CN103792036A - MEMS chip with air pressure sensor and acceleration sensor integrated and manufacturing method thereof - Google Patents
MEMS chip with air pressure sensor and acceleration sensor integrated and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an MEMS chip with an air pressure sensor and an acceleration sensor integrated. The MEMS chip comprises a monocrystalline silicon piece, a glass cover plate and a glass base plate, the air pressure sensor and the acceleration sensor are integrated on the monocrystalline silicon piece, the air pressure sensor comprises a first induction silicon film, a plurality of first stress-sensitive resistors arranged on the first induction silicon film and a first groove embedded into the glass cover plate upwards from the bottom end of the glass cover plate, and a vertical through air guide-in hole is formed in the glass base plate. The acceleration sensor comprises a mass block, an elastic cantilever beam connected with one end of the mass block, a plurality of second stress-sensitive resistors arranged on the elastic cantilever beam and a second groove embedded into the glass cover plate upwards from the bottom end of the glass cover plate. The invention further discloses a manufacturing method of the MEMS chip. The MEMS chip and the manufacturing method of the MEMS chip have the advantages that the air pressure sensor and the acceleration sensor are integrated in the same chip through the same set of process, the size is small, and the structure is compact; the sensitivity is high, and reliability and stability are good. The manufacturing process of the chip is simple, and cost is low.
Description
Technical field
The present invention relates to one and apply to TPMS(system for monitoring pressure in tyre) MEMS(MEMS (micro electro mechanical system)) chip, in particular mutually integrated MEMS chip of a kind of air pressure and acceleration transducer and preparation method thereof, belongs to MEMS technical field.
Background technology
TPMS is mainly used in Real-Time Monitoring tire pressure in vehicle traveling process, and reports to the police with infrabar to having a flat tire, with guarantee driving safety.In sensor assembly, baroceptor detects the pressure of tire, and by radio frequency, numerical value is sent to receiver, and receiver carries out early warning judgement according to software set.The frequency whether baroceptor detects and detect is determined by acceleration transducer, utilize the susceptibility of acceleration transducer to motion, can realize automobile starting time, Auto Power On wakes up, when galloping, determines sense cycle by movement velocity, reduces power consumption when guaranteeing pre-alerting ability.
The structure of the mutually integrated MEMS chip of air pressure and acceleration transducer and method for making have had related in the prior art, but all have some significant defects.As the patent No. patent that is ZL200910051766.1, integrated silicon chip and the method for making of a kind of testing acceleration, pressure and temperature are disclosed, it adopts polysilicon membrane to form force sensing resistance bar and makes pressure transducer, and the temperature difference that adopts thermoelectric pile to detect in the sealed cavity being caused by acceleration is carried out sense acceleration.The polycrystalline silicon material piezoresistance coefficient that this patent adopts is far below monocrystalline silicon, so sensitivity is on the low side; Adopt polysilicon resistance to make well heater, the power consumption of system is increased, battery electric quantity can be exhausted very soon, automobile is in the time of high-speed motion in addition, and the rising of temperature is larger on the temperature difference impact in annular seal space.For another example the patent that the patent No. is ZL201010553946.2, only crystal silicon chip integrated chip and method for making of a kind of acceleration and pressure transducer also disclosed, it forms monocrystalline silicon thin film and embedded cavity by lateral etching technology, and make pressure transducer at monocrystalline silicon thin film upper surface distribution pressure drag, acceleration transducer adopts double cantilever beam and mass block structure, adopt Electrocoppering method to increase mass quality, improve sensitivity.This patent adopts sidewall root lateral etching technology to form film and cavity, and etch rate is wayward; In addition, cannot form larger mass, need the extra quality that adopts copper-plated mode to increase mass.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, mutually integrated MEMS chip of a kind of air pressure and acceleration transducer and preparation method thereof is provided, this chip is integrated in baroceptor and acceleration transducer in a chip, compact conformation, dependable performance; And the method for making of this chip is simple, easily to control, cost is low, is suitable for producing in enormous quantities.
