CN103354222B - For the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device - Google Patents
For the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device Download PDFInfo
- Publication number
- CN103354222B CN103354222B CN201310238613.4A CN201310238613A CN103354222B CN 103354222 B CN103354222 B CN 103354222B CN 201310238613 A CN201310238613 A CN 201310238613A CN 103354222 B CN103354222 B CN 103354222B
- Authority
- CN
- China
- Prior art keywords
- layer
- optics
- electronic device
- ceramic
- pattern layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to a kind of Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device, comprise metallic matrix, and on described metallic matrix, be formed with withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively; Between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is active soldering layer, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and active soldering layer and form multiple isolation pedestal; Described isolation pedestal is formed with metal circuitry.Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device of the present invention, there is larger sized metal substrate, and multiple optics and/or electronic device can be held, and there is between described multiple optics and/or electronic device good electric isolution and heat isolation.
Description
Technical field
The invention belongs to electronic technology field, in particular, the present invention relates to a kind of Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device.
Background technology
For the device of optics and/or electronics, as integrated circuit or laser diode all need to utilize heat conducting material to conduct heat.Need to adopt metallic matrix for this reason, as Copper substrate, and often need electric isolution between the device and metallic matrix of described optics and/or electronics.And some ceramic material has higher heat conduction efficiency and to electricity be insulation.For this reason through using the ceramic material of high heat conduction as providing electric isolution and the still conductive intermediate materials of maintaining heat between the device and metallic matrix of be everlasting optics and/or electronics.In order to provide from the device of optics and/or electronics to the efficient heat transfer of metallic matrix, between pottery and metallic matrix, good hot interface is provided to be required.
And in increasing application, need multiple optics and/or electronic device in the functional structure with electric isolution and heat conduction.And in order to hold multiple optics and/or electronic device, need to use larger sized basis material, such as need to use larger metallic matrix and ceramic wafer.If but by described multiple optics and/or electronic device to the ceramic component at single interface time, then will cause difficult heat transfer between the optics of each coupling and/or electronic device, and may electrical conductivity be caused and be short-circuited.For this reason, need between multiple optics and/or electronic device, provide electric isolution and heat isolation.
Summary of the invention
In order to solve above-mentioned technical problem of the prior art, the object of the present invention is to provide a kind of Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device.
To achieve these goals, present invention employs following technical scheme:
The present invention relates to a kind of Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device, comprise metallic matrix, described metallic matrix is formed withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively; Between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is active soldering layer, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and active soldering layer and form multiple isolation pedestal; And on described isolation pedestal, be formed with metal circuitry.
Wherein, the thickness of described withstand voltage ceramic layer is 10-500um; Described withstand voltage ceramic layer is selected from aluminium oxide, one or more in aluminum oxynitride or carborundum.
Wherein, described withstand voltage ceramic layer is prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
Wherein, the thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500um; And described highly heat-conductive carbon/ceramic enamel coating is AlN, AlON or SiN.
Wherein, described highly heat-conductive carbon/ceramic enamel coating is prepared by powder sintering.
Wherein, between described metallic matrix and withstand voltage ceramic layer, there is transition zone.
Wherein, described transition zone is prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
Wherein, the solder that described active soldering layer uses contains the B of Ce, 0.1-0.2wt% of Ni, 0.5-0.7wt% of Mn, 1.8-2.1wt% of Al, 0.65-0.95wt% of Sn, 2.7-3.2wt% of Si, 5.2-7.2wt% of Ti, 1.2-1.5wt% of In, 2.1-2.5wt% of Ag, 0.8-1.0wt% of 0.5-0.8wt% and the Cu of surplus.
Wherein, described metal circuitry by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition metal level, and obtains described metal circuitry by dry ecthing; Or the mode also sintered by direct type metal slurry is made.
Technical scheme of the present invention has following beneficial effect compared to existing technology:
(1) the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device of the present invention, there is larger sized metal substrate, and multiple optics and/or electronic device can be held, and there is between described multiple optics and/or electronic device good electric isolution and heat isolation.
(2) of the present invention in the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device, the thermal conductivity of described highly heat-conductive carbon/ceramic enamel coating is greater than 50W/mK, radial effective heat transfer and transfer can be realized, solve the heat dissipation problem of optics and/or electronic unit; But also there is high electric-breakdown resistance energy.
Accompanying drawing explanation
Fig. 1 for described in embodiment 1 for the schematic diagram of the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device.
Fig. 2 for described in embodiment 2 for the schematic diagram of the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device.
