CN104377144B - The SRP analysis methods of long and narrow figure - Google Patents
The SRP analysis methods of long and narrow figure Download PDFInfo
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- CN104377144B CN104377144B CN201410604621.0A CN201410604621A CN104377144B CN 104377144 B CN104377144 B CN 104377144B CN 201410604621 A CN201410604621 A CN 201410604621A CN 104377144 B CN104377144 B CN 104377144B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The invention discloses a kind of SRP analysis methods of long and narrow figure, comprise the following steps：It is determined that grinding angle；Long and narrow graphics field at laser labelling, grinding and SRP probe tests are until the vertical depth for grinding is more than the depth for needing analysis repeatedly；The data obtained to probe test carry out arranged in sequence and obtain original depth resistance Value Data；SRP data processings are carried out to initial data and obtains final distribution curve.For the silicon chip without special monitoring pattern, after the completion of product manufacturing, when appearance need to investigate situation the problems such as injection is spread, can effectively be verified, it is to avoid the work that flow investigation etc. takes time and effort again, effectively be accelerated the process of product yield and process improving.
Description
Technical field
The present invention relates to IC manufacturing field, SRP points of a kind of long and narrow figure for silicon chip doping is particularly related to
Analysis method.
Background technology
SRP (Spreading Resistance Profiling Spreading resistances) is that the section of silicon chip sample is carried out
Double probe tests, so as to draw a kind of analysis method of the depth profiles of carrier concentration and resistivity, as shown in figure 1, its work
Make process as follows：One, determine sample 2 and base 1, the wherein graphic aspect size of sample 2 will be more than hundreds of microns, to ensure
Test inclined-plane 6 can cover required depth, and base 1 is the module with specified angle, such as 17 ', 34 ', 1 ° 9 ', 2 ° 52 ' etc.；Two,
Sample is pasted onto on base 1 and is ground, and obtains the inclined-plane 6 with the same tilt angle of base 1；Three, sample is carried out into SRP boards
Test, two probes of wherein SRP are moved and contacted on inclined-plane by step-by-step movement, there is 5mv voltages between two pins, are surveyed by electric current
Amount conversion etc., obtains the resistance value between two pins；Four, the resistance value is converted to resistivity and carrier concentration by calibration curve,
And pin contacts location every time, by angle and distance transform, the depth value of pin correspondence position is obtained.Data above is comprehensive
Close, so that it may obtain the resistivity of sample or the depth profile curve (such as Fig. 2) of carrier concentration.
SRP or SIMS technologies cannot all realize the analysis to long and narrow figure, and reason is as follows：
Run into the carrier concentration or resistivity that need to understand long and narrow figure (width ＜ 50um, the figure of length >=100um)
Depth profile when (such as there is low yield in wafer or characteristic deteriorates, and suspect doping failure, and during silicon chip design and be not ready to special
When figure is analyzed for carrying out SIMS or SRP), because graphic width or area are too small, conventional SRP points of analysis is not applicable directly
(usually requiring that figure in 200um × more than 200um), SIMS is used for analytical element concentration rather than carrier concentration, excessively narrow
Figure long is equally unfavorable for analysis, does not apply to.Common method is：1., by selecting mating plate flow again, doping is reproduced related
Technical process, subsequently carries out correlation analysis to mating plate；2. chip or silicon chip domain are redesigned, wherein, special SRP prisons is put into
Big figure is used in control, when silicon chip goes wrong, doping situation is understood by monitoring the big figure of implantation；Both approaches are all deposited
In financial resources, time cost problem high, while both approaches are difficult to cover the monitoring of whole wafer.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of SRP analysis methods of long and narrow figure, are realized to silicon chip
The carrier concentration of upper long and narrow figure or the depth distribution analysis of resistivity.
