CN103576242A - Manufacturing method for light-blocking type micro-electro-mechanical variable light attenuator - Google Patents

Manufacturing method for light-blocking type micro-electro-mechanical variable light attenuator Download PDF

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CN103576242A
CN103576242A CN201310511425.4A CN201310511425A CN103576242A CN 103576242 A CN103576242 A CN 103576242A CN 201310511425 A CN201310511425 A CN 201310511425A CN 103576242 A CN103576242 A CN 103576242A
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light
substrate
making
etching
tabula rasa
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CN103576242B (en
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毛旭
魏伟伟
吕兴东
杨晋玲
杨富华
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Institute of Semiconductors of CAS
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Abstract

The invention discloses a manufacturing method for a light-blocking type micro-electro-mechanical variable light attenuator. The method is based on micro-nano machining technology, bulk silicon machining technology is adopted to manufacture a fixed light-blocking board and a movable light-blocking board of the variable light attenuator, light-blocking materials are deposited on the fixed light-blocking board and the movable light-blocking board, so that the blocking and limiting effects on light beams are achieved; a light-permeable hole is formed in the fixed light-blocking board and is used for constraining the size of a light spot and limiting the diffraction of light. Technologies such as photoetching and corrosion are used for manufacturing the movable light-blocking board of the light attenuator so as to enable the movable light-blocking board to be capable of carrying out linear motion under the action of external driving force, and accurate adjustment of transmitted optical energy is achieved through the control over the position of the movable light-blocking board; finally, wafer level bonding integrates the fixed light-blocking board and the movable light-blocking board of the variable light attenuator, and controllable adjustment of the transmitted optical energy is achieved. By means of the method, the ordinary micro-nano machining method is adopted, technologies are mature and reliable, manufacturing accuracy is high, cost can be greatly reduced, and the manufacturing method for the light-blocking type micro-electro-mechanical variable light attenuator is suitable for scale production.

