CN104377144A - SRP analyzing method for long and narrow graph - Google Patents
SRP analyzing method for long and narrow graph Download PDFInfo
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- CN104377144A CN104377144A CN201410604621.0A CN201410604621A CN104377144A CN 104377144 A CN104377144 A CN 104377144A CN 201410604621 A CN201410604621 A CN 201410604621A CN 104377144 A CN104377144 A CN 104377144A
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention discloses an SRP analyzing method for a long and narrow graph. The method comprises the following steps that a grinding angle is determined, and a narrow and long graph area is marked through a laser. Grinding and SRP probe testing are repeatedly carried out till the grinding perpendicular depth is larger than the depth needing to be analyzed; data obtained through probe testing are arranged in sequence to obtain original depth-resistance value data; SRP data processing is carried out on the original data to obtain a final distributive curve. For a silicon wafer with on special monitoring graph, after a product is manufactured, the injecting and diffusing and other problems need to be surveyed, verification can be effectively carried out, repeated current piece surveying and other time-consuming and labor-consuming work is avoided, the product yield is effectively increased, and the technology improving process is effectively accelerated.
Description
Technical field
The present invention relates to IC manufacturing field, refer to a kind of SRP analytical method of the long and narrow figure for silicon chip doping especially.
Background technology
SRP (Spreading Resistance Profiling Spreading resistance) carries out two probe test to the cross section of silicon chip sample, thus draw a kind of analytical method of the depth profiles of carrier concentration and resistivity, as shown in Figure 1, its course of work is as follows: one, determine sample 2 and base 1, wherein the graphic aspect size of sample 2 will more than hundreds of micron, with guarantee test inclined-plane 6 can cover needed for the degree of depth, base 1 is the module of band specified angle, as 17 ', 34 ', 1 ° 9 ', 2 ° 52 ' etc.; Two, sample is pasted onto on base 1 and grinds, and obtains the inclined-plane 6 with base 1 same tilt angle; Three, sample enters SRP board and tests, and wherein two probes of SRP are moved by stepping and contact on inclined-plane, there is 5mv voltage, by current measurement conversion etc., obtain the resistance value between two pins between two pins; Four, this resistance value is converted to resistivity and carrier concentration through calibration curve, and pin contacts residing position at every turn, by angle and distance transform, obtains the depth value of pin correspondence position.Above aggregation of data, just can obtain the resistivity of sample or the depth distribution curve (as Fig. 2) of carrier concentration.
SRP or SIMS technology all cannot realize the analysis to long and narrow figure, and reason is as follows:
Run into and need understand long and narrow figure (width < 50um, the figure of length >=100um) carrier concentration or the depth distribution of resistivity time (as low yield or characteristic degradation occur wafer, suspect that doping was lost efficacy, and do not prepare dedicated graphics during silicon chip design for when carrying out SIMS or SRP analysis), due to graphic width or area too small, conventional SRP analysis is not directly suitable for (usually requiring that figure is at 200um × more than 200um), SIMS is used for analytical element concentration instead of carrier concentration, too long and narrow figure is unfavorable for analyzing equally, inapplicable.Common method is: 1. by selecting mating plate flow again, reproduces doping allied processes, follow-uply carries out correlation analysis to mating plate; 2. redesign chip or silicon chip domain, wherein, put into special SRP monitoring and use large figure, when silicon chip goes wrong, the large figure implanted by monitoring understands doping situation; All there is financial resources, problem that time cost is high in these two kinds of methods, these two kinds of methods are difficult to the monitoring of covering whole wafer simultaneously.
Summary of the invention
Technical problem to be solved by this invention is the SRP analytical method providing a kind of long and narrow figure, realizes the carrier concentration of figure long and narrow on silicon chip or the depth distribution analysis of resistivity.