The present invention is achieved by the following technical solutions:
The MEMS chip that a kind of air pressure provided by the invention and acceleration transducer are mutually integrated, comprise as the monocrystalline silicon piece of main body and lay respectively at glass cover-plate and the glass film plates of described monocrystalline silicon piece top and bottom, on described monocrystalline silicon piece, be integrated with baroceptor and acceleration transducer, wherein
Described baroceptor comprises the first induction silicon fiml that is positioned at monocrystalline silicon piece top, multiple the first stress sensitive resistance being positioned on described the first induction silicon fiml, and upwards embed the first groove in described glass cover-plate from described glass cover-plate bottom, described the first groove is positioned on described the first induction silicon fiml and can covers described the first induction silicon fiml completely, the top of described the first groove and described monocrystalline silicon piece forms the first vacuum chamber of a sealing, described monocrystalline silicon piece is provided with the first cavity of lower ending opening under the first sense film, described glass film plates is provided with the gas entrance hole of up/down perforation, described gas entrance hole is communicated with described the first cavity, described multiple the first stress sensitive resistance connects into pressure detection circuit,
Described acceleration transducer comprises mass, the elastic cantilever being connected with described mass one end, be positioned at multiple the second stress sensitive resistance on described elastic cantilever, and upwards embed the second groove in described glass cover-plate from described glass cover-plate bottom, described elastic cantilever is positioned at described monocrystalline silicon piece top, described the second groove is positioned on described mass and elastic cantilever and can covers described mass and elastic cantilever completely, described monocrystalline silicon piece is provided with the second cavity of lower ending opening under mass and elastic cantilever, the bottom of described the second cavity is airtight through described glass film plates, described the second cavity is communicated with the second vacuum chamber of the sealing of as a whole formula by mass gap around with described the second groove, described multiple the second stress sensitive resistance connects into acceleration detection circuit, described pressure detection circuit and acceleration detection circuit are drawn outside monocrystalline silicon piece by lead-in wire and pad.
As the further optimization of technique scheme, the gas entrance hole of described glass film plates is covered and is positioned at the center position of described the first induction silicon fiml by the first cavity.
As the further optimization of technique scheme, described pressure detection circuit is that the first stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
As the further optimization of technique scheme, described acceleration detection circuit is that the second stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
As the further optimization of technique scheme, described monocrystalline silicon piece is the monocrystalline silicon piece of N-type (100) crystal face.
As the further optimization of technique scheme, described mass protrudes downwards and the big up and small down trapezoid block of described mass.
As the further optimization of technique scheme, described monocrystalline silicon piece and described glass cover-plate and glass film plates all pass through anode linkage.
The present invention also provides the method for making of the mutually integrated MEMS chip of above-mentioned air pressure and acceleration transducer, comprises the steps:
(1) twin polishing monocrystalline silicon piece cleaning; Adopt photoresist to do mask, adopt the method for the light boron of Implantation on monocrystalline silicon piece, to make the resistor stripe of multiple the first stress sensitive resistance and multiple the second stress sensitive resistance, resistor stripe is along <111> crystal orientation;
(2) on monocrystalline silicon piece top, be concentrated boron area with the anode linkage region of glass cover-plate and two end regions of every resistor stripe, adopt the method for Implantation to inject dense boron to concentrated boron area and form dense boron wire;
(3) adopt Low Pressure Chemical Vapor Deposition successively at monocrystalline silicon piece apical growth layer of silicon dioxide layer and one deck silicon nitride layer as insulation course;
(4) take photoresist as mask, adopt reactive ion etching process, remove silicon nitride layer and silicon dioxide layer in ohmic contact regions, fairlead and the anode linkage region on monocrystalline silicon piece top; Then splash-proofing sputtering metal aluminium, take photoresist as mask, the unnecessary aluminium of wet etching, forms lead-in wire and pad;
(5) adopt the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece, form required the first induction silicon fiml, mass thereby make, detailed process is as follows:
