CN104183447A - High-energy ion injection device - Google Patents

High-energy ion injection device Download PDF

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Publication number
CN104183447A
CN104183447A CN201410172111.0A CN201410172111A CN104183447A CN 104183447 A CN104183447 A CN 104183447A CN 201410172111 A CN201410172111 A CN 201410172111A CN 104183447 A CN104183447 A CN 104183447A
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ion
energy
electrode
deflecting electrode
high energy
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CN104183447B (en
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椛泽光昭
渡边一浩
佐佐木玄
稻田耕二
佐野信
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Sumitomo Heavy Industries Ion Technology Co Ltd
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SEN Corp
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Priority claimed from JP2013111364A external-priority patent/JP6053611B2/en
Priority claimed from JP2013112036A external-priority patent/JP6076834B2/en
Priority claimed from JP2013113474A external-priority patent/JP6086819B2/en
Priority claimed from JP2013125512A external-priority patent/JP6045445B2/en
Priority claimed from JP2013131358A external-priority patent/JP6080706B2/en
Application filed by SEN Corp filed Critical SEN Corp
Publication of CN104183447A publication Critical patent/CN104183447A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/053—Arrangements for energy or mass analysis electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
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Abstract

The present invention provides a high-energy ion injection device, which maintains the uniformity of injected ion density of a scanned high-energy ion beam, and improves the removability of foreign ions. The high-energy ion injection device comprises an irradiation beam generation unit, having an ion source and a quality analyzing device; a high frequency multi-segment straight line acceleration unit; a deflection unit, including a magnetic field energy analyzing device which carries out ion filtering using the momentum; an irradiation beam transmission line unit; and a substrate processing supplying unit. In the high-energy ion injection device, an electric field final energy filter which enable a high-energy scanning beam to deflect up and down through an electric field is also inserted between an electric field irradiation beam parallelizing device and a wafer, except for a magnetic quality analyzing device and an energy analyzing device used as a momentum filter, and the high frequency multi-segment straight line accelerating unit used as a speed filter.

Description

High energy ion injection device
Technical field
The application advocates the priority of No. 2013-111364th, Japanese patent application based on May 27th, 2013 application.The full content of this application is by reference to being applied in this specification.
The present invention relates to a kind of high energy ion injection device.
Background technology
In semiconductor element manufacturing process, study plot is implemented as follows important operation, this operation is used for impurity being added to the crystallization of semiconductor wafer by squeeze into ion to semiconductor wafer under vacuum, thereby conductivity is changed, and makes semiconductor wafer semiconductor element.The device using in this operation is called as ion implantation apparatus, and this ion implantation apparatus accelerates the foreign atom that is generally used for semiconductor element as ion, and is driven in semiconductor wafer.
Along with semiconductor element highly integrated/high performance, use and can be used in the device that is deeper driven into the high-octane Implantation in semiconductor wafer always.This device is called as high energy ion injection device especially.As an example wherein, there is the method (referring to Patent Document 1) that forms the accelerating system of ion beam with tandem electrostatic accelerator.
(batch (batch-type))
And, also use for a long time the batch processed formula high energy ion injection device (referring to Patent Document 2) that possesses the linear accelerator of high frequency that carries out high frequency acceleration.
Batch processed formula Implantation is following method, is about to tens silicon wafers and is loaded in the outer circumferential side that diameter is the aluminium dish of 1m left and right, makes disk with the rotation degree High Rotation Speed of 1000 times per minute on one side, injects equably ion on one side.In order not make wafer fly out because of centrifugal force, the part that is loaded with wafer of disk is given the angle of 5 ° of left and right with respect to the surfaces of revolution (with the face of rotating shaft direct cross).Due to rotatablely moving of this angle and wafer, there is the problem that differs 1 ° (implant angle deviation) before and after the central part of wafer and end implant angle (ion is injected into the angle of wafer) in batch processed formula ion injection method.
Generally, have the region of wanting to carry out the region of Implantation and cannot carrying out Implantation on the chip of wafer, the region that cannot carry out Implantation can be covered by the organic substance that is called as photoresist layer.Ion can not penetrate photoresist layer in the time injecting, and it is very thick that the photoresist layer being therefore coated with in the time that high energy ion injects becomes.Although need the region of injecting to remove photoresist layer by photoetching process, if integrated level is high and injection zone is small, the situation of the bottom of the deep hole that there will be ion vertically to be squeezed into be surrounded by the wall portion of the photoresist layer towering.In the time that injecting ion, the structure of this high aspect ratio needs higher implant angle precision.
Especially, in manufacturing as the imaging apparatus of the high-quality such as CCD, more deeply inject ion, resolution is improve just more, and sensitivity uprises, and therefore also starts gradually to carry out the Implantation (3～8MeV) of superenergy.Now, the implant angle error being allowed to is 0.1 ° of left and right, cannot use the batch device with larger implant angle deviation.
(monocrystalline chip high energy ion injection device)
Therefore, monocrystalline chip high energy ion injection device is put into use (patent documentation 3) in recent years.Batch mode holding beam mobile wafer (rotatablely moving on disk), inject thus in the horizontal direction uniformly, and in monocrystalline chip device, moving beam (along continuous straight runs carries out beam scanning) fixed wafer.In which, by making scanning beam parallelization, not only can in wafer face, make implantation dosage even, can also make implant angle even, can solve the problem of implant angle deviation.In addition, two kinds of modes are all by making wafer parallel realize the dose uniformity of vertical with certain speed, but can not produce angular error by this motion.
In addition, because monocrystalline chip ion implantation apparatus does not have the consumption etc. of unnecessary silicon wafer when the processing of carrying out several, be therefore applicable to many kinds to produce on a small quantity, demand constantly increases in recent years.
But in the production of high-quality imaging apparatus, not only required angle precision, and also have such as there is no a lot of strict requirements such as metallic pollution, implant damage (the remaining crystal defect after annealing) is less, injection depth accuracy (energy accuracy of measurement) is good, in monocrystalline chip ion implantation apparatus, also stay many parts to be improved.
In monocrystalline chip high energy ion injection device in the past, use tandem static accelerator as high-energy accelerated mode, or the heavy-ion linear accelerator of high frequency accelerated mode (linear accelerator).
Parallel (parallelization) magnet that is provided with energy filtering magnet, beam scanner in the downstream of this accelerating system and carries out the parallelization of scan track by magnetic field.And, no matter become beam at which scanning position by parallel magnet, to wafer to inject angle (injector angle) all identical.Energy to 3～4MeV left and right of ion.
And, in (the monocrystalline chip) using in compared with high energy ion injection device more low-energy region (10～600keV), in a part for current ion injection device, use by electric field (electrode) the electric field parallel lens of scan track parallelization (patent documentation 4).Electric field parallel lens can keep the symmetry of track and make scan track parallelization, therefore compares parallel magnet and more can improve angle precision.And, in this device, be called as the Electric field deflecting electrode of AEF (Angular Energy Filter) being attached with of wafer.Can remove the ion that valence mumber changes in beam transmission process and the particle producing in beamline by AEF, therefore the beam that purity is higher can be provided.
Patent documentation 1: No. 3374335 communique of Japan Patent
Patent documentation 2: TOHKEMY 2000-11944 communique
Patent documentation 3: No. 8035080 communique of United States Patent (USP)
Patent documentation 4: TOHKEMY 2003-288857 communique
Summary of the invention
The present invention completes in view of this situation, and one of its object is to provide the high energy ion injection device of the high-octane ion beam that a kind of Implantation has accurately been scanned.
In order to solve above-mentioned problem, the high energy ion injection device of a mode of the present invention is that the ion beam to extracting from ion source accelerates, and is transferred to wafer and is injected into the high energy ion injection device in this wafer along beamline.This device possesses: beam generation unit, has ion source and quality analysis apparatus; High frequency multistage linear accelerating unit, accelerates and generates high energy ion bundle ion beam; Deflection unit, comprises the conversion of high energy ion Shu Chaoxiang wafer travel direction, and the magnetic field type energy spectrometer device that carries out the filtration of ion with momentum; Beam transmission line unit, is transferred to wafer by the high energy ion bundle of deflection; And processing substrate feed unit, the high energy ion bundle being transferred to is injected in semiconductor wafer equably.Beam transmission line unit has high-energy beam scanner and high-energy Electric field beam parallelizer.And high energy ion injection device is configured to, to carrying out beam scanning from deflection unit high energy ion bundle out by beam scanner and Electric field beam parallelizer and by its parallelization, thereby be injected in wafer.And, in high energy ion injection device, except the magnetic field type quality analysis apparatus as momentum filter, and as outside the high frequency multistage linear accelerating unit of energy spectrometer device, velocity filter also have by electric field make high-energy scanning beam up and down the Electric field final energy filter of direction deflection be inserted between Electric field beam parallelizer and wafer.
Invention effect:
According to a mode of the present invention, can precision carry out Implantation to the high-octane ion beam having scanned well.
Brief description of the drawings
Fig. 1 schematically represents the summary layout of the related high energy ion injection device of present embodiment and the figure of beamline.
Fig. 2 (a) is the vertical view that represents the schematic configuration of ion beam generation unit, and Fig. 2 (b) is the end view that represents the schematic configuration of ion beam generation unit.
Fig. 3 is the vertical view that represents the whole layout of the schematic configuration that comprises high-energy multistage linear accelerating unit.
Fig. 4 represents that linearity is arranged with the block diagram of the structure of the high-energy multistage linear accelerating unit of the accelerating field of multiple high-frequency reonsator front ends (gap) and the control system of converging and diverging lens.
Fig. 5 (a), Fig. 5 (b) are the vertical views that represents the schematic configuration of EFM (energy spectrometer deflection electromagnet), energy width restriction slit, energy spectrometer slit, BM (transverse center track correction deflection electromagnet), beam-shaping device, beam scanner (scanner).
Fig. 6 (a) represents the beamline to beam parallelizer from beam scanner till the vertical view of the schematic configuration of processing substrate feed unit, and Fig. 6 (b) represents the beamline to beam parallelizer from beam scanner till the end view of the schematic configuration of processing substrate feed unit.
Fig. 7 is the schematic diagram of observing the major part of an example of beam scanner from top.
Fig. 8 is the schematic diagram of observing from the side the major part of an example of beam scanner.
Fig. 9 observes the schematic elevational view that the structure of an example of beam scanner is installed freely along the handling of path midway of ion beam line from downstream.
Figure 10 is the schematic diagram that represents the another way of the deflecting electrode of angular energy filter device.
Figure 11 (a) is the vertical view schematically representing as the quadrupole lens of lateral convergence lens, and Figure 11 (b) is the front view that schematically represents quadrupole lens.
Figure 12 (a), Figure 12 (b) are the stereograms that represents an example of the structure of electromagnet.
Figure 13 is the figure of the opening and closing device that schematically represents that electromagnet possesses.
Figure 14 (a) is the schematic diagram of observing the resolver Faraday cup (Resolver Farady cup) roughly the same with injector Faraday cup (Injector Farady cup) structure from front, and Figure 14 (b) is the schematic diagram of the action for resolver Faraday cup is described.
Figure 15 is the schematic diagram of observing the Faraday cup of growing crosswise from front.
Figure 16 (a) represents from the final energy filter of a form of present embodiment till the vertical view of the schematic configuration of processing substrate feed unit, and Figure 16 (b) represents from the final energy filter of a form of present embodiment till the end view of the schematic configuration of processing substrate feed unit.
Figure 17 is the opening for downstream grounding electrode is described, the schematic diagram that AEF suppresses the magnitude relationship between the opening of electrode and the opening of upstream side grounding electrode.
Figure 18 (a) represents the final energy filter related from another variation of present embodiment till the vertical view of the schematic configuration of processing substrate feed unit, and Figure 18 (b) represents the final energy filter related from another variation of present embodiment till the end view of the schematic configuration of processing substrate feed unit.
Figure 19 represents the final energy filter related from another variation of present embodiment till the end view of the schematic configuration of processing substrate feed unit.
Figure 20 (a), Figure 20 (b) are the schematic diagrames that represents an example of the related deflecting electrode of another variation of present embodiment.