For solving the problem, the SRP analytical method of long and narrow figure of the present invention, comprises following steps:
The first step, determines the angle [alpha] of grinding base;
Second step, four edge angles on long and narrow figure to be analyzed carves mark with laser marking machine, marks long and narrow graphics field;
3rd step, utilize determine the base of angle carry out first time grinding, the inclined-plane ground out and the boundary line of upper surface guarantee the graphics field being positioned at mark, parallel and close to mark the long limit of figure;
4th step, the first time SRP carried out after first time grinding tests, test specification stops to the long sideline of the figure of mark from boundary line, by observation by light microscope pin trace, confirm the pin trace point being positioned at graphics field, the sequence number of each point is 1-N1,1 is the point on boundary line, N1 is the point in graphic limit, and corresponding test number of effective points is n1, and the effective depth of test is d1;
5th step, on the basis of the first grinding, carries out secondary propelling grinding to inclined-plane;
6th step, carry out second time SRP test, test specification stops to the long sideline of the figure of mark from boundary line, by observation by light microscope pin trace, confirm that the pin trace sequence number being positioned at graphics field is N21-N22, to ensure that the MTD region in the figure of second time test can be connected with the MTD region that first time tests;
7th step, on the basis of second time grinding, carries out the propelling grinding of third time to inclined-plane;
8th step, carry out third time SRP to test, test specification stops to the long sideline of the figure of mark from boundary line, by observation by light microscope pin trace, confirm that the sequence number being positioned at graphics field is N31-N32, guarantee that the MTD region in the figure of third time test can be connected with the MTD region that second time is tested;
9th step, repetition above-mentioned steps is carried out, carry out the 4th, 5 ..., n grinding repeatedly and test, until boundary line exceedes the degree of depth to be analyzed to the vertical depth in the long sideline of figure of mark after n-th grinding, when finally completing test, by observation by light microscope pin trace, confirm that the sequence number being positioned at graphics field is Nn1-Nn2, guarantee that MTD region in the figure tested for n-th time can be connected with the MTD region to test for (n-1)th time, test count as nn;
Tenth step, the numerical value each time being tested the different depth section obtained carries out sequence combination by each data point sequence number, obtains the resistance depth distribution of figure to be measured;
11 step, carries out SRP data processing to resistance depth distribution, obtains the depth distribution characteristic curve of resistivity, carrier concentration.
Further, in the described first step, angle [alpha] meets
dmin is minimum junction depth in figure to be measured or diffusion depth value, and S is the test step footpath value of SRP; Ensure to have 20 data points at least in each concern level, depth error controls≤5%.
Further, described second step, the degree of depth of mark will be deeper than the degree of depth to be measured, guarantees that the SRP after follow-up repeatedly grinding analyzes the border accurately can orienting long and narrow graphics field.
Further, described 4th step, determine that the method for this section of depth information D1 is the pin trace point sequence number and the quantity that are positioned at figure to be measured by light microscopy, each pin trace has uniquely and sequence number, depth value, SRP resistance value one to one, judge pin trace point whether in figure by laser labelling, the sequence number that first time test obtains, the degree of depth, resistance data are the top layer data of long and narrow figure to be measured.
Further, described 6th step, by observation by light microscope pin trace, confirms that N21 is less than N1, guarantees that the MTD region in the figure of second time test can be connected with the MTD region that first time tests.
Further, described 9th step, determine that the method that the n-th section of depth information determined is tested in n-th grinding is afterwards established by the sequence number of pin trace point and quantity, in this section of degree of depth, terminal and bosom pin trace point are the graphic limit pin trace to be measured established by light microscope; Starting point is the terminal of (n-1)th MTD section.
Further, the method obtaining the whole resistance depth distribution of long and narrow figure is, n-th test obtains the data point representing the degree of depth, according to the ascending arrangement of numeric order, 1-N1-N22-N32-...-Nn2, wherein Nn2 point is the data point representing figure bosom to be measured information, and depth value, resistance value and sequence number one_to_one corresponding obtain the degree of depth by zero to a series of degree of depth-SRP resistance values of depth location to be measured; Rely on SRP data processing software, a series of degree of depth-SRP resistance value is processed, obtains the degree of depth of figure to be measured, resistivity carrier concentration characteristic.
