CN103578904A - Particle pollution reducing method used for multi-chamber plasma processing device - Google Patents
Particle pollution reducing method used for multi-chamber plasma processing device Download PDFInfo
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- CN103578904A CN103578904A CN201210249772.XA CN201210249772A CN103578904A CN 103578904 A CN103578904 A CN 103578904A CN 201210249772 A CN201210249772 A CN 201210249772A CN 103578904 A CN103578904 A CN 103578904A
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Abstract
Provided is a particle pollution reducing method used for a multi-chamber plasma processing device. The plasma processing device at least comprises two chambers, and each chamber is provided with a cathode at a lower position. The cathode is connected with a radio frequency power source. Substrates are arranged on the chambers to process. The method comprises the following steps: (a) first process air is piped into the multiple chambers, and a first frequency is applied to the multiple chambers so that a plasma is stimulated to execute a first process on the substrates respectively; (c) a second frequency is applied to the chambers which complete the process first so that the plasma is maintained to be just at the no-put-out state; (e) second process air is piped into the multiple chambers, and a third frequency is applied to the multiple chambers so that the plasma is stimulated to execute the second process on the substrates respectively. Particle pollution of the plasma processing chambers can be substantially improved by the method, and stability and efficiency of the process are enhanced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method of the minimizing particle contamination for multi-chamber plasma treatment appts.
Background technology
Plasma treatment appts utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, to pass into the reacting gas that contains suitable etching agent source gas, and then this vacuum reaction chamber is carried out to radio-frequency (RF) energy input, with activated reactive gas, excite and maintain plasma, so that respectively the material layer on etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate are processed.
In comprising multi-chamber plasma treatment appts, the substrate carrying on a plurality of chambers carries out same processing procedure reaction simultaneously.The plasma treatment appts of two chambers of take is example, they two reaction chambers that comprise two chambers have identical processing procedure pressure, pass into identical process gas, pass into radio-frequency (RF) energy process gas is carried out to excitation of plasma, to start carrying out same processing procedure at synchronization, treat to enter again next processing procedure after this processing procedure completes.Yet, impact due to structure, function and other factors of two reaction chambers, on two chambers wherein, the processing procedure degree of carrying substrates can not be in full accord, and often first one of them reaction chamber completes processing procedure, and another reaction chamber is still in processing procedure.The way of prior art is, cuts off the radio-frequency (RF) energy of the reaction chamber that first completes processing procedure to extinguish plasma, also completes after processing procedure, then switch and enter next processing procedure simultaneously until another reaction chamber.
Yet, in the short time, turn off plasma and easily produce particle (particle) pollution.Particle contamination is one of important indicator of weighing apparatus for processing plasma performance, and particle drops and can cause defective workmanship on substrate, even causes substrate to cancel.
And, owing to first completing the reaction chamber of processing procedure, cut off radio-frequency (RF) energy to extinguish plasma, when therefore entering next processing procedure, also need to rekindle plasma.It will be appreciated by those skilled in the art that lighting plasma to the required plasma density of processing procedure needs an ignition stage (strike).Ignition stage needs certain hour and high pressure, and the plasma unstable of its generation, for processing procedure has increased destabilizing factor.
For overcoming the above-mentioned defect of prior art, the present invention is proposed.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of method of the minimizing particle contamination for multi-chamber plasma treatment appts.
First aspect present invention provides a kind of method of the minimizing particle contamination for multi-chamber plasma treatment appts, described plasma treatment appts at least comprises two chambers, each chamber is provided with a negative electrode at lower position place, on described negative electrode, be connected with radio frequency power source, substrate is positioned over and on chamber, carries out processing procedure, wherein, described method comprises the steps:
(a), pass into the first process gas to a plurality of chambers, apply first frequency in a plurality of chambers simultaneously, with activated plasma, respectively substrate is carried out to the first processing procedure;
(c), apply second frequency and in first, complete the chamber of processing procedure, to maintain plasma in just not extinguishing state;
(e), pass into the second process gas to a plurality of chambers, apply the 3rd frequency in a plurality of chambers simultaneously, with activated plasma, respectively substrate is carried out to the second processing procedure.
Particularly, execution step (c), to maintain plasma in 1E6cm
-3in 1E12cm
-3between.
