CN104393060A - Hidden crack-preventing photovoltaic module - Google Patents
Hidden crack-preventing photovoltaic module Download PDFInfo
- Publication number
- CN104393060A CN104393060A CN201410689922.8A CN201410689922A CN104393060A CN 104393060 A CN104393060 A CN 104393060A CN 201410689922 A CN201410689922 A CN 201410689922A CN 104393060 A CN104393060 A CN 104393060A
- Authority
- CN
- China
- Prior art keywords
- thin layer
- silicon carbide
- photovoltaic module
- solar cell
- screen cloth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000004744 fabric Substances 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000000835 fiber Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 241000446313 Lamella Species 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000012358 sourcing Methods 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000005022 packaging material Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920003257 polycarbosilane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a hidden crack-preventing photovoltaic module. A silicon carbide thin layer relatively high in toughness is deposited on the back of a solar cell to enhance the strength of the solar cell, or silicon carbide thin layer screen cloth is added to an assembly packaging material to greatly improve the hidden crack preventing capability of the assembly without affecting heat dissipation of the assembly. A greater thinning space is provided for other materials of the assembly, such as glass, EVA, the backplane and the solar cell. The process and the steps of producing the cell and the assembly are not changed and the technology sourcing cost is low. In the future, with the continuous reduction of the thickness of the solar cell and the thickness of the other materials, the enhancement structure can be used increasingly.
Description
Technical field
The present invention relates to a kind of photovoltaic module and preparation method thereof, be specially and a kind of anti-hiddenly split assembly preparation method.
Background technology
Along with the development in crystal silicon solar market, increasing quality problems are exposed, also more and more deep for photovoltaic cell component quality understanding in the industry.Hidden the splitting of current photovoltaic module is just subject to more multiple looking, and the phenomenon of sliver appears in the solar battery sheet be namely encapsulated in photovoltaic module.Due to the existence of encapsulation and the viscosity of EVA, between the battery each several part fragment of generation sliver, still keep original combination and conduction.Can't see too large change from outward appearance and power output in short-term, electroluminescence tester table (EL) only can be used to measure.But exist in the long run between cell piece sliver and be thoroughly separated by the effect of expanding with heat and contract with cold the hidden danger affecting generating, serious may cause partial piece not conducting, affects power, even produces hot spot generation fire hazard.
Power stations a large amount of has in the recent period found the visual condition of " lightning line " by name, becomes manufacturer, installation business and power station owner and pays close attention to and bone of contention.Through researching and analysing discovery, although lightning line not exclusively hidden splitting cause, invariably accompany the hidden appearance split and occurring.Although current little on generated output impact.But affect outward appearance, cause client's acceptance to be deteriorated, other performance and potential safety hazard may be brought for a long time.
The hidden Producing reason that splits is caused to have a lot, the environmental stress after the production of photovoltaic module, packaging, transport, installation and installation: wind, snow, hail and variations in temperature etc. all likely cause hidden splitting.But return and make a thorough investigation of the end, the self-strength of photovoltaic module still needs to improve.
Current industrial trend is the reduction of manufacturing cost, and the reduction of manufacturing cost not only requires the lifting of photoelectric conversion efficiency also to require the reduction of every cost of raw material.Most of raw material producer all have employed the means reducing material stock thickness or consumption and carries out, and this development trend reduce further the structural strength of assembly.Material is thinning and lifting that is assembly self-strength is conflicting.
Summary of the invention
The object of the invention is to provide a kind of low cost to realize the anti-hidden method splitting photovoltaic module, the higher carborundum thin layer of toughness is adopted to deposit to the back side of solar cell, increase the intensity of solar cell itself, or adopt carborundum thin layer screen cloth to join in component package material, improve intensity and the toughness of assembly self.
A kind of anti-hidden technical scheme split photovoltaic module and adopt of the present invention: at least one comprising following structure:
1. in solar cell back face, the position outside cell piece periphery and backplate arranges one deck thin layer carborundum;
2., in establishment of component process, silicon carbide fibre layer is set between solar cell lamella and backboard.
1. structure is specially: deposit one deck thin layer carborundum in solar cell back face, uses baffle plate protection solar battery sheet periphery and backplate part during deposition; Then, adopt general components production process for encapsulating, carry out series welding, group version, lamination and group frame operation, prepare solar module.
Deposit one deck thin layer carborundum in solar cell back face, depositional mode adopts spraying plating, evaporation or CVD mode.
The thin layer carborundum thickness of deposition is 0.1 ~ 1000 micron.
Structure 2. middle silicon carbide fibre layer is the thin layer screen cloth that silicon carbide fibre is made into.