The SRP analytical method of long and narrow figure of the present invention, adopts repeatedly grinding, repetitive measurement, each distribution of resistance measuring different depth position in acquisition figure; Then each measurement data is pressed depth size, combine, obtain complete S RP resistance, the depth distribution of figure; Finally the process of SRP software is carried out to resistance, depth distribution, obtain the depth distribution curve of the charge carrier of this long and narrow figure, resistivity, for the silicon chip not having special monitoring pattern, after product manufacturing completes, when appearance need investigate the situation injecting the problems such as diffusion, effectively can verify, avoid the work that flow investigation again etc. takes time and effort, effectively accelerate the process of product yield and process improving.
Accompanying drawing explanation
Fig. 1 is that conventional SRP tests schematic diagram.
Fig. 2 is conventional SRP test result.
Fig. 3 is long and narrow pattern specimens generalized section.
Fig. 4 is long and narrow pattern specimens schematic top plan view.
Fig. 5 ~ 11 are test analysis step schematic diagrames of the present invention.
Figure 12 is flow chart of steps of the present invention.
Description of reference numerals
1 is base, and 2 is silicon samples, and 3 is former silicon chip surfaces, and 4 is boundary lines, and 5 is probes, and 6 is inclined-planes, and 7 is PN junctions.
Embodiment
The SRP analytical method of long and narrow figure of the present invention, comprises following steps:
The first step, for long and narrow pattern specimens, as shown in Figures 3 and 4, determine the angle [alpha] of grinding base, α need meet
dmin is minimum junction depth in figure to be measured or diffusion depth value (micron), and S is the test step footpath value of SRP, is typically 2.5 microns, and formula can ensure to have 20 data points at least in each concern level, and depth error controls≤5%.
Second step, on figure to be analyzed, on four edge angles, carves mark with laser marking machine.As shown in Figure 5, the degree of depth of mark is greater than the degree of depth to be measured, carries out in figure for guaranteeing that follow-up related SR P analyzes.
3rd step, carry out first time grinding, inclined-plane will close to figure sideline with the boundary line on surface, and still in figure, boundary line is parallel with long limit.
4th step, carry out the SRP test after first time grinding, as shown in Figure 6, test specification stops to figure sideline from boundary line, and wherein figure sideline is confirmed by the mark in 2.By observation by light microscope pin trace, confirm the sequence number 1-N1 being positioned at graphics field, corresponding counts as n1.In SRP test, each data point comprises unique and sequence number, depth value, resistance value one to one; By the SRP resistance value (D0 be the sign point of patterned surface position) of sequence number with the d1 section of the D0-D1 depth location just obtaining figure to be measured of counting.
5th step, on the basis of first time grinding, carries out second time and grinds propelling.
6th step, carry out the second test after second time grinding, test specification stops to figure sideline from boundary line, by observation by light microscope pin trace, confirm that the sequence number being positioned at graphics field is N21-N22, control D0D2 is less than D0D1 ', with guarantee in second test figure depth areas can be connected with a MTD region, namely realize N21 < N1.As shown in Figure 7, get the point that sequence number is N1 to N22, count as n2, become the depth value d2 that second test increases.
7th step, on the basis of second time grinding, carries out third time and grinds propelling.
8th step, carry out three tests after third time grinding, test specification stops to figure sideline from boundary line, by observation by light microscope pin trace, confirm that the sequence number being positioned at graphics field is N31-N32, control D0D3 is less than D0D2 ', with guarantee in three resolution charts depth areas can be connected with second test depth areas, namely realize N31 < N22.As shown in Figure 8, get the point that sequence number is N22 to N32, count as n3, become the depth value d3 that second test increases.
