CN104143532B - Electronic control light valve passive light-emitting device and manufacturing technology of electronic control light valve passive light-emitting device - Google Patents
Electronic control light valve passive light-emitting device and manufacturing technology of electronic control light valve passive light-emitting device Download PDFInfo
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- CN104143532B CN104143532B CN201410345527.8A CN201410345527A CN104143532B CN 104143532 B CN104143532 B CN 104143532B CN 201410345527 A CN201410345527 A CN 201410345527A CN 104143532 B CN104143532 B CN 104143532B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
The invention discloses a manufacturing technology of an electronic control light valve passive light-emitting device. The manufacturing technology includes the following steps: (1) depositing carbon nano tube thin film or graphene thin film on a glass substrate, and conducting imaging to form an electronic control light valve layer; (2) depositing an insulating film layer on the electronic control light valve layer, and conducting imaging to expose part of the electronic control light valve layer; (3) depositing a TFT on the insulating film layer, and enabling the source electrode and the drain electrode of the TFT to be connected with the exposed part of the electronic control light valve layer in the step (2); (4) depositing a transparent insulation packing layer on the TFT, and enabling the transparent insulation packing layer to cover the TFT and the position above the portion, uncovered by the TFT, of the insulating film layer; (5) depositing a transparent public electrode on the transparent insulation packing layer; (6) manufacturing a backlight module on the transparent public electrode. The invention further discloses the electronic control light valve passive light-emitting device. The electronic control light valve passive light-emitting device has the advantages of being simple in structure, excellent in performance and convenient to manufacture.
Description
Technical field
The present invention relates to technical field of flat panel display, more particularly to a kind of automatically controlled light valve passive type luminescent device and its system
Standby technique.
Background technology
With the development of electronic technology, the miniaturization of electronic product, Intellectualized Tendency constantly strengthen.Accordingly, to flat board
The requirement of display also improves constantly.
At present, in flat display field, display screen is broadly divided into actively luminous and two big class that passively light.Actively luminous aobvious
The light-emitting component of display screen can direct outgoing pie graph picture, and passive light emitting display needs backlight and via light valve (LCD, MEMS
It is all the title of light valve) scheduling could outgoing.Active light emitting display such as organic electroluminescent OLED.Passive light emitting display is such as
LCD liquid crystal display screen, microelectromechanical systems MEMS display screen.
OLED is considered future most promising Display Technique, and in addition to the luminous characteristic of active, OLED also has height
Brightness, high efficiency, ultra-thin, achievable transparent and flexible feature.But the maximum problem of OLED is that material is afraid of water, be afraid of oxygen
Gas, packaging technology once occur careless mistake will so that device lifetime significantly cut down.Current OLED yield is trapped in relatively low always
Level, production cost remains high it is impossible to carry out commercial production application.
Passive light emitting display has the aspect advantages such as the technique of maturation and cheap cost, but passively lights and there is also
Technical limitations：, because device architecture comprises backlight, polaroid, liquid crystal cell, reflecting plate, light guide plate, filter taking LCD display as a example
The elements such as color chips, thin film transistor (TFT), and only Organic Light Emitting Diode, the OLED display screen of two kinds of main elements of thin film transistor (TFT)
Compare, the light and thin degree of LCD display is doomed limited；And after backlight passes through the element such as polaroid, liquid crystal cell, light filter, brightness is big
Width is lost, and brightness is low, inefficient；Due to the liquid crystal molecule coefficient of viscosity and temperature height correlation, therefore LCD shows at low ambient temperatures
Display screen response speed occurs problem；Additionally, the presence of liquid crystal and polaroid also can affect visible angle.
Although the appearance that MEMS shows is exactly to solve the problems, such as LCD to a certain extent.The maximum feature of MEMS is to adopt
Replace liquid crystal with miniature shutter, mean that a series of element such as polaroid, light filter is no longer necessary to simultaneously.Miniature shutter belongs to
One kind of microelectromechanical systems, possesses the fast feature of fast response time, switching speed, the introducing of MEMS, coordinates backing structure
Improvement, light and thin degree, light efficiency, angle of visibility all get a promotion, and under extremely low temperature, performance also will not weaken.But MEMS is in high speed machine
Tool motion in produced frictional force can affect efficiency, MEMS from experience external magnetic field impact larger it is most important that, with work(
Can be with the lifting of performance requirement, the control mechanism of MEMS system and driving structure also can complicate, and this can lead to cost and production
The lifting of threshold.