(5.1) adopt equally the method for Low Pressure Chemical Vapor Deposition grow successively in monocrystalline silicon piece bottom silicon dioxide layer and silicon nitride layer, take photoresist as mask, the silicon nitride that adopts reactive ion etching process to remove required the first cavity and the second cavity institute corresponding region only leaves silicon dioxide layer; Then in silicon dioxide layer corresponding to the second cavity, take photoresist as mask, adopt reactive ion etching process to remove the silicon dioxide in four rectangular strip regions that are positioned at mass surrounding, monocrystalline silicon piece is exposed in four rectangular strip regions that are positioned at mass surrounding, forms one time mask;
(5.2) utilize mask one time, adopt Tetramethylammonium hydroxide or potassium hydroxide to carry out anisotropic etch to monocrystalline silicon piece, corrosion rate is by concentration and the temperature adjusting of Tetramethylammonium hydroxide or potassium hydroxide corrosive liquid, make four rectangular strip regions that are positioned at mass surrounding form V-type groove, the degree of depth no longer increases; The first corresponding region of cavity is because the existence that has silicon dioxide is not corroded;
(5.3) silicon dioxide layer that adopts hydrofluorite corrosion primary mask to expose makes this region expose monocrystalline silicon piece, forms secondary mask, the region without required the first cavity and the second cavity on the corresponding monocrystalline silicon piece of masked areas of secondary mask; Utilize secondary mask, adopt Tetramethylammonium hydroxide or potassium hydroxide to continue monocrystalline silicon piece to carry out anisotropic etch, thereby form the first cavity of baroceptor, the bottom surface of the first cavity forms a plane, respond to silicon fiml as first of baroceptor, and formed the mass of acceleration transducer projection;
(6) silicon nitride layer of employing reactive ion etching process etching single crystal silicon chip bottom, then floats silicon dioxide layer with hydrofluorite, thereby realizes the Direct Bonding of glass and monocrystalline silicon piece;
(7) adopt gas entrance hole corresponding to machining process processed glass base plate, then by monocrystalline silicon piece and glass film plates anode linkage, the gas entrance hole of glass film plates and the first cavity of monocrystalline silicon piece are communicated;
(8) adopt inductively coupled plasma etching technics to discharge mass, the silicon thin film being around connected with mass just part hollow out forms elastic cantilever girder construction;
(9) adopt corresponding the first groove and the second groove of machining process processed glass cover plate, then by monocrystalline silicon piece and glass cover-plate anode linkage, make the first groove cover the first induction silicon fiml completely, the second groove covers mass and elastic cantilever completely, and the second groove is communicated with the second vacuum chamber of the sealing of as a whole formula with the second cavity.
As the preferred implementation of the method for making of the mutually integrated MEMS chip of above-mentioned air pressure and acceleration transducer, after described glass film plates and monocrystalline silicon piece bonding, its gas entrance hole is covered and is positioned at the center position of described the first induction silicon fiml by described the first cavity.
As the preferred implementation of the method for making of the mutually integrated MEMS chip of above-mentioned air pressure and acceleration transducer, described monocrystalline silicon piece is the monocrystalline silicon piece of N-type (100) crystal face.
The present invention has the following advantages compared to existing technology:
The MEMS chip that air pressure provided by the invention and acceleration transducer are mutually integrated, adopt unique glass-silicon sheet-glass sandwich structure, adopt same set of technique to be integrated in a chip baroceptor and acceleration transducer, size is little, compact conformation, internal circuit is drawn by lead-in wire and pad, is convenient to ASIC Bonding and is packaged into one chip; For TPMS system, can complete the detection to air pressure and the each parameter of acceleration simultaneously, adopt monocrystalline silicon piece, highly sensitive, reliability and good stability.The method for making of this chip adopts the back of the body chamber of unique secondary masking method wet etching monocrystalline silicon piece, form the first induction silicon fiml of baroceptor and mass and the elastic cantilever of acceleration transducer simultaneously, can be formed directly in the mass of larger quality, without the extra quality that adopts copper facing or other modes to increase mass, adopt same set of technique to complete the making of baroceptor and acceleration transducer simultaneously, and manufacture craft is simple, easily control, cost is low, is suitable for producing in enormous quantities.
