CN103712695A - Infrared radiation temperature measurement calibrating device for chemical vapor deposition equipment, and calibration method thereof - Google Patents
Infrared radiation temperature measurement calibrating device for chemical vapor deposition equipment, and calibration method thereof Download PDFInfo
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- CN103712695A CN103712695A CN201210380850.XA CN201210380850A CN103712695A CN 103712695 A CN103712695 A CN 103712695A CN 201210380850 A CN201210380850 A CN 201210380850A CN 103712695 A CN103712695 A CN 103712695A
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- 230000005855 radiation Effects 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 title abstract description 15
- 238000009529 body temperature measurement Methods 0.000 title abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 71
- 230000003287 optical effect Effects 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009434 installation Methods 0.000 claims description 15
- 239000013307 optical fiber Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 3
- 230000008030 elimination Effects 0.000 claims description 2
- 238000003379 elimination reaction Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract 4
- 239000000835 fiber Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- -1 vacuum electronic Substances 0.000 description 1
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Abstract
The invention discloses an infrared radiation temperature measurement calibrating device for chemical vapor deposition equipment, and a calibration method thereof. The optical detection holes capable of light transmission, of the calibrating device are arranged in a spraying disc; infrared radiation temperature testers are arranged to be corresponding to the optical detection holes in the spraying disc; and fibers or light beams are fixed through a black-body furnace end clamp and a detection hole end clamp and are connected between a black-body furnace and the optical detection holes. Through the fibers or the light beams, infrared radiation of the black-body furnace is introduced to the optical detection openings of the spraying disc of the metal organic chemical vapor deposition equipment, and on-line calibration can be performed on the infrared radiation temperature testers above the spraying disc. The advantages are as follows: the structure is simple, temperature differences caused by system errors and assembling factors of an infrared radiation temperature tester system itself can be eliminated, the relative temperature tested by each infrared radiation temperature tester is more accurate, and the uniformity adjustment of the surface temperature of a substrate bearing plate is facilitated, thus the problem of temperature calibration of the metal organic chemical vapor deposition equipment is solved.
Description
Technical field
The present invention relates to non-contacting infrared thermometric field, especially relate to a kind of infrared radiation temperature calibrating installation and calibration steps thereof for metal-organic chemical vapor deposition equipment chemical vapor depsotition equipment.
Background technology
Chemical vapour deposition technique (Metal Organic Chemical Vapor Deposition, be called for short MOCVD) to integrate precision optical machinery, semiconductor material, vacuum electronic, fluid mechanics, thermal conduction study, optics, chemistry, computing machine multidisciplinary, is high-end semiconductor material, the photoelectron specialized equipment that a kind of automaticity is high, expensive, technology integrated level is high.MOCVD is a kind of non-equilibrium growing technology, its working mechanism is by source gas transport, makes to carry out heat scission reaction on III family alkylate (TMGa, TMIn, TMAl, two luxuriant magnesium etc.) and the substrate of V family hydride (AsH3, PH3, NH3 etc.) in reaction chamber.The growth rate of epitaxial material is more moderate, can more accurately control thickness.Its component and growth rate determine by the air-flow of technological temperature, various heterogeneities and the source flux accurately controlled.Wherein temperature differs 1 degree Celsius, can make the centre wavelength of photoelectric device drift about about 1 nanometer, so for type of production MOCVD equipment, whole slide holder temperature homogeneity is very important.And only have the temperature that can accurately measure multiple spot slide glass panel surface, could make slide holder temperature reach even by adjusting.
Infrared radiation temperature method in existing metal-organic chemical vapor deposition equipment is that major part is to adopt single wavelength measurement, this metering system is had relatively high expectations to the installation accuracy of testing tool, and need measurement or know the emissivity that target detection shows, this also can bring larger difficulty, so measurement accuracy is poor.For Measurement accuracy emissivity is carried out base measuring temperature testing tool, in US Patent No. 7275861B2, mention a kind of employing, on calibration disk (calibration wafer), reference area (reference region) and non-reference area (non-reference region) are set, the eutectic that uses aluminium (Al) or silver (Ag) in reference area, the temperature value that utilizes its known fusing point and emissivity and non-reference area to measure carrys out base measuring temperature tester.Temperature testing method and the device of a kind of dual wavelength using in patent document CN 102455222A, have also been disclosed in metal-organic chemical vapor deposition equipment, the method is simplified the step that needs to demarcate emissivity in common single wavelength optical thermometric calculating, eliminate the error that the variation of pick-up probe solid angle and detector and measured object change of distance are brought, greatly improved the accuracy of measuring temperature.
