CN103276265B - Method for preparing free-standing diamond film-diamond particles-metallic composite material - Google Patents
Method for preparing free-standing diamond film-diamond particles-metallic composite material Download PDFInfo
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Abstract
The invention provides a method for preparing a free-standing diamond film-diamond particles-metallic composite material. The method comprises the steps as follows: firstly, a free-standing diamond film is subjected to laser cutting for forming, and surfaces of diamond particles and free-standing diamond film strips are plated with metal transition layers; then copper powder and the diamond particles are mixed uniformly, in a die which is in a shape of a required radiator, the free-standing diamond film strips are regularly embedded into a mixed material of the copper powder and the diamond particles, and then hot press molding and surface processing are performed; and the composite material is obtained. The method provided by the invention has the main advantages that heat conductivity in a direction of the free-standing diamond film strips is increased remarkably; and meanwhile, by virtue of the metal transition layers on the surfaces of the diamond particles and the free-standing diamond film strips, after sintering, wettability between the diamond particles, the free-standing diamond film strips and copper is improved, interface resistance between copper and the diamond particles and the free-standing diamond film strips is reduced, and the strength of the composite material is improved.
Description
Technical field
The invention belongs to dissipation from electronic devices body technical field of material.In particular, provide a kind of freestanding diamond film-diamond particles-metal composite and preparation method thereof.
Background technology
The heat diffusion capabilities of electron device has become the restraining factors of development of electronic devices, as large integrated circuit (IC) chip, high-power pulsed ion beams etc., the many electronic unit height having influence on communications satellite high power density device and aerospacecraft are especially integrated, and the miniaturization of electron device.Therefore, development of new height heat conduction, low-density novel material become problem in the urgent need to address.
Diamond is heat conductivility best material in nature all material, have 2000W/mk thermal conductivity, and copper is the material that in metal, heat conductivility is excellent, and domestic and international investigator has carried out extensive research and development to diamond-copper composite material.Lawrence Livermore National Laboratory and the Sun Microsystems company of the U.S. develop diamond-copper composite material as far back as nineteen ninety-five, and be referred to as Dymalloy, the heat conductivity of preparation reaches 420W/mk.Sumitomo Electric company of Japan adopts high-pressure sinter technology to prepare DMCH(Diamond Metal Composite Heatsink by name) be used as heat sink diamond-copper composite material, there is the thermal conductivity of 600 W/mk.Domestic, also carried out the research of matrix material for thermally conductive material of diamond and metal, as practical new patent, 200920089841.9 1 kinds of radiating elements adopting large-particle monocrystal diamond heat sink material to dispel the heat, are embedded in diamond particles on copper coin.The metal that other researchs comprise use has copper, aluminium, silver etc., and utilize the methods such as hot pressing, sintering, infiltration by diamond particles and metal forming, the highest thermal conductivity reaches 570 W/mk.Its common feature carries out modification to diamond particle surfaces, uses diamond particles and carcass material to carry out composite molding.Simultaneously because the size of diamond particles is less, what thermal conductivity improved further is extremely restricted.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of freestanding diamond film-diamond particles-metal composite of directed super-high heat-conductive, meet the high heat conduction of high-performance HIGH-POWERED MICROWAVES power device, the height radiator of integrated-optic device and electronic package material, properties of low density requirement.
The preparation method of the freestanding diamond film-diamond particles-metal composite of a kind of directed super-high heat-conductive of the present invention, first freestanding diamond film laser cutting is shaped, to diamond particles and freestanding diamond film bar surface metallization transition layer, thereafter copper powder and diamond particles are mixed, in the mould of required radiator shape, freestanding diamond film rule is buried in the batch mixing putting copper powder and diamond particles, then carry out hot-forming and surface working.Specifically comprise the following steps:
1) shaping of freestanding diamond film bar: cvd diamond self-supported membrane diameter 60 ~ 300mm, thickness 0.2 ~ 3mm being prepared by dc arc plasma CVD, microwave plasma CVD or hot filament CVD techniques, then form by laser cutting, its length, width and shape can be determined according to the shape of radiator, can be arc, " I " shape, " L " shape, "T"-shaped or " work " shape, as shown in Figure 1.The thermal conductivity of described freestanding diamond film bar is at 1200-2000W/(mK);
2) diamond particles and the surface treatment of freestanding diamond film bar: the combination of any one or they in the material of application magnetron sputtering, arc ion plating or the filtered arc method plating titanium in diamond particles and freestanding diamond film bar surface, tungsten, molybdenum, niobium, tantalum or chromium composition, the thickness of coating layer is 0.1-2 μm;
3) batch mixing: with copper powder and diamond particles for raw material carries out being mixed to form carcass material, the size range 30-150 μm of selected copper powder, the particle size range 1-150 μm of diamond particles, the content of diamond particles in carcass is 5-65% by mass, copper powder and diamond particles are loaded in urethane abrasive can, mix in three-dimensional material mixer, mixing time is 0.5-4 hour;
4) freestanding diamond film bar is placed: first load in the hot pressing graphite jig of required radiator shape by the mixing carcass material of part copper powder and diamond particles, the height of mixing carcass material is 1/3 of mold height, then freestanding diamond film rule is inserted and place, then fill up with the mixing carcass material of copper powder and diamond particles;
5) hot pressed sintering: hot pressing graphite jig rule being placed with the mixing carcass material of freestanding diamond film bar and copper powder and diamond particles is placed in vacuum sintering funace, sintering temperature 500-950 DEG C, pressing pressure 5-35MPa, sintering time 0.5-3 hour;
6) materials processing: employing Linear cut is polished again or directly hot-pressed and sintered product is processed into desired shape and size by polishing process.
