CN103745917A - Method for preparing nanostructure on surface of monocrystalline Si substrate under control of electric field - Google Patents
Method for preparing nanostructure on surface of monocrystalline Si substrate under control of electric field Download PDFInfo
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- CN103745917A CN103745917A CN201310751681.0A CN201310751681A CN103745917A CN 103745917 A CN103745917 A CN 103745917A CN 201310751681 A CN201310751681 A CN 201310751681A CN 103745917 A CN103745917 A CN 103745917A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The invention discloses a method for preparing a nanostructure on the surface of a monocrystalline Si substrate under the control of an electric field, and belongs to the technical field of nanometer materials. The method is implemented by the following steps of (1) selecting an n-type Si wafer (111), and cutting the n-type Si wafer into a rectangular monocrystalline Si substrate; (2) fixing the monocrystalline Si substrate on a vacuum chamber sample stage of a molecular beam epitaxy chamber, heating the monocrystalline Si substrate under a vacuum condition, and cleaning the surface of the monocrystalline Si substrate; (3) depositing Au atoms on the surface of the monocrystalline Si substrate to obtain surface structures with different reconstructions; (4) depositing In in the center of the monocrystalline Si substrate to obtain a rectangular thin film sheet layer; (5) applying a direct current electric field to drive electron migration, and controlling the diffusion of electron migration to obtain a quasi-two-dimensional metal nanostructure. According to the method, the surface can be atomically worked by generating directional migration diffusion on a heterogeneous metal film layer pre-deposited on the Si surface under the action of the electric field to uniformly spread the original film layer without damage to the surface appearance and effectively eliminate certain structural defects, for example, to flatten common three-dimensional island structures on the surface of the thin film.
Description
Technical field
The invention belongs to technical field of nano material, particularly a kind of electric field controls is prepared the method for nanostructure on monocrystalline silicon substrate surface.
Background technology
Under outer field action, the travel motion of surface of solids atom is a underlying issue with extensive use background.While applying a DC electric field that is parallel to substrate surface in semiconductor silicon substrate, the upper a series of Electromigration dispersion phenomenons that occur in its surface are exactly a typical example, have very important physical significance.As everyone knows, as most important material in semi-conductor industry, silicon and various silica-based micro-/micro-nano structure device formed the foundation stone of hyundai electronics and information industry; And the device of various nanostructures and practical all needs are based upon on the basis of the control growth of nano material and the clarification of related physical effect.Therefore, the Changing Pattern of material surface nanoscale pattern and architectural feature under further investigation outer field action, and then realize the manipulation of nanostructure has been become to the key in many nanometer technology application by macroscopical External Force Acting.The scanning tunnel microscope (STM) of take is instrument, and effects on surface atom or elementide apply longitudinal electric field and handle and mobile to form various small nanostructures, be one and have much representational mature technology, but it comprises more polyatom (as 10 at structure
4～10
6during large-size nanostructure individual atom) and inapplicable; Although and the self-assembled growth technology being widely known by the people is equally suitable for the nanostructure that preparation comprises a large amount of atoms, be difficult to realize the finely regulating of its partial structurtes.
Summary of the invention
For existing electric field controls, prepare the problems referred to above that nanostructure exists technically, the invention provides a kind of electric field controls and on monocrystalline silicon substrate surface, prepare the method for nanostructure, the effect by DC electric field in horizontal direction makes the even film layer of monocrystalline silicon substrate expand to form micro-nanometer ordered structure.