Therefore, not enough for prior art, provide that a kind of device architecture is simple, function admirable, preparation easily automatically controlled light
Valve passive type luminescent device and its preparation technology are to overcome prior art deficiency very necessary.
Content of the invention
It is an object of the invention to providing a kind of automatically controlled light valve passive type luminous organ in place of avoiding the deficiencies in the prior art
Part and its preparation technology, prepared automatically controlled light valve passive type luminescent device has that structure is simple, function admirable, preparation are convenient
Feature.
The above-mentioned purpose of the present invention is realized by following technological means：
A kind of preparation technology of automatically controlled light valve passive type luminescent device, is made by the steps and forms：
(1) in advance CNT or Graphene are mixed in formation base material in solid electrolyte, base material is deposited on glass
Carbon nano-tube film or graphene film are formed on glass substrate and is patterned, form automatically controlled light valve layer；
(2) depositing insulating films layer on automatically controlled light valve layer, and described insulating film layer is patterned makes partly automatically controlled light
Valve layer is exposed；
(3) deposition TFT pipe on described insulating film layer, that exposes in the source-drain electrode of described TFT pipe and step (2) is automatically controlled
Light valve layer connects；
(4) deposit transparent insulation packed layer on described TFT pipe, make transparent insulation packed layer be covered in described TFT pipe and
TFT manages above unlapped insulating film layer；
(5) transparent common electrode is deposited on described transparent insulation packed layer；
(6) backlight module is prepared on transparent common electrode.
CNT in above-mentioned steps (1) is single wall, double-walled or multi-walled carbon nano-tubes.
TFT in above-mentioned steps (3) manages as autoregistration top gate type TFT pipe, is followed successively by source-drain electrode, active from bottom to top
Layer, gate insulator and grid.
Above-mentioned TFT manages as metal-oxide TFT pipe or low temperature polycrystalline silicon TFT pipe or non-crystalline silicon tft pipe or crystallite
Silicon TFT manages.
Preferably, above-mentioned TFT manages as transparent materials, and the area of carbon nano-tube film or graphene film accounts for whole picture
Vegetarian noodles amass 40%～70%.
Another preferably above-mentioned TFT manages as transparent material, and the area of carbon nano-tube film or graphene film accounts for entirely
The 70%～95% of elemental area.
Further, in above-mentioned steps (6), the backlight module of preparation is sequential keyboard encoder structure, by reflecting layer and multilamellar backlight material
The bed of material is constituted, and above described transparent common electrode, described reflecting layer is arranged at described multilamellar backlight to multilamellar backlight material layer
Above material layer.
Above-mentioned backlight layer material is transparent material.
Insulating film layer in above-mentioned steps (2) is silicon oxide or alumina insulation film layer.
A kind of automatically controlled light valve passive type luminescent device, is prepared from by above-mentioned preparation technology.
Compared with prior art, the present invention has advantages below and beneficial effect：The present invention adopt carbon nano-tube film or
Person's graphene film is as automatically controlled light valve thin film, it is to avoid the restriction of MEMS display mechanical movement in prior art, simplifies
Device architecture, drives automatically controlled light valve so that this automatically controlled light valve passive type emitting device structure is significantly simple by simple TFT pipe
Change, be capable of the lightening of device, display effect more preferably, preparation process is simple simultaneously.
Brief description
Fig. 1 is a kind of structural representation of a pixel of automatically controlled light valve passive type luminescent device of the present invention；
Fig. 2 is a kind of another structural representation of a pixel of automatically controlled light valve passive type luminescent device of the present invention.
Specific embodiment
With reference to embodiment, the present invention is described in further detail, but embodiments of the present invention not limited to this.