Further, in described step (a), also comprise before step (b) with described step (c) afterwards:
Pass into assist gas to first completing the chamber of processing procedure.
Further, in step (c), also comprise before step (d) with described step (e) afterwards:
Stop passing into assist gas to first completing the chamber of processing procedure.
Further, described assist gas comprises inert gas.
Further, the time of implementation of described step (a) and step (c) and described first frequency and the 3rd frequency are determined according to the first processing procedure and the second processing procedure respectively.
Further, described second frequency is lower than described first frequency and described the 3rd frequency.
Further, the span of described second frequency is 100W～300W.
Further, the span of the time of implementation of described step (c) is 1s～10s.
Further, in described step (c) afterwards, step (e) is carried out following steps before:
-apply and wait for that frequency is in a plurality of chambers, to maintain plasma.
The method of the minimizing particle contamination for multi-chamber plasma treatment appts provided by the invention, first the radio-frequency (RF) energy that completes the reaction chamber of the first processing procedure is adjusted to minimum, to maintain plasma in not extinguishing state, treat that other reaction chambers also complete the first processing procedure and enter together the second processing procedure later.The present invention can significantly improve the particle contamination of plasma treatment chamber, and has improved stability and the efficiency of processing procedure.
Accompanying drawing explanation
Fig. 1 is the structural representation that comprises the parallel plasma treatment appts 100 of multi-chamber;
Fig. 2 is the liner etching flow chart according to a specific embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 comprises the structural representation of the parallel plasma treatment appts 100 of multi-chamber, wherein, parallel plasma treatment appts comprises two chambers, the first chamber 105a and the second chamber 105b, and the first chamber 105a and the second chamber 105b are physically separated by dividing wall 107.Wherein, chamber body is made by the metal material conducting electricity (as aluminium) conventionally.The first chamber 105a and the second chamber 105b respectively have a pedestal, and the first pedestal 103a and the second pedestal 103b place respectively the first substrate W1 and the second substrate W2 to carry out PROCESS FOR TREATMENT on each pedestal.Chamber roof at each chamber is provided with gas spray 102a and 102b, and reacting gas enters respectively the first chamber 105a and the second chamber 105b by gas source 101 from the top for the treatment of chamber.Reacting gas can be excited and form respectively between upper/lower electrode.The first radio frequency power source 104a and the second radio frequency power source 104b are connected to the bottom electrode in setting and the first pedestal 103a and the second pedestal 103b, to form high-frequency energy, light and maintain plasma.The first chamber 105a and the second chamber 105b also comprise respectively a confinement ring (not shown), for processing procedure particle being constrained in respectively in the first process zone P1 and the second process zone P2.Below plasma processing apparatus 100, be connected with a vacuum pump 106, for the reacting gas of using and bi-product gas being extracted to processing procedure out process zone.In addition, also adopt isostasy mechanism to carry out the pressure between two processing region P1 of balance and P2.Chamber body (comprising dividing wall 107) is grounded, thereby provides electric field isolation between two processing region P1 and P2, helps avoid radio frequency and crosstalks.
Below in conjunction with specific embodiment of the present invention, the present invention will be described as example to take liner etching (Pad Etch) processing procedure.Wherein, the first chamber 105a and the second chamber 105b carry out liner etching processing procedure at synchronization simultaneously.
Fig. 2 shows the liner etching flow chart according to a specific embodiment of the present invention.Fig. 2, the invention provides a kind of method of the minimizing particle contamination for multi-chamber plasma treatment appts, and wherein, described method comprises the steps:
First carry out S1, pass into the first process gas CF
4and O
2to the first chamber 105a and the second chamber 105b, apply first frequency in the first chamber 105a and the second chamber 105b simultaneously, with activated plasma, in the first process zone P1 and the second process zone P2, respectively substrate W1 and W2 are carried out to the first processing procedure, i.e. anti-reflection layer 304 opening etchings.
Particularly, referring to accompanying drawing 2 (a), what Reference numeral 301 was indicated is substrate, is silicon nitride layer (SiN) 302 on substrate 301, is followed successively by oxide layer 303 and anti-reflection layer 304 on silicon nitride layer (SiN) 302.On anti-reflection layer 304, be provided with patterned photoresist layer 305, it covers the both sides of etching target anti-reflection layer, and the opening of one fixed width is exposed in centre.The target of the first processing procedure is anti-reflection layer 304 opening etchings, take photoresist layer 305 as mask (mask), utilizes the first process gas CF
4and O
2excite the plasma bombardment anti-reflection layer 304 of generation, obtain the opening (opening) as shown in Fig. 2 (b).
