CN104218899A - Power detection circuit, radio frequency power amplification circuit with power detection circuit and electronic system - Google Patents
Power detection circuit, radio frequency power amplification circuit with power detection circuit and electronic system Download PDFInfo
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- CN104218899A CN104218899A CN201310213114.XA CN201310213114A CN104218899A CN 104218899 A CN104218899 A CN 104218899A CN 201310213114 A CN201310213114 A CN 201310213114A CN 104218899 A CN104218899 A CN 104218899A
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Abstract
The invention discloses a power detection circuit used for detecting the radio frequency output power of a radio frequency power amplification circuit and outputting the double-slope voltage according to the radio frequency output power to provide voltage slope curves for different master chips. The double-slope voltage comprises positive slope voltage and negative slope voltage. The power detection circuit comprises a first bias resistor, a first rectifier circuit and a second rectifier circuit. When a power signal to be detected is increased, the step voltage of the first bias resistor can be correspondingly increased, then, the first output voltage is reduced, and the second output voltage is increased, wherein the first output voltage is the negative slope voltage, and the second output voltage is the positive slope voltage.
Description
Technical field
The invention relates to a kind of power-sensing circuit, refer to a kind of power-sensing circuit that positive/negative slope voltage curve can be provided simultaneously especially.
Background technology
AMPS, PHS, NADC, GSM, DCS, PCS, IS-95, CDMA, WCDMA, DECT, WLAN (802.11), DECT, CT0, CT1 ... etc., be all the standard of Wi-Fi known by industry and personal communicator.Personal communicator (PCD) comprise mobile phone, radio telephone, personal digital assistant (personal digital assistant, PDA), portable radio telephone (walkie-talkie), intelligent mobile phone (smart phone) and other etc.All these devices are all radio communication device (or claiming radio communications set).Communication connection between PCD is set up by transmission and received RF (radio-frequency) signal.
In a wireless communication system, in order to power output (Output Power) size that the power amplifier (Power Amplifier) will followed the trail of under emission mode (Transmit Mode) is current, enable feedback (Feedback) detects to transceiver (Transceiver) system power, feeds back in transceiver system after now just needing a power-sensing circuit (Power Detector Circuit) to make the power signal produced by PA convert voltage level to by this closed-loop power testing circuit in power amplifier again.
Referring to Figure 1A and Figure 1B, Figure 1A is the existing power-sensing circuit that can produce the output of positive slope voltage.Figure 1B is the schematic diagram of the positive slope voltage curve of corresponding Figure 1A.Existing power-sensing circuit 100 comprises coupling capacitance CP ', the first diode D1, the second diode D2, electric capacity C and resistance R.Coupling capacitance CP ' is RF-coupled electric capacity, can allow outside the power signal RFD ' to be measured of radiofrequency signal passes through, and can isolated DC simultaneously.And transistor seconds provides bias voltage with after producing a forward bias voltage drop through system voltage VDD ', reoffers to the first diode D1 bias voltage, provides direct current (DC) bias loop to ground connection through resistance R.To be become after direct voltage DCOUT through rectification by the diode rectifier circuit power signal RFD ' to be measured that can come being coupled from coupling capacitance CP ' of the first diode D1, resistance R and electric capacity C composition and feed back to transceiver circuit.By arranging in pairs or groups to control (Closed-loop power control) as closed-loop power with firmware (Firmware).And from Figure 1B, the voltage curve after this diode power testing circuit rectification, different input power sizes can correspond to a magnitude of voltage.
In existing skill, the framework of above-mentioned diode-type power-sensing circuit simply and easily realize.But detect voltage system in the negative slope (Negative Slope) adopted in the face of some master chip (Main-chip) system dealer, this framework cannot be reached.
Summary of the invention
The object of the present invention is to provide a kind of power-sensing circuit, power-sensing circuit is for detecting the radio frequency power output of rf power amplifier circuit and exporting two slope voltage accordingly to provide the voltage slope curve demand of a master chip.Described power-sensing circuit comprises the first bias resistance, the first rectification circuit and the second rectification circuit.One end of first bias resistance is electrically connected system voltage.First rectification circuit is electrically connected the other end of the first bias resistance, described first rectification circuit also exports the first output voltage accordingly in order to rectification, wherein the first output voltage is the cross-pressure that system voltage deducts the first bias resistance, and the first output voltage is negative slope voltage.Second rectification circuit is electrically connected the first rectification circuit to receive the first electric current, described second rectification circuit is in order to receiving power signal to be measured and be that d. c. voltage signal is to export the second output voltage by power signal rectification to be measured, described second output voltage is proportional relation relative to the voltage level of power signal to be measured, when power signal to be measured increases, then can increase by the first electric current to increase the cross-pressure of the first bias resistance, by this to reduce the first output voltage, wherein the second output voltage is positive slope voltage.Power-sensing circuit is electrically connected to multiplexer, described multiplexer receive first and second output voltage and according to selection signal transmit first and second output voltage one of them to master chip, by this with the radio-frequency (RF) input power of dynamic conditioning rf power amplifier circuit, and then the radio frequency power output of rf power amplifier circuit is consistent.