Accompanying drawing explanation
Fig. 1 is air pressure and the mutually integrated MEMS chip surface structure schematic diagram of acceleration transducer.
Fig. 2 is air pressure and the front vertical profile structural representation of the mutually integrated MEMS chip of acceleration transducer.
Fig. 3 is pressure detection circuit and acceleration detection circuit diagram.
Fig. 4 is glass cover-plate perspective view.
Fig. 5 is glass film plates perspective view.
Fig. 6 is pressure detection circuit and the acceleration detection circuit layout on monocrystalline silicon piece top.
Fig. 7 is the mask that secondary mask method adopts.
Fig. 8 is the secondary mask that secondary mask method adopts.
Fig. 9 adopts the monocrystalline silicon piece perspective view obtaining after secondary mask method.
Embodiment
Below embodiments of the invention are elaborated, the present embodiment is implemented under take technical solution of the present invention as prerequisite, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Referring to Fig. 1, Fig. 2, Fig. 4, Fig. 5, Fig. 9, the MEMS chip that a kind of air pressure provided by the invention and acceleration transducer are mutually integrated, comprise as the monocrystalline silicon piece 2 of main body and lay respectively at glass cover-plate 1 and the glass film plates 3 of monocrystalline silicon piece 2 tops and bottom, monocrystalline silicon piece 2 is the monocrystalline silicon piece of N-type (100) crystal face, and monocrystalline silicon piece 2 all passes through anode linkage with glass cover-plate 1 and glass film plates 3.On monocrystalline silicon piece 2, be integrated with baroceptor and acceleration transducer, wherein,
Baroceptor comprise be positioned at monocrystalline silicon piece 2 tops the first induction silicon fiml 21, be multiplely positioned at the first stress sensitive resistance R 1 on the first induction silicon fiml 21 and upwards embed the first groove 11 of glass cover-plate 1 from glass cover-plate 1 bottom, the first groove 11 is positioned on the first induction silicon fiml 21 and can covers the first induction silicon fiml 21 completely, the top of the first groove 11 and monocrystalline silicon piece 2 forms the first vacuum chamber of a sealing, and monocrystalline silicon piece 2 is provided with the first cavity 24 of lower ending opening under the first sense film 21.Glass film plates 3 is provided with the gas entrance hole 31 of up/down perforation, gas entrance hole 31 is communicated with the first cavity 24, the gas entrance hole 31 of glass film plates 3 is covered and is positioned at the center position of the first induction silicon fiml 21 by the first cavity 24, thereby has guaranteed the accuracy that baroceptor detects.Multiple the first stress sensitive resistance R 1 connect into pressure detection circuit;
Referring to Fig. 3, Fig. 6, pressure detection circuit is that the first stress sensitive resistance R 1 of the resistances such as four connects to form Wheatstone bridge.Acceleration detection circuit is that the second stress sensitive resistance R 2 of the resistances such as four connects to form Wheatstone bridge.Pressure detection circuit and acceleration detection circuit are drawn outside monocrystalline silicon piece 2 by lead-in wire and pad 26.In Fig. 3,4 pin are the positive pole of power supply input, and 2 pin and 6 pin are respectively the negative pole of power supply input; Four the first stress sensitive resistance R 1 of baroceptor are distributed on the first induction silicon fiml 21, in the time there is pressure reduction in the both sides of the first induction silicon fiml 21, there is deformation in the first induction silicon fiml 21, according to the piezoresistive effect of silicon, the resistance of four the first stress sensitive resistance R 1 will change, and can extrapolate the size of air pressure by measuring the voltage difference of 1 pin and 3 pin.Four the second stress sensitive resistance R 2 of acceleration transducer are distributed on elastic cantilever 22, in the time there is acceleration, mass 23 is stressed makes elastic cantilever 22 flexural deformations, according to the piezoresistive effect of silicon, the resistance of four the second stress sensitive resistance R 2 will change, and can extrapolate the size of acceleration by measuring the voltage difference of 5 pin and 7 pin.
