CN103887181A - Leading wire framework processing method - Google Patents
Leading wire framework processing method Download PDFInfo
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- CN103887181A CN103887181A CN201210558306.XA CN201210558306A CN103887181A CN 103887181 A CN103887181 A CN 103887181A CN 201210558306 A CN201210558306 A CN 201210558306A CN 103887181 A CN103887181 A CN 103887181A
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- conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
Abstract
The invention provides a leading wire framework processing method. The leading wire framework processing method comprises steps that: a first face of a carrier material is processed to form a first conductive layer; the first conductive layer is provided with a medium layer; the medium layer is provided with a second conductive layer; a plurality of holes are formed on the second conductive layer through drilling and penetrate through the first conductive layer; a conductive substance is filled in the holes; a second film is pasted on the second conductive layer; exposure development processing on the second film is carried out to expose a non-line graph area; the conductive substance in the non-line graph area is etched to form a line graph. The leading wire framework processing method facilitates to improve making precision of a leading wire framework.
Description
Technical field
The present invention relates to circuit board processing and manufacturing technical field, be specifically related to lead frame processing method.
Background technology
Lead frame, as the chip carrier of integrated circuit, is a kind of electrical connection that realizes chip internal circuit exit and outer lead by means of bonding material (spun gold, aluminium wire or copper wire), forms the key structure part of electric loop.Wherein, lead frame has played the function served as bridge being connected with outer lead, and in the semiconductor integrated chip of the overwhelming majority, all needing to use lead frame, lead frame is at present basic device important in electronics and information industry.
Current, conventional lead frame production technology is punching type and the large class of etching type two, produces as main flow at present take punching type.The for example lead frame of diode, triode has a hundreds of kind, and the overwhelming majority is wherein punching type production technology.Used in integrated circuits lead frame, flushing technology can carry out volume production to the following kind of 100 stitch (pin), can meet the use needs of multiple Plastic Package form.Etching type lead frame is mainly used in new product development and the framework of lead-in wire pitch below 0.65mm produced, and can produce the lead frame of 170pin-230pin left and right.
In production and practice process, inventor finds, adopts traditional punching type and etching type technique to make lead frame, being subject to certain limitation aspect making precision, has been difficult to satisfy the demand under the scene of some requirements at the higher level.
Summary of the invention
The embodiment of the present invention provides a kind of lead frame processing method, to further improving the making precision of lead frame.
The invention provides a kind of lead frame processing method, can comprise:
On the first surface of carrier material, process the first conductive layer;
On described the first conductive layer, dielectric layer is set;
The second conductive layer is set on described dielectric layer;
On described the second conductive layer, get out several holes that connect to described the first conductive layer;
Filled conductive material in described hole;
Remove residue the first film on described the second conductive layer;
On described the second conductive layer, paste the second film;
By being carried out to exposure imaging processing, described the second film exposes logicalnot circuit graph area;
Etch away the conductive materials of described logicalnot circuit graph area to form line pattern.
Optionally, described on described the second conductive layer, get out to connect to several holes of described the first conductive layer comprise: remove or attenuate described in the conductive materials of hole machining area on the second conductive layer; Get out several holes that connect to described the first conductive layer at the described hole machining area of removal or attenuate conductive materials.
Optionally, describedly in described hole, before filled conductive material, also comprise: got out on described second conductive layer in described several holes and pasted the first film; Described the first film is carried out to exposure imaging processing to expose described hole; Describedly also comprise paste the second film on described the second conductive layer before: at residue the first film of removing on described the second conductive layer.
Optionally, described described the first film is carried out to exposure imaging processing to expose described hole, filled conductive material in described hole, comprising:
Described the first film is carried out to exposure imaging processing to expose line pattern region and described hole, and wherein, described exposure imaging residue the first film after treatment covers the logicalnot circuit graphics field of described the second conductive layer; Filled conductive material thicken the conductive materials in described line pattern region in described hole;
After described residue the first film removing on described the second conductive layer, also comprise stick the second film on described the second conductive layer before: by the second conductive layer described in micro-corrosion liquid microetch with the second conductive layer thickness described in attenuate.
Optionally, remove described carrier material and described the first conductive layer.
Optionally, described first conductive layer that processes on the first surface of carrier material, comprising: by chemical plating or sputter on the first surface of carrier material and form the first metal seed layer; On described the first metal seed layer, process the first electronic conduction layer.
