind direction sensor unit pad two (5-2) and wind speed wind direction sensor unit pad 15 (5-
15) it is connected and provided operating voltage with the two ends of wind speed wind direction sensor unit one (8-1), wind speed wind direction sensor unit
The two ends phase of pad two (5-2) and wind speed wind direction sensor unit pad three (5-3) and wind speed wind direction sensor unit two (8-2)
Connect and provided operating voltage, wind speed wind direction sensor unit pad three (5-3) and wind speed wind direction sensor unit pad four
(5-4) it is connected and provided operating voltage with the two ends of wind speed wind direction sensor unit three (8-3), wind speed wind direction sensor list
First pad six (5-6) and the two ends of wind speed wind direction sensor unit pad seven (5-7) and wind speed wind direction sensor unit four (8-4)
It is connected and provided operating voltage, wind speed wind direction sensor unit pad seven (5-7) and wind speed wind direction sensor unit pad
Ten (5-10) are connected and provided operating voltage with the two ends of wind speed wind direction sensor unit five (8-5), and wind speed and direction senses
Device unit pad ten (5-10) and wind speed wind direction sensor unit pad 11 (5-11) and wind speed wind direction sensor unit six (8-
6) two ends are connected and provided operating voltage, and wind speed wind direction sensor unit pad 11 (5-11) and wind speed and direction sense
Device unit pad 12 (5-12) is connected and provided operating voltage with the two ends of wind speed wind direction sensor unit seven (8-7),
Wind speed wind direction sensor unit pad 14 (5-14) and wind speed wind direction sensor unit pad 15 (5-15) and wind speed and direction
The two ends of sensor unit eight (8-8) are connected and provided operating voltage, wind speed wind direction sensor unit pad one (5-1) and
Wind speed wind direction sensor unit pad 16 (5-16) is connected and provided with the two ends of ambient humidity sensor unit (9-2)
Operating voltage, wind speed wind direction sensor unit pad eight (5-8) and wind speed wind direction sensor unit pad nine (5-9) and environment temperature
The two ends of degree sensor unit (9-1) are connected and provided operating voltage, wind speed wind direction sensor unit pad five (5-5) and
Wind speed wind direction sensor unit pad 13 (5-13) is connected with the two ends of calandria temperature sensor unit (10) and carries for it
For operating voltage.
3. a kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor according to claim 1, its feature exists
In：Sensor generally symmetrical structure, and each several part is also symmetrical structure, is embodied in the following aspects：
First, silicon base (1) and silicon dioxide insulating layer (2) are the centrosymmetric square structure of 8000 μm of 8000 μ m；
2nd, ooze B semiconductor calandria (3), ooze B semiconductor calandria pad, wind speed wind direction sensor unit pad, semiconductor add
Symmetrical structure centered on thermode；
3rd, symmetrical structure centered on alumina insulating layer (7)；
4th, symmetrical structure centered on wind speed wind direction sensor unit and groove.
4. a kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor according to claim 1, its feature exists
In：Its beam type structure forming manner is broadly divided into following step：
Step one：From the beginning of the vertical view face of this sensor construction, hcl corrosion falls unwanted Al2O3Formation groove one (12-1),
Groove two (12-2), groove three (12-3), groove four (12-4)；
Step 2：With the unwanted SiO of HF sour eating away2Formed groove five (12-5), groove six (12-6), groove seven (12-7),
Groove eight (12-8)；
Step 3：Erode unwanted Si with EPW corrosive agent and form groove nine (12-9), groove ten (12-10), groove 11
(12-11), groove 12 (12-12)；
Step 4：In the bottom of silicon base (1), erode 6000 × 6000 × (180～280) μm with EPW corrosive agent from bottom3
The cuboid of size, forms groove 13 (12-13).