Embodiment 1
A kind of automatically controlled light valve passive type luminescent device, is made up of three major parts：By carbon nano-tube film or graphite
Automatically controlled light valve layer, TFT pipe and backlight module that alkene thin film is constituted.Fig. 1 is the one of the present invention automatically controlled light valve passive type luminescent device
The structural representation of individual pixel, forms coloured image by multiple combination of pixels, and each pixel includes substrate 100, automatically controlled light valve
Layer 200, insulating film layer 300, source electrode 450, drain electrode 410, active layer 420, gate insulator 430, grid 440, insulation are filled out
Fill layer 500, common electrode 600, multilamellar backlight material layer 710, reflecting layer 720.
This automatically controlled light valve passive type luminescent device, is made by the steps and forms：
(1) in advance CNT or Graphene are mixed in formation base material in solid electrolyte, base material is deposited on glass
Carbon nano-tube film or graphene film are formed on glass substrate 100 and is patterned the automatically controlled light valve layer 200 of formation.Wherein,
CNT can be single wall, double-walled or multi-walled carbon nano-tubes, and solid electrolyte can be LiPON (LiPON) or 1- second
Base -3- Methylimidazole. two (methyl fluoride sulphonyl) acid imide or other solid electrolyte.CNT or Graphene are preferably equal
Even being mixed in solid electrolyte forms base material.
(2) depositing insulating films layer 300 on automatically controlled light valve layer 200, and insulating film layer 300 is patterned make partly electricity
Control light valve layer 200 exposes.The material of insulating film layer 300 be usually the isolation material such as silicon oxide or aluminium oxide or its
Its material.
(3) deposition TFT pipe on insulating film layer 300, TFT manages and manages for autoregistration top gate type TFT, is followed successively by source from bottom to top
Drain electrode layer (including source electrode 450, drain electrode 410), active layer 420, gate insulator 430 and grid 440.The source of TFT pipe
Drain electrode is connected with the automatically controlled light valve layer 200 exposing in step (2), and such TFT pipe can apply electricity to automatically controlled light valve layer film
Pressure, but obstructed electric current.
It should be noted that TFT pipe is known in the art technology, constitute its source-drain electrode layer, active layer, gate insulator
It is also general knowledge known in this field with the material of grid and preparation technology.In practice, can flexibly select according to specific needs,
This repeats no more.
(4) deposit transparent insulation packed layer 500 on TFT pipe, make transparent insulation packed layer 500 be covered in TFT pipe and TFT
Manage above unlapped insulating film layer 300.
Transparent insulation packed layer 500 can be optionally inorganic for organic and inorganic transparent optical material, transparent insulation material
Thing such as silicon oxide (SiOx), silicon nitride (SiNx), aluminium oxide (Al2O3) etc., optional Organic substance such as transparent photomask glue etc..
(5) transparent common electrode 600 is deposited on transparent insulation packed layer 500.Common electrode 600 is usually ITO, IZO
Or the transparency electrodes such as AZO, transparency electrode can be by Ag films, Graphene, indium tin oxide, indium-zinc oxide or indium gallium zinc
The materials such as oxide are prepared from
(6) prepare backlight module on transparent common electrode 600.
Preferably backlight module is sequential keyboard encoder structure, is made up of transparent multilamellar backlight material layer 710 and reflecting layer 720, many
Above described transparent common electrode 600, reflecting layer 720 is arranged in multilamellar backlight material layer 710 layer backlight material layer 710
Side.
Using sequential keyboard encoder backlight, driving backboard can be simplified, and pixel can be done further little, only need to be driven by rational
Dynamic algorithm can be achieved with good display effect.Sequential keyboard encoder backlight is industry prior art, will not be described here.Additionally, sequential
The optional redgreenblue of formula backlight, also can add white or other color backlight.Backlight device can be LED.
The light of this automatically controlled light valve passive type luminescent device backlight module transmitting, through direct projection or reflection, through transparent public
Project after electrode 600 and transparent insulation packed layer 500, automatically controlled light valve layer 200, glass substrate 100, there is light light transmittance high
Feature.