First although the first chamber 105a and the second chamber 105b start to carry out same making technology simultaneously, process conditions is identical, must have a chamber not complete person's processing procedure, suppose that the substrate W1 of the first chamber 105a first arrives etching terminal (endpoint).
Then perform step S3, apply second frequency and in first, complete the first chamber 105a of processing procedure, to maintain plasma in just not extinguishing state.Now, the first process gas CF
4and O
2still keep passing into the first chamber 105a.
It should be noted that, described " state just not extinguishing " refers to that plasma lights just and maintain the critical condition of not extinguishing, even if make to carry out fabrication process, also need not pass through ignition stage again again.
Further, " state just not extinguishing " specifically refers to maintain plasma in 1E6cm
-3in 1E12cm
-3between.
In addition, due to the first process gas CF
4and O
2still keep passing into the first chamber 105a, it must continue to excite generation plasma to continue to carry out processing procedure reaction, but because plasma density is very low, etch rate is very slow, so can see as not impact of processing procedure.
Finally perform step S5, pass into the second process gas to the first chamber 105a and the second chamber 105b, apply the 3rd frequency in the first chamber 105a and the second chamber 105b simultaneously, with activated plasma, respectively substrate is executed in to the first process zone P1 and the second process zone P2 respectively to substrate W1 and W2 the second processing procedure.
Particularly, referring to accompanying drawing 2 (c), the target of the second processing procedure is that oxide layer 303 is carried out to further etching, and wherein, the second process gas is C
4f
8and O
2.
It should be noted that, after treating that the second chamber 105b completes the first processing procedure, can be at once the first chamber 105a and the second chamber 105b be inputted to the second process gas simultaneously and carry out the second processing procedure, owing to applying second frequency, in first, complete the first chamber 105b of processing procedure, to maintain plasma in just not extinguishing state, the first chamber 105a did not need to pass through ignition stage before entering the second processing procedure again, had reduced the destabilizing factor of processing procedure.In addition,, because the first chamber 105a does not turn off plasma at short notice, do not have this yet and produce particle contamination.
Alternatively, after described step S1 He before described step S3, also comprise step S2: pass into assist gas to first completing the chamber 105a of processing procedure, stop the input of the first process gas, input in addition assist gas and be specifically designed to and maintain plasma in just not extinguishing state.
Therefore, after step S3 He before described step S5, also comprise step S4: stop passing into assist gas to first completing the chamber 105a of processing procedure so that etc. the second required process gas of the second processing procedure to be entered.
Further, described assist gas comprises inert gas, for example, and argon gas (Ar), helium (Helium) etc.
Further, the time of implementation of described step S1 and step S3 and described first frequency and the 3rd frequency are determined according to the first processing procedure and the second processing procedure respectively.In the present embodiment, the time of implementation of step S3 is 5 seconds.
Further, described second frequency is lower than described first frequency and described the 3rd frequency.
Particularly, the span of described second frequency is 100W～300W.
Further, the span of the time of implementation of described step (b) is 1s～10s.
In addition, utilize vacuum treatment installation to carry out fabrication process to substrate and often comprise a plurality of fabrication steps, therefore can repeat to implement the present invention, stable with the processing procedure of obtaining between a plurality of steps.For example, also need to carry out the 3rd processing procedure after the second processing procedure shown in accompanying drawing 2 (c), silicon nitride layer 302 is carried out to etching, reach the degree of depth shown in accompanying drawing 2 (d), the 3rd process gas is CF
4and CH
2f
2.Then, carry out the 4th processing procedure, as shown in Fig. 2 (e), also need to divest photoresist, the 4th process gas is O
2.Therefore, between the second processing procedure and the 3rd processing procedure and between the 3rd processing procedure and the 4th processing procedure, can carry out once similar step S2, apply lower frequency and in first, complete the chamber of processing procedure, to maintain plasma in just not extinguishing state.
Further, at described step S (3) afterwards, step S (5) carries out following steps before:
-apply and wait for that frequency is in a plurality of chambers, to maintain plasma.
