CN104051563A - Preparation method of solar cell - Google Patents
Preparation method of solar cell Download PDFInfo
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- CN104051563A CN104051563A CN201310081637.3A CN201310081637A CN104051563A CN 104051563 A CN104051563 A CN 104051563A CN 201310081637 A CN201310081637 A CN 201310081637A CN 104051563 A CN104051563 A CN 104051563A
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- silicon chip
- solar cell
- preparation
- silicon
- silicon wafer
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 117
- 239000010703 silicon Substances 0.000 claims abstract description 117
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 114
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000005498 polishing Methods 0.000 claims abstract description 28
- 238000004381 surface treatment Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 40
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 38
- 239000012530 fluid Substances 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- 239000000243 solution Substances 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 238000005530 etching Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- 229910020479 SiO2+6HF Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- -1 hexafluorosilicic acid Chemical compound 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention, which relates to the manufacturing field of the solar cell, provides a preparation method of a solar cell. With the method, a problem that the conversion efficiency of the solar cell is reduced because the mechanical damage layer is not removed when single-surface texturing is carried out on the silicon wafer according to the existing method can be solved. The preparation method comprises the following steps: (1), forming a protection film at the right surface of a silicon wafer; (2), carrying out surface treatment on the silicon wafer that has been processed at the step (1) by using a polishing solution, enabling the back surface of the silicon wafer and the polishing solution to make reaction, and removing a mechanical damage layer and forming a flat surface; (3), carrying out surface treatment on the silicon wafer that has been processed in the step (2) by using a treating solution, thereby removing the protection film at the right surface of the silicon wafer; and (4), carrying out surface texturing process on the silicon wafer that has been processed in the step (3), thereby forming the texturing surface at the right side of the silicon wafer.
Description
Technical field
The present invention relates to solar cell and manufacture field, relate in particular to the preparation method of solar cell.
Background technology
In recent years, along with the continuous intensification of people to polycrystalline silicon material understanding, processing to polycrystalline silicon material and battery process have been done a large amount of improvement, thereby the conversion efficiency that makes polysilicon solar cell has obtained improving rapidly, and then makes polysilicon solar cell application in daily life more and more extensive.
At present, the technological process of production of polysilicon solar cell is: cleaning and texturing, diffusion, etching, PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition), silk screen printing and sintering.Wherein, cleaning and texturing technique adopts the mixed solution of HF (hydrofluoric acid) and HNO3 (nitric acid) to process silicon chip surface more, to remove the mechanical damage layer of silicon chip surface, on two surfaces, form etch pit up and down, i.e. matte at silicon chip simultaneously.Incident illumination on the matte of front side of silicon wafer time, can pass through multiple reflections, thereby can reach the object that increases light absorption.But, because silicon chip back side also has matte, in the time that incident light enters silicon chip inside and reaches the back side, also easily form multiple reflections, cause having the easy transmission loss of more long-wave band light.
In order to reduce optical transmission loss, prior art has proposed a kind of method that only forms matte at front side of silicon wafer.First the method forms silicon nitride film at the back side of silicon chip; Then adopt low concentration (being generally 1% left and right) alkali lye to process silicon chip surface, due to silicon nitride not with alkaline reaction, therefore can protect the back side of silicon chip, and positive with alkaline reaction to form matte; Finally adopt HF to remove silicon nitride film, because HF does not react with silicon body, therefore can ensure that positive established matte is unaffected.
After using said method that the silicon nitride film of silicon chip back side is removed, the silicon chip back side exposing keeps original appearance, because mechanical damage layer was not removed in this back side before covering silicon nitride film, therefore, silicon chip back side still retains this mechanical damage layer, this silicon chip is made after solar cell, because the existence of mechanical damage layer can cause having more compound, and then cause the reduction of minority carrier life time and the decline of electric current, finally make the conversion efficiency of solar cell reduce.
Summary of the invention
Embodiments of the invention provide a kind of preparation method of solar cell, have solved and have adopted existing method when silicon chip is carried out to one texture-etching side, due to the problem of not removing conversion efficiency of solar cell that mechanical damage layer causes and reducing.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A preparation method for solar cell, comprising: (1), form diaphragm in the front of silicon chip; (2), adopt polishing fluid to carry out surface treatment to the described silicon chip that completes described step (1) so that the back side of described silicon chip reacts with described polishing fluid, removal mechanical damage layer also forms flat surfaces; (3), adopt treatment fluid to carry out surface treatment to the described silicon chip that completes described step (2), to remove the described diaphragm of described front side of silicon wafer; (4), the described silicon chip that completes described step (3) is carried out to surface wool manufacturing technique, with the front formation matte at described silicon chip.