Embodiment
The Multi-layer composite ceramic pattern layers structural substrate of optics of the present invention and electronic device, comprises metallic matrix, and described metallic matrix is formed withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively; Between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is active soldering layer, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and active soldering layer and form multiple isolation pedestal; And on described isolation pedestal, be formed with metal circuitry.The thickness of described withstand voltage ceramic layer is 10-500um; Described withstand voltage ceramic layer is selected from aluminium oxide, the one in aluminum oxynitride or carborundum.The thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500um; And be preferably AlN, AlON or SiN.Described transition zone can be prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.Engaged by active soldering between described metal substrate with withstand voltage ceramic layer, the solder that described active soldering uses contains the B of Ce, 0.1-0.2wt% of Ni, 0.5-0.7wt% of Mn, 1.8-2.1wt% of Al, 0.65-0.95wt% of Sn, 2.7-3.2wt% of Si, 5.2-7.2wt% of Ti, 1.2-1.5wt% of In, 2.1-2.5wt% of Ag, 0.8-1.0wt% of 0.5-0.8wt% and the Cu of surplus.The solder that described active soldering uses is prepared by water fog method, its preparation method comprises the following steps: (1) is by the mixing of the metal dust raw material of said ratio and heat fused forms aluminium alloy, utilize the atomized water of pressure >=40MPa to carry out cooling crush process to described aluminium alloy, form alloy powder; (2) drying is carried out to described alloy powder and reduced anneal process obtains described solder, wherein reduced anneal atmosphere adopts hydrogen annealing, annealing temperature is 250-300 DEG C, annealing time is 20-30 minute, oxygen content <2500ppm in described rare earth pre-alloyed powder after reduced anneal.In the present invention, described solder changes to fill a prescription in the past and welds once lack of homogeneity by after simple substance powder mixing soldering, the easy deviation of composition, brazing temperature is higher, the shortcomings such as grade of quality stability difference, improve the wettability between brazing layer and metallic matrix and ceramic layer, and improve the reliability of brazing layer metallurgical, bond.
embodiment 1
As shown in Figure 1, the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device described in the present embodiment, comprises aluminum or aluminum alloy matrix 10, described matrix 10 is formed with Al successively
2o
3withstand voltage ceramic layer 20 and AlN highly heat-conductive carbon/ceramic enamel coating 40; Described Al
2o
3between withstand voltage ceramic layer 20 and AlN highly heat-conductive carbon/ceramic enamel coating 40, there is active soldering layer 30, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and active soldering layer and form multiple isolation pedestal 50; And on described isolation pedestal, be formed with metal circuitry (not shown).Described Al
2o
3the step of withstand voltage ceramic layer adopts following technique, and its reaction system is AlCl
3-H
2o-O
2-H
2, reaction temperature is 420-500 DEG C, and operating pressure is 1200Pa, wherein AlCl
3flow be 50ml/min, H
2the flow of O is 10-20ml/min, O
2flow be 15-20ml/min, H
2flow be 500ml/min, film thickness is 200 μm.And described AlN highly heat-conductive carbon/ceramic enamel coating is prepared by powder sintering, and highly heat-conductive carbon/ceramic porcelain thickness is 200 μm.The solder of described active soldering layer adopts above-mentioned water fog method to prepare, and contains the B of Ce, 0.1wt% and the Cu of surplus of Ni, 0.5wt% of Mn, 1.8wt% of Al, 0.65wt% of Sn, 2.7wt% of Si, 7.2wt% of Ti, 1.5wt% of In, 2.1wt% of Ag, 0.8wt% of 0.5wt% in the solder used.The breakdown voltage resistant of the structure obtained by this embodiment is greater than 5.0kV, and the thermal conductivity of described ceramic coating is greater than 100W/mK.Structure described in the present embodiment may be used for the electronic device such as optics or wiring board of such as LED etc., and can on single metal substrate the multiple optics of intensive laying and/or electronic device, and the heat transfer between described multiple optics and/or electronic device and conductivity need not be worried.
