CN104003346A - Membrane structure, pressure sensor and electronic device - Google Patents
Membrane structure, pressure sensor and electronic device Download PDFInfo
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- CN104003346A CN104003346A CN201310058108.1A CN201310058108A CN104003346A CN 104003346 A CN104003346 A CN 104003346A CN 201310058108 A CN201310058108 A CN 201310058108A CN 104003346 A CN104003346 A CN 104003346A
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Abstract
The invention discloses a membrane structure, a pressure sensor and an electronic device, and relates to the field of a semiconductor technology. The membrane structure provided by the invention comprises at least two layers of stacked main structure layers, and an interlayer transition layer located between the adjacent main structure layers, wherein the main structure layers are made from conductive materials, and the interlayer transition layer is made from an amorphous compound; the pressure senor comprises the membrane structure; and the electronic device comprises the pressure sensor. Compared with the prior art, the membrane structure has better stress performance, better surface evenness, and smaller strain gradient; furthermore, the pressure sensor has better sensitivity and reliability due to the use of the membrane structure; and the electronic device has better sensitivity and reliability due to the use of the pressure sensor.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of membrane structure, pressure sensor and electronic installation.
Background technology
In prior art, as shown in Figure 1, it comprises the structure of traditional capacitor type semiconductor pressure sensor: substrate 1, is positioned at the fixed electrode 5 on substrate, and is positioned at the film 2 of the conduction of the occurred deformation of the top of substrate 1 and fixed electrode 5.Film 2 is fixed on substrate 1 by supporting construction 3, between film 2 and fixed electrode 5, is formed with closed cavity 4.Film 2 forms a capacity plate antenna with fixed electrode 5, and fixed electrode 5 is as the bottom electrode of capacity plate antenna, and film 2 is as the top electrode of capacity plate antenna.And pressure sensor also comprises conventionally, thin film transistor (TFT) (TFT) control circuit 6, it is generally positioned on substrate 1 and with capacity plate antenna and is connected.In the prior art, film 2 is generally the monofilm of germanium silicon material composition.
Briefly introduce the operation principle of the pressure sensor shown in Fig. 1 below, as follows.When there being pressure to be applied to film 2(, the top electrode of pressure sensor) or when being applied to pressure on film 2 and changing, will there is deformation in film 2, and the electric capacity of capacity plate antenna will change thereupon simultaneously.Therefore, can detect by control circuit 6 capacitance variations of capacity plate antenna, the variation of learning the suffered pressure of pressure sensor.
In industry application, the susceptibility of pressure sensor and reliability are vital factors.And the susceptibility of pressure sensor and reliability depend primarily on stress performance, strain gradient and surface smoothness as the film 2 of top electrode.
At present, the pressure sensor that adopts MEMS (MEMS) fabrication techniques is the advantage such as detection sensitivity is high, low cost of manufacture owing to having, and has obtained development fast.But along with the requirement of for example, performance to pressure sensor (, inertial sensor) in practical application constantly improves, the film 2 as pressure sensor top electrode of available technology adopting has been difficult to meet actual needs.
In the prior art, film 2 is the monofilm of germanium silicon material composition, and its thickness is approximately 2um.Often there are the following problems for it: (1) is in the time manufacturing film, although the stress performance that can obtain by Optimizing Process Parameters,, can cause the surface of film more coarse simultaneously, reduce the surface smoothness of film.And the reduction of surface smoothness must cause reducing to a certain extent the susceptibility of pressure sensor.Wherein, Fig. 2 shows the situation of change of the surface smoothness of the film making after the technological parameter of optimization thin film fabrication in prior art, Fig. 2 A and 2B are the SEM figure of the film making after Optimal Parameters, Fig. 2 A shows the SEM figure of the cross-section structure of the film making after Optimizing Process Parameters, and Fig. 2 B shows the surperficial SEM figure of the film making after Optimizing Process Parameters.(2) for the film of satisfying the demand, its stress objective value is 0MPa, but the fluctuation range allowing is in ± 50MPa.The corresponding relation curve of the thickness of film of the prior art and stress as shown in Figure 3.Visible, the stress performance of film of the prior art is unsatisfactory.(3) strain gradient of film of the prior art (, the monofilm of germanium silicon material composition) is generally larger.