Further, described step (4) specifically comprises: the mixed solution of putting into hydrofluoric acid and nitric acid in reactive tank; The described silicon chip that completes described step (3) is put into described reactive tank and carry out surface treatment, to form matte at described front side of silicon wafer.
Further, described step (4) specifically comprises: form silicon nitride film at the described silicon chip back side that completes described step (3); Adopt alkali lye to carry out surface treatment to described silicon chip, to form matte at described front side of silicon wafer; Adopt hydrofluoric acid to remove described silicon nitride film.
Preferably, described diaphragm is silicon nitride film.
Wherein, the thickness of described silicon nitride film is 50nm～100nm, and refractive index is 1.5～2.5.
Preferably, described polishing fluid is sodium hydroxide solution.
Wherein, the concentration of described sodium hydroxide solution is 3%～10%, and temperature is 50 DEG C～100 DEG C.
Preferably, described treatment fluid is hydrofluoric acid.
Wherein, the concentration of described hydrofluoric acid is more than or equal to 3%.
Further, described employing polishing fluid carries out surface-treated step and specifically comprises completing the described silicon chip of described step (1): the described silicon chip that will complete described step (1) inserts in the gaily decorated basket; The described gaily decorated basket that fills described silicon chip is put in described treatment fluid.
In the preparation method of the solar cell that the embodiment of the present invention provides, by first forming diaphragm at front side of silicon wafer, then with polishing fluid, polishing is carried out to remove mechanical damage layer and to make silicon chip back side form flat surfaces in the back side of silicon chip, and then remove the diaphragm of front side of silicon wafer by treatment fluid, after so processing, the mechanical damage layer of silicon chip back side will be removed, and the front of silicon chip also can keep original appearance, next silicon chip is carried out to normal surface wool manufacturing technique, due to the consistent appearance of front side of silicon wafer and former silicon chip, so and Woolen-making liquid reaction can normally form etch pit, and silicon chip back side after polishing is slighter with reacting of Woolen-making liquid, the pattern of polished surface is not changed substantially, therefore, the final silicon chip obtaining has the positive pattern that is matte, the back side and is flat surfaces, use this silicon chip to make after solar cell, can not only improve light absorption, reduce the loss of long-wave band optical transmission, can also improve conversion efficiency.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, will the accompanying drawing of required use in embodiment be briefly described below.
The preparation method's of a kind of solar cell that Fig. 1 provides for the embodiment of the present invention flow chart;
Fig. 2 a～2d has been respectively in Fig. 1 the generalized section of silicon chip after each step;
The flow chart of the two-sided process for etching of silicon chip that Fig. 3 provides for the embodiment of the present invention;
The flow chart of the silicon chip one texture-etching side technique that Fig. 4 provides for the embodiment of the present invention;
Fig. 5 a～5c has been respectively in Fig. 4 the generalized section of silicon chip after each step.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.
The embodiment of the present invention provides a kind of preparation method of solar cell, and as shown in Fig. 1 and Fig. 2 a to Fig. 2 d, the method comprises the steps.
101, form diaphragm 22 in the front of silicon chip 21.
Specifically as shown in Figure 2 a, silicon chip 21 surfaces are mechanical damage layer 23 to this step, and diaphragm 22 is formed on the front of silicon chip 21.
102, adopt polishing fluid (not shown) to carry out surface treatment to the silicon chip 21 of completing steps 101, so that react with polishing fluid at the back side of silicon chip 21, remove mechanical damage layer 23 and form flat surfaces 24.
This step specifically as shown in Figure 2 b.
103, adopt treatment fluid to carry out surface treatment to the silicon chip 21 of completing steps 102, to remove the diaphragm 22 of front side of silicon wafer.
This step specifically as shown in Figure 2 c.
104, the silicon chip 21 of completing steps 103 is carried out to surface wool manufacturing technique, to form matte 25 in silicon chip 21 fronts.
This step specifically as shown in Figure 2 d.