Although two kinds of methods that disclose above can improve the accuracy of single-point thermometric to a certain extent, but still cannot meet in actual applications the requirement of multipoint temperature monitoring to relative temperature measurement accuracy in metal-organic chemical vapor deposition equipment, and it is sometimes very inconvenient to operate.Because it is relevant with structure, optical window material, manufacture, the rigging error of the installation site of tester and the optical detection mouth of radiant light to measure the infrared radiation ability obtaining, these errors can cause identical temperature, the data that each test port is read are different, be the relative temperature read untrue of each tester, the accuracy that this inaccurate feedback result regulates the temperature homogeneity that affects slide glass dish.
Summary of the invention
The object of the invention is for the defect existing in prior art, a kind of infrared radiation temperature calibrating installation and calibration steps thereof of metal-organic chemical vapor deposition equipment are provided, infrared radiation temperature calibrating installation of the present invention comprises infrared radiation temperature tester 4, optical detection hole 3, blackbody furnace 10, optical fiber or light shafts 8, detect nose end fixture 7 and blackbody furnace end fixture 9, it is characterized in that optical detection hole 3 is for can printing opacity, optical detection hole 3 is arranged in shower tray 1, infrared radiation temperature tester 4 be arranged in shower tray 1 can printing opacity the corresponding setting in optical detection hole 3, optical fiber or light shafts 8 are fixed and are connected between blackbody furnace 10 and optical detection hole 3 by blackbody furnace end fixture 9 and detection nose end fixture 7.
Described infrared radiation temperature tester 4 and optical detection hole 3 correspondences are set to more than 2.In infrared radiation temperature tester 4, have at least one to there is emittance correction temperature or eliminate the function that emissivity affects temperature.
The infrared radiation temperature tester of said apparatus, can be set to single wavelength infrared radiation temperature tester or dual wavelength infrared radiation temperature tester or multi-wavelength infrared radiation temperature tester, for target area temperature detection output or demonstration;
Optical detection hole, is arranged on the optics printing opacity through hole in shower tray, in the different radial position of shower tray, arrange a plurality of, as the transmission channel of infrared radiation temperature tester and detection signal;
Blackbody furnace, as calibrated radiation source, carries out temperature calibration and correction;
Optical fiber or fibre bundle, for the standard infrared radiation signal of the setting of blackbody furnace is transferred to optical detection hole, finally enter infrared radiation temperature tester;
Detect nose end fixture, for the location in shower tray of optical fiber or light shafts and fixing, so that its aligning carries out the optical detection hole of infrared radiation temperature tester calibration.
The present invention also provides the calibration steps of the infrared radiation temperature calibrating installation that uses above-mentioned metal-organic chemical vapor deposition equipment.Blackbody furnace is arranged to a certain specified temp, by optical fiber or light shafts, standard infrared radiation signal is transferred to each optical detection hole respectively, infrared radiation temperature tester carries out temperature survey to slide glass dish or substrate surface, manufacture due to each optical detection hole and infrared radiation temperature tester above thereof, assembling difference, the temperature that likely causes each infrared radiation temperature tester to detect is different, so just can record each detects between infrared radiation temperature tester corresponding to hole and sets the temperature contrast that temperature radiation signal records, and then one of them can be detected to corresponding the having in hole and eliminate temperature that emissivity affect the detection of infrared radiation temperature tester as standard value, infrared radiation temperature tester corresponding to other optical detection holes deducts standard value according to the temperature value recording separately and obtains temperature gap.Then the specified temp of blackbody furnace setting, standard value and temperature gap are carried out to matching with least square method, obtain the temperature gap curve that infrared radiation temperature tester corresponding to each optical detection hole records, then according to this temperature gap curve, the temperature of infrared radiation temperature tester actual measurement corresponding to optical detection hole is calibrated.
