CN104124366A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
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- CN104124366A CN104124366A CN201310143952.4A CN201310143952A CN104124366A CN 104124366 A CN104124366 A CN 104124366A CN 201310143952 A CN201310143952 A CN 201310143952A CN 104124366 A CN104124366 A CN 104124366A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
Abstract
The invention provides an organic light-emitting device comprising a conductive anode substrate, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a composite cathode layer. The above-mentioned layers are successively laminated. The composite cathode layer includes a doping layer and a metal layer, wherein the layers are successively laminated; the doping layer is made of a mixing material formed by metallic oxide doped with titanium dioxide, wherein the metallic oxide can be molybdenum trioxide, tungsten trioxide, rhenium oxide or copper oxide; and the metal layer is made of silver, aluminum, platinum or gold. Because of the composite cathode layer, the light can be scattered, thereby improving the luminous efficiency of the device. In addition, the invention also provides a preparation method of the organic light-emitting device.
Description
Technical field
The present invention relates to organic electroluminescence device, be specifically related to a kind of organic electroluminescence device and preparation method thereof.
Background technology
1987, the C.W.Tang of U.S. Eastman Kodak company and VanSlyke reported the breakthrough in organic electroluminescent research.Utilize ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000cd/m
2, its luminous efficiency is 1.51lm/W, life-span to be greater than 100 hours.
In traditional luminescent device, it is to be transmitted into device outside that the light of device inside only has 18% left and right, and other part can consume at device outside with other forms, this be due between interface, there is refractive index poor (as the specific refractivity between glass and ITO, glass refraction is that 1.5, ITO is 1.8, light arrives glass from ITO, will there is total reflection), caused the loss of total reflection, thereby it is lower to cause the integral body of luminescent device to go out optical property.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides a kind of organic electroluminescence device and preparation method thereof.By prepare composite cathode layer on electron injecting layer, improved the luminous efficiency of organic electroluminescence device.
On the one hand, the invention provides a kind of organic electroluminescence device, comprise the conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the composite cathode layer that stack gradually, described composite cathode layer comprises doped layer and the metal level that lamination arranges successively, the material of described doped layer is the composite material that doped metallic oxide titanium dioxide forms, described metal oxide is molybdenum trioxide, tungstic acid, rheium oxide or cupric oxide, and the material of described metal level is silver, aluminium, platinum or gold.
Preferably, in described doped layer, the mass ratio of described titanium dioxide and metal oxide is 0.1～1:1.
Preferably, the thickness of described doped layer is 30～200nm.
Preferably, the thickness of described metal level is 100～300nm.
Preferably, the particle diameter of described titanium dioxide is 20～200nm.
Composite cathode layer comprises doped layer and the metal level that lamination arranges successively.The doped layer of preparing layer of metal oxide and titanium dioxide on electron injecting layer, due to metal oxide and titanium dioxide granule larger, be conducive to form ripple struction, can make film surface is no longer even curface, but is with effigurate nutty structure, and this structure can change the refraction angle of light, make light carry out scattering, minimizing, to the light of device both sides transmitting, can make the functional layer that rear preparation is got on also can keep nutty structure simultaneously always, is conducive to light scattering; On this doped layer, preparing layer of metal layer, is mainly to make the light of scattering reflect back into bottom outgoing, improves light extraction efficiency, and meanwhile, the conductivity of enhance device, reduces contact resistance, thereby finally improve luminous efficiency.
Conductive anode substrate can be conducting glass substrate or organic PETG substrate that conducts electricity.Preferably, conductive anode substrate is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO).More preferably, conductive anode substrate is indium tin oxide glass.
The material of hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer is not done concrete restriction, and this area current material is all applicable to the present invention.
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5), the thickness of hole injection layer is 20～80nm.
More preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), thickness is 40nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20～60nm.
More preferably, the material of hole transmission layer is N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine (NPB), thickness is 50nm.