Optionally, described the first metal seed layer comprises: at least one of nickel, iron, copper and titanium.
Optionally, the described first electronic conduction layer that processes on described the first metal seed layer, comprising: on described the first metal seed layer, form the first electronic conduction layer by electroplating.
Optionally, on described described the second conductive layer having got out described several holes, before pad pasting, also comprise: by chemical plating or sputter on the hole wall in described several holes that get out and form the second metal seed layer.
Optionally, in described hole, filled conductive material comprises: in described hole, fill up conductive materials by plating or chemical plating.
Optionally, described second conductive layer that arranges on described dielectric layer comprises: lamination copper foil layer on described dielectric layer.
Optionally, the thickness of described the second conductive layer is 1 ~ 10 micron.
Therefore, in the lead frame processing scheme providing in the embodiment of the present invention, on the first surface of carrier material, process the first conductive layer; On the first conductive layer, dielectric layer is set; The second conductive layer is set on dielectric layer; On the second conductive layer, get out several holes that connect to the first conductive layer; Filled conductive material in hole; Remove residue the first film on the second conductive layer; On the second conductive layer, paste the second film; By being carried out to exposure imaging processing, the second film exposes logicalnot circuit graph area; Etch away the conductive materials of logicalnot circuit graph area to form line pattern.Wherein, in embodiment of the present invention scheme, the generation type of lead frame is first to form dielectric layer, form again interlayer interconnected, then form surface lines figure, and surface lines figure and interlayer are interconnected can be to form with circuit processing mode, and utilize the first conductive layer as reference, on the second conductive layer, get out several holes that connect to the first conductive layer, be conducive to like this controlled working accuracy, and then be conducive to improve the making precision of lead frame and reduce costs.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the schematic flow sheet that the embodiment of the present invention provides a kind of lead frame processing method;
A kind of lead frame machining sketch chart that Fig. 2 ~ Figure 15 provides for the embodiment of the present invention;
The another kind of lead frame machining sketch chart that Fig. 2 ~ Fig. 6 and Figure 16 ~ Figure 24 provide for the embodiment of the present invention.
Embodiment
The embodiment of the present invention provides a kind of lead frame processing method, to further improving the making precision of lead frame.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Term " first " in specification of the present invention and claims and above-mentioned accompanying drawing, " second ", " the 3rd " " 4th " etc. (if existence) are for distinguishing similar object, and needn't be used for describing specific order or precedence.The data that should be appreciated that such use suitably can exchanged in situation, so as embodiments of the invention described herein for example can with except diagram here or describe those order enforcement.In addition, term " comprises " and " having " and their any distortion, intention is to cover not exclusive comprising, for example, those steps or unit that process, method, system, product or the equipment that has comprised series of steps or unit is not necessarily limited to clearly list, but can comprise clearly do not list or for these processes, method, product or equipment intrinsic other step or unit.
An embodiment of lead frame processing method of the present invention, wherein, a kind of lead frame processing method can comprise: on the first surface of carrier material, process the first conductive layer; On the first conductive layer, dielectric layer is set; The second conductive layer is set on above-mentioned dielectric layer; On the second conductive layer, get out several holes that connect to the first conductive layer; Filled conductive material in above-mentioned hole; On the second conductive layer, paste the second film; Expose above-mentioned logicalnot circuit graph area by the second film being carried out to exposure imaging processing; Etch away the conductive materials of above-mentioned logicalnot circuit graph area to form line pattern.
Refer to Fig. 1, the schematic flow sheet of a kind of lead frame processing method that Fig. 1 provides for the embodiment of the present invention.As shown in Figure 1, a kind of lead frame processing method that the embodiment of the present invention provides can comprise following content:
101, on the first surface of carrier material, process the first conductive layer.
In some embodiments of the invention, on the first surface of carrier material, processing the first conductive layer can comprise: by chemical plating or sputter on the first surface of carrier material and form the first metal seed layer, processing on the first metal seed layer (for example electroplate or chemical plating etc.) goes out the first electronic conduction layer.Or, can directly on the first surface of carrier material, process the first conductive layer by chemical plating.
Wherein, the first metal seed layer can comprise: at least one in nickel, iron, copper and titanium, certain the first metal seed layer also can comprise other metal.Wherein, the first electronic conduction layer can comprise: at least one in tin, nickel and copper, certain the first electronic conduction layer also can comprise other metal.