To solve the above problems, the SRP analysis methods of long and narrow figure of the present invention are comprised the following steps：
The first step, it is determined that the angle [alpha] of grinding base；
Second step, mark is carved on four edge angles on long and narrow figure to be analyzed with laser marking machine, is marked long and narrow
Graphics field；
3rd step, first time grinding is carried out using the base for determining angle, the boundary line of the inclined-plane being ground and upper surface
Ensure to be located in the graphics field of mark, parallel and close to the figure side long of mark；
4th step, carries out the tests of the first time SRP after first time grinding, and test scope is since boundary line to the figure of mark
Shape sideline long stops, and by observation by light microscope pin trace, confirms the pin trace point in graphics field, the serial number 1- of each point
N1,1 is the point on boundary line, and N1 is the point in graphic limit, and corresponding test number of effective points is n1, and the effective depth of test is
d1；
5th step, on the basis of being ground first, secondary propulsion grinding is carried out to inclined-plane；
6th step, carries out second SRP test, and test scope stops since boundary line to the figure sideline long of mark,
By observation by light microscope pin trace, the pin trace serial number N21-N22 in graphics field is confirmed, to ensure second test
MTD region in figure can be connected with the MTD region of first time test；
7th step, on the basis of being ground at second, the propulsion grinding of third time is carried out to inclined-plane；
8th step, carries out third time SRP tests, and test scope stops since boundary line to the figure sideline long of mark,
By observation by light microscope pin trace, the serial number N31-N32 in graphics field is confirmed, it is ensured that in the figure of third time test
MTD region can be connected with the MTD region of second test；
9th step, repeating the above steps is carried out, carry out the 4th, 5 ..., n grinding repeatedly and test, until n-th is ground
Boundary line exceedes depth to be analyzed to the vertical depth in the figure sideline long of mark after mill, when being finally completed test, by optics
Micro- sem observation pin trace, confirms the serial number Nn1-Nn2 in graphics field, it is ensured that the test in the figure of n-th test
Depth areas can be connected with the MTD region of (n-1)th test, and the points of test are nn；
Tenth step, the numerical value for each time being tested the different depth section for obtaining is ranked up combination by each data point sequence number, obtains
To the resistance depth profile of figure to be measured；
11st step, SRP data processings are carried out to resistance depth profile, obtain resistivity, the depth of carrier concentration point
Cloth characteristic curve.
Further, in the first step, angle [alpha] meetsDmin is the minimum in figure to be measured
Junction depth or diffusion depth value, S are worth for the test step footpath of SRP；Ensure at least 20 data points in each concern level, depth is missed
Difference control is ≤5%.
Further, the second step, the depth of mark will be deeper than depth to be measured, it is ensured that after follow-up repeatedly grinding
SRP analyses can be accurately positioned out the border of long and narrow graphics field.
Further, the 4th step, the method for determining this section of depth information D1 is located at by light microscopy
Pin trace point sequence number and quantity in figure to be measured, each pin trace have unique and one-to-one sequence number, depth value, SRP resistance
Value, whether pin trace point is judged in figure by laser labelling, and the sequence number of test acquisition for the first time, depth, resistance data are to be measured
The top layer data of long and narrow figure.
Further, the 6th step, by observation by light microscope pin trace, confirms that N21 is less than N1, it is ensured that second test
Figure in MTD region with first time test MTD region can be connected.
Further, the 9th step, determine n-th grinding after test determination n-th section of depth information method be by
The sequence number and quantity of pin trace point are established, and in this section of depth, terminal is that bosom pin trace point is by treating that light microscope is established
Mapping shape boundary pin trace；Starting point is (n-1)th terminal of MTD section.
Further, obtaining the method for the whole resistance depth profile of long and narrow figure is, n-th test obtains representing depth
Data point, according to the ascending arrangement of numeric order, 1-N1-N22-N32- ...-Nn2, wherein Nn2 point are to represent figure to be measured
The data point of bosom information, depth value, resistance value and sequence number are corresponded and obtain depth by zero to the one of depth location to be measured
Serial depth-SRP resistance values；By SRP data processing softwares, a series of depth-SRP resistance values are processed, treated
The depth of mapping shape, resistivity carrier concentration characteristic.