Carbon nano-tube film or graphene film is adopted as automatically controlled light valve in the present invention, it can be avoided that in prior art
The restriction of MEMS display mechanical movement, thus realize simplifying the purpose of device architecture.The principle of the present invention is：Work as CNT
When thin film or graphene film are applied in negative voltage, the depleted of electrons of van hove singularity, and this van hove singularity and light penetrate
The absorption spectrum S1 electron transition of carbon nano-tube film or graphene film is related.Therefore, when applying with negative voltage, thin film pair
Light transmittance in relevant wavelength section increases.The technical program is exactly this spy using carbon nano-tube film or graphene film
Property is improving the light transmittance of device.Experiment finds, technical scheme can significantly improve the light transmittance of light.
, can drive in simple TFT pipe as automatically controlled light valve due to using carbon nano-tube film or graphene film
Under i.e. can achieve automatically controlled light valve function so that device architecture substantially simplifies.
Because device architecture simplifies, therefore it is lightening further to enable to this luminescent device.By then passing through itself printing opacity
The change of rate and in MEMS display non-shutter folding, carbon nano-tube film or graphene film energy display effect are more preferably
GTG control.
And carbon nano-tube film or graphene film can support flexibility, cooperation oxide TFT and optimization well
Sequential keyboard encoder drives back board structure it is easier to realize Flexible Displays.
Additionally, carbon nano-tube film or graphene film belong to environment-friendly materials, environmental pollution, the therefore suitability are more
By force.
The present invention also has preparation process is simple, the cheap feature of preparation cost.
It should be noted that the TFT pipe of deposition can be metal-oxide TFT pipe or low temperature polycrystalline silicon in step (3)
TFT pipe or non-crystalline silicon tft pipe or microcrystal silicon TFT pipe.Optimal with metal-oxide TFT pipe, there is function admirable, low cost
Honest and clean feature.
Embodiment 2
A kind of preparation technology of automatically controlled light valve passive type luminescent device, other structures are same as Example 1, and difference exists
In also having following technical characteristic：TFT manages as transparent materials, and the area of carbon nano-tube film or graphene film accounts for entirely
The 40%～70% of elemental area.Device has good aperture opening ratio, can improve the percent of pass of light.
Embodiment 3
A kind of automatically controlled light valve passive type luminescent device, other structures are same as Example 1, difference be also to have as
Lower technical characteristic：TFT manages as transparent material, and the area of carbon nano-tube film or graphene film accounts for whole elemental area
70%～95%, can further improve the aperture opening ratio of device, improve the percent of pass of light.The structural representation of one pixel is such as
Shown in Fig. 2, each pixel includes substrate 101, automatically controlled light valve layer 201, insulating film layer 301, source electrode 451, drain electrode 411, has
Active layer 421, gate insulator 431, grid 441, insulation fill stratum 501, common electrode 601, multilamellar backlight material layer 711, anti-
Penetrate layer 721.
Embodiment 4
A kind of automatically controlled light valve passive type luminescent device, other structures are same as Example 3, and difference is, its backlight
The backlight material of module adopts red, green, blue trichroism, has the characteristics that process is simple.
It should be noted that sequential keyboard encoder backlight module be not limited to redgreenblue it is also possible to add white light or other
Color backlight.
Embodiment 5
In order to verify the performance of the automatically controlled light valve passive type luminescent device of present invention preparation further, prepare following structure
Automatically controlled light valve passive type luminescent device I.
The constituent material of device I and thickness are as follows：
Substrate is the glass of 4mm thickness；
Using SWCN hybrid solid electrolyte 1- ethyl-3-methylimidazole two (methyl fluoride sulphonyl) acid imide as
Material prepares the thin film of 50nm as automatically controlled light valve layer；
Prepare the insulating film layer of 200nm thickness using silicon oxide as material；
Using the monolayer Copper thin film of 100nm thickness as source-drain electrode；
Using indium-zinc oxide doping lanthanide oxide as active layer, thickness 100nm；
Using the silicon oxide film of 150nm thickness as gate insulator；
With the monolayer Copper thin film of 200nm thickness as grid；
Insulation fill stratum is the aluminum oxide film of thickness 3mm；
Common electrode is 200nm indium tin oxide；
Multilamellar backlight material layer is formed by stacking for redgreenblue LED；
Reflecting layer is the silver alloy of 1mm thickness.