The method that a kind of electric field controls of the present invention is prepared nanostructure on monocrystalline silicon substrate surface is carried out according to the following steps:
1, selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and cut, make rectangular monocrystalline silicon substrate;
2, monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber; In pressure in vacuum tank≤2 * 10
-8under the UHV condition of Pa, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 2～6s, clean its surface;
3, by evaporation source, to surface, pass through clean 0.1～1 layer of Au atom of monocrystalline silicon substrate surface deposition, on monocrystalline silicon substrate surface, obtain the gold absorption monocrystalline silicon surface structure with different reconstruct; During deposition, control gas pressure in vacuum≤1 * 10
-7pa, monocrystalline silicon substrate temperature is 873 ± 10K; The gold absorption monocrystalline silicon surface structure of described different reconstruct refers to 7 * 7, (7 * 7+5 * 2), 5 * 2, (5 * 2+ α-√, 3 * √ 3), α-√ 3 * √ 3 or β-√ 3 * √ 3 surface textures;
4, metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML;
5, along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1～0.5A, the time that applies electric current is 1～60min, while applying electric field, the temperature of monocrystalline silicon substrate is 630～763K, on monocrystalline silicon substrate surface, obtains accurate two-dimensional metallic nanostructure.
In said method, the window of mask is rectangle or slit, and width is at 50～200 μ m, mask material selection metal tantalum.
In said method, the monoatomic layer (monolayer, ML) of plated metal number represents the coverage of metal, and a monoatomic layer (ML) comprises 7.8 * 10 corresponding to upper every square centimeter of surface
14individual atom.
It is to utilize its destructiveness that nano gap structure is prepared in traditional electrical migration, and method provided by the invention belongs to the heterogeneous electromigration of semiconductor surface, is that the effect by DC electric field in horizontal direction makes even film layer expand to form micro-nanometer ordered structure.Be different from and occur in the traditional electrical migration that causes metal or alloy thin-film material damage inactivation in the small interconnected lead-in wire of integrated circuit, semiconductor surface electromigration is the transport of substances phenomenon of a class uniqueness, it results from the displacement of surface atom, and effects on surface pattern has important influence.According to the feature of migration thing, can be divided into two classes again: one, for clean silicon vincial faces surface, when surface only exists the silicon adatom of homogeneity, DC electric field and electric current can form complicated surface topography (comprising regular ledge structure, step bundle and step serpentine structure) according to the difference of action direction; Since the reported first such as A.V.Latyshev are at vincial faces Si(111) since direct current causes on face ledge structure unsteadiness, a large amount of work mainly concentrates on the phenomenological investigation of this phenomenon and theoretical modeling in the world, its objective is the governing factor of finding these surface step structures, the preferential nuclearing centre when step of expecting these particular dimensions, ordered arrangement can be used as thin-film material epitaxial growth or as the template of synthesis of nano structure; Once someone utilized this characteristic to carry out the experiment of grown quantum line and quantum dot on vicinal face, but due to monatomic step shape very irregular, was difficult to obtain quantum wire and the quantum dot of ordered arrangement; It two is surface heterogeneous medium electromigration, it refers to when the semiconductor silicon based bottom application to clean adds horizontal direction DC electric field, to under electric field action, there is directed diffusion mobility in the dissimilar metal rete that is deposited in advance silicon face, the result of diffusion is original even film layer broadening and surface topography is not destroyed, and by atom at surperficial travel motion, can also effectively eliminate some fault of construction, as make the ubiquitous three-dimensional island structure of film surface be tending towards leveling, realize atom level Surface Machining.
Electric field controls of the present invention is prepared nanostructure method on monocrystalline silicon substrate surface can directly see through mask deposit film on clean monocrystalline silicon substrate, also can be first at a certain metal of whole monocrystalline silicon substrate surface deposition (as gold, silver or copper), and then utilize mask deposition to form laminate film
Fixing by tantalum metal fixture for silicon chip two ends (simultaneously also as electrode), the DC electric field applying for driving Electromigration dispersion in silicon base is along horizontal direction, and this makes the diaphragm that is originally deposited as regular shape can develop on request different size, pattern and surface texture; Regulation and control by electromigration parameter also can obtain monometallic, alloy or the silicide nano-structure with certain ingredients.
Under the character condition of known substrate materials and Coating Materials, accurately control size of current, orientation and the time that applies surperficial DC electric field, utilize the feature of Electromigration dispersion, reach mobile as required object; The gold atom of deposition 0.1～1 individual layer, forms different surperficial mobile platforms in advance, and the diffusion mobility speed of other metal depositing on this can be accurately controlled.