Freestanding diamond film-diamond particles-the metal composite obtained by preparation method provided by the invention is be the compound that metallic matrix and diamond particles are formed by copper is carcass, the freestanding diamond film bar being distributed in the different shape in carcass is enhanced thermal conduction body, and the intermediate metal improving copper and diamond particles and freestanding diamond film bar interface bonding state is formed, the size range 30-150 μm of selected copper powder, the particle size range 1-150 μm of diamond particles, the content of diamond particles in carcass is 5-65% by mass, described freestanding diamond film bar thickness is 0.2-3mm, thermal conductivity is at 1200-2000W/(mK), described intermediate metal is plating in the titanium on diamond particles and freestanding diamond film bar surface, tungsten, molybdenum, niobium, the combination of any one or they in the material of tantalum or chromium composition.
Copper substrate in the present invention is the supporter of described matrix material, is the basic material that in various radiator material, Application Areas is conventional, has high thermal conductivity 398W/(mK).
The diamond particles added in the present invention plays and improves heat conductivity, reduces thermal expansivity, improves the effect of intensity, and its consumption in carcass is 5-65% in mass, and selected particle size range is 1-150 μm.The thermal conductivity of single-crystal diamond can reach 2000W/(mK), thermal expansivity is at room temperature 1.0 × 10
-6/ DEG C.
The freestanding diamond film bar added in the present invention is the main body improving matrix material directional heat conductance, freestanding diamond film bar uses dc arc plasma CVD, microwave plasma CVD or hot filament CVD techniques to prepare the cvd diamond self-supported membrane of diameter 60 ~ 300mm, thickness 0.2 ~ 3mm, then form by laser cutting, its length and shape can be determined according to the shape of radiator, can be arc, " I " shape, " L " shape, "T"-shaped and " work " shape rectangular, as shown in Figure 1.The thermal conductivity scope of described freestanding diamond film bar is at 1200-2000W/(mK).
Intermediate metal described in the present invention is the combination of any one or they in the material of application magnetron sputtering, arc ions degree or the filtered arc method plating titanium in diamond particles and freestanding diamond film bar surface, tungsten, molybdenum, niobium, tantalum or chromium composition, plays the effect improving copper and diamond particles and freestanding diamond film bar interface resistance, improve composite material strength in the present invention.In matrix material preparation process, these elements can react with the interface of diamond particles and freestanding diamond film bar, form corresponding carbide, improve the density of matrix material, reduce voidage, improve the effect of interface bond strength.
The method of diamond particles and freestanding diamond film surface metal transition layer plating can be magnetron sputtering, arc ions degree, filtered arc method or their arbitrary combination, the thickness of coating layer is 0.1-2 μm, and blocked up intermediate metal will increase the thermal resistance at interface.
Major advantage of the present invention is that the freestanding diamond film bar of high heat conduction effectively can improve the thermal conductivity of diamond-copper based composites, particularly increase significantly in the direction thermal conductivity of freestanding diamond film bar, the intermediate metal on diamond particles and freestanding diamond film bar surface simultaneously, by improving the wetting property of diamond particles and freestanding diamond film bar and copper after sintering, reduce copper and the interface resistance between diamond particles and freestanding diamond film bar, improve the intensity of matrix material.
Accompanying drawing explanation
Fig. 1 is the schematic shapes of freestanding diamond film bar.