The automatically controlled light valve layer of device I accounts for whole elemental area 70%, and this device is directed to 550nm wavelength (green glow) light transmittance about
For 33%, light transmittance herein refers to the brightness after device glass substrate outgoing of light that pixel sent and initial pixel light emission
The ratio of brightness.Because device I adopts transparent TFT, coordinates simply automatically controlled light valve structure and great aperture opening ratio, device I's
Light transmittance is far above liquid crystal display (IPS pattern about 7%～10%), top emitting OLED display device in the prior art that can match in excellence or beauty
(light transmittance of current top emitting OLED display device reaches as high as 30%～35% or higher).
It should be noted that the material of source-drain electrode can also select aluminium film, molybdenum film or titanium film etc..
It should be noted that the material of active layer also optional metal-oxide (In2O3) x (MO) y (ZnO) z, wherein 0≤x
≤ 1,0≤y≤1,0≤z≤1, and x+y+z=1, M is gallium, stannum, silicon, aluminum, magnesium, tantalum, hafnium, ytterbium, nickel, zirconium or lanthanide series rare-earth elements
One of or two or more combination in any.
It should be noted that the also optional monolayer aluminium film of the material of grid 440, molybdenum film, titanium film, Ag films, gold are thin
Film, tantalum films, W film, chromium thin film or aluminum alloy films.
Embodiment 6
In order to verify the performance of the automatically controlled light valve passive type luminescent device of present invention preparation further, prepare following structure
Automatically controlled light valve passive type luminescent device II.
The material of device II is constituted and thickness is specific as follows：
Substrate is the glassy layer of thickness 4mm；
Automatically controlled light valve layer is double-walled carbon nano-tube mixing LiPON (LiPON) solid electrolyte film of 50nm thickness；
Insulating film layer is the silicon oxide film of 200nm thickness；
Source-drain electrode is the monolayer Copper thin film of 100nm；
Active layer is the indium-zinc oxide doping group of the lanthanides sull of thickness 100nm；
Gate insulator is the silicon oxide of thickness 150nm；
Grid is the monolayer Copper thin film of 200nm；
Insulation fill stratum is the alumina layer of thickness 3mm；
Common electrode is the indium tin oxide of thickness 200nm；
Multilamellar backlight material layer is formed by stacking for redgreenblue LED；
Reflecting layer is the silver alloy of 1mm thickness.
The automatically controlled light valve layer of device II accounts for whole elemental area 70%, and this device is directed to 550nm wavelength (green glow) light transmittance
It is about 36%.Because device II adopts transparent TFT, coordinates simply automatically controlled light valve structure and great aperture opening ratio, device II's
Light transmittance is far above liquid crystal display (IPS pattern about 7%～10%), top emitting OLED display device in the prior art that can match in excellence or beauty
(light transmittance of current top emitting OLED display device reaches as high as 30%～35% or higher).
Embodiment 7
In order to verify the performance of the automatically controlled light valve passive type luminescent device of present invention preparation further, prepare following structure
Automatically controlled light valve passive type luminescent device III.
The constituent material of device III and thickness are specific as follows：
Substrate is the glass substrate of thickness 4mm；
Automatically controlled light valve layer is double-walled carbon nano-tube mixing LiPON (LiPON) solid electrolyte film of thickness 50nm；
Insulating film layer is the silicon oxide film of thickness 200nm；
Source-drain electrode is the monolayer Copper thin film of thickness 100nm；
Active layer is the indium-zinc oxide doping group of the lanthanides sull of thickness 100nm；
Gate insulator is the silicon oxide film of thickness 150nm；
Grid is the monolayer Copper thin film of thickness 200nm；
Insulation fill stratum is the aluminum oxide film of thickness 3mm；
Common electrode is the indium tin oxide of thickness 200nm；
Multilamellar backlight material layer is formed by stacking for redgreenblue LED；
Reflecting layer is the silver alloy of 1mm thickness.