In the preparation method of above-mentioned solar cell, by first forming diaphragm 22 in silicon chip 21 fronts, then with polishing fluid, polishing is carried out to remove mechanical damage layer 23 and to make silicon chip 21 back sides form flat surfaces 24 in the back side of silicon chip 21, and then remove the diaphragm 22 in silicon chip 21 fronts by treatment fluid, after so processing, the mechanical damage layer at silicon chip 21 back sides will be removed, and the front of silicon chip 21 also can keep original appearance, next silicon chip 21 is carried out to normal surface wool manufacturing technique, because silicon chip 21 is positive and the consistent appearance of former silicon chip, so and Woolen-making liquid reaction can normally form etch pit, and silicon chip 21 back sides after polishing are slighter with reacting of Woolen-making liquid, the pattern of flat surfaces 24 is not changed substantially, therefore, it is that matte 25, the back side are the pattern of flat surfaces 24 that the final silicon chip 21 obtaining has positive, use this silicon chip 21 to make after solar cell, can not only improve light absorption, reduce the loss of long-wave band optical transmission, can also improve conversion efficiency.
Above-mentioned steps 104 specifically can have two schemes, and one is one texture-etching side technique, and one is two-sided process for etching.
Below with reference to Fig. 1 and Fig. 3, two-sided process for etching is elaborated.
301, in reactive tank (not shown), put into the mixed solution of hydrofluoric acid and nitric acid.
Wherein, the solution ratio of nitric acid and hydrofluoric acid be preferably 10: 1～2: 1.
302, put into reactive tank and carry out surface treatment having completed in Fig. 1 the silicon chip of step 103, to form matte at front side of silicon wafer.
Wherein, the effect of nitric acid is to make elemental silicon be oxidized to silicon dioxide, and its reaction equation is:
3Si+4HNO3＝＝＝3SiO2+2HO2+4NO↑
And hydrofluoric acid constantly dissolves the silicon dioxide forming at silicon face, reaction is constantly carried out, its reaction equation is:
SiO2+6HF＝H2[SiF6]+2H2O
The complex compound hexafluorosilicic acid generating is water-soluble, by adjusting nitric acid and the ratio of hydrofluoric acid, the temperature control reaction speed of mixed solution.
Due at the flat surfaces completing in Fig. 1 after the silicon chip back side after step 103 is polishing, as mentioned above, silicon chip back side after polishing is slighter with reacting of Woolen-making liquid, the pattern of polished surface is not changed substantially, and only have front side of silicon wafer and mixed solution to react, therefore, finally can form matte at front side of silicon wafer.
Below with reference to Fig. 1, Fig. 4 and Fig. 5 a to Fig. 5 c, one texture-etching side technique is elaborated.
401, form silicon nitride films 51 at silicon chip 21 back sides that completed step 103 in Fig. 1.
This step specifically as shown in Figure 5 a.
402, adopt alkali lye to carry out surface treatment to silicon chip 21, to form matte 25 in silicon chip 21 fronts.
This step specifically as shown in Figure 5 b.Wherein, the alkali lye using is the sodium hydroxide solution of low concentration (being generally 1% left and right), due to silicon nitride not with NaOH generation chemical reaction, therefore, low concentration alkalescence Woolen-making liquid only can carry out making herbs into wool processing to silicon chip 21 fronts that do not form silicon nitride film 51, and its reaction equation is:
Si+2NaOH+H2O→NaSiO3+2H2↑
403, adopt hydrofluoric acid to remove silicon nitride film.
This step specifically as shown in Figure 5 c.Wherein, because chemical reaction can not occur for hydrofluoric acid and silicon body, only have silicon nitride and hydrofluoric acid to react, thereby do not affecting under the prerequisite of the silicon chip 21 positive mattes 25 that form, the silicon nitride film 51 of removing silicon chip 21 back sides, exposes the flat surfaces 24 of silicon chip 21 back sides after polishing.
In the preparation method of the solar cell that above-described embodiment provides, diaphragm 22 can be silicon nitride film, can certainly use other film not reacting with the composition of polishing fluid known to those skilled in the art.
Preferably, the thickness of silicon nitride film is 50nm～100nm, and refractive index is 1.5～2.5.Arrange like this and can make silicon nitride film provide better protection to silicon chip surface.Certainly,, in actual production use procedure, the thickness of silicon nitride film and refractive index can be selected according to actual needs.
In the preparation method of the solar cell that above-described embodiment provides, polishing fluid can be sodium hydroxide solution, can certainly use other liquid not reacting with the material of diaphragm 22 known to those skilled in the art.