Embodiment:
Below by embodiment, the present invention is described in detail,
The freestanding diamond film bar added in the present invention is the main body improving matrix material directional heat conductance, freestanding diamond film bar uses dc arc plasma CVD, microwave plasma CVD or hot filament CVD techniques to prepare the cvd diamond self-supported membrane of diameter 60 ~ 300mm, thickness 0.2 ~ 3mm, then form by laser cutting, its length and shape can be determined according to the shape of radiator, can be arc, " I " shape, " L " shape, "T"-shaped and " work " shape rectangular, as shown in Figure 1.The thermal conductivity scope of described freestanding diamond film bar is at 1200-2000W/(mK).
Embodiment 1
(1) the cvd diamond self-supported membrane of diameter 100mm, thickness 0.8mm is prepared by dc arc plasma CVD, with " I " shape bar being laser-cut into length 3 mm, width 1 mm, freestanding diamond film bar in the thermal conductivity of length and width at 1940W/(mK), in the thermal conductivity of thickness direction at 1764W/(mK);
(2) by granularity 50 μm of diamond particles and freestanding diamond film bar using electric arc ion plating plating, the titanium thickness in diamond particles and freestanding diamond film bar surface is 1.2 μm;
(3) with diamond particles after copper powder and plating for raw material carries out being mixed to form carcass material, the particle diameter of selected copper powder is 80 μm, the content of diamond particles in carcass is 55% by mass, copper powder and diamond particles are loaded in urethane abrasive can, mix in three-dimensional material mixer, mixing time is 3 hours;
(4) first the mixing carcass material of diamond particles after part copper powder and plating is loaded in hot pressing graphite jig, the height of mixing carcass material is 1/3 of mold height, then the rule insertion along its length of freestanding diamond film bar after plating is placed, area occupied is 18% of die area, then fills up with the mixing carcass material of diamond particles after copper powder and plating;
(5) after rule being placed with plating, after freestanding diamond film bar and copper powder and plating, the hot pressing graphite jig of the mixing carcass material of diamond particles is placed in vacuum sintering funace, sintering temperature 850 DEG C, pressing pressure 30MPa, sintering time 2 hours;
(6) adopt direct polishing process by formed sample surfaces and side polishing, the thickness direction of sample is the length direction of diamond strips, records the average conduction in thickness of sample direction more than 900W/(mK).
Embodiment 2
(1) the cvd diamond self-supported membrane of diameter 60mm, thickness 1mm is prepared by dc arc plasma CVD, with " I " shape bar being laser-cut into length 3 mm, width 1 mm, freestanding diamond film bar in the thermal conductivity of length and width at 1900W/(mK), in the thermal conductivity of thickness direction at 1720W/(mK);
(2) by granularity 80 μm of diamond particles and freestanding diamond film bar using electric arc ion plating plating, the titanium thickness in diamond particles and freestanding diamond film bar surface is 1.5 μm;
(3) diamond particles after the particle diameter 40 μm of copper powder and plating is selected to be that raw material carries out being mixed to form carcass material, the content of diamond particles in carcass is 50% by mass, copper powder and diamond particles are loaded in urethane abrasive can, mix in three-dimensional material mixer, mixing time is 2.5 hours;
(4) first part mixing carcass material is loaded in hot pressing graphite jig, the height of mixing carcass material is 1/3 of mold height, then the rule insertion along its length of freestanding diamond film bar after plating is placed, area occupied is 15% of die area, then fills up with the mixing carcass material of diamond particles after copper powder and plating;
(5) after rule being placed with plating, after freestanding diamond film bar and copper powder and plating, the hot pressing graphite jig of the mixing carcass material of diamond particles is placed in vacuum sintering funace, sintering temperature 800 DEG C, pressing pressure 25MPa, sintering time 2.5 hours;
(6) adopt direct polishing process by formed sample surfaces and side polishing, the thickness direction of sample is the length direction of diamond strips, cuts into test sample size, records the average conduction in thickness of sample direction more than 850W/(mK).