The field emission scanning electron microscope that utilization of the present invention and molecular beam epitaxial device integrate and reflection high energy electron diffraction device, when energising drives Electromigration dispersion, the variation of can Continuous Observation measuring sample surface morphology and surface texture, the line item of going forward side by side.After nanostructure forms, according to institute's outfit electron spectrometer situation, can carry out to this nanostructure the analysis and characterization of chemical analysis, valence state and the electronic structure of original position or ex situ.
Accompanying drawing explanation
Fig. 1 is Au atom coverage and temperature (different reconstructing surface structure) graph of relation;
Fig. 2 is that the electric field controls in the embodiment of the present invention is prepared nanostructure apparatus structure schematic diagram on monocrystalline silicon substrate surface;
In figure, 1, vacuum chamber, 2, electron gun system, 3, monocrystalline silicon substrate, 4, secondary electron detector, 5, linear movement operating mechanism, 6, baffle plate, 7, evaporation source, 8, observation, control and register system, 9, optical fiber, 10, diffraction electron beam, 11, mask;
Fig. 3 is monocrystalline silicon substrate and the arrangement of electrodes schematic diagram in the embodiment of the present invention;
In figure, 3, monocrystalline silicon substrate, 12, mask window, 13, tantalum electrode;
Fig. 4 is the structural evolution process scanning electron microscopic observation figure that the indium metal (In) of two monoatomic layer thickness (2.0ML) in the embodiment of the present invention 1 is driven by DC electric field at clean Si (111) silicon face; In figure, (a) initial film, (b) apply 0.1A function of current 1min, underlayer temperature 630K, (c) applies 0.1A function of current 10min, (d) applies 0.1A function of current 30min, (e) apply 0.3A function of current 3min, underlayer temperature 763K, (f) applies 0.3A function of current 10min, (g) applies 0.3A function of current 20min;
Fig. 5 is that the indium metal (In) of two monoatomic layers (2.0ML) thickness in the embodiment of the present invention 2 has covered the Si(111 of 1.0 monoatomic layers gold (Au) in deposition in advance) the structural evolution process electron micrograph that driven by DC electric field of-β-√ 3 * √ 3-Au surface; It is identical that the preparation method of initial film and (a) in embodiment 1 scheme, and (m) applies 0.1A function of current 1min, and underlayer temperature 630K, (n) applies 0.1A function of current 4min.
Fig. 6 is that the indium metal (In) of two monoatomic layers (2.0ML) thickness in the embodiment of the present invention 3 has covered the Si(111 of 0.5 monoatomic layer gold (Au) in deposition in advance) the structural evolution process electron micrograph that driven by DC electric field of-5 * 2-Au surface; It is identical that the preparation method of initial film and (a) in embodiment 1 scheme, and (x) applies 0.1A function of current 1min, underlayer temperature 630K, (y) apply 0.1A function of current 10min, 630K, (z) continues to apply 0.2A electric current and continues 10min, underlayer temperature 763K.
Fig. 7 is that the indium metal (In) of two monoatomic layers (2.0ML) thickness in the embodiment of the present invention 4 has covered the Si(111 of 0.7 monoatomic layer gold (Au) in deposition in advance)-structural evolution process electron micrograph that (5 * 2+ α-√, 3 * √ 3)-Au surface drives by DC electric field; It is identical that the preparation method of initial film and (a) in embodiment 1 scheme, and (u) applies 0.1A function of current 5min, and underlayer temperature 630K, (v) applies 0.1A function of current 10min, and 630K (w) applies 0.1A electric current and continues to 30min, 630K.
Embodiment
The MBE chamber adopting in the embodiment of the present invention is the MBE chamber that Japanese vacuum (ULVAC) is manufactured.
The scope adopting in the embodiment of the present invention is the S – of Hitachi 4200 type field emission scanning electron microscopes (FE – SEM) and microprobe type reflection high energy electron diffraction (μ-probe RHEED) device.
The linear motion operating mechanism adopting in the embodiment of the present invention is the matching used linear motion operating mechanism of MBE chamber that ULVAC manufactures.
