CN103299418A - 单层金刚石颗粒散热器及其相关方法 - Google Patents
单层金刚石颗粒散热器及其相关方法 Download PDFInfo
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Abstract
本发明公开了一种降低热致缺陷的热调节半导体装置及相关方法。该装置可包括一散热器,该散热器具有:在一薄金属基体内的单层金刚石颗粒;一半导体材料,其热耦合至该散热器。其中,在该散热器与该半导体材料之间的热膨胀系数差异少于或等于50%。
Description
优先权信息
本申请案主张分别于2010年9月21日及2011年3月29日向美国专利局提出之美国专利第61/384,976号以及第61/468,917号之申请案之优先权,其中该些案所揭露之内容全部并入本案参考。
技术领域
本发明涉及一种降低热致缺陷的热调节半导体装置及其相关方法。
背景技术
半导体工业的进展是依据摩尔定律进行的,摩尔定律是1965年由英特尔(Intel)的共同创立人Gordon Moore所发现的。此种趋势使得集成电路(IC)或半导体芯片的集成水平可每18个月增加一倍。随之而来的是设计上的挑战,其中一种挑战是散热设计。而该设计却经常被忽略,或是在元件的最后生产阶段才被加入。根据热力学第二定律,当一封闭系统中进行更多的功率时,会得到更高的熵(entropy)。随着中央处理器(CPU)的电力增加,较大的电流会产生更多的热。因此,为了防止电路短路或燃烧,必须将熵所产生的热移除。就现有技术中而言,CPU的电力通常为约70瓦(W)或以上。例如,0.13微米技术的CPU的瓦数可能超过100瓦。目前的散热方法,如金属(如,铝或铜)鳍片散热器、以及挥发散热管,可能会不足以作为新一代CPU的冷却装置。
半导体装置会在使用期间产生大量的热。因此散热材料通常是热耦荷至此种半导体装置,以为了通过表面区域达到更快速的散热效果。其中一种已被使用的散热材料是铜。然而,此种设计具有缺点。铜的热膨胀系数(coefficient of thermal expansion,CTE)是大部分半导体的三倍以上。而由于此缺点,如LED等半导体装置这种需在高温中操作的装置会产生内应力,且在某些情形下,该应力会造成热致缺陷,如微裂痕、层分离及类似的缺陷。由于两种材料的热膨胀及收缩的速率不同,此种缺陷最初会在铜与半导体之间的界面产生,并导致半导体的损坏。
发明内容
本发明提供一种降低热致缺陷的热调节半导体装置及其相关方法。在本发明的一实施方式中,例如,一种降低热致缺陷的热调节半导体装置,其包括一散热器,该散热器包括位于一薄金属基体内的单层金刚石颗粒,以及一半导体材料,该半导体材料热耦合至该散热器。在本发明一实施方式中,该散热器与半导体材料之间的热膨胀系数差异少于或等于约50%。在本发明另一实施方式中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约5.0ppm/℃。在又一实施方式中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约3.0ppm/℃。在又再一实施方式中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约1.0ppm/℃。
本发明还提供一种降低散热器与半导体装置之间的热致缺陷的方法。在本发明一实施方式中,该方法包括:设置单层金刚石颗粒于一薄金属散热器中;以及将该散热器热耦合至一半导体材料,其中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约50%。本发明另一实施方式中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约5.0ppm/℃。在又一实施方式中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约3.0ppm/℃。在再一实施方式中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约1.0ppm/℃。
在另一实施方式中,设置该单层金刚石颗粒于薄金属散热器中的步骤还包括:将该单层金刚石颗粒涂布于一第一金属层;并在该第一金属层上设置一第二金属层,使该单层金刚石颗粒夹置于其间。接着,利用充分的加热和压力,一起挤压该第一及第二金属层,以将金刚石颗粒固定于金属层中。于一具体实施方式中,第一及第二金属层的至少一者的厚度少于或等于约200μm。在另一具体实施方式中,第一及第二金属层的至少一者的厚度少于或等于约100μm。
在又另一实施方式中,设置该单层金刚石颗粒于薄金属散热器中的步骤还包括:设置该单层金刚石颗粒于一金属粉末中;并利用充分的加热以烧结该金属粉末,并施压以固定该金刚石颗粒于已烧结的金属中。在再一具体实施方式中,设置该单层金刚石颗粒于金属粉末中的步骤还包括:将该单层金刚石颗粒涂布于一金属层上;以及涂布金属粉末于该金属层和金刚石颗粒上。
在再一实施方式中,设置该单层金刚石颗粒于薄金属散热器的步骤还包括:将该单层金刚石颗粒涂布于一金属基板上;将该金属基板置于一含金属离子的离子溶液中;以及通入电流至该离子溶液,使一金属层电镀形成于该金属基板上,以稳固该金刚石颗粒。
