CN104465424A - Method for manufacturing metal bumps - Google Patents
Method for manufacturing metal bumps Download PDFInfo
- Publication number
- CN104465424A CN104465424A CN201410763509.1A CN201410763509A CN104465424A CN 104465424 A CN104465424 A CN 104465424A CN 201410763509 A CN201410763509 A CN 201410763509A CN 104465424 A CN104465424 A CN 104465424A
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- Prior art keywords
- salient point
- wafer
- metal salient
- metal
- mold
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The invention discloses method for manufacturing metal bumps. The method comprises the steps that metal balls are formed in aluminum pad pressure regions of the front face of a wafer in a wire welding mode; wires at the tops of the metal balls are cut away to form the metal bumps; mechanical rough grinding is carried out on the surfaces of the metal bumps; chemical mechanical finish grinding is carried out on the surfaces of the metal bumps; concave patterns are formed in the surfaces of the metal bumps; hot-pressure welding is carried out on the metal bumps and an anisotropic conductive film. The metal can be gold, which is not limited. The method has the advantages that under the condition that the height difference of the gold bumps can be neglected, the problem that because the gold bumps are too low or can not be closely combined with the anisotropic conductive film, circuit opening occurs, or because the gold bumps are too high or deform too much, short circuiting occurs is avoided. The production process is simplified, the cost is lowered, and meanwhile the process effect of electrolytic gold bumps is achieved. The height uniformity of the gold bumps is high, so that the product yield is increased, the product manufacturing period is shortened, and the production cost is lowered.
Description
Technical field
The present invention relates to a kind of metal salient point manufacture method, especially, what relate to a kind of chip au bump plants ball technique and manufacture method, belongs to integrated antenna package technical field.
Background technology
Wafer-level packaging (WLP) technology is just popular, and mainly package dimension can be decreased to IC die size by it for this, and it can make by disk form processing in batching, and encapsulation is reduced costs.WLP packaging cost also can reduce corresponding decline with chip size.In addition, due to can pipelining and management be carried out to the known good circuit of circuit package, test, separation and shipping, thus reduce further encapsulation total cost and shorten cycle time.If just consider encapsulation requirement when designing semiconductor device, this can be of value to device layout design undoubtedly, and can improve element function.Upside-down mounting (Flip-Chip) makes salient point on aluminium pad (nip), then chip upset added the technology that heat utilization salient point combines with substrate and replace conventional routing bonding.
In order to reduce costs, improve speed, improve product reliability, use chip to weld with substrate in flip-chip packaged technology and encapsulate, packaged type be chip front side down to substrate, without the need to wire bonding, formation the shortest circuit; Adopt salient point upside-down mounting, reduce the package dimension of product, improve the electrical property of product.The thermal property of flip-chip packaged technology is obviously superior to the conventional lead key closing process used, and compared with the Wire Bonding Technology that conventional speed is slower, upside-down mounting is more suitable for being applied in the product of high pin number, miniaturization, multi-functional, high-speed trend IC.For complying with integrated circuit (IC) products densification, miniaturized development trend further, integrated antenna package now uses salient point (bump) to replace conventional lead bonding (wire bonding) and forms circuit connection.
The manufacture method of traditional au bump is the technique that galvanoplastic and photoetching process combine.First carry out sputtering UBM (under salient point metal), UBM is made up of adhesion layer, barrier layer and soakage layer three-layer metal usually, is the Seed Layer of plating.Require that it has good adhesiveness with aluminium pressure welding electrode below, effectively can stop the phase counterdiffusion between au bump with other metallic elements, avoid producing disadvantageous intermetallic compound, gold more can not be allowed to enter in wafer.Then carry out thick resist lithography, photoetching is the normal process steps in technique, but the height of au bump is about 17um, and the thickness of photoresist should at about 25um, and therefore it needs photoresist, special sol evenning machine and the exposure machine that employing viscosity is large.And galvanoplastic are when manufacturing au bump, require the sidewall of electroplating hole after photoetching, side wall angle wants > 85 °, because the shape of au bump determined by the shape of electroplating hole after photoetching substantially.Then electroplate, plating is divided into rack plating or vertical spraying plating, rack plating and anode and as the plating piece of negative electrode respectively in immersion plating liquid, and position is put relatively, usually rocks plating piece, to allow fresh electroplate liquid add to the surface of plating piece in time during plating.Electrogilding salient point can adopt vertical metallikon, and plated wafer frontside down, electroplate liquid, from the central authorities being sprayed onto wafer below vertically upward, then flows out to wafer surrounding.Remove photoresist subsequently, form au bump.This conventional processes complex process, the production cycle is longer, and cost is higher.