The weight purity 99.9999% of the metal In evaporation source adopting in the embodiment of the present invention.
The weight purity 99.9999% of the Au evaporation source adopting in the embodiment of the present invention.
The weight purity 99.9999% of metal tantalum in the embodiment of the present invention.
Electric field controls in the embodiment of the present invention at monocrystalline silicon substrate surface preparation nanostructure device as shown in Figure 2, comprise vacuum chamber 1, electron gun system 2, secondary electron detector 4, linear movement operating mechanism 5, baffle plate 6, evaporation source 7, observation, control and register system 8, optical fiber 9, diffraction electron beam 10, mask 11;
Selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and be cut into rectangular monocrystalline silicon substrate;
Monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber, in pressure in vacuum tank≤2 * 10
-8under Pa condition, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 2s, clean its surface; Now obtain clean Si(111) 7 * 7 surfaces;
Metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML; The window of mask is rectangle or slit, and width is at 150 μ m, mask material selection tantalum; When evaporation plating indium film, with reflected high energy electron diffraction device, monitor at any time diffraction spot style, the coverage that just shows indium when there is the diffraction pattern of √ 3 * √ 3 surface reconstructions is just 1/3ML (1/3rd monoatomic layers), and records this time; According to the speed of evaporation indium and time, just can accurately control the coverage size of deposition indium film, when evaporation rate is identical, when evaporation time is 6 times of time of coverage 1/3ML, both having obtained coverage is the indium film of 2.0ML;
Along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1～0.3A, the time that applies electric current is 1～20min, while applying electric field, the temperature of monocrystalline silicon substrate is 630K～763K, on monocrystalline silicon substrate surface, obtains accurate two-dimensional metallic nanostructure; The structural evolution process being driven by DC electric field as shown in Figure 4.
Electric field controls is prepared nanostructure device with embodiment 1 on monocrystalline silicon substrate surface;
Selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and be cut into rectangular monocrystalline silicon substrate;
Monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber, in pressure in vacuum tank≤2 * 10
-8under Pa condition, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 2s, clean its surface; Now obtain clean Si(111) 7 * 7 surfaces;
By evaporation source, to the clean 1.0 layers of Au atom of monocrystalline silicon substrate surface deposition of surface process, on monocrystalline silicon substrate surface, obtain β-√ 3 * √ 3 gold medals absorption monocrystalline silicon surface structures; During deposition, control gas pressure in vacuum≤1 * 10
-7pa, monocrystalline silicon substrate temperature is 873 ± 10K;
Metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML; The window of mask is rectangle or slit, and width is at 150 μ m, mask material selection tantalum; When evaporation plating indium film, with reflected high energy electron diffraction device, monitor at any time diffraction spot style, the coverage that just shows indium when there is the diffraction pattern of √ 3 * √ 3 surface reconstructions is just 1/3ML (1/3rd monoatomic layers), and records this time; According to the speed of evaporation indium and time, just can accurately control the coverage size of deposition indium film, when evaporation rate is identical, when evaporation time is 6 times of time of coverage 1/3ML, both having obtained coverage is the indium film of 2.0ML;
Along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1A, the time that applies electric current is 1～4min, while applying electric field, the temperature of monocrystalline silicon substrate is 630K, on monocrystalline silicon substrate surface, obtains accurate two-dimensional metallic nanostructure; The structural evolution process being driven by DC electric field as shown in Figure 5.