在本发明中,该散热器可以实施为各种实施方式。该散热器可具有任何可用的厚度,在某些情形下,薄型散热器可更容易地装设于半导体装置中。而某些情形下,散热器的厚度范围例如为约50μm至300μm。在另一实施方式中,散热器的厚度范围为约100μm至200μm。此外,任何可作为本发明的散热器的材料皆包含于本发明的范围中。在一实施方式中,散热器的材料例如可包括:铝、铜、金、银、铂、及相似物,以及其合金。在一具体实施方式中,该散热器包括铜。在又一实施方式中,该散热器包括铝。
任何可帮助热调整的半导体材料皆可用于本发明中,并应视为在本发明的范围内,其例子包括但不限于:硅、碳化硅、硅化锗(silicon germanium)、砷化镓(gallium arsenide)、氮化镓(gallium nitride)、锗(germanium)、硫化锌(zinc sulfide)、磷化镓(gallium phosphide)、锑化镓(gallium antimonide)、砷磷化镓铟(gallium indium arsenide phosphide)、磷化铝(aluminum phosphide)、砷化铝(aluminum arsenide)、砷化铝镓(aluminum gallium arsenide)、氮化镓(gallium nitride)、氮化硼(boron nitride)、氮化铝(aluminum nitride)、砷化铟(indium arsenide)、磷化铟(indium phosphide)、锑化铟(indium antimonide)、氮化铟(indium nitride)及相似物,以及其组合。在一实施方式中,半导体材料可包括氮化镓、氮化铝、或其组合。
在另一实施方式中,提供一种降低热致缺陷的热调节半导体装置。该装置可包括:一散热器,其包括一薄金属层;一第一单层金刚石颗粒,其设置于薄金属层的一侧;一第二单层金刚石颗粒,其设置于相对该第一单层金刚石颗粒的另一侧;以及一金属基体,其是将该第一及第二单层金刚石颗粒结合至该薄金属层。该装置还包括一半导体材料,其热耦合至该散热器,其中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于约50%。
附图说明
图1是本发明的一实施例的散热器的示意图;
图2是本发明的一实施例的降低散热器与半导体装置间热致缺陷的方法的流程图;
图3是各种材料的热膨胀系数与导热率的关系图;
图4是本发明的一实施例的散热器的示意图。
应理解,上述附图仅用于进一步解释以便理解本发明的要旨。所述附图中并未标示比例,因此其中的尺寸、颗粒大小、以及其他形态仅是为了(且通常)适当地使所述说明更为清楚。因此,亦可使用不同的尺寸以及形态来制备本发明的散热器。
具体实施方式
在详细解释本发明之前,应了解本发明不限于在此所描述的该特定结构、方法步骤或材料,而可扩大或延伸至其等同物,只要对于所属技术领域的技术人员是显而易见。并且,应了解的是,在此所用的文字发、词汇仅用于描述特定实施例,而非限制本发明。
本发明中的说明书以及权利要求书中的单数用词“一”、“一个”以及“该”等,除非文中有清楚的额外注释,应理解为不是对其数量的限制为单个,而应理解为其数量也可以是“多个”。因此,“一金刚石颗粒”包括一个或多个这种颗粒,而“该层”也是指一个或多个层。
定义
本发明的说明书及权利要求书中,下面的术语将被用到,在此先对其进行定义。
在此,“颗粒”是指金刚石颗粒,且表示为金刚石的颗粒型态。此颗粒可具有各种形状,包括:圆形、椭圆形、方块形、自形的(euhedral)等,也可为单晶或多晶;且可具有各种筛孔大小。D公知技术中,“筛孔”是指美国筛孔(U.S.meshes)中,每单位面积的孔洞数目。在此所指的筛孔大小,除非有另行注释,皆指美国筛孔大小。再者,由于具有某“筛孔大小”的颗粒实际上具有一小的尺寸分布范围,因此筛孔大小是指所收集得到的颗粒的平均筛孔尺寸。在此,“散热器”是指一可耗散或传导热,并将热量由热源导出的材料或复合物。
在此,“热源”是指一具有某一热量或大于该热量的装置或物体。热源可包含由于工作产生副产物为热的装置,以及受到另一热源传热而加热至某高于预期温度的物体。
在此,“烧结”是指将二种或以上的独立颗粒连结而形成一连续固态团块。该烧结的步骤包括:将颗粒共固化至至少部份地消除颗粒之间的空隙。一般金刚石颗粒的烧结需要超高压以及碳溶剂的存在,碳溶剂以作为金刚石烧结助剂。
在此,“金属性(metallic)”是指金属以及类金属(metalloid)。金属包括一般被认为是金属(来自过渡金属、碱金属、及碱土金属在内)的物质。举例而言,金属可为银(Ag)、金(Au)、铜(Cu)、铝(Al)及铁(Fe)。类金属具体包括硅(Si)、硼(B)、锗(Ge)、锑(Sb)、砷(As)及碲(Te)。金属材料也包括合金或包括金属材料的混合物。此合金或混合物还可包括额外的添加物。在本发明中,包括以碳化物形成物(carbide former)及碳湿润剂(carbon wettingagent)作为添加物的合金或混合物,但并不意味着其是唯一的金属组成。碳化物形成物可为如钪(Sc)、钇(Y)、钛(Ti)、锆(Zr)、铪(Hf)、钒(V)、铌(Nb)、铬(Cr)、钼(Mo)、锰(Mn)、钽(Ta)、钨(W)及鎝(Tc)。碳湿润剂可为如钴(Co)、镍(Ni)、锰(Mn)及铬(Cr)。
在此,“化学键(chemical bond)”及“化学键结(chemical bonding)”可互换使用,其表示一分子键,其可提供原子间的吸引力,使其足够在原子间的中间面产生一种二元固态化合物。