In some embodiments of the invention, one of effect of the first metal seed layer is in order to conduct electricity to realize plating, the feature of the first metal seed layer can be, possesses the suitable bonding state with carrier material (as PET film), its bonding state should meet processing needs below and be not easy to separate, and meets again finally easy and peeling off of carrier material and tears.One of effect of the first electronic conduction layer is for the reference as follow-up boring, deeply bores thoroughly to defend to hole.
102, on the first conductive layer, dielectric layer is set.
In some embodiments of the invention, can on the first conductive layer, apply one deck dielectric layer, and can toast at a certain temperature certain hour with semi-solid preparation or curing medium layer, to form the dielectric layer of lead frame.Wherein dielectric layer can be in epoxy resin, phenolic resins, polyimides, cyanate and bismaleimide-triazine resin at least one etc., certainly dielectric layer also can comprise other dielectric.
Wherein, the mode that applies one deck dielectric layer on the first conductive layer can comprise: roller coating, spraying, silk screen printing or curtain are coated with etc.
103, the second conductive layer is set on above-mentioned dielectric layer.
Wherein, the thickness of the second conductive layer is for example 1 ~ 10 micron or other thickness, and for example thickness of the second conductive layer is 2 microns, 2.5 microns, 3 microns, 3.5 microns, 4 microns, 6 microns, 8 microns or 10 microns or 12 microns or other thickness.
In some embodiments of the invention, the second conductive layer is set on above-mentioned dielectric layer can be comprised: lamination copper foil layer on above-mentioned dielectric layer (or other electric conducting material).Or, can on above-mentioned dielectric layer, form the second conductive layer by sputter or chemical plating.
104, on the second conductive layer, get out several holes that connect to the first conductive layer.
105, filled conductive material in above-mentioned hole.
In some embodiments of the invention, can in above-mentioned hole, fill up conductive materials by plating or chemical plating or alternate manner, interconnected to form the interlayer of lead frame.
In some embodiments of the invention, in above-mentioned hole, before filled conductive material, can comprise: got out on second conductive layer in above-mentioned several holes and pasted the first film; The first film is carried out to exposure imaging processing to expose above-mentioned hole.In some embodiments of the invention, also can comprise paste the first film on the second conductive layer that has got out above-mentioned several holes before: by chemical plating or sputter on the hole wall in several holes that get out and form the second metal seed layer.
Wherein, the second metal seed layer can comprise: at least one in tin, nickel, iron, copper and titanium, certain the second metal seed layer also can comprise other metal.
Certainly, in other embodiment of the present invention, on the second conductive layer, get out and connect to several holes of the first conductive layer, can not carry out on the second conductive layer that has got out above-mentioned several holes and paste the first film; The first film is carried out to exposure imaging processing to expose the step in above-mentioned hole, and can be directly in above-mentioned hole, fill up conductive materials by plating or chemical plating or alternate manner, or can be by chemical plating or after sputtering at and forming the second metal seed layer on the hole wall in several holes that get out, directly in above-mentioned hole, fill up conductive materials by plating or chemical plating or alternate manner, if the second conductive layer surface out-of-flatness afterwards, and need to carry out evenness processing, can be by modes such as polishing or microetches by smooth the second conductive layer surface.
In some embodiments of the invention, the first film is carried out to exposure imaging processing to expose above-mentioned hole, in above-mentioned hole filled conductive material comprise: the first film is carried out to exposure imaging processing to expose line pattern region and above-mentioned hole, in above-mentioned hole, fills up conductive materials and thicken the conductive materials in above-mentioned line pattern region by plating or chemical plating or alternate manner.
Be appreciated that by electroplating and/or chemical plating mode is filled up conductive materials in above-mentioned hole, interconnected to form the interlayer of lead frame, be conducive to like this formation precision interconnected between good key-course, improve a lot aspect precision compared with prior art.
106, on the second conductive layer, paste the second film.
In some embodiments of the invention, after residue the first film of removing on the second conductive layer, also can comprise stick the second film on the second conductive layer before: by micro-corrosion liquid microetch the second conductive layer with attenuate the second conductive layer thickness.
107, by being carried out to exposure imaging processing, the second film exposes logicalnot circuit graph area.
108, the conductive materials that etches away logicalnot circuit graph area on the second conductive layer is to form line pattern.
Wherein, etch away the conductive materials of logicalnot circuit graph area on the second conductive layer, just formed the surface lines figure of lead frame.Further, form the thickness of line pattern with attenuate formation line pattern by micro-corrosion liquid microetch.