The MEMS chip that air pressure provided by the invention and acceleration transducer are mutually integrated, adopt unique glass-silicon sheet-glass sandwich structure, adopt same set of technique to be integrated in a chip baroceptor and acceleration transducer, size is little, compact conformation, internal circuit is drawn by lead-in wire and pad 26, is convenient to ASIC Bonding and is packaged into one chip; For TPMS system, can complete the detection to air pressure and the each parameter of acceleration simultaneously, adopt monocrystalline silicon piece 2, highly sensitive, reliability and good stability.
The present invention also provides the method for making of the mutually integrated MEMS chip of above-mentioned air pressure and acceleration transducer, comprises the steps:
(1) monocrystalline silicon piece 2 is preferentially chosen the monocrystalline silicon piece of N-type (100) crystal face, and twin polishing monocrystalline silicon piece 2 also cleans; Adopt photoresist to do mask, adopt the method for the light boron of Implantation on monocrystalline silicon piece 2, to make the resistor stripe of multiple the first stress sensitive resistance R 1 and multiple the second stress sensitive resistance R 2 to the resistor stripe position in Fig. 6, resistor stripe is along <111> crystal orientation;
(2) on monocrystalline silicon piece 2 tops, be concentrated boron area with the anode linkage region of glass cover-plate 1 and two end regions of every resistor stripe, adopt the method for Implantation to inject dense boron to concentrated boron area and form dense boron wire.Injecting dense boron at the two ends of resistor stripe is to form Ohmic contact in order to realize between aluminium electrode and resistor stripe; Because the anode linkage place of glass cover-plate and monocrystalline silicon piece can not arrange aluminum conductor, form dense boron wire so silicon chip is carried out to dense boron doping in this region.
(3) adopt Low Pressure Chemical Vapor Deposition successively at monocrystalline silicon piece 2 apical growth layer of silicon dioxide layers and one deck silicon nitride layer as insulation course;
(4) take photoresist as mask, adopt reactive ion etching process, remove silicon nitride layer and silicon dioxide layer in ohmic contact regions, fairlead and the anode linkage region on monocrystalline silicon piece 2 tops; Then splash-proofing sputtering metal aluminium, take photoresist as mask, the unnecessary aluminium of wet etching, forms lead-in wire and pad 26;
(5) adopt the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece 2, form required the first induction silicon fiml 21, mass 23 thereby make, detailed process is as follows:
(5.1) adopt equally the method for Low Pressure Chemical Vapor Deposition grow successively in monocrystalline silicon piece 2 bottoms silicon dioxide layer and silicon nitride layer, referring to Fig. 7, take photoresist as mask, the silicon nitride that adopts reactive ion etching process to remove the first required cavity 24 and second 25 corresponding regions of cavity only leaves silicon dioxide layer; Then in the silicon dioxide layer of the second cavity 25 correspondences, take photoresist as mask, adopt reactive ion etching process to remove the silicon dioxide in four rectangular strip 27 regions that are positioned at required mass 23 surroundings, monocrystalline silicon piece 2 is exposed in four rectangular strip 27 regions that are positioned at mass 23 surroundings, form without masked areas, thereby form a mask;
(5.2) utilize mask one time, adopt Tetramethylammonium hydroxide or potassium hydroxide to carry out anisotropic etch to monocrystalline silicon piece 2, corrosion rate is by concentration and the temperature adjusting of Tetramethylammonium hydroxide or potassium hydroxide corrosive liquid, four rectangular strip 27 regions (be Fig. 7 without masked areas) that make to be arranged in mass 23 surroundings form V-type groove, and the degree of depth no longer increases; The first corresponding region of cavity 24 is because the existence that has silicon dioxide is not corroded;
(5.3) referring to Fig. 8, the silicon dioxide layer that adopts hydrofluorite corrosion primary mask to expose makes this region expose monocrystalline silicon piece 2, form secondary mask, the region without required the first cavity 24 and the second cavity 25 on the corresponding monocrystalline silicon piece 2 of masked areas of secondary mask in Fig. 8; Utilize secondary mask, adopt Tetramethylammonium hydroxide or potassium hydroxide to continue monocrystalline silicon piece 2 to carry out anisotropic etch, thereby form the first cavity 24 of baroceptor, the bottom surface of the first cavity 24 forms a plane, respond to silicon fiml 21 as first of baroceptor, and formed the mass 23 of acceleration transducer projection; Adopt behind the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece 2, the spatial structure of the monocrystalline silicon piece 2 obtaining as shown in Figure 9.