在本文中,“熔渗(infiltrating)”意指当一材料加热至其熔点,接着以液态形式流动经过粒子间的间隙空洞。
在此,“等级(grade)”一词是表示金刚石颗粒的质量。较高等级是表示金刚石具有较少的缺陷以及异质。人工合成金刚石比天然金刚石更容易在制造过程中产生异质物。具有较少瑕疵和异质物的金刚石具有较佳的热传导性,因此较适合用于本发明中。此外,具有瑕疵及较多异质物的金刚石会于某些制成条件中容易毁损。选择高等级的金刚石是表示除了依照如尺寸、价钱、及/或形状进行筛选之外还对于金刚石进行有意识的选择。较高等级的金刚石代表着在制备最低有效等级金刚石颗粒的步骤后再增加至少一个步骤,通常为多于一个步骤。相较于具有相同尺寸的金刚石,此多出的等级一般会增加成本。高等级或更高等级的金刚石颗粒的例子包括Diamond Innovations MBS-960、Element Six SDB1100以及Iljin DiamondISD1700。
在本文中,“实质上(substantially)”一词意指一动作、特征、特性、状态、结构、项目、或结果具有完全的或接近完全的范围或程度。举例而言,一“实质上”封闭的物体意指该物体不是完全地封闭就是接近完全地封闭。相较于绝对的完整,其确切可接受的误差程度可视文中具体情况而定。然而,一般谈到“接近完全”可视为与“绝对“及”完全”具有相同的整体效果。
“实质上(substantially)”一词可同样地应用于负面含意,其意指一动作、特征、特性、状态、结构、项目、或结果为完全的或接近完全的缺乏。举例而言,一组成物“实质上没有”颗粒意指该组成物不是完全地缺乏颗粒就是接近完全地缺乏颗粒,其影响如同完全地缺乏颗粒一样。换句话说,一“实质上没有”一成分或元素的组成物,只要不具有重要的影响,实际上可仍包含此项目(指该成分或元素)。
在本文中,“约(about)”一词意指提供一数值范围端点的弹性空间,即一给定值可以“稍微高于”或“稍微低于”此数值端点。
在本文中,多个项目、结构元素、组成元件及/或材料可能为了方便而以一般的列举来呈现。然而,这些列举应解释为每个列举元件可以为单独且独特的元件。因此,基于一般呈现而未相对的其他描述的集合内,此列举的单独元件不需要单独地被解释为事实上相等于其他相同列举出的元件。
本文中,浓度、含量或其它数据可以用一范围形式以表达或呈现。应了解所述范围形式仅为方便和简洁而使用,因此应被弹性地解释,数值不仅包括明确列举的范围界限,而且包括所述范围内包含的所有单独数值或子范围,如同各数值和子范围被明确列举一样。例如,“大约1微米到大约5微米”的数值范围应被解释为不仅包括大约1微米到大约5微米的明确列举的值,而且包括所指范围内的单独值和子范围。于是,所述数值范围中包括的为诸如2、3和4的单独值以及诸如从1~3、从2~4、与从3~5等的子范围,以及1、2、3、4、及5。相同原理适用于仅列举一个数值的范围的最小或最大值。此外,不管被描述范围的幅度或特性,此解释都将适用。
发明人发现,当散热器具有与半导体装置或材料相近的热膨胀系数(coefficient of thermal expansion,CTE)时,可直接与该半导体耦合,而不需再使用热介材料(thermal interface material,TIM)。使用相配的热膨胀系数,可大幅减少热致缺陷(如,微裂痕、层分离、以及相似情形),而这些缺陷经常是在加热及冷却中,由于半导体材料以及散热器的膨胀及/或收缩速率不同而造成。
金刚石材料的热传导率一般比铜大2至4倍。然而,金刚石的CTE约为铜的1/10。因此,将金刚石材料导入至散热器基体(matrix)(如铜)并结合,则可增加散热器的热传导率,且同时可提供更一致的CTE与该半导体相配。在许多情形中,散热器可直接结合至半导体材料。图3显示了不同材料的热膨胀系数以及热传导率。
然而,将金刚石材料(如金刚石颗粒)设置于散热器基体(如铜)中,可能是一种挑战。例如,融熔铜不易湿润金刚石颗粒。因此,将金刚石颗粒以融溶铜熔渗可能需要非常的高压,例如六面顶压机所产生的压力。而使用此高压装置的必要性则限制了散热器的尺寸,且会提高生产成本。
本发明的发明人发现了用于稳固金刚石颗粒于散热器基体的技术。如此,可将金刚石颗粒容易地加入至散热器中,以增加热传导率,并调整其CTE更接近半导体材料的CTE。由于热循环,此种装置可降低在散热器与半导体之间的界面应力,而使减少热致缺陷的产生。
在此,所示的实施方式的各种细节可应用至各种散热器、热控制系统、及其制备方法。因此,在探讨某一特殊实施方式时,其可推及至支持本说明书中其他的相关实施方式。
由此,本发明提供了一种装置、系统以及促进半导体装置的热调节方法。如图1所示,本发明一实施方式中提供一种降低热致缺陷的热调节半导体装置。此装置可包含有一散热器,其具有在一薄金属基体14内的单层金刚石颗粒12。且此装置还可包括一半导体材料16,其热耦合至散热器10。在一例子中,在该散热器与该半导体材料之间的热膨胀系数差异少于或等于约50%。在另一例子中,在该散热器与该半导体材料之间的热膨胀系数差异少于或等于约5.0ppm/C°。在另一例子中,在该散热器与该半导体材料之间的热膨胀系数差异少于或等于约3.0ppm/C°。在又一例子中,在该散热器与该半导体材料之间的热膨胀系数差异少于或等于约1.0ppm/C°。在另一例子中,在该散热器与该半导体材料之间的热膨胀系数差异少于或等于约0.5ppm/C°。在再一例子中,在该散热器与该半导体材料之间的热膨胀系数差异少于或等于约0.25ppm/C°。散热器热耦合至半导体材料的方式的许多方法均可被使用。例如,以合金硬焊(brazing)、焊接、电镀及其类似的方法。一例子中,散热器可通过焊接层18耦合至半导体材料16。在另一例子中,散热器可通过热界面材料的中间层而耦合至半导体材料层。