Preferably, the luminescent material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq
3), thickness is 5～40nm.
More preferably, the luminescent material of luminescent layer is two (the 9-ethyl-3-carbazole vinyl)-1 of 4,4'-, 1'-biphenyl (BCzVBi), and thickness is 30nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), thickness is 40～300nm.
More preferably, the material of electron transfer layer is N-aryl benzimidazole (TPBI), and thickness is 200nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); Thickness is 0.5～10nm.
More preferably, the material of electron injecting layer is lithium fluoride (LiF), and thickness is 1nm.
On the other hand, the invention provides a kind of preparation method of organic electroluminescence device, comprise the following steps:
On conductive anode substrate, prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
On described electron injecting layer, prepare composite cathode layer: first by the mode of electron beam evaporation plating, on described electron injecting layer, prepare successively doped layer, then on described doped layer, prepare metal level by the mode of vacuum evaporation, obtain organic electroluminescence device;
The material of described doped layer is the composite material that doped metallic oxide titanium dioxide forms, and described metal oxide is molybdenum trioxide (MoO
3), tungstic acid (WO
3), rheium oxide (ReO
3) or cupric oxide (CuO), the material of described metal level is silver, aluminium, platinum or gold;
The energy density of described electron beam evaporation plating is 10～l00W/cm
2, the material evaporation speed of described doped layer is 0.1～1nm/s, in described vacuum evaporation process, vacuum degree is 2 * 10
-3～5 * 10
-5pa, described metal layer material evaporation speed is 1～10nm/s.
Preferably, in described doped layer, the mass ratio of described titanium dioxide and metal oxide is 0.1～1:1.
Preferably, the particle diameter of described titanium dioxide is 20～200nm.
Preferably, the thickness of described doped layer is 30～200nm.
Preferably, the thickness of described metal level is 100～300nm.
Conductive anode substrate can be conducting glass substrate or organic PETG substrate that conducts electricity.Preferably, conductive anode substrate is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO).More preferably, conductive anode substrate is indium tin oxide glass.
Preferably, anode substrate is carried out to following clean: adopt successively liquid detergent, each ultrasonic cleaning of deionized water 15 minutes, and then stand-by by oven for drying.
The material of hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer is not done concrete restriction, and this area current material is all applicable to the present invention.Hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer all can adopt the mode of vacuum evaporation to prepare, and its concrete operations condition is not made particular determination.
Preferably, the temperature of vacuum evaporation is 100～500 ℃, and vacuum degree is 1 * 10
-3～1 * 10
-5pa.
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5), the thickness of hole injection layer is 20～80nm.
More preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), thickness is 40nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20～60nm.
More preferably, the material of hole transmission layer is N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine (NPB), thickness is 50nm.
Preferably, the luminescent material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq
3), thickness is 5～40nm.
More preferably, the luminescent material of luminescent layer is two (the 9-ethyl-3-carbazole vinyl)-1 of 4,4'-, 1'-biphenyl (BCzVBi), and thickness is 30nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), thickness is 40～300nm.
More preferably, the material of electron transfer layer is N-aryl benzimidazole (TPBI), and thickness is 220nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); Thickness is 0.5～10nm.
More preferably, the material of electron injecting layer is lithium fluoride (LiF), and thickness is 1nm.