In one of them embodiment of the present invention, wherein the first electric current is directly proportional relative to power signal to be measured, first output voltage is inversely proportional to relative to the first electric current, and the second output voltage is directly proportional relative to the first electric current, wherein power signal to be measured is the coupled signal of radio frequency power output, and two slope voltage comprises positive slope voltage and negative slope voltage.
In one of them embodiment of the present invention, the first rectification circuit comprises the first rectifying transistor, the first dead resistance and the first commutation capacitor.The collector of the first rectifying transistor connects the other end of the first bias resistance and exports the first output voltage, the base stage of the first rectifying transistor is connected to system voltage by the second bias resistance, and wherein first and second bias resistance is in order to bias voltage first rectifying transistor.One end of first dead resistance connects the other end of the first bias resistance, and the other end of the first dead resistance connects earthed voltage.One end of first commutation capacitor connects the other end of the first bias resistance, the other end of the first commutation capacitor connects earthed voltage, wherein when power signal to be measured increases, then the first electric current can rise accordingly with the second electric current flowing through the first bias resistance, to increase the cross-pressure of the first bias resistance, the collector volatge of the first rectifying transistor is made to decline by this.
In one of them embodiment of the present invention, the second rectification circuit comprises the second rectifying transistor, the second dead resistance and the second commutation capacitor.Collector and the base stage of the second rectifying transistor are interconnected to form equivalent diode and are connected the emitter-base bandgap grading of the first rectifying transistor, and the base stage of the second rectifying transistor is connected to power signal to be measured by coupling capacitance.One end of second dead resistance connects the emitter-base bandgap grading of the second rectifying transistor, and the other end of the second dead resistance connects earthed voltage.One end of second commutation capacitor connects the emitter-base bandgap grading of the second rectifying transistor, the other end of the second commutation capacitor connects earthed voltage, is wherein rectified into d. c. voltage signal by the second rectifying transistor, the second dead resistance with the power signal to be measured that coupling capacitance is coupled by the second commutation capacitor and emitter-base bandgap grading in the second rectifying transistor exports the second output voltage.When power signal to be measured increases, then the emitter voltage level of the second rectifying transistor can rise accordingly.
The embodiment of the present invention separately provides a kind of rf power amplifier circuit, and rf power amplifier circuit is electrically connected to a master chip and rf power amplifier circuit comprises power amplifier, power-sensing circuit and multiplexer.Power amplifier is amplified with received RF input signal by being electrically connected input matching circuit, and described power amplifier is by being electrically connected output matching circuit exporting radio frequency output signal.Power-sensing circuit is in order to the radio frequency power output of detection power amplifier, and described power-sensing circuit is electrically connected between power amplifier and output matching circuit with received power detection signal.Multiplexer is electrically connected between power-sensing circuit and master chip, multiplexer receive first and second output voltage and according to selection signal transmit first and second output voltage one of them to master chip, by this with the radio-frequency (RF) input power of dynamic conditioning rf power amplifier circuit, and then the radio frequency power output of rf power amplifier circuit is consistent.
The embodiment of the present invention reoffers a kind of electronic system, and described electronic system comprises rf power amplifier circuit and load.Rf power amplifier circuit is in order to received RF input signal and amplified, and exports radio frequency output signal accordingly.Load is electrically connected rf power amplifier circuit.
In sum, the power-sensing circuit that the embodiment of the present invention proposes and the rf power amplifier circuit, the electronic system that use it, the power-sensing circuit simultaneously with positive/negative slope voltage curve is directly incorporated in master chip, to provide the voltage slope curve requirement of different master chip, more can reduce extra external circuit, and then reduce peripheral circuit cost.
Further understand feature of the present invention and technology contents for enable, refer to following detailed description for the present invention and accompanying drawing, but these illustrate and institute's accompanying drawings is only used for the present invention is described, but not any restriction is done to right of the present invention.
Accompanying drawing explanation
Figure 1A is the existing power-sensing circuit that can produce the output of positive slope voltage.