具有单层金刚石颗粒的散热器可提供经济及有效的热量管理机制。将多个金刚石颗粒以单一颗粒厚度的单层方式设置于散热器中,使其连接于热源时,可作为热量管理的有效的经济的设计。某些例子中,实质上没有金刚石颗粒以单层之外的方式存在于金属或金属基体。于另一例子中,散热器可包括有多层金刚石颗粒,其与其它层不相同或为分离。
本发明的散热器可具有各种样式以及整体尺寸。任何样式或物理尺寸,只要金属或金属基体中包含有单层金刚石即应视为本发明的范畴。然而,于某些例子中,本发明的技术可使散热器装置薄型化,因此可容易地合并半导体装置及半导体系统。例如,某例子中,散热器厚度可为约50μm至300μm。于另一例子中,散热器厚度可为约100μm至200μm。于再另一例子中,散热器厚度可为约300μm至1mm。此外,当散热器的厚度为1mm以上时,也可视为在本发明的范围中。例如,散热器厚度可大于2mm,或是大于4mm。
单层金刚石颗粒的密度对于装置的热调节效果会有所影响。虽然任何金刚石颗粒的密度皆应包含在本发明范围内,但是,越大的封装程度则会产生更高的热调节性。例如,在一例子中,单层中的金刚石颗粒密度可为大于或等于50%。在另一例子中,单层中的金刚石颗粒密度可为大于或等于60%。在另一例子中,单层中的金刚石颗粒密度可为大于或等于70%。在再一例子中,单层中的金刚石颗粒密度可为大于或等于80%。在再一例子中,在单层内,实质上所有金刚石颗粒与至少一另一金刚石颗粒相接触。例如,在单层中,所有金刚石彼此相接触,则会达到100%的金刚石颗粒密度。
如上述,金刚石颗粒可用于增加散热器的热传导率,同时可调节或减少在散热器与半导体材料之间的CTE差异。许多因素皆可使散热器的热传导率增加,例如CTE的差异。例如,在某例子中,可使用较高等级的金刚石颗粒。如果金刚石颗粒含有不纯物或具有其他缺陷时,该低质量工业金刚石颗粒的热传导率将不会比金属材料(如,铜)更高。高质量金刚石颗粒比低质量金刚石颗粒具有较高的热传导。因此,使用较高等级金刚石颗粒可增加散热器的整体热传导率。
在另一实施方式中,具有规则形状的金刚石颗粒亦可增加散热器热传导率,如同提升CTE的相配性一样。根据装置的不同设计,优选为使用具有规则形状及/或尺寸的金刚石颗粒并将此等金刚石颗粒排列,以提升热调节性以及CTE的和缓。而各种因素可影响该目标。例如,在某一例子中,金刚石颗粒可直接与另一金刚石颗粒以物理性地接触,而此接触为金刚石-金刚石,而非金刚石-基体-金刚石(diamond-to-matrix-to-diamond)。例如,所制得的单层金刚石,其实质上所有单层中的金刚石颗粒与单层中的至少另一金刚石颗粒直接接触。因此,在某一例子中,实质上所有单层金刚石中的金刚石颗粒为金刚石-金刚石接触。在另一例子中,实质上所有单层金刚石中的金刚石颗粒直接与一或以上的金刚石颗粒接触并延伸,以提供一连续金刚石颗粒路径而用于热量流动。此外,在某些例子中,金刚石颗粒可与另一者在金属层内隔开,使许多或所有的金刚石颗粒不会与其他金刚石颗粒接触,或可实质上与其他金刚石颗粒接触。
在又一实施方式中,单层金刚石中的金刚石颗粒可经由相同或相似的方向排列,此排列可更提升热传导率并同时减少CTE的差异。除了相似的形状、尺寸、以及方向,单层金刚石中的金刚石颗粒彼此间的接触可为最大化。例如,一单层中具有面与面接触的金刚石颗粒的热调节性会大于单层中金刚石以边与边接触,或甚至为边与面的接触的热调节性。金刚石颗粒中互相接触面积的最大化可使热传导率提升。而将接触面积的最大化可通过使金刚石颗粒具有相同或相近尺寸来达成。虽然不论具有何种形状的金刚石皆可使用,但在一例子中,使用同样具有立方形状的金刚石颗粒可使单层中的金刚石颗粒的密度增加。
尺寸亦会影响金刚石颗粒的热量传导能力以及调节CTE差异。由于较大颗粒具有连续晶格,具有相同重量的多个金刚石颗粒的集结更高,使较大金刚石颗粒的热量传递更有效。在某一例子中,单层金刚石中的金刚石颗粒实质上具有相同的尺寸。虽然各种尺寸的金刚石皆可使用,一例子中,金刚石颗粒的尺寸范围可为约10μm至约2mm。在另一例子中,金刚石颗粒的尺寸范围可为约35μm至约1mm。在又一例子中,金刚石颗粒的尺寸范围可为约50μm至约200μm。
各种金属及金属性材料皆可使用于本发明的金属散热器中。这些材料可使用作为金属层、薄金属层、金属基体及相似物。任何导热金属或金属性材料,只要可稳固金刚石颗粒者,皆可用于本发明中。例如,某一例子中,金属性材料实质上可为纯金属性材料。“金属性”应理解为包括金属和金属合金(如,Si、B、Ge、Sb、As、及Te)。在另一例子中,金属性材料包括有多金属或金属混合物、合金、明显层、及相似物。其例子包括,铝、铜、金、银、铂、及其合金与混合物,但不限于此。在一具体实施方式中,金属散热器包括铜。在一具体实施方式中,可使钛包含于铜基体中,使金刚石颗粒具适当的润泽。
虽单层金刚石颗粒可设置于金属散热器的中心,但在某些实施方式中该单层可设置于接近于金属散热器层的一侧。此种设计中,具有单层金刚石的金属层一侧接近于表面,并可设置与该热源相近。因此,散热器中接近至热源的区域,可相对于远离热源的区域具有较高的热传导率。