5. a kind of high accuracy wind speed and direction integrated sensor oozing the heating of B semiconductor according to claim 1 and 2, it is special
Levy and be：Wind speed wind direction sensor unit and calandria temperature sensor unit (10), this 9 sensor units are distributed in 2000
On the heating body unit of 2000 μm of μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410779711.3A CN104482964B (en) | 2014-12-17 | 2014-12-17 | Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410779711.3A CN104482964B (en) | 2014-12-17 | 2014-12-17 | Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104482964A CN104482964A (en) | 2015-04-01 |
| CN104482964B true CN104482964B (en) | 2017-02-22 |
Family
ID=52757534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410779711.3A Expired - Fee Related CN104482964B (en) | 2014-12-17 | 2014-12-17 | Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104482964B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105954815B (en) * | 2016-07-04 | 2019-05-24 | 河北稳控科技有限公司 | A kind of flow-type multifunctional meteorological station |
| CN110080744B (en) * | 2019-04-30 | 2022-12-23 | 南京信息工程大学 | Underground detection device based on monolithic integrated sensor and preparation method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5663508A (en) * | 1995-08-07 | 1997-09-02 | Delco Electronics Corporation | Silicon flow sensor |
| CN1356555A (en) * | 2002-01-11 | 2002-07-03 | 东南大学 | Integrated anemometer using polysilicon temp diode and its preparing process |
| CN1588091A (en) * | 2004-10-14 | 2005-03-02 | 东南大学 | Wind speed sensor based on micro mechanic working and its producing method |
| CN1670488A (en) * | 2005-04-13 | 2005-09-21 | 东南大学 | Temperature, wind speed, wind direction and air pressure integration sensor |
| CN1802552A (en) * | 2003-06-06 | 2006-07-12 | M.B.T.L.有限公司 | Environmental sensor |
| CN101059528A (en) * | 2007-05-11 | 2007-10-24 | 东南大学 | Cross structure two-D wind speed wind direction sensor and its preparation method |
| CN101271164A (en) * | 2007-03-21 | 2008-09-24 | 中国科学院电子学研究所 | Guiding type wind direction and wind velocity sensor |
| CN102095888A (en) * | 2010-12-14 | 2011-06-15 | 东南大学 | Heat-type wind-speed and wind-direction sensor with heat insulation structure and preparation method thereof |
-
2014
- 2014-12-17 CN CN201410779711.3A patent/CN104482964B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5663508A (en) * | 1995-08-07 | 1997-09-02 | Delco Electronics Corporation | Silicon flow sensor |
| CN1356555A (en) * | 2002-01-11 | 2002-07-03 | 东南大学 | Integrated anemometer using polysilicon temp diode and its preparing process |
| CN1802552A (en) * | 2003-06-06 | 2006-07-12 | M.B.T.L.有限公司 | Environmental sensor |
| CN1588091A (en) * | 2004-10-14 | 2005-03-02 | 东南大学 | Wind speed sensor based on micro mechanic working and its producing method |
| CN1670488A (en) * | 2005-04-13 | 2005-09-21 | 东南大学 | Temperature, wind speed, wind direction and air pressure integration sensor |
| CN101271164A (en) * | 2007-03-21 | 2008-09-24 | 中国科学院电子学研究所 | Guiding type wind direction and wind velocity sensor |
| CN101059528A (en) * | 2007-05-11 | 2007-10-24 | 东南大学 | Cross structure two-D wind speed wind direction sensor and its preparation method |
| CN102095888A (en) * | 2010-12-14 | 2011-06-15 | 东南大学 | Heat-type wind-speed and wind-direction sensor with heat insulation structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104482964A (en) | 2015-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104374886B (en) | One oozes B quasiconductor heating humiture self compensation gas integrated sensor | |
| CN104482964B (en) | Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor | |
| CN103675048A (en) | Metal-oxide gas sensor based on MEMS (Micro-Electro-Mechanic System) and preparation technology thereof | |
| CN1303426C (en) | Wind speed sensor based on micro mechanic working and its producing method | |
| CN108180927A (en) | A kind of Grazing condition self energizing sensor and preparation method thereof | |
| US20160370336A1 (en) | Micro Heater and Micro Sensor | |
| CN204359814U (en) | A kind of high precision wind speed and direction integrated sensor of nichrome film heating | |
| CN110212884A (en) | Filling type electrode structure suitable for SAW device | |
| CN103499796A (en) | Microcomputer electromagnetic field sensor with comb tooth structure | |
| CN103438936A (en) | Capacitive temperature, humidity and air pressure sensor integrated manufacturing method based on SOI chip device layer silicon anodic bonding | |
| CN109928359A (en) | Micro-structure packaging method and packaging | |
| CN108318548A (en) | A kind of preparation method of single hang oneself from a beam gas sensor, sensor array and sensor | |
| CN102175884B (en) | Two-dimensional wind speed and direction sensor with high sensitivity | |
| CN104536063A (en) | Piezoresistance sensitivity and capacitance sensitivity combined rain sensor structure | |
| CN101482441B (en) | Dual-spindle surface shearing stress sensor | |
| CN205785343U (en) | The silica-based gas sensitization chip of integrated Temperature Humidity Sensor | |
| CN203798395U (en) | Graphene micro flow sensor | |
| CN104198762A (en) | Eight-beam symmetrical silicon micro-accelerometer | |
| CN104390667B (en) | Environment parameter integrated sensor capable of adjusting heating temperature of B-infiltration semiconductor | |
| CN103792268B (en) | A kind of differential capacitance type hydrogen gas sensor | |
| CN107907707A (en) | A kind of wind speed wind direction sensor and detection method based on double-deck thermopile structure | |
| CN110006549B (en) | Flexible temperature and humidity sensor with integrated structure and preparation method thereof | |
| CN204479095U (en) | A kind of nichrome film heating-up temperature controllable environment parameter integrated sensor | |
| CN104483367B (en) | Solid thin film electrolyte current mode SO2 gas sensor and preparation method thereof | |
| CN2750321Y (en) | Micromachining based air velocity transducer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170222 Termination date: 20181217 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |