CN104183896A - Four-port device testing structure applicable to terahertz frequency band - Google Patents

Four-port device testing structure applicable to terahertz frequency band Download PDF

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CN104183896A
CN104183896A CN201410392045.8A CN201410392045A CN104183896A CN 104183896 A CN104183896 A CN 104183896A CN 201410392045 A CN201410392045 A CN 201410392045A CN 104183896 A CN104183896 A CN 104183896A
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waveguide
cavity
wave guide
branch
chamber
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CN104183896B (en
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胡江
周扬帆
刘双
刘伊民
张勇
郑中万
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University of Electronic Science and Technology of China
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Abstract

The invention discloses a four-port device testing structure applicable to a terahertz frequency band, which comprises a terahertz branch waveguide power divider, wherein a waveguide cavity of the terahertz branch waveguide power divider comprises a main waveguide cavity and an auxiliary waveguide cavity, the main waveguide cavity and the auxiliary waveguide cavity are mutually parallel and of a cuboid structure, N branch waveguide cavities with a cuboid structure are arranged between the main waveguide cavity and the auxiliary waveguide cavity, and the waveguide cavity specifically comprises waveguide cavities with three test structures, that is, waveguide cavities with a straight coupling test structure, waveguide cavities with a parallel coupling test structure and waveguide cavities with an isolation test structure. The four-port device testing structure disclosed by the invention has the beneficial effects that the length of a straight waveguide of each test port is obviously reduced, and the device tends to be miniaturized, thereby effectively solving a problem of great loss caused by over-length of the straight waveguide, and having the characteristics of low insertion loss, high power capacity and the like. More importantly, the four-port device testing structure is convenient for testing the performance of devices.

Description

Be applicable to four port devices test structures of Terahertz frequency range
Technical field
The invention belongs to Terahertz frequency range device detection technical field, relate in particular to a kind of four port devices test structures that are applicable to Terahertz frequency range.
Background technology
THz wave frequency range is in 300GHz-3000GHz scope, in electromagnetic spectrum between microwave and infrared band.Terahertz science is an interdisciplinary science between electronics and optics, the main electronics science and technology that relies on of long wave direction research, and the research of shortwave direction is mainly photonic propulsion science and technology.Due to its residing specific position, THz wave can show many unique properties that are different from other kind electromagnetic radiation, and these characteristics have determined that THz wave has extensively good application prospect in a lot of fields.The power output of Terahertz system has directly determined operating radius, antijamming capability and the communication quality of system.In order to improve the power output of Terahertz system, the method conventionally adopting is power synthetic technique.This technology is that the power of individual devices output is concentrated to output by power division/comprise network, thereby has increased the power output of system, and power synthetic technique is the conventional and effective method that improves at present Terahertz system power output.Meanwhile, power divider can provide for system the multichannel output of same signal source, meets the user demand of system.Up to the present, divide/synthesizer of merit structure type is numerous, and wherein each port match, isolation are high, insertion loss small-power capacity advantages of higher is widely used because having for the multiple-limb rectangular waveguide bridge structure of four ports.In microwave and millimeter wave frequency range, the normal vector network analyzer that adopts dual-port is tested four port power divider, when test, need to use with the matched load of standard flange and be connected with non-test port to ensure normally carrying out of test, this means that the each port straight wave guide of device part needs proper extension to have enough large size that a kind of power divider test structure can be tested all properties to ensure device.At terahertz wave band, because the size of device constantly reduces along with the rising of frequency, and skin effect and relevant loss cause device to have very harsh requirement to inner roughness, applies traditional Machining Technology and make, be difficult to reach requirement on machining accuracy, even cannot process.And deep reaction ion etching (DRIE) technology in existing Micrometer-Nanometer Processing Technology can be competent at for the processing of terahertz waveguide transmission apparatus, machining accuracy is in micron dimension.DRIE technology is a kind of each diversity high aspect ratio technology, belongs to dry etching, is also advanced etch techniques, generally all based on inductively coupled plasma, silicon is carried out to Deep processing pedagogy.Compare with the micro-processing of body of other silicon, DRIE technology does not rely on substrate crystal orientation, has larger processing free space.Typical etch mask is silicon dioxide or photoresist, and etching selection ratio is relevant with specific technological parameter.Adopt DRIE technology can process the silicon structure of high-aspect-ratio, these silicon structures are as the mould that produces metal structure, or depositing metal films is directly used as device on silicon structure.In 325GHz-500GHz band limits, use the loss of the straight wave guide of DRIE technology processing and manufacturing to be approximately 0.4dB/mm, this means that waveguide loss can not ignore, test component port extension straight wave guide length is more short better.In Terahertz frequency range, because measured device size is far smaller than the size of test macro standard flange, cause using the method for testing of four conventional port devices of microwave and millimeter wave frequency range to be tested, non-test port cannot adopt the mode of termination matched load to test all properties of measured device.In addition,, because the distance between the tested port of device plays the screw of connection function with respect to test macro and the length of pin is shorter, while causing testing, normal connection there will be the phenomenon contradicting each other.The test for us is brought difficulty by these, even cannot test device.
Summary of the invention
In order to address the above problem, the present invention proposes a set of four port devices test structures that are applicable to Terahertz frequency range.
Technical scheme of the present invention is: the four port devices test structures that are applicable to Terahertz frequency range, comprise Terahertz branch-waveguide power splitter, the waveguide cavity of described Terahertz branch-waveguide power splitter comprises main waveguide cavity and complementary wave guide cavity, described main waveguide cavity and complementary wave guide cavity are parallel to each other and are all rectangular structure, also have N the branch-waveguide chamber that is rectangular structure between described main waveguide cavity and complementary wave guide cavity; Described main waveguide cavity one end is waveguide input section, the other end is the straight-through deferent segment of waveguide, described complementary wave guide cavity one end is waveguide distance piece, the other end is waveguide-coupled deferent segment, waveguide input section and the waveguide distance piece of complementary wave guide cavity of described main waveguide cavity is positioned at the same side in N branch-waveguide chamber, and the straight-through deferent segment of waveguide of main waveguide cavity and the waveguide-coupled deferent segment of complementary wave guide cavity are positioned at the opposite side in N branch-waveguide chamber; Described waveguide cavity specifically comprises straight coupling measurement structured waveguide chamber, parallel coupling test structure waveguide cavity and three kinds, isolation degree test structured waveguide chamber test structure waveguide cavity; Described waveguide cavity adopts the structure that perpendicular corners is set at particular port, and test port is positioned at same level alignment line, and non-test port turns to side fills in absorbing material, and described absorbing material adopts Wedge structure, and tip inserts in non-test lead waveguide mouth.
Further, the complementary wave guide cavity two ends in above-mentioned straight coupling measurement structured waveguide chamber have respectively perpendicular corners and edge main waveguide cavity one side extension dorsad; The first one end, branch-waveguide chamber is connected with the waveguide input section of main waveguide cavity, the other end is connected with the waveguide distance piece of complementary wave guide cavity perpendicular corners, one end, N branch-waveguide chamber is connected with the straight-through deferent segment of waveguide of main waveguide cavity, and the other end is connected with the waveguide-coupled deferent segment of complementary wave guide cavity perpendicular corners.
Further, the straight-through deferent segment of the waveguide of the main waveguide cavity of above-mentioned parallel coupling test structure waveguide cavity has perpendicular corners and edge complementary wave guide cavity one side extension dorsad; The waveguide distance piece of described complementary wave guide cavity have perpendicular corners and dorsad main waveguide cavity one side extend, described waveguide-coupled deferent segment through twice perpendicular corners and along and a waveguide input section same level alignment line direction extend; The first one end, branch-waveguide chamber is connected with the waveguide input section of main waveguide cavity, the other end is connected with the waveguide distance piece of complementary wave guide cavity perpendicular corners, one end, N branch-waveguide chamber is connected with the straight-through deferent segment of waveguide of main waveguide cavity perpendicular corners, and the other end is connected with the waveguide-coupled deferent segment of complementary wave guide cavity perpendicular corners.