Electric field controls is prepared nanostructure device with embodiment 1 on monocrystalline silicon substrate surface;
Selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and be cut into rectangular monocrystalline silicon substrate;
Monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber, in pressure in vacuum tank≤2 * 10
-8under Pa condition, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 2s, clean its surface; Now obtain clean Si(111) 7 * 7 surfaces;
By evaporation source, to the clean 0.5 layer of Au atom of monocrystalline silicon substrate surface deposition of surface process, on monocrystalline silicon substrate surface, obtain 5 * 2 gold medals absorption monocrystalline silicon surface structures; During deposition, control gas pressure in vacuum≤1 * 10
-7pa, monocrystalline silicon substrate temperature is 873 ± 10K;
Metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML; The window of mask is rectangle or slit, and width is at 150 μ m, mask material selection tantalum; When evaporation plating indium film, with reflected high energy electron diffraction device, monitor at any time diffraction spot style, the coverage that just shows indium when there is the diffraction pattern of √ 3 * √ 3 surface reconstructions is just 1/3ML (1/3rd monoatomic layers), and records this time; According to the speed of evaporation indium and time, just can accurately control the coverage size of deposition indium film, when evaporation rate is identical, when evaporation time is 6 times of time of coverage 1/3ML, both having obtained coverage is the indium film of 2.0ML;
Along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1～0.2A, the time that applies electric current is 1～10min, while applying electric field, the temperature of monocrystalline silicon substrate is 630K～763K, on monocrystalline silicon substrate surface, obtains accurate two-dimensional metallic nanostructure; The structural evolution process being driven by DC electric field as shown in Figure 6.
Embodiment 4
Electric field controls is prepared nanostructure device with embodiment 1 on monocrystalline silicon substrate surface;
Selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and be cut into rectangular monocrystalline silicon substrate;
Monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber, in pressure in vacuum tank≤2 * 10
-8under Pa condition, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 4s, clean its surface; Now obtain clean Si(111) 7 * 7 surfaces;
By evaporation source, to the clean 0.7 layer of Au atom of monocrystalline silicon substrate surface deposition of surface process, on monocrystalline silicon substrate surface, obtain (5X2+ α-√ 3X √ 3) gold absorption monocrystalline silicon surface structure; During deposition, control gas pressure in vacuum≤1 * 10
-7pa, monocrystalline silicon substrate temperature is 873 ± 10K;
Metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML; The window of mask is rectangle or slit, and width is at 150 μ m, mask material selection tantalum; When evaporation plating indium film, with reflected high energy electron diffraction device, monitor at any time diffraction spot style, the coverage that just shows indium when there is the diffraction pattern of √ 3 * √ 3 surface reconstructions is just 1/3ML (1/3rd monoatomic layers), and records this time; According to the speed of evaporation indium and time, just can accurately control the coverage size of deposition indium film, when evaporation rate is identical, when evaporation time is 6 times of time of coverage 1/3ML, both having obtained coverage is the indium film of 2.0ML;
Along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1A, the time that applies electric current is 5～30min, while applying electric field, the temperature of monocrystalline silicon substrate is 630K, on monocrystalline silicon substrate surface, obtain accurate two-dimensional metallic nanostructure, the structural evolution process being driven by DC electric field as shown in Figure 7.
Embodiment 5
Electric field controls is prepared nanostructure device with embodiment 1 on monocrystalline silicon substrate surface;
Selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and be cut into rectangular monocrystalline silicon substrate;
Monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber, in pressure in vacuum tank≤2 * 10
-8under Pa condition, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 4s, clean its surface; Now obtain clean Si(111) 7 * 7 surfaces;
By evaporation source, to the clean 0.1 layer of Au atom of monocrystalline silicon substrate surface deposition of surface process, on monocrystalline silicon substrate surface, obtain (7 * 7+5 * 2) gold absorption monocrystalline silicon surface structure; During deposition, control gas pressure in vacuum≤1 * 10
-7pa, monocrystalline silicon substrate temperature is 873 ± 10K;
Metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML; The window of mask is rectangle or slit, and width is at 200 μ m, mask material selection tantalum; When evaporation plating indium film, with reflected high energy electron diffraction device, monitor at any time diffraction spot style, the coverage that just shows indium when there is the diffraction pattern of √ 3 * √ 3 surface reconstructions is just 1/3ML (1/3rd monoatomic layers), and records this time; According to the speed of evaporation indium and time, just can accurately control the coverage size of deposition indium film, when evaporation rate is identical, when evaporation time is 6 times of time of coverage 1/3ML, both having obtained coverage is the indium film of 2.0ML;
Along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1～0.5A, the time that applies electric current is 1～60min, while applying electric field, the temperature of monocrystalline silicon substrate is 763K, on monocrystalline silicon substrate surface, obtains accurate two-dimensional metallic nanostructure.