应知道的是,在金刚石颗粒与及金属性或金属散热器间的界面热性质,可能会受到散热器的设计影响。例如,这些界面间的孔洞可能会成为热传递的阻碍。因此,散热器装置中,金刚石颗粒直接与单层中另一金刚石颗粒接触,以及金刚石与金属散热器材料致密接触,其将相较于未接触具有更高的热传导率。因此,金刚石颗粒可涂布有一材料以提升散热器的热传导率及/或改善在金刚石颗粒与金属散热器间的界面稳固。在一例子中,金刚石颗粒可被碳化成形物涂布。该可用于涂布于金刚石颗粒的材料的例子包括:钛、镍、铬及相似物,但不限于此。除了涂布以外,制备过程中可将金属基体在压力下熔渗入单层金刚石颗粒,使散热器的孔洞影响减少。
此外,本发明又提供一种降低在散热器与半导体装置间热致缺陷的方法,如图2所示。此方法包括:设置一单层金刚石颗粒于一金属散热器22中;以及将该散热器热耦合至一半导体材料24。设置单层金刚石颗粒于金属散热器中的方式可使用各种方法,而任何这些方式皆属于本发明的范畴中。在一例子中,设置单层金刚石颗粒于金属散热器中的方式可包括:将该单层金刚石颗粒涂布于一第一金属层;在该第一金属层上设置一第二金属层,使该单层金刚石颗粒夹置于其间;以及,利用充分地加热及压力,一起挤压该第一及第二金属层,以将金刚石颗粒固定于金属层中。不同于融熔金属熔渗方式,需要高温及高压,本发明的散热器可通过将单层金刚石颗粒于该二金属层间以一相对低的温度及压力下挤压形成。此外,由于金属层的薄形特性,使散热器可薄型化。例如,一例子中,第一和第二金属层的至少一层少于或等于约200μm的厚度。在另一例子中,第一和第二金属层的至少一层少于或等于约100μm的厚度。在又一例子中,第一和第二金属层的至少一层为约100μm至约3mm。在再一例子中,第一和第二金属层的至少一层为约500μm至约2mm。此外,在形成此装置的过程中,依据所使用的材料及装备,可使用不同的温度以及压力。例如,在一例子中,所使用的温度可为约700℃至约1000℃。在另一例子中,所使用的压力可为约10MPa至约50MPa。应知道的是,该金属层可具有各种实施方式。例如,在一例子中,一或以上的金属层可为固态金属,例如金属薄片。在另一例子中,一或以上的金属可为加压粉末。例如,将金属粉末置放于模具中,并冷压已形成一金属层。
本发明另一实施方式中,设置该单层金刚石颗粒于金属散热器中的步骤可包括:设置该单层金刚石颗粒于一金属粉末中;以及利用充分地加热以烧结该金属粉末,并挤压该金刚石颗粒以固定于已烧结金属中。此实施方式中,金属粉末烧结可在散热器装置的形成中,使单层金刚石颗粒在低温及低压力下嵌埋于其中而形成。例如,在一例子中,温度范围为约700℃至约1000℃。在另一例子中,所使用的压力可为约10MPa至约50MPa。在一相关的实施方式中,设置该单层金刚石颗粒于一金属粉末中的步骤可包括:将该单层金刚石颗粒涂布于一金属层上;以及将该金属粉末涂布于该金属层以及金刚石颗粒上。该金属层、单层金刚石颗粒、以及该金属粉末,接着可以足够的温度与压力烧结,使金刚石颗粒嵌埋于其间。另一实施方式中,一金属硬焊材料可熔渗进入至该已烧结材料中。
在又一实施方式中,设置该单层金刚石颗粒于该金属散热器中的步骤可包括:将该单层金刚石颗粒涂布于一金属基板上;将该金属基板置于一含有金属离子的离子溶液中;以及通入电流至该离子溶液,使一金属层电镀形成于该金属基板上,以稳固该金刚石颗粒。如此方法,则可形成一嵌埋有单层金刚石颗粒的固态金属散热器。在另一实施方式中,金刚石颗粒可在电镀前经由硬焊(braze)以稳固至一金属基板。在此,任何金属或金属合金皆可用于硬焊(braze),只要其可使金刚石颗粒可以稳固至金属基板上即可。其例子包括,镍、镍合金、及相似物,但不限于此。
如上述,可将该具有嵌埋单层金刚石颗粒的金属散热器耦合至一半导体层。各种的半导体材料皆可使用,且依照半导体装置的预期设计而改变。半导体材料的例子包括:硅、碳化硅、硅化锗(silicon germanium)、砷化镓(gallium arsenide)、氮化镓(gallium nitride)、锗(germanium)、硫化锌(zincsulfide)、磷化镓(gallium phosphide)、锑化镓(gallium antimonide)、砷磷化镓铟(gallium indium arsenide phosphide)、磷化铝(aluminum phosphide)、砷化铝(aluminum arsenide)、砷化铝镓(aluminum gallium arsenide)、氮化镓(gallium nitride)、氮化硼(boron nitride)、氮化铝(aluminum nitride)、砷化铟(indium arsenide)、磷化铟(indium phosphide)、锑化铟(indium antimonide)、氮化铟(indium nitride)及其复合物,但不限于此。在一具体实施实施方式中,该半导体材料包括一选自于包括氮化镓、氮化铝、及其复合物的集合。
如上述,该金属散热器耦合至半导体层材料可使用各种方式进行,例如,硬焊、焊接或相似方法。在一例子中,散热器可使用焊接方式耦合至半导体层材料。散热器中所存在的单层金刚石颗粒可帮助调节在金属层与半导体间CTE的匹配性,使焊接(soldering)不会引起明显的热致缺陷。也就是说,由于半导体层以及熔渗金刚石颗粒的散热器中,因此膨胀及收缩在相似的速率,使层分离、微裂痕等缺陷可得以避免或最小化。
本发明一实施方式中的散热器可装设于各种装置中。例如,LED装置,由于其尺寸而产生实质上热量。而同时,这些LED装置经常设置于一小的封闭以及狭窄空间中。而将散热装置耦合装设至LED装置即可在仅略为增加厚度下,产生一足够的冷却。此外,本发明一例子中,散热器可耦合至CPU装置、激光二极管、线路板、以及其他线路装载材料及类似物。