embodiment 2
As shown in Figure 2, the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device described in the present embodiment, comprises aluminum or aluminum alloy matrix 10, described matrix 10 is formed with Al successively
2o
3withstand voltage ceramic layer 20 and AlN highly heat-conductive carbon/ceramic enamel coating 40; Described Al
2o
3between withstand voltage ceramic layer 20 and AlN highly heat-conductive carbon/ceramic enamel coating 40, there is active soldering layer 30; Described aluminum or aluminum alloy matrix 10 and Al
2o
3between withstand voltage ceramic layer 20, there is aluminium transition zone 60, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and active soldering layer and form multiple isolation pedestal 50; And on described isolation pedestal, be formed with metal circuitry (not shown).Wherein, the step of described aluminium transition zone adopts following technique: suction to 5.0 × 10-4Pa, the Ar that purity is 99.99% is passed into vacuum coating indoor, flow 20sccm, and keep the working vacuum degree of vacuum coating indoor to be 50Pa, open a pair mid frequency sputtering power supply with aluminium target sputter cathode, power 10kW; Open grid bias power supply, grid bias power supply is high-frequency impulse grid bias power supply, voltage 50V, frequency 20kHz, and duty ratio 90% replaces, and substrate deposition temperature remains on 20 DEG C simultaneously, sedimentation time 2 minutes, and deposit thickness is 200nm; Described transition zone is nonconductive structures, and thermal conductivity is good, adopts this transition zone to improve caking property, and can also improve the thermal conductivity of described system further.Described Al
2o
3the step of withstand voltage ceramic layer adopts following technique, and its reaction system is AlCl
3-H
2o-O
2-H
2, reaction temperature is 420-500 DEG C, and operating pressure is 1200Pa, wherein AlCl
3flow be 50ml/min, H
2the flow of O is 10-20ml/min, O
2flow be 15-20ml/min, H
2flow be 500ml/min, film thickness is 200 μm.And described AlN highly heat-conductive carbon/ceramic enamel coating is prepared by powder sintering, and highly heat-conductive carbon/ceramic porcelain thickness is 200 μm.The solder of described active soldering layer adopts above-mentioned water fog method to prepare, and contains the B of Ce, 0.1wt% and the Cu of surplus of Ni, 0.5wt% of Mn, 1.8wt% of Al, 0.65wt% of Sn, 2.7wt% of Si, 7.2wt% of Ti, 1.5wt% of In, 2.1wt% of Ag, 0.8wt% of 0.5wt% in the solder used.The breakdown voltage resistant of the structure obtained by this embodiment is greater than 5.0kV, and the thermal conductivity of described ceramic coating is greater than 100W/mK.Structure described in the present embodiment may be used for the electronic device such as optics or wiring board of such as LED etc., and can on single metal substrate the multiple optics of intensive laying and/or electronic device, and the heat transfer between described multiple optics and/or electronic device and conductivity need not be worried.
For the ordinary skill in the art, be to be understood that and can without departing from the scope of the present disclosure, equivalent replacement or equivalent transformation form can be adopted to implement above-described embodiment.Protection scope of the present invention is not limited to the specific embodiment of embodiment part, as long as no the execution mode departing from invention essence, within the protection range being all interpreted as having dropped on application claims.
Claims (8)
1., for a Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device, comprise metallic matrix, it is characterized in that on described metallic matrix, be formed with withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively, between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is active soldering layer, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and active soldering layer and form multiple isolation pedestal, described isolation pedestal is formed with metal circuitry, the solder that described active soldering layer uses contains the Ag of 0.5-0.8wt%, the In of 0.8-1.0wt%, the Ti of 2.1-2.5wt%, the Si of 1.2-1.5wt%, the Sn of 5.2-7.2wt%, the Al of 2.7-3.2wt%, the Mn of 0.65-0.95wt%, the Ni of 1.8-2.1wt%, the Ce of 0.5-0.7wt%, the B of 0.1-0.2wt% and the Cu of surplus, the solder that described active soldering layer uses is prepared by water fog method, its preparation method comprises the following steps: (1) is by the mixing of the powder stock of said ratio and heat fused forms aluminium alloy, the atomized water of pressure >=40MPa is utilized to carry out cooling crush process to described aluminium alloy, form alloy powder, (2) drying is carried out to described alloy powder and reduced anneal process obtains described solder, wherein reduced anneal atmosphere adopts hydrogen annealing, annealing temperature is 250-300 DEG C, and annealing time is 20-30 minute, oxygen content <2500ppm in described solder after reduced anneal.
2. the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device according to claim 1, is characterized in that the thickness of described withstand voltage ceramic layer is 10-500um; Described withstand voltage ceramic layer is selected from aluminium oxide, one or more in aluminum oxynitride or carborundum.
3. the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device according to claim 1 and 2, it is characterized in that described withstand voltage ceramic layer is by sputtering, evaporation, arc deposited, or chemical vapour deposition (CVD) prepares.
4. the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device according to claim 1, is characterized in that the thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500um; And described highly heat-conductive carbon/ceramic enamel coating is AlN, AlON or SiN.
5. the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device according to claim 4, is characterized in that described highly heat-conductive carbon/ceramic enamel coating is prepared by powder sintering.
6. the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device according to claim 1, is characterized in that having transition zone between described metallic matrix and withstand voltage ceramic layer.
7. the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device according to claim 6, it is characterized in that described transition zone is by sputtering, evaporation, arc deposited, or chemical vapour deposition (CVD) prepares.