Further, the main waveguide cavity two ends in above-mentioned isolation degree test structured waveguide chamber have respectively perpendicular corners and edge complementary wave guide cavity one side extension dorsad; Described complementary wave guide cavity two ends have respectively perpendicular corners and edge main waveguide cavity one side extension dorsad; The straight-through deferent segment of described waveguide and waveguide-coupled deferent segment are positioned at same level alignment line, and described waveguide input section is positioned at same level alignment line with waveguide distance piece; The first one end, branch-waveguide chamber is connected with the waveguide input section of main waveguide cavity perpendicular corners, the other end is connected with the waveguide distance piece of complementary wave guide cavity perpendicular corners, one end, N branch-waveguide chamber is connected with the straight-through deferent segment of waveguide of main waveguide cavity perpendicular corners, and the other end is connected with the waveguide-coupled deferent segment of complementary wave guide cavity perpendicular corners.
The invention has the beneficial effects as follows: the present invention adopts the mode of multi-form perpendicular corners to process existing power splitter branch bridge structure and forms three kinds of test structures, jointly complete the performance test to power divider, in test structure, two ports of test are placed on a horizontal alignment line, non-test port is filled in absorbing material and is reduced the impact on two test port performances.A set of test structure of this conceptual design can make each test port straight wave guide length significantly shorten than existing structure, device is tending towards miniaturization, efficiently solve straight wave guide long and bring the problem of huge loss, there is filter with low insertion loss, the features such as power capacity is large, what is more important is easy to device performance to test.
Brief description of the drawings
Fig. 1 is terahertz waveguide power splitter internal structure vertical view of the present invention.
Fig. 2 is the straight coupling measurement structural upright of terahertz waveguide power splitter of the present invention structural representation.
Fig. 3 is the straight coupling measurement structure of terahertz waveguide power splitter of the present invention upper cavity structure vertical view.
Fig. 4 is the straight coupling measurement structure of terahertz waveguide power splitter of the present invention lower chamber structure vertical view.
Fig. 5 is the test curve of the straight coupling measurement structure of terahertz waveguide power splitter of the present invention under 325~440GHz frequency range.
Fig. 6 is terahertz waveguide power splitter parallel coupling test structure perspective view of the present invention.
Fig. 7 is terahertz waveguide power splitter parallel coupling test structure upper cavity structure vertical view of the present invention.
Fig. 8 is terahertz waveguide power splitter parallel coupling test structure lower chamber structure vertical view of the present invention.
Fig. 9 is the test curve of terahertz waveguide power splitter parallel coupling test structure of the present invention under 325~440GHz frequency range.
Figure 10 is terahertz waveguide power splitter isolation degree test structural upright structural representation of the present invention.
Figure 11 is terahertz waveguide power splitter isolation degree test structure upper cavity structure vertical view of the present invention.
Figure 12 is terahertz waveguide power splitter isolation degree test structure lower chamber structure vertical view of the present invention.
Figure 13 is the test curve of terahertz waveguide power splitter isolation degree test structure of the present invention under 325~440GHz frequency range.
Wherein, 1, upper cavity; 2, lower chamber; 3, waveguide cavity; 3.1, straight coupling measurement structured waveguide chamber; 3.2, parallel coupling test structure waveguide cavity; 3.3, isolation degree test structured waveguide chamber; 4, main waveguide cavity; 5, complementary wave guide cavity; 6, waveguide input section; 7, the straight-through deferent segment of waveguide; 8, waveguide-coupled deferent segment; 9, waveguide distance piece; 10, the first branch-waveguide chamber; 11, the second branch-waveguide chamber; 12, the 3rd branch-waveguide chamber; 13, the 4th branch-waveguide chamber; 14, quintafurcation waveguide cavity; 15, perpendicular corners; 16, boss.
Embodiment
In 325~500GHz frequency range, use the loss of the straight wave guide of DRIE technology processing and manufacturing to be approximately 0.4dB/mm.For reducing loss, straight wave guide length need shorten to suitable length, but this has increased difficulty for testing.Between this, inventor has invented three kinds of test structures and has jointly completed the performance test to power splitter, and this invention is applicable to the performance test of other Terahertz four port devices too.