Therefore,, for addressing the above problem, be necessary to propose a kind of new membrane structure.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of film, pressure sensor and electronic installation.
The invention provides a kind of membrane structure, it comprises at least agent structure layer of two-layer laminate, and layer to layer transition layer between adjacent described agent structure layer; Wherein, the material of described agent structure layer is conductive material, and the material of described layer to layer transition layer is amorphous compound.
Further, the material of described agent structure layer can be germanium silicon.
Wherein, the material of described layer to layer transition layer can be silica.
Wherein, the number of plies of the agent structure layer of described at least two-layer laminate is preferably 2 ~ 10.Preferred, the number of plies is 2 ~ 5.
Wherein, the thickness of described agent structure layer is
preferably, the thickness of agent structure layer is
Wherein, the thickness of described layer to layer transition layer is
preferably, the thickness of layer to layer transition layer is
Wherein, described film is for to prepare by boiler tube technique.
The invention provides a kind of pressure sensor, it comprises the membrane structure described in above-mentioned any one.
Wherein, described pressure sensor is capacitor type semiconductor pressure sensor.
The present invention also provides a kind of electronic installation, and it comprises pressure sensor as above.
With respect to prior art, membrane structure of the present invention has better stress performance, better surface smoothness, and less strain gradient.Pressure sensor of the present invention, has used this membrane structure, has better susceptibility and reliability.Electronic installation of the present invention, owing to having used above-mentioned pressure sensor, thereby also has better sensitivity and reliability.
Brief description of the drawings
Following accompanying drawing of the present invention is used for understanding the present invention in this as a part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.
In accompanying drawing:
Fig. 1 is the schematic cross sectional view of the structure of capacitor type semiconductor pressure sensor in prior art;
Fig. 2 is the surface smoothness situation schematic diagram of the film that makes after Optimizing Process Parameters in prior art, wherein, Fig. 2 A shows the SEM figure of the cross-section structure of the film making after Optimizing Process Parameters, and Fig. 2 B shows the surperficial SEM figure of the film making after Optimizing Process Parameters;
Fig. 3 is the schematic diagram of the relation between thickness and the stress of film of the prior art;
Fig. 4 is the schematic diagram of membrane structure of the present invention;
Fig. 5 is the surface smoothness situation schematic diagram of film of the present invention; Wherein, Fig. 5 A is the SEM figure of the cross-section structure of an example of this film, and Fig. 5 B is the surperficial SEM figure of this example film;
Fig. 6 is the schematic diagram of the relation between thickness and the stress of film of the present invention.
Detailed description of the invention
In the following description, a large amount of concrete details have been provided to more thorough understanding of the invention is provided.But, it is obvious to the skilled person that the present invention can be implemented without one or more these details.In other example, for fear of obscuring with the present invention, be not described for technical characterictics more well known in the art.
Should be understood that, the present invention can be with multi-form enforcement, and should not be interpreted as the embodiment that is confined to propose here.On the contrary, provide these embodiment to expose thorough and complete, and scope of the present invention is fully passed to those skilled in the art.
The object of term is only to describe specific embodiment and not as restriction of the present invention as used herein.In the time that this uses, " one " of singulative, " one " and " described/to be somebody's turn to do " also intention comprise plural form, unless the other mode of pointing out known in context.It is also to be understood that term " composition " and/or " comprising ", in the time using in these specifications, determine the existence of described feature, integer, step, operation, element and/or parts, but do not get rid of one or more other existence or the interpolations of feature, integer, step, operation, element, parts and/or group.In the time that this uses, term "and/or" comprises any and all combinations of relevant Listed Items.
Unless otherwise defined, all terms (comprising technology and scientific terminology) have the identical implication of conventionally understanding with the those of ordinary skill in field of the present invention as used herein.Also will understand, in dictionary such as common use, defined term should be understood to have the implication consistent with they implications in the environment of association area and/or this description, and can not explaining in desirable or excessively formal meaning, unless definition so expressly here.