Embodiment 3
(1) the cvd diamond self-supported membrane of diameter 60mm, thickness 0.6mm is prepared by dc arc plasma CVD, with " I " shape bar being laser-cut into length 3 mm, width 1 mm, freestanding diamond film bar in the thermal conductivity of length and width at 2060W/(mK), in the thermal conductivity of thickness direction at 1840W/(mK);
(2) by granularity 60 μm of diamond particles and freestanding diamond film bar using electric arc ion plating plating, the titanium thickness in diamond particles and freestanding diamond film bar surface is 1.0 μm;
(3) diamond particles after the particle diameter 40 μm of copper powder and plating is selected to be that raw material carries out being mixed to form carcass material, the content of diamond particles in carcass is 45% by mass, copper powder and diamond particles are loaded in urethane abrasive can, mix in three-dimensional material mixer, mixing time is 2.0 hours;
(4) first part mixing carcass material is loaded in hot pressing graphite jig, the height of mixing carcass material is 1/3 of mold height, then the rule insertion along its length of freestanding diamond film bar after plating is placed, area occupied is 16% of die area, then fills up with the mixing carcass material of diamond particles after copper powder and plating;
(5) after rule being placed with plating, after freestanding diamond film bar and copper powder and plating, the hot pressing graphite jig of the mixing carcass material of diamond particles is placed in vacuum sintering funace, sintering temperature 750 DEG C, pressing pressure 27MPa, sintering time 2 hours;
(6) adopt direct polishing process by formed sample surfaces and side polishing, the thickness direction of sample is the length direction of diamond strips, cuts into test sample size, records the average conduction in thickness of sample direction more than 800W/(mK).
Above embodiment just meets several examples of the technology of the present invention content, does not illustrate that the present invention is only limitted to the content described in following example, and the technician in the industry all belongs to content of the present invention according to the product of the claims in the present invention item manufacture.
Claims (4)
1. the preparation method of freestanding diamond film-diamond particles-metal composite, it is characterized in that: first freestanding diamond film laser cutting is shaped by the preparation method of described freestanding diamond film-diamond particles-metal composite, to diamond particles and freestanding diamond film bar surface metallization transition layer, thereafter copper powder and diamond particles are mixed, in the mould of required radiator shape, freestanding diamond film rule is buried in the batch mixing putting copper powder and diamond particles, then carry out hot-forming and surface working; Specifically comprise the following steps:
(1) shaping of freestanding diamond film bar: by prepare with dc arc plasma CVD, microwave plasma CVD or hot filament CVD techniques diameter 60 ~ 300mm, thickness 0.2 ~ 3mm cvd diamond self-supported membrane, then form by laser cutting, its length, width and shape can be determined according to the shape of radiator, and the thermal conductivity of described freestanding diamond film bar is at 1200-2000W/(mK);
(2) diamond particles and the surface treatment of freestanding diamond film bar: the combination of any one or they in the material of application magnetron sputtering, arc ion plating or the filtered arc method plating titanium in diamond particles and freestanding diamond film bar surface, tungsten, molybdenum, niobium, tantalum or chromium composition, the thickness of coating layer is 0.1-2 μm;
(3) batch mixing: with copper powder and diamond particles for raw material carries out being mixed to form carcass material, the size range 30-150 μm of selected copper powder, the particle size range 1-150 μm of diamond particles, the content of diamond particles in carcass is 5-65% by mass, copper powder and diamond particles are loaded in urethane abrasive can, mix in three-dimensional material mixer, mixing time is 0.5-4 hour;
(4) freestanding diamond film bar is placed: in the hot pressing graphite jig of the radiator shape needed for first being loaded by the mixing carcass material of part copper powder and diamond particles, the height of mixing carcass material is 1/3 of mold height, then freestanding diamond film rule is inserted and place, then fill up with the mixing carcass material of copper powder and diamond particles;
(5) hot pressed sintering: hot pressing graphite jig rule being placed with the mixing carcass material of freestanding diamond film bar and copper powder and diamond particles is placed in vacuum sintering funace, sintering temperature 500-950 DEG C, pressing pressure 5-35MPa, sintering time 0.5-3 hour;
(6) materials processing: employing Linear cut is polished again or directly hot-pressed and sintered product is processed into desired shape and size by polishing process.
2. the preparation method of freestanding diamond film-diamond particles-metal composite according to claim 1, is characterized in that: described freestanding diamond film bar is arc, " I " shape, " L " shape, "T"-shaped or " work " shape.
3. the preparation method of freestanding diamond film-diamond particles-metal composite according to claim 1, it is characterized in that: described in the freestanding diamond film bar prepared be the main body improving matrix material directional heat conductance, freestanding diamond film bar uses dc arc plasma CVD, microwave plasma CVD or hot filament CVD techniques prepare diameter 60 ~ 300mm, the cvd diamond self-supported membrane of thickness 0.2 ~ 3mm, then form by laser cutting, its length and shape can be determined according to the shape of radiator, it is arc, " I " shape, " L " shape, "T"-shaped and " work " shape rectangular.