Electric field controls is prepared nanostructure device with embodiment 1 on monocrystalline silicon substrate surface;
Selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and be cut into rectangular monocrystalline silicon substrate;
Monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber, in pressure in vacuum tank≤2 * 10
-8under Pa condition, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 6s, clean its surface; Now obtain clean Si(111) 7 * 7 surfaces;
By evaporation source, to the clean 1 layer of Au atom of monocrystalline silicon substrate surface deposition of surface process, on monocrystalline silicon substrate surface, obtain α-√ 3 * √ 3 gold medals absorption monocrystalline silicon surface structures; During deposition, control gas pressure in vacuum≤1 * 10
-7pa, monocrystalline silicon substrate temperature is 873 ± 10K;
Metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML; The window of mask is rectangle or slit, and width is at 50 μ m, mask material selection tantalum; When evaporation plating indium film, with reflected high energy electron diffraction device, monitor at any time diffraction spot style, the coverage that just shows indium when there is the diffraction pattern of √ 3 * √ 3 surface reconstructions is just 1/3ML (1/3rd monoatomic layers), and records this time; According to the speed of evaporation indium and time, just can accurately control the coverage size of deposition indium film, when evaporation rate is identical, when evaporation time is 6 times of time of coverage 1/3ML, both having obtained coverage is the indium film of 2.0ML;
Along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1～0.5A, the time that applies electric current is 1～60min, while applying electric field, the temperature of monocrystalline silicon substrate is 630K, on monocrystalline silicon substrate surface, obtains accurate two-dimensional metallic nanostructure.
Claims (2)
1. electric field controls is prepared a method for nanostructure on monocrystalline silicon substrate surface, it is characterized in that carrying out according to the following steps:
(1) selecting bright finished resistivity is the N-shaped Si(111 of 50～100 Ω cm) silicon circular wafer, along long limit, be parallel to < 1-10 > direction and cut, make rectangular monocrystalline silicon substrate;
(2) monocrystalline silicon substrate is fixed on the vacuum chamber sample stage of MBE chamber; In pressure in vacuum tank≤2 * 10
-8under the UHV condition of Pa, monocrystalline silicon substrate is heated to 1473 ± 10K and keeps 2～6s, clean its surface;
(3) by evaporation source, to surface, pass through clean 0.1～1 layer of Au atom of monocrystalline silicon substrate surface deposition, on monocrystalline silicon substrate surface, obtain the gold absorption monocrystalline silicon surface structure with different reconstruct; During deposition, control gas pressure in vacuum≤1 * 10
-7pa, monocrystalline silicon substrate temperature is 873 ± 10K; The gold absorption monocrystalline silicon surface structure of described different reconstruct refers to 7 * 7, (7 * 7+5 * 2), 5 * 2, (5 * 2+ α-√, 3 * √ 3), α-√ 3 * √ 3 or β-√ 3 * √ 3 surface textures;
(4) metal In is at room temperature arrived to monocrystalline silicon substrate center by the slit window hydatogenesis on the indoor mask of molecular beam epitaxy, obtain rectangular film lamella on monocrystalline silicon substrate, the thickness of rectangular film lamella is 2.0 ± 0.2ML;
(5) along < 1-10 > direction, the rectangular film lamella on monocrystalline silicon substrate is applied to DC electric field and start to drive electromigration, the Electromigration dispersion of control rectangle film lamella, current strength is 0.1～0.5A, the time that applies electric current is 1～60min, while applying electric field, the temperature of monocrystalline silicon substrate is 630～763K, on monocrystalline silicon substrate surface, obtains accurate two-dimensional metallic nanostructure.
2. a kind of electric field controls according to claim 1 prepare the method for nanostructure on monocrystalline silicon substrate surface, and the window of the mask described in it is characterized in that is rectangle or slit, and width is at 50～200 μ m, mask material selection metal tantalum.
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