(6) silicon nitride layer of employing reactive ion etching process etching single crystal silicon chip 2 bottoms, then floats silicon dioxide layer with hydrofluorite, thereby realizes the Direct Bonding of glass and monocrystalline silicon piece 2;
(7) the gas entrance hole 31 of employing machining process processed glass base plate 3 correspondences, then, by monocrystalline silicon piece 2 and glass film plates 3 anode linkages, communicates the gas entrance hole 31 of glass film plates 3 and the first cavity 24 of monocrystalline silicon piece 2; As preferably, after glass film plates 3 and monocrystalline silicon piece 2 bondings, its gas entrance hole 31 is covered and is positioned at the center position of the first induction silicon fiml 21 completely by the first cavity 24;
(8) adopt inductively coupled plasma etching technics to discharge mass 23, the silicon thin film being around connected with mass 23 just part hollow out forms elastic cantilever 22 structures;
(9) the first groove 11 and second groove 12 of employing machining process processed glass cover plate 1 correspondence, then by monocrystalline silicon piece 2 and glass cover-plate 1 anode linkage, make the first groove 11 cover the first induction silicon fiml 21 completely, the second groove 12 covers mass 23 and elastic cantilever 22, the second grooves 12 are communicated with the sealing of as a whole formula the second vacuum chamber with the second cavity 25 completely.
The method for making of this chip adopts the back of the body chamber of unique secondary masking method wet etching monocrystalline silicon piece 2, form the first induction silicon fiml 21 of baroceptor and mass 23 and the elastic cantilever 22 of acceleration transducer simultaneously, can be formed directly in the mass 23 of larger quality, without the extra quality that adopts copper facing or other modes to increase mass 23, adopt same set of technique to complete the making of baroceptor and acceleration transducer simultaneously, and manufacture craft is simple, easily control, cost is low, is suitable for producing in enormous quantities.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the mutually integrated MEMS chip of air pressure and acceleration transducer, it is characterized in that: comprise as the monocrystalline silicon piece of main body and lay respectively at glass cover-plate and the glass film plates of described monocrystalline silicon piece top and bottom, on described monocrystalline silicon piece, be integrated with baroceptor and acceleration transducer, wherein
Described baroceptor comprises the first induction silicon fiml that is positioned at monocrystalline silicon piece top, multiple the first stress sensitive resistance being positioned on described the first induction silicon fiml, and upwards embed the first groove in described glass cover-plate from described glass cover-plate bottom, described the first groove is positioned on described the first induction silicon fiml and can covers described the first induction silicon fiml completely, the top of described the first groove and described monocrystalline silicon piece forms the first vacuum chamber of a sealing, described monocrystalline silicon piece is provided with the first cavity of lower ending opening under the first sense film, described glass film plates is provided with the gas entrance hole of up/down perforation, described gas entrance hole is communicated with described the first cavity, described multiple the first stress sensitive resistance connects into pressure detection circuit,
Described acceleration transducer comprises mass, the elastic cantilever being connected with described mass one end, be positioned at multiple the second stress sensitive resistance on described elastic cantilever, and upwards embed the second groove in described glass cover-plate from described glass cover-plate bottom, described elastic cantilever is positioned at described monocrystalline silicon piece top, described the second groove is positioned on described mass and elastic cantilever and can covers described mass and elastic cantilever completely, described monocrystalline silicon piece is provided with the second cavity of lower ending opening under mass and elastic cantilever, the bottom of described the second cavity is airtight through described glass film plates, described the second cavity is communicated with the second vacuum chamber of the sealing of as a whole formula by mass gap around with described the second groove, described multiple the second stress sensitive resistance connects into acceleration detection circuit, described pressure detection circuit and acceleration detection circuit are drawn outside monocrystalline silicon piece by lead-in wire and pad.