Be illustrated in figure 1 the core internal structure vertical view of terahertz waveguide power splitter.Three kinds of test structures of the terahertz waveguide power splitter providing for the present patent application are provided on this basis, as shown in Fig. 2, Fig. 6, Figure 10, by superposed upper cavity 1 (as shown in Fig. 3, Fig. 7, Figure 11) be positioned at the stacked formation of lower chamber 2 (as shown in Fig. 4, Fig. 8, Figure 12) of bottom.Upper cavity 1 is sealed on lower chamber 2, and after the upper surface of the lower surface by DRIE technology to upper cavity 1 and lower chamber 2 carries out etching, closure forms needed engraved structure waveguide cavity 3.Waveguide cavity 3 is divided into three kinds of different structures, be respectively straight coupling measurement structured waveguide chamber 3.1, parallel coupling test structure waveguide cavity 3.2 and 3.3, three kinds, isolation degree test structured waveguide chamber structure respectively in order to test straight coupled end insertion loss, parallel coupling end insertion loss and isolation.Waveguide cavity 3 is taking air as filled media, upper cavity 1 and lower chamber 2 are silica-based gold-plated material, on the siliceous substrate that is 0.5mm at two thickness, process respectively the part-structure of waveguide cavity by etching, again by sputter craft of gilding plating Gold plated Layer in waveguide cavity structure, the thickness of Gold plated Layer is preferably 2.5~3.5 μ m, finally two metallized wafer bondings is formed together to the overall structure of waveguide cavity.
Above-mentioned straight coupling measurement structured waveguide chamber 3.1 comprises main waveguide cavity 4 and complementary wave guide cavity 5, between main waveguide cavity 4 and complementary wave guide cavity 5, be from left to right followed successively by the first branch-waveguide chamber 10, the second branch-waveguide chamber 11, the 3rd branch-waveguide chamber 12, the 4th branch-waveguide chamber 13 and the quintafurcation waveguide cavity 14 (as shown in Figure 3, Figure 4) that are cuboid, five branch-waveguide chambeies can be coupled to complementary wave guide cavity 5 from main waveguide cavity 4 by signal.Between the first branch-waveguide chamber 10, the second branch-waveguide chamber 11, the 3rd branch-waveguide chamber 12, the 4th branch-waveguide chamber 13 and quintafurcation waveguide cavity 14, there is respectively boss 16.Main waveguide cavity 4 one end are waveguide input section 6, and the other end is the straight-through deferent segment 7 of waveguide; Complementary wave guide cavity 5 one end are waveguide distance piece 9, and the other end is waveguide-coupled deferent segment 8, and complementary wave guide cavity 5 two ends have respectively perpendicular corners 15 and edge main waveguide cavity 4 one sides extensions dorsad.Section 6 is inputted in two port waveguides of test and the straight-through deferent segment 7 of waveguide is positioned on same level alignment line, and non-test port waveguide-coupled deferent segment 8 and waveguide distance piece 9 have perpendicular corners 15 and extend to side and fill in the larger matched load of volume that absorbing material replaces termination.The first 10 one end, branch-waveguide chamber is connected with the waveguide input section 6 of main waveguide cavity 4, and the other end is connected with the waveguide distance piece 9 of complementary wave guide cavity; Quintafurcation waveguide cavity 14 one end are connected with the straight-through deferent segment 7 of waveguide of main waveguide cavity, and the other end is connected with the waveguide-coupled deferent segment 8 of complementary wave guide cavity.Waveguide input section 6, the straight-through deferent segment 7 of waveguide, waveguide-coupled deferent segment 8, waveguide distance piece 9 are standard WR2.2 rectangular waveguide, and wide, the high size of cross section is respectively 560 μ m ± 5 μ m, 280 μ m ± 5 μ m.Distance between two test ports on a horizontal alignment line is 6mm, and visible straight wave guide length significantly shortens, and effectively reduces unnecessary loss.The planar structure of waveguide cavity can be designed to relatively perpendicular to side signal transmission to center line symmetry, as the center line A-A ' symmetry in relative Fig. 3, Fig. 4, test result is as shown in Figure 5.