In order thoroughly to understand the present invention, will detailed step and detailed structure be proposed in following description, so that film, pressure sensor and electronic installation that explaination the present invention proposes.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
The example arrangement of the film of embodiment of the present invention proposition is described with reference to Fig. 4 to Fig. 6 below.Wherein, the structural representation that Fig. 4 is film of the present invention; Fig. 5 is the surface smoothness situation schematic diagram of film of the present invention, and wherein, Fig. 5 A is the SEM figure of the cross-section structure of an example of this film, and Fig. 5 B is the surperficial SEM figure of this example film; Fig. 6 is the schematic diagram of the relation between thickness and the stress of film of the present invention.
The embodiment of the present invention provides a kind of membrane structure (abbreviation film), and this film is mainly used in pressure sensor (for example, capacitor type semiconductor pressure sensor), as the top electrode of pressure sensor.
The film of the embodiment of the present invention, comprises at least agent structure layer of two-layer laminate, and layer to layer transition layer between adjacent agent structure layer, and wherein, the material of agent structure layer is conductive material, is preferably germanium silicon (SiGe) film.The material of layer to layer transition layer is amorphous compound, is preferably silica.
Fig. 4 A shows an example of the film of the embodiment of the present invention, and this film comprises stacked two-layer agent structure layer 401 and the layer to layer transition layer 402 between them.
Fig. 4 B shows another example of the film of the embodiment of the present invention, and this film comprises three stacked layer main body structure sheafs 401, and two layer to layer transition layers 402 between adjacent agent structure layer.
In embodiments of the present invention, can according to actual needs, the quantity of the agent structure layer in each membrane structure be set.Ensureing, under the prerequisite of globality, to reach the object that reduces stress gradient.Preferably, the quantity of agent structure layer is 2 ~ 10.Now, can be in the case of ensureing that membrane structure has less crystallite dimension and good surface smoothness, saves the process time.If the number of plies is too much, although better proof stress gradient also means that globality can be poorer, after the mechanical movement repeating, divide damaged risk larger.If the number of plies is very few, although globality relatively can be better, the ability of reconciling control integral gradient can be relatively poor.Preferred, the quantity of agent structure layer is 2 ~ 5.
Wherein, the thickness of agent structure layer need to design and fixed according to practical devices, and usually, the thickness of agent structure layer is
preferably adopt germanium silicon as agent structure layer.Preferably, the thickness of agent structure layer is
Wherein, the thickness of layer to layer transition layer is
in order to ensure the electric conductivity of film integral, this thickness of layer to layer transition layer can not be too thick, otherwise can insulate, and also can affect the globality of film simultaneously.Preferably, the thickness of layer to layer transition layer is
The film of the embodiment of the present invention, can adopt boiler tube technique (furnace process) preparation, i.e. the formation of each layer main body structure sheaf all adopts boiler tube technique.Preferably, in the time selecting germanium silicon material to prepare the film of the embodiment of the present invention as agent structure layer, adopt low pressure, low temperature, low gas flow and high germanium component.
The film of the embodiment of the present invention, due to monofilm of the prior art is realized by the form of the laminated construction of multilayer agent structure layer, can regulate better the microstructure of crystal grain (, the microstructure of crystal grain is balanced), the mean size of restriction crystallite dimension, makes film have better surface smoothness.Exemplary, Fig. 5 B shows the schematic diagram (SEM figure) of the surface smoothness situation of film of the present invention (agent structure layer is the situation of 3 layers), compared with prior art (Fig. 2 B), obviously the crystallite dimension of the film of the embodiment of the present invention is less, and surface smoothness is better.
Meanwhile, because the microstructure of crystal grain is balanced, can make film there is better strain gradient uniformity, and strain gradient is reduced.
Fig. 6 is the schematic diagram of the relation between thickness and the stress of film of the present invention (agent structure layer is the situation of 3 layers).Obviously, more excellent with respect to the stress performance of the film of Fig. 3 embodiment of the present invention.