Figure 1B is the schematic diagram of the positive slope voltage curve of corresponding Figure 1A.
Fig. 2 is the block schematic diagram of the rf power amplifier circuit according to the embodiment of the present invention.
Fig. 3 is the block schematic diagram of the power-sensing circuit according to the embodiment of the present invention.
Fig. 4 is the physical circuit figure of power-sensing circuit according to yet another embodiment of the invention.
Fig. 5 is the schematic diagram of the positive slope voltage curve according to the embodiment of the present invention.
Fig. 6 is the schematic diagram of the negative slope voltage curve according to the embodiment of the present invention.
Fig. 7 is the block schematic diagram of the electronic system according to the embodiment of the present invention.
Wherein, description of reference numerals is as follows:
100: existing power-sensing circuit
200,300: rf power amplifier circuit
700: electronic system
210: power amplifier
220: input matching circuit
230: output matching circuit
240: power-sensing circuit
242: the first rectification circuits
244: the second rectification circuits
250: multiplexer
260: master chip
710: rf power amplifier circuit
720: load
CP ', CP: coupling capacitance
C: electric capacity
C1: the first commutation capacitor
C2: the second commutation capacitor
D1: the first diode
D2: the second diode
DCOUT: direct voltage
GND: earthed voltage
Q1: the first rectifying transistor
Q2: the second rectifying transistor
I1: the first electric current
I2: the second electric current
R: resistance
R1: the first dead resistance
R2: the second dead resistance
RB1: the first bias resistance
RB2: the second bias resistance
RFD ', RFD: power signal to be measured
RFIN: radio-frequency input signals
RFOUT: radio frequency output signal
SEL: select signal
VDD ', VDD: system voltage
VRB1: cross-pressure
VOUT1: the first output voltage
VOUT2: the second output voltage
Embodiment
Hereafter various exemplary embodiments will be described more fully referring to alterations, in alterations, show some exemplary embodiments.But concept of the present invention may embody in many different forms, and should not be construed as and be limited to set forth exemplary embodiments herein.Specifically, these exemplary embodiments are provided to make the present invention for detailed and complete, and will will fully pass on the category of concept of the present invention to those who familiarize themselves with the technology.All graphic in, can in order to clear and lavish praise on oneself size and the relative size in Ceng Ji district.Similar numeral indicates like all the time.
Although should be understood that and term first, second, third, etc. may be used herein to describe various element, these elements should not limit by these terms.These terms are distinguish an element and another element.Therefore, the first element hereafter discussed can be described as the second element and does not depart from the teaching of concept of the present invention.As used herein, term " and/or " comprise all combinations listing any one and one or many person in project be associated.
In a wireless communication system, in order to want to follow the trail of the current power output size of rf power amplifier circuit under emission mode, and the detection of transceiver (Transceiver) system power can be fed back to, then rf power amplifier circuit then needs a power-sensing circuit.In practice application, some master chip system dealer can adopt the power-sensing circuit of positive slope voltage curve to detect current power output, but another part master chip system dealer can adopt the power-sensing circuit of negative slope voltage curve to detect current power output, the system dealer of the power-sensing circuit of positive slope voltage curve is therefore adopted to need to increase extra circuit area again and become the original power-sensing circuit with negative slope voltage curve that produces just can reach.In order to the demand in response to current system dealer, this disclosure provides one can be directly incorporated in master chip (chip of rf power amplifier circuit) and can provide the power-sensing circuit of positive/negative slope voltage curve simultaneously, with the voltage slope curve demand in response to different master chips.Below will to further illustrate in multiple embodiment at least one embodiment to understand this disclosure.
(embodiment of power-sensing circuit)
Please refer to Fig. 2, Fig. 2 is the block schematic diagram of the rf power amplifier circuit according to the embodiment of the present invention.As shown in Figure 2, rf power amplifier circuit 200 comprises power amplifier 210, input matching circuit 220, output matching circuit 230, power-sensing circuit 240 and multiplexer 250.Power amplifier 210 is electrically connected between input matching circuit 220 and output matching circuit 230.Power-sensing circuit 240 is electrically connected the output of power amplifier 210.Multiplexer 250 is electrically connected between power-sensing circuit 240 and master chip 260.