Particularly, apply the first chamber 105a that lower frequency first completes the first processing procedure to maintain plasma after just not extinguishing state executing, can also carry out above-mentioned steps in the first chamber 105a and the second chamber 105b simultaneously, like this, the plasma producing due to residual gas is just enough excessively to the second processing procedure, and the second chamber 105b does not need just can enter the second processing procedure through ignition stage yet.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Those skilled in the art, read after foregoing, for multiple modification of the present invention with to substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. the method for the minimizing particle contamination of multi-chamber plasma treatment appts, described plasma treatment appts at least comprises two chambers, each chamber is provided with a negative electrode at lower position place, on described negative electrode, be connected with radio frequency power source, substrate is positioned over and on chamber, carries out processing procedure, wherein, described method comprises the steps:
(a), pass into the first process gas to a plurality of chambers, apply first frequency in a plurality of chambers simultaneously, with activated plasma, respectively substrate is carried out to the first processing procedure;
(c), apply second frequency and in first, complete the chamber of processing procedure, to maintain plasma in just not extinguishing state;
(e), pass into the second process gas to a plurality of chambers, apply the 3rd frequency in a plurality of chambers simultaneously, with activated plasma, respectively substrate is carried out to the second processing procedure.
2. method according to claim 1, is characterized in that, execution step (c), to maintain plasma in 1E6cm
-3in 1E12cm
-3between.
3. method according to claim 2, is characterized in that, in described step (a), also comprises before step (b) afterwards with described step (c):
Pass into assist gas to first completing the chamber of processing procedure.
4. method according to claim 3, is characterized in that, in step (c), also comprises before step (d) afterwards with described step (e):
Stop passing into assist gas to first completing the chamber of processing procedure.
5. method according to claim 4, is characterized in that, described assist gas comprises inert gas.
6. method according to claim 4, is characterized in that, the time of implementation of described step (a) and step (c) and described first frequency and the 3rd frequency are determined according to the first processing procedure and the second processing procedure respectively.
7. method according to claim 6, is characterized in that, described second frequency is lower than described first frequency and described the 3rd frequency.
8. method according to claim 6, is characterized in that, the span of described second frequency is 100W ~ 300W.
9. method according to claim 6, is characterized in that, the span of the time of implementation of described step (c) is 1s ~ 10s.
10. method according to claim 1, is characterized in that, in described step (c) afterwards, step (e) is carried out following steps before:
-apply and wait for that frequency is in a plurality of chambers, to maintain plasma.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538334A (en) * | 2014-12-17 | 2015-04-22 | 中国地质大学（北京） | Multifunctional plasma cavity processing system |
| CN111180326A (en) * | 2019-10-28 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Method for processing semiconductor wafer |
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| US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
| CN101743341A (en) * | 2007-07-12 | 2010-06-16 | 应用材料股份有限公司 | Systems for plasma enhanced chemical vapor deposition and bevel edge etching |
| US20110240114A1 (en) * | 2010-03-30 | 2011-10-06 | Applied Materials, Inc. | Method of forming a negatively charged passivation layer over a diffused p-type region |
| CN202210507U (en) * | 2011-08-30 | 2012-05-02 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor |
-
2012
- 2012-07-18 CN CN201210249772.XA patent/CN103578904B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
| CN101743341A (en) * | 2007-07-12 | 2010-06-16 | 应用材料股份有限公司 | Systems for plasma enhanced chemical vapor deposition and bevel edge etching |
| US20110240114A1 (en) * | 2010-03-30 | 2011-10-06 | Applied Materials, Inc. | Method of forming a negatively charged passivation layer over a diffused p-type region |
| CN202210507U (en) * | 2011-08-30 | 2012-05-02 | 中芯国际集成电路制造(上海)有限公司 | Plasma reactor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538334A (en) * | 2014-12-17 | 2015-04-22 | 中国地质大学（北京） | Multifunctional plasma cavity processing system |
| CN104538334B (en) * | 2014-12-17 | 2017-08-08 | 中国地质大学（北京） | A kind of multi-functional plasma chamber processing system |
| CN111180326A (en) * | 2019-10-28 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Method for processing semiconductor wafer |
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| CN103578904B (en) | 2016-05-25 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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