The SRP analysis methods of long and narrow figure of the present invention, using repeatedly grinding, repeatedly measurement, measurement every time is obtained
The distribution of resistance of different depth position in figure；Then each measurement data is pressed depth size, is combined, obtain figure
Complete S RP resistance, depth profile；SRP software processings finally are carried out to resistance, depth profile, the load of the long and narrow figure is obtained
Stream, the depth profile curve of resistivity, for the silicon chip without special monitoring pattern, after the completion of product manufacturing, occur needing
During the situation of the problems such as investigation injection diffusion, can effectively be verified, it is to avoid the work that flow investigation etc. takes time and effort again,
Effectively accelerate the process of product yield and process improving.
Brief description of the drawings
Fig. 1 is conventional SRP test schematic diagrams.
Fig. 2 is conventional SRP test results.
Fig. 3 is long and narrow pattern specimens generalized section.
Fig. 4 is long and narrow pattern specimens schematic top plan view.
Fig. 5~11 are test analysis step schematic diagrams of the present invention.
Figure 12 is flow chart of steps of the present invention.
Description of reference numerals
1 is base, and 2 is silicon sample, and 3 is former silicon chip surface, and 4 is boundary line, and 5 is probe, and 6 is inclined-plane, and 7 is PN junction.
Specific embodiment
The SRP analysis methods of long and narrow figure of the present invention, comprise the following steps：
The first step, for long and narrow pattern specimens, as shown in Figures 3 and 4, it is determined that the angle [alpha] of grinding base, α needs to meetDmin is minimum junction depth or diffusion depth value (micron) in figure to be measured, and S is the test step footpath of SRP
Value, is typically 2.5 microns, and formula can ensure at least 20 data points in each concern level, depth error control≤
5%.
Second step, on figure to be analyzed, on four edge angles, mark is carved with laser marking machine.As shown in figure 5,
The depth of mark is greater than depth to be measured, for ensuring that follow-up related SR P analyses are carried out in figure.
3rd step, carries out first time grinding, the boundary line on inclined-plane and surface will close to figure sideline, and still in figure,
Boundary line is parallel with side long.
4th step, carry out the SRP after first time grinding test, as shown in fig. 6, test scope since boundary line to figure
Sideline stops, and wherein figure sideline is confirmed by the mark in 2.By observation by light microscope pin trace, confirm to be located in graphics field
Sequence number 1-N1, corresponding points be n1.Each data point includes unique and one-to-one sequence number, depth in SRP tests
Value, resistance value；D1 sections of D0-D1 depth locations of figure to be measured of SRP resistance values have just been obtained by sequence number and points, and (D0 is
The sign point of patterned surface position).
5th step, on the basis of first time grinds, carries out second grinding propulsion.
6th step, carries out the second test after second grinding, and test scope stops since boundary line to figure sideline,
By observation by light microscope pin trace, the serial number N21-N22 in graphics field is confirmed, control D0D2 is less than D0D1 ', with true
The depth areas protected in second test figure can be connected with a MTD region, that is, realize N21 ＜ N1.Such as Fig. 7 institutes
Show, take the point of serial number N1 to N22, it is n2 to count, as the increased depth value d2 of second test.
7th step, on the basis of being ground at second, carries out third time grinding propulsion.
8th step, carries out three times after third time grinding tests, and test scope stops since boundary line to figure sideline,
By observation by light microscope pin trace, the serial number N31-N32 in graphics field is confirmed, control D0D3 is less than D0D2 ', with true
The depth areas protected in three resolution charts can be connected with second test depth areas, that is, realize N31 ＜ N22.Such as Fig. 8 institutes
Show, take the point of serial number N22 to N32, it is n3 to count, as the increased depth value d3 of second test.