In communication system now, when transceiver in the transmission mode, power amplifier 210 can receive by an input matching circuit 220 radio-frequency input signals RFIN that master chip 260 transmits and be amplified, and transmits radio frequency output signal RFOUT to antenna (not illustrating) to carry out radio communication afterwards by an output matching circuit 230.Now, power-sensing circuit 240 can the current power output of detection power amplifier 210 using as power signal RFD to be measured (that is power signal RFD to be measured is the coupled signal of radio frequency power output RFOUT), and power signal RFD to be measured being given rectification is after d. c. voltage signal, export the first output voltage VO UT1 and the second output voltage VO UT2 accordingly to multiplexer 250 simultaneously, wherein the first output voltage VO UT1 is negative slope voltage, and the second output voltage VO UT2 is positive slope voltage.Afterwards, multiplexer 250 receives the first output voltage VO UT1 and the second output voltage VO UT2 and transmits first and second output voltage VO UT1, VOUT2 according to selection signal SEL one of them controls (Closed-loop power control) to master chip to reach closed-loop power, wherein selects signal SEL can to meet the demand of the voltage slope curve of master chip 260 own with the output voltage allowing multiplexer 250 send out for being initiatively sent to multiplexer 250 by master chip 260.Accordingly, with the radio-frequency (RF) input power of dynamic conditioning rf power amplifier circuit 200, and then the radio frequency power output of rf power amplifier circuit 200 is consistent.
In order to illustrate in greater detail the operation workflow of power-sensing circuit 240 of the present invention, one of be at least further described in multiple embodiment below.
In ensuing multiple embodiment, the part being different from above-mentioned Fig. 2 embodiment will be described, and all the other clippeds are identical with the part of above-mentioned Fig. 2 embodiment.In addition, for illustrating for the purpose of facility, similar reference number or label indicate similar element.
(another embodiment of power-sensing circuit)
Please refer to Fig. 3, Fig. 3 is the block schematic diagram of the power-sensing circuit according to the embodiment of the present invention.The power-sensing circuit 240 of this disclosure is for detecting the radio frequency power output (also by the coupled signal of the current power output of power amplifier 210 as power signal RFD to be measured) of rf power amplifier circuit 300, and export two slope voltage accordingly to provide the voltage slope curve demand of different system master chip, wherein the signal of two slope voltage comprises positive slope voltage and this negative slope voltage.As shown in Figure 3, power-sensing circuit 240 comprises the first bias resistance RB1, the first rectification circuit 242 and the second rectification circuit 244.One end of first bias resistance RB1 is electrically connected a system voltage VDD, and the first rectification circuit 242 is electrically connected the other end and the multiplexer 250 of the first bias resistance RB1.Second rectification circuit 244 is electrically connected the first rectification circuit 242, the output of power amplifier 210 and multiplexer 250.
First rectification circuit 242 is in order to rectification and export the first output voltage VO UT1 accordingly to multiplexer 250 and export the first electric current I 1 to the second rectification circuit 244, wherein the first output voltage VO UT1 is the cross-pressure VRB1 that system voltage VDD deducts the first bias resistance RB1, and the first output voltage VO UT1 is a negative slope voltage.Furthermore, when power signal RFD to be measured increases and rises, then the first electric current I 1 also can rise with the electric current flowing through the first bias resistance RB1.Therefore, according to Ohm's law, the cross-pressure of the first bias resistance RB1 then can increase to make the first output voltage VO UT1 present the characteristic of negative slope voltage curve.
Second rectification circuit 244 is in order to receiving power signal RFD to be measured and be that d. c. voltage signal is to export the second output voltage VO UT2 by power signal RFD to be measured rectification, second output voltage VO UT2 is proportional relation relative to the voltage level of power signal RFD to be measured, when the power output that power amplifier 210 is current rises, that is when power signal RFD to be measured increases, then the second output voltage VO UT2 also can rise thereupon, and wherein the second output voltage VO UT2 has the characteristic of a positive slope voltage curve.In simple terms, first electric current I 1 is directly proportional relative to power signal RFD to be measured, described first output voltage VO UT1 is inversely proportional to relative to the first electric current I 1, and described second output voltage VO UT2 is directly proportional relative to the first electric current I 1, wherein power signal RFD to be measured is the signal that radio frequency power output RFOUT processes without output matching circuit 230, that is power signal RFD to be measured is the coupled signal of radio frequency power output RFOUT.
Next wanting teaching, is the operation principle further illustrating power-sensing circuit 240.