In metal-organic chemical vapor deposition equipment technological process, use infrared radiation temperature tester to carry out temperature survey to slide glass dish or substrate surface, according to aforementioned blackbody furnace, demarcating the temperature gap curve obtaining calibrates the temperature of infrared radiation temperature tester actual measurement corresponding to optical detection hole, to eliminate due to the manufacture of infrared radiation temperature measurement device system, the temperature contrast that assembling factor causes, the relative temperature value that infrared radiation temperature tester corresponding to each optical detection hole recorded is comparatively accurate, so that the temperature homogeneity of slide glass panel surface regulates.
Advantage of the present invention is: in metal-organic chemical vapor deposition equipment technological process, the present invention can eliminate the manufacture due to infrared radiation temperature measurement device system, the temperature contrast that assembling factor causes, make the relative temperature of each infrared radiation temperature measurement device test more accurate, so that the temperature homogeneity of slide glass panel surface regulates, set in addition a wherein infrared radiation temperature tester and there is the function that elimination emissivity affects temperature, such as colorimetric infrared temperature tester, multi-wavelength infrared temperature tester, by this calibrating installation, can further revise temperature, make temperature test further approach true temperature.
Accompanying drawing explanation
Fig. 1 is the structure intention of infrared radiation temperature calibrating installation of the present invention.
In Fig. 1, the 1st, shower tray, the 2nd, spray apertures, the 3rd, optical detection hole, wherein: 3a optical detection hole one, 3b optical detection hole two, 3c optical detection hole three, 3d optical detection hole four, 3e optical detection hole five, the 4th, infrared radiation temperature tester, wherein: 4a infrared radiation temperature tester one, 4b infrared radiation temperature tester two, 4c infrared radiation temperature tester three, 4d infrared radiation temperature tester four, 4e infrared radiation temperature tester five, the 5th, slide glass dish, the 6th, substrate, the 7th, detect nose end fixture, the 8th, optical fiber or fibre bundle, the 9th, blackbody furnace end fixture, the 10th, blackbody furnace.
Embodiment
Below in conjunction with accompanying drawing, further illustrate embodiments of the invention:
Embodiment mono-
Referring to Fig. 1, infrared radiation temperature calibrating installation of the present invention comprises infrared radiation temperature tester 4, optical detection hole 3, blackbody furnace 10, optical fiber or light shafts 8, detects nose end fixture 7 and blackbody furnace end fixture 9.Optical detection hole 3 be can printing opacity through hole, the optical detection hole 3 that this enforcement is grinned has five, be separately positioned in shower tray 1, for optical detection hole one 3a, optical detection hole two 3b, optical detection hole three 3c, optical detection hole four 3d, optical detection hole five 3e, infrared radiation temperature tester 4 is also provided with four, for: infrared radiation temperature tester one 4a, infrared radiation temperature tester two 4b, infrared radiation temperature tester three 4c, infrared radiation temperature tester four 4d, infrared radiation temperature tester five 4e, five infrared radiation temperature testers respectively be arranged in shower tray 1 can printing opacity five optical detection holes 3 corresponding, optical fiber or light shafts 8 are fixed and are connected between blackbody furnace 10 and optical detection hole 3 by blackbody furnace end fixture 9 and detection nose end fixture 7.Described infrared radiation temperature tester 4 can be set to single wavelength infrared radiation temperature tester or dual wavelength infrared radiation temperature tester or multi-wavelength infrared radiation temperature tester, in target area temperature detection output or demonstration.
The calibration steps of the infrared radiation temperature calibrating installation of use the present embodiment is as follows:
Blackbody furnace 10 is arranged to a certain specified temp, by optical fiber or light shafts 8, standard infrared radiation signal is transferred to optical detection hole one 3a respectively, optical detection hole two 3b, optical detection hole three 3c, what optical detection hole five 3e of optical detection hole four 3d, manufacture due to each optical detection hole and infrared radiation temperature tester above thereof, assembling difference, likely cause infrared radiation temperature tester one 4a, infrared radiation temperature tester two 4b, infrared radiation temperature tester three 4c, the temperature that infrared radiation temperature tester four 4d and infrared radiation temperature tester five 4e detect is different.The temperature that infrared radiation temperature tester one 4a corresponding to optical detection hole one 3a detected is as standard value, and optical detection hole two 3b, optical detection hole three 3c, what optical detection hole five 3e of the optical detection hole four 3d temperature value that infrared radiation temperature tester two 4b, infrared radiation temperature tester three 4c, infrared radiation temperature tester four 4d and the infrared radiation temperature tester five 4e use of correspondence record respectively deducts standard value and obtains temperature gap.