2. the mutually integrated MEMS chip of air pressure according to claim 1 and acceleration transducer, is characterized in that: the gas entrance hole of described glass film plates is covered and be positioned at the center position of described the first induction silicon fiml by the first cavity.
3. the mutually integrated MEMS chip of air pressure according to claim 1 and acceleration transducer, is characterized in that: described pressure detection circuit is that the first stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
4. the mutually integrated MEMS chip of air pressure according to claim 1 and acceleration transducer, is characterized in that: described acceleration detection circuit is that the second stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
5. the mutually integrated MEMS chip of air pressure according to claim 1 and acceleration transducer, is characterized in that: described monocrystalline silicon piece is the monocrystalline silicon piece of N-type (100) crystal face.
6. according to the mutually integrated MEMS chip of the arbitrary described air pressure of claim 1 to 5 and acceleration transducer, it is characterized in that: described mass protrudes downwards and the big up and small down trapezoid block of described mass.
7. the mutually integrated MEMS chip of air pressure according to claim 6 and acceleration transducer, is characterized in that: described monocrystalline silicon piece and described glass cover-plate and glass film plates all pass through anode linkage.
8. according to the method for making of the mutually integrated MEMS chip of the arbitrary described air pressure of claim 1 to 7 and acceleration transducer, it is characterized in that, comprise the steps:
(1) twin polishing monocrystalline silicon piece cleaning; Adopt photoresist to do mask, adopt the method for the light boron of Implantation on monocrystalline silicon piece, to make the resistor stripe of multiple the first stress sensitive resistance and multiple the second stress sensitive resistance, resistor stripe is along <111> crystal orientation;
(2) on monocrystalline silicon piece top, be concentrated boron area with the anode linkage region of glass cover-plate and two end regions of every resistor stripe, adopt the method for Implantation to inject dense boron to concentrated boron area and form dense boron wire;
(3) adopt Low Pressure Chemical Vapor Deposition successively at monocrystalline silicon piece apical growth layer of silicon dioxide layer and one deck silicon nitride layer as insulation course;
(4) take photoresist as mask, adopt reactive ion etching process, remove silicon nitride layer and silicon dioxide layer in ohmic contact regions, fairlead and the anode linkage region on monocrystalline silicon piece top; Then splash-proofing sputtering metal aluminium, take photoresist as mask, the unnecessary aluminium of wet etching, forms lead-in wire and pad;
(5) adopt the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece, form required the first induction silicon fiml, mass thereby make, detailed process is as follows:
(5.1) adopt equally the method for Low Pressure Chemical Vapor Deposition grow successively in monocrystalline silicon piece bottom silicon dioxide layer and silicon nitride layer, take photoresist as mask, the silicon nitride that adopts reactive ion etching process to remove required the first cavity and the second cavity institute corresponding region only leaves silicon dioxide layer; Then in silicon dioxide layer corresponding to the second cavity, take photoresist as mask, adopt reactive ion etching process to remove the silicon dioxide in four rectangular strip regions that are positioned at mass surrounding, monocrystalline silicon piece is exposed in four rectangular strip regions that are positioned at mass surrounding, forms one time mask;
(5.2) utilize mask one time, adopt Tetramethylammonium hydroxide or potassium hydroxide to carry out anisotropic etch to monocrystalline silicon piece, corrosion rate is by concentration and the temperature adjusting of Tetramethylammonium hydroxide or potassium hydroxide corrosive liquid, make four rectangular strip regions that are positioned at mass surrounding form V-type groove, the degree of depth no longer increases; The first corresponding region of cavity is because the existence that has silicon dioxide is not corroded;