Similarly, transceiver in the transmission mode, power amplifier 210 in rf power amplifier circuit 300 receives by an input matching circuit 220 radio-frequency input signals RFIN that master chip 260 transmits and is amplified, and exports radio frequency output signal RFOUT to carry out radio communication afterwards by an output matching circuit 230.Now, the power output that this disclosure utilizes the instant detection power amplifier 210 of power-sensing circuit 240 current, furthermore, second rectification circuit 244 can the current power output of received power amplifier 210 using as power signal RFD to be measured, when the voltage level of power signal RFD to be measured rises, then the second rectification circuit 244 not only can be treated power scale signal RFD and give the voltage that rectification is DC form, and can export accordingly there is positive slope voltage curve the second output voltage VO UT2 to multiplexer 250.Now, that is when the voltage level of power signal RFD to be measured rises, the first electric current I 1 also can increase to make the cross-pressure VRB1 of the first bias resistance RB1 increase with the electric current flowing through the first bias resistance RB1 accordingly.Due to, the voltage level of the first output voltage VO UT1 is the cross-pressure VRB1 that system voltage VDD deducts the first bias resistance RB1, so the first output voltage VO UT1 can increase along with the cross-pressure of the first voltage resistance RB1 and decline accordingly, therefore the first output voltage VO UT1 has the characteristic of negative slope voltage curve.Next, multiplexer 250 can receive the first output voltage VO UT1 with negative slope voltage curve and the second output voltage VO UT2 with positive slope voltage curve simultaneously, and according to master chip 260 align/demand of negative slope voltage curve export the first output voltage VO UT1 and the second output voltage VO UT2 one of them to master chip 260 with the current power output of dynamic conditioning power amplifier 210, accordingly to meet the demand of Nowadays communication system.
For example, when the master chip 260 that system dealer provides is for having the demand of negative slope voltage curve, then master chip 260 can transmit a selection signal SEL (as digital logical zero) to multiplexer 250, has the first output voltage VO UT1 of negative slope voltage curve to master chip 260 to make multiplexer 250 transmission.Afterwards, master chip 260 can adjust radio-frequency input signals RFIN according to built-in look-up table (look up table), that is produces corresponding radio-frequency input signals RFIN to rf power amplifier circuit 300.On the other hand, when the master chip 260 that system dealer provides is for having the demand of positive slope voltage curve, then master chip 260 can transmit a selection signal SEL (as digital logical one) to multiplexer 250, has the second output voltage VO UT2 of positive slope voltage curve to master chip 260 to make multiplexer 250 transmission.Afterwards, master chip 260 can adjust radio-frequency input signals RFIN according to built-in look-up table (look up table), that is produces corresponding radio-frequency input signals RFIN to rf power amplifier circuit 300.
In order to illustrate in greater detail the operation workflow of power-sensing circuit 240 of the present invention, one of be at least further described in multiple embodiment below.
In ensuing multiple embodiment, the part being different from above-mentioned Fig. 3 embodiment will be described, and all the other clippeds are identical with the part of above-mentioned Fig. 3 embodiment.In addition, for illustrating for the purpose of facility, similar reference number or label indicate similar element.
(embodiment again of power-sensing circuit)
Please refer to Fig. 4, Fig. 4 is the physical circuit figure of power-sensing circuit 240 according to yet another embodiment of the invention.With above-mentioned Fig. 3 embodiment unlike, comprise the first rectifying transistor Q1, the first dead resistance R1 and the first commutation capacitor C1 at the first rectification circuit 242 of the power-sensing circuit 240 of the present embodiment.Second rectification circuit 244 comprises the second rectifying transistor Q2, the second dead resistance R2 and the second commutation capacitor C2.The collector of the first rectifying transistor Q1 connects the other end of the first bias resistance RB1 and exports the first output voltage VO UT1, the base stage of the first rectifying transistor Q1 is connected to system voltage VDD by the second bias resistance RB2, and wherein first and second bias resistance RB1, RB2 is in order to bias voltage first rectifying transistor Q1.One end of first dead resistance R1 connects the other end of the first bias resistance RB1, and the other end of the first dead resistance R1 connects earthed voltage GND.One end of first commutation capacitor C1 connects the other end of the first bias resistance RB1, and the other end of the first commutation capacitor C1 connects earthed voltage GND.The collector of the second rectifying transistor Q2 is interconnected to form equivalent diode with base stage and is connected the emitter-base bandgap grading of the first rectifying transistor Q1, and the base stage of the second rectifying transistor Q2 is connected to power signal RFD to be measured by coupling capacitance CP.One end of second dead resistance R2 connects the emitter-base bandgap grading of the second rectifying transistor Q2, and the other end of the second dead resistance R2 connects earthed voltage GND.One end of second commutation capacitor C2 connects the emitter-base bandgap grading of the second rectifying transistor Q2, and the other end of the second commutation capacitor C2 connects earthed voltage GND.