In some embodiments of the invention, after the conductive materials of logicalnot circuit graphics field of removing the second conductive layer, also can further remove above-mentioned carrier material and the first conductive layer.Certainly, also can remove dry film or the diaphragm etc. on line pattern.
For ease of better understanding and implement the such scheme of the embodiment of the present invention, carry out application scenarios for example below in conjunction with accompanying drawing.
Please also refer to Fig. 2 ~ Figure 15, wherein, a kind of lead frame machining sketch chart that Fig. 2 ~ Figure 15 provides for the embodiment of the present invention.The another kind of lead frame machining sketch chart that Fig. 2 ~ Fig. 6 and Figure 16 ~ Figure 24 provide for the embodiment of the present invention.
Wherein, Fig. 2 illustrates a kind of carrier material 201.Fig. 3 is illustrated on carrier material 201 and forms the first metal seed layer 202 by chemical plating or sputter, and then processing on the first metal seed layer 202 (for example plating or chemical plating etc.) goes out the first electronic conduction layer 203.Wherein, the first metal seed layer 202 for example can comprise at least one in nickel, iron, copper and titanium, and certainly, the first metal seed layer 202 also can comprise other metal.Wherein, the first electronic conduction layer 203 can comprise: at least one in tin, nickel and copper, certain the first electronic conduction layer 203 also can comprise other metal.
In some embodiments of the invention, one of effect of the first metal seed layer 202 is in order to conduct electricity to realize plating, the feature of the first metal seed layer 202 can be, possesses the suitable bonding state with carrier material (as PET film), its bonding state should meet processing needs below and be not easy to separate, and meets again finally easy and peeling off of carrier material and tears.One of effect of the first electronic conduction layer 203 is for the reference as follow-up boring, deeply bores thoroughly to defend to hole.
Fig. 4 is illustrated on the first electronic conduction layer 203 dielectric layer 204 is set.
In some embodiments of the invention, on the first electronic conduction layer 203, apply one deck dielectric layer 204, and can toast at a certain temperature certain hour with semi-solid preparation or curing medium layer, to form the dielectric layer of lead frame.Wherein, dielectric layer 204 can be at least one in epoxy resin, phenolic resins, polyimides, cyanate and bismaleimide-triazine resin etc., and certainly, dielectric layer 204 also can comprise other dielectric.
Fig. 5 is illustrated in the second conductive layer 205 is set on dielectric layer 204.
Wherein, the thickness of the second conductive layer 205 is for example 1 ~ 10 micron or other thickness, and for example thickness of the second conductive layer 205 is 2 microns, 2.5 microns, 3 microns, 3.5 microns, 4 microns, 6 microns, 8 microns or 10 microns or 12 microns or other thickness.
In some embodiments of the invention, the second conductive layer 205 for example can be copper foil layer, can copper foil layer be laminated on dielectric layer 204 by the mode of lamination.Or, can on dielectric layer 204, form the second conductive layer 205 by sputter or chemical plating.
Referring to Fig. 6, Fig. 6 shows and on the second conductive layer 205, gets out several holes 206 that connect to the first electronic conduction layer 203.
Fig. 7 ~ Figure 15 is illustrated in a kind of possible following process mode on architecture basics shown in Fig. 6.
Figure 16 ~ Figure 24 is illustrated in the possible following process mode of the another kind on architecture basics shown in Fig. 6.
Wherein, as shown in Figure 7, Fig. 7 is illustrated on the second conductive layer 205 that has got out several holes 206 and pastes the first film 207, and the first film 207 is carried out to exposure imaging processing to expose hole 206.
In some embodiments of the invention, also can comprise paste the first film 207 on the second conductive layer 205 that has got out above-mentioned several holes 206 before: by chemical plating or sputter at and form the second metal seed layer (in figure for illustrating) on the hole wall in several holes 206 that get out.
Wherein, the second metal seed layer can comprise: at least one in tin, nickel, iron, copper and titanium, certain the second metal seed layer also can comprise other metal.
Fig. 8 shows at the interior filled conductive material 209 in above-mentioned hole 206.
In some embodiments of the invention, for example can by plating or chemical plating or alternate manner in hole 206 interior filled conductive material 209.