Above-mentioned parallel coupling test structure waveguide cavity 3.2 comprises main waveguide cavity 4 and complementary wave guide cavity 5, between main waveguide cavity 4 and complementary wave guide cavity 5, be from left to right followed successively by the first branch-waveguide chamber 10, the second branch-waveguide chamber 11, the 3rd branch-waveguide chamber 12, the 4th branch-waveguide chamber 13 and the quintafurcation waveguide cavity 14 (as shown in Figure 7, Figure 8) that are cuboid, five branch-waveguide chambeies can be coupled to complementary wave guide cavity 5 from main waveguide cavity 4 by signal.Between the first branch-waveguide chamber 10, the second branch-waveguide chamber 11, the 3rd branch-waveguide chamber 12, the 4th branch-waveguide chamber 13 and quintafurcation waveguide cavity 14, there is respectively boss 16.Main waveguide cavity 4 one end are waveguide input section 6, and the other end is the straight-through deferent segment 7 of waveguide.The straight-through deferent segment 7 of waveguide has perpendicular corners 15 and leads 5 one sides along complementary wave dorsad and extend; Complementary wave guide cavity 5 one end are waveguide distance piece 9, and the other end is waveguide-coupled deferent segment 8; Waveguide distance piece 9 has perpendicular corners 15 and edge main waveguide cavity 4 one sides extensions dorsad; Waveguide-coupled deferent segment 8 through twice perpendicular corners 15 and along and waveguide input section 6 same level alignment line directions extend.Section 6 is inputted in two port waveguides of test and waveguide-coupled deferent segment 8 is positioned on same level alignment line; The straight-through deferent segment 7 of non-test port waveguide and waveguide distance piece 9 have perpendicular corners 15 and extend to side and fill in the larger matched load of absorbing material replacement volume.The first 10 one end, branch-waveguide chamber is connected with the waveguide input section 6 of main waveguide cavity 4, and the other end is connected with the waveguide distance piece 9 of complementary wave guide cavity; Quintafurcation waveguide cavity 14 one end are connected with the straight-through deferent segment 7 of waveguide of main waveguide cavity, and the other end is connected with the waveguide-coupled deferent segment 8 of complementary wave guide cavity.Waveguide input section 6, the straight-through deferent segment 7 of waveguide, waveguide-coupled deferent segment 8, waveguide distance piece 9 are standard WR2.2 rectangular waveguide, and wide, the high size of cross section is respectively 560 μ m ± 5 μ m, 280 μ m ± 5 μ m.Distance between two test ports on a horizontal alignment line is 7mm, and visible straight wave guide significantly shortens, and effectively reduces unnecessary loss, and test result as shown in Figure 9.
Above-mentioned isolation degree test structured waveguide chamber 3.3 comprises main waveguide cavity 4 and complementary wave guide cavity 5, between main waveguide cavity 4 and complementary wave guide cavity 5, be from left to right followed successively by the first branch-waveguide chamber 10, the second branch-waveguide chamber 11, the 3rd branch-waveguide chamber 12, the 4th branch-waveguide chamber 13 and the quintafurcation waveguide cavity 14 (as Figure 11, Figure 12) that are cuboid, five branch-waveguide chambeies can be coupled to complementary wave guide cavity 5 from main waveguide cavity 4 by signal.Between the first branch-waveguide chamber 10, the second branch-waveguide chamber 11, the 3rd branch-waveguide chamber 12, the 4th branch-waveguide chamber 13 and quintafurcation waveguide cavity 14, there is respectively boss 16.Main waveguide cavity 4 one end are waveguide input section 6, and the other end is the straight-through deferent segment 7 of waveguide, and main waveguide cavity 4 two ends have respectively perpendicular corners 15 and lead 5 one sides along complementary wave dorsad and extend; Complementary wave guide cavity 5 one end are waveguide distance piece 9, and the other end is waveguide-coupled deferent segment 8, and complementary wave guide cavity 5 two ends have respectively perpendicular corners 15 and edge main waveguide cavity 4 one sides extensions dorsad.The straight-through deferent segment 7 of test port waveguide with waveguide-coupled deferent segment 8 on same level alignment line, non-test port waveguide input section 6 with waveguide distance piece 9 on same level alignment line and fill in absorbing material and replace the matched load that volume is larger.The first 10 one end, branch-waveguide chamber is connected with the waveguide input section 6 of main waveguide cavity 4, and the other end is connected with the waveguide distance piece 9 of complementary wave guide cavity 5; Quintafurcation waveguide cavity 14 one end are connected with the straight-through deferent segment 7 of waveguide of main waveguide cavity 4, the other end is connected with the waveguide-coupled deferent segment 8 of complementary wave guide cavity 5. and waveguide input section 6, the straight-through deferent segment 7 of waveguide, waveguide-coupled deferent segment 8, waveguide distance piece 9 are standard WR2.2 rectangular waveguide, and wide, the high size of cross section is respectively 560 μ m ± 5 μ m, 280 μ m ± 5 μ m.Distance between two test ports on a horizontal alignment line is 7mm, and visible straight wave guide significantly shortens, and effectively reduces unnecessary loss.The planar structure of waveguide cavity can be designed to opposing parallel in side signal transmission to center line symmetry, as the center line B-B ' symmetry in relative Figure 11, Figure 12, test result is as shown in figure 13.