Due to au bump complex manufacturing technology, wafer makes meeting height of formation difference in the process of salient point, and the salient point that Partial Height is lower normally can not contact with solder on substrate in upside-down mounting operation, causes product failure welding after Reflow Soldering; And the product of excessive height excessive contact in upside-down mounting operation, after Reflow Soldering, cause short circuit, these situations all directly can damage product, reduce the encapsulation yield of product.
Along with further developing of semiconductor technology, and high frequency, low-power consumption and little shape sized products the driving of application demand, existing technique drawback is outstanding day by day, in the urgent need to a kind of au bump manufacture craft simplifying existing technique, shorten the production cycle, reduce costs and improve yield.
Summary of the invention
In order to solve the problem, the invention provides a kind of manufacture method of metal salient point, comprising the following steps: wafer frontside aluminium pad nip wire bond forms Metal Ball; The line at described Metal Ball top is pruned formation metal salient point; Carry out machinery to described metal salient point surface to polish; Carry out chemical machinery to described metal salient point surface to polish; Sunken inside figure is formed on described metal salient point surface; By described metal salient point and anisotropic conductive film thermocompression bonding.
Without limitation, described metal is gold.
Preferably, further comprising the steps of before described step wafer frontside aluminium pad nip wire bond forms Metal Ball: to paste thinning glued membrane in full wafer wafer frontside; Carry out thinning to wafer; Removing wafer frontside glued membrane.Described step pastes in thinning glued membrane in full wafer wafer frontside, and full wafer wafer is placed in film sticking equipment, and in the front of wafer 1, namely the functional areas of chip paste the thinning glued membrane of one deck.Described step wafer is carried out thinning in, by stripping apparatus, carry out thinning according to different wafer and different product size to wafer 1.
Further, formed in Metal Ball at described step wafer frontside aluminium pad nip wire bond, use Wire Bonding, pre-set wire bond temperature and the gold goal height of wirebond machine, with nip 2 one_to_one corresponding of each chip of wafer 1, at nip 2 wire bond melting formation gold goal on the surface.
Further, in described step the line at described Metal Ball top pruned and formed in metal salient point, use wafer scale routing device to prune the silk thread at wire bond melting gold goal top, namely form metal salient point 3.
In addition, to carry out during machinery polishes to described metal salient point surface in described step, the datum line using mechanical corase grind equipment to arrange machinery corase grind according to minimum altitude carries out polishing to metal salient point 3, makes metal salient point 3 surface just flat.Described metal salient point surface carried out during chemical machinery polishes in described step, use chemical machinery fine-grinding and polishing, while softening metal salient point 3 surface, make metal salient point 3 surface more smooth, the metal salient point 3 of differing heights highly remains basically stable after machinery corase grind and chemical machinery fine grinding.
More preferably, formed in sunken inside figure in described step on described metal salient point surface, make the tabular mould 4 that one side has decorative pattern another side smooth, the dapple one side of mould 4 is uneven; By wafer 1 horizontal, keep mould 4 and wafer 1 level, by corresponding for dapple for mould 4 one side metal salient point 3, apply pressure and wafer 1 pressing of 3N ~ 5N, after pressing, metal salient point 3 surface forms the decorative pattern caved inward, concave-convex surface.
In described metal salient point and anisotropic conductive film thermocompression bonding, by the technique of thermocompression bonding by metal salient point 3 and anisotropic conductive film 5 hot pressing, anisotropic conductive film 5 forms inverted structure with wafer 1 and metal salient point 3.
More preferably, formed in the step of sunken inside figure on described metal salient point surface, further comprising the steps: the mold being manufactured with figure; The mode of etching is used to form sunken inside pattern at metal salient point top; Metal salient point after etching and anisotropic conductive film thermocompression bonding.In the step of mold being manufactured with figure, make a kind of figuratum mold 6, mold 6 is carved with figure.Formed in the step of sunken inside pattern using the mode of etching at metal salient point top, by wafer 1 horizontal, keep mold 6 and wafer 1 level, by the metal salient point 3 on corresponding for mold 6 wafer 1, and mold 6 is covered on wafer 1, mold 6 is carved with the partial denudation of figure outside; Brush photoresist 7 in mold 6, namely the visuals of mold 6 fills photoresist 7, etches.In the step of metal salient point after the etching and anisotropic conductive film thermocompression bonding, etching rear surface forms the metal salient point 3 of sunken inside pattern, by the technique of thermocompression bonding, with anisotropic conductive film 5 hot pressing, anisotropic conductive film 5 forms inverted structure with wafer 1 and metal salient point 3.