2. structure is specially the thin layer screen cloth be made into by silicon carbide fibre, is placed between solar battery sheet layer and assembly backboard in assembly group version operation, each laying one deck EVA between the thin layer screen cloth that solar cell lamella, silicon carbide fibre are made into and assembly backboard.
The silicon carbide fibre diameter used is 1 nanometer ~ 500 micron.
The thin layer screen cloth thickness that silicon carbide fibre is made into is 0.1 ~ 1000 micron.
The thin layer screen cloth that silicon carbide fibre is made into has hole, and hole maximum gauge is 5 nanometer ~ 1 centimetre, and it is 30 ~ 80% that total void area accounts for screen cloth area ratio.
Between solar cell lamella and glass, EVA thickness is identical with general components, and the EVA thickness between the thin layer screen cloth that solar cell lamella and silicon carbide fibre are made into, between the thin layer screen cloth that is made into of silicon carbide fibre and assembly backboard is 30% ~ 100% of EVA layer thickness between cell piece and glass.
The invention has the beneficial effects as follows: all higher carbofrax material of working strength toughness of the present invention, to strengthen intensity and the toughness of assembly, significantly improves the anti-hidden ability of splitting of assembly itself, do not affect the heat radiation of assembly simultaneously.Larger thinning space is provided to other material glass of assembly, EVA, backboard and solar cell.Battery production and assembly production technology operation are without the need to changing, and technological sourcing cost is low.Following along with solar cell thickness with the lasting reduction of the thickness of other materials, this reinforcement structure can be subject to increasing utilization.
accompanying drawing illustrates:
Figure 1 shows that conventional photovoltaic assemblies manufacturing process schematic diagram;
Figure 2 shows that photovoltaic module structure of the present invention 1. schematic diagram;
Figure 3 shows that photovoltaic module structure of the present invention 2. schematic diagram;
Wherein, 1, glass; 2, EVA; 3, backboard; 4, welding; 205, thin layer carborundum; 6, solar battery sheet; 305, the thin layer screen cloth that silicon carbide fibre is made into.
embodiment:
In order to understand the present invention better, below in conjunction with accompanying drawing and example, technical scheme of the present invention is described.
Conventional module production process is:
Series welding: solar battery sheet 6 is connected in a row by welding 4.
Group version: by having gone here and there on one deck EVA2 that solar battery sheet 6 is arranged on the glass 1 and its that have laid, having been connected by welding 4 again between many row's cell piece strings, so just all solar battery sheets 6 being connected.On solar battery sheet 6, lay one deck EVA2 more afterwards, finally lay a layer assembly backboard 3.
Lamination: the structure that group version is good is placed in laminating machine carries out vacuum hotpressing.
Play frame: the semi-finished product surrounding good at lamination installs aluminum alloy frame.
So the primary structure of general components is glass 1-EVA-solar battery sheet 6-EVA2-backboard 3 structure.
Embodiment 1:
Adopt conventional solar battery sheet 6, by the mode of solar battery sheet 6 back side by chemical vapour deposition (CVD) CVD, employing Polycarbosilane is raw material, at solar battery sheet 6 backside deposition one deck thin layer carborundum 205.Reaction temperature is 450 DEG C.Deposit thickness is 10 μm.Adopt baffle plate during deposition, block solar battery sheet 6 backplate and surrounding, so that weld and prevent electric leakage.
By the solar cell after this plated film, through general components manufacturing process series welding, group version, lamination, play frame after, just defining of the present invention resisting hiddenly splits assembly.
Embodiment 2:
In general components group version operation, after laying according to the order of glass 1-EVA2-solar battery sheet 6, first lay the thinning EVA2 of one deck, thickness is 0.2mm,
Then lay the thin layer screen cloth 305 that one deck is made into by silicon carbide fibre, screen cloth adopts silicon nitride fiber diameter to be 1 micron, and the screen cloth thickness be made into is 3 microns, and mesh diameter is 1mm, and mesh pore area accounts for 50% of screen cloth area;
Then lay the thinning EVA2 of one deck, thickness is 0.2mm, one deck general components TPT backboard 3.So just to be successful and of the present inventionly anti-ly hiddenly to split assembly.
Claims (10)
1. anti-hiddenly split a photovoltaic module, it is characterized in that, comprise at least one of following structure:
1. in solar cell back face, the position outside cell piece periphery and backplate arranges one deck thin layer carborundum;
2., in establishment of component process, silicon carbide fibre layer is set between solar cell lamella and backboard.
2. one according to claim 1 resists and hiddenly splits photovoltaic module, and it is characterized in that, 1. structure is specially: deposit one deck thin layer carborundum in solar cell back face, uses baffle plate protection solar battery sheet periphery and backplate part during deposition; Then, adopt general components production process for encapsulating, carry out series welding, group version, lamination and group frame operation, prepare solar module.