Figure 21 is the schematic diagram that represents an example of the related final energy filter of another variation of present embodiment.
Figure 22 (a) represents the final energy filter related from another variation of present embodiment till the vertical view of the schematic configuration of processing substrate feed unit, and Figure 22 (b) represents that the final energy filter of a mode related from another variation of present embodiment is till the end view of the schematic configuration of processing substrate feed unit.
In figure: 10-ion source, 12-ion beam generation unit, 14-high-energy multistage linear accelerating unit, 16-beam deflection unit, 18-beam transmission line unit, 20-processing substrate feed unit, 22-quality analysis apparatus, 24-energy spectrometer electromagnet, 26-quadrupole lens, 27-energy width restriction slit, 28-energy spectrometer slit, 30-deflection electromagnet, 32-beam-shaping device, 34-beam scanner, 36-beam parallelizer, 38-final energy filter, 42-suppresses electrode, 44-ion source high voltage source, 46-ion source high voltage source, 48-terminal, 50-power supply, 52-input unit, 54-control algorithm device, 56-amplitude control unit, 58-phase control device, 60-frequency control apparatus, 62-high frequency electric source, 64-converging and diverging lens, 66-converging and diverging lens current supply, 68-display unit, 70-storage device, 74-suppresses electrode, 80a, 80b-Faraday cup, 82-scanner shell, 84-parallelization lens, 84-electric field parallelization lens, 86a-determinator, 87-upper magnet yoke, 87a-deflecting electrode, 100-high energy ion injection device, 102-AEF chamber, 104-AEF electrode, 108-grounding electrode, 110-suppresses electrode, 110-AEF suppresses electrode, 114-striker plate, 116-processing chamber, 118-energy limited slit, 112-dose cup, 138-final energy filter, 139a-upside deflecting electrode, 139b-downside deflecting electrode, 142-the 1st power supply, 143-the 2nd power supply, 144-upstream side grounding electrode, 145-downstream grounding electrode, 146-angular energy filter device, 147-peristome, 148-final energy filter, 161a, 162a-deflecting electrode, 162a1-flexure plane, 165-final energy filter, 166a-deflecting electrode, 169-graphite, 200-wafer.
Embodiment
Below an example of the related high energy ion injection device of present embodiment is further elaborated.First, the inventor etc. is expected to process of the present invention describes.
(parallelization magnet)
Using makes the high energy ion injection device in the past of the parallelization magnet of parallel track have following problem by magnetic deflection field.
If inject high energy ion to the wafer with photoresist layer, produce a large amount of gas leakage, the molecule of this gas leakage and beam ion interact, and the valence mumber of a part of ion changes.If this valence mumber changes during by parallelization magnet, deflection angle changes, and therefore the collimation of beam is destroyed, dissimilates towards the injector angle of wafer.
And, near the Faraday cup mensuration beam current value that the amount (number or dosage) of the ion injecting is placed in wafer by utilization is obtained, but because valence mumber changes, its measured value produces deviation, depart from predetermined injection rate, cannot become as the characteristic of predetermined semiconductor element.
And the parallelization of being undertaken by 1 parallelization magnet is different from deflection angle and track length on outer side track in inner track, therefore track more in the outer part, the ratio of the ion that valence mumber changes is larger, and the dose uniformity in wafer face also worsens.
Therefore, the beam transmission mode of high energy ion injection device in the past cannot fully meet the requirement of nearest high-precision injection.
And, parallelization magnet need to be on scanning direction the magnetic pole of wider width and the parallelization interval of certain length, when energy uprises, magnetic pole is further elongated and become large, therefore weight becomes very large.In order to assemble safely and holdout device, except need to strengthening the Intensity Design at semiconductor workshop itself, it is very large that power consumption also becomes.
If can use the electric field parallelization lens and electric field (electric pole type) energy filter (AEF:Angular EnergyFilter) that use in high-energy region in aforementioned middle current ion injection device, can address these problems.Electric field parallelization lens keep the symmetry of track and make scan track align and carry out parallelization with central orbit direction, and AEF removed the ion that valence mumber has changed before just will arriving wafer.Thus, even in the time that gas leakage is more, also can obtain not having the beam of energy contamination, and can not produce the deviation of the implant angle of the scanning direction as parallelization magnet, result, can inject equably injection distribution and the injection rate (dosage) of depth direction accurately, and implant angle also becomes identical, can realize the Implantation that precision is very high.And, formed by lightweight electrod assembly, therefore also can reduce power consumption compared with electromagnet.
Core part of the present invention be to invent a kind of by the excellent system introducing of current ion injection device in this to high energy ion injection device, for high energy devices and can carry out the device that the high accuracy equal with middle current device injected.Below, the problem solving in this process is described.Matter of utmost importance is the length of device.
During by deflected ion beam equal angular, the square root of required magnetic field and energy is proportional, and required electric field is proportional with energy itself.Therefore, the length of deflection pole and the square root of energy are proportional, and the length of deflecting electrode and energy are proportional and elongated.Want to carry described electric field parallelization lens and electric field AEF if want and realize the injection of high accuracy angle in high energy ion injection device, beam delivery system (distance till from scanner to wafer) is significantly elongated compared with using the device in the past of parallelization magnet.
For example, as the high energy ion injection device that possesses parallelization mechanism by this electric field, can consider in the same manner the constitution equipments such as ion source, mass analyzing magmet, tandem static accelerator or the linear accelerator of high frequency, beam scanner, scan track parallelization device, energy filter, injection process chamber and substrate conveying equipment (end stations) to be assembled into the roughly structure of linearity with high energy ion injection device in the past.Now, the length of device is in the past about 8m, and the overall length of device is grown to 20m left and right, the setting of setting position and preparation, operation etc. is set becomes on a large scale, and area is set also becomes large.And, also need for the maintenance after assembly alignment adjustment, the device running of each equipment and the working space of repairerment and adjustment.This large-scale ion implantation apparatus cannot meet the requirement that the plant bulk in semiconductor production line is combined with the configuration truth of workshop production line.
Due to this situation, the object of the structure of the beamline in a mode of the present invention is, by realize can guarantee sufficient operating area and simplification/efficient activity setting position setting, prepare and arrange operation and upkeep operation, and the technology of restraint measure area, a kind of high-precision high energy ion injection device that has electric field parallelization lens and electric field energy filter that possesses is provided.
Aforementioned object can realize in the following way, the long line part of the multiple unit that accelerated by the ion beam comprising generating at ion source; And comprise scanning beam is adjusted and the long line part that is injected into multiple unit in wafer forms the beamline of high energy ion injection device, and be made as the type that the turns back beamline of the horizontal U-shaped with opposed long line part.According to the length of the unit from ion source, ion being accelerated, the length of the beam transport unit that comprises beam scanner, beam parallelizer, energy filter etc. is configured to and the length of described same length, thereby realizes this layout.And, in order to carry out upkeep operation, between 2 long line parts, be provided with fully wide space.
A mode of the present invention is to complete taking the layout of this beamline as prerequisite, its object be to provide a kind of by electric field by the symmetrically parallelization of high-octane ion beam having scanned, even if therefore, under the more environment of gas leakage, also can precision carry out well Implantation.
And, another way of the present invention is to complete taking the layout of this beamline as prerequisite, its object be to provide a kind of can do not affect the beam having scanned ion concentration uniformity and filter closely high-octane ion beam, and higher not only energy purity compared with the past but also particle and metallic pollution also less very pure ion beam are injected into the high energy ion injection device in wafer.
At this, the high energy ion injection device of a mode of the present invention is that the ion beam to producing at ion source accelerates, along beamline by beam transmission to wafer and be injected into the high energy ion injection device in this wafer, wherein, this device possesses: beam generation unit, has ion source and quality analysis apparatus; High frequency multistage linear accelerating unit, accelerates and generates high energy ion bundle ion beam; Deflection unit, comprises the magnetic field type energy spectrometer device that makes the conversion of high energy ion Shu Chaoxiang wafer travel direction and carry out the filtration of ion with momentum; Beam transmission line unit, is transferred to wafer by the high energy ion bundle of deflection; And processing substrate feed unit, the high energy ion bundle being transferred to is injected in semiconductor wafer equably.Beam transmission line unit has high-energy beam scanner and high-energy Electric field beam parallelizer, and is configured to by beam scanner and Electric field beam parallelizer from high energy ion Shu Jinhang beam scanning out of deflection unit and by its parallelization.
In this structure, high frequency multistage linear accelerating unit is velocity filter, and magnetic field type quality analysis apparatus and energy spectrometer device are momentum filter.In addition, if by make by electric field high-energy scanning beam up and down the Electric field final energy filter of direction deflection be inserted between Electric field beam parallelizer and wafer, can maintain the uniformity of the ion concentration of scanning beam, and improve the removal capacity of heterogeneous ion.Below, the filtration of this high energy ion bundle is elaborated.
In the accelerating gap of the linear accelerator of high frequency (linear accelerator) that forms high-energy multistage linear accelerating unit, produce the high-frequency electric field of maximum potential difference 90kV, about the direction of this electric field, approximately every 37ns switches to direction that ion is accelerated and the direction of deceleration.For ion beam is accelerated to high-energy, in principle, in the time that ion enters into accelerating gap, at the accelerating gap at all 24～36 places, electric field must be towards acceleration direction.Between accelerating gap and accelerating gap, become the space (drift space) of the electric field such as drift tube and aforesaid convergent lens conductively-closed, must be by this drift space before acceleration direction at the electric field of next accelerating gap at the ion that a certain accelerating gap is accelerated.Too fast or mistake all can be slowed down at next accelerating gap slowly, therefore cannot arrive high-energy., the speed of ion is had to strict restriction.The speed of catching up with well the ion of accelerating phase can be more and more faster, and therefore all catching up with accelerating phase at all accelerating gaps becomes very strict condition.The ion beam that reaches predetermined power is the result of strictly selecting for quality, energy and electric charge (determining the key element of speed) of having passed through based on the linear accelerator of high frequency.This represents that the linear accelerator of high frequency is also outstanding velocity filter.
The ion of the each deflection electromagnet during by beam deflection unit 16 is subject to the effect of centrifugal force and Lorentz force, and they cooperatively interact and draw circular-arc track.The cooperation of this power represents with following formula.
mv 2/r＝qvB
Wherein, quality, v that m is ion are the radius of curvature that speed, r are track, only have this r ion consistent with the pole center radius of deflection electromagnet could be by deflection electromagnet (and the slit in downstream).Q is the electric charge of ion, and B is the magnetic field (magnetic density) of deflection electromagnet.This formula replaces to as follows:
mv＝qBr……(1)
While representing that the valence mumber of ion is identical, can by be applied with certain magnetic field B deflection electromagnet only for thering is the ion of specific momentum mv.
So, linear accelerator is velocity filter, and deflection electromagnet is momentum filter, and, the energy filter by the end setting in beam transmission line unit based on electric field, thus very strict system built up.Ion when deflecting electrode by based on electric field is still subject to the effect of centrifugal force and Coulomb force, and those power cooperatively interact.
mv 2/r＝qE
Wherein, E is electric field, to put with interval g 2 apply+V of deflecting electrode and-when V, be E=2V/g.Only have the ion that the radius of curvature r of track and the center radius of deflecting electrode are consistent could pass through this deflecting electrode (and the slit in downstream).This formula replaces to as follows:
mv 2/2＝qEr/2＝qVr/g……(2)
While representing that the valence mumber of ion is identical, can by be applied with certain voltage certain radius of curvature deflecting electrode only for thering is special exercise energy mv 2/ 2 ion.
So, the beamline of the described structure till from ion source to wafer is provided with the filter of 3 kinds 4 layers with respect to high energy beam, beam higher purity can be supplied to wafer.
And, using final energy filter as Electric Field Mode, by to the orthogonal direction deflection of the plane of scanning motion, thereby on scanning direction, can not produce in orbit path difference (length of the beam trajectory being obtained by scanning position poor), therefore can not affect the uniformity of injected ion concentration and carry out energy filtering.