Be appreciated that by electroplating and/or chemical plating mode is filled up conductive materials in above-mentioned hole, interconnected to form the interlayer of lead frame, be conducive to like this formation precision interconnected between good key-course, improve a lot aspect precision compared with prior art.
Fig. 9 shows residue the first film 207 of removing on the second conductive layer 205.
Figure 10 shows and on the second conductive layer 205, pastes the second film 210.
Figure 11 exposes logicalnot circuit graph area by the second film 210 is carried out to exposure imaging processing.
Figure 12 illustrates the conductive materials of the logicalnot circuit graphics field that etches away the second conductive layer 205, forms the surface lines figure of lead frame.
Figure 13 illustrates and has removed carrier material 201.
Figure 14 illustrates and has removed the first metal seed layer 201 and the first conductive layer 203.
Figure 15 illustrates residue the second film 210 of having removed on the second conductive layer 205, and remaining part forms lead frame.
Please also refer to Figure 16 ~ Figure 24, wherein, as shown in figure 16, Figure 16 is illustrated on the second conductive layer 205 that has got out several holes 206 and pastes the first film 207, and the first film 207 is carried out to exposure imaging processing to expose hole 206 and line pattern region.
In some embodiments of the invention, on the second conductive layer 205 that has got out above-mentioned several holes 206, before pad pasting, also can comprise: by chemical plating or sputter at and form the second metal seed layer (in figure for illustrating) on the hole wall in several holes 206 that get out.
Wherein, the second metal seed layer can comprise: at least one in tin, nickel, iron, copper and titanium, certain the second metal seed layer also can comprise other metal.
Figure 17 shows in hole 206 interior filled conductive material and thickens the conductive materials in line pattern region.
In some embodiments of the invention, for example can in hole 206, fill up conductive materials 209 by plating or chemical plating or alternate manner, and thicken the conductive materials in line pattern region.
Be appreciated that by electroplating and/or chemical plating mode is filled up conductive materials in above-mentioned hole, interconnected to form the interlayer of lead frame, be conducive to like this formation precision interconnected between good key-course, improve a lot aspect precision compared with prior art.
Figure 18 shows residue the first film 207 of removing on the second conductive layer 205.
Figure 19 shows and on the second conductive layer 205, pastes the second film 210.
Figure 20 exposes logicalnot circuit graph area by the second film 210 is carried out to exposure imaging processing.
Figure 21 illustrates the conductive materials of the logicalnot circuit graphics field that etches away the second conductive layer 205, forms the surface lines figure of lead frame.Further, also can be by the conductive materials thickness of the surface lines figure of micro-corrosion liquid attenuate lead frame.
Figure 22 illustrates and has removed carrier material 201.
Figure 23 illustrates and has removed the first metal seed layer 201 and the first conductive layer 203.
Figure 24 illustrates residue the second film 210 of having removed on the second conductive layer 205, and remaining part forms lead frame.
Be appreciated that the structure shown in above-mentioned accompanying drawing, only for illustrating needs, also may adjust in actual applications certainly as required flexibly.
Therefore, in the lead frame processing scheme providing in the embodiment of the present invention, on the first surface of carrier material, process the first conductive layer; On the first conductive layer, dielectric layer is set; The second conductive layer is set on dielectric layer; On the second conductive layer, get out several holes that connect to the first conductive layer; On the second conductive layer that has got out several holes, paste the first film; The first film is carried out to exposure imaging processing to expose hole; Filled conductive material in hole; Remove residue the first film on the second conductive layer; On the second conductive layer, paste the second film; By being carried out to exposure imaging processing, the second film exposes logicalnot circuit graph area; Etch away the conductive materials of logicalnot circuit graph area to form line pattern.Wherein, in embodiment of the present invention scheme, the generation type of lead frame is first to form dielectric layer, form again interlayer interconnected, then form surface lines figure, and surface lines figure and interlayer are interconnected can be to form with circuit processing mode, and utilize the first conductive layer as reference, on the second conductive layer, get out several holes that connect to the first conductive layer, be conducive to like this controlled working accuracy, and then be conducive to improve the making precision of lead frame and reduce costs.
It should be noted that, for aforesaid each embodiment of the method, for simple description, therefore it is all expressed as to a series of combination of actions, but those skilled in the art should know, the present invention is not subject to the restriction of described sequence of movement, because according to the present invention, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in specification all belongs to preferred embodiment, and related action and module might not be that the present invention is necessary.In the above-described embodiments, the description of each embodiment is all emphasized particularly on different fields, in certain embodiment, there is no the part of detailed description, can be referring to the associated description of other embodiment.