8. the Multi-layer composite ceramic pattern layers structural substrate for optics and electronic device according to claim 1 and 2, it is characterized in that described metal circuitry is by sputtering, evaporation, arc deposited, or chemical vapour deposition (CVD) metal level, and obtain described metal circuitry by dry ecthing; Or the mode also sintered by direct type metal slurry is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310238613.4A CN103354222B (en) | 2013-06-17 | 2013-06-17 | For the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310238613.4A CN103354222B (en) | 2013-06-17 | 2013-06-17 | For the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103354222A CN103354222A (en) | 2013-10-16 |
| CN103354222B true CN103354222B (en) | 2016-01-13 |
Family
ID=49310572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310238613.4A Active CN103354222B (en) | 2013-06-17 | 2013-06-17 | For the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103354222B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5213877A (en) * | 1991-05-02 | 1993-05-25 | Mitsubishi Materials Corporation | Ceramic substrate used for fabricating electric or electronic circuit |
| DE19743289C2 (en) * | 1997-09-30 | 2000-02-17 | Siemens Ag | Multi-level intermediate carrier substrate with high wiring density, in particular for multichip modules, and method for its production |
| CN103058699A (en) * | 2011-10-19 | 2013-04-24 | 光颉科技股份有限公司 | Method for selective metallization on ceramic substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4441671B2 (en) * | 2003-09-22 | 2010-03-31 | Ｄｏｗａメタルテック株式会社 | Method for manufacturing metal-ceramic bonding circuit board |
| JP5299321B2 (en) * | 2010-03-09 | 2013-09-25 | 株式会社村田製作所 | Plating method |
-
2013
- 2013-06-17 CN CN201310238613.4A patent/CN103354222B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5213877A (en) * | 1991-05-02 | 1993-05-25 | Mitsubishi Materials Corporation | Ceramic substrate used for fabricating electric or electronic circuit |
| DE19743289C2 (en) * | 1997-09-30 | 2000-02-17 | Siemens Ag | Multi-level intermediate carrier substrate with high wiring density, in particular for multichip modules, and method for its production |
| CN103058699A (en) * | 2011-10-19 | 2013-04-24 | 光颉科技股份有限公司 | Method for selective metallization on ceramic substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103354222A (en) | 2013-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105777210B (en) | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof | |
| CN111455205B (en) | Preparation method of high-thermal-conductivity low-expansion Diamond-Cu composite material with sandwich structure | |
| CN102409299B (en) | Preparation method of oxide ceramic sputtering target | |
| CN106958009A (en) | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof | |
| CN103467140A (en) | Surface metalized layer of silicon carbide ceramic and metalizing method of silicon carbide ceramic | |
| CN112851406B (en) | Method for coating nickel or nickel alloy on surface of aluminum nitride ceramic | |
| CN102409300B (en) | Oxide ceramic sputtering target and preparation method thereof and used brazing alloy | |
| CN103338588B (en) | High heat conductive insulating metal base printed circuit board | |
| CN103327735B (en) | High heat conductive insulating metal base printed circuit board | |
| CN103917043B (en) | Patterned multi-insulating-material circuit substrate | |
| CN103354219B (en) | For the patterning functional structure substrate of optics and electronic device | |
| CN103354221B (en) | For many ceramic layers pattern structure substrate of optics and electronic device | |
| CN103354699B (en) | Many ceramic layers printed substrate | |
| CN103354698B (en) | For the patterning ceramic layer printed circuit substrate of optics and electronic device | |
| CN103354222B (en) | For the Multi-layer composite ceramic pattern layers structural substrate of optics and electronic device | |
| CN103354697B (en) | For the patterning composite ceramic layer printed circuit substrate of optics and electronic device | |
| CN103354220B (en) | For the pattern structure substrate of optics and electronic device | |
| CN202918581U (en) | Ceramic substrate based on DLC thin film coating | |
| CN103354269B (en) | High reliability SMD LED encapsulation structure | |
| CN103855125B (en) | High heat conducting pattern circuit substrate | |
| CN103325743B (en) | High stability insulation heat-conducting substrate | |
| CN203339213U (en) | High thermal conductivity fluorescence insulation LED packaging structure | |
| CN103354254B (en) | Many ceramic layers LED encapsulation structure | |
| CN103325921B (en) | High heat conduction fluorescence insulation LED package structure | |
| CN103346241B (en) | The encapsulating structure of white led lamps |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee after: SUZHOU JINGPIN ADVANCED MATERIALS Co.,Ltd. Address before: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee before: SUZHOU JINGPIN OPTOELECTRONICS Inc. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20230822 Address after: No. 15 Tianyuan Road, Tianhuangping Town, Anji County, Huzhou City, Zhejiang Province, 313000 (self declared) Patentee after: Zhejiang Yunyin Technology Co.,Ltd. Address before: 215,211 Floor 3, Scientific Research Building 2, Science Park, No. 558, Fenhu Avenue, Fenhu Town, Wujiang District, Suzhou, Jiangsu Province (South) Patentee before: SUZHOU JINGPIN ADVANCED MATERIALS Co.,Ltd. |
|
| TR01 | Transfer of patent right |