Final energy filter have for by the ion beam having scanned to the n of the orthogonal direction deflection in scanning direction to (n is more than 1 integer) deflecting electrode.N configures across interval along beamline deflecting electrode each in deflecting electrode, deflecting electrode is the plate-shaped member expanding to ion beam direct of travel and scanning direction, and the mode that is configured to clip beamline with every pair of deflecting electrode from above-below direction is opposite across predetermined space.N is configured to deflection angle to deflecting electrode and increases gradually towards downstream from the upstream side of beamline.By formation electrode like this, can carry out the filtration by electric field to above-mentioned high energy beam.
According to a mode of the present invention, high-octane ion beam is filtered closely, therefore not only energy purity compared with the past is higher, and Ionized foreign matter (particle) and dissimilar metal ion (metallic pollution) also less very pure high energy ion bundle be fed into wafer.And, from filter by 1 parallelization electromagnet different, can not affect the beam having scanned ion concentration uniformity and filter.The higher high-precision high energy ion of uniformity that thus, can carry out distribution in the purity of dopant, the precision of injecting the degree of depth and wafer face injects.
At this, the high energy ion injection device of a form of present embodiment is that the ion to producing at ion source accelerates, along beamline as beam transmission to wafer and be injected into the ion implantation apparatus in wafer.This device is that the ion beam of parallelization is irradiated to accurately to the wafer of mechanical scanning in moving and is injected into the device in wafer, and it possesses: high-energy multistage linear accelerating unit, accelerates and generates high energy ion bundle ion beam; Deflection unit, changes the track of high energy ion bundle towards wafer travel direction; And beam transmission line unit, the high energy ion bundle of deflection is transferred to wafer.
From the high-energy multistage linear accelerating unit that ion beam carried out to the high high frequency (exchange way) accelerating, high energy ion bundle out has the Energy distribution of certain limit.Therefore,, in order the high-octane ion beam of back segment to be carried out to be irradiated to after beam scanning and beam parallelization the wafer of mechanical scanning in moving, need to implement in advance the adjustment of high-precision energy spectrometer, central orbit correction and beam converging and diverging.
Beam deflection unit possesses at least 2 high accuracy deflection electromagnet, and at least 1 energy width limits slit and energy spectrometer slit, and at least 1 lateral convergence equipment.Multiple deflection electromagnet are configured to, energy spectrometer and the ion implantation angle of the high energy ion bundle that critically makes corrections, and suppress energy and disperse.In high accuracy deflection electromagnet, carry out, on the electromagnet of energy spectrometer, nmr probe and hall probe are installed, and hall probe is only installed on other electromagnet.Nmr probe is for the correction of hall probe, and hall probe is for the constant FEEDBACK CONTROL in magnetic field.
Beam transmission line unit can carry out beam scanning and beam parallelization to high-octane ion beam, and scanning beam is irradiated to accurately to the wafer of mechanical scanning in moving and injects ion.
Below, with reference to accompanying drawing, one example of the related high energy ion injection device of present embodiment is further elaborated.In addition, in brief description of the drawings, identical important document is added to same-sign, and suitably omit repeat specification.And below the structure of narration is example, not scope of the present invention is carried out to any restriction.
(high energy ion injection device)
First, the structure of the related high energy ion injection device of present embodiment is briefly described.In addition, the content of this specification not only can be applicable to the ion beam of one of kind as charged particle, can also be applicable to relate to the device of all charged particle beams.
Fig. 1 schematically represents the summary layout of the related high energy ion injection device 100 of present embodiment and the figure of beamline.
The related high energy ion injection device 100 of present embodiment is to have the ion accelerator of the linear accelerated mode of high frequency and the ion implantation apparatus of high energy ion transmission beamline, and the ion producing at ion source 10 is accelerated, along beamline as beam transmission to wafer (substrate) 200 and be injected in wafer 200.
As shown in Figure 1, high energy ion injection device 100 possesses: ion beam generation unit 12, generates ion and carry out quality analysis; High-energy multistage linear accelerating unit 14, accelerates and becomes high energy ion bundle ion beam; Beam deflection unit 16, carries out the control of energy spectrometer, central orbit correction and the energy dispersion of high energy ion bundle; Beam transmission line unit 18, is transferred to wafer by the high energy ion bundle of having analyzed; And processing substrate feed unit 20, the high energy ion bundle being transferred to is injected in semiconductor wafer equably.
Ion beam generation unit 12 has ion source 10, extracts electrode 40 and quality analysis apparatus 22.In ion beam generation unit 12, accelerated when beam extracts by extracting electrode from ion source 10, the beam that has extracted acceleration carries out quality analysis by quality analysis apparatus 22.Quality analysis apparatus 22 has mass analyzing magmet 22a and quality analysis slit 22b.Quality analysis slit 22b is configured in the immediately dead astern of mass analyzing magmet 22a sometimes, is in the inlet portion of high-energy multistage linear accelerating unit 14 but be configured in its next formation in embodiment.
The result of carrying out quality analysis by quality analysis apparatus 22, only picks out and injects required ionic species, the high-energy multistage linear accelerating unit 14 after the ion beam of the ionic species of picking out is directed to.By high-energy multistage linear accelerating unit 14, further the direction of accelerated ion beam changes by beam deflection unit 16.
Beam deflection unit 16 has quadrupole lens 26, energy width restriction slit 27 (with reference to Fig. 5 described later), the energy spectrometer slit 28 of the lateral convergence of energy spectrometer electromagnet 24, the dispersion of inhibition energy and has the deflection electromagnet 30 of turning function.In addition, energy spectrometer electromagnet 24 is called as energy filtering electromagnet (EFM) sometimes.High energy ion bundle is changed by deflection unit travel direction, and towards the direction of substrate wafer.
Beam transmission line unit 18 is for transmitting the ion beam leaving from beam deflection unit 16, and it has beam-shaping device 32, beam scanner 34, beam parallelizer 36 and the final energy filter 38 (comprising final energy separation slot) that are made up of convergence/divergence set of lenses.The length of beam transmission line unit 18 designs according to the length of ion beam generation unit 12 and high-energy multistage linear accelerating unit 14, and linking and form entirety at 16 places, beam deflection unit is the layout of U-shaped.
End in the downstream of beam transmission line unit 18 is provided with processing substrate feed unit 20, accommodate injecting in process chamber: beam monitor, measure the beam electronic current, position, implant angle, converging and diverging angle of ion beam, the ion distribution etc. of direction up and down; Anti static device, prevents the static of the substrate being produced by ion beam; Wafer transport mechanism, moves into and takes out of wafer (substrate) 200 and be set to suitable position/angles; ESC (Electro Static Chuck) keeps wafer in the time of Implantation; And wafer scan mechanism, inject time wafer is moved with the corresponding speed of variation of beam current to beam scanning direction and right angle orientation.
So becoming the high energy ion injection device 100 of U-shaped to reduce each cell location arranges area and can guarantee good workability.And, in high energy ion injection device 100, by each unit and each device are made as to modular structure, thereby can load and unload, assemble according to beamline reference position.
Then, the each unit, the each device that form high energy ion injection device 100 are further elaborated.
(ion beam generation unit)
Fig. 2 (a) is the vertical view that represents the schematic configuration of ion beam generation unit, and Fig. 2 (b) is the end view that represents the schematic configuration of ion beam generation unit.
As shown in Fig. 2 (a), Fig. 2 (b), be provided with at the outlet side of the ion source 10 that is disposed at the upstream of beamline the extraction electrode 40 that extracts ion beam in ion chamber (arc chamber) for the plasma from generating.Near the downstream of extraction electrode 40, be provided with electronics contained the ion beam that suppresses to extract from extraction electrode 40 towards the retrieval inhibition electrode 42 that extracts electrode 40 adverse currents.
Ion source 10 is connected with ion source high voltage source 44.Between extraction electrode 40 and terminal 48, be connected with and extract power supply 50.Dispose the quality analysis apparatus 22 for isolating predetermined ion from the ion beam of injecting and the ion beam having separated being taken out in the downstream of extracting electrode 40.
Shown in Fig. 5, the forefront in the linear accelerating portion housing of high-energy multistage linear accelerating unit 14 disposes the Faraday cup 80a (injector (Injector)) of the total beam current value for measuring ion beam as described later.
Figure 14 (a) is the schematic diagram of observing the resolver Faraday cup 80b roughly the same with the structure of injector Faraday cup 80a from front, and Figure 14 (b) is the schematic diagram of the action for resolver Faraday cup 80b is described.
Injector Faraday cup 80a is configured to and can in beamline, passes in and out from above-below direction by driving mechanism, and, be configured to long in the horizontal direction rectangular bucket-shaped shape, and the upstream side by peristome towards beamline, in the time adjusting ion source and quality analysis electromagnet, except measuring the object of total beam electronic current of ion beam, also for block as required the ion beam that arrives beamline downstream completely in beamline.In addition, as aforementioned, in the inlet portion of the high-energy multistage linear accelerating unit 14 in injector Faraday cup 80a dead ahead, dispose quality analysis slit 22b, and be configured to single quality analysis slit or select the mode of the different multiple slits of width or quality slit width can be changed to off grade or multistage mode according to the size of quality.
(high-energy multistage linear accelerating unit)
Fig. 3 is the vertical view that represents the integral layout of the schematic configuration that comprises high-energy multistage linear accelerating unit 14.The multiple linear accelerator that high-energy multistage linear accelerating unit 14 possesses the acceleration of carrying out ion beam clips the accelerating gap of 1 above high-frequency reonsator 14a.High-energy multistage linear accelerating unit 14 can accelerate ion by the effect of high frequency (RF) electric field.In Fig. 3, high-energy multistage linear accelerating unit 14 injects the 1st linear accelerator 15a of basic multistage high-frequency reonsator 14a of use by possessing high energy ion, and the 2nd linear accelerator 15b that further possesses the multistage high-frequency reonsator 14a appending that superenergy Implantation uses forms.
On the other hand, in the ion implantation apparatus that uses high frequency (RF) to accelerate, must consider the amplitude V[kV of voltage as high-frequency parameter], frequency f [Hz].And, in the time carrying out the high frequency acceleration of multistage, high frequency phase [deg] is each other added as parameter.In addition, need to be used for by convergence/divergence effect control ion beam accelerate midway with accelerate after to up and down diffusion magnetic field lens (for example four utmost point electromagnet) or electric field lens (for example quiet electric quadrupole electrode), the optimum value of their operating parameters changes by the ion energy in the moment at this place according to ion, and the intensity of accelerating field can have influence on convergence and disperse, therefore, after determining high-frequency parameter, determine again their value.
Fig. 4 represents that linearity is arranged with the block diagram of the structure of the high-energy multistage linear accelerating unit of the accelerating field of multiple high-frequency reonsator front ends (gap) and the control system of converging and diverging lens.
High-energy multistage linear accelerating unit 14 comprises 1 above high-frequency reonsator 14a.The constitutive requirements required as the control of high-energy multistage linear accelerating unit 14 need: input unit 52, and it inputs required condition for operator; Control algorithm device 54, it is for calculating various parameters by inputted condition value, and further each constitutive requirements is controlled; Amplitude control unit 56, it is for adjusting high frequency voltage amplitude; Phase control device 58, it is for adjusting high frequency phase place; Frequency control apparatus 60, it is for controlling high frequency frequency; High frequency electric source 62; Converging and diverging lens current supply 66, it is for converging and diverging lens 64; Display unit 68, it is for showing operating parameters; And storage device 70, it is for storing the parameter having been determined.And, in control algorithm device 54, be built-in with the numerical computations code (program) in advance various parameters being carried out numerical computations.
In the control algorithm device 54 of the linear accelerator of high frequency, by built-in numerical computations code, acceleration and the convergence taking the condition inputted as basis to ion beam and disperse and simulate to calculate high-frequency parameter (voltage amplitude, frequency, phase place) to obtain best efficiency of transmission.And, also calculate the parameter (Q coil current or Q electrode voltage) of the converging and diverging lens 64 for effectively transmitting ion beam simultaneously.In display unit 68, show the various parameters that calculate.For the acceleration environment of ability that exceedes high-energy multistage linear accelerating unit 14, indicate to be shown in display unit 68 without the displaying contents of separating.