在本发明另一实施方式中,提供一种多个单层金刚石颗粒的热调节半导体装置。例如,如图4所示,此装置可包括有一散热器,散热器具有一薄金属层42;一第一单层金刚石颗粒44设置于该薄金属层42的一侧;以及一第二单层金刚石颗粒46,设置于该金属层42的另一侧,并相对该第一单层金刚石颗粒44。金属基体材料48将该第一及第二单层金刚石颗粒44,46结合至该薄金属层42。此外,如图1中所讨论,半导体材料16热耦合至散热器,其中在该散热器与该半导体材料之间的热膨胀系数差异少于或等于约50%。该散热器可通过习知任何方法热耦合至半导体材料16。例如,在一例子中,散热器可通过焊接层18焊接至半导体材料16。
除了散热器装置,本发明的各种技术亦可用于制备具有非常接近平坦的金刚石尖端的工具。应知道,用于工具的详细技术亦可应用至散热装置,因此其技术可作为散热装置的技术支持。该工具的一例子为CMP垫修整器。因此,通过在低温下挤压键结于平坦表面,使金刚石颗粒可平坦及稳固于铜或其他金属材料中,如此可消除许多CMP垫修整器的制备过程中的热变形相关问题。例如,一例子中,金属层可于金属层的相对二侧设置单层金刚石颗粒。金刚石颗粒可使用黏着剂暂时耦合设置至该金属层,该黏着剂会接着在加热时挥发并消失。金属层则可增厚,而强化该工具。而此金属层的增厚,促使金刚石颗粒嵌埋于金属材料中。如此,金刚石颗粒可通过合金硬焊、热压、电镀、或相关技术结合至金属层。
金刚石颗粒可以一预定的图案排列,且更可具有一固定间距或方向性。在金属层的每一侧设置单一金刚石层可调节硬焊温度所造成的热收缩,其中该温度将金刚石分布固定于一侧所用。通过涂布一金刚石层至金属或支撑层的每一侧一,可使两侧的扭曲作用力(如,热量移动及压力,)可为相等或实质上相等。如此,可将金属或支撑层的扭曲降到最小。也就是说,弯曲所造成的作用力,实质上会平均地施加于金属层的每一侧,因而可互相相抵,如此可将扭曲的发生降至最小。在某些实施方式中,该金属层每一侧的单一(single)或单个(mono)金刚石层彼此间可具有相配的形态、图案、或方向性。如此,在金属层每一侧的金刚石颗粒实质上具有相配的空间配置。另一实施方式中,所述形态、图案、或方向可彼此间为不同,或是部分相配。在又一实施方式中,图案化设置于金属层一侧的金刚石颗粒,可依照金属层另一侧的金刚石颗粒图案而排列,使颗粒的位置互相对应。在某些实施方式中,金属层一侧的金刚石颗粒的空间配置与金属层另一侧的金刚石颗粒的空间位置之间可直接对应。在另一实施方式中,该金刚石颗粒的图案可彼此互相相配或实质上相配,或是在金属层的对侧面偏移,使颗粒的位置不会互相相配。
将支撑层的扭曲最小化的优点与所完成工具的金刚石颗粒尖端的平坦化有关。当使用加热及/压力制备超研磨工具时时,即使这些颗粒已在加热及/或加压前预先平坦化,该支撑层的扭曲会使得尖端高度的平坦度产生变化。通过金刚石颗粒的配置,可使支撑层两侧的扭曲作用力可平均或实质上平均地分布,而使这些支撑层内扭曲程度相关的作用力有效地互相抵消,如此亦可将金刚石颗粒与其他金刚石颗粒之间的相关高度移动最小化。应知道的是,本发明中,“高度”以及与高度相关的描述(如,高于、最高,等)是指在该支撑层垂直方向的距离。此外,“突出率”是指一颗粒由参考点突出的高度或距离。在许多情形中,突出距离可由该支撑层或支撑层的特定表面而测量。因此,该尖端突出率或该尖端突出高度则应为研磨颗粒尖端由参考点(例如,支撑层表面)所突出距离。相似地,在二个颗粒之间的相对突出高度差为这些颗粒由参考点(如,支撑层)所量测突出高度差异。应注意的是,由于此为相对测量,因此参考点位置并无关系,只要由共同的参考点即可测量。此外,在某些情况中,超研磨颗粒可以一倾斜角度、弯曲度、或其它非平行于支撑层的配置。这些情形中,该突出高度需对照倾斜角度、弯曲度、或其他样式配置进行校正,以使得颗粒之间的高度差可在不受倾斜角度、弯曲度、等的影响下测量得到。
本发明一实施方式中,上述描述的这些工具可具有非常小相对高度差异的金刚石颗粒尖端。例如,一实施方式中,工具内的多个金刚石颗粒中,突出最高的金刚石颗粒尖端的突出距离,相对于突出次高的金刚石颗粒尖端的少于或等于20微米。在另一实施方式中,工具内的多个金刚石颗粒中,突出最高的金刚石颗粒尖端的突出距离,相对于突出次高的金刚石颗粒尖端少于或等于10微米。在又一实施方式中,所述多个金刚石颗粒中,金刚石颗粒的突出尖端的最高10%,其突出距离在20微米以内。在另一实施方式中,这些多个金刚石颗粒中,金刚石颗粒的突出尖端的最高10%,其突出距离在10微米以内。
此外,刚性支撑层可耦合至装置,以帮助操作及使用。例如,某一实施方式中,刚性支撑层可耦合至金属层一侧的金刚石颗粒,以使金属层另一侧的金刚石颗粒平坦化,并可露出用于修整CMP垫。此刚性支撑层可以由任何适用于磨损或修整程序的材料制得。此材料可包括高分子材料、金属材料、陶瓷材料、及其类似物。在一实施方式中,刚性支持体可为高分子材料,并可利用加热、挤压、黏着剂等方式将金刚石颗粒嵌入其中。在一些实施方式中,刚性支持体可为非高分子材料,如金属层。在上述情况下,可通过黏着剂黏附、焊接、硬焊、电镀、及其类似方式将金刚石颗粒结合至刚性支持体。关于硬焊技术,在加热及冷却过程中,不会导致金属层扭曲。