Next wanting teaching, is the operation principle further illustrating power-sensing circuit 240.When power-sensing circuit 240 receives power signal RFD to be measured by the base stage of the second rectifying transistor Q2, then the second rectifying transistor Q2, the second dead resistance give rectification with the power signal RFD to be measured that coupling capacitance CP can be coupled by the second commutation capacitor C2 is direct voltage form, and can export the second output voltage VO UT2 at the emitter-base bandgap grading of the second rectifying transistor Q.Simultaneously, first electric current I 1 can flow to the collector of transistor seconds Q2 from the emitter-base bandgap grading of the first rectifying transistor Q1, and the first rectifying transistor Q1 can be biased in active area by the first bias resistance RB1 and the second bias resistance RB2, and the first bias resistance RB1 has the second electric current I 2 and flows through, and produces a cross-pressure VRB1 at its two ends.Therefore, as shown in Figure 4, the first output voltage VO UT1 exported in the collector of the first rectifying transistor Q1 is the cross-pressure VRB1 that system voltage VDD deducts the first bias resistance RB1.
When the voltage level of power signal RFD to be measured rises or increases, then the emitter current of transistor seconds Q2 also can rise accordingly, and the portion of electrical current of the emitter current of transistor seconds Q2 can charge with storage power to the second commutation capacitor C2, therefore according to the voltage-current relationship of general electric capacity, the capacitance voltage (i.e. the second output voltage VO UT2) on the second commutation capacitor C2 can present the trend that exponential type rises.At this, referring to Fig. 4 and Fig. 5, Fig. 5 is the schematic diagram of the positive slope voltage curve according to the embodiment of the present invention.In Figure 5, transverse axis is power signal to be measured (unit is dBm), and the longitudinal axis is the second output voltage (unit is volt).As shown in Figure 5, the voltage of different power signal RFD to be measured corresponds to the second different output voltage VO UT2, and presents the trend of exponential type rising, and therefore the second output voltage VO UT2 is positive slope voltage curve.Simultaneously, when the voltage level of power signal RFD to be measured rises or increases, then the first electric current I 1 also can synchronously rise on the ground with the second electric current I 2 flowing through the first bias resistance RB1, and then make the cross-pressure VRB1 of the first bias resistance RB1 increase, make the collector volatge of the first rectifying transistor Q1 decline by this.Specifically, because the first output voltage VO UT1 is the cross-pressure that system voltage VDD deducts the first bias resistance RB1, so when the cross-pressure VRB1 of the first bias resistance RB1 rises, then the first output voltage VO UT1 can decline accordingly.Furthermore, the first commutation capacitor C1 can discharge to the collector terminal of the first rectifying transistor Q1.Referring to Fig. 4 and Fig. 6, Fig. 6 is the schematic diagram of the negative slope voltage curve according to the embodiment of the present invention.In figure 6, transverse axis is power signal to be measured (unit is dBm), and the longitudinal axis is the first output voltage (unit is volt).As shown in Figure 6, the voltage of different power signal RFD to be measured corresponds to the first different output voltage VO UT1, and presents exponential type downward trend, and therefore the first output voltage VO UT1 is negative slope voltage curve.Next, multiplexer 250 (corresponding to Fig. 3) can receive the first output voltage VO UT1 with negative slope voltage curve and the second output voltage VO UT2 with positive slope voltage curve simultaneously, and according to master chip 260 align/demand of negative slope voltage curve exports a control voltage to power amplifier with the current power output of dynamic conditioning power amplifier 210, accordingly to meet the demand of Nowadays communication system radio frequency power amplification circuit.
(embodiment of electronic system)
Please refer to Fig. 7, Fig. 7 is the block schematic diagram of the electronic system according to the embodiment of the present invention.Electronic system 700 comprises rf power amplifier circuit 710 and the load 720 being connected to rf power amplifier circuit.Rf power amplifier circuit 710 can be one of them of rf power amplifier circuit 200 and 300 in above-described embodiment, and in order to received radio-frequency input signals RFIN is amplified rear transmission radio frequency output signal RFOUT to load 720.
(possible effect of embodiment)
In sum, the power-sensing circuit that the embodiment of the present invention proposes and the rf power amplifier circuit, the electronic system that use it, the power-sensing circuit simultaneously with positive/negative slope voltage curve is directly incorporated in master chip, to provide the voltage slope curve requirement of different master chip, more can reduce extra external circuit, and then reduce peripheral circuit cost.
The foregoing is only embodiments of the invention, it is also not used to limit to Patent right requirement scope of the present invention.