(5.3) silicon dioxide layer that adopts hydrofluorite corrosion primary mask to expose makes this region expose monocrystalline silicon piece, forms secondary mask, the region without required the first cavity and the second cavity on the corresponding monocrystalline silicon piece of masked areas of secondary mask; Utilize secondary mask, adopt Tetramethylammonium hydroxide or potassium hydroxide to continue monocrystalline silicon piece to carry out anisotropic etch, thereby form the first cavity of baroceptor, the bottom surface of the first cavity forms a plane, respond to silicon fiml as first of baroceptor, and formed the mass of acceleration transducer projection simultaneously;
(6) silicon nitride layer of employing reactive ion etching process etching single crystal silicon chip bottom, then floats silicon dioxide layer with hydrofluorite, thereby realizes the Direct Bonding of glass and monocrystalline silicon piece;
(7) adopt gas entrance hole corresponding to machining process processed glass base plate, then by monocrystalline silicon piece and glass film plates anode linkage, the gas entrance hole of glass film plates and the first cavity of monocrystalline silicon piece are communicated;
(8) adopt inductively coupled plasma etching technics to discharge mass, the silicon thin film being around connected with mass just part hollow out forms elastic cantilever girder construction;
(9) adopt corresponding the first groove and the second groove of machining process processed glass cover plate, then by monocrystalline silicon piece and glass cover-plate anode linkage, make the first groove cover the first induction silicon fiml completely, the second groove covers mass and elastic cantilever completely, and the second groove is communicated with the second vacuum chamber of the sealing of as a whole formula with the second cavity.
9. the method for making of the mutually integrated MEMS chip of air pressure according to claim 8 and acceleration transducer, it is characterized in that, after described glass film plates and monocrystalline silicon piece bonding, its gas entrance hole is covered and is positioned at the center position of described the first induction silicon fiml by described the first cavity.
10. the method for making of the mutually integrated MEMS chip of air pressure according to claim 8 and acceleration transducer, is characterized in that, described monocrystalline silicon piece is the monocrystalline silicon piece of N-type (100) crystal face.
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| CN105181231A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Pressure sensor of packaging structure and preparation method thereof |
| CN105181011A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Pressure and acceleration two-in-one sensor of packaging structure and preparation method thereof |
| CN105776122A (en) * | 2014-11-13 | 2016-07-20 | 财团法人工业技术研究院 | Micro-electromechanical device with multiple airtight cavities and manufacturing method thereof |
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| CN109682711A (en) * | 2019-01-24 | 2019-04-26 | 中国科学院上海微系统与信息技术研究所 | The chip and preparation method thereof of association direct in-situ characterization is imitated for TEM structure |
| CN109782022B (en) * | 2019-03-13 | 2020-09-01 | 北京航空航天大学 | Graphene resonant optical fiber accelerometer based on pressure sensitivity |
| CN109782022A (en) * | 2019-03-13 | 2019-05-21 | 北京航空航天大学 | One kind being based on pressure-sensitive graphene resonance type optical fiber accelerometer |
| WO2021023251A1 (en) * | 2019-08-06 | 2021-02-11 | 西人马联合测控（泉州）科技有限公司 | Mems structure, mems structure manufacturing method, and tire pressure sensor |
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| CN112903087A (en) * | 2021-01-18 | 2021-06-04 | 中国兵器工业集团第二一四研究所苏州研发中心 | MEMS monolithic integration standard vector composite acoustic wave sensor and processing method thereof |
| CN113776721A (en) * | 2021-09-07 | 2021-12-10 | 上海韦尔半导体股份有限公司 | Sensor integrated chip and manufacturing method thereof |
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