In order to realize better object of the present invention, the method that the present invention takes non-test port to fill in absorbing material replaces the larger matched load of volume, and absorbing material adopts wedge shape structure, tip need be inserted in the non-test lead waveguide of power splitter to be measured mouth.Good by Fig. 5, Fig. 9, the known absorbing material absorbing property of Figure 13, reach the effect that expection is expected.
DRIE processing technology in above-mentioned Micrometer-Nanometer Processing Technology, its technological process is roughly as follows: (a) prepare etch mask: silicon wafer thickness is 500um, on siliceous substrate surface, forms oxide layer; (b) photoetching: the mode by photoetching generates figure on mask layer, figure is positioned at the correspondence position on the siliceous substrate sections mask layer that needs corrosion, and the mask layer of this part is removed to the siliceous substrate under exposing; (c) ICP etch silicon: etch the rectangular channel of prescribed depth and shape, etching depth is 280um; (d) remove mask: after etching, residual mask is removed; (e) gold-plated: by sputter Au, to make the surface metalation of silicon structure; (f) bonding: adopt Au-Au bonding techniques by two enantiomorphous wafer bondings each other, complete flow processing, finally obtain designed THz devices sample by scribing.
Adopting vector network analyzer system to expand module in conjunction with frequency tests, test result shows, center frequency point is about 2dB left and right (deduction 3dB inherent loss) at the insertion loss of the straight coupled end of the E of 380GHz face rectangular waveguide branch line electric bridge power splitter in 350GHz~410GHz broadband, in band, amplitude fluctuation is little, and reflection coefficient of port loss is all better than 15dB.The insertion loss of parallel coupling end is about 1.5dB left and right (deduction 3dB inherent loss) in 350GHz~410GHz broadband, and in band, amplitude fluctuation is little, and reflection coefficient of port loss is all better than 20dB.Isolation is all better than 30dB in 350GHz~410GHz broadband, at 375GHz~385GHz, is all better than 40dB in 10GHz bandwidth.This means that four port devices testing apparatuss of the present invention can realize lower insertion loss at Terahertz low side (325GHz~500GHz), solved the four port power divider losses of Terahertz frequency range excessive, a difficult problem for inconvenience test.
The four port devices testing apparatuss that are applicable to Terahertz frequency range provided by the invention, adopt WR2.2 standard rectangular Waveguide interface, have operating frequency high, and loss is little, is easy to manufacture, and the advantages such as highly versatile have a good application prospect in Terahertz system.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not depart from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.

Claims (4)

1. one kind is applicable to four port devices testing apparatuss of Terahertz frequency range, it is characterized in that: comprise Terahertz branch-waveguide power splitter, the waveguide cavity (3) of described Terahertz branch-waveguide power splitter comprises main waveguide cavity (4) and complementary wave guide cavity (5), described main waveguide cavity (4) and complementary wave guide cavity (5) are parallel to each other and are all rectangular structure, also have N the branch-waveguide chamber that is rectangular structure between described main waveguide cavity (4) and complementary wave guide cavity (5), described main waveguide cavity (4) one end is waveguide input section (6), the other end is the straight-through deferent segment (7) of waveguide, described complementary wave guide cavity (5) one end is waveguide distance piece (9), the other end is waveguide-coupled deferent segment (8), the waveguide input section (6) of described main waveguide cavity (4) and the waveguide distance piece (9) of complementary wave guide cavity (5) are positioned at the same side in N branch-waveguide chamber, the straight-through deferent segment (7) of waveguide and the waveguide-coupled deferent segment (8) of complementary wave guide cavity (5) of main waveguide cavity (4) is positioned at the opposite side in N branch-waveguide chamber, described waveguide cavity (3) specifically comprises straight coupling measurement structured waveguide chamber (3.1), parallel coupling test structure waveguide cavity (3.2) and (3.3) three kinds, isolation degree test structured waveguide chamber test structure waveguide cavity, described waveguide cavity (3) adopts the structure that perpendicular corners is set at particular port, test port is positioned at same level alignment line, non-test port turns to side fills in absorbing material, and described absorbing material adopts Wedge structure, and tip inserts in non-test lead waveguide mouth.