Voltage amplitude parameter is delivered to amplitude control unit 56 by control algorithm device 54, and amplitude control unit 56 is adjusted the amplitude of high frequency electric source 62.Phase parameter is delivered to phase control device 58, and phase control device 58 is adjusted the phase place of high frequency electric source 62.Frequency parameter is delivered to frequency control apparatus 60.Frequency control apparatus 60 is controlled the output frequency of high frequency electric source 62, and the resonance frequency of high-frequency reonsator 14a to high-energy multistage linear accelerating unit 14 is controlled.Control algorithm device 54 is also controlled converging and diverging lens current supply 66 according to calculated converging and diverging lens parameter.
Dispose in the inside of the linear accelerator of high frequency or before and after it requirement for effectively transmitting the converging and diverging lens 64 of ion beam.; alternately possess and have divergent lens or convergent lens in the front and back of the accelerating gap of the front end of multistage high-frequency reonsator 14a; and dispose at the rear of the lateral convergence lens 64a (with reference to figure 5) of the end of the 2nd linear accelerator 15b the longitudinal convergent lens 64b (with reference to figure 5) appending; convergence to the high-energy accelerated ion beam by high-energy multistage linear accelerating unit 14 and disperse and adjust, so that the ion beam of best two dimensional beam profile section is incident upon the beam deflection unit 16 of back segment.
Every tens nanometers of the direction of the electric field producing at the accelerating gap of the linear accelerator of high frequency are switched the direction that ion is accelerated and the direction of slowing down second.For ion beam is accelerated to high-energy, in the time that the accelerating gap intermediate ion at all tens places enters into accelerating gap, electric field must be towards acceleration direction.At the accelerated ion of a certain accelerating gap until the electric field of next accelerating gap towards must be by the space (drift space) of the electric field conductively-closed between 2 accelerating gaps during acceleration direction.Too fast or mistake all can be slowed down slowly, therefore cannot reach high-energy.Catching up with accelerating phase at all accelerating gaps becomes very strict condition, and therefore reaching this situation of predetermined power becomes the strict situation about selecting for quality, energy and electric charge (determining the factor of speed) of having passed through to be undertaken by the linear accelerator of high frequency.This expression, the linear accelerator of high frequency also can be described as outstanding velocity filter.
(beam deflection unit)
As shown in Figure 1, beam deflection unit 16 comprises as the energy spectrometer electromagnet 24 of energy filtering deflection electromagnet (EFM), energy width restriction slit 27 (with reference to figure 5), energy spectrometer slit 28, controls the quadrupole lens 26 of the lateral convergence that the energy after deflection disperses and has the deflection electromagnet 30 of implant angle correcting function.
Fig. 5 (a), Fig. 5 (b) are the vertical views that represents the schematic configuration of EFM (energy spectrometer deflection electromagnet), energy width restriction slit, energy spectrometer slit, BM (transverse center track correction deflection electromagnet), beam-shaping device, beam scanner (scanner).In addition, the symbol L shown in Fig. 5 (a) represents the central orbit of ion beam.
By the ion beam behind high-energy multistage linear accelerating unit 14 because of synchrotron oscillation forming energy distribute.And when the adjustment amount of accelerating phase is larger, the beam that central value departs from predetermined energy a little penetrates from high-energy multistage linear accelerating unit 14 sometimes.Therefore, set the magnetic field of energy filtering deflecting magnet (EFM) in the mode that only desirable energetic ion can pass through by beam deflection described later unit 16, and limit slit 27 and energy spectrometer slit 28 optionally passes through a part for beam by energy width, thereby make the energy of ion consistent with set point.The transverse width that the energy width of the ion beam that can pass through can limit the opening of slit and energy spectrometer slit by energy width presets.Only have the ion that has passed through energy spectrometer slit be directed to the beamline of back segment and be injected in wafer.
Be injected into if there is the ion beam of Energy distribution the energy filtering electromagnet (EFM) that in aforesaid feedback loop control system, magnetic field is controlled to steady state value, all ion beams of injecting are all along designed path deflection and cause that energy disperses, and the ion within the scope of desirable energy width limits slit 27 by near the energy width being arranged at EFM outlet.On this position, energy disperses to increase gradually to maximum, and the beam dimensions σ being obtained by emittance 1(beam dimensions while thering is no energy width) reduces gradually to minimum value, and disperses the beam width that obtains wider than the beam width based on emittance by energy.While blocking the ion beam of this state with slit, spatial distribution is clearly blocked, but Energy distribution with 2 σ 1corresponding energy width and become more blunt otch.In other words, for example, even slit width is set as to the size corresponding with 3% energy width, also have a part that is less than 3% ion with the energy difference of predetermined Implantation Energy and bump against slot wall and disappear, contrary energy difference is greater than a part for 3% ion and passes through slit.
Energy spectrometer slit is arranged at σ 1become minimum position.On this position, σ 1little of negligible degree compared with slit width, therefore Energy distribution also with spatial distribution almost identical clearly blocked.For example, when the A/F of energy spectrometer slit is also set as being equivalent to 3% size (0.03 η) of energy width, the energy difference that can limit slit by energy width exceedes 3% ion and is all blocked at this.Its result, the beam that is initially the Energy distribution of rectangle has peak value by becoming 0% after 2 slits, and height reduces to 1/2 at ± 3% place, is sharply reduced to afterwards zero dome-type distribution.It is many that the quantity of the ion that energy difference is less becomes relatively, therefore with an energy spectrometer slit is only set and keeps the Energy distribution of essentially rectangular and compared with during by slit, energy width essence reduces.
When the energy of the beam accelerating by linear accelerator departs from predetermined Implantation Energy a little, double aperture slit system have by the effect of the end of the Energy distribution of pruning make by after the energy of beam depart from the effect reducing.For example, when energy width departs from for ± 3% and in addition 3% energy, the half that becomes just (plus) side of the energy of described dome-shaped distribution by the Energy distribution after double aperture slit, the center of gravity of its distribution is that center of energy is substantially near Δ E/E=1%.On the other hand, in the time blocking with single energy analysis slit, center becomes Δ E/E=1.5%.Unsharp effect one that makes to distribute is directed to be suppressed the direction that center of energy departs from and works.
So, depart from these both sides' accelerating system having energy width and energy, improving in order to dwindle the departing from these both sides of energy width and center of energy can accuracy of measurement, the energy limited of effectively being undertaken by double aperture slit.
Energy spectrometer electromagnet needs higher magnetic field precision, and high-precision determinator 86a, the 86b (with reference to figure 5 (b)) that carry out accurate magnetic field measuring are therefore installed.Determinator 86a, 86b are appropriately combined is also referred to as NMR (nulcear magnetic resonance (NMR)) probe of MRP (magnetic resonance probe) and the device of hall probe, MRP is used for proofreading and correct hall probe, and hall probe is for carrying out certain FEEDBACK CONTROL to magnetic field.And energy spectrometer electromagnet is with tight accurate manufacturing technique, so that the inhomogeneities in magnetic field is less than 0.01%.And being connected with current settings precision and current stability, on each electromagnet is 1 × 10 -4above power supply and control appliance thereof.
And, between the upstream side and energy spectrometer slit 28 and energy spectrometer electromagnet 24 of energy spectrometer slit 28, dispose quadrupole lens 26 as lateral convergence lens.Quadrupole lens 26 can be made up of Electric field or magnetic field type.Thus, the energy of ion beam after by U-shaped deflection disperses to be inhibited, and beam dimensions diminishes, and therefore can transmit expeditiously beam.And, lead and reduce at the magnetic pole piece electricity of deflection electromagnet, therefore effectively for example near energy spectrometer slit 28, configure gas leakage discharge vacuum pump.While using electromagnetic levitation type eddy current molecular pump, must be arranged at the position that is not subject to the electromagnet of energy spectrometer electromagnet 24 and deflection electromagnet 30 to reveal influence of magnetic field.By this vacuum pump, can prevent the decline in the beam electronic current being caused by Scattering effects of residual gas of deflection unit.
If the quadrupole lens in high-energy multistage linear accelerating unit 14, dispersion are adjusted with there being larger rigging error on quadrupole lens 26 and beam-shaping device 32, the central orbit of the beam as shown in Fig. 5 (b) distortion, beam easily bumps against slit and disappears, and also causes final implant angle and the deviation of injection phase.But on horizontal plane, according to the magnetic field compensating value of deflection electromagnet 30 with implant angle correcting function, the central orbit of beam is necessarily by beam scanner 34 center.Thus, correct departing from of implant angle.And if apply suitable offset voltage to beam scanner 34, the distortion of the central orbit till from scanner to wafer disappears, the left and right deviation of injection phase is disengaged.
The ion of the each deflection electromagnet during by beam deflection unit 16 is subject to the effect of centrifugal force and Lorentz force, and they cooperatively interact and draw circular-arc track.This cooperation represents with formula mv=qBr.M is that quality, the v of ion is that valence mumber, the B that speed, q are ion is the logical quantity of magnetism density of deflection electromagnet, the radius of curvature that r is track.Only have the radius of curvature r ion consistent with the radius of curvature of the pole center of deflection electromagnet of this track can be by deflection electromagnet.In other words,, when the valence mumber of ion is identical, the ion of deflection electromagnet that can be by being applied with constant magnetic field B is the ion only with the mv of specific momentum.EFM is called as energy spectrometer electromagnet, but is actually the device of analyzing Ion Momentum.The quality analysis electromagnet of BM and ion generation unit is all momentum filter.
And beam deflection unit 16 can be by making 180 ° of deflected ion beams with multiple magnet.Thus, can realize the high energy ion injection device 100 of beamline as U-shaped taking simple structure.
As shown in Fig. 5 (a), beam deflection unit 16 utilizes energy spectrometer electromagnet 24 by from 90 ° of high-energy multistage linear accelerating unit 14 deflected ion beams out.And utilize track correction dual-purpose deflecting magnet 30 by 90 ° of further course of the beam deflections, and be injected into the beam-shaping device 32 of beam transmission line described later unit 18.Beam-shaping device 32 carries out shaping and is supplied to beam scanner 34 beam of having injected.And what prevent from being disperseed to cause by the energy of beam by the lensing of the quadrupole lens 26 shown in Fig. 5 (b) disperses, or utilizes by energy and disperses the beam expansion effect causing to prevent that beam from becoming too small.
Figure 11 (a) is the vertical view schematically representing as the quadrupole lens of lateral convergence lens, and Figure 11 (b) is the front view that schematically represents quadrupole lens.The electrode length of the beamline direct of travel of quadrupole lens 26 shown in the vertical view of Figure 11 (a), and the beam for energy analyzer (EFM deflecting magnet) 24 energy of selecting is shown, the beam of lateral divergence passes through quadrupole lens 26 by the effect of lateral convergence.The lateral convergence effect of the beam that the converging and diverging effect producing by the electrode by quadrupole lens 26 shown in the front view of Figure 11 (b) causes.
As mentioned above, the ion producing at ion source is accelerated and is transferred to wafer and squeezes in ion implantation apparatus, and beam deflection unit 16 utilizes multiple electromagnet to carry out 180 ° of deflections of ion beam between high-energy multistage linear accelerating unit 14 and beam transmission line unit 18.That is, energy spectrometer electromagnet 24 and track correction dual-purpose deflection electromagnet 30 are configured to respectively deflection angle becomes 90 degree, and its result, is configured to and adds up to deflection angle to become 180 degree.In addition, the amount of deflection being undertaken by 1 magnet is not limited to 90 °, can be also following combination.
The magnet that magnet+2 amount of deflection that (1) 1 amount of deflection is 90 ° is 45 °
The magnet that (2) 3 amount of deflections are 60 °
The magnet that (3) 4 amount of deflections are 45 °
The magnet that (4) 6 amount of deflections are 30 °
The magnet that magnet+1 amount of deflection that (5) 1 amount of deflections are 60 ° is 120 °
The magnet that magnet+1 amount of deflection that (6) 1 amount of deflections are 30 ° is 150 °
It is the road of turning back in the beamline of U-shaped as the beam deflection unit 16 of energy spectrometer portion, the radius of curvature r that forms the deflection electromagnet of this unit limits the ceiling capacity of the beam that can transmit, and is the important parameter (with reference to figure 5) of the whole width of determination device and the width of central maintenance area.By by the value optimization of radius of curvature, need not reduce ceiling capacity and just the whole width of device can be suppressed to minimum.And thus, the interval between high-energy multistage linear accelerating unit 14 and beam transmission line unit 18 broadens, can guarantee sufficient working space R1 (with reference to figure 1).