The automatically controlled light valve layer of device III accounts for whole elemental area 90%, and this device is directed to 550nm wavelength (green glow) light transmittance
It is about 46%.Because device III adopts transparent TFT, coordinates simply automatically controlled light valve structure and great aperture opening ratio, device III
Light transmittance be far above liquid crystal display (IPS pattern about 7%～10%), top emitting OLED display in the prior art that can match in excellence or beauty
Part (light transmittance of current top emitting OLED display device reaches as high as 30%～35% or higher).
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not subject to described embodiment
Limit, other any spirit without departing from the present invention and the change made under principle, modification, replacement, combine, simplify,
All should be equivalent substitute mode, be included within protection scope of the present invention.
Claims (10)
1. a kind of preparation technology of automatically controlled light valve passive type luminescent device forms it is characterised in that being made by the steps：
(1) in advance CNT or Graphene are mixed in formation base material in solid electrolyte, base material is deposited on glass lined
Carbon nano-tube film or graphene film are formed on bottom and is patterned, form automatically controlled light valve layer；
(2) depositing insulating films layer on automatically controlled light valve layer, and described insulating film layer is patterned makes partly automatically controlled light valve layer
Expose；
(3) deposition TFT pipe, the automatically controlled light valve exposing in the source-drain electrode of described TFT pipe and step (2) on described insulating film layer
Layer connects；
(4) deposit transparent insulation packed layer on described TFT pipe, make transparent insulation packed layer be covered in described TFT pipe and TFT pipe
Above unlapped insulating film layer；
(5) transparent common electrode is deposited on described transparent insulation packed layer；
(6) backlight module is prepared on transparent common electrode.
2. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 1 is it is characterised in that step (1)
Described in CNT be single wall, double-walled or multi-walled carbon nano-tubes.
3. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 1 is it is characterised in that step (3)
Described in TFT manage for autoregistration top gate type TFT pipe, be followed successively by from bottom to top source-drain electrode layer, active layer, gate insulator and
Grid.
4. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 3 is it is characterised in that described TFT
Manage as metal-oxide TFT pipe or low temperature polycrystalline silicon TFT pipe or non-crystalline silicon tft pipe or microcrystal silicon TFT pipe.
5. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 4 is it is characterised in that described TFT
Manage as transparent materials, the area of carbon nano-tube film or graphene film accounts for the 40%～70% of whole elemental area.
6. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 4 is it is characterised in that described TFT
Manage as transparent material, the area of carbon nano-tube film or graphene film accounts for the 70%～95% of whole elemental area.
7. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 1 is it is characterised in that step (6)
The backlight module of middle preparation be sequential keyboard encoder structure, be made up of reflecting layer and multilamellar backlight material layer, multilamellar backlight material layer located at
Above described transparent common electrode, described reflecting layer is arranged above described multilamellar backlight material layer.
8. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 7 is it is characterised in that described backlight
Material layer is transparent material.
9. the preparation technology of automatically controlled light valve passive type luminescent device according to claim 7 is it is characterised in that described step
(2) insulating film layer in is silicon oxide or alumina insulation film layer.
10. a kind of automatically controlled light valve passive type luminescent device is it is characterised in that preparation work described in any one of claim 1～9
Skill is prepared from.
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| CN201410345527.8A CN104143532B (en) | 2014-07-18 | 2014-07-18 | Electronic control light valve passive light-emitting device and manufacturing technology of electronic control light valve passive light-emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5737050A (en) * | 1992-08-25 | 1998-04-07 | Matsushita Electric Industrial Co., Ltd. | Light valve having reduced reflected light, high brightness and high contrast |
| CN102236164A (en) * | 2011-04-18 | 2011-11-09 | 上海丽恒光微电子科技有限公司 | Display device based on micro-electromechanical system (MEMS) light valve and forming method thereof |
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| KR101532312B1 (en) * | 2012-01-19 | 2015-06-29 | 삼성전자주식회사 | Logic device using graphene and methods of manufacturing and operating the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5737050A (en) * | 1992-08-25 | 1998-04-07 | Matsushita Electric Industrial Co., Ltd. | Light valve having reduced reflected light, high brightness and high contrast |
| CN102236164A (en) * | 2011-04-18 | 2011-11-09 | 上海丽恒光微电子科技有限公司 | Display device based on micro-electromechanical system (MEMS) light valve and forming method thereof |
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