The present invention can bring following beneficial effect: in the negligible situation of the difference in height of each au bump, avoid au bump due to highly too low or fail to combine closely with anisotropic conductive film the open circuit caused, and au bump excessive height, the excessive short circuit problem caused of deformation.In simplification production technology, reach the technological effect of electrogilding salient point while reducing costs, au bump high homogeneity is high, improves the yield of product, shortens the production cycle, reduces production cost.
Accompanying drawing explanation
Fig. 1 is that au bump forms rear product profile
Fig. 2 is au bump machinery corase grind and the rear product profile of chemical machinery fine grinding
Fig. 3 is a kind of mould being carved with special decorative pattern
Fig. 4 is the Product management model figure of pattern mould level to au bump force on wafer
Fig. 5 is that after pattern mould level exerts a force to au bump on wafer, au bump overlooks enlarged drawing
Fig. 6 is the process profile of pattern mould level to au bump force on wafer
Fig. 7 is au bump profile after pattern mould level exerts a force to au bump on wafer
Fig. 8 is profile after pattern mould level exerts a force to au bump on wafer
Fig. 9 is after au bump deformation, profile after wafer and anisotropic conductive film thermocompression bonding
Figure 10 is a kind of mold being carved with special decorative pattern
Figure 11 overlooks enlarged drawing after resist coating for using mold on au bump
Figure 12 overlooks enlarged drawing after au bump etching
Figure 13 is that mold is placed horizontally at au bump profile after on wafer
Figure 14 is au bump profile after resist coating on wafer
Figure 15 is profile after au bump etching
Figure 16 is the rear profile of au bump etching on wafer
Figure 17 is that after au bump etching, after wafer and anisotropic conductive film thermocompression bonding, profile is concrete
Execution mode
Below in conjunction with the accompanying drawing in the present invention, the technical scheme in the present invention is clearly and completely described.
In the first execution mode of the present invention, provide a kind of manufacture method of au bump.The method comprises the following steps:
Step 1: full wafer wafer frontside (i.e. functional areas) pastes thinning glued membrane.
Step 2: wafer is thinning.
Step 3: removing wafer frontside glued membrane.
Step 4: wafer frontside aluminium pad (nip) wire bond forms gold goal.
Step 5: pruned by the line at the gold goal top of sintering, forms au bump.
Step 6: machinery polishes bump surface.
Step 7: chemical machinery refines flat bump surface.
Step 8: au bump surface forms sunken inside figure.
Step 9: au bump and anisotropic conductive film thermocompression bonding.
In above-mentioned steps 1, paste thinning glued membrane in the front (i.e. functional areas) of wafer 1.Full wafer wafer is placed in film sticking equipment, and in the front of wafer 1, namely the functional areas of chip paste the thinning glued membrane of one deck, not by damage in the following operation in the front of protection wafer.
In step 2 above, by stripping apparatus, carry out thinning according to different wafer and different product size to wafer 1, reach desired thickness.
In above-mentioned steps 3, the thinning glued membrane that removing wafer 1 front pastes.
In above-mentioned steps 4, use Wire Bonding, pre-set wire bond temperature and the gold goal height of wirebond machine, with nip (aluminium pad) 2 one_to_one corresponding of each chip of wafer 1, at nip 2 wire bond melting formation gold goal on the surface.Operations such as eliminating loaded down with trivial details sputtering UBM, thick resist lithography, electroplate, remove photoresist.Be different from traditional au bump making work, wire bond melting forms the method simple process of gold goal, with short production cycle.
In above-mentioned steps 5, use wafer scale routing (wire bonding) equipment to prune the silk thread at wire bond melting gold goal top, namely form au bump 3.
In above-mentioned steps 6, in the fabrication due to au bump 3, there is certain difference in height, so need to use mechanical corase grind equipment to carry out polishing to au bump 3, make au bump 3 surface just flat.As shown in Figure 1, the datum line of machinery corase grind is set, i.e. dotted line in figure according to the minimum altitude of all au bumps 3.Machinery corase grind equipment is calibrated altitude according to the height that au bump 3 is minimum, by the emery wheel of machinery corase grind equipment, carries out polishing to other au bumps 3.