Figure 12 (a), Figure 12 (b) are the stereograms that represents an example of the structure of electromagnet.Figure 13 is the figure of the opening and closing device that schematically represents that electromagnet possesses.As shown in Figure 12 (a), Figure 12 (b), the electromagnet that forms energy spectrometer electromagnet 24 and deflection electromagnet 30 is for example made up of upper magnet yoke 87, lower yoke 88, inner side side yoke 89a, outside side yoke 89b, upper boom (not shown), lower beam 93, upper coil 91a and lower coil 91b.And as shown in figure 13, outside side yoke 89b is divided into 2 parts 89b1 and 89b2, and is become and can be split around in outside by opening and closing device 92a, 92b, and it is not shown, and be configured to the beamline guiding piece container that can load and unload formation beamline.
And, the vacuum tank of the central portion of beam deflection unit 16, the container that for example accommodates energy width restriction slit 27, quadrupole lens 26, energy spectrometer slit 28 etc. is can be from the easily structure of handling of beamline.Thus, can be in the time carrying out upkeep operation, turnover like a cork in the service area of U-shaped beamline central authorities.
High-energy multistage linear accelerating unit 14 possesses the multiple linear accelerator that carries out ion acceleration.Multiple linear accelerators have respectively common linking part, and this linking part is analyzed slit 28 with respect to specific energy in multiple electromagnet and more formed in mode removably by the energy spectrometer electromagnet 24 of upstream side.Similarly, beam transmission line unit 18 also can form in mode removably with respect to deflection electromagnet 30.
And, be arranged at specific energy analysis slit 28 and more can be configured to respect to the high-energy multistage linear accelerating unit 14 of upstream and can load and unload or link by energy spectrometer electromagnet 24 upstream side, that comprise electromagnet.And, during by modular beamline cell formation beam transmission line described later unit 18, be arranged at specific energy analyze slit 28 more the deflection electromagnet 30 of downstream can be configured to respect to the beam transmission line unit 18 in downstream and can load and unload or link.
Linear accelerator and beam deflection unit are disposed on planar bracket respectively, and are configured to by the ion beam track of equipment separately and are in fact contained in (except the track after the deflection of final energy filter) on 1 horizontal plane.
(beam transmission line unit)
Fig. 6 (a) represents the beamline to beam parallelizer from beam scanner till the vertical view of the schematic configuration of processing substrate feed unit, and Fig. 6 (b) represents the beamline to beam parallelizer from beam scanner till the end view of the schematic configuration of processing substrate feed unit.
Only have required ionic species separated by beam deflection unit 16, the beam that becomes the ion that only has required energy value is shaped as desirable section shape by beam-shaping device 32.As shown in Figure 5, Figure 6, beam-shaping device 32 is made up of (Electric field or magnetic field type) convergence/divergence set of lenses such as Q (four utmost points) lens.The beam with the section shape of shaping is parallel to the scanning direction of the plane of Fig. 6 (a) by beam scanner 34 edges.For example, be configured to 3 utmost point Q set of lenses that comprise lateral convergence (longitudinal divergence) lens QF/ lateral divergence (longitudinally assembling) lens QD/ lateral convergence (longitudinal divergence) lens QF.As required, beam-shaping device 32 can be made up of separately lateral convergence lens QF, lateral divergence lens QD respectively, or combines multiple and form.
As shown in Figure 5, the positive front portion of the beam-shaping device 32 of the forefront in scanner shell disposes the Faraday cup 80b (being called resolver Faraday cup) of the total beam current value for measuring ion beam.
Figure 14 (a) is the schematic diagram of observing resolver Faraday cup 80b from front, and Figure 14 (b) is the schematic diagram of the action for resolver Faraday cup 80b is described.
Resolver Faraday cup 80b is configured to and can in beamline, passes in and out from above-below direction by driving mechanism, and, be configured to and there is in the horizontal direction the rectangular bucket-shaped shape on long limit and the upstream side towards beamline by peristome, in the time adjusting linear accelerator and beam deflection portion, except measuring the object of total beam electronic current of ion beam, also for block as required the ion beam that arrives beamline downstream completely in beamline.And resolver Faraday cup 80b, beam scanner 34, inhibition electrode 74 and grounding electrode 76a, 78a, 78b are contained in scanner shell 82.
Beam scanner 34 is the deflection scanning devices (being also referred to as beam scanner) that with the orthogonal horizontal direction of edge and the direct of travel of ion beam, ion beam periodically carried out shuttle-scanning by the electric field of cyclical swing.
Relevant direction of beam travel, beam scanner 34 possesses to clip the opposed scan electrode of 1 couple (2) (bipolar deflection scanning electrode) that the mode of passing through region of ion beam configures oppositely, is similar to the scanning voltage of the triangular wave of the positive and negative variation of constant frequency of 0.5Hz～4000Hz scope and is applied to 2 opposite electrodes with contrary sign respectively.This scanning voltage generates and makes by beam deflection herein the electric field changing in the gap of 2 opposite electrodes.And, according to the cyclical movement of scanning voltage, be scanned by the beam along continuous straight runs in gap.
While carrying out high energy ion injection, be inversely proportional in amount and the scanning frequency of the inner crystal damage generating of silicon wafer.And crystal damage amount affects the quality of produced semiconductor equipment sometimes.Now, can improve by free setting scanning frequency the quality of produced semiconductor equipment.
And, do not applying under the state of scanning voltage, the amount that near the beam spot of measuring wafer in order to make corrections departs from, offset voltage (fixed voltage) is overlapped in scanning voltage.By this offset voltage, sweep limits can left and right deviation, can realize symmetrical Implantation.
In the downstream of beam scanner 34, be configured between 2 grounding electrode 78a, 78b at the inhibition electrode 74 by region with opening of ion beam.At upstream side, although dispose grounding electrode 76a in the front of scan electrode, can configure as required the inhibition electrode with downstream same structure.Suppressing electrode inhibition electronics invades to positive electrode.
And, dispose ground shield 89 in the above and below of deflecting electrode 87a, 87b.Ground shield prevents from attaching the positive electrode that moves into and flow into beam scanner 34 in the secondary electron of beam from outside.By suppressing electrode and ground shield, the power supply of scanner is protected, and the track of ion beam is able to stabilisation.
The rear of beam scanner 34 possesses beam resident (Beam Park) function.Resident being configured to of beam carried out as required the large deflection of level and imports in beam trap the ion beam by beam scanner.
Beam is resident is following system, the obstacle that electric discharge that produces electrode while even carrying out Implantation etc. does not expect, and under this state, continue to inject action, produce bad grade of the uniformity of dosage and inject when bad, instantaneous (in 10 μ s) end the system of beam transmission.In fact, observing significantly reduced moment of beam current, 1.5 times of the output voltage of beam scanning power supply being brought up to the voltage corresponding with maximum sweep width, and beam is imported in the beam trap on parallel lens side.Produce the beam irradiation position on the wafer in moment of obstacle by storage, in the moment of removing the wafer that carries out upper and lower scanning motion after obstacle and arrive this position, make beam turn back to original track, as what does not all occur, continue Implantation thus.
In scanning housing, beam scanning spatial portion, in the downstream of beam scanner 34 is arranged at longer interval, also can obtain sufficient scanning width when narrow and small even if it is configured to beam scanning angle.At the rear of scanning housing in downstream that is positioned at beam scanning spatial portion, so that the mode that the direction of the ion beam of deflection has become the direction of the ion beam before beam scanning deflection is adjusted, be provided with beamline and become the beam parallelizer 36 that parallel mode bending is returned.
The deflection angle of the aberration that produces in beam parallelizer 36 (central part of beam parallelizer and the focal length of left and right end portions poor) and beam scanner 34 square proportional, is therefore made as beam scanning spatial portion long and deflection angle is made as to the less aberration that contributes to very much to suppress beam parallelizer.If aberration is larger, inject when ion beam to semiconductor wafer, different with beam-divergence angle with left and right end portions beam dimensions in center wafer portion, therefore sometimes in the generation deviation qualitatively of product.
And, by adjusting the length of this beam scanning spatial portion, can make the length of beam transmission line unit consistent with the length of high-energy multistage linear accelerating unit 14.
Fig. 7 is the schematic diagram of observing the major part of an example of beam scanner from top.Fig. 8 is the schematic diagram of observing from the side the major part of an example of beam scanner.Fig. 9 observes the schematic elevational view that the structure of an example of beam scanner is installed freely along the handling of path midway of ion beam line from downstream.
As shown in Figure 7, Figure 8, beam scanner 134 is held, is provided with 1 pair of deflecting electrode 128,130, is arranged near the grounding electrode 132 their upstream side and is arranged near the grounding electrode 133 their downstream in casing 150.On the upstream side side of casing 150 and side, downstream and the position corresponding with the peristome of grounding electrode 132,133, be respectively arranged with than the larger peristome 152A of peristome of upstream side peristome (omitting diagram), grounding electrode 133.
Deflecting electrode was realized with being connected by feed through structures of power supply.On the other hand, be provided with terminal and the earthy terminal for deflecting electrode 128,130 is connected with power supply at the upper surface of casing 150.And, on casing 150, be provided with handling and handle easy to carry in 2 sides parallel with beam axis.In addition, be formed with the vacuum exhaust peristome for reducing the pressure in beam scanner 134 in casing 150, it is connected with not shown vacuum pumping hardware.
As shown in Figure 9, casing 150 is arranged in the beam orientating box 170 being fixedly set on support 160 sliding freely.Beam orientating box 170 is fully greater than casing 150, is equipped with 2 guide rails for making casing 150 slide in bottom.Guide rail is along extending with the orthogonal direction of beam axis, and the side of the distolateral beam orientating box 170 of one is set as opening and closing freely by door leaf 172.Thus, in the time of maintenance, inspection beam scanner 134, can take out casing 150 from beam orientating box 170 like a cork.In addition, in order to pin the casing 150 pushing in beam orientating box 170, be provided with engagement mechanism (not shown) at the other end of guide rail.
The assembly of elements of these scanner peripheries is the manipulating object while safeguarding beamline, and upkeep operation can be implemented at working space R1 like a cork.While carrying out the upkeep operation of high-energy multistage linear accelerating unit 14, can implement at working space R1 like a cork too.
In beam parallelizer 36, dispose electric field parallelization lens 84.As shown in Figure 6, electric field parallelization lens 84 by multiple accelerating electrodes of hyperbolic shape roughly to retarding electrode to forming.Each electrode pair is mutually opposed across the acceleration/deceleration gaps that does not produce degree of discharge width, and be formed with the direction of principal axis composition that has the acceleration and the deceleration that cause ion beam concurrently in acceleration-deceleration gap, and with the proportional grow of distance apart from reference axis and ion beam is played to the electric field of the horizontal composition of lateral convergence effect.
Clip the electrode of electrode pair middle and lower reaches side of accelerating gap and the electrode of the upstream side of deceleration gap, and the electrode of the electrode in the downstream of deceleration gap and the upstream side of next accelerating gap shape all-in-one-piece structure respectively, so that these electrodes become same current potential.As shown in Fig. 6 (b), these structures are also made up of the right group body up and down of upper unit and lower unit, and between upper unit and lower unit, the spatial portion that ion beam passes through are set.
From the upstream side of electric field parallelization lens 84, initial electrode (injecting electrode) and last electrode (ejaculation electrode) are retained as earthing potential.Thus, before by parallelization lens 84 and afterwards, the energy of beam does not change.
In middle electrode assembly, on the outlet side electrode of accelerating gap and the entrance side electrode of deceleration gap, be connected with type variable and determine the negative supply 90 of voltage, on the outlet side electrode of deceleration gap and the entrance side electrode of accelerating gap, be connected with type variable and determine the positive supply of voltage (when n section for negative positive and negative ...).Thus, ion beam repeats acceleration/deceleration also gradually towards the direction parallel with the central orbit of beamline.And, finally catch up with the track parallel with the direct of travel (beamline orbital direction) of the ion beam before deflection scanning.