Fig. 5 and Fig. 6 demonstration, the membrane structure of the embodiment of the present invention can obtain less crystallite dimension and more unified stress distribution.Can find through testing us, the strain gradient of the film of this structure is approximately 2 × 10
-4μ m
-1.Compared with monofilm of the prior art, the absolute value of the strain gradient of the film of this laminated construction is less.And, along with the increase (, the increase that agent structure is counted layer by layer) of the number of plies, can obtain better crystallite dimension and more unified stress distribution.
In brief, film of the present invention, with respect to prior art, has better stress performance, better surface smoothness, and less strain gradient.Therefore,, when this film is applied to pressure sensor, susceptibility and the reliability of pressure sensor will effectively be improved.Those skilled in the art will appreciate that the film of the embodiment of the present invention, also can be applied to the occasion that other need conductive film, and be not limited to capacitance pressure transducer.
The embodiment of the present invention also provides a kind of pressure sensor, and this pressure sensor has used above-mentioned film.The pressure sensor of the embodiment of the present invention, is not limited to capacitance pressure transducer,, can be the pressure sensor that has used the arbitrary form of above-mentioned film, as resistive pressure sensor.Preferably, this pressure sensor is capacitor type semiconductor pressure sensor.Above-mentioned film is as the electrode of capacitor type semiconductor pressure sensor.The pressure sensor of the present embodiment, owing to having used the above-mentioned film of the present embodiment, thereby has better susceptibility and reliability.
Further, the embodiment of the present invention also provides a kind of electronic installation, and this electronic installation has used above-mentioned pressure sensor.The electronic installation of the present embodiment; it can be the device driving by electric energy using in the industry-by-industries such as consumer electronics, water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe, pipeline; every electronic installation that has used above-mentioned pressure sensor, all falls into protection scope of the present invention.The electronic installation of the present embodiment, because the pressure sensor using has better susceptibility and reliability, thereby it also possesses better sensitivity and reliability.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment is the object for giving an example and illustrating just, but not is intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (13)
1. a membrane structure, is characterized in that, comprises at least agent structure layer of two-layer laminate, and layer to layer transition layer between adjacent described agent structure layer;
Wherein, the material of described agent structure layer is conductive material, and the material of described layer to layer transition layer is amorphous compound.
2. membrane structure as claimed in claim 1, is characterized in that, the material of described agent structure layer is germanium silicon.
3. membrane structure as claimed in claim 1, is characterized in that, the material of described layer to layer transition layer is silica.
4. the membrane structure as described in claims 1 to 3 any one, is characterized in that, the number of plies of the agent structure layer of described at least two-layer laminate is 2 ~ 10.
5. membrane structure as claimed in claim 4, is characterized in that, the number of plies of the agent structure layer of described at least two-layer laminate is 2 ~ 5.
6. the membrane structure as described in claims 1 to 3 any one, is characterized in that, the thickness of described agent structure layer is
7. membrane structure as claimed in claim 6, is characterized in that, the thickness of described agent structure layer is
8. the membrane structure as described in claims 1 to 3 any one, is characterized in that, the thickness of described layer to layer transition layer is
9. membrane structure as claimed in claim 8, is characterized in that, the thickness of described layer to layer transition layer is
10. the membrane structure as described in claims 1 to 3 any one, is characterized in that, described film is prepared by boiler tube technique.
11. 1 kinds of pressure sensors, is characterized in that, comprise the membrane structure described in claim 1 to 10 any one.
12. pressure sensors as claimed in claim 11, is characterized in that, described pressure sensor is capacitor type semiconductor pressure sensor.
13. 1 kinds of electronic installations, is characterized in that, comprise the pressure sensor described in claim 11 or 12.
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| CN201310058108.1A CN104003346B (en) | 2013-02-25 | 2013-02-25 | A kind of membrane structure, pressure sensor and electronic device |
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| CN201310058108.1A CN104003346B (en) | 2013-02-25 | 2013-02-25 | A kind of membrane structure, pressure sensor and electronic device |
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| CN104003346B CN104003346B (en) | 2019-05-17 |
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