The invention provides a kind of organic electroluminescence device and preparation method thereof and there is following beneficial effect:
(1) organic electroluminescence device provided by the invention, there is composite cathode layer structure, composite cathode layer comprises doped layer and the metal level that lamination arranges successively, material metal oxide and the titanium dioxide granule of doped layer are larger, can make film surface form and be with effigurate nutty structure, this structure can change the refraction angle of light, makes light carry out scattering, can make the functional layer that rear preparation is got on also can keep nutty structure, be conducive to light scattering simultaneously; Metal level is mainly to make the light of scattering reflect back into bottom outgoing, improves light extraction efficiency, and meanwhile, the conductivity of enhance device, reduces contact resistance, finally improves luminous efficiency;
(2) preparation technology of organic electroluminescence device of the present invention is simple, and easily large area preparation is suitable for large-scale industrialization and uses.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device that makes of the embodiment of the present invention 1;
Fig. 2 is the current density of organic electroluminescence device and the graph of a relation of current efficiency prepared by the embodiment of the present invention 1 and comparative example.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on ito glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is WO
3, thickness is 40nm; The material of hole transmission layer is NPB, and thickness is 50nm; The material of luminescent layer is BCzVBi, and light emitting layer thickness is 30nm; The material of electron transfer layer is TPBI, and thickness is 200nm; The material of electron injecting layer is LiF, and thickness is 1nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises doped layer and the metal level stacking gradually;
The preparation of composite cathode layer: first adopt the mode of electron beam evaporation plating to prepare the doped layer that a layer thickness is 100nm on electron injecting layer, material is TiO
2with MoO
3the composite material forming (is expressed as TiO
2: MoO
3), TiO
2with MoO
3mass ratio be 0.5:1, TiO
2particle diameter is 100nm, and evaporation speed is 3nm/s, and the energy density of electron beam evaporation plating is 30W/cm
2; Adopt the mode of vacuum evaporation on doped layer, to prepare the metal level that a layer thickness is 200nm, material is silver (Ag) again, and evaporation speed is 3nm/s, and the vacuum degree of vacuum evaporation process is 8 * 10
-5pa.
Fig. 1 is the structural representation of the organic electroluminescence device that makes of the embodiment of the present invention 1.As shown in Figure 1, the present embodiment organic electroluminescence device, comprises ito glass substrate 1, hole injection layer 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, electron injecting layer 6 and composite cathode layer 7 successively.Described composite cathode layer 7 comprises that a layer thickness is the doped layer 71 of 100nm and the metal level 72 that a layer thickness is 200nm successively.The structure of this organic electroluminescence device is: ito glass/WO
3/ TCTA/BCzVBi/TPBi/LiF/TiO
2: MoO
3(0.5:1)/Ag, wherein, slash "/" represents layer structure, TiO
2: MoO
3in colon ": " represent to mix, 0.5:1 represents the former and the latter's mass ratio, after in embodiment each meaning that meets expression identical.
Embodiment 2
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on AZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is WO
3, thickness is 80nm; The material of hole transmission layer is TCTA, and thickness is 60nm; The material of luminescent layer is ADN, and thickness is 5nm; The material of electron transfer layer is TAZ, and thickness is 200nm; The material of electron injecting layer is CsN
3, thickness is 10nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises doped layer and the metal level stacking gradually;
The preparation of composite cathode layer: first adopt the mode of electron beam evaporation plating to prepare the doped layer that a layer thickness is 100nm on electron injecting layer, material is TiO
2with WO
3the composite material forming (is expressed as TiO
2: WO
3), TiO
2with WO
3mass ratio be 1:1, TiO
2particle diameter is 20nm, and evaporation speed is 10nm/s, and the energy density of electron beam evaporation plating is 10W/cm
2; Adopt the mode of vacuum evaporation on doped layer, to prepare the metal level that a layer thickness is 100nm, material is aluminium (Al) again, and evaporation speed is 10nm/s, and the vacuum degree of vacuum evaporation process is 2 * 10
-3pa.
The structure of the organic electroluminescence device that the present embodiment provides is: AZO glass/WO
3/ TCTA/ADN/TAZ/CsN
3/ TiO
2: WO
3(1:1)/Al.