So, the beam being scanned by beam scanner 34 is by comprising the beam parallelizer 36 of electric field parallelization lens etc., is that the axle (reference axis) of 0 degree is parallel with respect to the deflection angle parallel with ion beam direct of travel (beamline orbital direction) before scanning.Now, scanning area is symmetrical about reference axis.
Be sent to electric field final energy filter 38 (AEF (94): Angular Energy Filter) from electric field parallelization lens 84 ion beam out.In final energy filter 94, carry out with just to inject to wafer before the final analysis of energy correlation of ion beam, only have the ionic species of required energy value selected, and match therewith and carry out the removal of the neutral particle without valence mumber of neutralization or the different ion of ion valence mumber.Final energy filter 94 based on this electric deflection consists of the tabular deflecting electrode that on the above-below direction by beamline orbital direction, opposed 1 pair of plane or curved surface form, and with above-below direction in beamline orbital direction on bending ion beam rail alignment and the bending gradually downwards by the deflecting action of final energy filter 94 itself.
As shown in Fig. 6 (a), Fig. 6 (b), electric deflection is made up of 1 pair of AEF electrode 104 with electrode, and is configured to from above-below direction clamping ion beam.In 1 pair of AEF electrode 104, respectively positive voltage is put on to the AEF electrode 104 of upside, and negative voltage is put on to the AEF electrode 104 of downside.While producing deflection because of electric field, by the effect of the electric field of generation between 1 pair of AEF electrode 104, make ion beam deflection downwards approximately 10～20 degree, only have the ion beam of target energy selected.As shown in Fig. 6 (b), in angular energy filter device 94, the only track angle deflection downwards to set by the ion beam of selecteed valence mumber.The beam being only made up of selecteed ionic species like this is in wafer 200 to be irradiated to even angle accurately shone thing.
In reality by the basis of high energy beam deflection, as shown in figure 10, opposed along the vertical direction 1 pair of tabular deflecting electrode 204 is set as matching with ion beam track when bending, cut apart along front and back n according to deflection angle and radius of curvature, and upper electrode separately and lower electrode remain respectively the plate electrode of same potential, this is very excellent aspect making precision and economy.And the tabular deflecting electrode of being cut apart by front and back n is except remaining upper electrode and lower electrode respectively the structure of same potential, the plate electrode of 1 pair up and down of cutting apart as n, also can be set as different separately current potentials.
By adopting this structure, can on high-octane scanning beam transmission line, carry Electric field high-energy filter., therefore do not affect the density distribution (uniformity) of the injection ion of beam scanning direction, and can carry out energy spectrometer making beam deflection with the orthogonal direction of beam scanning face by electric field.
And, be equipped with final energy filter, in this beamline, be equipped with altogether 3 kinds of beam filter together with the linear accelerator of high frequency of high-energy multistage linear accelerating unit 14 and the magnetic field type EFM (energy spectrometer electromagnet 24) of U-shaped deflector and BM (deflection electromagnet 30) thus.As aforementioned, the linear accelerator of high frequency is speed (v) filter, and EFM and BM are momentum (mv) filter, this final energy filter energy (mv as by name in it 2/ 2) filter.So, by the different triple filter device of set-up mode, not only energy purity compared with the past is high, but also particle and the less very pure ion beam of metallic pollution can be supplied in wafer.
In addition, in function, EFM can carry out the removal of energy contamination and the restriction of energy width through the linear accelerator of high frequency with high de-agglomeration, AEF is with lower resolution, and the task of removing the ion changing because of resist gas leakage valence mumber is mainly born in the beam transmission line unit after the energy spectrometer being undertaken by EFM.
Final energy filter 94 possesses grounding electrode 108 at the upstream side of final energy filter 94, and possesses the electrode group that is provided with AEF inhibition electrode 110 between 2 grounding electrodes in downstream.This AEF inhibition electrode 110 suppresses electronics and invades to positive electrode.
Beam electronic current amount when the dose cup 122 that utilization is configured in the grounding electrode left and right end in the downstream of final energy filter 94 is measured as the injection of dose objective.
(processing substrate feed unit)
In Fig. 6 (a), the arrow that illustrate adjacent with wafer 200 represents the situation that beam is scanned along the direction of these arrows, in Fig. 6 (b), the arrow that illustrate adjacent with wafer 200 represents that wafer 200 moves back and forth by the situation of mechanical scanning along the direction of these arrows.,, if beam is for example set as along one axially by shuttle-scanning, wafer 200 is driven along the mode moving back and forth with an above-mentioned axial rectangular direction with the driving mechanism by not shown.
Carry the processing substrate feed unit 20 that is supplied to precalculated position and carries out the processing based on Implantation to be contained in processing chamber (injection process chamber) 116 wafer 200.Processing chamber 116 is communicated with AEF chamber 102.In processing chamber 116, dispose energy limited slit (EDS:Energy Defining Slit) 118.Energy limited slit 118 liquid containers have the passing through of ion beam of energy value outside used and valence mumber, only separate thus and have by the energy value used of AEF and the ion beam of valence mumber, are configured to the slit of growing crosswise along scanning direction for this reason.And the interval that energy limited slit 118 separates in order to adjust slit, also can form slit body with movable parts from above-below direction, and can tackle multiple measurement objects such as measurement of energy spectrometer and implant angle.And, also can be configured to the movable slit parts that switch up and down and possess multiple slit jaws, after switching these slit jaws, adjust along the vertical direction or rotate by the axle that further makes upper and lower slit, thereby changing to desirable slit width.By these multiple slit jaws are switched successively according to ionic species, also can be set as reducing the structure of cross pollution.
Plasma shower device 120 is supplied to ion beam on track and the front surface of wafer 200 according to the beam electronic current amount of ion beam by low energy electrons, and suppresses the charging (charge up) of the positive charge being produced by Implantation.In addition, also can be configured for and measure the dose cup (not shown) of dosage at the left and right of plasma shower device 120 end, replace the dose cup 122 of the grounding electrode left and right end in the downstream that is configured in final energy filter 94 with this.
Beam in cross section instrument 124 possesses the beam in cross section instrument cup (omitting diagram) of the mensuration for carrying out the locational beam electronic current of Implantation.Beam in cross section instrument 124 makes it move to horizontal direction on one side before Implantation, measures the density of an ion beam of Implantation position on one side within the scope of beam scanning.Carry out the result of beam in cross section mensuration, when the anticipation inhomogeneities (PNU:Predicted Non Uniformity) of ion beam does not meet technological requirement, correction beam scanner 34 execute alive control function, be automatically adjusted into and meet process conditions.And, also can be configured to vertical section cup (Vertical profile cup) (omitting diagram) is set on beam in cross section instrument 124 simultaneously, and measure beam shape/beam X-Y position, thereby the beam shape on confirmation injection phase, and combine beam width, beam centre position and disperse mask (Divergence Mask) and confirm implant angle and beam divergence angle.
Downstream in beamline disposes the Faraday cup 126 of growing crosswise of the beam electronic current measurement function with the ion beam that can spread all over all wafers area measure sweep limits, and is configured to and measures the final beam of installing.Figure 15 is the schematic diagram of observing the Faraday cup of growing crosswise from front.In addition, in order to reduce cross pollution, the Faraday cup 126 of growing crosswise can be set as having and can switch according to ionic species the structure of the suitching type bottom surface of three structure Faraday cups of 3 faces of prism.And, also can be configured to and vertical section cup (Vertical profile cup) (omitting diagram) is set growing crosswise on Faraday cup 126 simultaneously, and measure beam shape and beam upper-lower position, thereby can monitor implant angle and beam divergence angle at the above-below direction of injection phase.
As aforementioned, as shown in Figure 1, in high energy ion injection device 100, each unit is configured to U-shaped in the mode of surrounding working space R1.Therefore, being arranged in the operating personnel of working space R1 can be by minimal movement to carrying out replacing, maintenance and the adjustment of parts compared with multiple unit.
(considering integral layout, maintainability, productivity, earth environment)
Above, the related high energy ion injection device 100 of present embodiment accelerates the ion beam being generated by ion beam generation unit 12 by high-energy multistage linear accelerating unit 14, and by the 16 travel direction conversions of beam deflection unit, and be irradiated on the substrate of processing substrate feed unit 20 that is positioned at the end that is arranged on beam transmission line unit 18.
And high energy ion injection device 100 comprises high-energy multistage linear accelerating unit 14 and beam transmission line unit 18 as multiple unit.And high-energy multistage linear accelerating unit 14 and beam transmission line unit 18 are configured to across the working space R1 shown in Fig. 1 and are opposite.Thus, in device in the past, be configured to roughly high-energy multistage linear accelerating unit 14 and the beam transmission line unit 18 of linearity and be folded back configuration, therefore can suppress the overall length of high energy ion injection device 100.And, form beam deflection unit 16 multiple deflection electromagnet radius of curvature so that the mode of device width minimum be optimized.Thus, the area that arranges of device is minimized, and in the working space R1 being sandwiched between high-energy multistage linear accelerating unit 14 and beam transmission line unit 18, can carry out the operation for each device of high-energy multistage linear accelerating unit 14 and beam transmission line unit 18.
And the multiple unit that form high energy ion injection device 100 comprise: ion beam generation unit 12, it is arranged on the upstream side of beamline and produces ion beam; Processing substrate feed unit 20, it is arranged on the downstream of beamline and supply processing and is injected with the substrate of ion; And beam deflection unit 16, its be arranged on from ion beam generation unit 12 towards the beamline of processing substrate feed unit 20 midway and the track of deflection beam line.And, ion beam generation unit 12 and processing substrate feed unit 20 are disposed to a side of beamline entirety, and beam deflection unit 16 are disposed to the opposite side of beamline entirety.Thus, the supply of ion source 10, the substrate that need to safeguard with the short period and to take out needed processing substrate feed unit 20 adjacent and configure, therefore operating personnel's movement is less also no problem.
And high-energy multistage linear accelerating unit 14 possesses multiple a series of linear accelerators of the acceleration of carrying out ion, multiple a series of linear accelerators can have common linking part separately.Thus, according to the needed energy of ion injecting to substrate, can change like a cork the value volume and range of product of linear accelerator.
And, can be used as and there is standardized shape with the linking part of adjacent cells as the beam scanner 34 of scanner device and as the beam parallelizer 36 of parallelization lens devices.Thus, can change like a cork the value volume and range of product of linear accelerator.And structure and the quantity of the linear accelerator that beam scanner 34 and beam parallelizer 36 can possess according to high-energy multistage linear accelerating unit 14 are selected.
And, also can be configured in high energy ion injection device 100, make the framework of each device and vacuum chamber integrated, and the reference position of alignment device framework or vacuum chamber and assembling, can carry out thus the centering (position adjustment) of beam.Thus, numerous and diverse centering operation becomes Min., can shorten the device debugging time, can suppress the departing from of axle producing because of job error.And, also can implement the centering each other of continuous vacuum chamber with module unit.Can reduce thus working load.And, the size of modular device can be set as below the easy mobile size of device.The movement that thus, can reduce module and high energy ion injection device 100 arranges load.
And, on the support that high energy ion injection device 100 also can be assembled into one the constitution equipment that comprises high-energy multistage linear accelerating unit 14, beam transmission line unit 18 and exhaust apparatus etc.And high energy ion injection device 100 is set as roughly comprising high-energy multistage linear accelerating unit 14, beam deflection unit 16 and beam transmission line unit 18 in same level on plane basal disc.Thus, high energy ion injection device 100 can be adjusted to be fixed under the state on the plane basal disc of same level, and each is directly carried, while therefore transmission, seldom produce adjustment deviation, economize the trouble of much adjusting again at the scene.Therefore, can avoid taking a lot of skilled persons to scene and make their long-time diseconomy of being detained.
And, if make above-mentioned plane-based dish type be formed in the middle of but not on the base plate of support, can on plane basal disc, only carry the said equipment directly related with ion beam track.And, using with respect to these be that the parts such as high frequency stereo circuit are all assembled in the space that is formed on plane basal disc below as auxiliary equipment, thereby improve space availability ratio, can realize more small-sized ion implantation apparatus.