9th step, repeats above-mentioned propulsion grinding and testing procedure, repeated multiple times grinding and test is carried out, until D0Dn '
Depth exceed depth to be analyzed.When last test is completed, by observation by light microscope pin trace, confirm to be located in graphics field
Serial number Nn1-Nn2, control D0Dn is less than D0D (n-1) ', to ensure the depth areas in n resolution chart and n-1 times
MTD region can be connected, that is, realize Nn1 ＜ N (n-1) 2.As shown in figure 9, taking the point of serial number N (n-1) 2 to Nn2, point
Number is nn, as the n increased depth value dn of test.
Tenth step, each time is tested the combinations of values of the different depth section for obtaining together, i.e., each data point is pressed sequence number
Arrangement：1-N1-N22-N32- ...-Nn2, wherein Nn2 point are the data points for representing figure bosom to be measured information.Depth value, electricity
Resistance is corresponded with sequence number, and so as to obtain the resistance depth profile of figure to be measured, as shown in Figure 10, being directed to sample is carried out
The data that 6 grinding tests are obtained, each section of curve represents the data tested after each step propulsion, and abscissa is propulsion depth.
11st step, to obtaining resistance depth profile, using SRP data processing softwares, can obtain electricity as shown in figure 11
The depth profile curve of resistance rate, carrier concentration.
The preferred embodiments of the present invention are these are only, is not intended to limit the present invention.Come for those skilled in the art
Say, the present invention there can be various modifications and variations.It is all any modifications within the spirit and principles in the present invention, made, equivalent
Replace, improve etc., should be included within the scope of the present invention.
Claims (7)
1. a kind of SRP analysis methods of long and narrow figure, the long and narrow figure be finger widths less than 50 microns, length is not less than 100
The figure of micron, it is characterised in that：Comprise the following steps：
The first step, it is determined that the angle [alpha] of grinding base；
Second step, mark is got on four edge angles on long and narrow figure to be analyzed with laser marking machine, marks long and narrow figure
Region；
3rd step, first time grinding is carried out using the base for determining angle, and the inclined-plane being ground ensures with the boundary line of upper surface
In the graphics field of mark, parallel and close to the figure side long of mark；
4th step, carries out the tests of the first time SRP after first time grinding, and figure of the test scope to mark since boundary line is long
Sideline stops, and by observation by light microscope pin trace, confirms the pin trace point in graphics field, each point serial number 1-N1, and 1 to hand over
Point in boundary line, N1 is the point in graphic limit, and corresponding test number of effective points is n1, and the effective depth of test is d1；
5th step, on the basis of being ground first, secondary propulsion grinding is carried out to inclined-plane；
6th step, carries out second SRP test, and test scope stops since boundary line to the figure sideline long of mark, by light
Micro- sem observation pin trace is learned, the pin trace serial number N21-N22 in graphics field is confirmed, to ensure second figure of test
Interior MTD region can be connected with the MTD region of first time test；
7th step, on the basis of being ground at second, the propulsion grinding of third time is carried out to inclined-plane；
8th step, carries out third time SRP tests, and test scope stops since boundary line to the figure sideline long of mark, by light
Micro- sem observation pin trace is learned, the serial number N31-N32 in graphics field is confirmed, it is ensured that the survey in the figure of third time test
Examination depth areas can be connected with the MTD region of second test；
9th step, repeat the above steps the grinding and test for carrying out repeatedly, until figure of the boundary line to mark after n-th grinding
The vertical depth in sideline long exceedes depth to be analyzed, when being finally completed test, by observation by light microscope pin trace, confirms to be located at
Serial number Nn1-Nn2 in graphics field, it is ensured that MTD region and (n-1)th test in the figure of n-th test
MTD region can be connected, and the points of test are nn；
Tenth step, the numerical value for each time being tested the different depth section for obtaining is ranked up combination by each data point sequence number, is treated
The resistance depth profile of mapping shape；
11st step, SRP data processings are carried out to resistance depth profile, obtain resistivity, the depth profile of carrier concentration special
Linearity curve.