In above-mentioned steps 7, in order to reduce the difference in height of each au bump further, needing to use chemical machinery fine-grinding and polishing, while softening au bump 3 surface, making au bump 3 surface more smooth, improving the coplanarity of au bump 3 on wafer 1 further.As shown in Figure 2, the au bump 3 of differing heights highly remains basically stable after machinery corase grind and chemical machinery fine grinding.
In above-mentioned steps 8, make the tabular mould 4 that one side has decorative pattern another side smooth, as shown in Figure 3, the dapple one side of mould 4 is uneven.Then by wafer 1 horizontal, keep mould 4 and wafer 1 level, by corresponding for dapple for mould 4 one side au bump 3, apply pressure and wafer 1 pressing of 3N ~ 5N.As shown in Figure 4, template 4 covers wafer 1 completely, has the one side of figure with au bump 3 to contact at the effect lower bolster 4 exerted a force downwards, and the figure of template 4 embeds au bump 3.Mould 4 has the end face of the one side contact au bump 3 of special decorative pattern as shown in Figure 3, and it is inner to embed au bump 3.As shown in Figure 6, mould 4 and wafer 1 in the horizontal plane, the top of au bump 3 on the corresponding wafer 1 of mould 4.As shown in Figure 5, after pressing, au bump 3 surface forms the decorative pattern caved inward, concave-convex surface.There is deformation in au bump 3 under the effect of force simultaneously, and end face becomes large, and so far the difference in height of each au bump 3 can be ignored.As shown in Figure 7, remove mould 4 after pressing, the end face of au bump 3 has been formed with the relief pattern of special decorative pattern.As shown in Figure 8, the end face of au bumps 3 all on wafer 1 has been formed with the relief pattern of special decorative pattern all, and highly consistent.
In above-mentioned steps 9, by the technique of thermocompression bonding by au bump 3 and anisotropic conductive film (ACF film) 5 hot pressing, anisotropic conductive film 5 forms inverted structure with wafer 1 and au bump 3.As shown in Figure 9, au bump 3 embeds a part of anisotropic conductive film 5, anisotropic conductive film 5 and au bump 3 are particularly combined closely at sunken inside decorative pattern place, au bump 3 on the nip 2 of wafer 1 extrudes rear firing point performance, with being communicated with of the common forming circuit of the conducting particles in anisotropic conductive film 5 with anisotropic conductive film 5.
Be in embodiment of the present invention second, the first embodiment is improved.Particularly, in this embodiment, the production method of sunken inside figure in the first embodiment is improved, in this embodiment, comprises the following steps:
Step 8-1: the mold being manufactured with figure.
Step 8-2: use the mode of etching to form sunken inside pattern at au bump top.
Step 9-1: the au bump after etching and anisotropic conductive film thermocompression bonding.
In above-mentioned steps 8-1, make a kind of figuratum mold 6, as shown in Figure 10, mold 6 is carved with special graph, but method provided by the invention is not limited to the figure in the present embodiment.
In above-mentioned steps 8-2, by wafer 1 horizontal, keep mold 6 and wafer 1 level, by the au bump 3 on corresponding for mold 6 wafer 1, and be covered on wafer 1 by mold 6, as shown in figure 13, mold 6 is carved with the partial denudation of figure outside.Brush photoresist 7 in mold 6, namely the visuals of mold 6 fills photoresist 7, and as shown in figure 11, at the top of au bump 3, the visuals of mold 6 has filled photoresist 7 all.As shown in figure 14, the visuals more clearly showing mold 6 from section fills photoresist all.Remove mold 6 again, namely au bump 3 surface is formed and is coated with the special graph of photoresist 7.The method re-using chemical etching etches the au bump 3 on wafer 1, and namely the au bump 3 after etching on wafer 1 forms the special pattern of sunken inside.As shown in figure 12, there is sunken inside figure in the position that rear au bump 3 top of etching does not cover photoresist 7.As shown in figure 15, there is sunken inside figure in the position that after more clearly showing etching from section, au bump 3 top does not cover photoresist 7.As shown in figure 16, the uniform special graph in top of all au bumps 3 on rear wafer 1 is etched.