Therefore, even above-mentioned high energy ion injection device 100 also can be set the place of not having more than needed in place is set, and with making the position of assemble state of adjusting in workshop and directly transfer to needs, can adjust and use by assembled in situ and finally.And the high energy ion more than correct level that utilizes that high energy ion injection device 100 can be realized the resistance to semiconductor production line of manufacturing workshop in (standing) semiconductor injects.
As above, the layout of each unit and each device is designed, thereby high energy ion injection device 100 compared with the past is by significantly miniaturization, can be contained in arranging in length about half in the past.And, the related ion implantation apparatus of present embodiment is assembled in each constitutive requirements on basal disc in manufacture workshop, determine in the enterprising line position adjustment of basal disc under the state of ion beam track and directly carried and be transported to scene to transmission vehicle, and on the basis of installing by support, adjust a little and the deviation that produces in removing conveying, just can make device running.Therefore, even if be not that skilled person also can especially easily and exactly implement on-the-spot adjustment, and can shorten between limber up period.
And by getting as the turn back layout of type beamline of longer U-shaped, can realize can be by the ion implantation apparatus that the high energy ion of the highest 5～8MeV injects with high accuracy.And this ion implantation apparatus, by having this layout of central corridor (middle section), has sufficient maintenance area with the less area that arranges.And, in the time that ion implantation apparatus turns round, by the running because using the low consumption electric power that electric field parallel lens, Electric field scanner and electric field AEF etc. obtain, can reduce power consumption.In other words, the related ion implantation apparatus of present embodiment has the parallelization mechanism of the scanning beam that uses electric deflection formula parallelization lens devices and obtain, thereby can carry out the running of low consumption electric power.
Above, describe the present invention, but the present invention is not limited to above-mentioned execution mode with reference to above-mentioned execution mode, the device that the structure of execution mode is suitably combined and replaced is also contained in scope of the present invention.And, also can suitably change the order of the combination in each execution mode and processing according to those skilled in the art's knowledge, or each execution mode is applied to the distortion such as various design alterations, the execution mode that is applied with this distortion also can be within the scope of the present invention.
Below, according to execution mode, different shape of the present invention is enumerated.
Figure 16 (a) represents from the final energy filter of a form of present embodiment till the vertical view of the schematic configuration of processing substrate feed unit, and Figure 16 (b) represents from the final energy filter of a form of present embodiment till the end view of the schematic configuration of processing substrate feed unit.Figure 22 (a) represents the final energy filter related from another variation of present embodiment till the vertical view of the schematic configuration of processing substrate feed unit, and Figure 22 (b) represents that the final energy filter of a mode related from another variation of present embodiment is till the end view of the schematic configuration of processing substrate feed unit.
Final energy filter 138 shown in Figure 16 (a), Figure 16 (b) have for by the ion beam having scanned to 3 couples of deflecting electrode 139a, 139b, 140a, 140b and 141a, the 141b of the orthogonal direction deflection in scanning direction.In addition, the quantity of deflecting electrode can be for n be to (n is more than 1 integer).In 3 pairs of deflecting electrodes, each right deflecting electrode configures across interval along beamline L1.Each deflecting electrode is the plate-shaped member expanding to direction of beam travel X1 and scanning direction Y1, and it is opposite across predetermined space that the every pair of deflecting electrode is configured to mode to clip beamline L1 from above-below direction.And 3 couples of deflecting electrode 139a, 139b, 140a, 140b, 141a and 141b are configured to deflection angle and increase gradually towards downstream from the upstream side of beamline L1.
As mentioned above, the high energy ion injection device of the beam scanning mode of a form of present embodiment has the uniformity that makes the high-octane ion beam having scanned keep beam current density, and the good final energy filter 138 of the precision of deflection angle.This final energy filter 138 for make beam to beam energy/valence mumber of the Electric Field Mode of orthogonal direction Z (with reference to Figure 16 (the b)) deflection of scanning direction Y1 than selecting energy filter.
Above-mentioned final energy filter 138 makes ion beam deflection gradually by using 3 pairs of deflecting electrodes in the longer interval that utilizes electric field, therefore bring into play the effect of the energy filter that precision is higher.Thus, can make the high-octane ion beam high accuracy deflection that scanned, and be irradiated to wafer 200.And, can make the variation of quality of beam compared with little and keep the uniformity of beam current density, therefore can select the ion of desirable energy/valence mumber and be injected in wafer with high accuracy.
And 3 upside deflecting electrode 139a, the 140a and the 141a that are disposed at the top of beamline L1 in 3 couples of deflecting electrode 139a, 139b, 140a, 140b, 141a and 141b are connected with the 1st power supply 142, to become the 1st mutually the same current potential.Similarly, 3 downside deflecting electrode 139b, the 140b and the 141b that are disposed at the below of beamline are connected with the 2nd power supply 143, to become the 2nd mutually the same current potential.Thus, compared with in the time that each deflecting electrode arranges power supply, suppressed the quantity of power supply.
Deflecting electrode 139a, 139b, 140a, 140b, 141a and 141b are made up of plane with the opposed inner surface of beamline L1.And, the inner surface separately of 3 couples of deflecting electrode 139a, 139b, 140a, 140b, 141a and 141b approximate towards being configured to track with the ion beam of institute deflection.The ideal form of the electrode of the final energy filter 138 of electric field type is cylindrical shape.Therefore, only use 1 pair of dull and stereotyped electricity level to be difficult to carry out desirable deflection.Therefore, for example, the impact of beam trajectory is narrowed down in minimum scope and is made up of multiple planes by making, can carry out the desirable deflection higher along the precision of beamline.And by utilizing the plane of deflecting electrode, comparing easy machining with curved surface with cylinder also can be with low-cost production.
In addition, the width of the direction of beam travel X1 of deflecting electrode (length) is accompanying the difference of both sides up and down of beamline L1, therefore, can make the Segmentation Number difference of upper and lower deflecting electrode.For example, upside deflecting electrode can be made as to n section (n is cut apart), (m is cut apart: n ≠ m) downside deflecting electrode can be made as to m section.That is, the quantity separately of upside deflecting electrode and downside deflecting electrode is without certain consistent, a side can than opposite side is many also can be fewer than opposite side.
N upside deflecting electrode can have mutually the same shape, and n downside deflecting electrode also can have mutually the same shape.Thus, parts can share, and therefore can reduce manufacturing cost.In addition, each deflecting electrode is configured to and can moves in orbit.Thus, maintainability improves.And, by improving the positioning precision of track, thereby can configure in position deflecting electrode.
Above-mentioned 3 upside deflecting electrode 139a, 140a and 141a comprise the different multiple deflecting electrode of length of direction of beam travel X1.And 3 downside deflecting electrode 139b, 140b and 141b comprise the different multiple deflecting electrode of length of direction of beam travel X1.Thus, even the deflecting electrode being made up of plane with the opposed inner surface of beamline also can be realized the deflection plane (arc surface) that approaches desirable ion beam.
And, being waited the result of furtheing investigate from the inventor, deflecting electrode is configured to better by 3 pairs.To deflecting electrode cut apart that quantity is carried out various changes and the result of carrying out electric Field Calculation, be knownly all made as up and down 3 and can be enough to ignore the impact on beam trajectory while cutting apart, and can make Segmentation Number minimum.Now, due to plane approximation cylinder, therefore produce in orbit slight error.This is because if electrode is a part (circular arc) for cylinder, the electric field in beam trajectory can be always even, but electric field can be uneven during with multiple plane approximation.Therefore, for this point that makes corrections, to change a little from desirable beam trajectory center till the distance of upper and lower plane deflecting electrode.Particularly, can make from the center of beamline track till be positioned at large 1% left and right of distance that the distance of the upside deflecting electrode of upside compares the downside deflecting electrode that is positioned at downside.
Dispose in the beamline downstream of final energy filter 138 ion beam there is upstream side grounding electrode 144 and the downstream grounding electrode 145 of opening by region, and be configured in AEF between upstream side grounding electrode 144 and downstream grounding electrode 145 and suppress electrode 110.And, as shown in Figure 16 (b), if the peristome of each electrode is configured to, the aperture area of upstream side grounding electrode 144 being made as to S1, the aperture area that AEF is suppressed to electrode 110 is made as S2, and the aperture area of downstream grounding electrode 145 is made as to S 3meet S 1< S 2, S 3< S 2.When beam bumps against AEF inhibition electrode 110, electronics is released, and this becomes the reason of electric discharge.Therefore, by AEF is suppressed the aperture area of electrode 110 be made as larger than the aperture area of the grounding electrode in upstream side grounding electrode 144 and downstream 145, thereby make ion beam be difficult to bump against AEF suppress electrode 110.
Then, the grounding electrode 145 in upstream side grounding electrode 144, AEF inhibition electrode 110 and downstream openings of sizes separately is further elaborated.Figure 17 is the schematic diagram that opening for downstream grounding electrode is described, AEF suppress the magnitude relationship between the opening of the opening of electrode and the grounding electrode of upstream side.If width and the length of the opening 144a of upstream side grounding electrode 144 are made as to W 1and H 1, width and the length of the opening 110a that suppresses electrode 110 are made as to W2 and H2, the width of the opening 145a of the grounding electrode in downstream 145 and length are made as to W3 and H3, each electrode is configured to and meets W 1< W 2, W 3< W 2and H 1< H 2, H 3< H 2.In addition, the opening 145a of the opening 144a of upstream side grounding electrode 144 and the grounding electrode 145 in downstream can be formed objects., opening 144a and opening 145a are configured to and meet W 1=W 3, H 1=H 3.
And, in the downstream of the end regions R3 of deflecting electrode, each side arrange one as the dose cup 122 of current-flow test set of the magnitude of current of measuring the ion beam while injecting at scanning direction Y1.Each deflecting electrode is configured to than can effectively carrying out the end regions R3 more in the outer part for effective injection zone R2 of the Implantation of wafer, also can make the orthogonal direction Z deflection in high energy ion Shu Xiangyu scanning direction having scanned.Thus, can carry out the deflection of ion beam in the region larger than effective injection zone R2, the uniformity of the electric field in effective injection zone R2 is improved.
And AEF inhibition electrode 110 is configured to the unwanted electronics of inhibition and is injected into dose cup 122 or escapes from dose cup.Thus, the AEF of final energy filter 138 suppresses the inhibition electrode that electrode 110 is also used as dose cup 122, therefore can reduce the quantity of the parts that form beamline.For example, near the entrance of dose cup 122, do not need to suppress for making unwanted rotary electronic with the gyromagnetic radius that is enough less than this A/F the permanent magnet of electronics to dose cup turnover, can be by current-flow test set integral miniaturization.
Therefore, the space that arranges of current-flow test set can be less, and can reduce the beam being produced by current-flow test set and lose.And, can reduce costs by the quantity that reduces parts.In addition,, when current-flow test set is configured near the downstream of final energy filter 138, near current-flow test set, can produce the stronger electric field being produced by deflecting electrode.Under this situation, if be provided with the magnet for current-flow test set, the magnetic field being produced by this magnet with produced by deflecting electrode overlapping compared with high-intensity magnetic field, likely produce complicated and be difficult to the motion of the electronics of prediction.Now, those electronics enter current-flow test set and are measured, thereby lead to errors ground metrology beam electric current.But, if the related final energy filter 138 of present embodiment just can be avoided this problem.
And, in the angular energy filter device (AEF) 146 of a part that forms final energy filter 138, the anticipation neutral particle that straight line carries out between deflecting electrode especially clashes into the inner surface of the deflecting electrode (for example, deflecting electrode 141a shown in Figure 16 (b)) in downstream.If particle hits deflecting electrode, this part is concentrated wearing and tearing (sputter) and the shape of electrode changes, and therefore the uniformity of electric field worsens.Its result, the track of beam is distorted, likely uncontrollable high-precision implant angle.
At this, as shown in Figure 22 (a) and Figure 22 (b), in the related final energy filter 138 of another variation of present embodiment, a part at the deflecting electrode 141a of the neutral particle position that straight line carries out between deflecting electrode is formed with peristome 147, so that particle does not clash into this part.And, as aforementioned, be provided with reception not by 146 deflections of angular energy filter device and the striker plate 114 of the neutral particle that straight line carries out etc. at the outlet side of AEF chamber 102.Thus, avoid the inner surface of the concentrated shock deflecting electrodes such as neutral particle.