Embodiment 3
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on IZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is V
2o
5, thickness is 20nm; The material of hole transmission layer is TCTA, and thickness is 30nm; The material of luminescent layer is Alq
3, thickness is 40nm; The material of electron transfer layer is Bphen, and thickness is 60nm; The material of electron injecting layer is CsF, and thickness is 0.5nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises doped layer and the metal level stacking gradually;
The preparation of composite cathode layer: first adopt the mode of electron beam evaporation plating to prepare the doped layer that a layer thickness is 30nm on electron injecting layer, material is TiO
2with ReO
3the composite material forming (is expressed as TiO
2: ReO
3), TiO
2with ReO
3mass ratio be 0.1:1, TiO
2particle diameter is 200nm, and evaporation speed is 1nm/s, and the energy density of electron beam evaporation plating is 100W/cm
2; Adopt the mode of vacuum evaporation on doped layer, to prepare the metal level that a layer thickness is 300nm, material is Pt again, and evaporation speed is 1nm/s, and the vacuum degree of vacuum evaporation process is 5 * 10
-5pa.
The structure of the organic electroluminescence device that the present embodiment provides is: IZO glass/V
2o
5/ TCTA/Alq
3/ Bphen/CsF/TiO
2: ReO
3(0.1:1)/Pt.
Embodiment 4
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on IZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is MoO
3, thickness is 30nm; The material of hole transmission layer is TAPC, and thickness is 50nm; The material of luminescent layer is DCJTB, and thickness is 5nm; The material of electron transfer layer is TPBi, and thickness is 40nm; The material of electron injecting layer is Cs
2cO
3, thickness is 1nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises doped layer and the metal level stacking gradually;
The preparation of composite cathode layer: first adopt the mode of electron beam evaporation plating to prepare the doped layer that a layer thickness is 150nm on electron injecting layer, material is TiO
2the composite material forming with CuO (is expressed as TiO
2: CuO), TiO
2with the mass ratio of CuO be 0.3:1, TiO
2particle diameter is 50nm, and evaporation speed is 5nm/s, and the energy density of electron beam evaporation plating is 80W/cm
2; Adopt the mode of vacuum evaporation on doped layer, to prepare the metal level that a layer thickness is 250nm, material is Au again, and evaporation speed is 5nm/s, and the vacuum degree of vacuum evaporation process is 5 * 10
-4pa.
The structure of the organic electroluminescence device that the present embodiment provides is: IZO glass/MoO
3/ TAPC/DCJTB/TPBi/Cs
2cO
3/ TiO
2: CuO(0.3:1)/Au.
Comparative example
For embodying creativeness of the present invention, the present invention is also provided with comparative example, the difference of comparative example and embodiment 1 is that the negative electrode in comparative example is metal simple-substance silver (Ag), and thickness is 150nm, and the concrete structure of comparative example's organic electroluminescence device is ito glass/WO
3/ TCTA/BCzVBi/TPBi/LiF/Ag, respectively corresponding conductive anode substrate of glass, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode.
Adopt the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the current-voltage tester Keithley2400 test electric property of U.S. Keithley company, CS-100A colorimeter test brightness and the colourity of Japan Konica Minolta company, obtain organic electroluminescence device current efficiency with current density change curve, to investigate the luminous efficiency of device, tested object is organic electroluminescence device prepared by embodiment 1 and comparative example.Test result as shown in Figure 2.