Description

The method for making of the micro electronmechanical variable optical attenuator of a kind of light-barrier type
Technical field
The present invention relates to MEMS and manufacture and engineering field, relate in particular to the method for making of the micro electronmechanical variable optical attenuator of a kind of light-barrier type.
Background technology
Optical attenuator is as the components and parts in optical fiber communication, can externally encourage under (machinery, electric power, magnetic force etc.) effect, by optical element, moves or the change of optical states, realizes the intensity of light signal is regulated.Optical attenuator is one of optical passive component important in light communication system, can in optical-fiber network, produce controlled decay, realize with other device matching well that the gain of light is smooth, dynamic gain balance and through-put power balanced, in fields such as optical-fibre communications, optical fiber analog signal transmission, optical sensor analog imaging and optical fiber measurements, have very important application.
Variable optical attenuator damping capacity can change, and initiatively accurate balance luminous power, realizes in real time and processing signal, in development compared with tool advantage.The shortcomings such as it is large that traditional variable optical attenuator exists volume, and cost is high, not easy of integration, are generally only suitable for single channel decay mode.Along with the potential demand of the application of the development of optical communication network, particularly wavelength-division multiplex technique and the Reconfigurable Optical Add/drop Multiplexer that can upgrade flexibly, more and more need the many and little variable optical attenuator of volume of port number.For meeting better the demand of optical communication, VOA is just integrated towards height, miniaturization, future development cheaply.Traditional mechanical system can not address these problems, thereby has occurred the MEMS variable optical attenuator based on micro-nano process technology.In MEMS VOA performance, except keeping the optical property of conventional art VOA, also have that attenuation range is large, driving voltage is low, volume is little, be easy to that hyperchannel is integrated, fast response time and cost performance advantages of higher, be with a wide range of applications.
Different according to optical attenuation mechanism, micromachine variable light attenuator can be divided into two types: reflective and light-barrier type.Reflective micromachine variable light attenuator is generally that the luminous power of utilizing static to drive mirror deflection or distortion to make to reflex in output optical fibre changes, there are higher decay control accuracy and reaction time faster, but its operating voltage is high, dynamic attenuation scope is little, and insertion loss is larger.
In addition, reflective micromachine variable light attenuator needs complicated optical fiber align light path.Light-barrier type variable light attenuator adopts miniature baffle plate blocking-up transmitting optical signal to realize luminous energy decay, can realize dynamic attenuation on a large scale, low insertion loss.Light-barrier type variable light attenuator can adopt multiple micromachining technology to realize, at present both at home and abroad report to mainly contain surface processing technique, LIGA technology etc., these process technology techniques comparatively complicated, and the yield rate of device production is very low at present, realizes industrialization and also has technical difficulty.Therefore develop that a kind of technique simply, high is made precision and yield rate, the method for making of the micro electronmechanical variable optical attenuator of light-barrier type is to promoting the practical significant of MEMS variable optical attenuator cheaply.
Summary of the invention
(1) technical issues that need to address
The shortcoming large for conventional variable optical attenuator volume, cost is high, not easy of integration, the problem that existing light-barrier type variable light attenuator processing technology is complicated, yield rate is low, the present invention proposes the production program of the micro electronmechanical variable optical attenuator of a kind of light-barrier type, adopt micro-nano process technology to make, technique is simple, making precision is high, easy of integration.These technological breakthroughs have improved making precision and the yield rate of device greatly, effectively reduce cost of manufacture, are conducive to large-scale production.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides the method for making of the micro electronmechanical variable optical attenuator of a kind of light-barrier type, the method comprises the bonding of making, fixed barriers and the active catch tabula rasa of fixed barriers and active catch tabula rasa;
Wherein, the making of fixed barriers comprises:
Positive photoetching, etching at substrate I form groove structure;
The back-etching of substrate I forms light hole, and described light hole and groove structure are connected;
The positive deposit light-locking material of substrate I, forms light shield layer, completes the making of fixed barriers;
The making of described active catch tabula rasa comprises:
The two-sided deposit dielectric film of substrate II;
The dielectric film at the etching substrate II back side, forms etched hole;
The positive deposit light-locking material of substrate II, and etching light-locking material, form light-blocking structure and wire pattern;
Positive according to described light-blocking structure and wire pattern successively etching dielectric film and substrate II, form active catch tabula rasa elastic construction;
The etched hole place at the back side of substrate II carries out wet etching, forms groove structure;
Described in etching, light hole is formed on groove structure bottom, makes active catch tabula rasa elastic construction unsettled, completes the making of active catch tabula rasa;
The bonding of described fixed barriers and active catch tabula rasa comprises:
Respectively at the substrate I back side of the fixed barriers structure of making and the positive deposit bonding material of the substrate II of active catch light plate structure, by photoetching, etching technics, form bonding structure, substrate I and substrate II are aimed at, make light hole in fixed barriers over against the light hole of active catch tabula rasa, then under certain bonding temperature, pressure, carry out bonding, complete the making of variable optical attenuator.
(3) beneficial effect
From technique scheme, can find out, the invention has the beneficial effects as follows:
1. the invention provides a kind of method for making of light-barrier type variable light attenuator, whole making step only needs four mask plates, processing step is simple, what adopt is all conventional MEMS micro-nano processing method, does not need process equipment expensive consuming time, technology maturation, cost is low, making precision is high, is conducive to realize high finished product rate and makes, and is applicable to large-scale production.
2. the present invention adopts the fixedly integrated approach of shadow shield and movable MEMS devices, has effectively controlled spot size, has reduced device size, is conducive to cmos device integrated.
3. the present invention proposes on fixed barriers and movable light shield plate and make groove structure, be conducive to limit fibre, simplified and aimed at and assembling, greatly improved yield rate.
Accompanying drawing explanation
Fig. 1 shows the structural drawing of the micro electronmechanical variable optical attenuator of a kind of light-barrier type of the present invention's proposition;
Fig. 2 shows the vertical view of active catch tabula rasa elastic construction in the present invention;
Fig. 3 (a)-Fig. 3 (d) shows the method for making process chart of the fixed barriers of the micro electronmechanical variable optical attenuator of light-barrier type that the present invention proposes;
Fig. 4 (a)-Fig. 4 (f) shows the process flow diagram of method for making of the active catch tabula rasa of the micro electronmechanical variable optical attenuator of light-barrier type that the present invention proposes.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 1 shows the structural drawing of the micro electronmechanical variable optical attenuator of a kind of light-barrier type of the present invention's proposition.As shown in Figure 1, the micro electronmechanical variable optical attenuation implement body of described light-barrier type comprises: fixed barriers and active catch tabula rasa, described fixed barriers and active catch tabula rasa are made by substrate I and substrate II respectively, and fixed barriers and active catch tabula rasa bonding are made into variable optical attenuator.Described substrate I comprises SOI sheet, glass sheet or other conventional substrate base of silicon wafer, silicon oxide-containing middle layer and single-crystal silicon device layer; Described substrate II comprises the SOI sheet of silicon wafer or silicon oxide-containing middle layer and single-crystal silicon device layer.