9th step, repeats above-mentioned propelling grinding and testing procedure, carries out repeated multiple times grinding and test, until the degree of depth of D0Dn ' exceedes the degree of depth to be analyzed.When last test completes, by observation by light microscope pin trace, confirm that the sequence number being positioned at graphics field is Nn1-Nn2, control D0Dn is less than D0D (n-1) ', with guarantee in n resolution chart depth areas can be connected with n-1 MTD region, namely realize Nn1 < N (n-1) 2.As shown in Figure 9, get the point that sequence number is N (n-1) 2 to Nn2, count as nn, become the depth value dn that n test increases.
Tenth step, tests the combinations of values of the different depth section obtained together by each time, namely each data point is arranged by sequence number: 1-N1-N22-N32-...-Nn2, wherein Nn2 point is the data point representing figure bosom to be measured information.Depth value, resistance value and sequence number one_to_one corresponding, thus obtain the resistance depth distribution of figure to be measured, as shown in Figure 10, be carried out 6 grindings for sample to test the data obtained, each section of curve represents the data of testing after each step advances, and abscissa is for advancing the degree of depth.
11 step, to obtaining resistance depth distribution, utilizes SRP data processing software, can obtain the depth distribution characteristic curve of resistivity as shown in figure 11, carrier concentration.
These are only the preferred embodiments of the present invention, be not intended to limit the present invention.For a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a SRP analytical method for long and narrow figure, is characterized in that: comprise following steps:
The first step, determines the angle [alpha] of grinding base;
Second step, four edge angles on long and narrow figure to be analyzed gets mark with laser marking machine, marks the region of long and narrow figure;
3rd step, utilize determine the base of angle carry out first time grinding, the inclined-plane ground out and the boundary line of upper surface guarantee the graphics field being positioned at mark, parallel and close to mark the long limit of figure;
4th step, the first time SRP carried out after first time grinding tests, test specification stops to the long sideline of the figure of mark from boundary line, by observation by light microscope pin trace, confirm the pin trace point being positioned at graphics field, each point sequence number is 1-N1,1 is the point on boundary line, N1 is the point in graphic limit, and corresponding test number of effective points is n1, and the effective depth of test is d1;
5th step, on the basis of the first grinding, carries out secondary propelling grinding to inclined-plane;
6th step, carry out second time SRP test, test specification stops to the long sideline of the figure of mark from boundary line, by observation by light microscope pin trace, confirm that the pin trace sequence number being positioned at graphics field is N21-N22, to ensure that the MTD region in the figure of second time test can be connected with the MTD region that first time tests;
7th step, on the basis of second time grinding, carries out the propelling grinding of third time to inclined-plane;
8th step, carry out third time SRP to test, test specification stops to the long sideline of the figure of mark from boundary line, by observation by light microscope pin trace, confirm that the sequence number being positioned at graphics field is N31-N32, guarantee that the MTD region in the figure of third time test can be connected with the MTD region that second time is tested;
9th step, repeat above-mentioned steps and carry out grinding repeatedly and test, until boundary line exceedes the degree of depth to be analyzed to the vertical depth in the long sideline of figure of mark after n-th grinding, when finally completing test, by observation by light microscope pin trace, confirm that the sequence number being positioned at graphics field is Nn1-Nn2, guarantee that MTD region in the figure tested for n-th time can be connected with the MTD region to test for (n-1)th time, test count as nn;
Tenth step, the numerical value each time being tested the different depth section obtained carries out sequence combination by each data point sequence number, obtains the resistance depth distribution of figure to be measured;
11 step, carries out SRP data processing to resistance depth distribution, obtains the depth distribution characteristic curve of resistivity, carrier concentration.
2. the SRP analytical method of long and narrow figure as claimed in claim 1, is characterized in that: in the described first step, and grinding angle [alpha] meets
dmin is minimum junction depth in figure to be measured or diffusion depth value, and S is the test step footpath value of SRP; Ensure to have 20 data points at least in each concern level, depth error controls≤5%.