The lead frame the processing method above embodiment of the present invention being provided is described in detail, applied specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in summary, this description should not be construed as limitation of the present invention meanwhile.
Claims (10)
1. a lead frame processing method, is characterized in that, comprising:
On the first surface of carrier material, process the first conductive layer;
On described the first conductive layer, dielectric layer is set;
The second conductive layer is set on described dielectric layer;
On described the second conductive layer, get out several holes that connect to described the first conductive layer;
Filled conductive material in described hole;
On described the second conductive layer, paste the second film;
By being carried out to exposure imaging processing, described the second film exposes logicalnot circuit graph area;
Etch away the conductive materials of described logicalnot circuit graph area to form line pattern.
2. method according to claim 1, is characterized in that, described several holes that connect to described the first conductive layer that get out on described the second conductive layer, comprising:
The conductive materials of hole machining area on the second conductive layer described in removal or attenuate;
Get out several holes that connect to described the first conductive layer at the described hole machining area of removal or attenuate conductive materials.
3. method according to claim 1, is characterized in that, describedly in described hole, before filled conductive material, also comprises: got out on described second conductive layer in described several holes and pasted the first film; Described the first film is carried out to exposure imaging processing to expose described hole;
Describedly also comprise paste the second film on described the second conductive layer before: at residue the first film of removing on described the second conductive layer.
4. method according to claim 3, it is characterized in that, described described the first film is carried out to exposure imaging processing to expose described hole, filled conductive material in described hole, comprise: described the first film is carried out to exposure imaging processing to expose line pattern region and described hole, wherein, described exposure imaging residue the first film after treatment covers the logicalnot circuit graphics field of described the second conductive layer; Filled conductive material thicken the conductive materials in described line pattern region in described hole;
After described residue the first film removing on described the second conductive layer, also comprise stick the second film on described the second conductive layer before: by the second conductive layer described in micro-corrosion liquid microetch with the second conductive layer thickness described in attenuate.
5. according to the method described in claim 1 to 4 any one, it is characterized in that, described method also comprises: remove described carrier material and described the first conductive layer.
6. according to the method described in claim 1 to 5 any one, it is characterized in that,
Described first conductive layer that processes on the first surface of carrier material, comprising: by chemical plating or sputter on the first surface of carrier material and form the first metal seed layer; On described the first metal seed layer, process the first electronic conduction layer.
7. method according to claim 4, is characterized in that,
Described the first metal seed layer comprises: at least one of nickel, iron, copper and titanium.
8. according to the method described in claim 1 to 7 any one, it is characterized in that, on described described the second conductive layer having got out described several holes, before pad pasting, also comprise: by chemical plating or sputter on the hole wall in described several holes that get out and form the second metal seed layer.
9. according to the method described in claim 1 to 8 any one, it is characterized in that,
Described second conductive layer that arranges on described dielectric layer comprises:
Lamination copper foil layer on described dielectric layer.
10. according to the method described in claim 1 to 9 any one, it is characterized in that,
The thickness of described the second conductive layer is 1 ~ 10 micron.
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| CN201210558306.XA CN103887181B (en) | 2012-12-20 | 2012-12-20 | Lead frame processing method |
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| CN201210558306.XA CN103887181B (en) | 2012-12-20 | 2012-12-20 | Lead frame processing method |
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| CN101847586A (en) * | 2010-03-19 | 2010-09-29 | 威盛电子股份有限公司 | Circuit substrate process and circuit substrate |
| CN102194703A (en) * | 2010-03-16 | 2011-09-21 | 旭德科技股份有限公司 | Circuit substrate and manufacturing method thereof |
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| US20040201096A1 (en) * | 2003-03-31 | 2004-10-14 | Tomoo Iijima | Wiring circuit board, manufacturing method for the wiring circuit board, and circuit module |
| CN1674269A (en) * | 2004-03-26 | 2005-09-28 | 株式会社能洲 | Interlayer member used for producing multi-layer wiring board and method of producing the same |
| CN101192542A (en) * | 2006-11-22 | 2008-06-04 | 全懋精密科技股份有限公司 | Circuit board structure and its manufacture method |
| CN102194703A (en) * | 2010-03-16 | 2011-09-21 | 旭德科技股份有限公司 | Circuit substrate and manufacturing method thereof |
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