Preferably, the concentration of sodium hydroxide solution is 3%～10%, and temperature is 50 DEG C～100 DEG C.Use such sodium hydroxide solution can make the polishing effect of silicon chip 21 better.Certainly,, in actual production use procedure, the concentration of sodium hydroxide solution and temperature can be selected according to actual needs.
In the preparation method of the solar cell that above-described embodiment provides; treatment fluid can be hydrofluoric acid; can certainly use other known to those skilled in the art to react with the material of diaphragm 22, but not react with silicon body, to remove the liquid of diaphragm.
Preferably, the concentration of hydrofluoric acid is more than or equal to 3%, to reach the object of removing better diaphragm.Certainly,, in actual production use procedure, the concentration of hydrofluoric acid also can be selected according to actual needs.
In the preparation method of the solar cell that above-described embodiment provides, adopt polishing fluid to carry out surface-treated step and specifically can comprise completing the silicon chip 21 of step 101 in Fig. 1: the silicon chip 21 that completes step 101 in Fig. 1 is inserted in the gaily decorated basket; The gaily decorated basket that fills silicon chip 21 is put in treatment fluid.The method is flower basket polishing mode, can certainly adopt alternate manner to realize the surface finish processing of silicon chip, for example mode of the online polishing of chain type.
The preparation method of the solar cell that the embodiment of the present invention provides is in the technologic improvement of existing cleaning and texturing, the preparation method of the solar cell providing by the embodiment of the present invention, can before carrying out, the techniques such as follow-up diffusion just form the silicon chip with flat rear surface, because follow-up technique can form required device on silicon chip, need in follow-up technique, not carry out polishing to silicon chip and just mean that the device of formation can be not destroyed, thereby can avoid the problem of the solar cell properties variation of the destroyed rear generation of device.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, any be familiar with those skilled in the art the present invention disclose technical scope in; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (10)
1. a preparation method for solar cell, is characterized in that, comprising:
(1), form diaphragm in the front of silicon chip;
(2), adopt polishing fluid to carry out surface treatment to the described silicon chip that completes described step (1) so that the back side of described silicon chip reacts with described polishing fluid, removal mechanical damage layer also forms flat surfaces;
(3), adopt treatment fluid to carry out surface treatment to the described silicon chip that completes described step (2), to remove the described diaphragm of described front side of silicon wafer;
(4), the described silicon chip that completes described step (3) is carried out to surface wool manufacturing technique, with the front formation matte at described silicon chip.
2. the preparation method of solar cell according to claim 1, is characterized in that, described step (4) specifically comprises:
In reactive tank, put into the mixed solution of hydrofluoric acid and nitric acid;
The described silicon chip that completes described step (3) is put into described reactive tank and carry out surface treatment, to form matte at described front side of silicon wafer.
3. the preparation method of solar cell according to claim 1, is characterized in that, described step (4) specifically comprises:
Form silicon nitride film at the described silicon chip back side that completes described step (3);
Adopt alkali lye to carry out surface treatment to described silicon chip, to form matte at described front side of silicon wafer;
Adopt hydrofluoric acid to remove described silicon nitride film.
4. according to the preparation method of the solar cell described in claim 1-3 any one, it is characterized in that, described diaphragm is silicon nitride film.
5. the preparation method of solar cell according to claim 4, is characterized in that, the thickness of described silicon nitride film is 50nm～100nm, and refractive index is 1.5～2.5.
6. according to the preparation method of the solar cell described in claim 1-3 any one, it is characterized in that, described polishing fluid is sodium hydroxide solution.
7. the preparation method of solar cell according to claim 6, is characterized in that, the concentration of described sodium hydroxide solution is 3%～10%, and temperature is 50 DEG C～100 DEG C.
8. according to the preparation method of the solar cell described in claim 1-3 any one, it is characterized in that, described treatment fluid is hydrofluoric acid.
9. the preparation method of solar cell according to claim 8, is characterized in that, the concentration of described hydrofluoric acid is more than or equal to 3%.
10. according to the preparation method of the solar cell described in claim 1-3 any one, it is characterized in that, described employing polishing fluid carries out surface-treated step and specifically comprises completing the described silicon chip of described step (1):
The described silicon chip that will complete described step (1) inserts in the gaily decorated basket;
The described gaily decorated basket that fills described silicon chip is put in described treatment fluid.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114907774A (en) * | 2022-06-17 | 2022-08-16 | 安徽华晟新能源科技有限公司 | Lyophobic coating, preparation method thereof and flower basket |
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