In addition, can manage and the corresponding position of peristome 147 configure each deflecting electrode to form the mode in the gap between adjacent deflecting electrode.Thus, without peristome being set at deflecting electrode itself, just can form uniform electric field.And neutral particle and energy contamination composition do not clash into deflecting electrode and straight line carries out and passes through, suppressed by the generation of clashing into the secondary electron producing thus.
Then, variation is described.Figure 18 (a) represents the final energy filter related from modified embodiment of the present embodiment till the vertical view of the schematic configuration of processing substrate feed unit, and Figure 18 (b) represents the final energy filter related from another variation of present embodiment till the end view of the schematic configuration of processing substrate feed unit.In addition, for the structure identical with the final energy filter shown in Figure 16 and Figure 22, suitably description thereof is omitted.
Final energy filter 148 shown in Figure 18 (a), Figure 18 (b) have for by the ion beam having scanned to 3 couples of deflecting electrode 151a, 151b, 152a, 152b, 153a and 153b of the orthogonal direction Z deflection of scanning direction Y1.Deflecting electrode 151a, 151b, 152a, 152b, 153a and 153b are disposed at the inside as the AEF chamber 102 of vacuum tank.On each deflecting electrode, be formed with beamline L1 above or below multiple holes 154 of being communicated with, space.That multiple holes 154 are formed as rule or irregular arrangement is to keep the uniformity of electric field.
From electric viewpoint, not in deflecting electrode punching and integral production just can not weaken electric field for preferably.But, in the situation of the deflecting electrode of atresia, the approximate sealing state in space between opposed deflecting electrode, vacuum degree worsens.Especially, between the deflecting electrode of final energy filter, there is the gas that carries out producing when resist wafer injects in the processing substrate feed unit 20 in downstream to flow into, become the region that is difficult to exhaust.Its result is well imagined, the possibility raising of electric discharge, or the loss of beam increases.Therefore by electrode punching, improve electricity and lead, can keep good vacuum.The weakening of the electric field being caused by hole in addition, can supplement by applying unnecessary voltage.
In final energy filter 148, by multiple holes 154 are disperseed to the direction (scanning direction Y1) of intersecting with direction of beam travel X1, thereby the deflection that can suppress ion beam becomes inhomogeneous situation on the Y1 of scanning direction.
Figure 19 represents the final energy filter related from another variation of present embodiment till the end view of the schematic configuration of processing substrate feed unit.In addition, for the structure identical with the final energy filter shown in Figure 16 and Figure 22, suitably description thereof is omitted.
Final energy filter 165 shown in Figure 19 have ion beam for making to have scanned to 3 couples of deflecting electrode 166a, 166b, 167a, 167b, 168a and 168b of the orthogonal direction Z deflection in scanning direction.Deflecting electrode 166a, 166b, 167a, 167b, 168a and 168b are disposed at the inside as the AEF chamber 102 of vacuum tank.Being formed by graphite 169 with the opposed inner surface side of beamline of each deflecting electrode.
The filter of the impurity that final energy filter 165 comprises for ion beam, impurity bumps against deflecting electrode, thus the surface of deflecting electrode is sputtered.Therefore, by forming at least inner surface of deflecting electrode by the few graphite 169 of impurity, thereby can suppress the metallic pollution to wafer 200.In addition, can form deflecting electrode entirety by graphite, or, can be in deflecting electrode, only have a part of region that impurity that ion beam comprises more easily bumps against to be formed by graphite.In addition, the surface configuration of graphite 169 is waveform.Thus, can suppress the impact of the sputter producing from graphite surface.
Figure 20 (a), Figure 20 (b) are the schematic diagrames that represents an example of the related deflecting electrode of another variation of present embodiment.
Final energy filter shown in Figure 20 (a) have ion beam for making to have scanned to 1 couple of deflecting electrode 161a, 161b of the orthogonal direction deflection in scanning direction.1 couple of deflecting electrode 161a, 161b configure across interval one another along beamline, and are configured to clip the mode of beamline from above-below direction each other opposite across predetermined space.And 1 couple of deflecting electrode 161a, 161b are made up of circular arc camber with the opposed inner surface of beamline, so that deflection angle increases towards downstream gradually from the upstream side of beamline L1.
And, the final energy filter shown in Figure 20 (a) have ion beam for making to have scanned to 1 couple of deflecting electrode 162a, 162b of the orthogonal direction deflection in scanning direction.1 couple of deflecting electrode 162a, 162b configure across interval one another along beamline, and are configured in the mode that beamline clips beamline from above-below direction each other opposite across predetermined space.And, 1 couple of deflecting electrode 162a, 162b are made up of flexure plane 162a1,162a2,162a3,162b1,162b2, the 162b3 with multiple sections with the opposed inner surface of beamline, so that deflection angle becomes large gradually from the upstream side of beamline L1 towards downstream.
According to these modes, the 1 pair of deflecting electrode that uses inner surface to form by circular-arc curved surface or by the forniciform plane with multiple sections makes deflected ion beam gradually, therefore brings into play the effect of the high-energy filter that precision is higher.
Figure 21 is a side schematic diagram that represents the related final energy filter of another variation of present embodiment.
Final energy filter 210 shown in Figure 21 have ion beam for making to have scanned to 3 couples of deflecting electrode 212a, 212b, 214a, 214b, 216a and 216b of the orthogonal direction deflection in scanning direction.The 3 pairs of deflecting electrodes comprise the upper and lower asymmetrical multiple deflecting electrode that the interval between the central orbit (beamline L1) of ion beam is different.Particularly, by the interval G2 between any one and beamline L1 in the interval G1 between any one and beamline L1 in 1 couple of deflecting electrode 212a, 212b, 1 couple of deflecting electrode 214a, 214b, and in 1 couple of deflecting electrode 216a, 216b, the interval G3 between any one and beamline L1 sets different respectively intervals for.And the 1 couple of upside deflecting electrode 214a and downside deflecting electrode 214b are different shapes each other.
In addition, between method, device, system etc., the mode of combination in any, constitutive requirements of the present invention and the performance of the above constitutive requirements of phase double replacement, is also effective as mode of the present invention.

Claims (15)

1. a high energy ion injection device, it accelerates the ion beam extracting from ion source, is transferred to wafer and is injected in this wafer along beamline, and described high energy ion injection device is characterised in that to possess:
Beam generation unit, has ion source and quality analysis apparatus;
High frequency multistage linear accelerating unit, accelerates and generates high energy ion bundle described ion beam;
Deflection unit, comprises the magnetic field type energy spectrometer device that makes described high energy ion Shu Chaoxiang wafer travel direction conversion while carry out the filtration of ion with momentum;
Beam transmission line unit, is transferred to wafer by the high energy ion bundle of deflection; And
Processing substrate feed unit, is injected into the high energy ion bundle being transferred in semiconductor wafer equably,
Described beam transmission line unit has high-energy beam scanner and high-energy Electric field beam parallelizer,
And be configured to by described beam scanner and described Electric field beam parallelizer from high energy ion Shu Jinhang beam scanning out of described deflection unit and by its parallelization, thereby be injected in described wafer,
In described high energy ion injection device, between described Electric field beam parallelizer and wafer, except quality analysis apparatus described in the magnetic field type as momentum filter and energy spectrometer device, high frequency multistage linear accelerating unit as velocity filter, be also inserted with by electric field and make the high-energy scanning beam Electric field final energy filter of direction deflection up and down.
2. high energy ion injection device according to claim 1, is characterized in that,
Described final energy filter have for by the ion beam having scanned to the n of the orthogonal direction deflection in scanning direction to deflecting electrode, wherein, n is more than 1 integer,
Described n configures across interval along beamline deflecting electrode the each of deflecting electrode,
Described deflecting electrode is the plate-shaped member expanding to the direct of travel of ion beam and scanning direction, and the mode that is configured to clip beamline with every pair of deflecting electrode from above-below direction is opposite across predetermined space.
Described n is configured to deflection angle to deflecting electrode and increases gradually towards downstream from the upstream side of beamline.
3. high energy ion injection device according to claim 2, is characterized in that,
Described n is configured to the 1st mutually the same current potential to n the upside deflecting electrode that is disposed at beamline top in deflecting electrode,
Described n is configured to the 2nd mutually the same current potential to n the downside deflecting electrode that is disposed at beamline below in deflecting electrode.
4. according to the high energy ion injection device described in claim 2 or 3, it is characterized in that,
Being formed by plane with the opposed inner surface of beamline of described deflecting electrode,
Described n is configured to deflecting electrode, inner surface separately towards approximate with the track of the ion beam of deflection.
5. high energy ion injection device according to claim 3, is characterized in that,
Described n upside deflecting electrode has mutually the same shape,
Described n downside deflecting electrode has mutually the same shape.
6. high energy ion injection device according to claim 3, is characterized in that,
Described n the different multiple deflecting electrode of length that upside deflecting electrode comprises direction of beam travel.
7. high energy ion injection device according to claim 3, is characterized in that,
Described n the different multiple deflecting electrode of length that downside deflecting electrode comprises direction of beam travel.
8. high energy ion injection device according to claim 3, is characterized in that,
Described n upside deflecting electrode and/or n downside deflecting electrode comprise the upper and lower asymmetrical multiple deflecting electrode different from the interval of the central orbit of ion beam.
9. according to the high energy ion injection device described in any one in claim 2 to 8, it is characterized in that,
Described n forms by 3 pairs deflecting electrode.
10. according to the high energy ion injection device described in any one in claim 2 to 9, it is characterized in that also possessing:
Upstream side grounding electrode and downstream grounding electrode, be disposed at the beamline downstream of described final energy filter, and have opening at ion beam by region; And
Suppress electrode, be disposed between described upstream side grounding electrode and described downstream grounding electrode,
If the width of the opening of upstream side grounding electrode and length are made as to W 1and H 1, width and the length of opening that suppresses electrode is made as W 2and H 2, downstream grounding electrode width and the length of opening be made as W 3and H 3, meet W 1< W 2, W 3< W 2and H 1< H 2, H 3< H 2.
11. according to the high energy ion injection device described in any one in claim 2 to 10, it is characterized in that,
Described deflecting electrode is configured to, and at the end regions more in the outer part of the effective injection zone than can effectively carrying out the Implantation to wafer, also can make the orthogonal direction deflection in high energy ion Shu Xiangyu scanning direction having scanned.
12. high energy ion injection devices according to claim 10, is characterized in that,
Described high energy ion injection device also possesses current-flow test set, the magnitude of current that it is arranged at the downstream of described deflecting electrode and measures the ion beam while injection,
Described deflecting electrode is configured at the end regions more in the outer part of the effective injection zone than can effectively carrying out the Implantation to wafer, also can make the orthogonal direction deflection in high energy ion Shu Xiangyu scanning direction that scanned,
Described current-flow test set is disposed at the downstream of the described end regions of described deflecting electrode,
Described inhibition electrode is configured to inhibition electronics and flows out from described current-flow test set.
13. according to the high energy ion injection device described in any one in claim 2 to 12, it is characterized in that,
Described deflecting electrode is disposed at the inside of vacuum tank, and the multiple holes that are formed as being communicated with the top of beamline or the space of the below arrangement that keeps equably electric field.
14. according to the high energy ion injection device described in any one in claim 2 to 13, it is characterized in that,
Being formed by graphite with the opposed inner surface side of beamline of described deflecting electrode.
15. high energy ion injection devices according to claim 1, is characterized in that,
Described final energy filter have ion beam for making to have scanned to 1 pair of deflecting electrode of the orthogonal direction deflection in scanning direction,
Described 1 pair of deflecting electrode configures across interval one another along beamline,
Described deflecting electrode is the plate-shaped member expanding to the direct of travel of ion beam and scanning direction, and it is opposite across predetermined space to be configured to each other to clip from above-below direction the mode of beamline,
Being made up of circular-arc curved surface or the forniciform plane with multistage with the opposed inner surface of beamline of described 1 pair of deflecting electrode, so that deflection angle increases towards downstream gradually from the upstream side of beamline.
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