Wherein, be manufactured with fixedly frequency modulated light plate groove structure 4 on the front of substrate I, the bottom of groove structure 4 has fixed barriers light hole 7, extends to the back side of substrate I; Surface coverage at the front of described substrate I, the surface of groove structure 4 and light hole 7 has one deck shading film layer 8, and it is light-locking material.
Substrate II comprises body silicon 22 from bottom to up successively, buried oxide layer 21 and top layer silicon 20, and body silicon 22 lower surfaces have groove structure 17, and the bottom of groove structure 17 has light hole 18, and it extends to the lower surface of top layer silicon 20; In top layer silicon 20, be etched with active catch tabula rasa elastic construction 14, active catch tabula rasa elastic construction 14 consists of the folded beam structure with light-blocking structure, on active catch tabula rasa elastic construction 14, be deposited with film 2 and light shield layer 8, film 2 is for the insulation between light shield layer 8 and active catch tabula rasa elastic construction 14.
Fig. 2 shows the vertical view of the tabula rasa of active catch described in the present invention elastic construction.As shown in Figure 2, described active catch tabula rasa elastic construction is folded beam version, and Fig. 1 is the sectional view through dotted line shown in Fig. 2.After the buried oxide layer 21 of described active catch tabula rasa elastic construction 14 lower surfaces is corroded, described active catch tabula rasa elastic construction 14 is unsettled with respect to mask oxide layer 21 and body silicon 22, be specially folded beam structure, and it has a light-blocking structure 9 over against light hole 18 places, top, by folded beam, partly supported, under the driving of external force, can there is translation in this light-blocking structure 9, aim at light hole 18 or be offset from light hole 18, it is when aiming at light hole 18, light shield layer 8 on light-blocking structure 9 covers the light hole of fixed barriers lower surface 7 completely, to block the light in the input optical fibre that enters light hole 7, when it, directly over light hole 18, after translation, can open light hole 7, make the light in input optical fibre be incident to light hole 18 by light hole 7, and then enter the output optical fibre of light hole 18 opposite sides.
Visible, described active catch tabula rasa elastic construction, under external force drives, moves into or shifts out between input optical fibre and output optical fibre, and passing through of all or part of blocking-up transmission light, regulates the transmission light energy that enters output optical fibre.
The present invention proposes the micro electronmechanical variable optical attenuator method for making of a kind of light-barrier type.Utilize micro-nano process technology to make fixed barriers and the active catch tabula rasa of variable optical attenuator,
Fig. 3 (a)～Fig. 3 (d) shows the method for making process chart of the fixed barriers of the micro electronmechanical variable optical attenuator of light-barrier type proposing in the present invention.As shown in Fig. 3 (a)～Fig. 3 (d), this concrete manufacturing process comprises:
Step 1, selection substrate 1 preparation fixed barriers, substrate 1 can be SOI sheet, glass sheet or other conventional substrate base of silicon wafer, silicon oxide-containing middle layer and single-crystal silicon device layer, low-pressure chemical vapor phase deposition LPCVD dielectric film 2 on the front and back of substrate 1, dielectric film 2 can be silicon nitride film or silicon oxide film, mask as insulation course and wet etching substrate II, and to carrying out photoetching, dry etching formation etched hole on the dielectric film 2 in silicon chip 1 front, as shown in Fig. 3 (a);
Step 2, adopt the substrate I in etched hole described in the method etching of KOH or the corrosion of TMAH anisotropic wet or anisotropy reacting ion dry etching, form groove structure 4, for aligning, restriction and fixing input optical fibre, as shown in Fig. 3 (b);
Step 3, in surface and the positive remaining film 2 front electron beam evaporation layer of metal 5 of silicon chip 1 of groove structure 4, metal 5 can be aluminium or chromium, as the be in the light cutoff layer in hole of back-etching, and play conductive force simultaneously, to guarantee that wafer can be by effective cooling, as shown in Fig. 3 (c) in etching process;
Step 4, the film 2 at substrate 1 back side is carried out to photoetching, etching form etched hole, adopt dry etching method, etching is carried out at silicon chip 1 back side of exposing from described etched hole, until etch into the metal level 5 in silicon chip 1 front, form light hole 7, this light hole 7 is for controlling spot size, diffraction-limited effect, and for aiming at limit fibre, convenient for assembly; As shown in Fig. 3 (c);
Step 5, removal metal level 5 and two-side film membrane 2;
Step 6, on substrate 1, deposition film forms light blocking layer 8, light blocking layer 8 can be that the metals such as metal oxide, aluminium, gold such as indium tin oxide target film (ITO) or other have the membraneous material of high reflectance to incident light, be used for blocking input light, as shown in Fig. 3 (d), complete the making of fixed barriers.
Fig. 4 (a)～Fig. 4 (f) shows the process flow diagram of method for making of the active catch tabula rasa of the micro electronmechanical variable optical attenuator of light-barrier type proposing in the present invention.As shown in Fig. 4 (a)～Fig. 4 (f), the concrete manufacture craft of this active catch tabula rasa comprises:
Step 1, using (100) crystal orientation SOI sheet as the substrate II of preparing movable light shield plate, comprise top layer silicon 20, buried oxide layer 21 and body silicon 22, low-pressure chemical vapor phase deposition LPCVD dielectric film 2 on SOI sheet front and back, film 2 can be silicon dioxide or silicon nitride, dielectric film 2 to the SOI sheet back side carries out photoetching, etching, forms etched hole, as shown in Fig. 4 (a);
Step 2, on the film 2 in SOI sheet front electron beam evaporation metal level 8, this metal level can be Cr/Au; Then take photoresist as mask, wet etching metal level 8 forms light-blocking structure and wire pattern 13, and described light-blocking structure figure blocks incident ray for reflection, and wire pattern is used for realizing electric interconnects, as shown in Fig. 4 (b);
Step 3, according to described light-blocking structure and 13 pairs of SOI sheet fronts of wire pattern, carry out photoetching, etch silicon nitride film 2, top layer silicon 20, buried oxide layer 21 successively, form active catch tabula rasa elastic construction 14, as shown in Fig. 4 (c); Described active catch tabula rasa elastic construction 14 is folded beam version, and this folded beam has light-blocking structure 9 over against light hole place;
Step 4, on the positive active catch tabula rasa elastic construction 14 forming of SOI sheet electron beam evaporation layer of metal 5, metal 5 can be aluminium or chromium, as the cutoff layer of back-etching light hole, and play conductive force, to guarantee that wafer can be by effective cooling in etching process simultaneously;
Step 5, adopt the method for KOH wet etching, from the SOI sheet back side, expose the position etching body silicon 22 of body silicon 22, after etching certain hour, form groove structure 17, for aligning, restriction and fixing output optical fibre, as shown in Fig. 4 (d);
Step 6, from the groove structure 17 dry etching body silicon 22 at the SOI sheet back side until metal level 5 forms light hole 18, as shown in Fig. 4 (e);
Step 7, employing HF remove the buried oxide layer 21 active catch tabula rasa elastic construction 14 from the back side, from front, remove cutoff layer metal 5, releasing structure makes active catch tabula rasa elastic construction unsettled, forms folded beam, as shown in Fig. 4 (f), complete the making of active catch tabula rasa.In this step, utilize MEMS technique releasing sacrificial layer, make structural sheet unsettled, thereby become movable physical construction, figure is folded beam, and folded beam end two ends are connected to not etched portions of top layer silicon, is sectional view here, and figure opposite side coupling part does not draw.By release, make active catch tabula rasa unsettled, form movable structure, under driving in external force, between input optical fibre and output optical fibre, move, passing through of all or part of blocking-up transmission light, regulates the transmission light energy that enters output optical fibre.
Respectively at the substrate I back side and the positive deposit bonding material of substrate II, by photoetching, etching technics, in periphery, the substrate I back side, form annular bonding structure 23 with the positive peripheral corresponding position of substrate II, on litho machine, substrate I and substrate II are aimed at, make light hole in fixed barriers over against the light hole of active catch tabula rasa, then put into bonder, under certain bonding temperature, pressure conditions, carry out bonding, complete the making of variable optical attenuator.Described bonding material is epoxy resin, photoresist, gold or tin, and described bonding temperature, pressure are determined by selected bonding material.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (10)