在一实施方式中,金刚石颗粒可通过使用含有铬的镍基合金将金刚石颗粒硬焊至金属层。在另一实施方式中,该硬焊可包含:将金刚石晶体与一无法与焊料结合的平坦陶瓷材料挤压。各种焊料合金的例子包括:BNi2、BNi7、及相似物,但不限于此。此外,可使用各种金刚石颗粒尺寸,其可包括筛孔大小如10/20、30/40、80/90、90/100、100/120、120/140、140/170、170/200、200/230、230/270、270/325、及325/400。
以下是以各种方式制作本发明的散热器的实施例。这些实施例仅用于说明,而不是用于限缩本发明的范围。
实施例1
将涂布钛的金刚石颗粒以单层设置于一第一铜金属层。将第二铜金属层设置于该单层金刚石的顶部,并相对该第一铜金属层。将此铜三明治结构热压以形成一中间夹有单层金刚石颗粒的散热器。氢化DLC涂布于散热器的一侧作为绝缘层。通过溅镀涂布有Cr及Cu。该铜可经由电镀使其加厚(如,至35μm)。铜层可经微影蚀刻形成线路。将一侧具有蓝宝石且另一侧具有二个电极的LED晶圆耦合至该经蚀刻所形成的线路,而使该二电极分别连接至二个线路。
实施例2
将具有GaN于蓝宝石上的LED晶圆利用金进行金属化。并将实施例1的铜散热器焊接至该金属化GaN。将蓝宝石以激光照射使其分离,将GaN材料以氧化铟锡(ITO)涂布以作为透明电极,并涂布有一小面积的金作为阳极。该铜质散热器作为阴极。此垂直式堆叠LED是在装置的相对两侧具有相对电极,因此由于可降低足迹(foot print)和增加冷却性,因此可得到更有效的发光性。
实施例3
一薄金属层(如,100微米厚的铜)具有一黏着层(即,3M生产,25微米,易变化(即,易挥发而不会残留碳))于每一侧。将涂布钛的金刚石颗粒(如,约50微米)分散于两侧,以在每一侧制作出单层金刚石颗粒,并移除多余的金刚石。将层设置于覆盖了铜粉末薄层的石墨模具内。再加另一层铜粉末薄层在该层上。然后将此组件(assembly)在真空或惰性气体下热压(如,900C,20分钟),以形成两侧铜层的平坦碟盘。因钛涂层的存在,使铜与金刚石颗粒更稳固地结合。该碟盘的平坦度可通过平坦的模具表面而维持。然后将该碟盘两侧抛光,使其表面平整。而所形成的碟盘含有二个金刚石层在铜基体内,使其具有高热传导率及低CTE。
实施例4
如同实施例3,但薄金属铜层具有一硬焊合金层(即,Cu-Sn-Ti或Ag-Cu-Ti)耦合至每一侧。未涂布的金刚石颗粒以黏结剂设置于硬焊合金层的暴露侧。将该组件在真空炉加热融熔焊料,形成一铜层覆盖于在两侧的金刚石晶体。将金刚石附着层悬浮于连接至阴极的CuSO4电解质溶液。该阳极是一铜电极。在将电流通过电解质后,铜会被电镀在铜层以及金刚石颗粒间的间隙。此形成的结构为一铜散热器,并具有二个单层金刚石设置其中。
实施例5
如同实施例4,但以薄镍层取代铜层,且硬焊层为Ni-Cr-B-Si(BNi2,如Wall Colmonoy所生产的Nichrobraze LM),而金刚石颗粒(如,150微米)以网状图案排列(如,间隙为500微米)。该硬焊双层,代替颗粒之间的间隙填充,并对着具有一热塑性黏着剂(150℃,10分钟)在其间的平面基板(108mm直径,6.5mm厚度)挤压。如此可得到一具有平坦表面的CMP垫修整器的工具。在每一侧的单层,可调节由硬焊温度(如,1020℃,10分钟)的热收缩,其中,该硬焊温度会造成其中一侧的金刚石分布不对称。
实施例6
将无氧铜粉末(尺寸为1~4μm)在一模具中冷压,以形成一薄层。将经由120/140网目过筛的钛涂布金刚石颗粒分布于该单层铜上方。接着,设置一第二冷压薄铜层于上方。将此三明治结构在20Mpa和950℃下热压20分钟。将得到的三明治结构散热器的两侧抛光以得到10微米的平坦度(flatness)以及1微米的平滑度(smoothness)。
当然,应了解上述配置仅为图解本发明原理的应用。在不偏离本发明精神和范围情况下,所述领域的技术人员可设计许多修饰和替代配置,且所附本发明的范围包含此等修饰和配置。于是,尽管已使用当前认为是本发明最实际且较佳的实施例来特定且详细地在上面描述了本发明,但是显然对该领域的技术人员来说,在不偏离本文所阐明的原理和概念的情况下可进行许多修饰,所述修饰包括尺寸、材料、形状、形式、功能和操作方式、装配和用途的变化,但不限于这些。
Claims (19)
1.一种降低散热器与半导体装置之间的热致缺陷的方法,其特征在于,包括:
在一薄金属散热器中设置单层金刚石颗粒;以及
将该散热器热耦合至一半导体材料,其中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于50%。
2.如权利要求1所述的方法,其特征在于,该散热器与该半导体材料之间的热膨胀系数差异少于或等于5.0ppm/℃。
3.如权利要求1所述的方法,其特征在于,该散热器通过焊接热耦合至该半导体材料。
4.如权利要求1所述的方法,其特征在于,在该薄金属散热器中设置单层金刚石颗粒的步骤还包括:
涂布该单层金刚石颗粒于一第一金属层;
在该第一金属层上设置一第二金属层,使该单层金刚石颗粒夹置于其间;以及
利用充分的加热和压力,一起挤压该第一及第二金属层,以将该金刚石颗粒固定于该第一及第二金属层中。
5.如权利要求4所述的方法,其特征在于,该加热的温度为700℃至1000℃,且该压力为10MPa至50MPa。
6.如权利要求1所述的方法,其特征在于,在该薄金属散热器中设置该单层金刚石颗粒的步骤还包括:
设置该单层金刚石颗粒于一金属粉末中;以及
利用充分的加热以烧结该金属粉末,并施压以固定该金刚石颗粒于已烧结的金属中。