Fig. 2 is the current density of organic electroluminescence device and the graph of a relation of current efficiency prepared by embodiment 1 and comparative example.Wherein, curve 1 is the current density of organic electroluminescence device and the graph of a relation of current efficiency of embodiment 1 preparation; The current density of organic electroluminescence device and the graph of a relation of current efficiency that curve 2 is prepared for comparative example.As can see from Figure 2, under different current densities, the organic electroluminescence device that the current efficiency of the organic electroluminescence device of embodiment 1 preparation is all prepared than comparative example large, the maximum current efficiency of the organic electroluminescence device of embodiment 1 preparation is 10.64cd/A, and that comparative example is only 5.73cd/A.This explanation, the composite cathode layer structure of the organic electroluminescence device of embodiment 1 preparation, the metal oxide particle of doped layer is large, surface has been formed and be with effigurate nutty structure, changed the refraction angle of light, reduced to the light of both sides transmitting, make functional layer prepared by rear evaporation also keep wave structure simultaneously, be conducive to light scattering, metal level makes the light of scattering further reflect back into bottom outgoing, has improved light extraction efficiency, simultaneously, metal level can also enhance device conductivity, reduce contact resistance.Thereby finally improve the luminous efficiency of device.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, comprise the conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the composite cathode layer that stack gradually, it is characterized in that, described composite cathode layer comprises doped layer and the metal level that lamination arranges successively
The material of described doped layer is the composite material that doped metallic oxide titanium dioxide forms, and described metal oxide is molybdenum trioxide, tungstic acid, rheium oxide or cupric oxide, and the material of described metal level is silver, aluminium, platinum or gold.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, in described doped layer, the mass ratio of described titanium dioxide and metal oxide is 0.1～1:1.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described doped layer is 30～200nm.
4. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described metal level is 100～300nm.
5. organic electroluminescence device as claimed in claim 1, is characterized in that, the particle diameter of described titanium dioxide is 20～200nm.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
On conductive anode substrate, prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
On described electron injecting layer, prepare composite cathode layer: first by the mode of electron beam evaporation plating, on described electron injecting layer, prepare successively doped layer, then on described doped layer, prepare metal level by the mode of vacuum evaporation, obtain organic electroluminescence device;
The material of described doped layer is the composite material that doped metallic oxide titanium dioxide forms, and described metal oxide is molybdenum trioxide, tungstic acid, rheium oxide or cupric oxide, and the material of described metal level is silver, aluminium, platinum or gold;
The energy density of described electron beam evaporation plating is 10～l00W/cm
2, in described vacuum evaporation process, vacuum degree is 2 * 10
-3～5 * 10
-5pa, the material evaporation speed of described doped layer and metal level is 1～10nm/s.
7. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, in described doped layer, the mass ratio of described titanium dioxide and metal oxide is 0.1～1:1.
8. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the particle diameter of described titanium dioxide is 20～200nm.
9. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness of described doped layer is 30～200nm.
10. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness of described metal level is 100～300nm.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4720432A (en) * | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
| CN1625923A (en) * | 2002-04-05 | 2005-06-08 | 施乐公司 | Display devices with organic-metal mixed layer |
| CN1792120A (en) * | 2003-05-20 | 2006-06-21 | 出光兴产株式会社 | Organic electroluminescent element and display device |
| CN1961613A (en) * | 2004-03-26 | 2007-05-09 | 松下电工株式会社 | Organic light emitting element |
| CN102569663A (en) * | 2010-12-16 | 2012-07-11 | 财团法人工业技术研究院 | Stacked electrode and photoelectric element |
| CN102956837A (en) * | 2011-08-26 | 2013-03-06 | 三菱综合材料株式会社 | Organic electroluminescence component and manufacturing method thereof |
-
2013
- 2013-04-24 CN CN201310143952.4A patent/CN104124366A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4720432A (en) * | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
| CN1625923A (en) * | 2002-04-05 | 2005-06-08 | 施乐公司 | Display devices with organic-metal mixed layer |
| CN1792120A (en) * | 2003-05-20 | 2006-06-21 | 出光兴产株式会社 | Organic electroluminescent element and display device |
| CN1961613A (en) * | 2004-03-26 | 2007-05-09 | 松下电工株式会社 | Organic light emitting element |
| CN102569663A (en) * | 2010-12-16 | 2012-07-11 | 财团法人工业技术研究院 | Stacked electrode and photoelectric element |
| CN102956837A (en) * | 2011-08-26 | 2013-03-06 | 三菱综合材料株式会社 | Organic electroluminescence component and manufacturing method thereof |
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Application publication date: 20141029 |