3. one according to claim 2 resists and hiddenly splits photovoltaic module, and it is characterized in that, deposit one deck thin layer carborundum in solar cell back face, depositional mode adopts spraying plating, evaporation or CVD mode.
4. one according to claim 3 resists and hiddenly splits photovoltaic module, and it is characterized in that, the thin layer carborundum thickness of deposition is 0.1 ~ 1000 micron.
5. one according to claim 1 resists and hiddenly splits photovoltaic module, it is characterized in that, structure 2. in silicon carbide fibre layer be the thin layer screen cloth that silicon carbide fibre is made into.
6. one according to claim 5 resists and hiddenly splits photovoltaic module, it is characterized in that, the thin layer screen cloth that silicon carbide fibre is made into, be placed between solar battery sheet layer and assembly backboard in assembly group version operation, each laying one deck EVA between the thin layer screen cloth that solar cell lamella, silicon carbide fibre are made into and assembly backboard.
7. one according to claim 6 resists and hiddenly splits photovoltaic module, and it is characterized in that, the silicon carbide fibre diameter used is 1 nanometer ~ 500 micron.
8. one according to claim 7 resists and hiddenly splits photovoltaic module, and it is characterized in that, the thin layer screen cloth thickness that silicon carbide fibre is made into is 0.1 ~ 1000 micron.
9. one according to claim 8 resists and hiddenly splits photovoltaic module, and it is characterized in that the thin layer screen cloth that silicon carbide fibre is made into has hole, hole maximum gauge is 5 nanometer ~ 1 centimetre, and it is 30 ~ 80% that total void area accounts for screen cloth area ratio.
10. one according to claim 6 resists and hiddenly splits photovoltaic module, it is characterized in that, between solar cell lamella and glass, EVA thickness is identical with general components, and the EVA thickness between the thin layer screen cloth that solar cell lamella and silicon carbide fibre are made into, between the thin layer screen cloth that is made into of silicon carbide fibre and assembly backboard is 30% ~ 100% of EVA layer thickness between cell piece and glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410689922.8A CN104393060B (en) | 2014-11-26 | 2014-11-26 | Hidden crack-preventing photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410689922.8A CN104393060B (en) | 2014-11-26 | 2014-11-26 | Hidden crack-preventing photovoltaic module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104393060A true CN104393060A (en) | 2015-03-04 |
| CN104393060B CN104393060B (en) | 2017-04-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410689922.8A Active CN104393060B (en) | 2014-11-26 | 2014-11-26 | Hidden crack-preventing photovoltaic module |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129131A (en) * | 2016-08-23 | 2016-11-16 | 江苏亚太新能源科技有限公司 | A kind of solar battery glass panel |
| CN108598204A (en) * | 2018-04-19 | 2018-09-28 | 安徽六和同心风能设备有限公司 | A kind of photovoltaic module and its preparation process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080115827A1 (en) * | 2006-04-18 | 2008-05-22 | Itn Energy Systems, Inc. | Reinforcing Structures For Thin-Film Photovoltaic Device Substrates, And Associated Methods |
| CN101976693A (en) * | 2010-09-03 | 2011-02-16 | 黄生荣 | Structure of ultra-thin crystal-silicon solar battery pack and packaging method thereof |
| CN202712218U (en) * | 2012-06-08 | 2013-01-30 | 中国电子科技集团公司第十八研究所 | Ultrathin flexible crystal silicon solar cell module |
-
2014
- 2014-11-26 CN CN201410689922.8A patent/CN104393060B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080115827A1 (en) * | 2006-04-18 | 2008-05-22 | Itn Energy Systems, Inc. | Reinforcing Structures For Thin-Film Photovoltaic Device Substrates, And Associated Methods |
| CN101976693A (en) * | 2010-09-03 | 2011-02-16 | 黄生荣 | Structure of ultra-thin crystal-silicon solar battery pack and packaging method thereof |
| CN202712218U (en) * | 2012-06-08 | 2013-01-30 | 中国电子科技集团公司第十八研究所 | Ultrathin flexible crystal silicon solar cell module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129131A (en) * | 2016-08-23 | 2016-11-16 | 江苏亚太新能源科技有限公司 | A kind of solar battery glass panel |
| CN108598204A (en) * | 2018-04-19 | 2018-09-28 | 安徽六和同心风能设备有限公司 | A kind of photovoltaic module and its preparation process |
| CN108598204B (en) * | 2018-04-19 | 2020-04-28 | 黄山富乐新能源科技有限公司 | Photovoltaic module and preparation process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104393060B (en) | 2017-04-26 |
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