3. the SRP analytical method of long and narrow figure as claimed in claim 1, is characterized in that: described second step, the degree of depth of mark is greater than the degree of depth to be measured, guarantees that the SRP after follow-up repeatedly grinding analyzes the border accurately can orienting long and narrow graphics field.
4. the SRP analytical method of long and narrow figure as claimed in claim 1, it is characterized in that: described 4th step, determine that the method for this section of depth information D1 is the pin trace point sequence number and the quantity that are positioned at figure to be measured by light microscopy, each pin trace has uniquely and sequence number, depth value, SRP resistance value one to one, judge pin trace point whether in figure by laser labelling, the sequence number that first time test obtains, the degree of depth, resistance data are the top layer data of long and narrow figure to be measured.
5. the SRP analytical method of long and narrow figure as claimed in claim 1, it is characterized in that: described 6th step, by observation by light microscope pin trace, confirm that N21 is less than N1, guarantee that the MTD region in the figure of second time test can be connected with the MTD region that first time tests.
6. the SRP analytical method of long and narrow figure as claimed in claim 1, it is characterized in that: described 9th step, determine that the method that the n-th section of depth information determined is tested in n-th grinding is afterwards established by the sequence number of pin trace point and quantity, in this section of degree of depth, terminal and bosom pin trace point are the graphic limit pin trace to be measured established by light microscope; Starting point is the terminal of (n-1)th MTD section.
7. the SRP analytical method of long and narrow figure as claimed in claim 1, it is characterized in that: the method obtaining the whole resistance depth distribution of long and narrow figure is, n-th test obtains the data point representing the degree of depth, according to the ascending arrangement of numeric order, 1-N1-N22-N32-...-Nn2, wherein Nn2 point is the data point representing figure bosom to be measured information, and depth value, resistance value and sequence number one_to_one corresponding obtain the degree of depth by zero to a series of degree of depth-SRP resistance values of depth location to be measured; Rely on SRP data processing software, a series of degree of depth-SRP resistance value is processed, obtains the degree of depth of figure to be measured, resistivity carrier concentration characteristic.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106980046A (en) * | 2016-01-15 | 2017-07-25 | 无锡华润上华半导体有限公司 | A kind of method of testing of the resistivity of semi-conducting material |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06342010A (en) * | 1993-05-31 | 1994-12-13 | Sony Corp | Measuring method of electric characteristic |
| US6052653A (en) * | 1997-07-11 | 2000-04-18 | Solid State Measurements, Inc. | Spreading resistance profiling system |
| CN102213732A (en) * | 2010-03-31 | 2011-10-12 | 新科实业有限公司 | Method for measuring magnetic head resistance of different-type long bars by using public measuring appliance |
| CN103837808A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Doping failure analysis method |
| CN103837807A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Method for measuring carrier concentration distribution in deep trench |
| CN104070448A (en) * | 2013-03-28 | 2014-10-01 | 新科实业有限公司 | Fixture for grinding of elongated members, grinding device of elongated members, and grinding method of elongated members |
-
2014
- 2014-10-30 CN CN201410604621.0A patent/CN104377144B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06342010A (en) * | 1993-05-31 | 1994-12-13 | Sony Corp | Measuring method of electric characteristic |
| US6052653A (en) * | 1997-07-11 | 2000-04-18 | Solid State Measurements, Inc. | Spreading resistance profiling system |
| CN102213732A (en) * | 2010-03-31 | 2011-10-12 | 新科实业有限公司 | Method for measuring magnetic head resistance of different-type long bars by using public measuring appliance |
| CN103837808A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Doping failure analysis method |
| CN103837807A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Method for measuring carrier concentration distribution in deep trench |
| CN104070448A (en) * | 2013-03-28 | 2014-10-01 | 新科实业有限公司 | Fixture for grinding of elongated members, grinding device of elongated members, and grinding method of elongated members |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106980046A (en) * | 2016-01-15 | 2017-07-25 | 无锡华润上华半导体有限公司 | A kind of method of testing of the resistivity of semi-conducting material |
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