1. a method for making for the micro electronmechanical variable optical attenuator of light-barrier type, the method comprises the bonding of making, fixed barriers and the active catch tabula rasa of fixed barriers and active catch tabula rasa;
Wherein, the making of fixed barriers comprises:
Positive photoetching, etching at substrate I form groove structure;
The back-etching of substrate I forms light hole, and described light hole and groove structure are connected;
The positive deposit light-locking material of substrate I, forms light shield layer, completes the making of fixed barriers;
The making of described active catch tabula rasa comprises:
The two-sided deposit dielectric film of substrate II;
The dielectric film at the etching substrate II back side, forms etched hole;
The positive deposit light-locking material of substrate II, and etching light-locking material, form light-blocking structure and wire pattern;
Positive according to described light-blocking structure and wire pattern successively etching dielectric film and substrate II, form active catch tabula rasa elastic construction;
The etched hole place at the back side of substrate II carries out wet etching, forms groove structure;
Described in etching, light hole is formed on groove structure bottom, makes active catch tabula rasa elastic construction unsettled, completes the making of active catch tabula rasa;
The bonding of described fixed barriers and active catch tabula rasa comprises:
Respectively at the substrate I back side of the fixed barriers structure of making and the positive deposit bonding material of the substrate II of active catch light plate structure, by photoetching, etching technics, form bonding structure, substrate I and substrate II are aimed at, make light hole in fixed barriers over against the light hole of active catch tabula rasa, then under certain bonding temperature, pressure, carry out bonding, complete the making of variable optical attenuator.
2. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that, described substrate I comprises SOI sheet, glass sheet or other conventional substrate base of silicon wafer, silicon oxide-containing middle layer and single-crystal silicon device layer; Described substrate II comprises the SOI sheet of silicon wafer or silicon oxide-containing middle layer and single-crystal silicon device layer.
3. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that, while making fixed barriers, adopts KOH or the corrosion of TMAH anisotropic wet or anisotropy reacting ion dry etching to form groove structure; Described light hole adopts dry etching to form, and it is for controlling spot size, diffraction-limited effect and aiming at limit fibre.
4. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that, during creative activity light barrier, adopts the method for HF wet etching or anisotropy reacting ion dry etching, the dielectric film at the etching substrate II back side; Employing is peeled off, the method for wet etching or dry etching, and light-locking material described in etching, forms light-blocking structure and wire pattern; Described in employing anisotropy reacting ion dry etching, dielectric film and substrate II are positive, form active catch tabula rasa elastic construction; Adopt KOH or the TMAH anisotropic wet corrosion substrate II back side, form groove structure; Adopt anisotropy reacting ion dry etching groove structure bottom, form light hole.
5. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that, described dielectric film is silicon nitride film or silicon oxide film, as the mask of insulation course and wet etching substrate II.
6. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that, described light-locking material is that metal oxide, metal or other have the membraneous material of high reflectance to incident light.
7. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that: described bonding material is epoxy resin, photoresist, gold or tin.
8. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that: described bonding temperature, pressure are determined by selected bonding material.
9. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type according to claim 1, is characterized in that: described active catch tabula rasa elastic construction can issue life in external force driving and move, to block or to open the light hole in fixed barriers.
10. the method for making of the micro electronmechanical variable optical attenuator of light-barrier type as claimed in claim 1, it is characterized in that: described active catch tabula rasa elastic construction is the folded beam structure with light-blocking structure, and described light-blocking structure is in fixed barriers on light hole and active catch tabula rasa between light hole.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105058367A (en) * 2015-08-20 2015-11-18 宁波大学 Manufacturing process for four-degree-of-freedom piezoelectric micro-gripper
CN107285269A (en) * 2017-06-23 2017-10-24 中国科学院苏州纳米技术与纳米仿生研究所 Mems device and preparation method thereof
CN110392857A (en) * 2017-03-14 2019-10-29 浜松光子学株式会社 Optical assembly