Claims (10)
1. a power-sensing circuit, is characterized in that, for detecting a radio frequency power output of a rf power amplifier circuit and exporting a pair of slope voltage accordingly to provide the voltage slope curve demand of a master chip, this power-sensing circuit comprises:
One first bias resistance, its one end is electrically connected a system voltage;
One first rectification circuit, be electrically connected the other end of this first bias resistance, this first rectification circuit also exports one first output voltage accordingly in order to rectification, wherein this first output voltage is the cross-pressure that this system voltage deducts this first bias resistance, and this first output voltage is a negative slope voltage; And
One second rectification circuit, be electrically connected this first rectification circuit to receive one first electric current, this second rectification circuit is in order to receiving a power signal to be measured and be that d. c. voltage signal is to export one second output voltage by this power signal rectification to be measured, this second output voltage is proportional relation relative to the voltage level of this power signal to be measured, when this power signal to be measured increases, then can increase this first electric current to increase the cross-pressure of this first bias resistance, by this to reduce this first output voltage, wherein this second output voltage is a positive slope voltage
Wherein this power-sensing circuit is electrically connected to a multiplexer, this multiplexer receive this first and this second output voltage and according to one select signal transmit this first and this second output voltage one of them to this master chip, by this with this radio-frequency (RF) input power of this rf power amplifier circuit of dynamic conditioning, and then this radio frequency power output of this rf power amplifier circuit is consistent.
2. power-sensing circuit as claimed in claim 1, it is characterized in that, this first electric current is directly proportional relative to this power signal to be measured, this first output voltage is inversely proportional to relative to this first electric current, and this second output voltage is directly proportional relative to this first electric current, wherein this power signal to be measured is the coupled signal of this radio frequency power output, and this pair of slope voltage comprises this positive slope voltage and this negative slope voltage.
3. power-sensing circuit as claimed in claim 1, it is characterized in that, this first rectification circuit comprises:
One first rectifying transistor, its collector connects the other end of this first bias resistance and exports this first output voltage, its base stage is connected to this system voltage by one second bias resistance, wherein this first and this second bias resistance in order to this first rectifying transistor of bias voltage;
One first dead resistance, its one end connects the other end of this first bias resistance, and its other end connects an earthed voltage; And
One first commutation capacitor, its one end connects the other end of this first bias resistance, its other end connects this earthed voltage, wherein when this power signal to be measured increases, then this first electric current can rise accordingly with one second electric current flowing through this first bias resistance, to increase the cross-pressure of this first bias resistance, the collector volatge of this first rectifying transistor is made to decline by this.
4. power-sensing circuit as claimed in claim 3, it is characterized in that, this second rectification circuit comprises:
One second rectifying transistor, its collector and base stage are interconnected to form an equivalent diode and the emitter-base bandgap grading being connected this first rectifying transistor, and its base stage is connected to this power signal to be measured by a coupling capacitance;
One second dead resistance, its one end connects the emitter-base bandgap grading of this second rectifying transistor, and its other end connects this earthed voltage; And
One second commutation capacitor, its one end connects the emitter-base bandgap grading of this second rectifying transistor, its other end connects this earthed voltage, wherein be rectified into d. c. voltage signal by this second rectifying transistor, this second dead resistance with this power signal to be measured that this coupling capacitance is coupled by this second commutation capacitor and emitter-base bandgap grading in this second rectifying transistor exports this second output voltage
Wherein when this power signal to be measured increases, then the emitter voltage level of this second rectifying transistor can rise accordingly.
5. a rf power amplifier circuit, is characterized in that, is electrically connected a master chip, and this rf power amplifier circuit comprises:
One power amplifier, by being electrically connected an input matching circuit to receive a radio-frequency input signals and to be amplified, this power amplifier by electric connection one output matching circuit to export a radio frequency output signal;
One power-sensing circuit, in order to detect this radio frequency power output of this power amplifier, this power-sensing circuit is electrically connected to receive a power signal to be measured between this power amplifier and this output matching circuit, and this power-sensing circuit comprises:
One first bias resistance, its one end is electrically connected a system voltage;
One first rectification circuit, be electrically connected the other end of this first bias resistance, this first rectification circuit also exports one first output voltage accordingly in order to rectification, wherein this first output voltage is the cross-pressure that this system voltage deducts this first bias resistance, and this first output voltage is a negative slope voltage; And
One second rectification circuit, be electrically connected this first rectification circuit to receive one first electric current, this second rectification circuit is in order to receiving a power signal to be measured and be that d. c. voltage signal is to export one second output voltage by this power signal rectification to be measured, this second output voltage is proportional relation relative to the voltage level of this power signal to be measured, when this power signal to be measured increases, then can increase this first electric current to increase the cross-pressure of this first bias resistance, by this to reduce this first output voltage, wherein this second output voltage is a positive slope voltage
One multiplexer, be electrically connected between this power-sensing circuit and this master chip, this multiplexer receive this first and this second output voltage and according to one select signal transmit this first with this second output voltage one of them to this master chip, by this with this radio-frequency (RF) input power of this rf power amplifier circuit of dynamic conditioning, and then this radio frequency power output of this rf power amplifier circuit is consistent.