2. SRP analysis methods of long and narrow figure as claimed in claim 1, it is characterised in that：In the first step, grinding bottom
The angle [alpha] of seat meetsDmin is minimum junction depth or diffusion depth value in figure to be measured, and S is the survey of SRP
Try footpath is worth；Ensure at least 20 data points in each concern level, depth error is controlled≤5%.
3. SRP analysis methods of long and narrow figure as claimed in claim 1, it is characterised in that：The second step, the depth of mark
It is greater than depth to be measured, it is ensured that the SRP analyses after follow-up repeatedly grinding can be accurately positioned out the border of long and narrow graphics field.
4. SRP analysis methods of long and narrow figure as claimed in claim 1, it is characterised in that：4th step, it is determined that effectively deep
The method for spending d1 is the pin trace point sequence number and quantity being located at by light microscopy in figure to be measured, and each pin trace has only
One and one-to-one sequence number, depth value, SRP resistance values, whether pin trace point is judged in figure by laser labelling, survey for the first time
The sequence number of examination acquisition, depth, resistance data are the top layer data of long and narrow figure to be measured.
5. SRP analysis methods of long and narrow figure as claimed in claim 1, it is characterised in that：6th step, by optical microphotograph
Sem observation pin trace, confirms that N21 is less than N1, it is ensured that MTD region and the survey of test for the first time in second figure of test
Examination depth areas can be connected.
6. SRP analysis methods of long and narrow figure as claimed in claim 1, it is characterised in that：9th step, determines n-th
The method that n-th section of depth information of determination is tested after grinding is sequence number and quantity by pin trace point establishes, in this section of depth, eventually
Point is that bosom pin trace point is the graphic limit pin trace to be measured established by light microscope；Starting point is (n-1)th MTD
The terminal of section.
7. SRP analysis methods of long and narrow figure as claimed in claim 1, it is characterised in that：Obtain the whole electricity of long and narrow figure
Hindering the method for depth profile is, n-th test obtains representing the data point of depth, according to the ascending arrangement of numeric order, 1-
N1-N22-N32- ...-Nn2, wherein Nn2 point are the data point for representing figure bosom to be measured information, depth value, resistance value and sequence
Number one-to-one corresponding obtains a series of depth-SRP resistance values that depth is by zero to depth location to be measured；It is soft by SRP data processings
A series of depth-SRP resistance values are processed by part, obtain depth, the resistivity carrier concentration characteristic of figure to be measured.
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| CN106980046A (en) * | 2016-01-15 | 2017-07-25 | 无锡华润上华半导体有限公司 | A kind of method of testing of the resistivity of semi-conducting material |
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| US6052653A (en) * | 1997-07-11 | 2000-04-18 | Solid State Measurements, Inc. | Spreading resistance profiling system |
| CN102213732A (en) * | 2010-03-31 | 2011-10-12 | 新科实业有限公司 | Method for measuring magnetic head resistance of different-type long bars by using public measuring appliance |
| CN103837807A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Method for measuring carrier concentration distribution in deep trench |
| CN103837808A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Doping failure analysis method |
| CN104070448A (en) * | 2013-03-28 | 2014-10-01 | 新科实业有限公司 | Fixture for grinding of elongated members, grinding device of elongated members, and grinding method of elongated members |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06342010A (en) * | 1993-05-31 | 1994-12-13 | Sony Corp | Measuring method of electric characteristic |
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- 2014-10-30 CN CN201410604621.0A patent/CN104377144B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6052653A (en) * | 1997-07-11 | 2000-04-18 | Solid State Measurements, Inc. | Spreading resistance profiling system |
| CN102213732A (en) * | 2010-03-31 | 2011-10-12 | 新科实业有限公司 | Method for measuring magnetic head resistance of different-type long bars by using public measuring appliance |
| CN103837807A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Method for measuring carrier concentration distribution in deep trench |
| CN103837808A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Doping failure analysis method |
| CN104070448A (en) * | 2013-03-28 | 2014-10-01 | 新科实业有限公司 | Fixture for grinding of elongated members, grinding device of elongated members, and grinding method of elongated members |
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