4. the preparation method of freestanding diamond film-diamond particles-metal composite according to claim 3, it is characterized in that: described matrix material is be the compound that metallic matrix and diamond particles are formed by copper is carcass, the freestanding diamond film bar being distributed in the different shape in carcass is enhanced thermal conduction body, and the intermediate metal improving copper and diamond particles and freestanding diamond film bar interface bonding state is formed, the size range 30-150 μm of selected copper powder, the particle size range 1-150 μm of diamond particles, the content of diamond particles in carcass is 5-65% by mass, described freestanding diamond film bar thickness is 0.2-3mm, thermal conductivity is at 1200-2000W/(mK), described intermediate metal is plating in the titanium on diamond particles and freestanding diamond film bar surface, tungsten, molybdenum, niobium, the combination of any one or they in the material of tantalum or chromium composition.
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| US10494713B2 (en) * | 2015-04-16 | 2019-12-03 | Ii-Vi Incorporated | Method of forming an optically-finished thin diamond film, diamond substrate, or diamond window of high aspect ratio |
| CN105220049B (en) * | 2015-10-12 | 2017-03-08 | 中南大学 | A kind of lamellar diamond reinforced metal-base composite material and preparation method |
| CN105695831B (en) * | 2016-03-21 | 2017-10-31 | 中南大学 | A kind of continuous diamond framework enhancing composite of super-high heat-conductive and preparation method |
| CN107419133A (en) * | 2017-05-12 | 2017-12-01 | 南通鑫祥锌业有限公司 | High-volume fractional diamond zinc composite |
| CN109128192A (en) * | 2017-06-28 | 2019-01-04 | 深圳先进技术研究院 | Composite polycrystal-diamond and preparation method thereof |
| CN107649688B (en) * | 2017-08-21 | 2019-07-09 | 武汉速博酷新材料科技有限公司 | A kind of the diamond heat-conducting composite material and preparation method and application of easy processing |
| CN110193600B (en) * | 2019-05-09 | 2021-10-08 | 西安交通大学 | Preparation method of titanium carbide reinforced titanium-coated graphite powder |
| CN110394521B (en) * | 2019-08-02 | 2021-03-23 | 太原理工大学 | Diamond film high-efficiency heat dissipation material and preparation method thereof |
| CN114540765A (en) * | 2020-11-25 | 2022-05-27 | 有研工程技术研究院有限公司 | Diamond/copper composite material heat sink coated with metal titanium-copper layer and preparation method thereof |
| CN113146158B (en) * | 2021-01-27 | 2021-12-24 | 北京科技大学 | Preparation method of open type full-diamond heat dissipation structure |
| CN113458395A (en) * | 2021-07-05 | 2021-10-01 | 荣成高时新材料技术有限公司 | Preparation process of diamond tool formed by microwave heating |
| CN117020209B (en) * | 2023-10-09 | 2024-01-26 | 赣州金顺科技有限公司 | Heat dissipation substrate and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5183529A (en) * | 1990-10-29 | 1993-02-02 | Ford Motor Company | Fabrication of polycrystalline free-standing diamond films |
| EP0751237A1 (en) * | 1995-06-07 | 1997-01-02 | Saint-Gobain/Norton Industrial Ceramics Corporation | Segmented substrate for arc-jet diamond deposition |
| CN102700191A (en) * | 2012-06-14 | 2012-10-03 | 北京科技大学 | Method for manufacturing polycrystalline diamond compact enhanced by chemical vapor deposition (CVD) diamond |
-
2013
- 2013-06-09 CN CN201310231261.XA patent/CN103276265B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5183529A (en) * | 1990-10-29 | 1993-02-02 | Ford Motor Company | Fabrication of polycrystalline free-standing diamond films |
| EP0751237A1 (en) * | 1995-06-07 | 1997-01-02 | Saint-Gobain/Norton Industrial Ceramics Corporation | Segmented substrate for arc-jet diamond deposition |
| CN102700191A (en) * | 2012-06-14 | 2012-10-03 | 北京科技大学 | Method for manufacturing polycrystalline diamond compact enhanced by chemical vapor deposition (CVD) diamond |
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Application publication date: 20130904 Assignee: Shaoxing Hongye source Investment Limited Assignor: University of Science and Technology Beijing Contract record no.: 2015990000900 Denomination of invention: Method for preparing free-standing diamond film-diamond particles-metallic composite material Granted publication date: 20150401 License type: Exclusive License Record date: 20151030 |
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