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US20030063891A1 (en) * 2001-09-29 2003-04-03 Samsung Electronics Co., Ltd. Variable optical attenuator having waveguides and MEMS actuator
JP2004025396A (en) * 2002-06-27 2004-01-29 Japan Aviation Electronics Industry Ltd Micro movable device
CN101196595A (en) * 2007-07-03 2008-06-11 华东师范大学 Production method for electric-controlled adjustable optical attenuator chip

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EP1091219A2 (en) * 1999-10-08 2001-04-11 Lucent Technologies Inc. Optical attenuator
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JP2004025396A (en) * 2002-06-27 2004-01-29 Japan Aviation Electronics Industry Ltd Micro movable device
CN101196595A (en) * 2007-07-03 2008-06-11 华东师范大学 Production method for electric-controlled adjustable optical attenuator chip

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105058367A (en) * 2015-08-20 2015-11-18 宁波大学 Manufacturing process for four-degree-of-freedom piezoelectric micro-gripper
CN105058367B (en) * 2015-08-20 2017-03-01 宁波大学 A kind of processing technology of four-degree-of-freedom piezoelectric microgripper
CN110392857A (en) * 2017-03-14 2019-10-29 浜松光子学株式会社 Optical assembly
CN110392857B (en) * 2017-03-14 2021-09-21 浜松光子学株式会社 Optical assembly
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CN107285269A (en) * 2017-06-23 2017-10-24 中国科学院苏州纳米技术与纳米仿生研究所 Mems device and preparation method thereof

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