2. the four port devices testing apparatuss that are applicable to Terahertz frequency range as claimed in claim 1, is characterized in that: complementary wave guide cavity (5) two ends in described straight coupling measurement structured waveguide chamber (3.1) have respectively perpendicular corners and edge main waveguide cavity (4) one sides extensions dorsad; The first one end, branch-waveguide chamber (10) is connected with the waveguide input section (6) of main waveguide cavity (4), the other end is connected with the waveguide distance piece (9) of complementary wave guide cavity (5) perpendicular corners, one end, N branch-waveguide chamber is connected with the straight-through deferent segment (7) of waveguide of main waveguide cavity (4), and the other end is connected with the waveguide-coupled deferent segment (8) of complementary wave guide cavity (5) perpendicular corners.
3. the four port devices testing apparatuss that are applicable to Terahertz frequency range as claimed in claim 1, is characterized in that: the straight-through deferent segment (7) of waveguide of the main waveguide cavity (4) of described parallel coupling test structure waveguide cavity (3.2) has perpendicular corners and edge complementary wave guide cavity (5) one sides extensions dorsad; The waveguide distance piece (9) of described complementary wave guide cavity (5) have perpendicular corners and dorsad main waveguide cavity (4) one sides extend, described waveguide-coupled deferent segment (8) through twice perpendicular corners and along and waveguide input section (6) same level alignment line direction extend; The first one end, branch-waveguide chamber (10) is connected with the waveguide input section (6) of main waveguide cavity (4), the other end is connected with the waveguide distance piece (9) of complementary wave guide cavity (5) perpendicular corners, one end, N branch-waveguide chamber is connected with the straight-through deferent segment (7) of waveguide of main waveguide cavity (4) perpendicular corners, and the other end is connected with the waveguide-coupled deferent segment (8) of complementary wave guide cavity (5) perpendicular corners.
4. the four port devices testing apparatuss that are applicable to Terahertz frequency range as claimed in claim 1, is characterized in that: main waveguide cavity (4) two ends in described isolation degree test structured waveguide chamber (3.3) have respectively perpendicular corners and edge complementary wave guide cavity (5) one sides extensions dorsad; Described complementary wave guide cavity (5) two ends have respectively perpendicular corners and edge main waveguide cavity (4) one sides extensions dorsad; Described waveguide is led directly to deferent segment (7) and is positioned at same level alignment line with waveguide-coupled deferent segment (8), and described waveguide input section (6) is positioned at same level alignment line with waveguide distance piece (9); The first one end, branch-waveguide chamber (10) is connected with the waveguide input section (6) of main waveguide cavity (4) perpendicular corners, the other end is connected with the waveguide distance piece (9) of complementary wave guide cavity (5) perpendicular corners, one end, N branch-waveguide chamber is connected with the straight-through deferent segment (7) of waveguide of main waveguide cavity (4) perpendicular corners, and the other end is connected with the waveguide-coupled deferent segment (8) of complementary wave guide cavity (5) perpendicular corners.
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Cited By (5)

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CN104658837A (en) * 2015-02-09 2015-05-27 中国科学院电子学研究所 Terahertz electromagnetic wave power transmission window provided with dual-wedge long-strip-shaped rectangular window flake
CN114552158A (en) * 2022-04-26 2022-05-27 四川太赫兹通信有限公司 E-surface branch waveguide directional coupler based on novel branch waveguide structure
CN114725644A (en) * 2022-05-09 2022-07-08 电子科技大学 E-plane branch waveguide directional coupler with ultralow amplitude unevenness
CN115173015A (en) * 2022-06-15 2022-10-11 电子科技大学长三角研究院(湖州) Novel full-band high-isolation waveguide two-path power divider
CN115548620A (en) * 2022-12-01 2022-12-30 四川太赫兹通信有限公司 Power divider, transmitting front end, receiving front end and communication system

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