6. rf power amplifier circuit as claimed in claim 5, it is characterized in that, this first electric current is directly proportional relative to this power signal to be measured, this first output voltage is inversely proportional to relative to this first electric current, and this second output voltage is directly proportional relative to this first electric current, wherein this power signal to be measured is the coupled signal of this radio frequency power output.
7. rf power amplifier circuit as claimed in claim 5, it is characterized in that, this first rectification circuit comprises:
One first rectifying transistor, its collector connects the other end of this first bias resistance and exports this first output voltage, its base stage is connected to this system voltage by one second bias resistance, wherein this first and this second bias resistance be biased into this first rectifying transistor in order to provide;
One first dead resistance, its one end connects the other end of this first bias resistance, and its other end connects an earthed voltage; And
One first commutation capacitor, its one end connects the other end of this first bias resistance, its other end connects this earthed voltage, wherein when this power signal to be measured increases, then this first electric current can rise accordingly with one second electric current flowing through this first bias resistance, to increase the cross-pressure of the first bias resistance, the collector volatge of this first rectifying transistor is made to decline by this.
8. rf power amplifier circuit as claimed in claim 7, it is characterized in that, this second rectification circuit comprises:
One second rectifying transistor, its collector and base stage are interconnected to form an equivalent diode and the emitter-base bandgap grading being connected this first rectifying transistor, and its base stage is connected to this power signal to be measured by a coupling capacitance;
One second dead resistance, its one end connects the emitter-base bandgap grading of this second rectifying transistor, and its other end connects this earthed voltage; And
One second commutation capacitor, its one end connects the emitter-base bandgap grading of this second rectifying transistor, its other end connects this earthed voltage, wherein be rectified into d. c. voltage signal by this second rectifying transistor, this second dead resistance with this power signal to be measured that this coupling capacitance is coupled by this second commutation capacitor and emitter-base bandgap grading in this second rectifying transistor exports this second output voltage
Wherein when this power signal to be measured increases, then the emitter voltage level of this second rectifying transistor can rise accordingly.
9. an electronic system, is characterized in that, comprising:
One rf power amplifier circuit as claimed in claim 5, in order to receive a radio-frequency input signals and to be amplified, and exports a radio frequency output signal accordingly; And
One load, is electrically connected this rf power amplifier circuit.
10. electronic system as claimed in claim 9, it is characterized in that, this first electric current is directly proportional relative to this power signal to be measured, this first output voltage is inversely proportional to relative to this first electric current, and this second output voltage is directly proportional relative to this first electric current, wherein this power signal to be measured is the coupled signal of this radio frequency power output.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310213114.XA CN104218899B (en) | 2013-05-31 | 2013-05-31 | Power-sensing circuit and the rf power amplifier circuit using it and electronic system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310213114.XA CN104218899B (en) | 2013-05-31 | 2013-05-31 | Power-sensing circuit and the rf power amplifier circuit using it and electronic system |
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| Publication Number | Publication Date |
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| CN104218899A true CN104218899A (en) | 2014-12-17 |
| CN104218899B CN104218899B (en) | 2017-03-01 |
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Cited By (1)
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| CN107404358A (en) * | 2017-07-27 | 2017-11-28 | 东莞市金铭电子有限公司 | A kind of radio frequency path detection method, terminal and computer-readable recording medium |
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| US7454179B1 (en) * | 2005-11-15 | 2008-11-18 | Rf Micro Devices, Inc. | Radio frequency power detector and decision circuit used with DC supply voltage controlled power amplifiers |
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| US20030102911A1 (en) * | 2001-11-30 | 2003-06-05 | Gopal Raghavan | Bipolar transistor-based linearizer with programmable gain and phase response system |
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| CN1655446A (en) * | 2004-02-12 | 2005-08-17 | 株式会社瑞萨科技 | High frequency power amplifier circuit and radio communication system |
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| CN104218899B (en) | 2017-03-01 |
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