In above-mentioned steps 9-1, etching rear surface forms the au bump 3 of sunken inside pattern, and by the technique of thermocompression bonding, with anisotropic conductive film (ACF film) 5 hot pressing, anisotropic conductive film 5 forms inverted structure with wafer 1 and au bump 3.As shown in figure 17, au bump 3 embeds a part of anisotropic conductive film 5, anisotropic conductive film 5 and au bump 3 are particularly combined closely at sunken inside decorative pattern place, au bump 3 on the nip 2 of wafer 1 extrudes rear firing point performance, with being communicated with of the common forming circuit of the conducting particles in anisotropic conductive film 5 with anisotropic conductive film 5.
The present invention can bring following beneficial effect: in the negligible situation of the difference in height of each au bump, avoid au bump due to highly too low or fail to combine closely with anisotropic conductive film the open circuit caused, and au bump excessive height, the excessive short circuit problem caused of deformation.In simplification production technology, reach the technological effect of electrogilding salient point while reducing costs, au bump high homogeneity is high, improves the yield of product, shortens the production cycle, reduces production cost.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (15)
1. a manufacture method for metal salient point, comprises the following steps:
Wafer frontside aluminium pad nip wire bond forms Metal Ball;
The line at described Metal Ball top to be pruned formation metal salient point;
Carry out machinery to described metal salient point surface to polish;
Carry out chemical machinery to described metal salient point surface to polish;
Sunken inside figure is formed on described metal salient point surface;
By described metal salient point and anisotropic conductive film thermocompression bonding.
2. metal salient point manufacture method as claimed in claim 1, is characterized in that, described metal is gold.
3. metal salient point manufacture method as claimed in claim 2, is characterized in that, further comprising the steps of form the step of Metal Ball at wafer frontside aluminium pad nip wire bond before: to paste thinning glued membrane in full wafer wafer frontside; Carry out thinning to wafer; Removing wafer frontside glued membrane.
4. metal salient point manufacture method as claimed in claim 3, it is characterized in that, paste in full wafer wafer frontside in the step of thinning glued membrane, full wafer wafer is placed in film sticking equipment, in the front of wafer (1), namely the functional areas of chip paste the thinning glued membrane of one deck.
5. metal salient point manufacture method as claimed in claim 4, is characterized in that, carrying out in thinning step to wafer, by stripping apparatus, carrying out thinning according to different wafer and different product size to wafer (1).
6. metal salient point manufacture method as claimed in claim 1 or 2, it is characterized in that, formed in the step of Metal Ball at wafer frontside aluminium pad nip wire bond, use Wire Bonding, wire bond temperature and the gold goal height of wirebond machine are pre-set, with nip (2) one_to_one corresponding of wafer (1) each chip, at nip (2) wire bond melting formation gold goal on the surface.
7. metal salient point manufacture method as claimed in claim 1 or 2, it is characterized in that, the line at described Metal Ball top is pruned form metal salient point step in, use wafer scale routing device to prune the silk thread at wire bond melting gold goal top, namely form metal salient point (3).
8. metal salient point manufacture method as claimed in claim 1 or 2, it is characterized in that, carrying out in the mechanical step polished to described metal salient point surface, the datum line using mechanical corase grind equipment to arrange machinery corase grind according to minimum altitude carries out polishing to metal salient point (3), makes metal salient point (3) surface just flat.
9. metal salient point manufacture method as claimed in claim 1 or 2, it is characterized in that, described metal salient point surface is being carried out in the step that chemical machinery polishes, use chemical machinery fine-grinding and polishing, while softening metal salient point (3) surface, make metal salient point (3) surface more smooth, the metal salient point (3) of differing heights highly remains basically stable after machinery corase grind and chemical machinery fine grinding.
10. metal salient point manufacture method as claimed in claim 1 or 2, it is characterized in that, formed in the step of sunken inside figure on described metal salient point surface, make the tabular mould (4) that one side has decorative pattern another side smooth, mould (4) dapple one side is uneven; By wafer (1) horizontal, keep mould (4) and wafer (1) level, by corresponding for dapple for mould (4) one side metal salient point (3), apply pressure and wafer (1) pressing of 3N ~ 5N, after pressing, metal salient point (3) surface forms the decorative pattern caved inward, concave-convex surface.
11. metal salient point manufacture methods as claimed in claim 1 or 2, it is characterized in that, by in the step of described metal salient point and anisotropic conductive film thermocompression bonding, by the technique of thermocompression bonding by metal salient point (3) and anisotropic conductive film (5) hot pressing, anisotropic conductive film (5) forms inverted structure with wafer (1) and metal salient point (3).