Similarly, blackbody furnace 10 is arranged to a series of specified temp, can obtain a series of standard value and temperature gap.This series of temperature gap is carried out to matching, as least square fitting, obtain the temperature gap curve that infrared radiation temperature tester corresponding to each optical detection hole records.
In metal-organic chemical vapor deposition equipment technological process, use infrared radiation temperature tester to carry out temperature survey to slide glass dish 5 or substrate 6 surfaces, according to aforementioned blackbody furnace 10, demarcating the temperature gap curve obtaining calibrates the temperature of infrared radiation temperature tester actual measurement corresponding to optical detection hole, to eliminate the manufacture due to infrared radiation temperature measurement device system, the temperature contrast that assembling factor causes, the relative temperature value that infrared radiation temperature tester corresponding to each optical detection hole recorded is comparatively accurate, so that the temperature homogeneity of slide glass panel surface regulates.
Claims (4)
1. the infrared radiation temperature calibrating installation of a chemical vapor depsotition equipment, comprise infrared radiation temperature tester (4), optical detection hole (3), blackbody furnace (10), optical fiber or light shafts (8), detect nose end fixture (7) and blackbody furnace end fixture (9), it is characterized in that optical detection hole (3) is for can printing opacity, optical detection hole (3) is arranged in shower tray (1), infrared radiation temperature tester (4) be arranged in shower tray (1) can printing opacity the corresponding setting in optical detection hole (3), optical fiber or light shafts (8) are fixed and are connected between blackbody furnace (10) and optical detection hole (3) by blackbody furnace end fixture (9) and detection nose end fixture (7).
2. the infrared radiation temperature calibrating installation of chemical vapor depsotition equipment according to claim 1, is characterized in that described infrared radiation temperature tester (4) and optical detection hole (3) correspondence are set to more than 2.
3. the infrared radiation temperature calibrating installation of chemical vapor depsotition equipment according to claim 1 and 2, is characterized in that having at least one to have emittance correction temperature or eliminate the function that emissivity affects temperature in described infrared radiation temperature tester (4).
4. with the calibration steps of the infrared radiation temperature calibrating installation of chemical vapor depsotition equipment claimed in claim 1, it is characterized in that: blackbody furnace is arranged to a certain specified temp, by optical fiber or light shafts, standard infrared radiation signal is transferred to each optical detection hole respectively, infrared radiation temperature tester carries out temperature survey to slide glass dish or substrate surface, record each and detect between infrared radiation temperature tester corresponding to hole the temperature contrast with set specified temp radiation signal, and then the temperature that one of them is detected to the infrared radiation temperature tester detection with the impact of elimination emissivity corresponding to hole is as standard value, infrared radiation temperature tester corresponding to other optical detection holes deducts standard value according to the temperature value recording separately and obtains temperature gap, then specified temp blackbody furnace being arranged, standard value and temperature gap carry out matching with least square method, obtain the temperature gap curve that infrared radiation temperature tester corresponding to each optical detection hole records, according to this temperature gap curve, the temperature of infrared radiation temperature tester actual measurement corresponding to optical detection hole is calibrated again.
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Cited By (5)
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| CN104089704A (en) * | 2014-07-09 | 2014-10-08 | 北京智朗芯光科技有限公司 | Auxiliary temperature correction method of semiconductor thin-film reaction chamber |
| CN105021288A (en) * | 2015-08-05 | 2015-11-04 | 浙江大学 | Device for temperature measurement of substrate surface in hot filament chemical vapor deposition |
| CN105136304A (en) * | 2014-05-26 | 2015-12-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Temperature calibration method and system |
| CN106987899A (en) * | 2016-10-31 | 2017-07-28 | 姜全忠 | Use Material growth device, growing method and the detection means of gas phase transmission |
| CN107110709A (en) * | 2014-11-27 | 2017-08-29 | 艾克斯特朗欧洲公司 | The method for calibrating the high temperature counter device of CVD or PVD reactors |
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| CN106987899B (en) * | 2016-10-31 | 2021-08-31 | 姜全忠 | Material growth apparatus using vapor transport, growth method, and detection apparatus |
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