7.如权利要求1所述的方法,其特征在于,在该薄金属散热器中设置该单层金刚石颗粒的步骤还包括:
将该单层金刚石颗粒涂布于一金属基板上;
将该金属基板置于一含金属离子的离子溶液中;以及
通入电流至该离子溶液,使一金属层电镀形成于该金属基板上,以稳固该金刚石颗粒。
8.如权利要求1所述的方法,其特征在于,该散热器的厚度为50μm至300μm。
9.如权利要求1所述的方法,其特征在于,该散热器包括一成份选自由:铝、铜、金、银、铂、及其合金所组成的集合。
10.如权利要求1所述的方法,其特征在于,该半导体材料包括一成份选自由:硅、碳化硅、硅化锗(silicon germanium)、砷化镓(gallium arsenide)、氮化镓(gallium nitride)、锗(germanium)、硫化锌(zinc sulfide)、磷化镓(gallium phosphide)、锑化镓(gallium antimonide)、砷磷化镓铟(galliumindium arsenide phosphide)、磷化铝(aluminum phosphide)、砷化铝(aluminumarsenide)、砷化铝镓(aluminum gallium arsenide)、氮化镓(gallium nitride)、氮化硼(boron nitride)、氮化铝(aluminum nitride)、砷化铟(indium arsenide)、磷化铟(indium phosphide)、锑化铟(indium antimonide)、氮化铟(indiumnitride)、及其复合物所组成的集合。
11.如权利要求1所述的方法,其特征在于,该半导体材料包括一成份,该成分选自一个集合,该集合包括:氮化镓、氮化铝及其复合物。
12.一种降低热致缺陷的热调节半导体装置,其特征在于,包括:
一散热器,包括一单层金刚石颗粒于一薄金属基体内;以及
一半导体材料,热耦合至该散热器,其中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于50%。
13.如权利要求12所述的装置,其特征在于,该散热器与该半导体材料之间的热膨胀系数差异少于或等于5.0ppm/℃。
14.如权利要求12所述的装置,其特征在于,所有金刚石颗粒与该单层中的至少一其它金刚石颗粒直接接触。
15.如权利要求12所述的装置,其特征在于,该散热器包括多个区隔单层金刚石,其不与另一者直接接触。
16.一种降低热致缺陷的热调节半导体装置,其特征在于,包括:
一散热器,其包括:
一薄金属层;
一第一单层金刚石颗粒,设置于该薄金属层的一侧;
一第二单层金刚石颗粒,设置于相对该第一单层金刚石颗粒的薄金属层的一侧;
一金属基体,将该第一及第二单层金刚石颗粒结合至该薄金属层;以及
一半导体材料,热耦合至该散热器,其中,该散热器与该半导体材料之间的热膨胀系数差异少于或等于50%。
17.如权利要求16所述的装置,其特征在于,该金属基体的成份选自由焊料材料、烧结材料、电镀材料、以及其组合所组成的集合。
18.如权利要求16所述的装置,其特征在于,该散热器与该半导体材料之间的热膨胀系数差异少于或等于5.0ppm/℃。
19.如权利要求16所述的装置,其特征在于,所有在相同单层中的金刚石颗粒与该单层中的至少一其它金刚石颗粒直接接触。
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US38497610P | 2010-09-21 | 2010-09-21 | |
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CN2011800547018A Pending CN103299418A (zh) | 2010-09-21 | 2011-09-21 | 单层金刚石颗粒散热器及其相关方法 |
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Also Published As
Publication number | Publication date |
---|---|
US20140235018A1 (en) | 2014-08-21 |
TW201223704A (en) | 2012-06-16 |
CN103221180A (zh) | 2013-07-24 |
US20120244790A1 (en) | 2012-09-27 |
WO2012040374A2 (en) | 2012-03-29 |
WO2012040373A3 (en) | 2012-06-21 |
US8531026B2 (en) | 2013-09-10 |
TW201220445A (en) | 2012-05-16 |
US8777699B2 (en) | 2014-07-15 |
US20150072601A1 (en) | 2015-03-12 |
TWI451942B (zh) | 2014-09-11 |
WO2012040373A2 (en) | 2012-03-29 |
WO2012040374A3 (en) | 2012-07-05 |
TWI464839B (zh) | 2014-12-11 |
US20120241943A1 (en) | 2012-09-27 |
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