12. metal salient point manufacture methods as claimed in claim 1 or 2, is characterized in that, are formed in the step of sunken inside figure on described metal salient point surface, further comprising the steps: the mold being manufactured with figure; The mode of etching is used to form sunken inside pattern at metal salient point top; Metal salient point after etching and anisotropic conductive film thermocompression bonding.
13. metal salient point manufacture methods as claimed in claim 12, is characterized in that, in the step of mold being manufactured with figure, make a kind of figuratum mold (6), mold 6 is carved with figure.
14. metal salient point manufacture methods as claimed in claim 13, it is characterized in that, formed in the step of sunken inside pattern using the mode of etching at metal salient point top, by wafer (1) horizontal, keep mold (6) and wafer (1) level, by the metal salient point (3) on mold (6) corresponding wafer (1), and mold (6) is covered on wafer (1), mold (6) is carved with the partial denudation of figure outside; At the upper brush photoresist (7) of mold (6), the visuals of mold (6) namely fills photoresist (7), etches.
15. metal salient point manufacture methods as claimed in claim 14, it is characterized in that, in the step of metal salient point after the etching and anisotropic conductive film thermocompression bonding, etching rear surface forms the metal salient point (3) of sunken inside pattern, by the technique of thermocompression bonding, with anisotropic conductive film (5) hot pressing, anisotropic conductive film (5) forms inverted structure with wafer (1) and metal salient point (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410763509.1A CN104465424A (en) | 2014-12-12 | 2014-12-12 | Method for manufacturing metal bumps |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410763509.1A CN104465424A (en) | 2014-12-12 | 2014-12-12 | Method for manufacturing metal bumps |
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| CN104465424A true CN104465424A (en) | 2015-03-25 |
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| CN201410763509.1A Pending CN104465424A (en) | 2014-12-12 | 2014-12-12 | Method for manufacturing metal bumps |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0316912A2 (en) * | 1987-11-18 | 1989-05-24 | Casio Computer Company Limited | A bump electrode structure of a semiconductor device and a method for forming the same |
| JPH02177546A (en) * | 1988-12-28 | 1990-07-10 | Fujitsu Ltd | Manufacture of semiconductor integrated circuit |
| EP0616363A1 (en) * | 1993-01-28 | 1994-09-21 | Matsushita Electric Industrial Co., Ltd. | A method of forming a bump having a rugged side and a semiconductor device having the bump, and a method of mounting a semiconductor unit and a semiconductor device |
| CN1648754A (en) * | 2005-03-08 | 2005-08-03 | 友达光电股份有限公司 | Conductive convex block and display panel |
| CN100345292C (en) * | 2005-11-02 | 2007-10-24 | 友达光电股份有限公司 | Chip pressing structure and its shaping method and electronic installation |
| CN100416343C (en) * | 2004-01-21 | 2008-09-03 | 友达光电股份有限公司 | Structure for increasing reliability of metal connecting line |
-
2014
- 2014-12-12 CN CN201410763509.1A patent/CN104465424A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0316912A2 (en) * | 1987-11-18 | 1989-05-24 | Casio Computer Company Limited | A bump electrode structure of a semiconductor device and a method for forming the same |
| JPH02177546A (en) * | 1988-12-28 | 1990-07-10 | Fujitsu Ltd | Manufacture of semiconductor integrated circuit |
| EP0616363A1 (en) * | 1993-01-28 | 1994-09-21 | Matsushita Electric Industrial Co., Ltd. | A method of forming a bump having a rugged side and a semiconductor device having the bump, and a method of mounting a semiconductor unit and a semiconductor device |
| US6088236A (en) * | 1993-01-28 | 2000-07-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having a bump having a rugged side |
| CN100416343C (en) * | 2004-01-21 | 2008-09-03 | 友达光电股份有限公司 | Structure for increasing reliability of metal connecting line |
| CN1648754A (en) * | 2005-03-08 | 2005-08-03 | 友达光电股份有限公司 | Conductive convex block and display panel |
| CN100345292C (en) * | 2005-11-02 | 2007-10-24 | 友达光电股份有限公司 | Chip pressing structure and its shaping method and electronic installation |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| CB02 | Change of applicant information |
Address after: Jiangsu province Nantong City Chongchuan road 226004 No. 288 Applicant after: Tongfu Microelectronics Co., Ltd. Address before: Jiangsu province Nantong City Chongchuan road 226004 No. 288 Applicant before: Fujitsu Microelectronics Co., Ltd., Nantong |
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| COR | Change of bibliographic data | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150325 |